MY167530A - Fet type ph sensor utilising undoped aigan/gan hemt structure - Google Patents

Fet type ph sensor utilising undoped aigan/gan hemt structure

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Publication number
MY167530A
MY167530A MYPI20091645A MYPI20091645A MY167530A MY 167530 A MY167530 A MY 167530A MY PI20091645 A MYPI20091645 A MY PI20091645A MY PI20091645 A MYPI20091645 A MY PI20091645A MY 167530 A MY167530 A MY 167530A
Authority
MY
Malaysia
Prior art keywords
aigan
undoped
fet type
hemt structure
gan hemt
Prior art date
Application number
MYPI20091645A
Inventor
Manaf Bin Hashim Abdul
Original Assignee
Univ Malaysia Teknologi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Malaysia Teknologi filed Critical Univ Malaysia Teknologi
Priority to MYPI20091645A priority Critical patent/MY167530A/en
Publication of MY167530A publication Critical patent/MY167530A/en

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

THE PRESENT INVENTION PROVIDE A PH SENSOR DEVICE (200) COMPRISING A SUBSTRATE (202), A BUFFER LAYER (204) FORMED ON THE SUBSTRATE (202), AN UNDOPED GAN LAYER (206) FORMED ON THE BUFFER LAYER (204); AND AN UNDOPED AIGAN LAYER (208) FORMED ON THE UNDOPED GAN LAYER (206). THE SENSOR DEVICE (200) IS FORMED BASED ON A FET TYPE STRUCTURE FABRICATED WITH UNDOPED GAN/AIGAN HEMT STRUCTURE. THE SENSOR (200) FURTHER INCLUDES A TWO DIMENSIONAL ELECTRON GAS (2DEG) PROVIDED OR FONMED PREFERABLY NEAR THE SURFACE SO AS TO ALLOW HIGHLY SENSITIVE DETECTION OF SAMPLE. MOST ILLUSTRATIVE DRAWINGS:
MYPI20091645A 2009-04-23 2009-04-23 Fet type ph sensor utilising undoped aigan/gan hemt structure MY167530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MYPI20091645A MY167530A (en) 2009-04-23 2009-04-23 Fet type ph sensor utilising undoped aigan/gan hemt structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI20091645A MY167530A (en) 2009-04-23 2009-04-23 Fet type ph sensor utilising undoped aigan/gan hemt structure

Publications (1)

Publication Number Publication Date
MY167530A true MY167530A (en) 2018-09-05

Family

ID=64308895

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20091645A MY167530A (en) 2009-04-23 2009-04-23 Fet type ph sensor utilising undoped aigan/gan hemt structure

Country Status (1)

Country Link
MY (1) MY167530A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459471A (en) * 2019-07-25 2019-11-15 中山大学 A kind of preparation method of double-gate structure GaN base pH sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459471A (en) * 2019-07-25 2019-11-15 中山大学 A kind of preparation method of double-gate structure GaN base pH sensor
CN110459471B (en) * 2019-07-25 2020-09-04 中山大学 Preparation method of GaN-based pH sensor with double-gate structure

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MY167530A (en) Fet type ph sensor utilising undoped aigan/gan hemt structure