MY167530A - Fet type ph sensor utilising undoped aigan/gan hemt structure - Google Patents
Fet type ph sensor utilising undoped aigan/gan hemt structureInfo
- Publication number
- MY167530A MY167530A MYPI20091645A MYPI20091645A MY167530A MY 167530 A MY167530 A MY 167530A MY PI20091645 A MYPI20091645 A MY PI20091645A MY PI20091645 A MYPI20091645 A MY PI20091645A MY 167530 A MY167530 A MY 167530A
- Authority
- MY
- Malaysia
- Prior art keywords
- aigan
- undoped
- fet type
- hemt structure
- gan hemt
- Prior art date
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
THE PRESENT INVENTION PROVIDE A PH SENSOR DEVICE (200) COMPRISING A SUBSTRATE (202), A BUFFER LAYER (204) FORMED ON THE SUBSTRATE (202), AN UNDOPED GAN LAYER (206) FORMED ON THE BUFFER LAYER (204); AND AN UNDOPED AIGAN LAYER (208) FORMED ON THE UNDOPED GAN LAYER (206). THE SENSOR DEVICE (200) IS FORMED BASED ON A FET TYPE STRUCTURE FABRICATED WITH UNDOPED GAN/AIGAN HEMT STRUCTURE. THE SENSOR (200) FURTHER INCLUDES A TWO DIMENSIONAL ELECTRON GAS (2DEG) PROVIDED OR FONMED PREFERABLY NEAR THE SURFACE SO AS TO ALLOW HIGHLY SENSITIVE DETECTION OF SAMPLE. MOST ILLUSTRATIVE DRAWINGS:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20091645A MY167530A (en) | 2009-04-23 | 2009-04-23 | Fet type ph sensor utilising undoped aigan/gan hemt structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20091645A MY167530A (en) | 2009-04-23 | 2009-04-23 | Fet type ph sensor utilising undoped aigan/gan hemt structure |
Publications (1)
Publication Number | Publication Date |
---|---|
MY167530A true MY167530A (en) | 2018-09-05 |
Family
ID=64308895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20091645A MY167530A (en) | 2009-04-23 | 2009-04-23 | Fet type ph sensor utilising undoped aigan/gan hemt structure |
Country Status (1)
Country | Link |
---|---|
MY (1) | MY167530A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110459471A (en) * | 2019-07-25 | 2019-11-15 | 中山大学 | A kind of preparation method of double-gate structure GaN base pH sensor |
-
2009
- 2009-04-23 MY MYPI20091645A patent/MY167530A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110459471A (en) * | 2019-07-25 | 2019-11-15 | 中山大学 | A kind of preparation method of double-gate structure GaN base pH sensor |
CN110459471B (en) * | 2019-07-25 | 2020-09-04 | 中山大学 | Preparation method of GaN-based pH sensor with double-gate structure |
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