CN110444615A - 一种AlGaN基垂直结MSM紫外探测器及其制备方法 - Google Patents
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 8
- 230000004043 responsiveness Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000019504 cigarettes Nutrition 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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Abstract
本发明公开了一种AlGaN基垂直结MSM紫外探测器及其制备方法,包括衬底,衬底一侧由内至外依次设有AlXGa1‑XN紫外光吸收层、电极,所述电极为正常叉指电极的一半,沉积在AlXGa1‑XN紫外光吸收层的表面,衬底另一侧设有区域电极,所述区域电极和叉指电极的材质相同,区域电极为层状,且区域电极、衬底、AlXGa1‑XN紫外光吸收层的横截面积相等。本发明通过将单个叉指电极沉积在紫外光吸收层上面,减少了金属电极对部分入射光的阻挡和吸收,在衬底下面制备区域电极,使得产生的光生载留子在垂直方向迁移收集,而不是在侧方向迁移收集,减少了光生载流子迁移时间,从而提高探测器的响应度,降低响应时间,增大探测器响应度,提高了使用性能。
Description
技术领域
本发明属于半导体技术领域,具体涉及一种AlGaN基垂直结MSM紫外探测器及其制备方法。
背景技术
紫外光在电磁波谱中的位置被定义为波长在100~400nm的区域,而太阳光中大约有10%的紫外光,在大气层中,波长范围小于280nm的紫外光会被吸收,因此,紫外光波长在240~280nm的区域通常被称为“日盲”区域。
由于紫外线的日盲特性和大气层中良好的传播特性,其具有低窃听率,高抗干扰性和全天候工作等优点,所以紫外探测就显得格外重要。利用紫外探测器可以进行紫外预警,利用日盲区探测导弹的火焰与羽烟,在背景洁净的日盲区,导弹羽烟的紫外辐射很容易被检测出来。同时,紫外探测器在通信、预警、制导、臭氧监测、大气污染监控、空间通信、血液分析、水银灯消毒监控等领域也有广泛应用。
目前,较为常见的紫外探测器有金属-半导体-金属(MSM)结构、光电导型结构、肖特基结构、PIN型结构。光电导型光电流与暗电流都相对较大,但响应时间慢;肖特基型探测器暗电流小,灵敏度高,但需要外加电场才能使用;PIN型探测器,响应度和灵敏度高,但器件制造工艺复杂。平面MSM型探测器制作简单,但一般都为正入射,金属电极会阻挡和吸收一部分光。另外,虽然平面结构MSM探测器的响应速度较快,光生载流子在电场的作用下横向迁移,迁移距离为10μm以上。如果能进一步降低光生载流子的迁移距离,将进一步提高其响应速度。但是基于传统平面MSM结构探测器,如欲减小其叉指电极距离,需要用到复杂、昂贵且耗时的电子束曝光等工具。与传统平面MSM探测器载流子的横向迁移不同,本项目提供一种具有垂直结的AlGaN基垂直结MSM紫外探测器,光生载流子将在数百nm距离的纵向迁移而被收集,具有极高的响应速度。
发明内容
本发明的目的在于提供一种高响应速度的AlGaN基垂直结MSM紫外探测器及其制备方法。
本发明提供以下技术方案:一种AlGaN基垂直结MSM紫外探测器,包括衬底1,衬底1一侧由内至外依次设有AlXGa1-XN紫外光吸收层2、电极301,所述电极301为正常叉指电极的一半,电极301沉积在AlXGa1-XN紫外光吸收层2的表面,所述衬底1的另一侧设有区域电极302,区域电极302和电极301的材质相同,区域电极302为层状,且区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等。
优选的,所述衬底1采用Pt、Cu、Al、Ag、Ti、Au等中的一种或多种材料复合而成。
优选的,所述AlXGa1-XN紫外光吸收层2的厚度为0.1~3μm。
优选的,所述电极301采用Ni、Au、Pt、Cu、Al、Ag、Cr、In中的一种或多种材料复合而成,实现光生载流子的收集。
优选的,所述区域电极302采用Ni、Au、Pt、Cu、Al、Ag、Cr、In中的一种或多种材料复合而成,区域电极302与衬底1直接接触。
本发明还提供所述AlGaN基垂直结MSM紫外探测器的制备方法,包括以下步骤:
(1)在非金属衬底上外延生长AlXGa1-XN紫外光吸收层2;
(2)在AlXGa1-XN紫外光吸收层2上制作衬底1;
(3)将非金属衬底同结构分离;
(4)在AlXGa1-XN紫外光吸收层2上进行光刻,制备电极301;
(5)在衬底1表面制作区域电极302,区域电极302与衬底1直接接触,控制区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等,得到所述AlGaN基垂直结MSM紫外探测器。
进一步,步骤(1)中,所述非金属衬底采用蓝宝石、二氧化硅、氮化铝中的任意一种。
本发明制备方法中,衬底1采用金属材质,在衬底1上是无法外延生长出AlXGa1-XN紫外光吸收层,因此先在非金属衬底上外延生长紫外光吸收层,并在紫外光吸收层上制作衬底1,然后将非金属衬底同结构分离。
进一步,步骤(1)中,所述外延生长采用金属有机气相外延(MOCVD)、分子束外延(MBE)、物理气相外延(PVD)和离子束外延(IBE)中的任意一种。
进一步,步骤(3)中,采用干法刻蚀或者湿法蚀刻方法,将非金属衬底同结构分离。
进一步,步骤(5)中,利用磁控溅射在衬底1下表面制作区域电极302。
本发明所述的氮化物垂直结构MSM紫外探测器,将电极301沉积在AlXGa1-XN紫外光吸收层2的上表面,区域电极302沉积在衬底1的下表面,当紫外光正入射时,光入射面的叉指金属电极透过率较高,与普通的紫外探测器相比,被叉指电极挡住的光减少一半,光透过率可以增大一倍,产生的光生载留子在垂直方向迁移收集,而不是在侧方向迁移收集,衬底1、紫外光吸收层2、电极301和区域电极302形成紫外探测器。
传统的MSM型探测器虽然制作简单,暗电流小,当光正入射到叉指电极上时,金属电极会阻挡和吸收一部分光。本发明提供一种氮化物垂直结构MSM紫外探测器,在光入射面上只有一个叉指电极,可以减少正入射金属电极对入射光的遮挡和吸收,使得产生的光生载留子在垂直方向迁移收集,而不是在侧方向迁移收集,可以增大探测器响应度和响应速度。
与现有技术相比,本发明的有益技术效果为:
本发明所述的一种AlGaN基垂直结MSM紫外探测器及其制备方法,通过将单个电极沉积在紫外光吸收层上面,减少了金属电极对部分入射光的阻挡和吸收,在衬底下面制备区域电极,使得产生的光生载留子在垂直方向迁移收集,而不是在侧方向迁移收集,减少了光生载流子迁移时间,从而提高探测器的响应度,降低响应时间,增大探测器响应度。
本发明通过叉指电极的垂直结的设计,减少电极对紫外光的吸收,从而提高紫外探测器的响应度。
本发明所述的一种AlGaN基垂直结MSM紫外探测器及其制备方法,器件制备工艺简单,封装密度高,成本低,易于实施,可以大规模推广。
附图说明
图1为本发明氮化物垂直结构MSM紫外探测器的结构示意图。
图2为图1的俯视图(A向视图)和仰视图(B向视图)。
图3为本发明的AlGaN基垂直结MSM紫外探测器的制备流程图。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部实施例,基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
下面结合附图和实施例对本发明方案作进一步的阐述。
本发明提供一种AlGaN基垂直结MSM紫外探测器,包括衬底1,衬底1一侧由内至外依次设有AlXGa1-XN紫外光吸收层2、电极301,所述电极301为正常叉指电极的一半,沉积在AlXGa1-XN紫外光吸收层的表面,衬底另一侧设有区域电极302,所述区域电极302和电极301的材质相同,区域电极302为层状,且区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等。
本发明还提供所述一种AlGaN基垂直结MSM紫外探测器及其制备方法,包括以下步骤:
(1)在非金属衬底上外延生长AlXGa1-XN紫外光吸收层;
(2)在AlXGa1-XN紫外光吸收层上制作衬底1;
(3)将非金属衬底同结构分离;
(4)在AlXGa1-XN紫外光吸收层上进行光刻,制备电极301;
(5)在衬底1下表面制作区域电极302,区域电极302与衬底1直接接触,控制区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等,得到所述AlGaN基垂直结MSM紫外探测器。
实施例1
本发明提供一种氮化物垂直结构MSM紫外探测器的制备方法,如图3所示,包括以下步骤:
(1)非金属衬底选择直径为2英寸的平面(0001)面蓝宝石,厚度约为400μm,采用MOCVD方法在蓝宝石上生长Al0.32Ga0.68N紫外吸收层,厚度约为400nm,其中Al组分为0.32,Al组分为0.32的AlGaN的禁带宽度对应要探测的紫外光的波长,TMAl和TMGa分别作为Al源和Ga源,硅烷SiH4作为Si源,实现了对Al0.32Ga0.68N紫外光吸收层的掺杂,Al0.32Ga0.68N的禁带宽度对应为要探测的紫外光的波长,约为280nm;
(2)在Al0.32Ga0.68N紫外光吸收层上电镀制作衬底1,衬底1采用Cu制成,厚度约为120μm;
(3)用248nm KrF激光剥离方法,将非金属衬底同结构分离;
(4)在Al0.32Ga0.68N紫外光吸收层上进行光刻,制备电极301,电极301为正常叉指电极的一半,电极宽度和间距分为10μm和10μm,电极301采用Ni/Au材料制成;
(5)利用磁控溅射在衬底1下表面制作区域电极302,区域电极302与衬底1直接接触,区域电极302和电极301的材质相同,区域电极302为层状,控制区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等,如图1、2所示,得到所述AlGaN基垂直结MSM紫外探测器。
实施例2
本发明提供一种AlGaN基垂直结MSM紫外探测器的制备方法,包括以下步骤:
(1)非金属衬底选择直径为2英寸的硅,厚度约为400μm,采用MOCVD方法在硅上生长Al0.32Ga0.68N紫外吸收层,厚度约为400nm,其中Al组分为0.32,Al组分为0.32的AlGaN的禁带宽度对应要探测的紫外光的波长,TMAl和TMGa分别作为Al源和Ga源,硅烷SiH4作为Si源,实现了对Al0.32Ga0.68N紫外光吸收层的掺杂,Al0.32Ga0.68N的禁带宽度对应为要探测的紫外光的波长,约为280nm;
(2)在Al0.32Ga0.68N紫外光吸收层上电镀制作衬底1,衬底1采用Cu制成,其厚度约为120μm;
(3)用湿法蚀刻方法,将非金属衬底蚀刻去掉,同结构分离;
(4)在Al0.32Ga0.68N紫外光吸收层上进行光刻,制备电极301,电极301为正常叉指电极的一半,电极301采用Ni/Au材料制成;
(5)利用磁控溅射在衬底1下表面制作区域电极302,区域电极302与衬底1直接接触,区域电极302和电极301的材质相同,区域电极302为层状,控制区域电极302、衬底1、AlXGa1-XN紫外光吸收层2的横截面积相等,如图1、2所示,得到所述AlGaN基垂直结MSM紫外探测器。
以上所述仅是本发明的优选实施方式,本发明的保护范围并不仅局限于上述实施例。对于本技术领域的技术人员来说,在不脱离本发明技术构思前提下所得到的改进和变换也应视为本发明的保护范围。
Claims (10)
1.一种AlGaN基垂直结MSM紫外探测器,包括衬底(1),其特征在于,衬底(1)一侧由内至外依次设有AlXGa1-XN紫外光吸收层(2)、电极(301),所述电极(301)为正常叉指电极的一半,电极(301)沉积在AlXGa1-XN紫外光吸收层(2)的表面,所述衬底(1)的另一侧设有区域电极(302),区域电极(302)和电极(301)的材质相同,区域电极(302)为层状,且区域电极(302)、衬底(1)、AlXGa1-XN紫外光吸收层(2)的横截面积相等。
2.根据权利要求1所述的AlGaN基垂直结MSM紫外探测器,其特征在于,所述衬底(1)采用Pt、Cu、Al、Ag、Ti、Au等中的一种或多种材料复合而成。
3.根据权利要求1所述的AlGaN基垂直结MSM紫外探测器,其特征在于,所述AlXGa1-XN紫外光吸收层(2)的厚度为0.1~3μm。
4.根据权利要求1所述的AlGaN基垂直结MSM紫外探测器,其特征在于,所述电极(301)采用Ni、Au、Pt、Cu、Al、Ag、Cr、In中的一种或多种材料复合而成。
5.根据权利要求1所述的AlGaN基垂直结MSM紫外探测器,其特征在于,所述区域电极(302)采用Ni、Au、Pt、Cu、Al、Ag、Cr、In中的一种或多种材料复合而成,区域电极(302)与衬底(1)直接接触。
6.根据权利要求1~5中任一项所述AlGaN基垂直结MSM紫外探测器的制备方法,其特征在于,包括以下步骤:
(1)在非金属衬底上外延生长AlXGa1-XN紫外光吸收层(2);
(2)在AlXGa1-XN紫外光吸收层(2)上制作衬底(1);
(3)将非金属衬底同结构分离;
(4)在AlXGa1-XN紫外光吸收层(2)上进行光刻,制备电极(301);
(5)在衬底(1)表面制作区域电极(302),区域电极(302)与衬底(1)直接接触,控制区域电极(302)、衬底(1)、AlXGa1-XN紫外光吸收层(2)的横截面积相等,得到所述AlGaN基垂直结MSM紫外探测器。
7.根据权利要求6所述AlGaN基垂直结MSM紫外探测器,其特征在于,步骤(1)中,所述非金属衬底采用蓝宝石、二氧化硅、硅、碳化硅、氮化铝中的任意一种。
8.根据权利要求6所述AlGaN基垂直结MSM紫外探测器,其特征在于,步骤(1)中,所述外延生长采用金属有机气相外延(MOCVD)、分子束外延(MBE)、物理气相外延(PVD)和离子束外延(IBE)中的任意一种。
9.根据权利要求6所述AlGaN基垂直结MSM紫外探测器,其特征在于,步骤(3)中,采用干法刻蚀方法或者湿法蚀刻方法,将非金属衬底同结构分离。
10.根据权利要求6所述AlGaN基垂直结MSM紫外探测器的制备方法,其特征在于,步骤(5)中,利用磁控溅射、电子束蒸发、热蒸发等方式在衬底(1)表面制作区域电极(302)。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
CN101976697A (zh) * | 2010-09-17 | 2011-02-16 | 中国科学院上海技术物理研究所 | 具有AlGaN吸收层的热释电紫外探测器 |
CN102361046A (zh) * | 2011-09-30 | 2012-02-22 | 天津大学 | AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
CN102709395A (zh) * | 2012-06-12 | 2012-10-03 | 上海大学 | 一种CdZnTe薄膜紫外光探测器的制备方法 |
CN108493235A (zh) * | 2018-03-23 | 2018-09-04 | 电子科技大学 | 一种基于Mo/ZnON/Mo的MSM结构及其制备方法 |
-
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- 2019-08-12 CN CN201910739894.9A patent/CN110444615B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
CN101976697A (zh) * | 2010-09-17 | 2011-02-16 | 中国科学院上海技术物理研究所 | 具有AlGaN吸收层的热释电紫外探测器 |
CN102361046A (zh) * | 2011-09-30 | 2012-02-22 | 天津大学 | AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
CN102709395A (zh) * | 2012-06-12 | 2012-10-03 | 上海大学 | 一种CdZnTe薄膜紫外光探测器的制备方法 |
CN108493235A (zh) * | 2018-03-23 | 2018-09-04 | 电子科技大学 | 一种基于Mo/ZnON/Mo的MSM结构及其制备方法 |
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