CN110444556A - The forming method of cmos sensor and cmos sensor - Google Patents
The forming method of cmos sensor and cmos sensor Download PDFInfo
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- CN110444556A CN110444556A CN201910816560.7A CN201910816560A CN110444556A CN 110444556 A CN110444556 A CN 110444556A CN 201910816560 A CN201910816560 A CN 201910816560A CN 110444556 A CN110444556 A CN 110444556A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000926 separation method Methods 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000007667 floating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
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- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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Abstract
The present invention provides a kind of cmos sensors, it include: semiconductor devices, the electric charge barrier layer on the semiconductor devices and gate structure and the separation layer on the gate structure and the electric charge barrier layer, the present invention also provides a kind of forming methods of cmos sensor, comprising: forms semiconductor device；Electric charge barrier layer is formed on the semiconductor devices；Gate structure is formed on the semiconductor devices and in the electric charge barrier layer side；Separation layer is formed on the electric charge barrier layer and the gate structure.In the forming method of cmos sensor provided by the invention and cmos sensor, the positive charge that the electric charge barrier layer of formation can stop separation layer to generate, it can stop the charge in silicon nitride layer, reduce charge exhausting for pinning P-type layer, enhance pinning P-type layer, inhibit the combination of electronics and surface state in photodiode, so as to reducing the dark current in photodiode.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to the formation side of a kind of cmos sensor and cmos sensor
Method.
Background technique
Cmos image sensor (CIS) since its manufacturing process and existing integrated circuit fabrication process are compatible, while its
It compares and has many good qualities than original charge coupled device ccd in performance.Cmos image sensor can be by driving circuit and picture
Element integrates, and simplifies hardware design, while also reducing the power consumption of system.Cmos image sensor is due in acquisition light
Electric signal can be taken out while signal, moreover it is possible to which real time processed images information, speed are faster than ccd image sensor.CMOS figure
As sensor also has the advantages of cheap, bandwidth is larger, anti-blur, the flexibility of access and biggish fill factor.
Traditional active pixel is with photodiode as cmos image sensor part.Common active pixel cell
It is to be made of three transistors and a P+/N+/P- photodiode, this structure is suitble to the cmos image sensor of standard
Manufacturing process.In the spatial distribution design adulterated for photodiode, it is necessary to space-charge region be made to avoid crystal defect
The area that equal complex centres are concentrated, to reduce the dark current of pixel.In illumination, photodiode PD generates charge, at this moment turns
Moving pipe TX is closed state.Then transfer pipe is opened, and the charge of storage in the photodiode is transferred to floating node, is transmitted
Afterwards, transfer pipe is closed, and waits the entrance of illumination next time.Charge signal on floating node FD is used subsequently to adjustment amplification
Transistor.After reading, floating point is reset to a reference voltage by the reset transistor RST with reset gate.This design exists
Size on large scale pixel unit due to photodiode is larger, full-well capacity (ability of photodiode storage charge)
It is (most bright with most dark situation so as to the dynamic range that improves pixel unit so as to store more electronics to promotion
Ratio), influence of the noise to pixel is reduced, signal-to-noise ratio can increase.
Certain electron hole pair is generated since the aura wavelength in subsequent etching is shorter in existing structure, electronics is due to leading
Electrically can preferably it be guided, and corresponding vacancy then leaves, and forms one layer of thin layer with positive charge.This region passes through following
Silica the p-type of original heavy doping pinning layer can be exhausted part, reduce, generate so as to cause this layer of corresponding pinning effect
Additional dark current.
Summary of the invention
The purpose of the present invention is to provide the forming methods of a kind of cmos sensor and cmos sensor.
In order to achieve the above object, the present invention provides a kind of cmos sensors, comprising: semiconductor devices, be located at it is described
Electric charge barrier layer and gate structure on semiconductor devices and on the gate structure and the electric charge barrier layer every
Absciss layer.
Optionally, in the cmos sensor, the semiconductor devices includes substrate, shallow in the substrate
Groove isolation construction, photodiode and the pinning P-type layer on the photodiode.
Optionally, in the cmos sensor, the substrate is P type substrate.
Optionally, in the cmos sensor, the electric charge barrier layer and pinning P-type layer part are opposite.
Optionally, in the cmos sensor, the material of the separation layer is silicon nitride.
The present invention also provides a kind of forming methods of cmos sensor, comprising:
Form semiconductor device；
Electric charge barrier layer is formed on the semiconductor devices；
Gate structure is formed on the semiconductor devices and in the electric charge barrier layer side；
Separation layer is formed on the electric charge barrier layer and the gate structure.
Optionally, in the forming method of the cmos sensor, the method for forming semiconductor devices includes: offer one
Semiconductor substrate；Fleet plough groove isolation structure is formed in the substrate；Diode N is formed by ion implanting in the substrate
Type region and reset transistor region；Pinning P-type layer is formed in the diode n-type region.
Optionally, in the forming method of the cmos sensor, the method for forming electric charge barrier layer includes: described
Semiconductor device surface forms polysilicon layer, and etched portions polysilicon layer, which is formed, is located at the opposite charge resistance in pinning P-type layer top
Barrier.
Optionally, in the forming method of the cmos sensor, the method for forming gate structure includes: that etching is remaining
Polysilicon layer formed gate structure.
Optionally, in the forming method of the cmos sensor, the forming method of the cmos sensor further include:
N-type and P-type ion injection are carried out to the shallow-layer of photodiode.
In the forming method of cmos sensor provided by the invention and cmos sensor, the electric charge barrier layer of formation can be with
The positive charge for stopping separation layer to generate can stop the charge in silicon nitride layer, reduce charge exhausting for pinning P-type layer,
Enhance pinning P-type layer, it is secondary so as to reduce photodiode to inhibit the combination of electronics and surface state in photodiode
Dark current.
Detailed description of the invention
Fig. 1 is the flow chart of the forming method of the cmos sensor of the embodiment of the present invention；
Fig. 2 is the diagrammatic cross-section of the cmos sensor of the embodiment of the present invention；
In figure: 110- substrate, 120- fleet plough groove isolation structure, 130- photodiode, 140- pinning P-type layer, 150- electricity
Lotus barrier layer, 160- gate structure, 170- separation layer.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Hereinafter, term " first " " second " etc. is used between similar element distinguish, and is not necessarily for retouching
State certain order or time sequencing.It is appreciated that in the appropriate case, these terms so used are replaceable.Similar, if
Method described herein includes series of steps, and the sequence of these steps presented herein is not necessarily that these can be performed
The unique order of step, and some steps can be omitted and/or some other steps not described herein can be added
To this method.
The present invention provides a kind of cmos sensors, comprising: semiconductor devices, the charge on the semiconductor devices
Barrier layer and gate structure and the separation layer on the gate structure and the electric charge barrier layer.
Referring to Fig.1, the present invention also provides a kind of forming methods of cmos sensor, comprising:
S11: semiconductor device is formed；
S12: electric charge barrier layer is formed on the semiconductor devices；
S13: gate structure is formed on the semiconductor devices and in the electric charge barrier layer side；
S14: separation layer is formed on the electric charge barrier layer and the gate structure.
Specifically, referring to Fig. 2, provide a substrate 110, substrate 110 is P type substrate, formed on substrate 110 shallow trench every
From structure 120.
Photodiode 130 is formed in substrate 110, and forms the pinning P-type layer 140 on photodiode 130.
Gate polysilicon layer is formed on 110 surface of substrate.This polysilicon layer can be divided into two parts, etch first part
Polysilicon layer to form electric charge barrier layer 150, and electric charge barrier layer 150 is opposite with 140 part of pinning P-type layer, etches second
The polysilicon layer divided forms gate structure 160.
It forms separation layer 170 and covers electric charge barrier layer 150 and gate structure 160.Separation layer 170 is silicon nitride, is being worked
When, the separation layer 170 that silicon nitride is formed generates positive charge, and the electric charge barrier layer 150 of invention of the embodiment of the present invention is N-type, can
To stop the influence of positive charge in separation layer 170, and electric charge barrier layer 150 is in the case where subsequent technique is limited, Ke Yitong
Cross the charge problem for applying negative pressure to improve subsequent technique bring plasma.It can be effectively by the damage of subsequent plasma
Wound reduces.
Finally, the shallow-layer N and P-type ion to photodiode 130 inject.
To sum up, in the forming method of cmos sensor provided in an embodiment of the present invention and cmos sensor, the electricity of formation
The positive charge that lotus barrier layer can stop separation layer to generate can stop the charge in silicon nitride layer, reduce charge for pinning P
Type layer exhausts, and enhances pinning P-type layer, to inhibit the combination of electronics and surface state in photodiode, so as to reduce
Dark current in photodiode.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of cmos sensor characterized by comprising semiconductor devices, the charge resistance on the semiconductor devices
Barrier and gate structure and the separation layer on the gate structure and the electric charge barrier layer.
2. cmos sensor as described in claim 1, which is characterized in that the semiconductor devices includes substrate, positioned at described
Fleet plough groove isolation structure, photodiode in substrate and the pinning P-type layer on the photodiode.
3. cmos sensor as claimed in claim 2, which is characterized in that the substrate is P type substrate.
4. cmos sensor as claimed in claim 2, which is characterized in that the electric charge barrier layer and pinning P-type layer portion
Split-phase pair.
5. cmos sensor as described in claim 1, which is characterized in that the material of the separation layer is silicon nitride.
6. a kind of forming method of the cmos sensor based on any one of such as claim 1-5 cmos sensor, which is characterized in that
Include:
Form semiconductor device；
Electric charge barrier layer is formed on the semiconductor devices；
Gate structure is formed on the semiconductor devices and in the electric charge barrier layer side；
Separation layer is formed on the electric charge barrier layer and the gate structure.
7. the forming method of cmos sensor as claimed in claim 6, which is characterized in that form the method packet of semiconductor devices
It includes: semi-conductive substrate is provided；Fleet plough groove isolation structure is formed in the substrate；Pass through ion implanting shape in the substrate
At diode n-type region and reset transistor region；Pinning P-type layer is formed in the diode n-type region.
8. the forming method of cmos sensor as claimed in claim 6, which is characterized in that form the method packet of electric charge barrier layer
It includes: forming polysilicon layer in the semiconductor device surface, etched portions polysilicon layer forms opposite positioned at pinning P-type layer top
Electric charge barrier layer.
9. the forming method of cmos sensor as claimed in claim 8, which is characterized in that form the method packet of gate structure
It includes: etching remaining polysilicon layer and form gate structure.
10. the forming method of cmos sensor as claimed in claim 9, which is characterized in that the formation of the cmos sensor
Method further include: N-type is carried out to the shallow-layer of photodiode and P-type ion is injected.
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| CN201910816560.7A CN110444556B (en) | 2019-08-30 | 2019-08-30 | CMOS sensor and method for forming CMOS sensor |
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| CN201910816560.7A CN110444556B (en) | 2019-08-30 | 2019-08-30 | CMOS sensor and method for forming CMOS sensor |
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| US6534356B1 (en) * | 2002-04-09 | 2003-03-18 | Taiwan Semiconductor Manufacturing Company | Method of reducing dark current for an image sensor device via use of a polysilicon pad |
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