CN110438474B - Slide unit - Google Patents

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Publication number
CN110438474B
CN110438474B CN201910894567.0A CN201910894567A CN110438474B CN 110438474 B CN110438474 B CN 110438474B CN 201910894567 A CN201910894567 A CN 201910894567A CN 110438474 B CN110438474 B CN 110438474B
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Prior art keywords
substrate
processed
electrode
substrate bearing
bearing surface
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CN110438474A (en
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陈亮
王祥
汤亮才
戴虹
奚明
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Ideal Semiconductor Equipment Shanghai Co ltd
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Lixiang Jingyan Semiconductor Equipment Shanghai Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a slide glass unit applied to semiconductor processing equipment, which comprises a body part and a plurality of substrate bearing parts for accommodating substrates to be processed. The substrate bearing part is formed by enclosing a first substrate bearing surface and a second substrate bearing surface which are oppositely arranged on the body part and a third surface which is formed between the first substrate bearing surface and the second substrate bearing surface, namely the first substrate bearing surface, the second substrate bearing surface and the third surface are not provided with a clamping lock or a fixing structure which can cause the surface to be processed of the substrate to be processed to be shielded, the problem of uneven coating is avoided, meanwhile, when the slide glass unit rotates to a first position, the first substrate bearing surface bears the first surface of the substrate to be processed, when the slide glass unit rotates to a second position, the second substrate bearing surface bears the second surface of the substrate to be processed, repeated mounting is avoided, and the production efficiency and the yield are improved.

Description

Slide unit
Technical Field
The invention relates to the technical field of manufacturing of crystalline silicon solar cells, in particular to a slide glass unit.
Background
The crystalline silicon Solar Cell is a leading product in the photovoltaic industry, and efficient cells such as a Passivated Emitter back field point contact Cell (PERC), a Passivated Emitter back contact Cell (PESC), a Passivated Emitter back local diffusion Cell (PERL) and the like have been developed at present by optimizing the production process and structure of the crystalline silicon Solar Cell, the photoelectric conversion efficiency can be close to 20% or even higher than 20%, and the crystalline silicon Solar Cell has a good application prospect.
With the breakthrough of the crystalline silicon solar cell in the photoelectric conversion efficiency, it is important to improve the productivity of the device and the yield of the product from the viewpoint of industrial application. In the prior art, a clamp point for fixing a silicon wafer is arranged on the surface of a boat piece of a graphite boat for loading the silicon wafer, the silicon wafer is firstly inserted into the graphite boat and is fixed on the surface of the graphite boat through the clamp point, and then the graphite boat loaded with the silicon wafer is sent into a process chamber. In this case, blocking of the stuck point easily causes uneven coating of the corresponding position of the silicon wafer, which affects the photoelectric conversion efficiency of the cell. In addition, when the silicon wafer needs to be turned over, the process cavity needs to be cooled firstly, then the graphite boat is moved out of the coating equipment, then the silicon wafer is turned over and re-loaded, and finally the graphite boat is sent into the process cavity again, so that the process flow is complicated, and the production efficiency is not improved. More importantly, repeated mounting of the silicon wafer easily affects the yield of the product, and is not beneficial to improvement of photoelectric conversion efficiency.
Therefore, there is a need to develop a new slide unit to avoid the above problems in the prior art.
Disclosure of Invention
The invention aims to provide a slide glass unit applied to semiconductor processing equipment, which is used for avoiding the problems that the coating is uneven, and the process flow is complicated and is not beneficial to improving the production efficiency and the yield is easily influenced because the silicon wafers are repeatedly mounted outside a process cavity.
The semiconductor processing equipment comprises a tubular deposition cavity, a gas supply unit and a moving unit, wherein the moving unit is used for moving the slide glass unit into or out of the tubular deposition cavity.
In order to achieve the above object, the slide glass unit of the present invention includes a body portion and a plurality of substrate bearing portions formed on the body portion, wherein the substrate bearing portions are configured to receive a substrate to be processed, each substrate bearing portion is formed by a first substrate bearing surface and a second substrate bearing surface that are oppositely disposed on the body portion, and a third surface formed between the first substrate bearing surface and the second substrate bearing surface, when the slide glass unit rotates to a first position, the first substrate bearing surface of the substrate bearing portion bears a first surface of the substrate to be processed, and when the slide glass unit rotates to a second position, the second substrate bearing surface of the substrate bearing portion bears a second surface of the substrate to be processed.
The slide glass unit has the beneficial effects that: the substrate bearing part of the slide glass unit for containing the substrate to be processed is formed by surrounding a first substrate bearing surface and a second substrate bearing surface which are oppositely arranged on the body part and a third surface formed between the first substrate bearing surface and the second substrate bearing surface, namely the first substrate bearing surface, the second substrate bearing surface and the third surface are not provided with a locking or fixing structure which can cause the surface to be processed of the substrate to be processed to be shielded, so that the problem of uneven coating is avoided, and the surface to be processed is any one or more of the first surface or the second surface of the substrate to be processed. When the slide glass unit rotates to a first position, the first substrate bearing surface of the substrate bearing part bears the first surface of the substrate to be processed, and when the slide glass unit rotates to a second position, the second substrate bearing surface of the substrate bearing part bears the second surface of the substrate to be processed, so that the problems that the production efficiency is not improved and the yield is easily influenced due to the fact that the process flow is complicated because repeated mounting of silicon wafers is carried out outside the process chamber are avoided.
Preferably, the main body further includes a first electrode contact post and a second electrode contact post, the first electrode contact post is electrically connected to the first substrate carrying surface of the substrate carrying portion, the second electrode contact post is electrically connected to the second substrate carrying surface of the substrate carrying portion, and the first substrate carrying surface and the second substrate carrying surface form a positive electrode and a negative electrode in an electrically connected state.
Further preferably, the first electrode contact column and the second electrode contact column are movably connected with a plasma generation power supply, and in the process that the slide glass unit rotates from the first position to the second position, the first electrode contact column and the second electrode contact column are far away from the plasma generation power supply so as to avoid plasma chemical deposition on the substrate to be processed in the rotating process.
Preferably, the area of the first substrate bearing surface and the area of the second substrate bearing surface of a single substrate bearing part are larger than the area of the substrate to be processed, the first substrate bearing surface and the second substrate bearing surface are solid cavity surfaces, and in the process of depositing the substrate to be processed, the surface of the substrate to be processed, which is in contact with the first substrate bearing surface or the second substrate bearing surface, is in a closed state, so as to avoid the generation of deposition.
Preferably, the first substrate bearing surface is parallel to the second substrate bearing surface to ensure uniform plasma electric field intensity therebetween, and the distance between the first substrate bearing surface and the second substrate bearing surface is 1mm-15 mm.
Further preferably, the first substrate bearing surface and the second substrate bearing surface comprise a first graphite boat piece facing the outer surface of the inner wall of the tubular deposition cavity, and a plurality of second graphite boat pieces located between the first graphite boat pieces, the thickness range of the second graphite boat pieces is 0.5mm-2.5mm, and the thickness range of the first graphite boat pieces is 1.5-10 mm.
Further preferably, the surfaces of the first substrate carrying surface and the second substrate carrying surface are smooth surfaces, so as to ensure that the substrate to be processed is in sufficient electrical contact with the first substrate carrying surface or the second substrate carrying surface during the deposition process.
Further preferably, the first substrate bearing surface and the second substrate bearing surface are provided with a plurality of salient points, and the height of the salient points is less than 1mm, so as to ensure that the substrate to be processed is in sufficient electrical contact with the first substrate bearing surface or the second substrate bearing surface in the deposition process.
Further preferably, one or more grooves are formed on the surfaces of the first substrate bearing surface and the second substrate bearing surface, and the area of each groove is smaller than that of the substrate to be processed.
Further preferably, the first electrode contact column comprises a plurality of first conductive blocks stacked, every two adjacent first conductive blocks are pressed on the first side of a solid graphite boat sheet between the first conductive blocks to form a first electrode bearing boat sheet, the first electrode bearing boat sheet is fixed, sufficient contact area is ensured, and poor electrical contact caused by thermal expansion and cold contraction of the first electrode bearing boat sheet due to temperature change in the tubular deposition cavity is avoided.
Further preferably, the second electrode contact column comprises a plurality of second conductive blocks which are stacked, every two of the second conductive blocks are adjacent to each other, a second side of a solid graphite boat piece is pressed between the second conductive blocks to form a second electrode bearing boat piece, the second electrode bearing boat piece is fixed, sufficient contact area is ensured, and poor electrical contact caused by thermal expansion and cold contraction of the second electrode bearing boat piece due to temperature change in the tubular deposition cavity is avoided.
Further preferably, the body further comprises an insulating blocking rod, and the insulating blocking rod penetrates through the graphite boat piece and is used for blocking the to-be-processed substrate in the substrate bearing part so as to prevent the to-be-processed substrate from being thrown out in the rotating process.
Further preferably, one end of the slide glass unit, which is far away from the moving unit, is provided with a rotating part, and the rotating part drives the body part to rotate to a preset position in the tubular cavity.
Further preferably, the preset position is a position where the substrate is parallel to the ground, so as to avoid deformation of the substrate bearing part or the substrate to be processed due to gravity in the deposition process.
Further preferably, the slide glass unit comprises support parts arranged at two ends to support the slide glass unit to be suspended in the tubular deposition cavity.
Further preferably, an insulating portion is further included to electrically insulate the support portion from the body portion.
Further preferably, the substrate to be processed is a silicon wafer.
Drawings
FIG. 1 is a schematic structural view of a semiconductor processing apparatus of the present invention;
FIG. 2a is a schematic structural diagram of a slide unit according to the present invention;
FIG. 2b is a right side view of the slide unit shown in FIG. 2 a;
FIG. 3 is a schematic view of an assembly structure of a substrate to be processed and a substrate carrying part according to the present invention;
FIG. 4 is a schematic view of the mounting structure of the slide unit of the present invention in the tubular deposition chamber;
fig. 5 is a schematic view of an assembly structure of the rotating part and the slide unit shown in fig. 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
In view of the problems of the prior art, embodiments of the present invention provide a slide unit for a semiconductor processing apparatus.
FIG. 1 is a schematic block diagram of a semiconductor processing apparatus according to some embodiments of the present invention.
Referring to fig. 1, a semiconductor processing apparatus 1 includes a tubular deposition chamber 11, a gas supply unit 12, and a moving unit 13, wherein the moving unit 13 moves in a horizontal direction to move a slide unit (not shown) into and out of the tubular deposition chamber 11. The gas supply unit 12 is disposed outside the tubular deposition chamber 11 to supply at least three gases to the inside of the tubular deposition chamber 11.
In some embodiments of the present invention, the gas supplied by the gas supply unit 12 at least comprises Silane (SiH)4) Ammonia gas (NH)3) And an inert gas.
In some embodiments of the present invention, the gas supplied by the gas supply unit 12 at least comprises SiH4Dinitrogen monoxide (N)2O) and an inert gas. The inert gas comprises nitrogen (N)2) One or more of helium (He) or argon (Ar).
In some embodiments of the present invention, the semiconductor processing apparatus 1 is a PECVD deposition apparatus.
Fig. 2a is a schematic structural diagram of a slide unit according to some embodiments of the invention. Figure 2b is a right side view of the slide unit shown in figure 2 a. FIG. 3 is a schematic view of an assembly structure between a substrate carrier and a substrate to be processed according to the present invention.
Referring to fig. 2a and 2b, the slide unit 2 includes a body portion 21 and a plurality of substrate-carrying portions 22 formed on the body portion 21. The body portion 21 includes a graphite boat blade (not shown) and an insulating stopper rod 25. The insulation blocking rod 25 penetrates through and fixes the graphite boat piece (not shown in the figure) to block a substrate to be processed (not shown in the figure) in the substrate bearing part 22, so as to prevent the substrate to be processed (not shown in the figure) from being thrown out in the rotation process.
In some embodiments of the present invention, a plurality of the graphite boat pieces (not shown) are parallel to each other, and a plurality of the insulation barrier bars 25 are parallel to each other and perpendicular to the graphite boat pieces (not shown).
Referring to fig. 2b and 3, a first substrate carrying part 33 is formed between the first graphite boat 28 and the second graphite boat 29, and the first substrate carrying part 33 is surrounded by a first substrate carrying surface 281 and a second substrate carrying surface 291 which are oppositely arranged, and a third surface (not labeled in the figure) formed between the first substrate carrying surface 281 and the second substrate carrying surface 291.
Referring to fig. 2a and 2b, the body portion 21 further includes a first electrode contact post 23 and a second electrode contact post 24. Taking the first substrate bearing part 33 as an example, the first electrode contact stud 23 is electrically connected to the first substrate bearing surface 281 of the first substrate bearing part 33, the second electrode contact stud 24 is electrically connected to the second substrate bearing surface 291 of the first substrate bearing part 33, and the first substrate bearing surface 281 and the second substrate bearing surface 291 form positive and negative electrodes in an electrically connected state.
In some embodiments of the present invention, the material of the first substrate carrying surface 281 and the second substrate carrying surface 291 is a conductive material.
In some embodiments of the present invention, when the semiconductor processing apparatus 1 is a PECVD deposition apparatus, the first substrate supporting surface 281 and the second substrate supporting surface 291 are respectively used as a positive electrode and a negative electrode for generating a plasma electric field during the deposition process of the substrate to be processed.
In some embodiments of the present invention, the first electrode contact column 23 and the second electrode contact column 24 are movably connected to the plasma generation power source, and when the slide glass unit 2 rotates, the first electrode contact column 23 and the second electrode contact column 24 are far away from the plasma generation power source to break electrical contact, so as to prevent plasma chemical deposition from occurring on the surface of the substrate to be processed during the rotation.
Specifically, the first graphite boat 28 is vertically and fixedly connected to the first electrode contact column 23 along the horizontal direction, and the second graphite boat 29 is vertically and fixedly connected to the second electrode contact column 24 along the horizontal direction.
Referring to fig. 2b, the first electrode contact pillar 23 and the second electrode contact pillar 24 each include a plurality of conductive blocks (not labeled) stacked on each other and are respectively provided with a first electrode interface 26 and a second electrode interface 27.
In some embodiments of the present invention, taking the first electrode contact pillar 23 as an example, the first side of a solid graphite boat piece is pressed between every two adjacent conductive blocks to form a first electrode carrying boat piece.
Specifically, taking the first graphite boat piece 28 as an example, the first side of the first graphite boat piece 28 is a portion pressed between a first conductive block 241 and a second conductive block 242 which are arranged along the vertical direction, and the pressing of the first graphite boat piece 28 by the first conductive block 241 and the second conductive block 242 makes the first graphite boat piece 28 become a first electrode carrier boat piece.
Correspondingly, the second side of the second graphite boat piece 29 is a portion pressed between a third conductive block (not labeled in the figure) and a fourth conductive block (not labeled in the figure) which are respectively arranged opposite to the first conductive block 241 and the second conductive block along the horizontal direction, and the pressing of the second graphite boat piece 29 by the third conductive block (not labeled in the figure) and the fourth conductive block (not labeled in the figure) makes the second graphite boat piece 29 become a second electrode boat bearing piece (not labeled in the figure).
The first conductive block 241 and the second conductive block 242 with the mode of setting between the first graphite boat piece 28, and the third conductive block (not marked in the figure) with the fourth conductive block (not marked in the figure) with the mode of setting between the second graphite boat piece 29 can avoid because the temperature variation in the tubular deposition cavity (not marked in the figure) produces graphite boat piece (not marked in the figure) expand with heat and contract with cold after the graphite boat piece (not marked in the figure) with first electrode contact post 23 with contact failure's problem between the second electrode contact post 24.
When the first electrode interface 26 is a positive electrode interface, and the second electrode interface 27 is a negative electrode interface and is respectively connected to a plasma power supply (not shown) disposed outside the slide unit 2, the lower surfaces of the first graphite boat 28, i.e., the first substrate bearing surface 281 and the upper surfaces of the second graphite boat 29, i.e., the second substrate bearing surface 291, are respectively used as a positive electrode and a negative electrode for forming a plasma electric field.
Specifically, the conductive block is a graphite block.
When the slide glass unit 2 rotates to the first position, the second substrate supporting surface 291 is located right below the first substrate supporting surface 281, and the second substrate supporting surface 291 supports the second surface 32 of the substrate to be processed to completely adhere to the second surface 32, so that the second surface 32 is prevented from receiving a deposition coating.
When the slide glass unit 2 rotates to the second position, the first base sheet bearing surface 281 is located right below the second base sheet bearing surface 291, and the first base sheet bearing surface 281 bears the first surface 31 of the substrate to be processed to completely adhere to the first surface 31, so that the first surface 31 is prevented from receiving deposition coating.
The first base sheet bearing surface 281 and the second base sheet bearing surface 291 are both solid cavity surfaces, so that in the process of depositing the substrate to be processed (not shown in the figures), a surface of the substrate to be processed (not shown in the figures) contacting with the first base sheet bearing surface 281 or the second base sheet bearing surface 291 is in a closed state, so as to avoid the generation of deposition.
In some embodiments of the present invention, the areas of the first and second base sheet bearing surfaces 281 and 291 are larger than the area of the substrate to be processed (not shown).
In some embodiments of the present invention, the first substrate carrying surface 281 and the second substrate carrying surface 291 are parallel to ensure uniform plasma electric field intensity therebetween. More specifically, the first substrate carrying surface 281 and the second substrate carrying surface 291 are spaced apart by 1mm to 15 mm.
In some embodiments of the present invention, the first base sheet carrying surface 281 and the second base sheet carrying surface 291 are smooth surfaces to ensure that the substrate to be processed has sufficient electrical contact with the first base sheet carrying surface 281 or the second base sheet carrying surface 291 during the deposition process.
In other embodiments of the present invention, the first base sheet carrying surface 281 and the second base sheet carrying surface 291 have bumps with a height less than 1mm, so as to ensure that the substrate to be processed has sufficient electrical contact with the first base sheet carrying surface 281 or the second base sheet carrying surface 291 during the deposition process.
In some embodiments of the present invention, the first and second base sheet bearing surfaces 281 and 291 have one or more grooves on their surfaces, and the area of the grooves is smaller than that of the substrate to be processed.
In some embodiments of the present invention, the cavity surface on which the first substrate carrying surface 281 or the second substrate carrying surface 291 is located includes an inner cavity surface and a cavity surface on which an outer surface facing the inner wall of the tubular deposition cavity 11 is located, and a thickness of the inner cavity surface ranges from 0.5mm to 2.5 mm. Specifically, referring to fig. 2b, each of the graphite boat pieces (not shown) has a thickness of 0.5mm to 2.5 mm.
Further, the body part 21 comprises an outer surface facing the inner wall of the tubular deposition chamber 11, and the thickness of the body part on which the outer surface is located is 1.5-10 mm. Specifically, referring to fig. 2b, the thickness of the third graphite boat piece 30 at the top and the thickness of the second graphite boat piece 29 at the bottom are both 1.5-10mm, so as to reinforce the strength of the body part 21.
Fig. 4 is a schematic view of the mounting structure of the slide unit in the tubular deposition chamber. Fig. 5 is a schematic view of an assembly structure of the rotating part and the slide unit shown in fig. 4.
Referring to fig. 4, the slide glass unit 2 is accommodated in the tubular deposition chamber 11, and a rotating part 41 is disposed at one end of the slide glass unit 2 close to the movable chamber door 111 of the tubular deposition chamber 11 to drive the slide glass unit 2 to rotate to a preset position.
In some embodiments of the present invention, the preset position is a position where the substrate to be processed is parallel to the ground, so as to prevent the substrate bearing portion 22 or the substrate to be processed from being deformed due to gravity during the deposition process.
Referring to fig. 5, the rotating portion 41 includes a driving pulley 411, a driven pulley 412, and a supporting pulley 413. The driven wheel 412 is fixedly connected to one end of the slide glass unit 2 facing the movable cavity door 111; the driving wheel 411 is disposed below one side of the driven wheel 412 and connected to one end of a first connecting rod 481; the supporting wheel 413 is disposed opposite to the driving wheel 411 on the other side of the driven wheel 412.
Referring to fig. 4, the exterior of the tubular deposition chamber 11 is provided with a rotary driving motor 46. The rotation driving motor 46 is disposed outside the movable chamber door 111 to drive the driving wheel 411 to rotate by driving the first connecting rod 481.
Further, referring to fig. 4, a first connection portion (not shown) is provided on a surface of the movable chamber door 111 facing the rotating portion 41 to be connected to the other end of the first connection rod 481, and the slide unit 2 is supported by the first connection rod 481. One end of the second connecting rod 482 is connected to the supporting wheel 413, and the other end is connected to the first connecting portion (not shown) to support the slide unit 2.
In some embodiments of the present invention, the driving wheel 411 and the driven wheel 412 are both provided with gears, so that the driving wheel 411 drives the driven wheel 412 to rotate in a meshing transmission manner.
In other embodiments of the present invention, the transmission mode between the driving wheel 411 and the driven wheel 412 is any one or more of gear transmission, chain transmission, friction transmission, belt transmission and magnetic transmission.
In some embodiments of the present invention, the driven wheel 412 further comprises a smooth portion (not shown), and the support wheel 413 has a smooth contact portion (not shown) for contacting the smooth portion (not shown) of the driven wheel 412 to support the slide unit 2.
In other embodiments of the present invention, the transmission between the driven wheel 412 and the supporting wheel 413 may be any one or more of gear transmission, chain transmission, friction transmission, belt transmission and magnetic transmission.
Further, a linkage portion 42 is disposed at an end of the slide glass unit 2 away from the movable chamber door 111, and a second connecting portion (not shown) is disposed at an end surface of the tubular deposition chamber 11 facing the linkage portion 42.
Specifically, the linkage portion 42 includes a first linkage portion (not shown) and a second linkage portion (not shown) which are disposed opposite to the supporting wheel 413 and the driving wheel 411, the first linkage portion (not shown) is connected to the second connecting portion (not shown) through a third connecting rod (not shown) which is located at the same horizontal line as the first connecting rod 481, and the second linkage portion (not shown) is connected to the second connecting portion (not shown) through a fourth connecting rod (not shown) which is located at the same horizontal line as the second connecting rod 482. The first connecting rod 481, the second connecting rod 482, the third connecting rod (not shown) and the fourth connecting rod (not shown) suspend the slide unit 2 within the tubular deposition chamber 11.
In some embodiments of the present invention, referring to fig. 5, an insulating member (not shown) is further disposed between the driven pulley 412 and an end of the slide glass unit 2 close to the movable door 111 of the tubular deposition chamber 11. So that the driven pulley 412 is not in electrical contact with the body portion of the slide unit 2.
Referring to fig. 4 and 5, a plasma supply source 44 is disposed outside the tubular deposition chamber 11, and the plasma supply source 44 includes a first electrode (not shown) and a second electrode (not shown) to be electrically connected to the first electrode interface 26 and the second electrode interface 27 of the slide unit 2, respectively.
The movable chamber door 111 is provided with a first electrode stretching portion 471 and a second electrode stretching portion 472, and the first electrode stretching portion 471 and the second electrode stretching portion 472 are electrically connected to the first electrode (not shown) and the second electrode (not shown) respectively.
In some embodiments of the present invention, the first electrode (not shown) and the second electrode (not shown) form a positive electrode and a negative electrode.
When the slide glass unit 2 needs to be rotated, the supply of the plasma generation power source in the tubular deposition chamber 11 is first interrupted, that is, the first electrode (not shown in the figure) and the second electrode (not shown in the figure) are respectively electrically disconnected from the first electrode interface 26 and the second electrode interface 27 by driving the first electrode telescopic part 471 and the second electrode telescopic part 472 to move away from the rotating part 11, and then the slide glass unit 2 is driven to rotate by the rotating part 41.
When the slide glass unit 2 is rotated, the first electrode stretching part 471 and the second electrode stretching part 472 are first driven to move toward the rotating part 41, so that the first electrode (not shown) and the second electrode (not shown) are respectively in conductive connection with the first electrode interface 26 and the second electrode interface 27, and then the plasma generation power supply in the tubular deposition cavity 11 is switched on, so as to perform a film coating treatment on the to-be-treated bottom in the slide glass unit 2.
The outside of the tubular deposition chamber 11 is provided with a vacuum pump 43. Specifically, the vacuum pump 43 penetrates the movable chamber door 111 through a gas passage 431 to communicate with the inside of the tubular deposition chamber 11. The vacuum pump 43 is used for controlling the vacuum degree in the tubular deposition chamber 11.
And a magnetic fluid sealing device 45 is arranged outside the tubular deposition cavity 11. Specifically, the magnetic fluid sealing device 45 is disposed between the movable chamber door 111 and the rotary driving motor 46 to further enhance the sealing performance of the movable chamber door 111.
In some embodiments of the present invention, the substrate to be processed is a silicon wafer.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (16)

1. A slide glass unit is applied to semiconductor processing equipment, the semiconductor processing equipment comprises a tubular deposition cavity, a gas supply unit and a moving unit, the moving unit is used for moving the slide glass unit to enter or leave the tubular deposition cavity, the slide glass unit is characterized by comprising a body part and a plurality of substrate bearing parts formed on the body part, the substrate bearing parts are used for accommodating a substrate to be processed, the substrate bearing parts are formed by a first substrate bearing surface and a second substrate bearing surface which are oppositely arranged on the body part and a third surface formed between the first substrate bearing surface and the second substrate bearing surface, when the slide glass unit rotates to a first position, the first substrate bearing surface of the substrate bearing parts bears a first surface of the substrate to be processed, when the slide glass unit rotates to a second position, the second substrate bearing surface of the substrate bearing part bears the second surface of the substrate to be processed;
the body part further comprises a first electrode contact column and a second electrode contact column, the first electrode contact column is electrically connected with the first substrate bearing surface of the substrate bearing part, the second electrode contact column is electrically connected with the second substrate bearing surface of the substrate bearing part, and the first substrate bearing surface and the second substrate bearing surface form a positive electrode and a negative electrode under an electric connection state.
2. The slide glass unit according to claim 1, wherein the first electrode contact post and the second electrode contact post are movably connected to a plasma generation power supply, and in a process of rotating the slide glass unit from the first position to the second position, the first electrode contact post and the second electrode contact post are away from the plasma generation power supply to avoid plasma chemical deposition on the substrate to be processed in the rotating process.
3. The slide glass unit as claimed in claim 2, wherein the area of the first and second substrate carrying surfaces of a single substrate carrying part is larger than that of the substrate to be processed, the first and second substrate carrying surfaces are solid cavity surfaces, and during the deposition of the substrate to be processed, the surface of the substrate to be processed contacting the first or second substrate carrying surfaces is in a closed state to avoid the deposition.
4. The slide unit of claim 3, wherein the first substrate supporting surface and the second substrate supporting surface are parallel to ensure uniform plasma electric field intensity therebetween, and the distance between the first substrate supporting surface and the second substrate supporting surface is 1mm to 15 mm.
5. The slide glass unit according to claim 4, wherein the first substrate carrying surface and the second substrate carrying surface comprise a first graphite boat sheet facing an outer surface of an inner wall of the tubular deposition chamber, and a plurality of second graphite boat sheets located between the first graphite boat sheets, the second graphite boat sheets having a thickness in a range of 0.5mm to 2.5mm, and the first graphite boat sheets having a thickness in a range of 1.5 mm to 10 mm.
6. The slide unit as recited in claim 5, wherein the surfaces of the first and second substrate carrying surfaces are smooth to ensure adequate electrical contact of the substrate to be processed with the first or second substrate carrying surfaces during deposition.
7. The slide unit as recited in claim 5, wherein the first and second substrate carrying surfaces have a plurality of raised points with a height of less than 1mm to ensure adequate electrical contact of the substrate to be processed with the first or second substrate carrying surfaces during deposition.
8. The slide unit as recited in claim 5, wherein the first and second substrate carrying surfaces have one or more recesses therein, the recesses having an area less than an area of the substrate to be processed.
9. The chip unit according to claim 6, wherein the first electrode contact post comprises a plurality of stacked first conductive blocks, and a first side of a solid graphite boat piece is pressed between every two adjacent first conductive blocks to form a first electrode carrier boat piece, and the first electrode carrier boat piece is fixed, so as to ensure a sufficient contact area and avoid poor electrical contact caused by thermal expansion and contraction of the first electrode carrier boat piece due to temperature change in the tubular deposition cavity.
10. The chip unit according to claim 9, wherein the second electrode contact post comprises a plurality of second conductive blocks stacked on each other, and a second side of a solid graphite boat piece is pressed between every two adjacent second conductive blocks to form a second electrode carrier boat piece, and the second electrode carrier boat piece is fixed, so as to ensure a sufficient contact area and avoid poor electrical contact caused by thermal expansion and contraction of the second electrode carrier boat piece due to temperature change in the tubular deposition cavity.
11. The slide unit according to claim 10, wherein the body further comprises an insulating barrier rod extending through the graphite boat for blocking the substrate to be processed in the substrate holder from being thrown out during rotation.
12. The slide unit as claimed in claim 11, wherein a rotating part is disposed at an end of the slide unit away from the moving unit, and the rotating part drives the body to rotate to a predetermined position in the tubular cavity.
13. The slide unit according to claim 12, wherein the predetermined position is a position where the substrate to be processed is parallel to the ground so as to prevent the substrate holder or the substrate to be processed from being deformed by gravity during deposition.
14. The slide unit as in claim 12, comprising support portions disposed at both ends to support the slide unit suspended within the tubular deposition chamber.
15. The slide unit as in claim 14, further comprising an insulating portion to electrically insulate the support portion from the body portion.
16. The slide unit as claimed in claim 14, wherein the substrate to be treated is a silicon wafer.
CN201910894567.0A 2019-09-20 2019-09-20 Slide unit Active CN110438474B (en)

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CN111118478A (en) * 2019-12-31 2020-05-08 湖南红太阳光电科技有限公司 PECVD equipment for preparing heterojunction battery thin film
CN111690912A (en) * 2020-07-30 2020-09-22 东方日升新能源股份有限公司 Double-sided coating equipment and double-sided coating method of battery piece
CN114121586B (en) * 2020-09-01 2024-10-11 苏州拓升智能装备有限公司 Semiconductor processing equipment
CN113130359A (en) * 2021-04-09 2021-07-16 深圳市捷佳伟创新能源装备股份有限公司 Tray and slide glass device
CN114284125B (en) * 2021-12-30 2024-01-16 上海集成电路研发中心有限公司 Ion implantation apparatus and control method thereof

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CN208965031U (en) * 2018-09-06 2019-06-11 深圳市捷佳伟创新能源装备股份有限公司 A kind of loading device of stable plated film
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CN209210920U (en) * 2018-11-07 2019-08-06 浙江艾能聚光伏科技股份有限公司 A kind of structure improved graphite boat

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Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602

Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd.

Address before: 201620 Shanghai city Songjiang District Sixian Road No. 3255 Building No. 3, B building four floor

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Denomination of invention: Carrier unit

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