CN114284125B - Ion implantation apparatus and control method thereof - Google Patents
Ion implantation apparatus and control method thereof Download PDFInfo
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- CN114284125B CN114284125B CN202111659993.XA CN202111659993A CN114284125B CN 114284125 B CN114284125 B CN 114284125B CN 202111659993 A CN202111659993 A CN 202111659993A CN 114284125 B CN114284125 B CN 114284125B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims abstract description 4
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an ion implantation device and a control method thereof. The ion implantation device comprises an object carrying part, a rotation control part, N rotation parts and a temperature control pipeline, wherein N is a positive integer greater than 1. The N rotating parts are sequentially and movably connected with the rotating control part in a communication way, and the rotating control part controls at least one rotating part to rotate so as to drive the carrying part to rotate, so that the large-angle rotation of the carrying part is realized; the temperature control pipeline extends towards the carrying part in a spiral mode and is arranged at each rotating part, and is arranged at the bottom of the carrying part, so that the temperature control pipeline is prevented from rotating at an excessive angle once, and the risk of cracking and leakage of the cooling pipe is reduced.
Description
Technical Field
The present invention relates to the field of semiconductor device manufacturing technology, and in particular, to an ion implantation apparatus and a control method thereof.
Background
Along with the development of the CMOS process at a high speed according to the law of massage, the requirements of the CMOS device on ultra-shallow junctions are higher and higher, and the low-temperature injection technology is developed accordingly. The traditional low-temperature ion implanter is used for cooling the silicon wafer by entering the bottom of the stage for bearing the silicon wafer through a cooling pipeline for injecting liquid nitrogen or liquid helium, and performing a low-temperature ion implantation process. Because the temperature is lower, the silicon wafer stage can rotate and drive the cooling pipe to twist according to the process requirement, and the problems of cracking of the cooling pipe, liquid leakage and the like are easily caused.
Therefore, there is a need to develop a novel ion implantation apparatus and a control method thereof to solve the above-mentioned problems of the prior art.
Disclosure of Invention
The invention aims to provide an ion implantation device and a control method thereof, which are used for realizing large-angle rotation of a carrying part and reducing the risks of cracking and causing liquid leakage of a cooling pipe.
To achieve the above object, the ion implantation apparatus of the present invention includes:
a carrying part;
the N rotating parts are sequentially and movably connected, the Nth rotating part is movably connected with the carrying part, and N is a positive integer greater than 1;
the rotation control part is in communication connection with the N rotation parts and controls at least one rotation part to rotate so as to drive the carrying part to rotate;
the temperature control pipeline extends towards the carrying part in a spiral mode and is arranged on each rotating part and the carrying part.
The ion implantation device has the beneficial effects that: the N rotating parts are sequentially and movably connected with the rotating control part in a communication way, and the rotating control part controls at least one rotating part to rotate so as to drive the carrying part to rotate, so that the large-angle rotation of the carrying part is realized; the temperature control pipeline extends towards the carrying part in a spiral mode and is arranged at each rotating part, and is arranged at the bottom of the carrying part, so that the temperature control pipeline is prevented from rotating at an excessive angle once, and the risk of cracking and leakage of the cooling pipe is reduced.
Preferably, the temperature control pipeline further extends from the carrying part in a spiral shape away from the carrying part and is arranged at each rotating part.
Further preferably, the temperature control pipeline is in a double-spiral shape.
Preferably, the number of the temperature control pipelines is at least 2.
Preferably, the temperature control pipeline is fixedly arranged on each rotating part.
Preferably, the device further comprises a body part and an opening cavity arranged on the body part, the N rotating parts are arranged in the opening cavity, the object carrying part is arranged on one side surface of the body part and movably connected with the N rotating parts, and the temperature control pipeline is led in from the opening end of the opening cavity.
Further preferably, an insulating cavity is also included, the insulating cavity being located at the open cavity end.
Further preferably, the refrigerator further comprises at least one refrigerating part arranged on the body part, and the at least one refrigerating part is positioned between the accommodating cavity and the carrying part.
The control method of the ion implantation device comprises the following steps:
and controlling at least one rotating part to rotate through the rotation control part so as to drive the carrying part to rotate.
Preferably, in the step S1, the step of controlling rotation of at least one of the rotating parts by the rotation control part includes: the N rotating parts are controlled to sequentially rotate through the rotating control part, when the Mth rotating part rotates, the Mth+1th rotating part to the Nth rotating part and the carrying part synchronously rotate, and M is a positive integer which is more than 0 and less than N.
Drawings
Fig. 1 is a schematic structural diagram of a first ion implantation apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a second ion implantation apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a third ion implantation apparatus according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a fourth ion implantation apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a fifth ion implantation apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a sixth ion implantation apparatus according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
The embodiment of the invention provides an ion implantation device and a control method thereof, which are used for realizing large-angle rotation of a carrying part and reducing the risk of cracking a cooling pipe and causing liquid leakage.
Fig. 1 is a schematic structural diagram of a first ion implantation apparatus according to an embodiment of the present invention.
Referring to fig. 1, the ion implantation apparatus shown in fig. 1 includes a loading part 11, N rotating parts 12, and a temperature control pipe 13. The N rotating parts 12 are sequentially connected, and the nth rotating part, that is, the rightmost rotating part 12 shown in fig. 1, is movably connected with the carrying part 11, so as to drive the carrying part 11 to rotate. Wherein N is a positive integer greater than 1.
In some embodiments, the carrying portion 11 is configured to carry a substrate to be ion implanted.
In some embodiments, the temperature control pipe 13 is used for draining the temperature control medium.
In some embodiments, the temperature control medium is a cooling medium, so as to achieve a cooling effect on the substrate carried by the carrying portion 11.
In some specific embodiments, the cooling medium is liquid nitrogen or liquid helium.
In some embodiments, the N rotation portions 12 are movably connected in sequence, and the ion implantation apparatus further includes a rotation control portion, where the rotation control portion controls the N rotation portions 12 to rotate.
In some embodiments, the rotation control portion controls at least one rotation portion 12 to rotate, so as to drive the carrying portion 11 to rotate.
In some embodiments, the rotation control portion controls rotation of the mth to nth rotation portions 12 to 12. Wherein M is a positive integer greater than 0 and less than N.
In some embodiments, referring to fig. 1, each of the rotating parts 12 includes a rotating table 121 and a transmission member 122 disposed on the rotating table 121. In the process of controlling the leftmost first rotating part 12 to rotate around the axial direction thereof, namely, the direction a shown in fig. 1, by the rotation control part (not labeled in the drawing), the transmission member 122 of the first rotating part 12 can drive the rest N-1 rotating parts 12 and the carrying part 11 to synchronously rotate, which is beneficial to realizing the large-angle rotation of the carrying part 11.
In some embodiments, the rotation control part controls different rotation parts 12 to have different preset rotation angles. The preset rotation angle herein refers to an angle that each of the rotating parts 12 can rotate with respect to the initial rest state.
In some embodiments, referring to fig. 1, from the rotating portion 12 farthest from the carrying portion 11, in a direction pointing to the carrying portion 11, each rotating portion 12 is controlled by the rotation control portion to sequentially increase with respect to a preset rotation angle in a self-resting state.
In some specific embodiments, a stepper motor is disposed in each of the rotating units 12, and each stepper motor is communicatively connected to the rotation control unit and controls the rotation through the rotation control unit.
In some specific embodiments, the rotation control portion is an upper computer.
In some embodiments, each of the rotating portions 12 is coaxial.
In some embodiments, referring to fig. 1, the temperature control pipe 13 penetrates each of the rotating parts 12 and extends in a spiral shape toward the carrying part 11. The carrying portion 11 includes a carrying surface 111 for carrying a substrate, and a connection surface 112 opposite to the carrying surface 111, and the temperature control pipeline 13 is disposed on the connection surface 112, so as to control the temperature of the substrate carried by the carrying surface 111.
Compared with the technical solution in which the temperature control pipeline 13 is directly connected to the carrying portion 11, the solution shown in fig. 1 avoids the risk that the temperature control pipeline 13 is easy to crack and leak due to the overlarge angle of the single rotation of the carrying portion 11.
In some embodiments, referring to fig. 1, the temperature control pipeline 13 extends from the connection surface 112 to be laid and fixed in the carrying portion 11.
In some embodiments, the temperature control pipe 13 is movably disposed on each of the rotating parts 12. Specifically, a through hole is formed at a position of each rotating table 121 near the edge, and the temperature control pipeline 13 penetrates through the through hole and is spirally wound.
Fig. 2 is a schematic structural diagram of a second ion implantation apparatus according to an embodiment of the present invention.
Referring to fig. 1 and 2, the ion implantation apparatus shown in fig. 2 is different from the ion implantation apparatus shown in fig. 1 in that: the temperature control pipeline 13 is fixedly arranged on each rotating part 12. Specifically, each rotating portion 12 is provided with a connecting pipe 21, two open ends of the connecting pipe 21 are communicated with the temperature control pipelines 13 located on two sides of the same rotating portion 12, and mutual interference influence of different sections of the temperature control pipelines 13 between adjacent rotating portions 12 is reduced.
Specifically, the temperature control pipelines 13 located between the adjacent rotating parts 12 are spirally wound, and the length of the temperature control pipelines 12 can be reasonably designed according to the limit position where each rotating part 12 in the adjacent rotating parts 12 can rotate, so that the risk that the temperature control pipelines 13 are cracked and liquid leakage is caused even if any one rotating part 12 in the adjacent rotating parts 12 rotates to the limit position is met.
In some embodiments, each of the rotating parts 12 is provided with a through hole, and the temperature control pipeline 13 penetrates through and is fixed to the through hole, so as to be fixedly arranged on each of the rotating parts 12.
Fig. 3 is a schematic structural diagram of a third ion implantation apparatus according to an embodiment of the present invention.
Referring to fig. 1 and 3, the ion implantation apparatus shown in fig. 3 is different from the ion implantation apparatus shown in fig. 1 in that: the temperature control pipeline 13 extends towards the carrying part 11 in a spiral manner and is arranged at each rotating part 12 and after the carrying part 11, and further extends away from the carrying part 11 in a spiral manner from the carrying part 11 and is arranged at each rotating part 12, so that a temperature control medium is convenient to circulate in the temperature control pipeline 13, and the temperature control effect is enhanced.
In some embodiments, referring to fig. 1 and 3, the temperature control pipeline 13 extends from a portion of the connecting surface 112 near one side edge into the carrying portion 11, is led out from a portion of the connecting surface 112 near the other side edge, extends away from the carrying portion 11 in a spiral shape, and is disposed on each of the rotating portions 12.
In some embodiments, referring to fig. 1 and 3, the temperature control pipe 13 has a double spiral shape, so as to further reduce the influence of rotation on the twisting deformation of the temperature control pipe 13.
In some embodiments, the number of the temperature control pipes 13 is at least 2 to enhance the temperature control effect.
Fig. 4 is a schematic structural diagram of a fourth ion implantation apparatus according to an embodiment of the present invention.
Referring to fig. 1 and 4, the ion implantation apparatus shown in fig. 4 is different from the ion implantation apparatus shown in fig. 1 in that: the ion implantation device shown in fig. 4 further includes a body portion 41 and an open cavity 42 disposed in the body portion 41, N rotating portions 12 are disposed in the open cavity 42, the carrying portion 11 is disposed on a surface of one side of the body portion 41 and is movably connected with the nth rotating portion 12 closest to the carrying portion 11, and the temperature control pipeline 13 is introduced from an open end of the open cavity 42, so as to ensure an effect of a temperature control medium and facilitate an integrated design of the device.
In some embodiments, the open end of the open cavity 421 is annular.
Fig. 5 is a schematic structural diagram of a fifth ion implantation apparatus according to an embodiment of the present invention.
In some embodiments, the ion implantation apparatus further comprises an insulating cavity at an end of the open cavity 42. Referring to fig. 4 and 5, the ion implantation apparatus shown in fig. 5 further includes an insulating cavity 51, the body 41 includes a distal body 52 away from the carrying portion 11, the insulating cavity 51 is disposed in the distal body 52, and the opening cavity 42 is disposed around the insulating cavity 51, so as to enhance the temperature control effect of Wen Kongjie in the temperature control pipeline 13 on the substrate carried by the carrying portion 11.
In some embodiments, the insulating cavity 51 is a closed cavity.
In some embodiments, the insulating cavity 51 is a vacuum cavity.
Fig. 6 is a schematic structural diagram of a sixth ion implantation apparatus according to an embodiment of the present invention.
Referring to fig. 5 and 6, the ion implantation apparatus shown in fig. 6 is different from the ion implantation apparatus shown in fig. 5 in that: the ion implantation apparatus shown in fig. 6 further includes at least one cooling portion 61 disposed on the body 41, and at least one cooling portion 61 is disposed between the open cavity 42 and the carrying portion 11 to enhance the cooling effect on the substrate carried by the carrying portion 11. Specifically, the body 41 includes a body carrier plate 62 provided with the carrying portion 11, and at least one refrigeration portion 61 is disposed in the body carrier plate 62 and is close to the carrying portion 11.
In some embodiments, the refrigeration portion 61 comprises a semiconductor refrigerator (Thermo Electric Cooler, TEC). Specifically, the heating end of the semiconductor refrigerator faces to the side where the temperature control pipeline 13 is located, and the temperature of the semiconductor refrigerator is reduced by the refrigerating medium in the temperature control pipeline 13; the refrigerating end of the semiconductor refrigerator faces the carrying part 11 so as to quickly cool the substrate carried by the carrying part 11.
The control method of the ion implantation device of the embodiment of the invention comprises the following steps: and controlling at least one rotating part to rotate through the rotation control part so as to drive the carrying part to rotate.
In some embodiments, the step of controlling the rotation of at least one of the rotating parts by the rotation control part includes: the rotation control part controls the N rotation parts 12 to rotate sequentially, so that the mth rotation part 12 to the nth rotation part 12 rotate together with the carrying part 11, M is a positive integer greater than 0 and less than N, and N is a positive integer greater than 1.
In some embodiments, under the control of the rotation control part, when the mth rotation part 12 rotates, the (m+1) th rotation parts 12 to N-th rotation parts 12 and the carrying part 11 synchronously rotate.
In some embodiments, the step of sequentially controlling the rotation of each of the rotating parts 12 by the rotation control part includes sequentially increasing the preset rotation angle by which each of the rotating parts 12 is sequentially controlled to rotate by the rotation control part.
In some embodiments, referring to fig. 1, with the positions of all the rotating portions 12 and the carrying portion 11 in the stationary state as initial positions, the first rotating portion 12, the second rotating portion 12, the third rotating portion 12 and the fourth rotating portion 12 from the leftmost position are sequentially controlled to rotate around the a direction by a first angle, a second angle, a third angle and a fourth angle respectively by a rotation control portion (not labeled in the figure) relative to the initial positions, so as to drive the angle values of the carrying portion 11 rotating around the a direction relative to the initial positions to be the sum of the first angle, the second angle, the third angle and the fourth angle.
Specifically, the rotation control part (not shown) controls the rotation of the first rotation part 12 and simultaneously drives the second to fourth rotation parts 12 and the carrying part 11 to synchronously rotate, controls the rotation of the second rotation part 12 and simultaneously drives the third and fourth rotation parts 12 and the carrying part 11 to synchronously rotate, controls the rotation of the third rotation part 12 and simultaneously drives the fourth rotation part 12 and the carrying part 11 to synchronously rotate, and controls the rotation of the fourth rotation part 12 and simultaneously drives the carrying part 11 to synchronously rotate.
In some specific embodiments, the rotation control portion (not shown) controls the first rotation portion 12 from the leftmost side to rotate 90 degrees, and the adjacent rotation portions 12 rotate by 90 degrees relatively, so that the first rotation portion 12 from the leftmost side, the second rotation portion 12, the third rotation portion 12 and the fourth rotation portion 12 rotate by 90 degrees, 180 degrees, 270 degrees and 360 degrees respectively around the initial position rotation in the a direction, thereby driving the carrying portion 11 to rotate by 360 degrees.
In some embodiments, the 1 st to M-1 st rotation parts 12 to 12 are in a stationary state relative to the carrying part 11 or the movement range is negligible in the process of controlling the M-th rotation part 12 to drive the m+1-th rotation parts 12 to 12 and the carrying part 11 to synchronously rotate.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (9)
1. An ion implantation apparatus, comprising:
a carrying part;
the N rotating parts are sequentially and movably connected, the Nth rotating part is movably connected with the carrying part, and N is a positive integer greater than 1;
the rotation control part is in communication connection with the N rotation parts and controls at least one rotation part to rotate so as to drive the carrying part to rotate;
the temperature control pipeline extends towards the carrying part in a spiral mode and is arranged on each rotating part and the carrying part, and the temperature control pipeline penetrates through each rotating part or is fixedly arranged on each rotating part.
2. The ion implantation system of claim 1, wherein the temperature control line further extends from the loading portion in a spiral away from the loading portion and is disposed at each of the rotating portions.
3. The ion implantation system of claim 2, wherein the temperature control line is double-helical.
4. The ion implantation system of claim 1, wherein the number of temperature control lines is at least 2.
5. The ion implantation system of claim 1, further comprising a body portion and an open cavity disposed in the body portion, wherein the N rotating portions are disposed in the open cavity, the carrying portion is disposed on a side surface of the body portion and is movably connected to the nth rotating portion, and the temperature control pipeline is introduced from an open end of the open cavity.
6. The ion implantation system of claim 5, further comprising an insulating cavity at an end of said open cavity.
7. The ion implantation system of claim 5, further comprising at least one cooling portion disposed in the body portion, the at least one cooling portion being located between the open cavity and the load portion.
8. A method for controlling an ion implantation apparatus, comprising:
the ion implantation device comprises a carrying part, a rotation control part, N rotation parts and a temperature control pipeline, wherein the N rotation parts are sequentially and movably connected, the Nth rotation part is movably connected with the carrying part, the temperature control pipeline extends spirally towards the carrying part and penetrates through each rotation part or is fixedly arranged at each rotation part and is arranged at the bottom of the carrying part, and N is a positive integer greater than 1;
and controlling at least one rotating part to rotate through the rotation control part so as to drive the carrying part to rotate.
9. The method according to claim 8, wherein the step of controlling rotation of at least one of the rotating portions by the rotation control portion comprises:
the N rotating parts are controlled to sequentially rotate through the rotating control part, when the Mth rotating part rotates, the Mth+1th rotating part to the Nth rotating part and the carrying part synchronously rotate, and M is a positive integer which is more than 0 and less than N.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111659993.XA CN114284125B (en) | 2021-12-30 | 2021-12-30 | Ion implantation apparatus and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111659993.XA CN114284125B (en) | 2021-12-30 | 2021-12-30 | Ion implantation apparatus and control method thereof |
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| Publication Number | Publication Date |
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| CN114284125A CN114284125A (en) | 2022-04-05 |
| CN114284125B true CN114284125B (en) | 2024-01-16 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015196399A1 (en) * | 2014-06-26 | 2015-12-30 | 上海凯世通半导体有限公司 | Ion implantation device |
| CN205784037U (en) * | 2016-05-17 | 2016-12-07 | 江苏迈威科技有限公司 | A kind of negative pressure liquid nitrogen subcooler device |
| CN110438474A (en) * | 2019-09-20 | 2019-11-12 | 理想晶延半导体设备（上海）有限公司 | Slide glass unit |
| KR102078243B1 (en) * | 2019-09-27 | 2020-02-17 | 주식회사 드림테크 | System for evaporative cooler |
| CN212472299U (en) * | 2020-05-15 | 2021-02-05 | 苏州统益自动化机械制造有限公司 | Pipeline structure of mold temperature controller |
-
2021
- 2021-12-30 CN CN202111659993.XA patent/CN114284125B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015196399A1 (en) * | 2014-06-26 | 2015-12-30 | 上海凯世通半导体有限公司 | Ion implantation device |
| CN205784037U (en) * | 2016-05-17 | 2016-12-07 | 江苏迈威科技有限公司 | A kind of negative pressure liquid nitrogen subcooler device |
| CN110438474A (en) * | 2019-09-20 | 2019-11-12 | 理想晶延半导体设备（上海）有限公司 | Slide glass unit |
| KR102078243B1 (en) * | 2019-09-27 | 2020-02-17 | 주식회사 드림테크 | System for evaporative cooler |
| CN212472299U (en) * | 2020-05-15 | 2021-02-05 | 苏州统益自动化机械制造有限公司 | Pipeline structure of mold temperature controller |
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| Publication number | Publication date |
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| CN114284125A (en) | 2022-04-05 |
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