CN110431839B - 用于图像传感器的读取结构、图像传感器系统和用于读取图像传感器的方法 - Google Patents

用于图像传感器的读取结构、图像传感器系统和用于读取图像传感器的方法 Download PDF

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CN110431839B
CN110431839B CN201880019211.6A CN201880019211A CN110431839B CN 110431839 B CN110431839 B CN 110431839B CN 201880019211 A CN201880019211 A CN 201880019211A CN 110431839 B CN110431839 B CN 110431839B
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analog
image sensor
memory
stored
image
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CN110431839A (zh
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延斯·多伊格
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/445—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by skipping some contiguous pixels within the read portion of the array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)
CN201880019211.6A 2017-01-18 2018-01-18 用于图像传感器的读取结构、图像传感器系统和用于读取图像传感器的方法 Active CN110431839B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP17152077.8 2017-01-18
EP17152077 2017-01-18
EP17152299 2017-01-19
EP17152299.8 2017-01-19
PCT/EP2018/051231 WO2018134317A1 (de) 2017-01-18 2018-01-18 Ausleseanordnung für einen bildsensor, bildsensor-system und verfahren zum auslesen eines bildsensors

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CN110431839A CN110431839A (zh) 2019-11-08
CN110431839B true CN110431839B (zh) 2022-07-05

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US (1) US11115613B2 (enExample)
EP (2) EP3571836B1 (enExample)
JP (1) JP7113830B2 (enExample)
KR (1) KR102310054B1 (enExample)
CN (1) CN110431839B (enExample)
WO (1) WO2018134317A1 (enExample)

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US20230229450A1 (en) * 2018-02-23 2023-07-20 Untether Ai Corporation Computational memory
WO2019175734A1 (en) * 2018-03-14 2019-09-19 Insightness Ag Event-based vision sensor with direct memory control
JP2020030873A (ja) * 2018-08-21 2020-02-27 キオクシア株式会社 メモリシステム
US10638075B1 (en) * 2019-05-17 2020-04-28 Omnivision Technologies, Inc. Counter design with various widths for image sensor
JP7322552B2 (ja) * 2019-07-01 2023-08-08 株式会社リコー 光電変換装置、ラインセンサ、画像読取装置、及び画像形成装置
CN111464764B (zh) * 2020-03-02 2022-10-14 上海集成电路研发中心有限公司 一种基于忆阻器的图像传感器及其进行卷积运算的方法
US11303838B2 (en) * 2020-05-07 2022-04-12 Shenzhen GOODIX Technology Co., Ltd. Using pixel readout reordering to reduce pattern noise in image sensor
JP7583562B2 (ja) * 2020-09-11 2024-11-14 キヤノン株式会社 光電変換装置及び撮像システム
CN115318682A (zh) * 2022-08-01 2022-11-11 泉州市汉威机械制造有限公司 一种次品分类剔除控制方式
CN118839603B (zh) * 2024-07-04 2025-02-28 中国船舶集团有限公司第七一九研究所 一种多次冲击下复合材料结构风险评估方法及装置

Citations (1)

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CN205647747U (zh) * 2015-05-29 2016-10-12 半导体元件工业有限责任公司 图像传感器和图像传感器系统

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JP3846572B2 (ja) 2001-09-20 2006-11-15 ソニー株式会社 固体撮像装置
GB2438693B (en) * 2005-03-30 2009-07-08 Micron Technology Inc High density row ram for column parallel CMOS image sensors
KR102009165B1 (ko) * 2013-01-24 2019-10-21 삼성전자 주식회사 이미지 센서, 멀티 칩 패키지, 및 전자 장치
US9453730B2 (en) 2013-03-20 2016-09-27 Cognex Corporation Machine vision 3D line scan image acquisition and processing
FR3010603A1 (fr) * 2013-09-10 2015-03-13 Commissariat Energie Atomique Dispositif d'acquisition compressive d'une image
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Publication number Publication date
US20190342513A1 (en) 2019-11-07
WO2018134317A1 (de) 2018-07-26
JP7113830B2 (ja) 2022-08-05
EP3571836B1 (de) 2023-09-27
KR20190107111A (ko) 2019-09-18
CN110431839A (zh) 2019-11-08
KR102310054B1 (ko) 2021-10-08
EP4283983A3 (de) 2024-02-21
JP2020507957A (ja) 2020-03-12
EP3571836A1 (de) 2019-11-27
US11115613B2 (en) 2021-09-07
EP4283983A2 (de) 2023-11-29

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