CN110429095A - A kind of gazing type multispectral imaging device and preparation method thereof - Google Patents
A kind of gazing type multispectral imaging device and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to photoelectric imaging technology field, in particular to a kind of gazing type multispectral imaging device and preparation method thereof, the device includes back side illumination image sensor chip, and back side illumination image sensor chip surface is provided with Fabry-Perot filter；Fabry-Perot filter is made of lower reflecting mirror, super surface nano-structure Fabry-Perot-type cavity and upper reflector；Wherein back side illumination image sensor chip includes multispectral imaging chip photosensitive area, and each multispectral imaging chip photosensitive area includes multiple simple spectrum section pixels；By being equally spaced the super surface nano-structure of the spectral coverage in super surface nano-structure Fabry-Perot-type cavity and constituting in the pixel photosensitive area that back side illumination image sensor chip interior is provided with the spectral coverage, the pixel photosensitive area of each spectral coverage is located at immediately below the super surface nano-structure of the spectral coverage each simple spectrum section pixel；The present invention is suitble to unmanned plane, portable optical spectrum imagers, small/micro-/Nano satellite load etc. to have higher requirements the multispectral imaging application of platform weight, volume.
Description
Technical field
The present invention relates to photoelectric imaging technology field, in particular to a kind of gazing type multispectral imaging device and its preparation side
Method.
Background technique
Multispectral imaging combines imaging technique and spectrographic detection technology, realizes object space information and spectrum " fingerprint "
It is synchronous obtain, target identification with super strength and anti-interference ability can be widely applied to resource detection, environmental monitoring, map
The fields such as mapping, food safety, artificial intelligence, early warning and reconnaissance, camouflage identification.With the development of technology, unmanned plane, portable light
It composes the application platforms such as imager, small/micro-/Nano satellite and requires multi-optical spectrum imaging system, multi-optical spectrum imaging system is progressively towards small-sized
Change, is integrated, inexpensive direction is developed.
The different optical filtering type multi-optical spectrum imaging systems of table 1 compare
Multispectral imaging imaging sensor versus grayscale image sensor, photodetector unit is essentially identical,
What the realization of light spectrum image-forming function was mainly realized by the light splitting filtering functions of the optical filter of imaging sensor.Not according to principle
Together, traditional multi-optical spectrum imaging system light splitting optical filtering technique can be divided mainly into: prism grating dispersion light splitting, interference light splitting, acousto-optic tune
Humorous light splitting, medium optical filtering light splitting etc., advantage and disadvantage are as shown in table 1.
It can be seen that the optical front-end (light splitting filter system) of traditional multi-optical spectrum imaging system or because heavier-weight,
Volume is larger, or because the reasons such as optical filtering wave band number is less, temporal resolution is poor, spectra overlap is big, are difficult to meet portable
The platforms such as optical spectrum imagers, unmanned plane, micro-nano satellite are to spectrum imaging system miniaturization, integrated, inexpensive application requirement.
Summary of the invention
In order to meet the platforms such as portable optical spectrum imagers, unmanned plane, micro-nano satellite to spectrum imaging system miniaturization, collection
The application requirement of Cheng Hua, low cost, the present invention propose a kind of gazing type multispectral imaging device, including back side illumination image sensor
Chip 1 is once provided with lower reflecting mirror 2, super surface nano-structure method cloth in back side illumination image sensor chip 1 from the bottom up
In-Perot cavity 3 and upper reflector 4；Wherein back side illumination image sensor chip 1 includes multispectral imaging chip photosensitive area, often
A multispectral imaging chip photosensitive area includes multiple simple spectrum section pixels；Each simple spectrum section pixel is by super surface nano-structure method cloth
In-Perot cavity 3 is equally spaced the super surface nano-structure of the spectral coverage and sets inside back side illumination image sensor chip 1
The pixel photosensitive area for being equipped with the spectral coverage is constituted, under the pixel photosensitive area of each spectral coverage is located at the super surface nano-structure of the spectral coverage just
Side.
Further, multispectral imaging chip photosensitive area includes the array that n × m simple spectrum section pixel is formed, the first behavior
The simple spectrum section pixel of the 1~n wave band, second is classified as the simple spectrum section pixel of (n+1)th~2n wave band ..., m behavior n
(m-1) the simple spectrum section pixel of+1~mn wave band；Wherein multispectral imaging chip entirety tuning band range be 300nm~
1100nm, 3~50nm of simple spectrum section pixel half-peak breadth.
Further, super surface nano-structure includes super surface nano-structure basic material 7, in super surface nano-structure base
Nano-pore is regularly set on plinth material 7, and fills super surface nano-structure packing material 8 in the air in nanometer, and super surface is received
Rice structure basis material 7 and super surface nano-structure packing material 8 are used using high-index material collocation low-index material,
Even super surface nano-structure basic material 7 is that then super surface nano-structure packing material 8 is low-refraction to high-index material
Material；Super surface nano-structure packing material 8 is high refraction if being low-index material if super surface nano-structure basic material 7
Rate material.
Further, the depth one of the diameter of the nano-pore of the super surface nano-structure of different different-wavebands and nano-pore
It causes, then the passband wavelength of a wave band indicates are as follows:
Wherein, λ is the passband center wavelengths of a wave band；D is the thickness of super surface nano-structure Fabry-Perot-type cavity；n
For the equivalent refractive index of super surface nano-structure；For super surface nano-structure basic material reflection phase shift,It is received for super surface
Rice structural filler material reflection phase shift；K is arbitrary integer.
Further, super surface nano-structure basic material 7 and super surface nano-structure packing material 8 use SiO2、
MgF2、Si3N4、Nb2O5、TiO2Or Al2O3。
Further, lower reflecting mirror 2 and upper reflector 4 use Prague (Bragg) all-dielectric multilayer-film pile structure.
Further, lower reflecting mirror 2 and upper reflector 4 use the dielectric material of high transmittance, including SiO2、MgF2、
Si3N4、Nb2O5、TiO2Or Al2O3。
Further, the back side illumination image sensor chip 1 is charge-coupled device or contact-sensing device.
The present invention also proposes a kind of preparation method of gazing type multispectral imaging device, specifically includes the following steps:
S1, preparation back-illuminated imaging sensor 1, when preparation, 1 back side of back-illuminated imaging sensor need to make back side pixel to quasi-optical
Alignment mark needed for carving；
S2, using ion beam assisted deposition technique, carry out multilayered medium material shallow lake in the entering light face of back-illuminated imaging sensor
Product prepares lower reflecting mirror 2；
S3, using ion beam assisted deposition technique, in the lower super surface nano-structure basic material 7 of 2 surface deposition of reflecting mirror；
S4, it is made by lithography multispectral at super 7 surface pixel original position of surface nano-structure basic material using photoetching process
It filters and uses super surface nano-structure array mask pattern；
S5, mask pattern is transferred on super surface nano-structure basic material 7 using etching technics, forms super surface and receives
Metre hole hole；
S6, using atomic layer deposition processes, super surface nano-structure packing material 8 is filled into super nano surface hole
In, adjust the equivalent refractive index of super surface nano-structure Fabry-Perot-type cavity.
S7, device surface is polished using CMP process, completes the production of super surface nano-structure Fabry-Perot-type cavity 3；
S8, using ion beam assisted deposition technique, carry out multilayer on super 3 surface of surface nano-structure Fabry-Perot-type cavity
Dielectric material deposit, prepares upper reflector 4；
S9, pressure welding point contact hole is etched using photoetching process；
S10, the optical filter using in etching technics removal pressure welding point, silicon, imaging sensor front medium, will contact electrode
Hole exposes, and formation is electrically connected contact point, completes gazing type multispectral imaging element manufacturing.
The present invention integrates multi-spectrum filter device, tool in each pixel surface in situ of back-illuminated imaging sensor (CCD or CIS) chip
Have more harmonic wave section small in size, light-weight, adjustable, high reliablity, with silicon technology good compatibility, optical crosstalk is small, can be achieved it is more/
It the advantages that height/ultraphotic spectrum staring imaging, is very suitable to unmanned plane, portable optical spectrum imagers, small/micro-/Nano satellite load, leads
The light spectrum image-forming application for the platform that bullet, individual equipment etc. have higher requirements to weight, volume.
Detailed description of the invention
Fig. 1 is a kind of gazing type multispectral imaging device chip structure of the present invention；
Fig. 2 is the structure schematic top plan view of the super surface nano-structure of the present invention；
Fig. 3 is multispectral imaging chip pixel distribution schematic diagram of the present invention；
Wherein, 1, back side illumination image sensor chip；2, lower reflecting mirror；3, super surface nano-structure Fabry-Perot
(Fabry-Perot, abbreviation F-P) chamber；4, upper reflector；The pixel photosensitive area of 5-1~5-n, the 1~n wave band；6-1~6-
N, the super surface nano-structure of the 1~n wave band；6-1-m~6-n-m, the 1~n wave of m row in multispectral pixel structure
The super surface nano-structure of section；7, super surface nano-structure basic material；8, super surface nano-structure packing material；9, back-illuminated type
Image sensor chip entering light surface；10, multispectral imaging chip photosensitive area；11, multispectral imaging device pressure welding point.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The optical front-end (light splitting filter system) or larger because of heavier-weight, volume of traditional multi-optical spectrum imaging system
(prism grating color dispersion-type, interference-type, acousto-optic modulation type), or because optical filtering wave band number less (dielectric filter type), time point
The reasons such as resolution poor (prism grating color dispersion-type, interference-type, acousto-optic modulation type), spectra overlap big (dielectric filter type), very
Difficulty meet the platforms such as portable optical spectrum imagers, unmanned plane, micro-nano satellite to spectrum imaging system miniaturization, it is integrated, low at
This application requirement, therefore, the present invention propose a kind of gazing type multispectral imaging device, such as Fig. 1, including back side illumination image sensing
Device chip 1 is once provided with lower reflecting mirror 2, super surface nano-structure F-P in back side illumination image sensor chip 1 from the bottom up
Chamber 3 and upper reflector 4；Wherein back side illumination image sensor chip 1 includes the multispectral imaging chip photosensitive area of multiple n × m,
The multispectral imaging chip photosensitive area of each n × m includes the simple spectrum section pixel of multiple and different spectral coverages；Each simple spectrum section pixel by
Super surface nano-structure Fabry-Perot-type cavity 3 is equally spaced the super surface nano-structure of the spectral coverage and in back-illuminated type figure
As sensor chip 1 is internally provided with the pixel photosensitive area of the spectral coverage, the pixel photosensitive area of each spectral coverage is located at the super of the spectral coverage
Immediately below surface nano-structure, the pixel photosensitive area 5- of the pixel photosensitive area 5-1 of the 1st wave band as shown in figure 1, the 2nd wave band
2 ..., n-th of wave band pixel photosensitive area 5-n, it is photosensitive to be provided with pixel immediately below the super surface nano-structure of each spectral coverage
Area；Lower reflecting mirror, super surface nano-structure F-P cavity, upper reflector three-decker constitute Fabry-Perot (F-P) multispectral filter
Light device, each spectral coverage realized by adjusting super surface nano-structure F-P cavity optical thickness, have structure simply, film layer number it is less
Advantage.
Such as Fig. 3, back side illumination image sensor chip entering light surface 9 is provided with multiple multispectral imaging chips photosensitive area 10,
Multispectral imaging chip photosensitive area 10 includes the array that n × m simple spectrum section pixel is formed, the list of first the 1~n wave band of behavior
Spectral coverage pixel, second is classified as the simple spectrum section pixel of (n+1)th~2n wave band ..., m behavior n (m-1)+1~mn wave band
Simple spectrum section pixel, in figure in the multispectral imaging chip photosensitive area of n × m, the super nano surface of the 1st wave band of the first behavior
The super surface nano-structure 6-n of the wave band of structure 6-1~n-th；Super surface nano-structure 6-1-m~the of the 1st wave band of m row
The super surface nano-structure 6-n-m of n-th of wave band of m row amounts to n × m simple spectrum segment unit.
Further, the back side illumination image sensor chip 1 is charge-coupled device (Charge Coupled
Device, CCD) or cmos image sensor (CMOS Image Sensor, CIS)；One side back side illumination image sensor
CCD or CIS is as multispectral imaging base chip, with high sensitivity, the spy that membrane system designability is high, process controllability is high
Point；Each pixel surface in situ of another aspect back side illumination image sensor chip (back side) integrates multi-spectrum filter device array, realizes
Multispectral staring imaging.
Further, lower reflecting mirror 2 and upper reflector 4 use Prague (bragg) all-dielectric multilayer-film pile structure, have
The high advantage of peak transmittance.
Further, such as Fig. 2, super surface nano-structure includes super surface nano-structure basic material 7, in super nano surface
Nano-pore is regularly set on structure basis material 7, and fills super surface nano-structure packing material 8 in the air in nanometer, and super
Surface nano-structure basic material 7 and super surface nano-structure packing material 8 are using high-index material collocation low-refraction material
Material uses, and even super surface nano-structure basic material 7 is that then super surface nano-structure packing material 8 is low to high-index material
Refraction materials；Super surface nano-structure packing material 8 is if being low-index material if super surface nano-structure basic material 7
High-index material.
The diameter of the nano-pore of the super surface nano-structure of each different-waveband is consistent with the depth of nano-pore, then a wave
The passband wavelength of section indicates are as follows:
Wherein, λ is the passband wavelength of a wave band；D is the thickness of super surface nano-structure Fabry-Perot-type cavity；K is whole
Number；M is intermediate parameters；N is the equivalent refractive index of super surface nano-structure, by super surface nano-structure basic material 7 and super table
Face nanostructure packing material 8 codetermines, and by adjusting the super surface equivalent refractive index n of nano aperture Auto-regulating System of Density of Heavy Medium, that is, adjusts
The ratio of super surface nano-structure basic material 7 and super 8 two kinds of materials of surface nano-structure packing material adjusts equivalent refraction
Rate, super surface nano-structure equivalent refractive index may be expressed as:
nTE=[(1-f) * n1 2+f*n2 2]1/2
nTM=[(1-f)/n1 2+f/n2 2]-1/2
Wherein, nTE、nTMRespectively indicate the equivalent refractive index of TE wave, TM wave；n1、n2Respectively indicate super surface nano-structure base
The refractive index of plinth material 7 and super 8 two media of surface nano-structure packing material, f are super surface nano-structure fill factor
Ratio, after determining material, the refractive index of sub-wave length grating is only determined by fill factor.
Further, super surface nano-structure basic material 7 and super surface nano-structure packing material 8 use SiO2、
MgF2、Si3N4、Nb2O5、TiO2Or Al2O3Material.
Further, lower reflecting mirror 2 and upper reflector 4 use the dielectric material of high transmittance, including SiO2、MgF2、
Si3N4、Nb2O5、TiO2Or Al2O3Material.
Compared with prior art, present invention light splitting is filtered using pixel surface dielectric film (F-P optical filter), is eliminated stupid
The dispersion of weight or interference device, the small in size, weight compared with prism grating color dispersion-type, interference-type, acousto-optic modulation type beam splitting system
Gently；
Optical filtering wave band of the present invention realizes that different optical thicknesses correspond to different passbands, with Jie using F-P cavity optical thickness is adjusted
Matter optical filter type beam splitting system is more compared to adjustable harmonic wave section；
F-P cavity of the present invention uses the form of Solid Cavity, no high-frequency vibration, the high reliablity compared with MEMS type beam splitting system；
SiO2, Si3N4, TiO2 etc. can be used in dielectric film of the invention, with silicon technology good compatibility；
Optical filter of the invention is directly fitted with image sensor, no extra spectra crosstalk, with dielectric filter type
Beam splitting system is compared and reduces spectra overlap；
Multispectral staring imaging can be achieved in the present invention, and a point space can be used and realize multispectral section of staring imaging, frame frequency is high, avoids
That there may be signal-to-noise ratio in mobile object image blur, high-speed applications is low for sweep type imaging spectrometer, detection result delay is existing
As the problems such as serious；
Hyper spectral Imaging can also can be achieved in the present invention, and optical filter on piece is integrated, and it is real that modern semiconductor technology can be used
The filter array production of existing Pixel-level, the light splitting that Pixel-level also can be thus achieved filter, to make the spectrum that micro-system is imaged
It can extend to the scale of pixel number, it can be achieved that Hyper spectral Imaging with number.
Based on above-mentioned advantage, the present invention is very suitable to unmanned plane, portable optical spectrum imagers, small/micro-/Nano satellite load etc.
It has higher requirements the multispectral imaging application of platform to weight, volume.
The present invention also proposes a kind of preparation method of gazing type multispectral imaging device, specifically includes the following steps:
S1, preparation back-illuminated imaging sensor 1；When preparation, 1 back side of back-illuminated imaging sensor need to make back side pixel to quasi-optical
Alignment mark needed for carving, optical filter of the label for subsequent technique production can be aligned with the photosensitive area of front pixel；
S2, using ion beam assisted deposition technique, carry out multilayered medium material shallow lake in the entering light face of back-illuminated imaging sensor
Product prepares lower reflecting mirror 2；
S3, using ion beam assisted deposition technique, in the lower super surface nano-structure basic material 7 of 2 surface deposition of reflecting mirror；
S4, it is made by lithography multispectral at super 7 surface pixel original position of surface nano-structure basic material using photoetching process
It filters and uses super surface nano-structure array mask pattern；
S5, mask pattern is transferred on super surface nano-structure basic material 7 using etching technics, forms super surface and receives
Metre hole hole；
S6, using atomic layer deposition processes, super surface nano-structure packing material 8 is filled into super nano surface hole
In, adjust Fabry-Perot-type cavity equivalent refractive index.
S7, device surface is polished using CMP process, completes the production of super surface nano-structure Fabry-Perot-type cavity 3；
S8, using ion beam assisted deposition technique, carry out multilayer on super 3 surface of surface nano-structure Fabry-Perot-type cavity
Dielectric material deposit, prepares upper reflector 4；
S9, pressure welding point contact hole is etched using photoetching process；
S10, the optical filter using in etching technics removal pressure welding point, silicon, imaging sensor front medium, will contact electrode
Hole exposes, and formation is electrically connected contact point, i.e. multispectral imaging device pressure welding point 11 in Fig. 3, completes gazing type mostly light
Compose image device production.
The multispectral imaging device ordered arrangement of above-mentioned preparation forms m × n spectral coverage multispectral imaging chip photosensitive area 9, m
× n spectral coverage multispectral imaging chip photosensitive area 9 includes the single multispectral unit 10 of m × n wave band.
In the description of the present invention, it is to be understood that, term " coaxial ", " bottom ", " one end ", " top ", " middle part ",
The orientation or position of the instructions such as " other end ", "upper", " side ", " top ", "inner", "outside", " front ", " center ", " both ends "
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, without referring to
Show or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot manage
Solution is limitation of the present invention.
In the present invention unless specifically defined or limited otherwise, term " installation ", " setting ", " connection ", " fixation ",
Terms such as " rotations " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be with
It is mechanical connection, is also possible to be electrically connected；It can be directly connected, two can also be can be indirectly connected through an intermediary
The interaction relationship of connection or two elements inside a element, unless otherwise restricted clearly, for the common of this field
For technical staff, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (9)
1. a kind of gazing type multispectral imaging device, including back side illumination image sensor chip (1), which is characterized in that in back-illuminated
Formula image sensor chip (1) is once provided with lower reflecting mirror (2), super surface nano-structure Fabry-Perot-type cavity from the bottom up
(3) and upper reflector (4)；Wherein back side illumination image sensor chip (1) includes multiple multispectral imaging chips photosensitive area, often
A multispectral imaging chip photosensitive area includes the simple spectrum section pixel of n × m different spectral coverage；Each simple spectrum section pixel is by super surface
Nanostructure Fabry-Perot-type cavity (3) is equally spaced the super surface nano-structure of the spectral coverage and passes in back side illumination image
Sensor chip (1) is internally provided with the pixel photosensitive area of the spectral coverage, and the pixel photosensitive area of each spectral coverage is located at the super table of the spectral coverage
Immediately below the nanostructure of face.
2. a kind of gazing type multispectral imaging device according to claim 1, which is characterized in that multispectral imaging chip light
Quick area includes the array that n × m simple spectrum section pixel is formed, and the simple spectrum section pixel of the first wave band of behavior the 1~n, second is classified as
The simple spectrum section pixel of (n+1)th~2n wave band ..., the simple spectrum section pixel of m behavior n (m-1)+1~mn wave band；Wherein
Multispectral imaging chip entirety tuning band range is 300nm~1100nm, 3~50nm of simple spectrum section pixel half-peak breadth.
3. a kind of gazing type multispectral imaging device according to claim 1, which is characterized in that super surface nano-structure packet
Super surface nano-structure basic material (7) is included, nano-pore is regularly set on super surface nano-structure basic material (7), and
Super surface nano-structure packing material (8) is filled in the air in nanometer, and super surface nano-structure basic material (7) and super surface are received
Rice structural filler material (8) is used using high-index material collocation low-index material, even super surface nano-structure basis
Material (7) is that then super surface nano-structure packing material (8) is low-index material to high-index material；If super nano surface knot
Structure basic material (7) is that then super surface nano-structure packing material (8) is high-index material to low-index material.
4. a kind of gazing type multispectral imaging device according to claim 2, which is characterized in that different different-wavebands surpass
The diameter of the nano-pore of surface nano-structure and the depth of nano-pore are consistent, then the passband wavelength of a wave band indicates are as follows:
Wherein, λ is the passband center wavelengths of a wave band；D is the thickness of super surface nano-structure Fabry-Perot-type cavity；N is super
The equivalent refractive index of surface nano-structure；For super surface nano-structure basic material reflection phase shift,For super nano surface knot
Structure packing material reflection phase shift；K is arbitrary integer.
5. a kind of gazing type multispectral imaging device according to claim 2, which is characterized in that super surface nano-structure base
Plinth material (7) and super surface nano-structure packing material (8) use SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3Material.
6. a kind of gazing type multispectral imaging device according to claim 1, which is characterized in that lower reflecting mirror (2) and upper
Reflecting mirror (4) uses Prague all-dielectric multilayer-film pile structure.
7. a kind of gazing type multispectral imaging device according to claim 1, which is characterized in that lower reflecting mirror (2) and upper
Reflecting mirror (4) uses the dielectric material of high transmittance, including SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3Material.
8. a kind of gazing type multispectral imaging device according to claim 1, which is characterized in that the back side illumination image passes
Sensor chip (1) is charge-coupled device or cmos image sensor.
9. a kind of preparation method of gazing type multispectral imaging device, which is characterized in that specifically includes the following steps:
S1, preparation back-illuminated imaging sensor (1), when preparation, back-illuminated imaging sensor (1) back side need to make back side pixel to quasi-optical
Alignment mark needed for carving；
S2, it is made using ion beam assisted deposition technique in the progress multilayered medium material deposit of the entering light face of back-illuminated imaging sensor
Standby lower reflecting mirror (2)；
S3, using ion beam assisted deposition technique, in the super surface nano-structure basic material (7) of lower reflecting mirror (2) surface deposition；
S4, multispectral filter is made by lithography at super surface nano-structure basic material (7) surface pixel original position using photoetching process
The super surface nano-structure array mask pattern of light；
S5, mask pattern is transferred on super surface nano-structure basic material (7) using etching technics, forms super nano surface
Hole；
S6, using atomic layer deposition processes, super surface nano-structure packing material (8) is filled into super nano surface hole,
Adjust Fabry-Perot-type cavity equivalent refractive index.
S7, device surface is polished using CMP process, completes the production of super surface nano-structure Fabry-Perot-type cavity (3)；
S8, using ion beam assisted deposition technique, carry out multilayer Jie on super surface nano-structure Fabry-Perot-type cavity (3) surface
Material deposit, prepares upper reflector (4)；
S9, pressure welding point contact hole is etched using photoetching process；
S10, the optical filter using in etching technics removal pressure welding point, silicon, imaging sensor front medium, it is naked by electrode hole is contacted
Expose, formation is electrically connected contact point, completes gazing type multispectral imaging element manufacturing.
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