CN110429095B - Staring multispectral imaging device - Google Patents
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- H01L27/144—Devices controlled by radiation
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Abstract
The invention relates to the technical field of photoelectric imaging, in particular to a staring multispectral imaging device, which comprises a back-illuminated image sensor chip, wherein a Fabry-Perot filter is arranged on the surface of the back-illuminated image sensor chip; the Fabry-Perot filter consists of a lower reflector, a super-surface nano-structure Fabry-Perot cavity and an upper reflector; the back-illuminated image sensor chip comprises multispectral imaging chip photosensitive areas, wherein each multispectral imaging chip photosensitive area comprises a plurality of single-spectrum-segment pixels; each single spectral segment pixel consists of a super-surface nanostructure with the spectral segment equidistantly arranged in a super-surface nanostructure Fabry-Perot cavity and a pixel photosensitive area with the spectral segment arranged in the back-illuminated image sensor chip, and the pixel photosensitive area of each spectral segment is positioned right below the super-surface nanostructure of the spectral segment; the invention is suitable for multispectral imaging application of unmanned aerial vehicles, portable spectral imaging instruments, small/micro/nano satellite loads and other platforms with higher requirements on weight and volume.
Description
Technical Field
The invention relates to the technical field of photoelectric imaging, in particular to a staring type multispectral imaging device.
Background
Multispectral imaging combines an imaging technology and a spectrum detection technology, realizes synchronous acquisition of target space information and spectrum 'fingerprint', has super strong target identification and anti-interference capability, and can be widely applied to the fields of resource detection, environment monitoring, map mapping, food safety, artificial intelligence, early warning reconnaissance, camouflage identification and the like. With the development of technology, multispectral imaging systems are required for application platforms such as unmanned aerial vehicles, portable spectral imagers, small/micro/nano satellites and the like, and are gradually developed in the direction of miniaturization, integration and low cost.
TABLE 1 comparison of different filter types for multispectral imaging systems
The multispectral imaging image sensor is basically the same as the grayscale imaging image sensor in terms of photoelectric detector units, and the implementation of the spectral imaging function is mainly realized by the spectral filtering function of the optical filter of the image sensor. According to different principles, the traditional multispectral imaging system light splitting and filtering technology can be mainly divided into: the advantages and disadvantages of prism/grating dispersion spectroscopy, interference spectroscopy, acousto-optic tuning spectroscopy, dielectric filtering spectroscopy, etc. are shown in table 1.
Therefore, the optical front end (light splitting and filtering system) of the traditional multispectral imaging system is difficult to meet the application requirements of the platforms such as a portable spectral imager, an unmanned aerial vehicle and a micro-nano satellite on the miniaturization, integration and low cost of the spectral imaging system due to heavier weight and larger volume or due to fewer filtering bands, poorer time resolution, large spectral crosstalk and the like.
Disclosure of Invention
In order to meet the application requirements of platforms such as a portable spectral imager, an unmanned aerial vehicle and a micro-nano satellite on miniaturization, integration and low cost of a spectral imaging system, the invention provides a staring type multispectral imaging device, which comprises a back-illuminated image sensor chip 1, wherein a lower reflector 2, a super-surface nanostructure Fabry-Perot cavity 3 and an upper reflector 4 are arranged on the back-illuminated image sensor chip 1 from bottom to top; the back-illuminated image sensor chip 1 comprises multispectral imaging chip photosensitive areas, wherein each multispectral imaging chip photosensitive area comprises a plurality of single-spectrum-segment pixels; each single spectrum section pixel is composed of a super-surface nano structure with the spectrum section equidistantly arranged in the super-surface nano structure Fabry-Perot cavity 3 and a pixel photosensitive area with the spectrum section arranged in the back-illuminated image sensor chip 1, and the pixel photosensitive area of each spectrum section is positioned right below the super-surface nano structure of the spectrum section.
Furthermore, the multispectral imaging chip photosensitive area comprises an array formed by n multiplied by m single spectrum section pixels, the first action is a single spectrum section pixel of 1-n wave bands, the second action is a single spectrum section pixel of n + 1-2 n wave bands, and the mth action is a single spectrum section pixel of n (m-1) + 1-mn wave bands; the integral tuning wave band range of the multispectral imaging chip is 300-1100 nm, and the half-peak width of a single-spectrum pixel is 3-50 nm.
Further, the super-surface nanostructure comprises a super-surface nanostructure base material 7, nanopores are regularly arranged on the super-surface nanostructure base material 7, and a super-surface nanostructure filling material 8 is filled in the nano-pores, and the super-surface nanostructure base material 7 and the super-surface nanostructure filling material 8 are used by matching a high refractive index material with a low refractive index material, that is, if the super-surface nanostructure base material 7 is a high refractive index material, the super-surface nanostructure filling material 8 is a low refractive index material; if the super-surface nanostructure base material 7 is a low refractive index material then the super-surface nanostructure filler material 8 is a high refractive index material.
Further, the diameter of the nano-pores of the super-surface nano-structure of different wave bands is consistent with the depth of the nano-pores, and the pass band wavelength of one wave band is expressed as:
wherein, λ is the passband center wavelength of a band; d is the thickness of the Fabry-Perot cavity with the super-surface nano structure; n is the equivalent refractive index of the super-surface nanostructure;
for the reflection phase shift of the super-surface nano-structure base material,
filling the super surface nano structure with a material for reflection phase shift; k is any integer.
Further, the super-surface nano-structure base material 7 and the super-surface nano-structure filling material 8 are adoptedSiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3。
Further, the lower mirror 2 and the upper mirror 4 adopt a Bragg (Bragg) all-dielectric multilayer film stack structure.
Further, the lower reflector 2 and the upper reflector 4 are made of high-transmittance dielectric material, including SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3。
Further, the back-illuminated image sensor chip 1 is a charge coupled device or a contact sensor device.
The invention also provides a preparation method of the staring multispectral imaging device, which comprises the following steps:
s1, preparing the back-illuminated image sensor 1, wherein during preparation, an alignment mark required by back-side pixel alignment photoetching needs to be manufactured on the back side of the back-illuminated image sensor 1;
s2, adopting an ion beam assisted deposition process to deposit a plurality of layers of dielectric materials on the light inlet surface of the back-illuminated image sensor to prepare a lower reflector 2;
s3, depositing the super-surface nano-structure base material 7 on the surface of the lower reflector 2 by adopting an ion beam assisted deposition process;
s4, photoetching a mask pattern of the super-surface nano-structure array for multispectral light filtering at the surface pixel in-situ position of the super-surface nano-structure base material 7 by adopting a photoetching process;
s5, transferring the mask pattern to the super-surface nano-structure base material 7 by adopting an etching process to form super-surface nano holes;
and S6, filling the super-surface nano-structure filling material 8 into the super-surface nano-holes by adopting an atomic layer deposition process, and adjusting the equivalent refractive index of the super-surface nano-structure Fabry-Perot cavity.
S7, polishing the surface of the device by adopting a CMP process to finish the manufacture of the Fabry-Perot cavity 3 with the super-surface nano structure;
s8, carrying out multi-layer dielectric material deposition on the surface of the Fabry-Perot cavity 3 with the super-surface nano structure by adopting an ion beam assisted deposition process to prepare an upper reflector 4;
s9, etching a pressure welding point contact hole by adopting a photoetching process;
and S10, removing the optical filter, the silicon and the front medium of the image sensor on the pressure welding point by adopting an etching process, exposing the contact electrode hole to form an electrical connection contact point, and finishing the manufacture of the staring multispectral imaging device.
The invention integrates the multispectral optical filter on the surface of each pixel of a back-illuminated image sensor (CCD or CIS) chip in situ, has the advantages of small volume, light weight, multiple tunable wave bands, high reliability, good compatibility with silicon technology, small optical crosstalk, capability of realizing multi/high/hyperspectral staring imaging and the like, and is very suitable for the spectral imaging application of platforms with higher requirements on weight and volume, such as unmanned planes, portable spectral imagers, small/micro/nano satellite loads, missiles, individual equipment and the like.
Drawings
FIG. 1 is a chip structure of a staring multispectral imaging device of the present invention;
FIG. 2 is a schematic top view of a super-surface nanostructure according to the present invention;
FIG. 3 is a schematic diagram of pixel distribution of the multispectral imaging chip according to the present invention;
wherein, 1, a back-illuminated image sensor chip; 2. a lower reflector; 3. a Fabry-Perot (F-P) cavity with a super-surface nano structure; 4. an upper mirror; 5-1 to 5-n and 1 to n wave bands; 6-1 to 6-n and 1 to n wave bands of super-surface nano-structure; 6-1-m to 6-n-m, and the 1 st to n wave bands of the mth row in the multispectral pixel structure; 7. a super-surface nanostructure base material; 8. a super-surface nanostructure filling material; 9. a light entry surface of a back-illuminated image sensor chip; 10. a multispectral imaging chip photosensitive area; 11. and (3) pressing and welding spots of the multispectral imaging device.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The optical front end of the traditional multispectral imaging system (spectral filtering system) or because of the heavy weight and large volume (prism/grating dispersion type, interference type and acousto-optic modulation type), or because of the reasons of less filter segments (dielectric filter type), poorer time resolution (prism/grating dispersion type, interference type, acousto-optic modulation type), large spectral crosstalk (dielectric filter type) and the like, the application requirements of platforms such as portable spectral imagers, unmanned planes, micro-nano satellites and the like on the miniaturization, integration and low cost of spectral imaging systems are difficult to meet, the present invention therefore proposes a staring multispectral imaging device, as in fig. 1, comprising a back-illuminated image sensor chip 1, a lower reflector 2, a super-surface nano-structure F-P cavity 3 and an upper reflector 4 are arranged on the back-illuminated image sensor chip 1 from bottom to top; the back-illuminated image sensor chip 1 comprises a plurality of n x m multispectral imaging chip photosensitive areas, and each n x m multispectral imaging chip photosensitive area comprises a plurality of single spectral segment pixels with different spectral segments; each single spectral band pixel consists of a super-surface nanostructure with a spectral band equidistantly arranged in a super-surface nanostructure Fabry-Perot cavity 3 and a pixel photosensitive area with the spectral band arranged in a back-illuminated image sensor chip 1, wherein the pixel photosensitive area of each spectral band is positioned under the super-surface nanostructure of the spectral band, such as the pixel photosensitive area 5-1 of the 1 st waveband and the pixel photosensitive area 5-2 of the 2 nd waveband in the graph 1, the pixel photosensitive area 5-n of the nth waveband, and the pixel photosensitive area is arranged under the super-surface nanostructure of each spectral band; the Fabry-Perot (F-P) multispectral optical filter is formed by the three-layer structure of the lower reflector, the super-surface nanostructure F-P cavity and the upper reflector, and each spectral band is realized by adjusting the optical thickness of the super-surface nanostructure F-P cavity, so that the Fabry-Perot multispectral optical filter has the advantages of simple structure and less film layers.
Referring to fig. 3, a light inlet surface 9 of a back-illuminated image sensor chip is provided with a plurality of multispectral imaging chip photosensitive regions 10, the multispectral imaging chip photosensitive regions 10 include an array formed by n × m single-spectral-segment pixels, the first row is a single-spectral-segment pixel of 1-n wave bands, the second row is a single-spectral-segment pixel of n + 1-2 n wave bands, the mth row is a single-spectral-segment pixel of n (m-1) + 1-mn wave bands, and in the multispectral imaging chip photosensitive region of n × m in the figure, the first row is a super-surface nanostructure 6-1 of the 1 st wave band to a super-surface nanostructure 6-n of the nth wave band; the number of the single spectrum segment units is n multiplied by m, and the number of the single spectrum segment units is n multiplied by m.
Further, the back-illuminated Image Sensor chip 1 is a Charge Coupled Device (CCD) or a CMOS Image Sensor (CIS); on one hand, the back-illuminated image sensor CCD or CIS is used as a multispectral imaging basic chip and has the characteristics of high sensitivity, high film system designability and high process controllability; on the other hand, multispectral optical filter arrays are integrated on the surfaces of all pixels of a back-illuminated image sensor chip (back surface) in situ, and multispectral staring imaging is achieved.
Furthermore, the lower reflector 2 and the upper reflector 4 adopt a Bragg (bragg) all-dielectric multilayer film stack structure, and have the advantage of high peak transmittance.
Further, as shown in fig. 2, the super-surface nanostructure comprises a super-surface nanostructure base material 7, nanopores are regularly arranged on the super-surface nanostructure base material 7, and a super-surface nanostructure filling material 8 is filled in the nano-pores, and the super-surface nanostructure base material 7 and the super-surface nanostructure filling material 8 are used by matching a high refractive index material with a low refractive index material, that is, if the super-surface nanostructure base material 7 is a high refractive index material, the super-surface nanostructure filling material 8 is a low refractive index material; if the super-surface nanostructure base material 7 is a low refractive index material then the super-surface nanostructure filler material 8 is a high refractive index material.
The diameter of the nano-pores of the super-surface nano-structure of each different waveband is consistent with the depth of the nano-pores, and the passband wavelength of one waveband is expressed as:
wherein λ is a passband wavelength of a band; d is the thickness of the Fabry-Perot cavity with the super-surface nano structure; k is an integer; m is an intermediate parameter; n is the equivalent refractive index of the super-surface nanostructure, is determined by the super-surface nanostructure base material 7 and the super-surface nanostructure filling material 8 together, and is adjusted by adjusting the density of the nano holes, namely, the equivalent refractive index is adjusted by adjusting the proportion of the super-surface nanostructure base material 7 and the super-surface nanostructure filling material 8, and the equivalent refractive index of the super-surface nanostructure can be expressed as follows:
nTE＝[(1-f)*n1 2+f*n2 2]1/2
nTM＝[(1-f)/n1 2+f/n2 2]-1/2
wherein n isTE、nTMRespectively representing equivalent refractive indexes of TE wave and TM wave; n is1、n2Respectively representing the refractive indexes of two mediums, namely a super-surface nano-structure base material 7 and a super-surface nano-structure filling material 8, wherein f is the proportion of a super-surface nano-structure filling factor, and when the materials are determined, the refractive index of the sub-wavelength grating is only determined by the filling factor.
Further, the super-surface nano-structure base material 7 and the super-surface nano-structure filling material 8 adopt SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3A material.
Further, the lower reflector 2 and the upper reflector 4 are made of high-transmittance dielectric material, including SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3A material.
Compared with the prior art, the invention adopts the pixel surface dielectric film (F-P filter) to filter light, omits a heavy dispersion or interference device, and has small volume and light weight compared with prism/grating dispersion type, interference type and acousto-optic modulation type light splitting systems;
the filtering wave band is realized by adjusting the optical thickness of the F-P cavity, different optical thicknesses correspond to different pass bands, and the tunable wave band is more than that of a dielectric filter type light splitting system;
the F-P cavity adopts a solid cavity form, has no high-frequency vibration and has high reliability compared with an MEMS type light splitting system;
the dielectric film can adopt SiO2, Si3N4, TiO2 and the like, and has good compatibility with a silicon process;
the optical filter is directly attached to the imaging image sensor, no extra spectral crosstalk exists, and the spectral crosstalk is reduced compared with a dielectric optical filter type beam splitting system;
the invention can realize multispectral staring imaging, can adopt space-division to realize multispectral staring imaging, has high frame frequency, and avoids the problems of fuzzy moving object imaging, low signal-to-noise ratio in high-speed application, serious detection result delay and the like of a scanning type imaging spectrometer;
the invention can also realize hyper-spectral imaging and on-chip integration of the optical filter, can realize the manufacture of the optical filter array at the pixel level by adopting the modern semiconductor process, and also can realize the spectral filtering at the pixel level, thereby leading the spectral band number of the imaging micro-system to be capable of expanding to the scale of the pixel number and realizing the hyper-spectral imaging.
Based on the advantages, the invention is very suitable for multispectral imaging application of unmanned aerial vehicles, portable spectral imaging instruments, small/micro/nano satellite loads and other platforms with higher requirements on weight and volume.
The invention also provides a preparation method of the staring multispectral imaging device, which comprises the following steps:
s1, preparing a back-illuminated image sensor 1; during preparation, an alignment mark required by back-side pixel alignment photoetching is required to be manufactured on the back side of the back-side image sensor 1, and the mark is used for aligning an optical filter manufactured by a subsequent process with a photosensitive area of a front-side pixel;
s2, adopting an ion beam assisted deposition process to deposit a plurality of layers of dielectric materials on the light inlet surface of the back-illuminated image sensor to prepare a lower reflector 2;
s3, depositing the super-surface nano-structure base material 7 on the surface of the lower reflector 2 by adopting an ion beam assisted deposition process;
s4, photoetching a mask pattern of the super-surface nano-structure array for multispectral light filtering at the surface pixel in-situ position of the super-surface nano-structure base material 7 by adopting a photoetching process;
s5, transferring the mask pattern to the super-surface nano-structure base material 7 by adopting an etching process to form super-surface nano holes;
and S6, filling the super-surface nano-structure filling material 8 into the super-surface nano holes by adopting an atomic layer deposition process, and adjusting the equivalent refractive index of the Fabry-Perot cavity.
S7, polishing the surface of the device by adopting a CMP process to finish the manufacture of the Fabry-Perot cavity 3 with the super-surface nano structure;
s8, carrying out multi-layer dielectric material deposition on the surface of the Fabry-Perot cavity 3 with the super-surface nano structure by adopting an ion beam assisted deposition process to prepare an upper reflector 4;
s9, etching a pressure welding point contact hole by adopting a photoetching process;
and S10, removing the optical filter, the silicon and the front medium of the image sensor on the pressure welding point by adopting an etching process, exposing the contact electrode hole to form an electrical connection contact point, namely the pressure welding point 11 of the multispectral imaging device in the figure 3, and finishing the manufacture of the staring multispectral imaging device.
The multispectral imaging devices prepared in the above way are orderly arranged to form an mxn spectral band multispectral imaging chip photosensitive area 9, and the mxn spectral band multispectral imaging chip photosensitive area 9 comprises a single multispectral unit 10 with mxn bands.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A staring multispectral imaging device comprises a back-illuminated image sensor chip (1), and is characterized in that a lower reflector (2), a super-surface nanostructure Fabry-Perot cavity (3) and an upper reflector (4) are arranged on the back-illuminated image sensor chip (1) from bottom to top at one time; the back-illuminated image sensor chip (1) comprises a plurality of multispectral imaging chip photosensitive areas, and each multispectral imaging chip photosensitive area comprises single spectral segment pixels of n multiplied by m different spectral segments; each single spectrum section pixel consists of a super-surface nano structure with the spectrum section equidistantly arranged in a super-surface nano structure Fabry-Perot cavity (3) and a pixel photosensitive area with the spectrum section arranged in a back-illuminated image sensor chip (1), and the pixel photosensitive area of each spectrum section is positioned right below the super-surface nano structure of the spectrum section; the multispectral imaging chip photosensitive area comprises an array formed by nxm single-spectrum-segment pixels, the first action is a single-spectrum-segment pixel of 1-n wave bands, the second action is a single-spectrum-segment pixel of n + 1-2 n wave bands, the.
Wherein, λ is the passband center wavelength of a band; d is the thickness of the Fabry-Perot cavity with the super-surface nano structure; n is the equivalent refractive index of the super-surface nanostructure;
for the reflection phase shift of the super-surface nano-structure base material,
filling the super surface nano structure with a material for reflection phase shift; k is any integer.
2. The gaze-fixation type multispectral imaging device as claimed in claim 1, wherein the whole tuning band range of the multispectral imaging chip is 300 nm-1100 nm, and the half-peak width of the single-spectral pixel is 3-50 nm.
3. The gaze-type multispectral imaging device according to claim 1, wherein the super-surface nanostructure comprises a super-surface nanostructure base material (7), wherein nanopores are regularly arranged on the super-surface nanostructure base material (7), and the nano-surface nanostructure filling material (8) is filled in the nano-pores, and the super-surface nanostructure base material (7) and the super-surface nanostructure filling material (8) are made of a high refractive index material in combination with a low refractive index material, i.e. if the super-surface nanostructure base material (7) is a high refractive index material, the super-surface nanostructure filling material (8) is a low refractive index material; if the super-surface nanostructure base material (7) is a low refractive index material, the super-surface nanostructure filling material (8) is a high refractive index material.
4. A staring multispectral imaging device according to claim 3, wherein the super-surface-nanostructure base material (7) and the super-surface-nanostructure filling material (8) are made of SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3A material.
5. A staring multispectral imaging device according to claim 1, wherein the lower mirror (2) and the upper mirror (4) are bragg all-dielectric multilayer stacks.
6. A staring multispectral imaging device according to claim 1, wherein the lower mirror (2) and the upper mirror (4) are made of a dielectric material with high transmittance, including SiO2、MgF2、Si3N4、Nb2O5、TiO2Or Al2O3A material.
7. A gaze-type multispectral imaging device according to claim 1, wherein the back-illuminated image sensor chip (1) is a charge-coupled device or a CMOS image sensor.
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| CN113614633B (en) * | 2020-06-30 | 2023-03-10 | 深圳市海谱纳米光学科技有限公司 | Fabry-Perot cavity-based imaging system |
| CN113299671B (en) * | 2021-03-11 | 2022-02-18 | 中国科学院上海技术物理研究所 | Infrared color focal plane detector of in-situ integrated super-surface phased array |
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