CN110428039B - Programmable control radio frequency power amplifier power supply module - Google Patents
Programmable control radio frequency power amplifier power supply module Download PDFInfo
- Publication number
- CN110428039B CN110428039B CN201910658225.9A CN201910658225A CN110428039B CN 110428039 B CN110428039 B CN 110428039B CN 201910658225 A CN201910658225 A CN 201910658225A CN 110428039 B CN110428039 B CN 110428039B
- Authority
- CN
- China
- Prior art keywords
- power supply
- voltage
- radio frequency
- power amplifier
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
- G06K19/0715—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement including means to regulate power transfer to the integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/16—Adjustable resistors including plural resistive elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a programmable control radio frequency power amplifier power supply module, which consists of a control MCU, a digital adjustable potentiometer and a power supply circuit; the control MCU is used for controlling the power-on time sequence of the power supply circuit and adjusting the voltage of the grid electrode and the drain electrode by controlling the resistance value of the digital adjustable potentiometer; the power supply circuit comprises two power supplies which respectively provide voltage for the drain electrode and the grid electrode of the radio frequency power amplifier chip. The invention can carry out programmable control power-on the radio frequency power amplifier chip with strict power-on time sequence, is stable and reliable and plays a role in protecting the radio frequency power amplifier chip; the invention has low realization cost and simple structure, can freely adjust the voltage output to the grid electrode and the drain electrode of the radio frequency power amplifier in a mode of programmable controlling the resistance value of the digital adjustable potentiometer through the MCU, has strong applicability and can be suitable for different types of radio frequency power amplifier chips.
Description
Technical Field
The invention relates to the field of radio frequency power amplifiers, in particular to a programmable control radio frequency power amplifier power supply module.
Background
In many application fields such as communication and radar, a radio frequency power amplifier is a main component of a radio frequency transmitting system. Currently, transceiver systems of wireless communication and radar are developing towards high integration and microminiaturization, and radio frequency power amplifier chips are widely applied to transceiver systems of wireless communication, internet of things, radar and the like.
The existing commonly used radio frequency power amplifier chip mostly adopts a field effect transistor (MOSFET), the MOSFET has strict requirements on the power-on time sequence, the drain voltage must be applied after the grid is clamped off, if the power is simultaneously powered on, the power amplifier chip can be caused to be short-circuited to cause power supply overload and damage the chip, and therefore the power-on time sequence of the power amplifier chip must be controlled through programming. In order to make the rf power amplifier reach an ideal operating point, after the drain voltage is applied, the gate voltage must be adjusted to make the channel gradually conduct to make the drain reach an ideal operating current, so the gate voltage should be programmably adjusted to ensure the normal operation of the power amplifier chip, and to ensure the reliability and stability of the system. At present, a special radio frequency power amplifier power-on control chip is also provided, but the price is high, the radio frequency power amplifier power-on control chip is mainly suitable for one or one class of power amplifiers, the existing radio frequency power amplifier has more different time sequence control requirements and more than two voltage adjustable control requirements, and a solution scheme with simpler realization and lower cost is required.
Disclosure of Invention
The invention aims to provide a programmable control power supply module of a radio frequency power amplifier, which is used for meeting the power-on requirement of the radio frequency power amplifier with a requirement on a power-on time sequence and ensuring the stability and reliability of a system.
The technical solution for realizing the purpose of the invention is as follows: a programmable control radio frequency power amplifier power supply module comprises a control MCU, a digital adjustable potentiometer and a power supply circuit;
the control MCU is used for controlling the power-on time sequence of the power supply circuit and adjusting the voltage of the grid electrode and the drain electrode by controlling the resistance value of the digital adjustable potentiometer; the power supply circuit comprises two power supplies which respectively provide voltage for the drain electrode and the grid electrode of the radio frequency power amplifier chip.
Compared with the prior art, the invention has the following remarkable advantages: (1) compared with a special radio frequency power discharge power-on control chip with high price, the invention has low realization cost and easy realization; (2) the programmable power-on time sequence control and the programmable power-on voltage control can meet the power-on requirements of different types of power amplifiers.
Drawings
Fig. 1 is a schematic system diagram of a programmable control rf power amplifier power supply module.
Fig. 2 is a schematic diagram of a specific embodiment of a programmable control rf power amplifier power supply module.
Fig. 3 is a control flow chart of the programmable control rf power amplifier power supply module.
Detailed Description
At present, a MOSFET type radio frequency power amplifier chip is sensitive to a power-on time sequence and needs to be controlled programmably, and the gate voltage needs to be adjusted to a certain range when the radio frequency power amplifier chip reaches an ideal working point, so that the gate voltage also needs to be controlled in an adjustable manner. The invention provides a programmable control power supply module of a radio frequency power amplifier, which can perform programmable control power-on a radio frequency power amplifier chip with strict power-on time sequence, is stable and reliable and can protect the radio frequency power amplifier chip.
As shown in fig. 1, a programmable control rf power amplifier power supply module is composed of a control MCU, a digital adjustable potentiometer and a power supply circuit;
the control MCU is used for controlling the power-on time sequence of the power supply circuit and adjusting the voltage of the grid electrode and the drain electrode by controlling the resistance value of the digital adjustable potentiometer; the power supply circuit comprises two power supplies which respectively provide voltage for the drain electrode and the grid electrode of the radio frequency power amplification chip.
The power supply circuit comprises a first power supply for providing voltage for a drain electrode of the radio frequency power amplifier and a second power supply for providing voltage for a grid electrode of the radio frequency power amplifier;
the first power supply adopts a level conversion chip to control an enabling end, the output voltage of the first power supply is regulated by the resistance value of a digital adjustable potentiometer, and the output is connected to a drain electrode of a radio frequency power amplifier;
the second power supply is generated by the output voltage division of a first level conversion circuit and a second level conversion circuit, the first level conversion circuit adopts a negative-to-negative level conversion chip, the second level conversion circuit adopts a band-enable control level conversion chip, and the output voltage of the second level conversion circuit is adjusted by the resistance value of the digital adjustable potentiometer; the outputs of the first level switching circuit and the second level switching circuit are connected together through a divider resistor, and the outputs are connected to the grid of the radio frequency power amplifier.
The level conversion chip enabling end of the first power supply, the digital adjustable potentiometer control end of the first power supply, the second level conversion chip enabling end of the second power supply and the second level conversion circuit digital adjustable potentiometer control end of the second power supply are all connected to a control port of the control MCU.
And the control MCU sets the power-on time sequence of the power supply circuit through the delay of the internal clock. The power-on sequence is as follows: firstly, the clamping of the grid of the radio frequency power amplifier is ensured, then the voltage output of the drain electrode is controlled, and finally the grid voltage is adjusted to an ideal working point through the resistance value of the programmable control digital adjustable potentiometer.
The enabling ends of the output voltage of the power supply circuit are connected to the I/O port of the control MCU, and the power-on time sequence is controlled by the control MCU.
The power-on sequence is as follows: firstly, the clamping of the grid of the radio frequency power amplifier is ensured, then the voltage output of the drain electrode is controlled, and finally the grid voltage is adjusted to an ideal working point through the resistance value of the programmable control digital adjustable potentiometer.
The output voltage of the second power supply is generated by dividing two paths of voltage, wherein one path of voltage is fixedly output to be lower than-4V, the other path of voltage is generated by a level conversion chip with an enable control and is adjustable, the voltage is adjusted by controlling the resistance value of the MCU control digital adjustable potentiometer, and the voltage output value is determined by the grid voltage required by the radio frequency power amplifier chip to reach the optimal working point.
The control MCU of the invention is an ARM microprocessor, and in addition, the control MCU also comprises a peripheral circuit of the microprocessor. The control MCU has two functions, one is to control the power-on time sequence of the power supply circuit in a programmable way, and the other is to control the voltage of the grid electrode and the drain electrode in a programmable way by controlling the resistance value of the digital adjustable potentiometer.
The digital adjustable potentiometer is also called a numerical control programmable resistor, the resistance value of the digital adjustable potentiometer is adjusted by a digital input mode, the adjustment precision is high, the grid electrode voltage and the drain electrode voltage on the power supply circuit are both output by the adjustable level conversion chip, and the output voltage is adjusted by the resistance value of the digital adjustable potentiometer.
The power supply circuit comprises two paths of power supply outputs. The first power supply independently provides voltage for the drain electrode of the radio frequency power amplifier chip, and the electrifying time sequence of the first power supply is controlled by the control module. The power supply adopts a voltage conversion chip with an enable control and voltage adjustable output, and the control module enables signals to the voltage conversion chip under the condition that the grid of the radio frequency power amplifier chip is clamped off. The voltage conversion chip has strong loading capacity and meets the current requirement of normal work of the radio frequency power amplifier.
The second power supply provides voltage for the grid electrode of the radio frequency power amplification chip, the electrifying time sequence of the second power supply is controlled by the control module, and the output voltage of the second power supply is controlled by the digital adjustable potentiometer. The second power supply needs to provide a power supply above-2V to ensure that the grid of the radio frequency power amplifier chip is clamped off initially, and the grid voltage is pulled to the voltage of an ideal working point after the drain voltage is applied. The output voltage of the second power supply is generated by dividing two paths of voltage, wherein one path of voltage is fixedly output to be lower than-4V, the other path of voltage is generated by a level conversion chip with an enable control and is adjustable, the voltage is adjusted by controlling the resistance value of the MCU control digital adjustable potentiometer, and the voltage output value is determined by the grid voltage required by the radio frequency power amplifier chip to reach the optimal working point.
The invention can meet the programmable power-on control of the radio frequency power amplifier chip with strict requirements on power-on time sequence, and can also meet the programmable control of the voltage output to the radio frequency power amplifier grid and the drain.
In order to make the technical problems, technical solutions and advantageous effects of the present invention more clear and obvious, the present invention is further described in detail below with reference to the accompanying drawings and embodiments.
Examples
As shown in fig. 2, a programmable control rf power amplifier power supply module includes a power supply circuit, a control MCU and a digital adjustable potentiometer.
The power supply circuit comprises two power supplies, wherein the first power supply provides 5V voltage for the drain electrode of the radio frequency power amplifier chip, the bypass capacitors of the input end and the enable end of the radio frequency power amplifier chip and the decoupling capacitors of the output end of the radio frequency power amplifier chip are all in a microfarad level, and the capacitance value of the capacitors adopted in the embodiment ranges from 0.1 microfarad to 10 microfarad. The first power supply adopts an output voltage adjustable level conversion chip with an enabling control, an enabling end of the first power supply is controlled by a common I/O pin of the MCU, and the first power supply can output voltage after the I/O pin is enabled. The voltage control resistor of the first power supply level conversion chip is an adjustable digital adjustable potentiometer, and the MCU is controlled to provide digital input through the communication interface to adjust the resistance value of the potentiometer, so that the power supply output of the first power supply is controlled.
The second power supply provides voltage output for the grid electrode of the radio frequency power amplifier chip, the grid electrode voltage of the radio frequency power amplifier is-2.5V at the beginning to ensure that the grid electrode is clamped off, and after the drain electrode voltage is applied, the grid electrode voltage jumps to about-1V to achieve the optimal working point of the radio frequency power amplifier. The second power supply is generated by voltage division after two paths of voltage are connected with the same resistor in series, wherein one path is-5V, the other path is 3V, and the 3V voltage is generated by controlling the enabling end of the level conversion chip by the MCU. the-5V voltage is generated by a DCDC switching power supply, and the output resistance of the DCDC switching power supply is as small as possible to ensure stable output voltage. The 3V voltage is adjustable voltage, the output voltage of the adjustable potentiometer can be adjusted through the resistance value of the digital adjustable potentiometer, and the digital adjustable potentiometer is controlled by the control MCU and can be adjusted according to the actual working condition to provide the grid voltage of the optimal working point of the radio frequency power amplifier.
The control module comprises an MCU of an ARM core and a peripheral circuit thereof, and has two functions, wherein one function is to control the power-on time sequence of the power supply circuit in a programmable manner, and the other function is to regulate the voltage of a grid electrode and a drain electrode in a programmable manner by controlling the resistance value of the digital adjustable potentiometer.
As shown in fig. 3, in the power-on sequence of the power supply module, the second power supply provides-2.5V voltage to the gate of the rf power amplifier chip after being divided by-5V, so as to ensure that the gate is pinched off. After the control module starts to work, the first power supply can be enabled to provide the drain voltage of the radio frequency power amplifier chip, the second path of voltage of the second power supply is enabled, and the 3V voltage and the-5V voltage are divided to generate-1V voltage to be provided for the grid electrode of the radio frequency power amplifier chip. The grid voltage and the drain voltage can be programmably adjusted to be suitable for different radio frequency power amplifier chips.
The programmable time sequence power-on of the radio frequency power amplifier chip is realized by controlling the internal clock delay of the MCU, the normal work of the radio frequency power amplifier chip is ensured, and the stability and the safety of the system are improved. The control MCU also realizes programmable regulation of the grid voltage and the drain voltage of the radio frequency power amplifier chip by controlling the resistance value of the adjustable digital adjustable potentiometer, so that the power supply module is suitable for various power amplifier chips, and has simple structure and low cost.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any modifications or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. A programmable control radio frequency power amplifier power supply module is characterized by comprising a control MCU, a digital adjustable potentiometer and a power supply circuit;
the control MCU is used for controlling the power-on time sequence of the power supply circuit and adjusting the voltage of the grid electrode and the drain electrode by controlling the resistance value of the digital adjustable potentiometer; the power supply circuit comprises two power supplies which respectively provide voltage for the drain electrode and the grid electrode of the radio frequency power amplifier chip;
the power supply circuit comprises a first power supply for providing voltage for a drain electrode of the radio frequency power amplifier and a second power supply for providing voltage for a grid electrode of the radio frequency power amplifier;
the first power supply adopts a level conversion chip to control an enabling end, the output voltage of the first power supply is regulated by the resistance value of a digital adjustable potentiometer, and the output is connected to a drain electrode of a radio frequency power amplifier;
the second power supply is generated by the output voltage division of a first level conversion circuit and a second level conversion circuit, the first level conversion circuit adopts a negative-to-negative level conversion chip, the second level conversion circuit adopts a band-enable control level conversion chip, and the output voltage of the second level conversion circuit is adjusted by the resistance value of the digital adjustable potentiometer; the outputs of the first level switching circuit and the second level switching circuit are connected together through a divider resistor, and the outputs are connected to the grid of the radio frequency power amplifier.
2. The power supply module of the programmable control radio frequency power amplifier of claim 1, wherein an enable terminal of a level shift chip of the first power supply and a control terminal of a digital adjustable potentiometer of the first power supply are connected to a control port of the control MCU.
3. The power supply module of a programmable radio frequency power amplifier according to claim 1, wherein the control MCU sets a power-on timing sequence of the power supply circuit by an internal clock delay.
4. The programmable power supply module of claim 3, wherein the power-on sequence is: firstly, the clamping of the grid of the radio frequency power amplifier is ensured, then the voltage output of the drain electrode is controlled, and finally the grid voltage is adjusted to an ideal working point through the resistance value of the programmable control digital adjustable potentiometer.
5. The power supply module of claim 1, wherein the output voltage of the second power supply is divided by two voltage sources, one of the voltage sources is used for outputting a voltage below-4V, the other voltage source is used for generating a voltage level conversion chip with an enable control, the voltage level conversion chip is adjustable, the voltage level conversion chip controls the resistance of the digital adjustable potentiometer to adjust by controlling the MCU, and the output voltage value is determined by the gate voltage required by the rf power amplifier chip to reach the optimal operating point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658225.9A CN110428039B (en) | 2019-07-21 | 2019-07-21 | Programmable control radio frequency power amplifier power supply module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658225.9A CN110428039B (en) | 2019-07-21 | 2019-07-21 | Programmable control radio frequency power amplifier power supply module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110428039A CN110428039A (en) | 2019-11-08 |
| CN110428039B true CN110428039B (en) | 2022-09-27 |
Family
ID=68411460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910658225.9A Active CN110428039B (en) | 2019-07-21 | 2019-07-21 | Programmable control radio frequency power amplifier power supply module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110428039B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111294214B (en) * | 2020-01-21 | 2021-09-14 | Oppo广东移动通信有限公司 | Power supply method and related product |
| CN112153532B (en) * | 2020-09-27 | 2022-07-19 | 上海博泰悦臻网络技术服务有限公司 | Vehicle, vehicle machine with vehicle machine, vehicle machine circuit adaptive to external power amplifier and control method |
| CN112799020B (en) * | 2020-12-16 | 2023-11-28 | 北京无线电测量研究所 | Multi-voltage power supply modulation chip |
| CN115373324B (en) * | 2022-10-19 | 2023-01-24 | 井芯微电子技术(天津)有限公司 | Board card power supply time sequence control and monitoring method and device based on micro control unit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956979A (en) * | 2014-04-01 | 2014-07-30 | 京信通信技术(广州)有限公司 | Power supply control device for power amplifier tube and power-on and power-off control method thereof |
| CN207529257U (en) * | 2017-07-05 | 2018-06-22 | 南京朴与诚电子科技有限公司 | GaN-HEMT power tube grid drain electrodes sequence of power switching protects biasing circuit |
-
2019
- 2019-07-21 CN CN201910658225.9A patent/CN110428039B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956979A (en) * | 2014-04-01 | 2014-07-30 | 京信通信技术(广州)有限公司 | Power supply control device for power amplifier tube and power-on and power-off control method thereof |
| CN207529257U (en) * | 2017-07-05 | 2018-06-22 | 南京朴与诚电子科技有限公司 | GaN-HEMT power tube grid drain electrodes sequence of power switching protects biasing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110428039A (en) | 2019-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110428039B (en) | Programmable control radio frequency power amplifier power supply module | |
| US9921593B2 (en) | Wideband low dropout voltage regulator with power supply rejection boost | |
| US9000742B2 (en) | Signal generating circuit | |
| US7746044B2 (en) | Power supply system for motherboard | |
| US11821927B2 (en) | High-voltage tolerant, high-speed reverse current detection and protection for buck-boost converters | |
| TWI662392B (en) | Reduction of output undershoot in low-current voltage regulators | |
| US20110074508A1 (en) | Voltage regulator | |
| CN110647201B (en) | Power supply system | |
| WO2016078618A1 (en) | Power control method, device and communication terminal for radio frequency power amplifier | |
| CN108241396A (en) | A kind of low pressure difference linear voltage regulator for improving transient response speed | |
| KR20180129948A (en) | Circuit systems and methods for gallium nitride (GaN) devices | |
| KR101952857B1 (en) | Switching circuit and high frequency switch including the same | |
| US20200036336A1 (en) | Power control circuit and power amplification circuit | |
| US9059699B2 (en) | Power supply switching circuit | |
| CN113064460A (en) | Low dropout regulator circuit with high power supply rejection ratio | |
| CN112732003B (en) | Voltage regulator with temperature compensation and full-range input | |
| US20130181777A1 (en) | Voltage regulator | |
| CN109818257B (en) | CMOS (complementary Metal oxide semiconductor) process laser driving circuit | |
| JP2019004556A (en) | Current control circuit, and power supply management circuit employing the same | |
| US11994892B2 (en) | Shunt regulator | |
| US11703896B2 (en) | Low-dropout regulator and circuit system using the same | |
| CN102447466B (en) | IO (Input/Output) circuit for accurate pull-down current | |
| US8416591B2 (en) | DC-DC converter with soft start circuit | |
| US11296596B1 (en) | Noise reduction circuit for voltage regulator | |
| CN111835195B (en) | Self-adaptive power supply voltage regulating circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |