CN110424049A - The recovery method of casting single crystal seed crystal - Google Patents
The recovery method of casting single crystal seed crystal Download PDFInfo
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- CN110424049A CN110424049A CN201910796901.9A CN201910796901A CN110424049A CN 110424049 A CN110424049 A CN 110424049A CN 201910796901 A CN201910796901 A CN 201910796901A CN 110424049 A CN110424049 A CN 110424049A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of recovery method of casting single crystal seed crystal, includes the following steps: seed crystal splicing being layed in crucible bottom, form seed layer；Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and grow the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, obtains casting single crystal silicon ingot；The casting single crystal silicon ingot is taken out, and full page seed crystal is obtained along cutting perpendicular to the direction of growth to casting monocrystalline silicon ingot butt portion；The full page seed crystal is surface-treated；The full page seed crystal after surface treatment is layed in the crucible bottom, the seed layer is formed, greatly reduces seed crystal cost in this way, thereby reduce the production cost of casting single crystal silicon ingot.
Description
Technical field
The present invention relates to casting monocrystalline silicon ingot casting fields, more particularly to a kind of recovery method of casting single crystal seed crystal.
Background technique
In current solar energy materials market, crystalline silicon is mainly wrapped in occupation of absolute predominance, crystal silicon solar product
Monocrystalline silicon and polysilicon are included, wherein impurity is low with the content of defect in monocrystalline silicon battery, high conversion efficiency；But preparation process is multiple
Miscellaneous, high to the purity requirement of raw material, production cost is higher；There are a large amount of crystal boundaries, highdensity dislocation inside polycrystal silicon cell
And impurity, transfer efficiency is than single crystal battery low efficiency 1.5% or so, lower production costs, and cost performance is higher.
And casting monocrystalline silicon is new product that is a kind of while having monocrystalline silicon high conversion efficiency and polysilicon high performance-price ratio.Casting
Monocrystalline silicon is made with certain crystal orientation, crystal boundary is few, dislocation density is low, and battery uses alkali making herbs into wool, and transfer efficiency compares polysilicon
Battery significantly improves, or even close to monocrystalline silicon battery, production cost is significantly lower than monocrystalline silicon, has important commercial value.
Currently, needing to be laid with a certain amount of single crystal seed in casting monocrystalline silicon production process and being located at crucible bottom, by adding
Heat, the fusing control endless running down of seed crystal, control temperature gradient, so that silicon liquid is grown on the seed crystal not exclusively melted.But
Casting single crystal silicon ingot is needed using a large amount of seed crystal, these seed crystals need to draw using pulling technique, therefore seed crystal is at high cost,
Increase the manufacturing cost of casting single crystal silicon ingot.
Summary of the invention
Based on this, it is necessary to for the higher problem of monocrystal silicon manufacturing cost is made because seed crystal is at high cost at present, provide
A kind of recovery method for the casting single crystal seed crystal reducing cost.
Above-mentioned purpose is achieved through the following technical solutions:
A kind of recovery method of casting single crystal seed crystal, includes the following steps:
Seed crystal splicing is layed in crucible bottom, forms seed layer；
Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and
It grows the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, obtains casting monocrystalline silicon
Ingot；
The casting single crystal silicon ingot is taken out, and casting monocrystalline silicon ingot butt portion edge is cut perpendicular to the direction of growth
It cuts, obtains full page seed crystal；
The full page seed crystal is surface-treated；
The full page seed crystal after surface treatment is layed in the crucible bottom, is formed for growing the casting single crystal
The seed layer of silicon ingot.
In one of the embodiments, it is described to the full page seed crystal carry out surface treatment include:
Mechanical treatment step mechanically polishes the full page seed crystal, to guarantee the dimensional accuracy of the full page seed crystal.
It is described in one of the embodiments, that the full page seed crystal is surface-treated further include:
Etch step carries out chemical polishing to the full page seed crystal, is stained with removing the full page seed crystal face.
The chemical solution of the etch step is nitric/hydrofluoric solution or hydrogen in one of the embodiments,
Potassium oxide/sodium hydroxide solution.
In one of the embodiments, the etch step remove the full page seed crystal surface thickness be 10 μm~
100μm。
The recovery method further includes following steps in one of the embodiments:
Flaw-piece step is gone, the flaw-piece of the full page seed crystal is removed before being surface-treated, to remove the full page seed
The contact portion of crystal edge edge and the crucible.
The hem width range of the full page seed crystal removal flaw-piece is 20mm~30mm in one of the embodiments,.
The recovery method further includes following steps in one of the embodiments:
Detecting step, before the full page seed crystal is layed in the crucible bottom, to surface treated described whole
Version seed crystal is tested；
Quality inspection steps detect the surface of the full page seed crystal with the presence or absence of defect, and the detection full page seed crystal
Surface or internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the full page seed crystal.
The detecting step in one of the embodiments, further include:
Size detection step detects the practical hem width size and actual (real) thickness size of the full page seed crystal；
If the practical hem width size is located in the range of default hem width size, the actual (real) thickness size is located at default thickness
It spends in size range, then shows the size qualification of the full page seed crystal.
The range of the default hem width size is the default hem width size ± 0.5mm in one of the embodiments,；
The range of the preset thickness size is the preset thickness size ± 2mm.
After adopting the above technical scheme, the present invention at least has the following technical effect that
The recovery method of casting single crystal seed crystal of the invention cuts to obtain at the seed crystal position in casting monocrystalline silicon ingot butt portion
Then full page seed crystal is surface-treated by full page seed crystal, to guarantee the dimensional accuracy and surface quality of full page seed crystal, then will
Full page seed crystal is layed in crucible bottom as seed layer, and silicon material is arranged to prepare next casting monocrystalline silicon on seed layer
Ingot and so on realizes the recycling of casting seed crystal.Efficiently solving makes monocrystal silicon system because seed crystal is at high cost at present
This higher problem is caused, seed crystal cost is greatly reduced, thereby reduces the production cost of casting single crystal silicon ingot.
Detailed description of the invention
Fig. 1 is the flow chart of the recovery method of casting single crystal seed crystal of the invention；
Fig. 2 is the flow chart of full page seed crystal face processing step；
Fig. 3 is the flow chart of full page seed crystal detecting step；
Fig. 4 is the recycling schematic diagram of the casting single crystal seed crystal of one embodiment of the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, by the following examples, it and combines attached
Figure, is further elaborated the recovery method of casting single crystal of the invention seed crystal.It should be appreciated that described herein
Specific examples are only used to explain the present invention, is not intended to limit the present invention.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", " left side ",
The orientation of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside", " clockwise ", " counterclockwise " or position are closed
System is merely for convenience of description of the present invention and simplification of the description to be based on the orientation or positional relationship shown in the drawings, rather than indicates
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitation of the present invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
The present invention provides a kind of recovery methods of casting single crystal seed crystal.The recovery method is for recycling casting monocrystalline silicon
The seed crystal of ingot realizes the recycling of seed crystal.When preparing casting single crystal silicon ingot, prepared by the seed crystal that recycling can be used, greatly
Seed crystal cost is reduced greatly, thereby reduces the production cost of casting single crystal silicon ingot.
Referring to Fig. 1, in the present invention, the recovery method of casting single crystal seed crystal includes the following steps:
S110: seed crystal splicing is layed in crucible bottom, forms seed layer.
In this step, the paving mode of seed crystal is configured according to the size of crucible, for example, can be according to 4 × 4 gusts
The modes such as column, 5 × 5 arrays or 6 × 6 arrays, which are spliced, is layed in crucible bottom.Further, by the Mosaic face of the seed crystal of monocrystalline silicon
It is mutually fitted close and is layed in crucible bottom, and the splicing seams of seed crystal are mutually aligned, guarantees the gap between adjacent seed crystal
It is small as far as possible, and guarantee the of uniform size consistent of each gap.In this manner it is ensured that being spelled in casting single crystal silicon ingot preparation process
Place's well-grown is connect, avoids generating crystal division, guarantees the quality of casting single crystal silicon ingot.
Optionally, seed crystal derives from monocrystal rod, and certainly, in other embodiments of the invention, seed crystal be may also originate from
Monocrystalline fragment etc..
S120: being arranged silicon material above the seed layer, controls the temperature of the crucible, makes the endless fine melt of the seed crystal
Change, and grow the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, is cast
Monocrystal silicon.
In this step, the silicon material on seed layer upper layer can under the control of crucible temperature, along seed crystal crystal structure into
Row growth, and then obtain casting single crystal silicon ingot.Optionally, the mode of setting silicon material is unrestricted in principle above seed layer, can
Think the silicon material of solid, or the silicon material of molten condition.Illustratively, the silicon material of solid is set above seed layer, it is right
Crucible heating melts the silicon material of solid, at this point, the silicon material of molten condition is set to above seed layer.Illustratively, another
The silicon material that solid is heated at crucible, prepares the silicon material of molten condition, the silicon material of the molten condition is poured above seed layer, this
When, the silicon material of molten condition is set to above seed layer.
Moreover, the endless running down of seed layer is made to refer to that part seed crystal melts in seed layer, part seed crystal is non-fusible.Also,
The step of controlling the temperature of crucible includes: that the temperature edge controlled in crucible is gradually increasing shape perpendicular to crucible bottom upwardly direction
At temperature gradient, so that the silicon material of molten condition continues up on seed of single crystal silicon layer along the crystal structure of seed of single crystal silicon
Growth, obtains casting single crystal silicon ingot.
S130: taking out the casting single crystal silicon ingot, and to casting monocrystalline silicon ingot butt portion along perpendicular to the direction of growth into
Row cutting, obtains full page seed crystal.
The casting single crystal silicon ingot prepared is taken out from crucible, the casting monocrystalline silicon ingot butt portion prepared is monocrystalline seed
Crystalline substance can recycle reuse, then be cut by cutting equipment to casting single crystal silicon ingot.Casting monocrystalline silicon after cutting
Ingot butt portion is full page seed crystal, and the casting single crystal silicon ingot that cut bottom can be prepared as casting single crystal silicon wafer, can be applied to prepare
Solar battery.
It should be understood that silicon material is grown along the vertical direction, then in the horizontal direction by the seed in casting monocrystalline silicon ingot butt portion
Crystalline substance is cut down as full page seed crystal.Full page seed crystal may be reused, for as the seed crystal for preparing casting single crystal silicon ingot.It cuts
The cross sectional shape of the shape of full page seed crystal after cutting and square ingot is almost the same, in this way, seed crystal is less prone to and collapses in cutting process
Side unfilled corner equivalent damage phenomenon guarantees the quality of full page seed crystal.
Optionally, casting single crystal silicon ingot is cut using scroll saw or band saw.Illustratively, diamond wire can be used
Saw or band-saw diamond are cut, the defects of to guarantee the cut quality of full page seed crystal, avoid the occurrence of chipping.
S140: the full page seed crystal is surface-treated.
The surface of full page seed crystal after cutting can have certain roughness and dimensional discrepancy, carry out to full page seed crystal
After surface treatment, the size of each full page seed crystal can be made consistent, and guarantee certain dimensional accuracy, guarantee casting monocrystalline silicon
The quality of ingot.Meanwhile surface treatment can also adjust the practical hem width size of full page seed crystal.Silicon material can carry out on full page seed crystal
Growth, so that the practical hem width size for the casting single crystal silicon ingot prepared is consistent with the hem width size of full page seed crystal, in this way, logical
The practical hem width size of full page seed crystal is overregulated to adjust the practical hem width size of casting single crystal silicon ingot, and then is met needed for client
The use demand of silicon wafer.
S150: the full page seed crystal after surface treatment is layed in the crucible bottom, is formed for growing the casting
Make the seed layer of monocrystal silicon.
After full page seed crystal guarantees dimensional accuracy and hem width size by surface treatment, full page seed crystal tool has the dimensions essence
Degree, can directly be layed in the bottom of crucible, without being spliced.The laying process of seed layer can be saved in this way, improve behaviour
Make efficiency, saves the operating time, while also operator being facilitated to operate.Also, since full page seed crystal is a monolith, full page seed crystal
Without mutually being spliced during laying, new splicing seams will not be introduced in seed layer, thus between solving seed crystal
The problem mutually spliced, so that the dislocation of casting single crystal silicon ingot is less, to guarantee the quality of casting single crystal silicon ingot.
After the completion of seed layer is laid with, above-mentioned steps S110 and S120 are repeated, next casting single crystal silicon ingot is obtained.So
Afterwards, casting single crystal silicon ingot is cut to obtain full page seed crystal according to step S130, realizes the reuse again of seed crystal.Then, will
Full page seed crystal is surface-treated according to step S140, and the full page seed crystal after surface treatment is routed to the bottom of crucible again.Such as
This is reciprocal, realizes the recycling of seed crystal, casting single crystal silicon ingot is made, reduces the cost of seed crystal, and then reduce casting single crystal
The production cost of silicon ingot.
Using the recovery method of the casting single crystal seed crystal of above-described embodiment, at the seed crystal position in casting monocrystalline silicon ingot butt portion
Cutting obtains full page seed crystal, then, full page seed crystal is surface-treated, to guarantee the dimensional accuracy and surface matter of full page seed crystal
Amount, then full page seed crystal is layed in crucible bottom as seed layer, and silicon material is set to prepare next casting on seed layer
Monocrystal silicon and so on realizes the recycling of casting seed crystal.Efficiently solving makes monocrystalline because seed crystal is at high cost at present
The higher problem of silicon ingot manufacturing cost, greatly reduces seed crystal cost, thereby reduces the production cost of casting single crystal silicon ingot.And
And using the quality and seed of single crystal silicon of the casting single crystal silicon ingot of full page seed crystal preparation for the first time using obtained casting single crystal silicon ingot
Quality is suitable.
In one embodiment, full page seed crystal with a thickness of 10mm~30mm.The bottom of crucible is layed in using full page seed crystal
Forming seed layer influences the growth of its casting single crystal silicon ingot if the thickness of full page seed crystal is excessively thin, if the thickness mistake of full page seed crystal
Thickness since the production cost of monocrystalline silicon is higher, and then will increase the production cost of casting single crystal silicon ingot.Therefore, full page seed crystal
Thickness is more suitable within the scope of 10mm~30mm.
Referring to Fig. 1 and Fig. 2, in one embodiment, it is described to the full page seed crystal carry out surface treatment include:
S141: mechanical treatment step mechanically polishes the full page seed crystal, to guarantee the size of the full page seed crystal
Precision.
Full page seed crystal is mechanically polished using flour milling machine, the size of full page seed crystal is corrected, so that the ruler of full page seed crystal
The very little size slightly larger than casting single crystal silicon wafer needed for client, while guaranteeing the dimensional accuracy of full page seed crystal.In this way, full page seed crystal
When being layed in crucible bottom, silicon material can directly be grown on full page seed crystal, obtain the casting single crystal silicon ingot of corresponding size,
Then casting single crystal silicon ingot is processed, the casting single crystal silicon wafer of size needed for obtaining client.It is complete in step S130 cutting
After version seed crystal, full page seed crystal is mechanically polished, corrects the size of full page seed crystal, and guarantees the dimensional accuracy of full page seed crystal.
It is in one embodiment, described that the full page seed crystal is surface-treated further include:
S142: etch step carries out chemical polishing to the full page seed crystal, dirty to remove the full page seed crystal face
Damage.
Corrosion treatment is carried out to the surface of full page seed crystal using chemically polishing method, remove full page seed crystal face contamination and
Loss layer guarantees the flatness of full page seed crystal face, then, then full page seed crystal is layed in the bottom of crucible.In step S130
After cutting full version seed crystal, first full page seed crystal is mechanically polished, corrects the size of full page seed crystal, and guarantees full page seed crystal
Then dimensional accuracy carries out chemical polishing to the full page seed crystal after polishing, full page seed crystal is finally layed in crucible bottom again.It can
Selection of land can corrode full page seed crystal using chemical solution.
In one embodiment, the chemical solution of the etch step be nitric/hydrofluoric solution or potassium hydroxide/
Sodium hydroxide solution.Certainly, in other embodiments of the invention, chemical solution can also can carry out etch polishing for other
Solution.
Further, it is 10 μm~100 μm that the etch step, which removes the surface thickness of the full page seed crystal,.In this way
It can guarantee the surface smoothness of full page seed crystal, be grown convenient for silicon material.
In one embodiment, the recovery method further includes following steps:
S160: going flaw-piece step, and the flaw-piece of the full page seed crystal is removed before being surface-treated, described whole to remove
The contact portion of version seed crystal edges and the crucible.
After preparing casting single crystal silicon ingot using full page seed crystal, the edge of casting single crystal silicon ingot can be contacted with crucible, this part
It will affect the quality of full page seed crystal and casting single crystal silicon ingot, therefore, need to remove this part when in use, that is, flaw-piece is gone to walk
Suddenly.Operated it should be understood that can integrally carry out flaw-piece to casting single crystal silicon ingot, can also to the full page seed crystal after cutting with
And the casting single crystal silicon ingot of remainder carries out flaw-piece respectively and operates.In the present embodiment, mainly full page seed crystal is gone
Flaw-piece operation, to remove full page seed crystal and crucible contact portion, in this way, subsequent full page seed crystal prepares the process of casting single crystal silicon ingot
In can guarantee the quality of casting single crystal silicon ingot.
Further, the hem width range of the full page seed crystal removal flaw-piece is 20mm~30mm.It can guarantee full page in this way
The lattice quality of seed crystal, and then guarantee the quality of the casting single crystal silicon ingot of preparation.
Referring to Fig. 1 and Fig. 3, in one embodiment, the recovery method further includes following steps:
S170: detecting step, before the full page seed crystal is layed in the crucible bottom, to surface treated institute
Full page seed crystal is stated to test.
Full page seed crystal after S140 step process is detected the bottom that can be just routed to crucible, detecting step
For examining full page seed crystal, mainly judge whether the quality of full page seed crystal qualified, and detection full page seed crystal size whether
It is qualified.After the completion of detection, judge that whether satisfaction prepares the requirement of casting single crystal silicon ingot to full page seed crystal, can such as prepare satisfaction and want
It asks, then recycles full page seed crystal, and full page seed crystal is layed in the bottom of crucible.In this manner it is ensured that the matter of casting single crystal silicon ingot
Amount, while can prepare and meet the casting single crystal silicon ingot that growth requires.
In one embodiment, the detecting step includes:
S171: quality inspection steps detect the surface of the full page seed crystal with the presence or absence of defect, and the detection full page
The surface of seed crystal is internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the full page seed crystal.
It should be understood that quality inspection steps are mainly carried out by estimation mode.It first passes through range estimation and checks full page seed crystal
Appearance surfaces it is whether intact, surface with the presence or absence of brilliant flower, whether there is the defects of chipping；If intact, pass through strong illumination
Full page seed crystal, the defects of checking inside full page seed crystal with the presence or absence of brilliant flower, to judge whether full page seed crystal can recycle use.It can
Selection of land, in the present embodiment, can irradiate full page seed crystal by flashlight certainly, can also in other embodiments of the invention
The quality of full page seed crystal is detected by special detection device and detection lamp.
It is detected according to quality of the step S171 to full page seed crystal, whether the quality to judge full page seed crystal is qualified.If
Qualification, full page seed crystal can recycle, then full page seed crystal can be layed in the bottom of crucible, be used to prepare casting monocrystalline silicon
Ingot；If unqualified, full page seed crystal is not recycled.
In one embodiment, the detecting step further include:
S172: size detection step detects the practical hem width size and actual (real) thickness size of the full page seed crystal；
If the practical hem width size is located in the range of default hem width size, the actual (real) thickness size is located at default thickness
It spends in size range, then shows the size qualification of the full page seed crystal.
The size of full page seed crystal can be detected using size detection equipment.It should be understood that default hem width size
The hem width size of casting single crystal silicon wafer needed for referring to client.If full page seed crystal is oversized, after preparing casting single crystal silicon ingot,
The edge to casting single crystal silicon ingot is also needed to handle, to guarantee the hem width size of casting single crystal silicon wafer, if full page seed crystal
It is undersized, then it can not prepare the casting single crystal silicon wafer of size needed for client.So by size detection step to full page seed crystal
Hem width size detected, in order to prepare the casting single crystal silicon ingot of suitable dimension.
Preset thickness size then refers to the thickness of seed layer.If the thickness of full page seed crystal is excessively thin, its casting single crystal is influenced
The growth of silicon ingot, if after the thickness of full page seed crystal, since the production cost of monocrystalline silicon is higher, and then will increase casting monocrystalline silicon
The production cost of ingot.
Further, the range of the default hem width size is the default hem width size ± 0.5mm.The preset thickness
The range of size is the preset thickness size ± 2mm.
It should be understood that the range of default hem width size is default hem width size ± 0.5mm, i.e., the model of default hem width size
The range of ± the 0.5mm of the hem width size of casting single crystal silicon wafer needed for then referring to client in enclosing.The range of preset thickness size
It is preset thickness size ± 2mm, i.e., then refers to the range of the thickness ± 2mm of seed layer in the range of preset thickness size.
That is, detecting the hem width ruler of full page seed crystal when detecting using size of the step S172 to full page seed crystal
Whether very little deviation is in the range of ± 0.5mm, and whether thickness deviation is in the range of ± 2mm.
As shown in figure 4, (a) in Fig. 4 is casting single crystal silicon ingot, first in the bottom of casting single crystal silicon ingot, wiring is Fig. 4
In (b), and the bottom of casting single crystal silicon ingot is cut, and obtains the full page seed crystal in (c) of Fig. 4, full page seed crystal is laid with
In crucible bottom, (d) in Fig. 4 is obtained.At this point it is possible to the silicon material of molten condition is set on seed layer, it is single with preparation casting
Crystal silicon ingot.
The recovery method of casting single crystal seed crystal of the invention, using the seed crystal integral cutting in casting monocrystalline silicon ingot butt portion as
Full page seed crystal recycling, so that seed crystal cost is substantially reduced, and the effect reused is preferable, to reduce casting monocrystalline silicon
The cost of ingot.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the record scope of this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of recovery method of casting single crystal seed crystal, which comprises the steps of:
Seed crystal splicing is layed in crucible bottom, forms seed layer；
Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and make to melt
The silicon material for melting state is grown on the seed layer along the crystal structure of the seed crystal, and casting single crystal silicon ingot is obtained；
The casting single crystal silicon ingot is taken out, and casting monocrystalline silicon ingot butt portion is obtained along cutting perpendicular to the direction of growth
To full page seed crystal；
The full page seed crystal is surface-treated；
The full page seed crystal after surface treatment is layed in the crucible bottom, is formed for growing the casting single crystal silicon ingot
The seed layer.
2. the recovery method of casting single crystal seed crystal according to claim 1, which is characterized in that described to the full page seed
Crystalline substance carries out surface treatment
Mechanical treatment step mechanically polishes the full page seed crystal, to guarantee the dimensional accuracy of the full page seed crystal.
3. the recovery method of casting single crystal seed crystal according to claim 1, which is characterized in that described to the full page seed
Crystalline substance is surface-treated further include:
Etch step carries out chemical polishing to the full page seed crystal, is stained with removing the full page seed crystal face.
4. the recovery method of casting single crystal seed crystal according to claim 3, which is characterized in that the etch step
Chemical solution be nitric/hydrofluoric solution or potassium hydroxide/sodium hydroxide solution.
5. the recovery method of casting single crystal seed crystal according to claim 3, which is characterized in that the etch step
The surface thickness for removing the full page seed crystal is 10 μm~100 μm.
6. the recovery method of casting single crystal seed crystal according to any one of claims 1 to 5, which is characterized in that described time
Receiving method further includes following steps:
Flaw-piece step is gone, the flaw-piece of the full page seed crystal is removed before being surface-treated, to remove full page seed crystal side
The contact portion of edge and the crucible.
7. the recovery method of casting single crystal seed crystal according to claim 6, which is characterized in that the full page seed crystal removal
The hem width range of flaw-piece is 20mm~30mm.
8. the recovery method of casting single crystal seed crystal according to any one of claims 1 to 5, which is characterized in that described time
Receiving method further includes following steps:
Detecting step, before the full page seed crystal is layed in the crucible bottom, to the surface treated full page seed
Crystalline substance is tested；
Quality inspection steps detect the surface of the full page seed crystal with the presence or absence of defect, and the table of the detection full page seed crystal
Face is internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the full page seed crystal.
9. the recovery method of casting single crystal seed crystal according to claim 8, which is characterized in that the detecting step also wraps
It includes:
Size detection step detects the practical hem width size and actual (real) thickness size of the full page seed crystal；
If the practical hem width size is located in the range of default hem width size, the actual (real) thickness size is located at preset thickness ruler
In very little range, then show the size qualification of the full page seed crystal.
10. the recovery method of casting single crystal seed crystal according to claim 9, which is characterized in that the default hem width ruler
Very little range is the default hem width size ± 0.5mm；
The range of the preset thickness size is the preset thickness size ± 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910796901.9A CN110424049A (en) | 2019-08-27 | 2019-08-27 | The recovery method of casting single crystal seed crystal |
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| CN112813495A (en) * | 2019-11-18 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Method for recycling seed crystals for monocrystalline silicon-like ingot casting |
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