CN110373711A - The recovery method of casting single crystal seed crystal - Google Patents
The recovery method of casting single crystal seed crystal Download PDFInfo
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- CN110373711A CN110373711A CN201910797473.1A CN201910797473A CN110373711A CN 110373711 A CN110373711 A CN 110373711A CN 201910797473 A CN201910797473 A CN 201910797473A CN 110373711 A CN110373711 A CN 110373711A
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- seed crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of recovery method of casting single crystal seed crystal, includes the following steps: seed crystal splicing being layed in crucible bottom, forms seed layer；Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and grow the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, obtains casting single crystal silicon ingot；The casting single crystal silicon ingot is taken out, and evolution processing is carried out to the casting single crystal silicon ingot, obtains multiple side's ingots；At the seed crystal position in each side's ingot butt portion, along cutting perpendicular to the direction of growth to side's ingot, reuse seed crystal is obtained；The reuse seed crystal is closely layed in the crucible bottom after treatment, as the seed layer.Seed crystal cost is greatly reduced in this way, thereby reduces the production cost of casting single crystal silicon ingot.
Description
Technical field
The present invention relates to casting monocrystalline silicon ingot casting fields, more particularly to a kind of recovery method of casting single crystal seed crystal.
Background technique
In current solar energy materials market, crystalline silicon is mainly wrapped in occupation of absolute predominance, crystal silicon solar product
Monocrystalline silicon and polysilicon are included, wherein impurity is low with the content of defect in monocrystalline silicon battery, high conversion efficiency；But preparation process is multiple
Miscellaneous, high to the purity requirement of raw material, production cost is higher；There are a large amount of crystal boundaries, highdensity dislocation inside polycrystal silicon cell
And impurity, transfer efficiency is than single crystal battery low efficiency 1.5% or so, lower production costs, and cost performance is higher.
And casting monocrystalline silicon is new product that is a kind of while having monocrystalline silicon high conversion efficiency and polysilicon high performance-price ratio.Casting
Monocrystalline silicon is made with certain crystal orientation, crystal boundary is few, dislocation density is low, and battery uses alkali making herbs into wool, and transfer efficiency compares polysilicon
Battery significantly improves, or even close to monocrystalline silicon battery, production cost is significantly lower than monocrystalline silicon, has important commercial value.
Currently, needing to be laid with a certain amount of single crystal seed in casting monocrystalline silicon production process and being located at crucible bottom, by adding
Heat, the fusing control endless running down of seed crystal, control temperature gradient, so that silicon material crystal is grown on the seed crystal of endless running down.
But casting single crystal silicon ingot is needed using a large amount of seed crystal, these seed crystals need to draw by pulling technique, therefore seed crystal cost
Height increases the manufacturing cost of casting single crystal silicon ingot.
Summary of the invention
Based on this, it is necessary to for making the higher problem of casting single crystal silicon ingot manufacturing cost because seed crystal is at high cost at present,
A kind of recovery method of casting single crystal seed crystal reducing cost is provided.
Above-mentioned purpose is achieved through the following technical solutions:
A kind of recovery method of casting single crystal seed crystal, includes the following steps:
Seed crystal splicing is layed in crucible bottom, forms seed layer；
Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and
It grows the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, obtains casting monocrystalline silicon
Ingot；
The casting single crystal silicon ingot is taken out, and evolution processing is carried out to the casting single crystal silicon ingot, obtains multiple side's ingots；
At the seed crystal position in each side's ingot butt portion, along being cut perpendicular to the direction of growth to side's ingot, obtain
Reuse seed crystal；
The reuse seed crystal is closely layed in the crucible bottom after treatment, as single for growing the casting
The seed layer of crystal silicon ingot.
The cutting number of plies in side's ingot butt portion is 1 layer~5 layers in one of the embodiments,.
Side's ingot is cut using scroll saw or band saw in one of the embodiments,.
In one of the embodiments, the reuse seed crystal with a thickness of 20mm~30mm.
The recovery method further includes following steps in one of the embodiments:
Surface treatment before the reuse seed crystal is layed in the crucible bottom, carries out surface to the reuse seed crystal
Processing.
The surface treatment step includes: in one of the embodiments,
Mechanical treatment step mechanically polishes the reuse seed crystal, to guarantee the dimensional accuracy of the reuse seed crystal.
The surface treatment step in one of the embodiments, further include:
Etch step carries out chemical polishing to the reuse seed crystal, is stained with removing the reuse seed crystal face.
The recovery method further includes following steps in one of the embodiments:
Detecting step, before the reuse seed crystal is layed in the crucible bottom, to surface treated described time
It is tested with seed crystal.
The detecting step includes: in one of the embodiments,
Quality inspection steps detect the surface of the reuse seed crystal with the presence or absence of defect, and the detection reuse seed crystal
Surface or internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the reuse seed crystal.
The detecting step includes: in one of the embodiments,
Size detection step detects the practical hem width size and actual (real) thickness size of the reuse seed crystal；
If the practical hem width size is located in the range of default hem width size, the actual (real) thickness size is located at default thickness
It spends in size range, then shows the size qualification of the reuse seed crystal.
The detecting step in one of the embodiments, further include:
Angle detecting step detects the crystal orientation deflection angle in the reuse seed crystal using crystal orientation angle sensing device.
After adopting the above technical scheme, the present invention at least has the following technical effect that
The recovery method of casting single crystal seed crystal of the invention will form multiple side's ingots after casting single crystal silicon ingot evolution,
It cuts to obtain reuse seed crystal at the seed crystal position of each side's ingot, then, reuse seed crystal is closely layed in crucible bottom as seed
Crystal layer, and silicon material is set to prepare next casting single crystal silicon ingot on seed layer, and so on realize the weight of casting seed crystal
It is multiple to utilize.Efficiently solving makes the higher problem of casting single crystal silicon ingot manufacturing cost because of seed crystal cost at present, greatly reduces
Seed crystal cost thereby reduces the production cost of casting single crystal silicon ingot.
Detailed description of the invention
Fig. 1 is the flow chart of the recovery method of casting single crystal seed crystal of the invention；
Fig. 2 is the flow chart of reuse seed crystal face processing step；
Fig. 3 is the flow chart of reuse seed crystal detecting step；
Fig. 4 is the recycling schematic diagram of the casting single crystal seed crystal of one embodiment of the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, by the following examples, it and combines attached
Figure, is further elaborated the recovery method of casting single crystal of the invention seed crystal.It should be appreciated that described herein
Specific examples are only used to explain the present invention, is not intended to limit the present invention.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", " left side ",
The orientation of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside", " clockwise ", " counterclockwise " or position are closed
System is merely for convenience of description of the present invention and simplification of the description to be based on the orientation or positional relationship shown in the drawings, rather than indicates
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitation of the present invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
The present invention provides a kind of recovery methods of casting single crystal seed crystal.The recovery method is for recycling casting monocrystalline silicon
The seed crystal of ingot realizes the recycling of seed crystal.When preparing casting single crystal silicon ingot, prepared by the seed crystal that recycling can be used, greatly
Seed crystal cost is reduced greatly, thereby reduces the production cost of casting single crystal silicon ingot.
Referring to Fig. 1, in the present invention, the recovery method of casting single crystal seed crystal includes the following steps:
S110: seed crystal splicing is layed in crucible bottom, forms seed layer.
In this step, the paving mode of seed crystal is configured according to the size of crucible, for example, can be according to 4 × 4 gusts
The modes such as column, 5 × 5 arrays or 6 × 6 arrays, which are spliced, is layed in crucible bottom.Further, by the Mosaic face phase of seed of single crystal silicon
It is mutually fitted close and be layed in crucible bottom, and the splicing seams of seed crystal are mutually aligned, guarantees that the gap between adjacent seed crystal is most
It is possible small, and guarantee the of uniform size consistent of each gap.In this manner it is ensured that splicing in casting single crystal silicon ingot preparation process
Locate well-grown, avoids generating crystal division, guarantee the quality of casting single crystal silicon ingot.
Optionally, seed crystal derives from monocrystal rod, and certainly, in other embodiments of the invention, seed crystal be may also originate from
Monocrystalline fragment etc..
S120: being arranged silicon material above the seed layer, controls the temperature of the crucible, makes the endless fine melt of the seed crystal
Change, and grow the silicon material of molten condition on the seed layer along the crystal structure of the seed crystal, is cast
Monocrystal silicon.
In this step, the silicon material on seed layer upper layer can under the control of crucible temperature, along seed crystal crystal structure into
Row growth, and then obtain casting single crystal silicon ingot.Optionally, the mode of setting silicon material is unrestricted in principle above seed layer, can
Think the silicon material of solid, or the silicon material of molten condition.Illustratively, the silicon material of solid is set above seed layer, it is right
Crucible heating melts the silicon material of solid, at this point, the silicon material of molten condition is set to above seed layer.Illustratively, another
The silicon material that solid is heated at crucible, prepares the silicon material of molten condition, the silicon material of the molten condition is poured above seed layer, this
When, the silicon material of molten condition is set to above seed layer.
Moreover, the endless running down of seed layer is made to refer to that part seed crystal melts in seed layer, part seed crystal is non-fusible.Also,
The step of controlling the temperature of crucible includes: that the temperature edge controlled in crucible is gradually increasing shape perpendicular to crucible bottom upwardly direction
At temperature gradient, so that the silicon material of molten condition continues up on seed of single crystal silicon layer along the crystal structure of seed of single crystal silicon
Growth, obtains casting single crystal silicon ingot.
S130: the casting single crystal silicon ingot is taken out, and evolution processing is carried out to the casting single crystal silicon ingot, obtains multiple sides
Ingot.
The casting single crystal silicon ingot prepared is taken out from crucible, then by silicon ingot excavation machine to casting single crystal silicon ingot into
The processing of row evolution.It should be understood that here in one embodiment, for the equipment for carrying out evolution processing to silicon ingot at present, belonging to
The prior art will not repeat them here.The size of casting single crystal silicon ingot evolution is set with according to client's size actually required
It sets.Multiple side's ingots are formed after casting single crystal silicon ingot evolution, the bottom of square ingot is seed layer, reuse can be recycled, square ingot
Top can prepare casting single crystal silicon wafer, can be applied to prepare solar battery.
It is worth explanation, during evolution, it is also necessary to which, to the flaw-piece of removal casting single crystal silicon ingot, general flaw-piece is
20mm-30mm, it is therefore an objective to casting single crystal silicon ingot and crucible contact portion are removed, to guarantee the quality of casting single crystal silicon ingot.
S140: at the seed crystal position in each side's ingot butt portion, side's ingot is cut perpendicular to the direction of growth in edge,
Obtain reuse seed crystal.
It should be understood that silicon material is grown along the vertical direction, then under in the horizontal direction cutting the seed crystal in square ingot butt portion
As reuse seed crystal.Reuse seed crystal may be reused, for as the seed crystal for preparing casting single crystal silicon ingot.Returning after cutting
It is almost the same with the shape of seed crystal and the cross sectional shape of square ingot, in this way, seed crystal is less prone to chipping unfilled corner etc. in cutting process
Damage phenomenon guarantees the quality of reuse seed crystal.
S150: being closely layed in the crucible bottom for the reuse seed crystal after treatment, as described for growing
The seed layer of casting single crystal silicon ingot.
Reuse seed crystal is closely layed in the bottom of crucible, is used as seed layer again.Optionally, reuse seed crystal be laid with to
It is one layer few.In the present embodiment, reuse seed crystal is laid with one layer, and certainly, in other embodiments of the invention, reuse seed crystal can be with
It is laid with two layers of even more multilayer.The quantity of reuse seed crystal is selected according to the size of crucible, for example, can be according to 4 × 4 gusts
The modes such as column, 5 × 5 arrays or 6 × 6 arrays are closely layed in crucible bottom.
After the completion of seed layer is laid with, above-mentioned steps S110 and S120 are repeated, next casting single crystal silicon ingot is obtained.So
Afterwards, casting single crystal silicon ingot is subjected to the evolution side of obtaining ingot according to step S130, and cut according to step S140 other side ingot
To reuse seed crystal, the reuse again of seed crystal is realized.Then, reuse seed crystal is routed to the bottom of crucible again.It is so past
It is multiple, it realizes the recycling of seed crystal, casting single crystal silicon ingot is made, reduces the cost of seed crystal, and then reduce casting single crystal silicon ingot
Production cost.
It is multiple by being formed after casting single crystal silicon ingot evolution using the recovery method of the casting single crystal seed crystal of above-described embodiment
Square ingot cuts to obtain reuse seed crystal at the seed crystal position of each side's ingot, then, reuse seed crystal is closely layed in crucible bottom
Silicon material is set to prepare next casting single crystal silicon ingot as seed layer, and on seed layer, and so on realizes casting seed
Brilliant recycling.Efficiently solving makes the higher problem of monocrystal silicon manufacturing cost because seed crystal is at high cost at present, drops significantly
Low seed crystal cost, and then reduce the production cost of casting single crystal silicon ingot.Also, using the casting single crystal of reuse seed crystal preparation
The quality of silicon ingot is suitable using obtained casting single crystal silicon ingot quality for the first time with seed of single crystal silicon.
In one embodiment, the cutting number of plies in side's ingot butt portion is 1 layer~5 layers.Due to the seed crystal at different location
Upgrowth situation is different, for example, growth shape of the upgrowth situation of the seed crystal of crucible central region better than the seed crystal of crucible marginal position
Condition.That is, the seed crystal thickness in square ingot butt portion is inconsistent, so the cutting number of plies of reuse seed crystal is inconsistent at different location,
While guaranteeing the quality of reuse seed crystal, seed crystal as much as possible is recycled, to reduce cost.It should be understood that each side's ingot
Bottom carried out at seed crystal cutting at least one layer of reuse seed crystal can be obtained.
In one embodiment, side's ingot is cut using scroll saw or band saw.Optionally, square ingot can use Buddha's warrior attendant
Stone line saw or band-saw diamond are cut, to guarantee the cut quality of reuse seed crystal.
In one embodiment, the reuse seed crystal with a thickness of 20mm~30mm.Crucible is layed in using reuse seed crystal
Seed layer, which is formed, on bottom influences the growth of its casting single crystal silicon ingot if the thickness of reuse seed crystal is excessively thin, if the thickness of reuse seed crystal
Thickness is spent, since the production cost of monocrystalline silicon is higher, and then will increase the production cost of casting single crystal silicon ingot.Therefore, reuse seed
Brilliant thickness is more suitable within the scope of 20mm~30mm.
In one embodiment, the recovery method further includes following steps:
S160: surface treatment before the reuse seed crystal is layed in the crucible bottom, carries out the reuse seed crystal
Surface treatment.
The surface of reuse seed crystal after scroll saw or with saw cut can have certain roughness and dimensional discrepancy, to return
After being surface-treated with seed crystal, the size of each reuse seed crystal can be made consistent, and guarantee certain dimensional accuracy.This
Sample, after reuse seed crystal is layed in crucible bottom, it is ensured that it closely arranges between reuse seed crystal, the Mosaic face of adjacent reuse seed crystal
It is mutually fitted close arrangement, and splicing seams are mutually aligned, and guarantee that gap is as small as possible, and each gap size is consistent, to protect
Demonstrate,prove the quality of casting single crystal silicon ingot.
After step S140 has cut reuse seed crystal, reuse seed crystal is surface-treated, so that reuse seed crystal keeps one
Then reuse seed crystal after surface treatment is layed in the bottom of crucible, to form seed layer, for making by fixed dimensional accuracy
Standby casting single crystal silicon ingot.
Referring to Fig. 1 and Fig. 2, in one embodiment, the surface treatment step includes:
S161: mechanical treatment step mechanically polishes the reuse seed crystal, to guarantee the size of the reuse seed crystal
Precision.
Reuse seed crystal is mechanically polished using flour milling machine, the size of reuse seed crystal is corrected, so that each reuse seed crystal
Size it is consistent, while guaranteeing the dimensional accuracy of reuse seed crystal.In this way, when reuse seed crystal is layed in crucible bottom, it is ensured that
It is closely connected between adjacent reuse seed crystal.After step S140 has cut reuse seed crystal, reuse seed crystal is mechanically polished,
The size of reuse seed crystal is corrected, and guarantees the dimensional accuracy of reuse seed crystal.
In one embodiment, the surface treatment step further include:
S162: etch step carries out chemical polishing to the reuse seed crystal, dirty to remove the reuse seed crystal face
Damage.
Corrosion treatment is carried out to the surface of reuse seed crystal using chemically polishing method, remove reuse seed crystal face contamination and
Loss layer guarantees the flatness of reuse seed crystal face, then, then reuse seed crystal is closely layed in the bottom of crucible.In step
After rapid S140 has cut reuse seed crystal, first reuse seed crystal is mechanically polished, corrects the size of reuse seed crystal, and guarantees reuse
Then the dimensional accuracy of seed crystal carries out chemical polishing to the reuse seed crystal after polishing, reuse seed crystal is finally layed in crucible again
Bottom.
It is alternatively possible to be corroded using chemical solution to reuse seed crystal, illustratively, chemical solution is nitric acid/hydrogen
Fluorspar acid solution or potassium hydroxide/sodium hydroxide solution, certainly, in other embodiments of the invention, chemical solution may be used also
The solution of etch polishing can be carried out for other.Chemical solution remove reuse seed crystal face with a thickness of 10 μm~100 μm.
Referring to Fig. 1 and Fig. 3, in one embodiment, the recovery method further includes following steps:
S170: detecting step, before the reuse seed crystal is layed in the crucible bottom, to surface treated institute
Reuse seed crystal is stated to test.
Reuse seed crystal after S160 step process is detected the bottom that can be just routed to crucible, detecting step
For examining reuse seed crystal, mainly judge whether the quality of reuse seed crystal is qualified, whether the size for detecting reuse seed crystal is qualified,
And judge the radial deflection angle of reuse seed crystal.After the completion of detection, judge whether satisfaction prepares casting monocrystalline silicon to reuse seed crystal
The requirement of ingot can such as be prepared, then reuse seed crystal is closely layed in the bottom of crucible.In this manner it is ensured that casting single crystal
The quality of silicon ingot, while can prepare and meet the casting single crystal silicon ingot that growth requires.
In one embodiment, the detecting step includes:
S171: quality inspection steps detect the surface of the reuse seed crystal with the presence or absence of defect, and the detection reuse
The surface of seed crystal is internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the reuse seed crystal.
It should be understood that quality inspection steps are mainly carried out by estimation mode.It first passes through range estimation and checks reuse seed crystal
Appearance surfaces it is whether intact, surface with the presence or absence of brilliant flower, whether there is the defects of chipping；If intact, pass through strong illumination
Reuse seed crystal, the defects of checking inside reuse seed crystal with the presence or absence of brilliant flower, to judge whether reuse seed crystal can recycle use.It can
Selection of land, in the present embodiment, can irradiate reuse seed crystal by flashlight certainly, can also in other embodiments of the invention
The quality of reuse seed crystal is detected by special detection device and detection lamp.
It is detected according to quality of the step S171 to reuse seed crystal, whether the quality to judge reuse seed crystal is qualified.If
Qualification, then reuse seed crystal can be layed in the bottom of crucible, be used to prepare casting single crystal silicon ingot；If unqualified, reuse seed crystal
It cannot be used for preparing casting single crystal silicon ingot.
In one embodiment, the detecting step includes:
S172: size detection step detects the practical hem width size and actual (real) thickness size of the reuse seed crystal；
If the practical hem width size is located in the range of default hem width size, actual (real) thickness size is located at preset thickness ruler
In very little range, then show the size qualification of the reuse seed crystal.
The size of reuse seed crystal can be detected using size detection equipment.It should be understood that default hem width size
The hem width size of casting single crystal silicon wafer needed for referring to client.The range of default hem width size is default hem width size ± 0.5mm,
The range of ± the 0.5mm of the hem width size of casting single crystal silicon wafer needed for then referring to client in the range of i.e. default hem width size.
If reuse seed crystal is oversized, after preparing casting single crystal silicon ingot, it is also necessary to the edge of casting single crystal silicon ingot is handled, with
Guarantee that the hem width size of casting single crystal silicon wafer can not prepare the casting of size needed for client if reuse seed crystal is undersized
Monocrystalline silicon piece.So being detected by hem width size of the size detection step to reuse seed crystal, in order to prepare suitable dimension
Casting single crystal silicon ingot.
Preset thickness size then refers to the thickness of seed layer, and the range of preset thickness size is preset thickness size ± 2mm,
Then refer to the range of the thickness ± 2mm of seed layer in the range of preset thickness size.
That is, detecting the hem width ruler of reuse seed crystal when detecting using size of the step S172 to reuse seed crystal
Whether very little deviation is in the range of ± 0.5mm, and whether thickness deviation is in the range of ± 2mm.
In one embodiment, the detecting step further include:
S173: angle detecting step detects the crystal orientation deflection angle in the reuse seed crystal using crystal orientation angle sensing device
Degree.
Angle detecting step S173 is used to detect the crystal orientation deflection angle in reuse seed crystal, in this way, can be according to reuse seed
Brilliant crystal orientation deflection angle is guaranteed to be laid with the seed layer of crucible bottom with meeting the preparation requirement of required casting single crystal silicon ingot
The quality of casting single crystal silicon ingot.
As shown in figure 4, (a) in Fig. 4 is casting single crystal silicon ingot, first casting single crystal silicon ingot is routed and is cut in order to subsequent
It cuts, (b) in as Fig. 4；After handling again the casting single crystal silicon ingot trimming skin of wiring, evolution processing is carried out, multiple sides are obtained
Ingot, (c) in as Fig. 4；(d) in Fig. 4 then shows that the bottom wiring of other side's ingot is cut, and obtains returning in (e) of Fig. 4
With seed crystal, reuse seed crystal is layed in crucible bottom, obtains (f) in Fig. 4.At this point it is possible to which molten is arranged on seed layer
The silicon material of state, to prepare casting single crystal silicon ingot.
The recovery method of casting single crystal seed crystal of the invention is in multiple side's ingots using casting single crystal silicon ingot evolution, will be square
Ingot butt portion is uniformly cut into multiple reuse seed crystals and reuses as seed crystal, so that seed crystal cost is substantially reduced, to reduce casting
Make the cost of monocrystal silicon.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the record scope of this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of recovery method of casting single crystal seed crystal, which comprises the steps of:
Seed crystal splicing is layed in crucible bottom, forms seed layer；
Silicon material is set above the seed layer, controls the temperature of the crucible, makes the endless running down of the seed crystal, and make to melt
The silicon material for melting state is grown on the seed layer along the crystal structure of the seed crystal, and casting single crystal silicon ingot is obtained；
The casting single crystal silicon ingot is taken out, and evolution processing is carried out to the casting single crystal silicon ingot, obtains multiple side's ingots；
At the seed crystal position in each side's ingot butt portion, along cutting perpendicular to the direction of growth to side's ingot, reuse is obtained
Seed crystal；
The reuse seed crystal is closely layed in the crucible bottom after treatment, as growing the casting monocrystalline silicon
The seed layer of ingot.
2. the recovery method of casting single crystal seed crystal according to claim 1, which is characterized in that side's ingot butt portion is cut
Cutting the number of plies is 1 layer~5 layers.
3. the recovery method of casting single crystal seed crystal according to claim 1, which is characterized in that use line to side's ingot
Saw or band saw are cut.
4. the recovery method of casting single crystal seed crystal according to claim 1, which is characterized in that the thickness of the reuse seed crystal
Degree is 20mm~30mm.
5. the recovery method of casting single crystal seed crystal according to any one of claims 1 to 4, which is characterized in that described time
Receiving method further includes following steps:
Surface treatment, before the reuse seed crystal is layed in the crucible bottom, is surface-treated the reuse seed crystal.
6. the recovery method of casting single crystal seed crystal according to claim 5, which is characterized in that the surface treatment step
Include:
Mechanical treatment step mechanically polishes the reuse seed crystal, to guarantee the dimensional accuracy of the reuse seed crystal.
7. the recovery method of casting single crystal seed crystal according to claim 6, which is characterized in that the surface treatment step
Further include:
Etch step carries out chemical polishing to the reuse seed crystal, is stained with removing the reuse seed crystal face.
8. the recovery method of casting single crystal seed crystal according to any one of claims 1 to 4, which is characterized in that described time
Receiving method further includes following steps:
Detecting step, before the reuse seed crystal is layed in the crucible bottom, to the surface treated reuse seed
Crystalline substance is tested.
9. the recovery method of casting single crystal seed crystal according to claim 8, which is characterized in that the detecting step packet
It includes:
Quality inspection steps detect the surface of the reuse seed crystal with the presence or absence of defect, and the table of the detection reuse seed crystal
Face is internal with the presence or absence of brilliant flower；
If it is not, then showing the up-to-standard of the reuse seed crystal.
10. the recovery method of casting single crystal seed crystal according to claim 8, which is characterized in that the detecting step packet
It includes:
Size detection step detects the practical hem width size and actual (real) thickness size of the reuse seed crystal；
If the practical hem width size is located in the range of default hem width size, the actual (real) thickness size is located at preset thickness ruler
In very little range, then show the size qualification of the reuse seed crystal.
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| CN114248355A (en) * | 2021-12-15 | 2022-03-29 | 江西新余新材料科技研究院 | Method for judging lateral crystal orientation deflection angle of monocrystalline silicon piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104790026A (en) * | 2015-04-30 | 2015-07-22 | 江西赛维Ldk太阳能高科技有限公司 | Reutilization method of seed crystals for casting monocrystals |
| US20150203986A1 (en) * | 2011-12-01 | 2015-07-23 | Rec Solar Pte. Ltd. | Production of mono-crystalline silicon |
| CN107523858A (en) * | 2017-07-26 | 2017-12-29 | 晶科能源有限公司 | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150203986A1 (en) * | 2011-12-01 | 2015-07-23 | Rec Solar Pte. Ltd. | Production of mono-crystalline silicon |
| CN104790026A (en) * | 2015-04-30 | 2015-07-22 | 江西赛维Ldk太阳能高科技有限公司 | Reutilization method of seed crystals for casting monocrystals |
| CN107523858A (en) * | 2017-07-26 | 2017-12-29 | 晶科能源有限公司 | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114248355A (en) * | 2021-12-15 | 2022-03-29 | 江西新余新材料科技研究院 | Method for judging lateral crystal orientation deflection angle of monocrystalline silicon piece |
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Application publication date: 20191025 |