CN110416869A - The method for improving Tm:YAP laser output power using ion implanting - Google Patents
The method for improving Tm:YAP laser output power using ion implanting Download PDFInfo
- Publication number
- CN110416869A CN110416869A CN201910601027.9A CN201910601027A CN110416869A CN 110416869 A CN110416869 A CN 110416869A CN 201910601027 A CN201910601027 A CN 201910601027A CN 110416869 A CN110416869 A CN 110416869A
- Authority
- CN
- China
- Prior art keywords
- ion implanting
- yap
- output power
- laser
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
- H01S3/0957—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by high energy nuclear particles
Abstract
The method for improving Tm:YAP laser output power using ion implanting, is related to solid state laser, belongs to laser field, in order to meet the growth requirement of 2 micron waveband solid state lasers.The method of the present invention for improving Tm:YAP solid state laser output power using ion implanting are as follows: ion implanting is carried out to Tm:YAP crystal.The ion implanting is realized by the way of radiated by gamma-ray.Radioactive source using Co60 as the gamma ray.Change the output power of solid state laser by changing irradiation dose.It is demonstrated experimentally that the Slop efficiency of Tm:YAP laser can be made to improve at least 5% using method provided by the invention.
Description
Technical field
The present invention relates to solid state lasers, belong to laser field.
Background technique
The output power of the laser (such as Tm:YAP solid state laser) of solid state laser especially 2 micron wavebands is one
One of the hot spot of straight people's research.In order to improve the output power of solid state laser, common method has the doping for changing crystal
Concentration, optimal cavity structure, raising pump power etc..
Summary of the invention
The purpose of the invention is to meet the growth requirement of 2 micron waveband solid state lasers, propose a kind of using ion
The method that injection improves Tm:YAP laser output power.
The method of the present invention for improving Tm:YAP solid state laser output power using ion implanting are as follows: to Tm:YAP
Crystal carries out ion implanting.
Further, the ion implanting is realized by the way of radiated by gamma-ray.
Further, the radioactive source using Co60 as the gamma ray.
Further, change the output power of solid state laser by changing irradiation dose.
Currently, all concentrating on electric property, internal structure and the resilient nature of crystal to the research of ion implanting crystal
Several respects, to laser power and transfer efficiency aspect there has been no research and report, the present invention compensates for the blank of this technology.
Under normal temperature conditions, according to the level structure of Tm and transition figure, Tm system is main during forming laser output
The energy transfer process wanted are as follows:
1、3H6Tm on energy level3+By absorbing 795nm pump photon, excitation is extremely3H4Energy level；
2、3H4、3H5、3F4The downward transition of spontaneous radiation occurs for the particle on energy level；
3、3H4Tm on energy level3+It is in surrounding3H6Tm on energy level3+Relaxation process occurs, this makes a pumping light
Son can produce two upper energy level particles；
4、3F4Particle on energy level with (3H6,3H5) and (3H4,3H6) up-conversion effect occurs between particle on energy level, make
3F4Energy level population is reduced；
5、3F4Particle on energy level is arrived by stimulated radiation3H6The output of 2 mu m waveband lasers is formed on energy level.
The optical materials such as optical crystal, glass and oxide, inside there are a certain number of point defects, as vacancy and
Gap atom, the possible trapped electron of these point defects or hole, cause additional visible absorption, commonly referred to as colour center.
The wave band of laser output is different, is because active ions are different.Only host material is capable of providing and active ions
Element similar in radius could provide suitable doping case for active ions.
Crystal after irradiation, absorption of crystal 795nm light enhancing, makes3F4Energy level population increases,3F4Particle on energy level is logical
Stimulated radiation is crossed to transit to3H6On energy level, the 2 mu m waveband lasers output of formation is just enhanced, therefore laser output power increases
Greatly, efficiency is improved.
It is demonstrated experimentally that the Slop efficiency of Tm:YAP laser can be made to improve at least 5% using method provided by the invention.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Tm:YAP laser in embodiment one；
Fig. 2 is the Tm ion energy level structure and transition figure of the Tm:YAP laser in embodiment one Jing Guo ion implanting.
Specific embodiment
Specific embodiment 1: illustrating present embodiment in conjunction with Fig. 1 and Fig. 2.It is infused described in present embodiment using ion
Enter to improve the method for Tm:YAP solid state laser output power are as follows: ion implanting is carried out to Tm:YAP crystal.
The ion implanting is realized by the way of radiated by gamma-ray.
Radioactive source using Co60 as the gamma ray.
Change the output power of solid state laser by changing irradiation dose.
Present embodiment compared the output power of the Tm:YAP laser before ion implanting and after ion implanting.It builds
It is as shown in Figure 1 to test optical path.The output wavelength of pumping source is 795nm, and the core diameter of output optical fibre is 400um.Focusing system includes
Collimating mirror f1 and focus lamp f2, collimating mirror f1 focal length are 25mm, and the laser alignment of the diverging for exporting pumping source is parallel
Light beam；Focus lamp f2 focal length is 50mm, for the collimated light beam to be focused on gain media.Gain media is dense using adulterating
The Tm:YAP crystal that degree is 3%, crystal both ends polish and are coated with the highly transmissive film of 795nm.Crystal is placed on above heat sink, heat sink bottom
Portion carries out temperature control to crystal by thermostatted water.Input mirror M1 is concavees lens, and plane side plates the highly transmissive of 795nm wavelength
Film, concave side plate 2um highly reflecting films, concave 150mm.Outgoing mirror M2 is flat mirror, transmitance 2%.Resonant cavity
The a length of 30mm of chamber.The output power of the laser is measured using power meter.In order to ensure the accuracy of measurement, need in outgoing mirror
Increase by 2 microns of high reflective mirror M3 between M2 and power meter, it is therefore an objective to filter pump light.Through survey calculation, in pump power 14W
Under, Slop efficiency 22.5%.
Then ion implanting is carried out to gain substance Tm:YAP crystal, selecting Co60 (cobalt source) is the gamma that radioactive source generates
Ray irradiates Tm:YAP crystal, radiation dose rate 1rad/s, accumulated dose 350krad.Measurement swashs again after irradiation
Optical output power, from Figure 2 it can be seen that with non-irradiated Tm:YAP crystal phase ratio, Tm after cobalt source irradiance method of the invention:
YAP crystal laser Slop efficiency is 27.5%, and front and back has increased 5% to specific efficiency.Increasing or reduce irradiation dose can be with
Increased output power is controlled.
Claims (4)
1. the method for improving Tm:YAP solid state laser output power using ion implanting, which is characterized in that Tm:YAP crystal
Carry out ion implanting.
2. the method according to claim 1, wherein the ion implanting is real by the way of radiated by gamma-ray
It is existing.
3. according to the method described in claim 2, it is characterized in that, radioactive source using Co60 as the gamma ray.
4. according to the method in claim 2 or 3, which is characterized in that change solid state laser by changing irradiation dose
Output power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601027.9A CN110416869A (en) | 2019-07-04 | 2019-07-04 | The method for improving Tm:YAP laser output power using ion implanting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601027.9A CN110416869A (en) | 2019-07-04 | 2019-07-04 | The method for improving Tm:YAP laser output power using ion implanting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110416869A true CN110416869A (en) | 2019-11-05 |
Family
ID=68360277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910601027.9A Pending CN110416869A (en) | 2019-07-04 | 2019-07-04 | The method for improving Tm:YAP laser output power using ion implanting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110416869A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187384A (en) * | 1984-09-13 | 1986-05-02 | Seiko Epson Corp | Laminated multi-wavelength semiconductor laser device |
| CN2689255Y (en) * | 2004-04-02 | 2005-03-30 | 谢舒平 | Gamma ray detecting imagers |
| CN101373306A (en) * | 2008-09-19 | 2009-02-25 | 电子科技大学 | Solid body THz radiation source as excitation based on acoustic wave |
| CN101409424A (en) * | 2007-10-12 | 2009-04-15 | 中国科学院安徽光学精密机械研究所 | Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof |
| US20110159617A1 (en) * | 2002-04-11 | 2011-06-30 | Kulite Semiconductor Products, Inc. | Dual layer color-center patterned light source |
| CN204497564U (en) * | 2015-03-17 | 2015-07-22 | 哈尔滨工程大学 | A kind of laser realizing 2 mu m waveband broad tuning narrow-linewidth lasers and export |
-
2019
- 2019-07-04 CN CN201910601027.9A patent/CN110416869A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187384A (en) * | 1984-09-13 | 1986-05-02 | Seiko Epson Corp | Laminated multi-wavelength semiconductor laser device |
| US20110159617A1 (en) * | 2002-04-11 | 2011-06-30 | Kulite Semiconductor Products, Inc. | Dual layer color-center patterned light source |
| CN2689255Y (en) * | 2004-04-02 | 2005-03-30 | 谢舒平 | Gamma ray detecting imagers |
| CN101409424A (en) * | 2007-10-12 | 2009-04-15 | 中国科学院安徽光学精密机械研究所 | Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof |
| CN101373306A (en) * | 2008-09-19 | 2009-02-25 | 电子科技大学 | Solid body THz radiation source as excitation based on acoustic wave |
| CN204497564U (en) * | 2015-03-17 | 2015-07-22 | 哈尔滨工程大学 | A kind of laser realizing 2 mu m waveband broad tuning narrow-linewidth lasers and export |
Non-Patent Citations (2)
| Title |
|---|
| D. SUGAK 等: "Optical and Luminescence Properties of YAlO3 - Tm Crystals", 《CRYST. RES. TECHNOL.》 * |
| DUNLU SUN 等: "Gamma-ray irradiation effect on the absorption and luminescence spectra of Nd:GGG and Nd:GSGG laser crystals", 《JOURNAL OF LUMINESCENCE》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Koester | 9A4-Laser action by enhanced total internal reflection | |
| WO2016025765A1 (en) | Asymmetric pwg with asymmetric cooling | |
| Gacheva et al. | Disk Yb: KGW amplifier of profiled pulses of laser driver for electron photoinjector | |
| JP2017168662A (en) | Sunlight excitation laser device | |
| US20180254596A1 (en) | Terahertz laser, terahertz source and use of such a terahertz laser | |
| Garanin et al. | Channel of a high-power laser fusion Luch facility emitting 3.3-kJ, and 4-ns pulses | |
| JP2020038363A (en) | Method and mechanism for generating terahertz radiation scalable in relation to energy | |
| CN106483096A (en) | The system and method that laser excitation air plasma produces high intensity THz wave | |
| CN100505441C (en) | Active element for laser source and laser source comprising such active element | |
| CN110416869A (en) | The method for improving Tm:YAP laser output power using ion implanting | |
| CN107611755B (en) | System and method for generating high-intensity terahertz waves by double plasmas with adjustable spacing | |
| CN109510056B (en) | A kind of while output the hollow laser of dual wavelength | |
| CN111370988A (en) | 1.55 mu m wave band Q-switched pulse laser | |
| US3414836A (en) | Q-switched laser | |
| CN110380330A (en) | Solid state laser and solid state laser output wavelength shift method based on ion implanting | |
| CN115084978A (en) | Multi-pass laser spectrum broadening optical system and method | |
| CN114114095A (en) | Magnetic measurement system based on diamond NV color center | |
| Li et al. | Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging | |
| CN109818252A (en) | Transverse pump laser | |
| US6600766B1 (en) | High average power laser using a transverse flowing liquid host | |
| RU2729064C1 (en) | Method of converting nuclear energy (energy of radioactive decay and/or fission) into optical energy and device for implementation thereof | |
| Bayramian et al. | High average power petawatt laser pumped by the mercury laser for fusion materials engineering | |
| Almeida | Advances in solar-pumped laser efficiency and brightness | |
| CN103337787A (en) | Sunlight pumped semiconductor nanowire laser | |
| CN110233418B (en) | Pulse width adjustable short pulse laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191105 |