CN110380330A - Solid state laser and solid state laser output wavelength shift method based on ion implanting - Google Patents
Solid state laser and solid state laser output wavelength shift method based on ion implanting Download PDFInfo
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- CN110380330A CN110380330A CN201910601028.3A CN201910601028A CN110380330A CN 110380330 A CN110380330 A CN 110380330A CN 201910601028 A CN201910601028 A CN 201910601028A CN 110380330 A CN110380330 A CN 110380330A
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- solid state
- state laser
- ion implanting
- output wavelength
- laser output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Abstract
Solid state laser and solid state laser output wavelength shift method based on ion implanting, are related to wavelength tuning technology.Purpose is to provide for a kind of new technology that solid state laser output wavelength can be made to translate.Solid state laser of the present invention based on ion implanting, including pumping source, focusing system, resonant cavity and gain media, the gain media are the crystal by ion implanting.Solid state laser output wavelength shift method of the present invention based on ion implanting are as follows: ion implanting is carried out to the gain media of the solid state laser.The ion implanting is realized by the way of radiated by gamma-ray.Radioactive source using Co60 as the gamma ray.Change the amplitude of solid state laser output wavelength translation by changing irradiation dose.The present invention can make the output wavelength range of drift of solid state laser reach nm magnitude, reduce the dependence to temperature control device, extend the use scope of solid state laser.
Description
Technical field
The present invention relates to the output wavelength tunable technologies of solid state laser.
Background technique
Tunable laser using more and more extensive, such as measurement of concetration of various substances etc. plays an important role.
So far, a wide range of tuning of wavelength relies primarily on thermal tuning.But thermal tuning depends on temperature control device, increases system
Complexity, and wavelength tuning range is small, limits the use scope of tunable solid laser.
Summary of the invention
The purpose of the invention is to provide a kind of new technology that solid state laser output wavelength can be made to translate, mention
A kind of solid state laser and solid state laser output wavelength shift method based on ion implanting out.
Solid state laser of the present invention based on ion implanting, including pumping source, focusing system, resonant cavity and gain
Medium, the gain media are the crystal by ion implanting.
Further, the ion implanting is realized by the way of radiated by gamma-ray.
Further, the radioactive source of the gamma ray is Co60.
Solid state laser output wavelength shift method of the present invention based on ion implanting are as follows: to the Solid State Laser
The gain media of device carries out ion implanting.
Further, the ion implanting is realized by the way of radiated by gamma-ray.
Further, the radioactive source using Co60 as the gamma ray.
Further, change the translational movement of solid state laser output wavelength by changing irradiation dose.
Currently, all concentrating on electric property, internal structure and the resilient nature of crystal to the research of ion implanting crystal
Several respects not yet have been reported that laser spectrum.It is proposed by the present invention that solid state laser output wave long hair is made based on ion implanting
The new technology that life is moved, can make the output wavelength range of drift of solid state laser reach nm magnitude, reduce to temperature control device
Dependence, extend the use scope of solid state laser.
In addition, cosmic space has a large amount of radiation, it will lead to laser output wavelength and drift about, influence the ginseng of spacecraft
Number.The new technology provided according to the present invention can take corresponding measure to inhibit the wave length shift of laser in spacecraft, meanwhile,
The in-orbit service reliability of calculating and raising spacecraft also for spacecraft parameter has highly important practical meaning in engineering.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the solid state laser described in embodiment one based on ion implanting；
Fig. 2 be Tm:YAP solid state laser output wavelength (right side of dotted line) in embodiment one based on ion implanting with not
The comparison diagram of Tm:YAP solid state laser output wavelength (left side of dotted line) by ion implanting；
Fig. 3 is the Tm ion energy level structure and jump of the Tm:YAP solid state laser in embodiment two Jing Guo ion implanting
Move figure.
Specific embodiment
Specific embodiment 1: illustrating present embodiment in conjunction with Fig. 1 and Fig. 2.It is infused described in present embodiment based on ion
The solid state laser entered, including pumping source, focusing system, resonant cavity and gain media, the gain media are to infuse by ion
The crystal entered.
The ion implanting is realized by the way of radiated by gamma-ray.
The radioactive source of the gamma ray is Co60.
Tm:YAP crystal emission spectra is wider, spectral region 1700-2050nm, is advantageously implemented tuning laser output.With
For Tm:YAP laser, present embodiment compared the output wave of the Tm:YAP laser before ion implanting and after ion implanting
It is long.The experiment optical path built is as shown in Figure 1.The output wavelength of pumping source is 795nm, and the core diameter of output optical fibre is 400um.It focuses
System includes collimating mirror f1 and focus lamp f2, and collimating mirror f1 focal length is 25mm, the laser quasi of the diverging for exporting pumping source
It is directly collimated light beam；Focus lamp f2 focal length is 50mm, for the collimated light beam to be focused on gain media.Gain media is adopted
The Tm:YAP crystal for being 3% with doping concentration, crystal both ends polish and are coated with the highly transmissive film of 795nm.Crystal is placed on heat sink
Face, heat sink bottom carry out temperature control to crystal by thermostatted water.Input mirror M1 is concavees lens, and plane side plates 795nm wave
Long highly transmissive film, concave side plate 2um highly reflecting films, concave 150mm.Outgoing mirror M2 is flat mirror, and transmitance is
2%.The a length of 30mm of resonator.Using the output wavelength of the spectrometer measurement solid state laser.To avoid solid state laser defeated
The excessive damage spectrometer of power out can increase attenuator M3, the light transmittance of attenuator M3 between outgoing mirror M2 and spectrometer
It is 1%.The central wavelength of solid state laser output is 1992.68nm known to measurement.
Then ion implanting is carried out to gain substance Tm:YAP crystal, selecting Co60 (cobalt source) is the gamma that radioactive source generates
Ray irradiates Tm:YAP crystal, radiation dose rate 1rad/s, accumulated dose 400krad.Measurement swashs again after irradiation
Light output wavelength, from Figure 2 it can be seen that the Tm:YAP crystal laser output with non-irradiated Tm:YAP crystal phase ratio, by irradiation
Central wavelength be 1997.76nm, front and back compares red shift of wavelength about 5nm.It follows that irradiation gain substance of the invention
The method for changing laser output wavelength can change in orientation of the wavelength of laser output.By increasing or reducing irradiation dose,
The change output wavelength that can be quantified.
Specific embodiment 2: embodiment is described with reference to Fig. 3.Based on the solid of ion implanting described in this embodiment party
Laser output wavelength shift method are as follows: ion implanting is carried out to the gain media of the solid state laser.
The ion implanting is realized by the way of radiated by gamma-ray.
Radioactive source using Co60 as the gamma ray.
Change the translational movement of solid state laser output wavelength by changing irradiation dose.
By taking Tm:YAP laser as an example, under normal temperature conditions, according to the level structure of Tm and transition figure, Tm system is being formed
During laser exports, main energy transfer process are as follows:
1、3H6Tm on energy level3+By absorbing 795nm pump photon, excitation is extremely3H4Energy level；
2、3H4、3H5、3F4The downward transition of spontaneous radiation occurs for the particle on energy level；
3、3H4Tm on energy level3+It is in surrounding3H6Tm on energy level3+Relaxation process occurs, this makes a pumping light
Son can produce two upper energy level particles；
4、3F4Particle on energy level with (3H6,3H5) and (3H4,3H6) up-conversion effect occurs between particle on energy level, make
?3F4Energy level population is reduced；
5、3F4Particle on energy level is arrived by stimulated radiation3H6The output of 2 mu m waveband lasers is formed on energy level.
The optical materials such as optical crystal, glass and oxide, inside there are a certain number of point defects, as vacancy and
Gap atom, the possible trapped electron of these point defects or hole, cause additional visible absorption, commonly referred to as colour center.
Crystal after ion implanting (such as x ray irradiation x), the transition of energy level are changed.Due to sharp
In the matrix ion irradiation process of luminescent crystal, irradiation ion passes through two almost its energy of independent process losses: (1) and atom
Elastic collision (core energy loss) occurs for core；(2) it collides with the circumnuclear electronics of atom, and then leads to electron excitation or electricity
From (electron energy loss).Elastic collision positioned at ion path end leads to the reduction of irradiation sample phsyical density；Meanwhile electricity
Son excitation or ionization cause sample near-surface region refractive index to change.Electronics after ray radiation, around the atom of matrix
Change, and then affect the variation of electric field, make Tm ion from3F4It transits to3H6A stark energy level, output laser hair
Drift is given birth to.After overtesting, discovery has the drift of the laser output wavelength of 5nm.
Claims (7)
1. the solid state laser based on ion implanting, including pumping source, focusing system, resonant cavity and gain media, feature exist
In the gain media is the crystal by ion implanting.
2. solid state laser according to claim 1, which is characterized in that the ion implanting is using radiated by gamma-ray
Mode is realized.
3. solid state laser according to claim 2, which is characterized in that the radioactive source of the gamma ray is Co60.
4. the solid state laser output wavelength shift method based on ion implanting, which is characterized in that the solid state laser
Gain media carries out ion implanting.
5. solid state laser output wavelength shift method according to claim 4, which is characterized in that the ion implanting is adopted
It is realized with the mode of radiated by gamma-ray.
6. solid state laser output wavelength shift method according to claim 5, which is characterized in that using Co60 as institute
State the radioactive source of gamma ray.
7. solid state laser output wavelength shift method according to claim 5 or 6, which is characterized in that by changing spoke
Change the translational movement of solid state laser output wavelength according to dosage.
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| CN201910601028.3A CN110380330A (en) | 2019-07-04 | 2019-07-04 | Solid state laser and solid state laser output wavelength shift method based on ion implanting |
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| CN201910601028.3A CN110380330A (en) | 2019-07-04 | 2019-07-04 | Solid state laser and solid state laser output wavelength shift method based on ion implanting |
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| CN110380330A true CN110380330A (en) | 2019-10-25 |
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| CN103451735A (en) * | 2013-08-09 | 2013-12-18 | 中国科学院上海硅酸盐研究所 | Main group V-VI metal compound laser crystal and preparation method thereof |
| CN204497564U (en) * | 2015-03-17 | 2015-07-22 | 哈尔滨工程大学 | A kind of laser realizing 2 mu m waveband broad tuning narrow-linewidth lasers and export |
| CN109066282A (en) * | 2018-07-12 | 2018-12-21 | 哈尔滨工程大学 | A kind of device and method for realizing superpower pulse output |
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| US20030193978A1 (en) * | 2002-04-11 | 2003-10-16 | Kurtz Anthony D. | Dual layer color-center patterned light source |
| CN101060228A (en) * | 2007-05-10 | 2007-10-24 | 中国科学院上海光学精密机械研究所 | Medium infrared solid laser of semiconductor laser pump |
| CN101063228A (en) * | 2007-05-10 | 2007-10-31 | 中国科学院安徽光学精密机械研究所 | Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+ |
| CN103451735A (en) * | 2013-08-09 | 2013-12-18 | 中国科学院上海硅酸盐研究所 | Main group V-VI metal compound laser crystal and preparation method thereof |
| CN204497564U (en) * | 2015-03-17 | 2015-07-22 | 哈尔滨工程大学 | A kind of laser realizing 2 mu m waveband broad tuning narrow-linewidth lasers and export |
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