CN101060228A - Intermediate infrared solid laser of semiconductor laser pump - Google Patents
Intermediate infrared solid laser of semiconductor laser pump Download PDFInfo
- Publication number
- CN101060228A CN101060228A CN 200710040505 CN200710040505A CN101060228A CN 101060228 A CN101060228 A CN 101060228A CN 200710040505 CN200710040505 CN 200710040505 CN 200710040505 A CN200710040505 A CN 200710040505A CN 101060228 A CN101060228 A CN 101060228A
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- crystal
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- infrared solid
- middle infrared
- mirror
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000007787 solid Substances 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 65
- 238000007747 plating Methods 0.000 claims description 9
- HTVQRQIXKLLKMT-UHFFFAOYSA-N zinc chromium(3+) selenium(2-) Chemical compound [Cr+3].[Zn+2].[Se-2] HTVQRQIXKLLKMT-UHFFFAOYSA-N 0.000 claims description 9
- QTXKZIDBSVPPQB-UHFFFAOYSA-N [Y].[Tm] Chemical compound [Y].[Tm] QTXKZIDBSVPPQB-UHFFFAOYSA-N 0.000 claims description 8
- 238000005057 refrigeration Methods 0.000 claims description 5
- 239000011651 chromium Substances 0.000 abstract description 23
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract description 23
- 238000005086 pumping Methods 0.000 abstract description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052775 Thulium Inorganic materials 0.000 abstract 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000002277 temperature effect Effects 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
A middle infrared solid laser for pumping of semiconductor laser is composed of semiconductor laser, focusing lens, input lens, laser medium and output lens in turn on a light path, and features that the laser medium is a bonded crystal formed by the combination of thulium doped yttrium aluminate (Tm: YAP) crystal and chromium doped zinc selenide (Cr: ZnSe) crystal, and the interface between said crystal and crystal forms Brewster angle with the axial direction of resonant cavity of said laser.
Description
Technical field
The present invention relates to all solid state laser, particularly a kind of middle infrared solid laser of diode-end-pumped.
Background technology
Subjects such as growing environment, engineering, medical science, biological and chemical make 1～3 μ m ultrashort pulse and metal-doped crystal ultra broadband continuous wave laser obtain great advance.The infrared solid laser more and more is applied in fields such as gas detecting, remote sensing, communication, ophthalmology medical science, neurosurgery in the super broad pulse of metal ion mixing.
The chromium zinc selenide Cr:ZnSe crystal of mixing of super wide absorption bands has some very outstanding features: high emission cross section σ
Em=1.3 * 10
-18Cm
2, negligible excited state absorption, extraordinary chemistry and mechanical stability, the coefficient of heat conduction close with sapphire.These characteristics make this material as the middle infrared laser and the Amplifier Gain medium of diode pump-coupling very big potentiality be arranged.Cr
2+: ZnSe has high emission cross section, short radiation lifetime, and little crystal division zone, its centre wavelength has wide absorption band at region of ultra-red near 1.8 μ m, and transmitted bandwidth is between 2～3.4 μ m.
Cr
2+The ZnSe laser obtains laser output, and the selection of pump light source is vital.Because Cr
2+The absworption peak of ion and at present can provide the laser of effective pumping very few at this wave band near 1.75 μ m, and these pump light sources mainly contain: tuning range is at the Co of 1.6～2.1 μ m
2+: MgF
2Laser, 1.9～2.1 μ m mix Tm
3+, Ho
3+Laser, the er-doped laser of～1.6 μ m, the NaCl:OH color center laser of～1.6 μ m, the Raman frequency shift Nd:YAG laser of～1.6 μ m, the Raman fiber lasers of～1.6 μ m, the InGaAsP/InP semiconductor laser of 1.6～1.9 μ m.
The Cr:ZnSe laser of semiconductor laser array pump-coupling faces a significant contradiction at present: when directly using diode-end-pumped, domestic obtainable semiconductor laser wavelength is less than 1.6 μ m, the gain coefficient of pump light in the ZnSe crystal is little, thereby laser output power is lower.And when using the relatively large laser pumping of other wavelength, when power improves, must cause the increase of laser overall volume and lose its part advantage.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of middle infrared solid laser of diode-end-pumped is provided, this laser should have lower, the simple for structure advantage of cost, solves the contradiction that present ZnSe laser faces effectively.
Technical solution of the present invention is as follows:
A kind of middle infrared solid laser of diode-end-pumped, on a light path, form by semiconductor laser, condenser lens, input mirror, laser medium, outgoing mirror successively, it is characterized in that described laser medium is that (be designated hereinafter simply as the bonding crystal that the Cr:ZnSe crystal bonding constitutes together, the described thulium yttrium aluminate crystal of mixing becomes Brewster's angle with the linkage interface of mixing the chromium zinc selenide crystal with the axis direction of this laser resonant cavity by mixing thulium yttrium aluminate (being designated hereinafter simply as Tm:YAP) crystal and mixing the chromium zinc selenide.
Described input end face plating the anti-reflection film:＜0.5%@790nm that mixes the thulium yttrium aluminate crystal, implication be this anti-reflection film be centre wavelength at 790nm, reflectivity is less than 0.5% (following identical, as not repeat for this reason); Described output end face plating the anti-reflection film:＜0.5%@2400nm that mixes the chromium zinc selenide crystal.
Described input mirror plated film:＜0.5%@790nm,＞99.5%@1900nm﹠amp; 2400nm, this rete has 790nm anti-reflection, and reflectivity is less than 0.5%, and high anti-to 1900nm and 2400nm wavelength, reflectivity is greater than 99.5%.Described outgoing mirror plating high-reflecting film: 99.5%@790nm﹠amp; 1900nm, 95%@2400nm.
Described bonding crystal places the semiconductor refrigeration module.
The joint face of described Tm:YAP crystal and Cr:ZnSe crystal is processed into Brewster's angle, fully enters in the Cr:ZnSe crystal with the laser that guarantees the 1900nm that the Tm:YAP crystal produces.
Described Brewster's angle determines that according to Brewster light is n from refractive index
1Medium directive refractive index be n
2Medium the time, when incidence angle satisfies: tan i
b=n
2/ n
1The time, when promptly incidence angle was Brewster's angle, reverberation just became the complete polarised light of direction of vibration perpendicular to the plane of incidence, and refract light still is a partial poolarized light.
On input mirror, plate high-reflecting film (99.5%@2400nm), on outgoing mirror, plate high-reflecting film (95%@2400nm), guaranteed that like this laser of wavelength 2400nm forms vibration between input mirror and outgoing mirror.Be to guarantee of the outgoing of 2400nm wavelength laser at the Cr:ZnSe crystal, the output end face plating anti-reflection film of crystal (＜0.5%@2400nm).
The present invention compared with prior art has following advantage:
1, the pumping source of the InGaAsP/InP semiconductor laser of common wavelength 790nm, 808nm can be directly used, and its wavelength low problem of gain coefficient in the Cr:ZnSe crystal needn't be worried as the Cr:ZnSe crystal.
2, with doping Tm
2+YAP crystal and doping Cr
2+The ZnSe crystal link together by diffusion interlinked method, realized that 1900nm and 2400nm laser amplify, pump light and laser vibrate in same resonant cavity, make laser structure simplify greatly.
3, the present invention have simple in structure, cost is lower, efficiency of light energy utilization advantages of higher, has improved the power output of semiconductor laser pump-coupling Cr:ZnSe laser effectively.
Description of drawings
Fig. 1, the laser light path figure of the embodiment of the invention.
Fig. 2, the crystal connection layout of the embodiment of the invention.
Fig. 3, the three-view diagram of Tm:YAP crystal in the embodiment of the invention (face, overlook, left view).
Fig. 4, the three-view diagram of Cr:ZnSe crystal in the embodiment of the invention (face, overlook, left view).
Fig. 5, the refrigeration module stereogram in the embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the laser light path figure of the embodiment of the invention.As seen from the figure, the middle infrared solid laser of diode-end-pumped of the present invention, on a light path, form by semiconductor laser 1, condenser lens 2, plane input mirror 3, laser medium 4, flat output mirror 5 successively, it is characterized in that described laser medium 4 is by mixing the thulium yttrium aluminate crystal and mix the bonding crystal that the chromium zinc selenide crystal is bonded together and constitutes, mixing the thulium yttrium aluminate crystal and become Brewster's angle with the linkage interface of mixing the chromium zinc selenide crystal with the axis direction of described resonant cavity.
With the plane that two laser crystal joint faces are processed into special angle, make the pump light of 1900nm when the grain boundary, most of light enters in the Cr:ZnSe crystal by refraction.The refractive index of 1900nm wavelength in the Tm:YAP crystal is n
1=1.9, the refractive index in the Cr:ZnSe crystal is n
2=2.4, be tan i according to the Brewster incidence angle
b=n
2/ n
1, obtaining the bonding face of two blocks of laser crystals and the angle of axis direction is 38.4 °, and ZnSe crystal output end face angle is 76.7 °, and laser vertical is in the outgoing of Cr:ZnSe crystal end-face.As shown in Figure 2.
Carry out coating film treatment on recombination laser crystal both ends of the surface behind the bonding and input, the output minute surface:
1.Tm:YAP crystal input end face plating anti-reflection film:＜0.5%@790nm
2.Cr:ZnSe crystal output end face plating anti-reflection film:＜0.5%@2400nm
3. input mirror plated film:＜0.5%@790nm,＞99.5%@1900nm﹠amp; 2400nm
4. outgoing mirror plates high-reflecting film: 99.5%@790nm﹠amp; 1900nm, 95%@2400nm
Described bonding crystal places the semiconductor refrigeration module.Use the semiconductor refrigerating module that crystal is cooled off temperature control, replaced huge water-cooling system: use two semi-circular groove red coppers heat sink, crystal is placed in the middle circular recess, punching placement thermistor or thermocouple are monitored crystal temperature effect in heat sink, heat sink below is by the bonding thermoelectric module of heat conductive silica gel, and fix by the fin in screw and hot junction, as shown in Figure 5.The bonding crystal is placed in the circular recess, going up heat sink 6, down heat sink 7 is fixed on crystal middle by screw, 8 pairs of heat sink refrigeration of thermoelectric module, heat is transferred in the surrounding air by fin 9, placing 10 pairs of crystal temperature effects of thermocouple in heat sink monitors, and by the thermoelectric cooling controller thermoelectric module is controlled, crystal temperature effect is controlled near 20 ℃.Pump light source is used the InGaAsP/InP semiconductor laser array of wavelength as 790nm or 808nm, power output 40W, and strip light spots sees through input plane mirror 3 through lens 2 compression backs and focuses on Tm:YAP crystal front end face, the Tm in the excitation Tm:YAP crystal
3+, obtain the laser output of 1900nm.The laser of this 1900nm encourages Cr as the pump light source of Cr:ZnSe crystal
2+Ion obtains the laser output of 2400nm wavelength, and from the vertical outgoing of Cr:ZnSe crystal output end face, and vibration is amplified between outgoing mirror 5 and input mirror 3, and can select the output with 1～10% ratio.
Claims (4)
1, a kind of middle infrared solid laser of diode-end-pumped, on a light path, form by semiconductor laser (1), condenser lens (2), plane input mirror (3), laser medium (4), flat output mirror (5) successively, it is characterized in that described laser medium (4) is by mixing the thulium yttrium aluminate crystal and mix the bonding crystal that the chromium zinc selenide crystal is bonded together and constitutes, mixing the thulium yttrium aluminate crystal and become Brewster's angle with the linkage interface of mixing the chromium zinc selenide crystal with the axis direction of described resonant cavity.
2, middle infrared solid laser according to claim 1 is characterized in that described input end face plating the anti-reflection film:＜0.5%@790nm that mixes the thulium yttrium aluminate crystal; Described output end face plating the anti-reflection film:＜0.5%@2400nm that mixes the chromium zinc selenide crystal.
3, middle infrared solid laser according to claim 1 is characterized in that described input mirror (3) plated film:＜0.5%@790nm,＞99.5%@1900nm﹠amp; 2400nm, described outgoing mirror (5) plating high-reflecting film: 99.5%@790nm﹠amp; 1900nm, 95%@2400nm.
4, middle infrared solid laser according to claim 1 is characterized in that described bonding crystal places the semiconductor refrigeration module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100405050A CN100452577C (en) | 2007-05-10 | 2007-05-10 | Intermediate infrared solid laser of semiconductor laser pump |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100405050A CN100452577C (en) | 2007-05-10 | 2007-05-10 | Intermediate infrared solid laser of semiconductor laser pump |
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| Publication Number | Publication Date |
|---|---|
| CN101060228A true CN101060228A (en) | 2007-10-24 |
| CN100452577C CN100452577C (en) | 2009-01-14 |
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|---|---|---|---|
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| CN102354903A (en) * | 2011-10-18 | 2012-02-15 | 哈尔滨工程大学 | Air-spaced Fabry-Perot etalon and solid laser with same |
| CN103275723A (en) * | 2013-05-30 | 2013-09-04 | 中国科学院上海光学精密机械研究所 | Chrome iron ion double-doped complex selenium zinc sulfide laser material and preparation method thereof |
| CN103390853A (en) * | 2013-07-29 | 2013-11-13 | 哈尔滨工业大学 | Hectowatt-grade 1.9 mu m solid laser |
| CN103897692A (en) * | 2014-03-31 | 2014-07-02 | 中国科学院上海光学精密机械研究所 | Transition metal ion concentration gradient doped zinc sulfide or zinc selenide and preparation method thereof |
| CN104184041A (en) * | 2014-09-12 | 2014-12-03 | 青岛科技大学 | High-power intermediate-infrared cascading all-solid-state laser |
| CN105610042A (en) * | 2016-03-15 | 2016-05-25 | 青岛科技大学 | Mid-infrared solid laser and method for obtaining 3micron-band mid-infrared laser light |
| CN106374329A (en) * | 2016-12-01 | 2017-02-01 | 江苏师范大学 | Cross-polarization dual-wavelength synchronous resonation mode-locked laser |
| CN106961070A (en) * | 2016-05-27 | 2017-07-18 | 中国科学院福建物质结构研究所 | A kind of composite crystal, its preparation method and the application as solid laser material |
| CN110380330A (en) * | 2019-07-04 | 2019-10-25 | 哈尔滨工程大学 | Solid state laser and solid state laser output wavelength shift method based on ion implanting |
| WO2021012151A1 (en) * | 2019-07-22 | 2021-01-28 | 深圳大学 | Thulium-doped bulk solid-state laser |
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| US5851225A (en) * | 1994-03-18 | 1998-12-22 | Spectra Science Corporation | Photoemitting catheters and other structures suitable for use in photo-dynamic therapy and other applications |
| US20030039274A1 (en) * | 2000-06-08 | 2003-02-27 | Joseph Neev | Method and apparatus for tissue treatment and modification |
| CN1658451A (en) * | 2005-01-08 | 2005-08-24 | 中国科学院安徽光学精密机械研究所 | Polygonal heat bonding composite laser medium and preparation method thereof |
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- 2007-05-10 CN CNB2007100405050A patent/CN100452577C/en not_active Expired - Fee Related
Cited By (11)
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| CN102354903A (en) * | 2011-10-18 | 2012-02-15 | 哈尔滨工程大学 | Air-spaced Fabry-Perot etalon and solid laser with same |
| CN103275723A (en) * | 2013-05-30 | 2013-09-04 | 中国科学院上海光学精密机械研究所 | Chrome iron ion double-doped complex selenium zinc sulfide laser material and preparation method thereof |
| CN103275723B (en) * | 2013-05-30 | 2015-09-16 | 中国科学院上海光学精密机械研究所 | Ferrochrome ion is two mixes composite selenium zinc sulphide laserable material and preparation method thereof |
| CN103390853A (en) * | 2013-07-29 | 2013-11-13 | 哈尔滨工业大学 | Hectowatt-grade 1.9 mu m solid laser |
| CN103897692A (en) * | 2014-03-31 | 2014-07-02 | 中国科学院上海光学精密机械研究所 | Transition metal ion concentration gradient doped zinc sulfide or zinc selenide and preparation method thereof |
| CN104184041A (en) * | 2014-09-12 | 2014-12-03 | 青岛科技大学 | High-power intermediate-infrared cascading all-solid-state laser |
| CN105610042A (en) * | 2016-03-15 | 2016-05-25 | 青岛科技大学 | Mid-infrared solid laser and method for obtaining 3micron-band mid-infrared laser light |
| CN106961070A (en) * | 2016-05-27 | 2017-07-18 | 中国科学院福建物质结构研究所 | A kind of composite crystal, its preparation method and the application as solid laser material |
| CN106374329A (en) * | 2016-12-01 | 2017-02-01 | 江苏师范大学 | Cross-polarization dual-wavelength synchronous resonation mode-locked laser |
| CN110380330A (en) * | 2019-07-04 | 2019-10-25 | 哈尔滨工程大学 | Solid state laser and solid state laser output wavelength shift method based on ion implanting |
| WO2021012151A1 (en) * | 2019-07-22 | 2021-01-28 | 深圳大学 | Thulium-doped bulk solid-state laser |
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| CN100452577C (en) | 2009-01-14 |
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