CN107611755B - System and method for generating high-intensity terahertz waves by double plasmas with adjustable spacing - Google Patents

System and method for generating high-intensity terahertz waves by double plasmas with adjustable spacing Download PDF

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CN107611755B
CN107611755B CN201710953409.9A CN201710953409A CN107611755B CN 107611755 B CN107611755 B CN 107611755B CN 201710953409 A CN201710953409 A CN 201710953409A CN 107611755 B CN107611755 B CN 107611755B
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plasmas
terahertz
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laser
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CN107611755A (en
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张亮亮
张仕京
蒋广通
张存林
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Capital Normal University
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Abstract

The invention discloses a system and a method for generating high-intensity terahertz waves by double plasmas with adjustable spacing, wherein the system comprises a laser, an optical parametric amplifier, a chopper, a climbing device, a laser beam expander, a spatial light modulator, a reflector, a BBO crystal, a first off-axis parabolic reflector, a second off-axis parabolic reflector, a filter and a silicon wafer which are sequentially arranged along an optical path. According to the invention, the space and the space distribution between the double plasmas can be controlled by adjusting the space between the two Fresnel lens phase diagrams and the rotation angle of the symmetry axis loaded on the spatial light modulator, so that the intensity of the terahertz wave is improved, the energy and the polarization state of the terahertz wave can be accurately controlled, the blank in the technical field of high-intensity terahertz wave generation is made up, and the method has strong scientific research and practical application values; the system has the advantages of simple structure, low construction cost, easy maintenance, higher stability, stronger terahertz wave energy and wider spectrum, and is beneficial to spectrum measurement.

Description

System and method for generating high-intensity terahertz waves by double plasmas with adjustable spacing
Technical Field
The invention relates to the technical field of terahertz wave generation, in particular to a system and a method for generating high-intensity terahertz waves by double plasmas with adjustable spacing.
Background
The technology of focusing the ultra-short laser pulse in the surrounding air to directly generate terahertz wave has attracted wide attention in recent years, and the method can generate terahertz wave in a distance (which can be a few kilometers away), so the application prospect is very good.
When the ultra-short laser pulse with high energy is focused in the air, the air at the focus is ionized to form plasma, so that the formed mass power can form a large density difference between ionic charges and electronic charges, and the charge separation process can cause powerful electromagnetic transient phenomenon to occur, thereby radiating terahertz.
In the past experiments, a femtosecond laser is generally used to focus and excite air single plasma through a single lens so as to generate terahertz waves. However, the intensity of the generated terahertz waves is not very high, and the use requirement cannot be met. In 2007, y.liu et al found a method of generating terahertz waves by focusing dual plasmas with a single lens, but the spacing and spatial distribution of the dual plasmas could not be precisely controlled. In 2016, sun Wenfeng et al invented a method for modulating terahertz spectrum by using front and back dual optical fibers, but the intensity and the generation efficiency of terahertz waves are not significantly enhanced in this arrangement.
How to generate terahertz waves with higher intensity by using air plasma is an important research direction for those skilled in the art.
Disclosure of Invention
The invention provides a system and a method for generating high-intensity terahertz waves by double plasmas with adjustable spacing, which are used for generating terahertz waves with larger intensity by utilizing air plasmas.
In order to achieve the above object, the present invention provides a system for generating high-intensity terahertz waves by double plasmas with adjustable spacing, which comprises a laser, an optical parametric amplifier, a chopper, a climbing device, a laser beam expander, a spatial light modulator, a reflector, a BBO crystal, a first off-axis parabolic reflector, a second off-axis parabolic reflector, a filter and a silicon wafer, wherein the laser, the optical parametric amplifier, the chopper, the climbing device, the laser beam expander, the spatial light modulator, the reflector, the BBO crystal, the first off-axis parabolic reflector, the second off-axis parabolic reflector, the filter and the silicon wafer are sequentially arranged along an optical path,
the method comprises the steps that a laser emits laser with the wavelength of 800nm and the polarization direction of the laser in the vertical direction, then the laser passes through an optical parametric amplifier and outputs signal light with the wavelength of 1300nm or 1550nm, after the signal light passes through a chopper, the polarization direction of the signal light is converted into the horizontal direction by a climbing device, then the signal light is expanded by a laser beam expander and then enters a spatial light modulator, two Fresnel lens phase diagrams are arranged in the spatial light modulator, the two Fresnel lens phase diagrams are respectively provided with a first focus and a second focus, so that the incident light is converted into two parallel focused light rays and projected to a reflector and a BBO crystal, the two light beams emitted by the BBO crystal are respectively focused on excitation air at the first focus and the second focus to generate plasmas, and then a terahertz radiation source is formed, and the terahertz waves emitted by the terahertz radiation source are reflected by a first off-axis parabolic reflector and a second off-axis parabolic reflector and then sequentially pass through a filter plate and a silicon wafer, so that high-strength terahertz waves are obtained.
In one embodiment of the invention, the spacing between the two fresnel lens phase maps is equal to the spacing between the two plasmas.
In an embodiment of the present invention, the two fresnel lens phase diagrams are axisymmetric about a symmetry axis, the connection line of the two plasma centers is perpendicular to the symmetry axis, and the connection line of the two plasma centers rotates in the same direction and at the same angle along with the clockwise/counterclockwise rotation of the symmetry axis.
In one embodiment of the invention, the first focus and the second focus correspond to a first focal length and a second focal length, respectively, the first focal length and the second focal length being proportional to the length of the plasma and inversely proportional to the width.
In an embodiment of the invention, the system for generating the high-intensity terahertz waves by the double plasmas with adjustable spacing further comprises a terahertz wave intensity detector arranged at the rear end of the silicon wafer.
In an embodiment of the invention, the terahertz wave intensity detector is a pyroelectric detector or a high-intensity detector.
In one embodiment of the invention, the climber comprises a two-sided metal mirror.
In one embodiment of the invention, the frequency of the chopper is 15-20 Hz.
In one embodiment of the invention, the mirror is a metal mirror.
The invention also provides a method for generating high-intensity terahertz waves by using the double plasmas with adjustable spacing in the system, which comprises the following steps:
s1: the laser emits laser with the wavelength of 800nm and the polarization direction of the laser in the vertical direction;
s2: outputting signal light with the wavelength of 1300nm or 1550nm after laser passes through an optical parametric amplifier;
s3: after the signal light passes through the chopper and the climbing device, the polarization direction is converted into the horizontal direction;
s4: the signal light is expanded by a laser beam expander and then is incident to a spatial light modulator, two Fresnel lens phase diagrams are arranged in the spatial light modulator, and the two Fresnel lens phase diagrams are respectively provided with a first focus and a second focus so as to convert the incident light into two parallel focused light rays and project the two parallel focused light rays to a reflector and a BBO crystal;
s5: the two light beams emitted by the BBO crystal focus excitation air at the first focus and the second focus respectively to generate plasmas, so that a terahertz radiation source is formed;
s6: terahertz waves emitted by the terahertz radiation source are reflected by the first off-axis parabolic reflector and the second off-axis parabolic reflector and then sequentially pass through the filter plate and the silicon wafer, and then high-intensity terahertz waves are obtained.
The system and the method for generating the high-intensity terahertz waves by the double plasmas with adjustable spacing have the following advantages:
(1) By adjusting the interval between two Fresnel lens phase diagrams loaded on the spatial light modulator and the rotation angle of the symmetry axis, the interval and the spatial distribution between the double plasmas are controlled, and compared with the existing terahertz wave generation method, the intensity of the terahertz wave is improved, the energy and the polarization state of the terahertz wave can be accurately controlled, the blank in the technical field of the existing high-intensity terahertz wave generation is made up, and the method has strong scientific research and practical application values;
(2) The system has the advantages of simple structure, low construction cost, easy maintenance and higher stability;
(3) The generated terahertz wave energy is strong and has a wide spectrum, and is beneficial to spectrum measurement.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a system for generating high-intensity terahertz waves by using double plasmas with adjustable spacing;
FIG. 2 is a schematic diagram of two Fresnel lens phase diagrams axisymmetric about an axis of symmetry;
FIG. 3 is a schematic view of a climbing device;
FIG. 4a is a phase diagram of a single Fresnel lens in the present invention;
FIG. 4b is a Fresnel lens phase diagram with a 60 micron center-to-center spacing;
FIG. 5 is a graph of the spacing between two plasmas generated by a 1300nm laser versus the terahertz energy ratio between the two/single plasmas;
fig. 6 is a graph of the spacing between two plasmas generated by a 1550nm laser versus the terahertz energy ratio between the two/single plasmas.
Reference numerals illustrate: 1-a laser; 2-optical parametric amplifier; a 3-chopper; 4-climbing device; 5-a laser beam expander; a 6-spatial light modulator; 7-a mirror; 8-BBO crystals; 9-a first off-axis parabolic mirror; 10-a second off-axis parabolic mirror; 11-a filter; 12-silicon wafer; 13-terahertz wave intensity detector; A. B-Fresnel lens phase diagram; l-symmetry axis.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without any inventive effort, are intended to be within the scope of the invention.
Fig. 1 is a schematic structural diagram of a system for generating high-intensity terahertz waves by using dual plasmas with adjustable space, which is provided by the invention, as shown in fig. 1, the system for generating high-intensity terahertz waves by using dual plasmas with adjustable space, provided by the invention, comprises a laser 1, an optical parametric amplifier 2, a chopper 3, a climbing device 4, a laser beam expander 5, a spatial light modulator 6, a reflecting mirror 7, a BBO crystal 8, a first off-axis parabolic mirror 9, a second off-axis parabolic mirror 10, a filter 11 and a silicon wafer 12 which are sequentially arranged along a light path, wherein,
the laser 1 emits laser with 800nm wavelength and vertical polarization direction, then outputs signal light with 1300nm or 1550nm wavelength after passing through the optical parametric amplifier 2, the signal light is converted into horizontal direction by the climbing device 4 after passing through the chopper 3, then the signal light is expanded by the laser beam expander 5 and then is incident into the spatial light modulator 6, the spatial light modulator 6 is provided with two Fresnel lens phase diagrams A, B, the two Fresnel lens phase diagrams A, B are respectively provided with a first focus and a second focus, so that the incident light is converted into two parallel focused light rays and projected to the reflector 7 and the BBO crystal 8, the two light beams emitted by the BBO crystal 8 are respectively focused on the first focus and the second focus to excite air to generate a plasma, and then a terahertz radiation source is formed, and the terahertz waves emitted by the terahertz radiation source are reflected by the first off-axis parabolic reflector 9 and the second off-axis parabolic reflector 10 and then sequentially pass through the filter plate 11 and the silicon wafer 12, so that high-intensity terahertz waves are obtained.
The laser 1 may employ a femtosecond laser amplifier such as a femtosecond laser amplifier Spitfire manufactured by american Spectra-Physics company.
Fig. 4a is a single fresnel lens phase diagram according to the present invention, fig. 4b is a fresnel lens phase diagram with a 60 μm center-to-center spacing, and both fig. 4a and fig. 4b have a focal length of 160 mm.
In the present invention, as shown in fig. 1, the distance between the two plasmas is d, and the distance between the two fresnel lens phase maps A, B is equal to the distance d between the two plasmas, so that the distance between the two plasmas can be further controlled by controlling the distance between the two fresnel lens phase maps A, B. In addition, as shown in FIG. 2, the two Fresnel lens phase diagrams A, B are axisymmetric about a symmetry axis L, and the two Fresnel lens phase diagrams are centered on O 1 、O 2 The distance between the two centers is d, and the connecting line of the two centers is perpendicular to the symmetry axis L, and at this time, the connecting line of the two plasma centers formed by focusing rotates in the same direction and at the same angle along with the clockwise/anticlockwise rotation of the symmetry axis L. It should be noted that, in the present invention, reference to clockwise/counterclockwise should be viewed against the direction of the optical path or viewed along the direction of the optical path.
In the present invention, the first focal point and the second focal point respectively correspond to a first focal length and a second focal length, the first focal length and the second focal length are respectively the optical path distance between the spatial light modulator 6 and two plasmas, in the present invention, the sum of the optical path distance between the spatial light modulator 6 and the reflecting mirror 7, the optical path distance between the reflecting mirror 7 and the BBO crystal 8, and the optical path distance between the BBO crystal 8 and the plasmas, and the first focal length and the second focal length are directly proportional to the length of the plasmas and inversely proportional to the width.
As shown in fig. 1, the system for generating high-intensity terahertz waves by using the dual plasmas with adjustable space provided by the invention can further comprise a terahertz wave intensity detector 13 arranged at the rear end of the silicon wafer 12, wherein the terahertz wave intensity detector 13 can be a pyroelectric detector or a high-intensity detector.
Fig. 3 is a schematic view of a climbing device, as shown in fig. 3, the climbing device 4 includes two metal mirrors M1 and M2, the incident light is laser light with a vertical polarization direction (z axis), the laser light is reflected to the z direction through the mirror M1 with an angle of 45 degrees between one optical axis direction and the x direction, and then the reflected light beam propagates along the y direction through the mirror M2 with an angle of 45 degrees between the second optical axis direction and the y axis, and the polarization direction is horizontal (x axis).
The frequency of the chopper 3 used in the invention can be between 15 and 20Hz, and other parameters can be selected according to actual needs, and the invention is not limited to this. The reflecting mirror 7 can be a metal mirror.
Fig. 5 is a graph of the interval between two plasmas generated by 1300nm laser and the terahertz energy ratio between the two/single plasmas, and as shown in fig. 5, when the interval between the two plasmas is 0 micron, 20 micron, 40 micron, 60 micron and 80 micron, the corresponding terahertz energy ratios are 1, 0.99, 1.45, 0.15 and 0.14, respectively. Where the spacing "0" represents the case where a single fresnel lens phase diagram is used. It can be seen that when the laser wavelength is 1300nm, the interval between the two plasmas is controlled to be 40 microns, the obtained terahertz energy is maximum, and the terahertz energy is about 1.45 times of the terahertz energy generated by a single fresnel lens phase diagram when the interval is 0.
Fig. 6 is a graph of the spacing between two plasmas generated by 1550nm laser versus the terahertz energy ratio between the two/single plasmas, as shown in fig. 6, when the spacing between the two plasmas is 0 micron, 20 micron, 40 micron, 60 micron, 80 micron and 120 micron, respectively, the corresponding terahertz energy ratios are 1, 1.01, 2.28, 2.3, 0.81, 0.22, respectively. Where the spacing "0" represents the case where a single fresnel lens phase diagram is used. It can be seen that when the laser wavelength is 1550nm, the distance between the two plasmas is controlled to be 60 microns, the obtained terahertz energy is maximum, and the terahertz energy is about 2.3 times of the terahertz energy generated by a single fresnel lens phase diagram when the distance is 0.
It can be seen that, in the present invention, when only the interval between the two fresnel lens phase diagrams A, B is changed (the line between the centers of the two fresnel lens phase diagrams does not rotate along with the symmetry axis L), the polarization state of the terahertz wave is not changed, the terahertz energy is changed along with the interval between the two fresnel lens phase diagrams A, B, and when the interval between the two fresnel lens phase diagrams A, B reaches a certain value, a maximum value of the terahertz energy is obtained.
In addition, at different laser wavelengths, the distance between the two fresnel lens phase diagrams A, B corresponding to the maximum terahertz energy is different, and the distance increases with the increase of the wavelength.
When only the line at the center of the two fresnel lens phase diagrams rotates along with the symmetry axis L (the distance between the two fresnel lens phase diagrams A, B does not change), the energy of the terahertz wave is not changed, the polarization state of the terahertz wave changes along with the directions of the two corresponding plasma lines, and the polarization direction is parallel to the directions of the two plasma lines.
The invention also provides a method for generating high-intensity terahertz waves by using the double plasmas with adjustable spacing in the system shown in fig. 1, which comprises the following steps:
s1: the laser emits laser with the wavelength of 800nm and the polarization direction of the laser in the vertical direction;
s2: outputting signal light with the wavelength of 1300nm or 1550nm after laser passes through an optical parametric amplifier;
s3: after the signal light passes through the chopper and the climbing device, the polarization direction is converted into the horizontal direction;
s4: the signal light is expanded by a laser beam expander and then is incident to a spatial light modulator, two Fresnel lens phase diagrams are arranged in the spatial light modulator, and the two Fresnel lens phase diagrams are respectively provided with a first focus and a second focus so as to convert the incident light into two parallel focused light rays and project the two parallel focused light rays to a reflector and a BBO crystal;
s5: the two light beams emitted by the BBO crystal focus excitation air at the first focus and the second focus respectively to generate plasmas, so that a terahertz radiation source is formed;
s6: terahertz waves emitted by the terahertz radiation source are reflected by the first off-axis parabolic reflector and the second off-axis parabolic reflector and then sequentially pass through the filter plate and the silicon wafer, and then high-intensity terahertz waves are obtained.
The system and the method for generating the high-intensity terahertz waves by the double plasmas with adjustable spacing have the following advantages:
(1) By adjusting the interval between two Fresnel lens phase diagrams loaded on the spatial light modulator and the rotation angle of the symmetry axis, the interval and the spatial distribution between the double plasmas are controlled, and compared with the existing terahertz wave generation method, the intensity of the terahertz wave is improved, the energy and the polarization state of the terahertz wave can be accurately controlled, the blank in the technical field of the existing high-intensity terahertz wave generation is made up, and the method has strong scientific research and practical application values;
(2) The system has the advantages of simple structure, low construction cost, easy maintenance and higher stability;
(3) The generated terahertz wave energy is strong and has a wide spectrum, and is beneficial to spectrum measurement.
Those of ordinary skill in the art will appreciate that: the drawing is a schematic diagram of one embodiment and the modules or flows in the drawing are not necessarily required to practice the invention.
Those of ordinary skill in the art will appreciate that: the modules in the apparatus of the embodiments may be distributed in the apparatus of the embodiments according to the description of the embodiments, or may be located in one or more apparatuses different from the present embodiments with corresponding changes. The modules of the above embodiments may be combined into one module, or may be further split into a plurality of sub-modules.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (8)

1. A system for generating high-intensity terahertz waves by double plasmas with adjustable spacing is characterized by comprising a laser, an optical parametric amplifier, a chopper, a climbing device, a laser beam expander, a spatial light modulator, a reflector, BBO crystals, a first off-axis parabolic reflector, a second off-axis parabolic reflector, a filter and a silicon wafer which are sequentially arranged along an optical path,
the laser emits laser with 800nm wavelength and vertical polarization direction, then outputs signal light with 1300nm or 1550nm wavelength after passing through an optical parametric amplifier, the signal light is converted into horizontal direction by a climbing device after passing through a chopper, then is incident into a spatial light modulator after being expanded by a laser beam expander, two Fresnel lens phase diagrams are arranged in the spatial light modulator, the two Fresnel lens phase diagrams respectively have a first focus and a second focus to convert incident light into two parallel focused light rays and cast the two parallel focused light rays to a reflector and a BBO crystal, the two light beams emitted by the BBO crystal focus excitation air at the first focus and the second focus to generate plasmas, and then a terahertz radiation source is formed, the terahertz waves emitted by the terahertz radiation source are reflected by a first off-axis parabolic reflector and a second off-axis parabolic reflector and then sequentially pass through a filter plate and a silicon wafer, so as to obtain high-strength terahertz waves,
the spacing between the two fresnel lens phase diagrams is equal to the spacing between the two plasmas,
the two Fresnel lens phase diagrams are axisymmetric with respect to a symmetry axis, the connecting line of the two plasma centers is perpendicular to the symmetry axis, and the connecting line of the two plasma centers rotates in the same direction and at the same angle along with the clockwise/anticlockwise rotation of the symmetry axis.
2. The system of claim 1, wherein the first focal point and the second focal point correspond to a first focal length and a second focal length, respectively, the first focal length and the second focal length being proportional to a length of the plasma and inversely proportional to a width.
3. The system for generating high-intensity terahertz waves by dual plasmas with adjustable space as in claim 1, further comprising a terahertz wave intensity detector disposed at the rear end of the silicon wafer.
4. The system for generating high-intensity terahertz waves by using double plasmas with adjustable space as claimed in claim 3, wherein the terahertz wave intensity detector is a pyroelectric detector or a high-intensity detector.
5. The pitch-tunable dual-plasma high-intensity terahertz wave generation system according to claim 1, wherein the climber comprises a two-sided metal mirror.
6. The pitch-adjustable dual-plasma system for generating high-intensity terahertz waves as claimed in claim 1, wherein the frequency of the chopper is 15-20 Hz.
7. The pitch-tunable dual-plasma terahertz wave generating system according to claim 1, wherein the mirror is a metal mirror.
8. A method for generating high-intensity terahertz waves by using the double plasmas with adjustable space in the system according to any one of claims 1 to 7, comprising the following steps:
s1: the laser emits laser with the wavelength of 800nm and the polarization direction of the laser in the vertical direction;
s2: outputting signal light with the wavelength of 1300nm or 1550nm after laser passes through an optical parametric amplifier;
s3: after the signal light passes through the chopper and the climbing device, the polarization direction is converted into the horizontal direction;
s4: the signal light is expanded by a laser beam expander and then is incident to a spatial light modulator, two Fresnel lens phase diagrams are arranged in the spatial light modulator, and the two Fresnel lens phase diagrams are respectively provided with a first focus and a second focus so as to convert the incident light into two parallel focused light rays and project the two parallel focused light rays to a reflector and a BBO crystal;
s5: the two light beams emitted by the BBO crystal focus excitation air at the first focus and the second focus respectively to generate plasmas, so that a terahertz radiation source is formed;
s6: terahertz waves emitted by the terahertz radiation source are reflected by the first off-axis parabolic reflector and the second off-axis parabolic reflector and then sequentially pass through the filter plate and the silicon wafer, and then high-intensity terahertz waves are obtained.
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