CN108321663B - A kind of continuous terahertz emission source of wideband and corresponding exciting method - Google Patents
A kind of continuous terahertz emission source of wideband and corresponding exciting method Download PDFInfo
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- CN108321663B CN108321663B CN201810143058.XA CN201810143058A CN108321663B CN 108321663 B CN108321663 B CN 108321663B CN 201810143058 A CN201810143058 A CN 201810143058A CN 108321663 B CN108321663 B CN 108321663B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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Abstract
The present invention relates to THz wave field, especially a kind of continuous terahertz emission source of wideband comprising: excitation body；Reflector, the reflector are arranged in the excitation body side；Crystal, the side opposite with the reflector of the excitation body is arranged in the crystal, the cooperation of the excitation body, reflector and crystal meets: after starting it excitation body energy supply, finally within the scope of 30u-1000u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal, goal of the invention of the invention is that the terahertz emission source of the continuous 30u-1000u THz wave of wideband can be generated by providing one kind, and discloses the corresponding method for generating the THz wave.
Description
Technical field
The present invention relates to THz wave field, especially a kind of continuous terahertz emission source of wideband.
Background technique
THz wave (THz wave) or be the just quilt from middle and later periods the last century 80's for THz ray (Terahertz ray)
Definite designation, scientists are referred to as far ir ray before this.
THz wave refers to frequency in the electromagnetic wave of 0.1THz to 10THz range, and wavelength is situated between in 0.03mm to 3mm range
Between infrared ray wave band and millimeter wave.
From radiation wavelength, size belongs to transition region of the electronics to photonics, is between electronics and photon
Transition region of the macroscopic classical theories to Bcs Theory.
It is highly developed to the infrared technique and microwave technology of terahertz emission wave band two sides, but Terahertz Technology is also
Very not perfect, Studying carefully its reason is to be handled because wave band is neither entirely appropriate thus with optical theory, is also not exclusively suitble to use microwave
Theory is studied, and the wave-length coverage of 0.03mm to 3mm, and just at present, range is too big, and in THz wave field
In, there is no the wavelength for which range clearly distinguished in this wave-length coverage to have special effect.
In view of the certain diseases of human body and THz wave close association, it has been found that wavelength is completely in 30u-1000u model
(in different moments, such THz wave has the continuous THz wave of wideband in enclosing in different wave length section at different temperatures
The wave state of different characteristics, and these wave states are completely in this larger range of 30u-1000u, are defined with this described " wide
Frequently ", and these waves be it is continuous, " continuous " is defined with this), medically have a great using effect, but regret
It is not find the method stablized and generate this continuous THz wave of wideband.
The mode of traditional generation THz wave has two classes, first is that radiation source is electronically generated, electronics method
When generation radiation source frequency is more than 1T, output power and working efficiency sharply decline, the lost of life, and new structure is also hampered by micro-
The processing technology limit；Second is that optically generate radiation source, though optical means generates radiation source, that spectral range can be obtained is wider
Terahertz emission, but bulky expensive, consumption is greatly, using limited.
There is technological deficiency at present in both modes, also can not be stable simultaneously generate we needed for 30u-1000u
Continuous THz wave within the scope of this (" simultaneously " word here, that is, understand are as follows: the not single wave beam of generation, from
The continuous Duan Bo without fracture of 30u-1000u, has multiple wave crests, trough).
Summary of the invention
In view of the problems of the existing technology, goal of the invention of the invention is to provide one kind can to generate wideband continuous
The terahertz emission source of 30u-1000u THz wave.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of continuous terahertz emission source of wideband comprising:
Excite body；
Reflector, the reflector are arranged in the excitation body side；
The side opposite with the reflector of the excitation body, the excitation body, reflection is arranged in crystal, the crystal
The cooperation of body and crystal meets: after starting it excitation body energy supply, being finally in 30u- from the outer surface output wavelength of crystal
Within the scope of 1000u and waveform is continuously without the THz wave of fracture.
By producing electricl energy its starting excitation body energy supply, thermal energy, luminous energy or THz wave or these four energy
(the excitation body is configured as any combination: being produced electricl energy after being excited, thermal energy, luminous energy or THz wave or these four energy
Any combination of amount, when produce electricl energy simultaneously, thermal energy, luminous energy and when THz wave, effect is best, but only produces electricl energy, heat
Can, luminous energy and THz wave one of those, two or three, be all feasible) and the crystal have an effect and generate terahertz
Hereby wave (excitation of first step Terahertz), the part THz wave that the excitation of first step Terahertz generates are exported towards radiation source outside,
Crystal is towards transport portion THz wave in radiation source simultaneously, and the energy for combining excitation body itself to issue, anti-by reflector
It penetrates final and touches the crystal, have an effect and generate Terahertz excitation (excitation of second step Terahertz), the first and second step is too
Hertz excitation, which combines, (still has THz wave and energy back flowing, meeting is again by reflector in the excitation of second step Terahertz
Reflection, theoretically for the first step and second step Terahertz excitation be a unlimited number of process), finally from the outer surface of crystal
Output wavelength is in the THz wave within the scope of 30u-1000u, it is most important that, the continuous nothing of THz wave waveform of final output
Fracture；
Effect such as Fig. 1 is a kind of wave spectrogram of material under three kinds of different excitation temperatures of excitation body, wherein there are three types of
Wave state, and the main distinction for generating these three wave states is, excites the excitation temperature of body different, actually corresponds to concrete operations,
It is exactly with the excited state (such as low- medium- high level) of different operation gear control excitation bodies, in any case, the wave generated
Be that wave state is different, but the necessarily continuous THz wave within the scope of this in 30u-1000u, i.e., it is a piece of from 30u to 1000u
Wave can be seen that in Fig. 1, rather than single frequency band wave beam.
As a preferred solution of the present invention, the crystal is configured as: and the excitation body and above-mentioned reflector cooperate
After use, within the scope of 30u-1000u and waveform finally is in continuously without the terahertz of fracture from the outer surface output wavelength of crystal
Hereby wave achievees the effect that " within the scope of 30u-1000u and waveform is continuously without the THz wave of fracture " that the excitation body reflects
The coordinated scheme of body and crystal is critically important, while crystal structure is wherein also playing very crucial effect.
As a preferred solution of the present invention, the crystal includes electron crystal and the photon crystalline substance with electron crystal combination
Body.
Electron crystal, i.e. electronics serve as the ionic crystals of anion, and photonic crystal refers to the people with photon band gap characteristic
Periodic dielectric structures are made, by the mixed crystal being obtained, passing through above-mentioned excitation electron crystal and photonic crystal combination
The coordinated scheme of body, reflector and crystal cooperates, and then carries out excitation process, can obtain 30u-1000u needed for us this
Continuous THz wave in a range (under different moments, different temperature condition, which has a different wave states, and this
A little wave states be in this larger range of 30u-1000u, are defined " wideband " with this, and these waves be continuously, with
Described in this definition " continuous ", as can be seen from Figure 1 the continuity of waveform, Fig. 1 are a kind of materials, in three kinds of differences of excitation body
Wave spectrogram under state, wherein there are three types of wave states, and the main distinction for generating these three wave states is, excites the excitation temperature of body
Difference actually corresponds to concrete operations, is exactly the excited state with different operation gear control excitation bodies).
As a preferred solution of the present invention, the electron crystal and photonic crystal are combined by way of doping.
As a preferred solution of the present invention, the crystal is configured as: and the excitation body and above-mentioned reflector cooperate
After use, within the scope of 30u-100u and waveform finally is in continuously without the Terahertz of fracture from the outer surface output wavelength of crystal
Wave.
As a preferred solution of the present invention, the crystal is configured as: and the excitation body and above-mentioned reflector cooperate
After use, within the scope of 100u-200u and waveform finally is in continuously without the terahertz of fracture from the outer surface output wavelength of crystal
Hereby wave.
As a preferred solution of the present invention, the crystal is configured as: and the excitation body and above-mentioned reflector cooperate
After use, within the scope of 200u-300u and waveform finally is in continuously without the terahertz of fracture from the outer surface output wavelength of crystal
Hereby wave.
As a preferred solution of the present invention, the excitation body includes carbon fiber and the graphene with carbon fibers, is somebody's turn to do
Scheme can reach it is above-mentioned " produce electricl energy its starting excitation body energy supply, thermal energy, luminous energy or THz wave or this four
The technical effect of any combination of kind energy ".
As a preferred solution of the present invention, the reflector is metal film, in above-mentioned excitation body, reflector and crystal
In coordinated scheme, preferable reflecting effect can be played.
Disclosed herein as well is a kind of continuous THz wave exciting methods of wideband comprising step:
In excitation body two sides setting crystal and reflector, meet the cooperation of the excitation body, reflector and crystal: to sharp
After hair body energy supply starts it, finally it is within the scope of 30u-1000u from the outer surface output wavelength of crystal and waveform is continuous
THz wave without fracture；
Its starting is made to excitation body energy supply.
By producing electricl energy its starting excitation body energy supply, thermal energy, luminous energy or THz wave or these four energy
(the excitation body is configured as any combination: being produced electricl energy after being excited, thermal energy, luminous energy or THz wave or these four energy
Any combination of amount, when produce electricl energy simultaneously, thermal energy, luminous energy and when THz wave, effect is best, but only produces electricl energy, heat
Can, luminous energy and THz wave one of those, two or three, be all feasible) and the crystal have an effect and generate terahertz
Hereby wave (excitation of first step Terahertz), the part THz wave that the excitation of first step Terahertz generates are exported towards radiation source outside,
Crystal is towards transport portion THz wave in radiation source simultaneously, and the energy for combining excitation body itself to issue, anti-by reflector
It penetrates final and touches the crystal, have an effect and generate Terahertz excitation (excitation of second step Terahertz), the first and second step is too
Hertz excitation, which combines, (still has THz wave and energy back flowing, meeting is again by reflector in the excitation of second step Terahertz
Reflection, theoretically for the first step and second step Terahertz excitation be a unlimited number of process), finally from the outer surface of crystal
Output wavelength is in the THz wave within the scope of 30u-1000u, it is most important that, the continuous nothing of THz wave waveform of final output
Fracture.
The beneficial effects of the present invention are:
By producing electricl energy its starting excitation body energy supply, thermal energy, luminous energy or THz wave or these four energy
(the excitation body is configured as any combination: being produced electricl energy after being excited, thermal energy, luminous energy or THz wave or these four energy
Any combination of amount, when produce electricl energy simultaneously, thermal energy, luminous energy and when THz wave, effect is best, but only produces electricl energy, heat
Can, luminous energy and THz wave one of those, two or three, be all feasible) and the crystal have an effect and generate terahertz
Hereby wave (excitation of first step Terahertz), the part THz wave that the excitation of first step Terahertz generates are exported towards radiation source outside,
Crystal is towards transport portion THz wave in radiation source simultaneously, and the energy for combining excitation body itself to issue, anti-by reflector
It penetrates final and touches the crystal (reflector has reflex, can reflect luminous energy, electric energy, thermal energy or THz wave etc.),
It has an effect and generates Terahertz excitation (excitation of second step Terahertz), the Terahertz excitation of the first and second step combines (second step terahertz
Hereby excitation in still have THz wave and energy back flowing, can be reflected again by reflector, theoretically for the first step and
The excitation of second step Terahertz is a unlimited number of process), finally 30u-1000u model is in from the outer surface output wavelength of crystal
Enclose interior THz wave, it is most important that, the THz wave waveform of final output is continuously without fracture.
Detailed description of the invention
Fig. 1 is the THz wave wave spectrogram of a kind of crystal under different excitation temperatures in the embodiment of the present invention 1；
Fig. 2 is a schematic structural view of Embodiment 1 of the present invention；
Fig. 3 is the structural blast schematic diagram of the embodiment of the present invention 1；
Fig. 4 is the structural schematic diagram of the excitation body of the embodiment of the present invention 1；
Fig. 5 is the structural schematic diagram of the reflector of the embodiment of the present invention 1；
Fig. 6 is the structural schematic diagram of the excitation body of the embodiment of the present invention 2.
Fig. 7 is a schematic structural view of Embodiment 2 of the present invention；
Marked in the figure: 1- crystal, 2- excitation body, 3- reflector, 4- conducting copper belt, 5- insulating substrate, 6- excitation band, 7- are convex
It rises, 8- heat insulation layer.
Specific embodiment
Below with reference to embodiment and specific embodiment, the present invention is described in further detail.But this should not be understood
For the scope of the above subject matter of the present invention is limited to the following embodiments, all technologies realized based on summary of the invention of the invention are equal
Belong to the scope of the present invention.
Embodiment 1
Such as Fig. 2-5, present embodiment discloses a kind of continuous terahertz emission sources of wideband comprising:
Excite body 2；
Reflector 3, the reflector 3 are arranged in 2 side of excitation body, the present embodiment, and the reflector 3 is metal
Film (reflector 3 has reflex, is not limited only to reflection luminous energy, can also reflect electric energy, thermal energy or THz wave etc.), and it is anti-
It penetrates face (towards excitation body 2) and is configured as that multiple raised 7 (the vertical view profile of single protrusion 7 is rectangle, and such as Fig. 5, Fig. 5 are to overlook
Figure), described raised 7 are arranged in the form of rectangular array；
Side (the position combine after opposite with the reflector 3 of the excitation body 2 is arranged in crystal 1, the crystal
Relationship such as Fig. 1, for the form of superposition, Fig. 2 is the explosive view of side view, is for expression excitation body 2, reflector 3 and crystal
Plate structure), the cooperation of the excitation body 2, reflector 3 and crystal 1 meets: after starting it excitation energy supply of body 2, finally from
The outer surface output wavelength of crystal is within the scope of 30u-1000u the and waveform continuously (crystal 1 of the THz wave without fracture
It is also arranged as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, finally from the outer surface output wavelength of crystal
Within the scope of 30u-1000u and waveform is continuously without the THz wave of fracture), in the present embodiment, specifically, the crystal 1
Photonic crystal including electron crystal and with electron crystal combination, and the side that the electron crystal and photonic crystal pass through doping
Formula is combined.
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 30u-50u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
About the structure of the excitation body 2, specifically, such as Fig. 4, the excitation body 2 includes:
Insulating substrate 5；
Conducting copper belt 4, the conducting copper belt 4 are arranged in the both sides (Fig. 4 is top view) at 5 top of insulating substrate；
Excitation band 6, the excitation band 6 include carbon fiber and (correspond to " institute above-mentioned with the graphene of carbon fibers
Stating excitation body includes carbon fiber and the graphene with carbon fibers ", excitation band 6 belongs to a part in excitation body 2), swash
6 both ends of hair band be separately connected 5 two sides of insulating substrate conducting copper belt 4 (multiple excitation bands 6 be arranged side by side and be spaced from each other, it is described
After crystal and excitation body 2 cooperate, the surface of crystal and the fitting of 6 surface of excitation band), the lower section of insulating substrate 5 or side setting
Have a power interface, power interface can external power supply, be actuated for energizing for excitation body 2.
The present embodiment also discloses a kind of continuous THz wave exciting method of wideband comprising step:
A, in excitation 2 two sides of body setting crystal and reflector 3, keep the cooperation of the excitation body 2, reflector 3 and crystal full
Foot: to excitation body 2 energy supply make its start after, finally from the outer surface output wavelength of crystal be in it is within the scope of 30u-1000u and
Waveform continuously the THz wave without fracture (crystal 1 include electron crystal and with electron crystal combination photonic crystal, and
The electron crystal and photonic crystal are combined by way of doping, and the excitation body includes carbon fiber and and carbon fiber
Tie up combined graphene), terahertz emission source structure above-mentioned in structure, that is, the present embodiment that this method designs, to Terahertz spoke
The restriction for penetrating source structure is suitable for this method；
B, excitation body 2 is energized by power supply, makes its starting, excites crystal 1.
Embodiment 2
Such as Fig. 6,7, the difference of the present embodiment and embodiment 1 is, the conducting copper belt 4 is arranged in 5 top of insulating substrate
Surrounding, " well " word structures arrangement is presented in multiple excitation bands 6, and both ends are both connected in conducting copper belt 4, secondly, the present embodiment
In, the excitation band 6 is that other do not include or do not fill including carbon fiber and with the heating of the graphene of carbon fibers all
It sets, such as resistance wire, laser, plasma or photoelectricity irradiation unit, " is produced electricl energy after being excited, thermal energy, luminous energy as long as meeting
Or any combination of THz wave or these four energy " condition；Moreover, the reflector is Nonmetallic reflective body, than
Belong to Nonmetallic reflective body if mirror.
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 50u-100u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Meanwhile in the present embodiment, further includes heat insulation layer 8, side opposite with crystal 1 on reflector 3 is set, is passed through
Principle of reflection prevents partial heat energy to the loss outside radiation source, before also talk about, reflector 3 also can reflective portion thermal energy,
And the thermal energy of thermal energy and reflector 3 effect of this part, they are all a kind of waves, the wave of the thermal energy only acted on heat insulation layer 8
Section is different, after heat insulation layer 8 is added, prevents the effect of heat energy loss more preferable, the heat energy wave band of adaptation is wider, the utilization to energy
Rate is higher.
Embodiment 3
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 100u-150u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 4
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 150u-200u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 5
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 200u-250u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 6
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 250u-300u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 6
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 300u-1000u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 7
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 300u-650u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Embodiment 8
In the present embodiment, the crystal is configured as: and after the excitation body 2 and above-mentioned reflector 3 are used cooperatively, most
Within the scope of 650u-1000u and waveform is in continuously without the THz wave of fracture from the outer surface output wavelength of crystal eventually.
Claims (8)
1. a kind of continuous terahertz emission source of wideband characterized by comprising
Excite body；
Reflector, the reflector are arranged in the excitation body side；
Crystal, the crystal be arranged in it is described excitation body the side opposite with the reflector, the excitation body, reflector and
The cooperation of crystal meets: after starting it excitation body energy supply, being finally in 30u-1000u from the outer surface output wavelength of crystal
In range and waveform is continuously without the THz wave of fracture, wherein the crystal includes the light of electron crystal and electron crystal combination
Sub- crystal, and the electron crystal and photonic crystal are combined by way of doping.
2. the continuous terahertz emission source of wideband according to claim 1, which is characterized in that the crystal is configured as: and
After the excitation body and above-mentioned reflector are used cooperatively, 30u-1000u model finally is in from the outer surface output wavelength of crystal
In enclosing and waveform is continuously without the THz wave of fracture.
3. the continuous terahertz emission source of wideband according to claim 2, which is characterized in that the crystal is configured as: and
After the excitation body and above-mentioned reflector are used cooperatively, 30u-100u range finally is in from the outer surface output wavelength of crystal
Interior and waveform is continuously without the THz wave of fracture.
4. the continuous terahertz emission source of wideband according to claim 2, which is characterized in that the crystal is configured as: and
After the excitation body and above-mentioned reflector are used cooperatively, 100u-200u model finally is in from the outer surface output wavelength of crystal
In enclosing and waveform is continuously without the THz wave of fracture.
5. the continuous terahertz emission source of wideband according to claim 2, which is characterized in that the crystal is configured as: and
After the excitation body and above-mentioned reflector are used cooperatively, 200u-300u model finally is in from the outer surface output wavelength of crystal
In enclosing and waveform is continuously without the THz wave of fracture.
6. the continuous terahertz emission source of wideband according to claim 1, which is characterized in that the excitation body includes carbon fiber
And the graphene with carbon fibers.
7. the continuous terahertz emission source of wideband according to claim 1, which is characterized in that the reflector is metal film.
8. a kind of continuous THz wave exciting method of wideband, which is characterized in that comprising steps of
In excitation body two sides setting crystal and reflector, meet the cooperation of the excitation body, reflector and crystal: to excitation body
After energy supply starts it, within the scope of 30u-1000u and waveform finally is in continuously without disconnected from the outer surface output wavelength of crystal
The THz wave split；
Wherein the crystal includes the photonic crystal of electron crystal and electron crystal combination, and the electron crystal and photon are brilliant
Body is combined by way of doping；
Its starting is made to excitation body energy supply.
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| CN109011182A (en) * | 2018-08-29 | 2018-12-18 | 成都清大华科微晶材料有限责任公司 | A kind of wideband is infrared and terahertz emission device |
| CN109663217A (en) * | 2018-12-29 | 2019-04-23 | 浙江万旭太赫兹技术有限公司 | A kind of intelligence Terahertz moxibustion head and preparation method thereof |
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| JP2004219967A (en) * | 2003-01-13 | 2004-08-05 | Tetsuo Yanai | Terahertz wave generator and measuring apparatus thereof |
| US20090074016A1 (en) * | 2006-10-18 | 2009-03-19 | Orval Mamer | Apparatus for Terahertz wave generation from water vapor |
| JP2009272396A (en) * | 2008-05-02 | 2009-11-19 | Japan Atomic Energy Agency | Solid-state laser apparatus |
| TWI417628B (en) * | 2009-02-25 | 2013-12-01 | Univ Nat Chiao Tung | Coherent multiple-stage optical rectification terahertz wave generator and the operation method |
| CN103872572B (en) * | 2014-03-13 | 2019-03-08 | 中国科学院福建物质结构研究所 | A self-Q-switched, orthogonally polarized dual-wavelength pulsed laser |
| CN104009371B (en) * | 2014-05-19 | 2017-03-08 | 汕头大学 | A kind of generator of high power terahertz emission of regulable center frequency and method |
| CN104677497B (en) * | 2015-02-13 | 2017-01-11 | 上海理工大学 | Detection device and method for properties of terahertz waves |
| CN204517126U (en) * | 2015-03-25 | 2015-07-29 | 天津大学 | Photonic crystal fiber THz laser |
| CN204866599U (en) * | 2015-08-24 | 2015-12-16 | 南京爱丁堡环保科技有限公司 | Photic many spectral imaging's of initiative excitation formula sorting facilities |
| CN106099624B (en) * | 2016-08-11 | 2018-08-10 | 首都师范大学 | The system and method that laser excitation air plasma generates high intensity THz wave |
| CN106451035B (en) * | 2016-10-10 | 2018-10-30 | 华北水利水电大学 | A kind of terahertz radiation source of stokes light enhancing |
| CN206348267U (en) * | 2016-11-25 | 2017-07-21 | 首都师范大学 | The system that laser excitation air plasma produces high intensity THz wave |
| CN106841113A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method and apparatus of Terahertz frequency range synchro measure material wave transparent reflection characteristic |
| CN106707412B (en) * | 2017-03-07 | 2019-06-14 | 青岛大学 | A two-dimensional silicon-based terahertz frequency domain photonic crystal waveguide coupler |
| CN107015309B (en) * | 2017-06-12 | 2019-09-10 | 重庆邮电大学 | A kind of low-loss broadband THz wave gradual change photon crystal filter |
| CN107611755B (en) * | 2017-10-13 | 2024-02-23 | 首都师范大学 | System and method for generating high-intensity terahertz waves by double plasmas with adjustable spacing |
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