CN110416422A - Organic electroluminescence device and display including it - Google Patents

Abstract

The present invention relates to organic electroluminescence devices, include successively from the bottom to top substrate, first electrode, organic functional material layer and second electrode, organic functional material layer includes: hole transporting zone, is located on first electrode；Luminescent layer is located on hole transporting zone comprising subject and object material；Electron transporting zone is located on luminescent layer；Wherein hole transporting zone successively includes hole injection layer, hole transmission layer and electronic barrier layer from the bottom to top, hole transmission layer includes the first and second organic materials, wherein the HOMO energy level of the first organic material is -5.2eV to -5.6eV, the HOMO energy level of second organic material is -5.4eV extremely -5.9eV, and ︱ HOMO_{First organic material}︱ < ︱ HOMO_{Second organic material}︱.

Description

Organic electroluminescence device and display including it

The present invention relates to technical field of semiconductors, more specifically, are related to a kind of organic electroluminescence device and including it Display.

Organic electroluminescence device technology both can be used for manufacturing new display product, can be used for preparing novel illumination Product is expected to substitute existing liquid crystal display and fluorescent lighting, and application prospect is very extensive.Organic electroluminescence device conduct Current device, when to its two end electrodes apply voltage, and pass through positive negative electricity of the electric field action in organic layer functional material film layer On lotus, positive and negative charge is further compound in organic luminous layer, i.e. generation organic electroluminescent.

Organic electroluminescence device is generally multilayered structure, and the various auxiliary functional layers other than luminescent layer are to device It can equally play a crucial role.Reasonable device architecture can effectively improve the performance of device, electron injecting layer, electronics Transport layer, hole blocking layer, luminescent layer, electronic barrier layer, hole transmission layer and hole injection layer are widely used for improving device Performance.

High performance research is proposed to organic electroluminescence device at present to include: the driving voltage for reducing device, improve device Luminous efficiency, improve the service life etc. of device.In order to realize organic electroluminescence device performance continuous promotion, not only Organic electroluminescence device structure and the innovation of preparation process are needed, with greater need for the continuous research of organic electroluminescent functional material And innovation, produce the organic electroluminescent functional material of higher performance.

Carrier (hole and electronics) in organic electroluminescence device is under the driving of electric field respectively by two of device Electrode injection meets recombination luminescence into device, and in luminescent layer.Sky used in known existing organic electroluminescence device Hole transport materials, such asThere are HOMO energy level and electronic blocking layer material HOMO energy level difference are larger, Yi It is formed at material interface and gathers charge, influence the OLED device service life.

In addition, the energy level of not all material can be well matched in organic electroluminescence device, between them Potential barrier seriously hinder being efficiently injected into for hole.Reasonable level structure is conducive to the energy level in device layers and forms ladder gesture It builds, can reduce the potential barrier of hole injection, reduce the driving voltage of device, luminous efficiency and service life so as to improve device.

Therefore, it is constantly needed to the organic electroluminescence device that exploitation has excellent luminous efficiency and service life.

The present invention is intended to provide a kind of organic electroluminescence with improved luminous efficiency, heat resistance and service life Part and display including it.

One object of the present invention realized and providing a kind of following organic electroluminescence devices, the organic electroluminescence Luminescent device is disposed with substrate, first electrode, organic functional material layer and second electrode, the organic functions from the bottom to top Material layer includes:

Hole transporting zone is located on the first electrode；

Luminescent layer is located on the hole transporting zone comprising material of main part and guest materials；

Electron transporting zone is located on the luminescent layer,

Wherein, the hole transporting zone successively includes hole injection layer, hole transmission layer and electronic blocking from the bottom to top Layer,

The hole transmission layer include the first and second organic materials, wherein the HOMO energy level of the first organic material be- 5.2eV to -5.6eV, preferably -5.3eV extremely -5.5eV, more preferably -5.35eV to -5.5eV, and the second organic material HOMO energy level is -5.4eV to -5.9eV, preferably -5.4eV to -5.7eV, more preferably -5.48eV extremely -5.68eV, and ︱ HOMO_{First organic material}︱ < ︱ HOMO_{Second organic material}︱.

In the organic electroluminescence device for including the hole transmission layer containing the first and second organic materials of the invention, limit The HOMO of first and second organic material is determined, this level-density parameter subtracts the potential barrier between anode and electronic blocking bed boundary Small, this is conducive to hole and is injected into electronic barrier layer from anode, improves the injection efficiency in hole, and reduces the drive of device Dynamic voltage, reduces the Accumulating charge of interface contacts, improves the stability and service life of device；In addition, hole of the present invention passes The higher glass transition temperature of defeated layer, improves the heat resistance of device.And it is combined by two kinds of different materials organic Film layer can be effectively improved molecules align and intermolecular interaction, so that membranous layer stability is higher, reduce the electric leakage of device Stream, improves the service life of device.

Another object of the present invention is realized and providing a kind of display including above-mentioned organic electroluminescence device.

Fig. 1 schematically shows the cross-sectional view of the organic electroluminescence device of one embodiment of the invention.

Fig. 2 schematically shows the energy transfer mechanisms of the organic electroluminescence device of one embodiment of the invention Figure.

Fig. 3-7 schematically shows luminescent layer combination in the organic electroluminescence device comprising hole transmission layer of the present invention Structure chart.

Hereinafter with reference to attached drawing, the present invention will be described in more detail, but is not intended to limit the present invention.

Listed any numberical range means to include being included in listed range to have the complete of identical numerical precision herein Portion's subrange.For example, " 1.0 to 10.0 " mean to include all sons between listed minimum value 1.0 and listed maximum value 10.0 Range (and including 1.0 and 10.0), that is to say, that with the minimum value equal to or more than 1.0 and most equal to or less than 10.0 The whole subranges being worth greatly.Any greatest measure limitation listed herein means to include the smaller numerical value of whole for being included in this paper Limitation, and any minimum value limitation listed herein means to include all bigger numerical value limitation for being included in this paper.Cause This, applicant retain modification include claims this specification right, be expressly recited fall into it is explicitly described herein Any subrange in range.

It is to be understood that abbreviation " HT " used in herein means to constitute the organic material of hole transmission layer, such as HT-I means that the first organic material, HT-II mean the second organic material.

In the accompanying drawings, for the sake of clarity, the size of layer and region can be exaggerated.It will also be understood that when layer or element are known as Another layer perhaps substrate " on " when the layer or element can be directly on another layer perhaps and on substrate or can also deposit In middle layer.In addition, it will also be understood that when layer be known as two layers " between " when, this layer can be unique between the two layers Layer, or one or more middle layer also may be present.Identical appended drawing reference indicates identical element in full text.

Hereinafter, by description according to the organic electroluminescence device of embodiment.

Fig. 1 schematically shows the cross-sectional view of the organic electroluminescence device of one embodiment of the invention.Reference Fig. 1, the organic electroluminescence device of one embodiment of the invention be disposed with from the bottom to top substrate 1, first electrode 2, Hole transporting zone A, luminescent layer 6, electron transporting zone B and second electrode 10, wherein hole transporting zone A is from the bottom to top successively Including hole injection layer 3, hole transmission layer 4 and electronic barrier layer 5, and electron transporting zone B successively includes sky from the bottom to top Cave barrier layer 7, electron transfer layer 8 and electron injecting layer 9.

As the substrate of organic electroluminescence device of the present invention, any commonly employed base in organic electroluminescence device can be selected Plate.Example is transparent substrate, such as glass or transparent plastic substrate；Opaque substrate, such as silicon substrate；Flexible PI ilm substrate.It is different Substrate has different mechanical strengths, thermal stability, the transparency, surface flatness, waterproofness, according to property difference, user To difference.In the present invention, it is preferred to use transparent substrate.The thickness of substrate is not particularly limited.

First electrode is formed on substrate, first electrode can be relative to each other with second electrode.First electrode can be anode. First electrode can be transmission electrode, half transmitting electrode or reflecting electrode.When first electrode is transmission electrode, first electrode Transparent metal oxide can be used to be formed, for example, indium tin oxide (ITO), indium-zinc oxide (IZO), zinc oxide (ZnO) or Indium tin zinc oxide (ITZO) etc..When first electrode is half transmitting electrode or reflecting electrode, first electrode may include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or metal mixture.The thickness of first electrode layer depends on used material, usually 50-500nm, preferably 70-300nm and more preferably 100-200nm.

The organic functional material layer being set between first electrode and second electrode successively includes hole transport from the bottom to top Region, luminescent layer and electron transporting zone.

Hole transporting zone may be provided between first electrode and luminescent layer.Hole transporting zone may include hole injection Layer, hole transmission layer and electronic barrier layer, but not limited to this.For example, referring to Fig. 1, hole transporting zone may include from the bottom to top Hole injection layer, hole transmission layer and the electronic barrier layer being successively set on first electrode.

In general, the organic material --- its be easily oxidized and electrochemically stable when it is oxidized --- with p-type property It is mainly used as hole-injecting material or hole mobile material.Meanwhile with N-shaped property organic material --- its be easily reduced and It is electrochemically stable when being reduced --- it is used as electron injection material or electron transport material.As emitting layer material, preferably both There is the material of N-shaped property again with p-type property, it is stable when it is oxidized and reduced, further preferably have when forming exciton Have higher for converting exciton to the material of the luminous efficiency of light.

The material of hole injection layer is usually preferably with the material of high work function, so that hole is easily injected into organic material In the bed of material.In the present invention, the material of hole injection layer at least contains one in material shown in general formula (17), (18) or (19) Kind:

Wherein, in general formula (17), F₁-F₃It is independently represented each other substituted or unsubstituted C_6-30Aryl, substitution do not take 3 to 30 unit's heteroaryls in generation, and F₁-F₃It can be identical or different；

In general formula (18) and general formula (19), G₁-G₆Be independently represented each other hydrogen, itrile group, halogen, amide groups, alkoxy, Ester group, nitro, C-R₁₁, substituted or unsubstituted C_6-30Aryl, 3 to 30 unit's heteroaryls, wherein R₁₁For the C of linear chain or branched chain_1-20 Alkyl, condition are G₁-G₆It is not simultaneously hydrogen；

Wherein in the case where heteroaryl, the hetero atom is selected from least one of N, O and S atom.

In a preferred embodiment of the invention, the material of used hole injection layer is selected from following (a) to (j) One of:

The thickness of hole injection layer of the invention can be 5-100nm, preferably 5-50nm and more preferably 5-20nm.

Hole injection layer can also be comprising for improving conductive charge generating material.The charge generating material can be with For p-doping object.The example of the non-limiting compound of P- dopant is, for example, quinone derivative, such as four cyano quinone bismethane (TCNQ) and the fluoro- four cyano -1,4- benzoquinones bismethane (F4-TCNQ) of 2,3,5,6- tetra-；Six azepine Sanya benzene derivatives, such as 2, Six cyano -1,4,5,8,9,12- of 3,6,7,10,11-, six azepine triphenylene (HAT-CN)；Cyclopropane derivative, such as 4,4 ', 4 "-((1E, 1 ' E, 1 " E)-cyclopropane -1,2,3- trimethylene three (cyano formyl subunit)) three (2,3,5,6- ptfe benzyls)； Metal oxide, such as tungsten oxide and molybdenum oxide.

Hole transmission layer of the invention may be provided on hole injection layer.The hole transport layer material has including first Machine material and the second organic material, wherein the ratio of the first organic material and the second organic material is 1:99 to 99:1, preferably 10:90 to 90:10, more preferably 30:70 are to 70:30, based on quality.In addition, the HOMO energy level of first organic material For -5.2eV to -5.6eV, preferably -5.3eV to -5.5eV, more preferably -5.35eV extremely -5.5eV, and the second organic material HOMO energy level be -5.4eV to -5.9eV, preferably -5.4eV to -5.7eV, more preferably -5.48eV to -5.68eV, and And ︱ HOMO_{First organic material}︱ < ︱ HOMO_{Second organic material}︱.

Fig. 2 schematically shows the energy transfer machines of the organic electroluminescence device of one embodiment of the invention System, wherein a represents hole injection layer, and b represents hole transmission layer, and c represents electronic barrier layer, and d represents the object of luminescent layer, e generation The main body and f of table luminescent layer represent electron transfer layer.

In one embodiment, between second organic material and the HOMO energy level of electron-blocking materials difference it is exhausted It is≤0.4ev to value.Lesser energy barrier hold that hole can between the hole mobile material and electronic blocking layer material It changes places and is injected into electronic barrier layer via hole transmission layer, and then be transmitted in luminescent layer.

In a preferred embodiment of the present invention, the first and second organic materials of the invention are each independently selected from One of general formula (1), general formula (2) and general formula (3):

Wherein, in general formula (1)

X、X₁It is each independently selected from singly-bound, carbon atom, N- (R₅), sulphur atom, oxygen atom, ethenylidene, linear chain or branched chain C_1-20The C of alkyl-substituted alkylidene, linear chain or branched chain_1-20Alkyl-substituted silicylene, C_6-20The alkylidene that aryl replaces One of；

If there is R₅, then its may be the same or different selected from hydrogen atom, protium atom, D-atom, tritium atom, fluorine atom, The C of phosphoric acid or its salt, linear chain or branched chain_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl-substituted silicylene, Aryl with 5 to 30 carbon atoms, with 5 to 30 carbon atoms and at least one be selected from heteroatomic heteroaryl of N, O and S Base, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl Base replaces；

Z represents nitrogen-atoms or C-R₆, wherein R₆May be the same or different selected from hydrogen atom, protium atom, D-atom, tritium atom, Fluorine atom, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl replaces Silicylene, the aryl with 5 to 30 carbon atoms, with 5 to 30 carbon atoms and at least one be selected from N, O and S it is miscellaneous The heteroaryl of atom, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20Alkyl, C_6-20Virtue Base, C_5-20Heteroaryl replaces, two of them or more R₆Group can be connected to each other and can form ring structure；

Ar₁、Ar₂、Ar₃、Ar₄It is independently represented each other the C of singly-bound, linear chain or branched chain_1-20Alkylidene has 5 to 30 carbon The C of the arlydene of atom, linear chain or branched chain_1-20Alkyl-substituted silicylene has 5 to 30 carbon atoms and at least one choosing From the heteroatomic inferior heteroaryl of N, O and S, wherein the group can be optionally by linear chain or branched chain in the case where rear the two C_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces, and wherein Ar1, Ar2 group can also connect cyclization；

M, n, p, q, s and t are equal to 0 or 1；And m+n+p+q >=1 and m+n+s+t >=1；

R₁、R₂、R₃And R₄It is independently represented each other hydrogen atom, general formula (4), structure shown in general formula (5) or general formula (6), item Part is R₁、R₂、R₃And R₄It is not simultaneously hydrogen atom；

Wherein, in general formula (4) and general formula (5):

X₂、X₃Be independently represented each other singly-bound, oxygen atom, sulphur atom, ethenylidene, linear chain or branched chain C_1-20Alkyl takes The C of the alkylidene in generation, linear chain or branched chain_1-20Alkyl-substituted silylation, C_6-20Alkylidene, the C of aryl substitution_1-20Alkyl replaces Imido grpup, C_6-20Imido grpup, the C of aryl substitution_5-20One of the imido grpup that heteroaryl replaces；

Y₁Represent N atom or C-R with may be the same or different, wherein R represent with may be the same or different hydrogen atom, protium atom, D-atom, tritium atom, fluorine atom, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20Alkyl-substituted alkyl, straight chain or branch The C of chain_1-20Alkyl-substituted silylation, has 5 to 30 carbon atoms and at least one at the aryl with 5 to 30 carbon atoms Heteroatomic heteroaryl selected from N, O and S, wherein the group can be optionally by linear chain or branched chain in the case where rear the two C_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Two of them or more R group can be connected to each other and can form ring knot Structure；

R₆、R₇It is independently represented each other hydrogen atom, protium atom, D-atom, tritium atom, fluorine atom, phosphoric acid or its salt, straight chain Or the C of branch_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl-substituted silylation has 5 to 30 carbon atoms Aryl, with 5 to 30 carbon atoms and at least one be selected from N, O and S heteroatomic heteroaryl, general formula (7) or general formula (6) Shown structure；Wherein in the case where aryl and heteroaryl, the group can be optionally by the C of linear chain or branched chain_1-20Alkyl, C_6-20 Aryl, C_5-20Heteroaryl replaces；

Wherein, in general formula (7):

Y₂Represent N atom or C-R with may be the same or different₁₀, wherein R₁₀Represent hydrogen atom, protium with may be the same or different former Son, D-atom, tritium atom, fluorine atom, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20Alkyl-substituted alkyl, straight chain or branch The C of chain_1-20Alkyl-substituted silylation, has 5 to 30 carbon atoms and at least one at the aryl with 5 to 30 carbon atoms Heteroatomic heteroaryl selected from N, O and S, wherein the group can be optionally by linear chain or branched chain in the case where rear the two C_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；

X₄、X₅Be independently represented each other singly-bound, oxygen atom, sulphur atom, ethenylidene, linear chain or branched chain C_1-20Alkyl takes The C of the alkylidene in generation, linear chain or branched chain_1-20Alkyl-substituted silylation, C_6-20Alkylidene, the C of aryl substitution_1-20Alkyl replaces Imido grpup, C_6-20Imido grpup, the C of aryl substitution_5-20One of the imido grpup that heteroaryl replaces；

General formula (7) is connected by simultaneously ring mode with general formula (4) or general formula (5), and * is expressed as connection site, can only when being connected Take two adjacent sites, general formula (7) and general formula (4) or general formula (5) and when ring connects, connection site Y₁It is expressed as carbon atom；

In general formula (6):

R₈、R₉It is independently represented each other the aryl with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms and at least one Heteroatomic heteroaryl selected from N, O and S, the group can be optionally by the C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20 Heteroaryl replaces；R₈、R₉Cyclization can also be connected；

In general formula (2):

L₁、L₂、L₃It is independently represented each other singly-bound, the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms The heteroatomic inferior heteroaryl of N, O and S are selected from at least one, wherein in the case where rear the two, the group can optional quilt The C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；L₁、L₂、L₃It can be connected to each other two-by-two and ring can be formed Structure；

Ar₅、Ar₆、Ar₇Be independently represented each other arlydene with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and At least one is selected from the imido grpup of the heteroatomic inferior heteroaryl of N, O and S, 5 to 30 carbon atoms, and the group can be optionally straight The C of chain or branch_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Ar₅、Ar₆、Ar₇It can be connected to each other and can be formed two-by-two Ring structure；

Ar₅、Ar₆、Ar₇It respectively can also be independently expressed as general formula (4), general formula (5), one in general formula (6), wherein Group X on the general formula₂、X₃、Y₁、R₆、R₇There is meaning as described above with *；

In general formula (3):

D₁、D₂、D₃It is independently represented each other singly-bound, the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms The heteroatomic inferior heteroaryl of N, O and S are selected from at least one, wherein in the case where rear the two, the group can optional quilt The C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；L₁、L₂、L₃It can be connected to each other two-by-two and ring can be formed Structure；

Ar₈、Ar₉、Ar₁₀It is independently represented each other the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms It is selected from the imido grpup of the heteroatomic inferior heteroaryl of N, O and S, 5 to 30 carbon atoms at least one, the group can optional quilt The C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Ar₈、Ar₉、Ar₁₀It can be connected to each other two-by-two and can shape At ring structure；

Ar₈、Ar₉、Ar₁₀In at least one be general formula (4), general formula (5), one in general formula (6)；Wherein on the general formula Group X₂、X₃、Y₁、R₆、R₇Respectively there is meaning as described above with *.

In a preferred embodiment of the present invention, general formula (2) is expressed as general formula (9) one of to general formula (12):

Wherein

Ar₅To Ar₇Indicate arlydene with 5 to 30 carbon atoms, with 5 to 30 carbon atoms and at least one be selected from N, the imido grpup of the heteroatomic inferior heteroaryl of O and S, 5 to 30 carbon atoms, the group can be optionally by linear chain or branched chain C_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；

And L₁-L₃、R₆-R₉、Y₁And X₂-X₃All have meaning described above.

In a preferred embodiment of the present invention, general formula (3) is expressed as general formula (13) one of to general formula (16):

Wherein

Ar₈And Ar₁₀Indicate arlydene with 5 to 30 carbon atoms, with 5 to 30 carbon atoms and at least one be selected from N, the imido grpup of the heteroatomic inferior heteroaryl of O and S, 5 to 30 carbon atoms, the group can be optionally by linear chain or branched chain C_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；And

And D₁-D₃、R₆-R₉、Y₁And X₂-X₃All have meaning described above.

In a preferred embodiment of the present invention, in general formula (1)Part is selected from one of the following:

And wherein Z, Ar₁、Ar₂And R₅With meaning described above.

In a preferred embodiment of the present invention, first organic material is selected from one of following compounds:

In a preferred embodiment of the present invention, second organic material is selected from one of following compounds:

The hole mobility of hole transport layer material of the invention is 1 × 10^-5To 1 × 10^-2cm²/ (Vs), preferably 1 ×10^-4To 1 × 10^-2cm²/ (Vs) and more preferably 1 × 10^-4To 1 × 10^-3cm²/(V·s)。

Glass transition temperature >=120 DEG C of hole transport layer material of the present invention, preferably >=130 DEG C and more preferably >=140 ℃。

The thickness of hole transport layer material of the present invention can be 1-200nm, preferably 10-100nm.

Electronic barrier layer may be provided on hole transmission layer；The material of electronic barrier layer preferably has high T1 and low The material of LUMO, this can stop electrical losses and energy loss.For example, the electronic barrier layer that the present invention uses can be

The thickness of electronic barrier layer of the invention can be 5-200nm, preferably 10-150nm and more preferably 20- 100nm。

Luminescent layer may be provided on hole transporting zone.The material of luminescent layer is a kind of by being received respectively from hole The hole and electronics of transport layer and electron transfer layer, and by received hole and electronics in conjunction with and the material of visible light can be issued Material.Its specific example includes the metal complex, various metal complexes, anthracene derivant, double benzene second of 8-hydroxyquinoline derivative Alkene benzene derivative, pyrene derivatives, oxazole derivatives and poly- to styrene derivative etc., but not limited to this.In addition, luminescent layer can be with Include material of main part and guest materials.As the material of main part and guest materials of organic electroluminescence device luminescent layer of the present invention, Can be used the emitting layer material commonly known in the art for organic electroluminescence device, the material of main part can for Such as thiazole, benzimidizole derivatives, poly-diakyl fluorene derivative or bis- (9- carbazyl) biphenyl (CBP) of 4,4'-；It is described Guest materials can be derivative for such as quinacridone, cumarin, rubrene and its derivative, 1-benzopyran derivatives, rhodamine Object or aminostyrl derivative.In a preferred embodiment of the invention, used luminescent layer material of main part is selected from One of following EMH-1 to EMH-22 or a variety of combinations:

In addition, in order to improve fluorescence or phosphorescent characteristics, luminescent material may also include phosphorescence or fluorescent material.Phosphor material Specific example includes the phosphor material of the metal complex of iridium, platinum etc..It is, for example, possible to use Ir (ppy)₃[(the 2- phenyl of fac- tri- Pyridine) iridium] etc. green phosphorescent materials, the red phosphorescence materials such as the blue phosphor materials such as FIrpic, FIr6 and Btp2Ir (acac). For fluorescent material, can be used it is usually used in this field those.In a preferred embodiment of the invention, it is used Luminescent layer guest materials be selected from one of following EMD-1 to EMD-23:

In luminescent layer of the invention, the ratio of used material of main part and guest materials is 99:1-70:30, preferably For 99:1-85:15 and more preferably 97:3-87:13, based on quality.

In addition, efficient organic electroluminescence device in order to obtain, in addition to above-mentioned used fluorescence or phosphorescence host and guest Except body material, other guest materials is also can be used in luminescent layer, or uses a variety of guest materials, and guest materials can be simple Fluorescent material, delayed fluorescence (TADF) material or phosphor material, or by different fluorescent materials, TADF material, phosphorescence collocation group It closes, luminescent layer can be single emitting layer material, or the recombination luminescence layer material being laterally or longitudinally superimposed.Structure Following a variety of constructions are enumerated at the luminescent layer of above-mentioned organic electroluminescence device:

(1) single light emitting layer material；

(2) any combination of blue light emitting layer material and green, yellow or emitting red light layer material, and regardless of Tandem, as shown in figure 3,；

(3) any two combinations of blue light emitting layer material and green, yellow or emitting red light layer material, and regardless of Tandem, as shown in Figure 4；

(4) blue light emitting layer material, green light emitting layer material, red light emitting layer material are laterally arranged, As shown in Figure 5；

(5) any combination of blue light emitting layer material and green, yellow or emitting red light layer material, and pass through Articulamentum carries out charge transmission, forms two stacked device architectures, as shown in Figure 6；

(6) any two combinations of blue light emitting layer material and green, yellow or emitting red light layer material, and pass through company It connects layer and carries out charge transmission, form three stacked device architectures, as shown in Figure 7.

Preferably, the organic luminescence function layer includes such luminescent layer comprising blue, green, red, yellow have 1 kind or at least two kinds of of combination in machine emitting layer material.

As described above, G represents light in Fig. 3 into Fig. 5,6 represent luminescent layer, and EM1, EM2 and EM3 represent different shine Layer material.

In figs. 6 and 7,6 luminescent layer is represented, 300 represent organic luminescence function layer, and 610,620 and 630 represent articulamentum.

In order to adjust effective combination of the carrier electric charge in luminescent layer, the luminescent layer 6 of above-mentioned composition OLED illuminant Film thickness can be adjusted arbitrarily as needed, or the luminescent layer for being unable to color is replaced stack combinations as needed, can also be in adjoining The electric charge barrier layer etc. of different function purposes is added in the organic layer of luminescent layer.Preferably, the thickness of luminescent layer of the invention can Think 5-60nm, preferably 10-50nm, more preferably 20-45nm.

In the present invention, electron transporting zone can successively include the hole barrier being arranged on luminescent layer from the bottom to top Layer, electron transfer layer and electron injecting layer, but not limited to this.

Hole blocking layer is to stop to pass through luminescent layer from anode injected holes and enter cathode, thus extends the longevity of device Order and improve the layer of the efficiency of device.It is supreme that hole blocking layer of the invention may be provided at luminescent layer.As Organic Electricity of the present invention The public known chemical combination with hole barrier effect in the prior art can be used in the hole barrier layer material of electroluminescence device Object, for example, bis- (2- methyl -8- the quinoline) -4- phenyl phenates of the phenanthroline derivatives such as bathocuproine (referred to as BCP), aluminium (III) (BAlq) metal complex of 8-hydroxyquinoline derivatives, various rare earth complexes, oxazole derivatives, the triazole derivative, three such as Oxazine derivatives, 9,9'- (5- (6- ([1,1'- biphenyl] -4- base) -2- phenyl pyrimidine -4- base) -1,3- phenylene) bis- (9H- clicks Azoles) pyrimidine derivatives such as (No. CAS: 1345338-69-3) etc..The thickness of hole blocking layer of the invention can be 2-200nm, excellent It is selected as 5-150nm and more preferably 10-100nm.

Electron transfer layer may be provided on luminescent layer or (if present) hole blocking layer.Electron transport layer materials are A kind of easy electronics for receiving cathode and by the material of received electronics transfer to luminescent layer.It is preferred that having high electron mobility Material.As the electron transfer layer of organic electroluminescence device of the present invention, can be used commonly known in the art for having The electron transport layer materials of organic electroluminescence devices, for example, with Alq₃, BAlq be representative 8-hydroxyquinoline derivative metal network Close object, various metal complexes, triazole derivative, bis- (9,9- dimethyl -9H- fluorenes -2- the base) -6- (naphthalene -2- base) -1 of 2,4-, The pyrrolotriazine derivatives such as 3,5- triazine (No. CAS: 1459162-51-6), 2- (4- (9,10- bis- (naphthalene -2- base) anthracene -2- base) phenyl) - Imdazole derivatives, pyrrolotriazine derivatives, the evils such as 1- phenyl -1H- benzo [d] imidazoles (No. CAS: 561064-11-7 is commonly called as LG201) Oxadiazole derivative, thiadiazoles derivative, carbodiimide derivative, quinoxaline derivant, phenanthroline derivative, silicon base compound Derivative etc..The thickness of electron transfer layer of the invention can be 10-80nm, preferably 20-60nm and more preferably 25- 45nm。

Electron injecting layer may be provided on electron transfer layer.Electron injecting layer material usually preferably has low work function Material so that electronics is easily injected into organic functional material layer.Electronics as organic electroluminescence device of the present invention is infused Enter layer material, the electron injecting layer material commonly known in the art for organic electroluminescence device can be used, for example, Lithium；Lithium salts, such as 8-hydroxyquinoline lithium, lithium fluoride, lithium carbonate or Lithium Azide；Or cesium salt, cesium fluoride, cesium carbonate or Azide Caesium.The thickness of electron injecting layer of the invention can be 0.1-5nm, preferably 0.5-3nm and more preferably 0.8-1.5nm.

Second electrode may be provided on electron transporting zone.Second electrode can be cathode.Second electrode EL2 can be Transmission electrode, half transmitting electrode or reflecting electrode.When second electrode is transmission electrode, second electrode may include for example Li, Yb, Ca, LiF/Ca, LiF/Al, Al, Mg, BaF, Ba, Ag or its compound or mixture；When second electrode is half transmitting When electrode or reflecting electrode, second electrode may include Ag, Mg, Yb, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/ Ca, LiF/Al, Mo, Ti or its compound or mixture.

Depending on material used, organic electroluminescence device of the invention can for top emission type, bottom emission type or Dual-side luminescent type.

In the case where organic electroluminescence device is top light emitting type, first electrode can be reflecting electrode, and Two electrodes can be transmission electrode or half transmitting electrode.In the case where organic electroluminescence device is bottom emission type, First electrode can be transmission electrode or half transmitting electrode, and second electrode can be reflecting electrode.

Organic electroluminescence device may also include encapsulating structure.The encapsulating structure can be to prevent external substance such as moisture Enter the protection structure of the organic layer of organic electroluminescence device with oxygen.The encapsulating structure can be such as tank, such as glass jar Or metal can；Or the film of covering organic layer whole surface.

During preparing organic electroluminescence device, such as can be by being laminated first electrode in succession on substrate, having Machine function material layer and second electrode prepare organic electroluminescence device of the invention.About this point, physical vapor can be used Deposition method, such as sputtering method or Electron Beam Vapor method or vacuum vapour deposition, but not limited to this.Also, it can be for example, by vacuum Above compound is used to form organic functional material layer by sedimentation, vacuum vapour deposition or solution coating process.About this point, solution Cladding process means spin-coating method, dip coating, jet printing method, screen printing method, spray-on process and rolling method, but not limited to this.Vacuum Vapor deposition means in vacuum environment, and material is heated and is plated on substrate.In the present invention, it is preferred to carry out shape using vacuum vapour deposition At each layer.

In addition, it is necessary to which explanation, the material of the present invention for being used to form each layer can individually form a film and make It for single layer use, forms a film after can also being mixed with other materials and is used as single layer, can also be between the layer individually to form a film Stepped construction, the stepped construction between the layer that forms a film after mixing or the layer that individually forms a film with mix after the stacking of layer that forms a film Structure.

In another aspect of this invention, it is related to a kind of display comprising one or more organic electroluminescence hairs of the invention Optical device, and in the case where including multiple devices, the device laterally or longitudinally stack combinations.

In a preferred embodiment, display may include organic light emission respectively with blue, green, red three kinds of colors The device of material layer, and the hole transmission layer that the device is all the same with film thickness and material.Preferably implement at another In scheme, display by may include the respectively organic light emitting material with blue, green, red three kinds of colors device, and it is described Device has the hole transmission layer that material is identical but film thickness is different.

In another preferred embodiment, display may include organic hair respectively with blue, green, red three kinds of colors The device of optical material layer, and the device have that film thickness is identical but its material at least there are two types of combined hole transmission layers.In In another preferred embodiment, display may include organic light emitting material respectively with blue, green, red three kinds of colors Device, and the device have that film thickness is different and its material at least there are two types of combined hole transmission layers.

It should be noted that illustrative embodiment has been disclosed herein, although which use specific arts Language, but these terms are only used to and be interpreted only as generic and descriptive meaning, and not for purposes of limitation.Unless otherwise Illustrate, can be used alone in conjunction with feature, characteristic and/or the element that specific embodiment describes or is retouched in conjunction with other embodiments Feature, characteristic and/or the element stated are applied in combination.

Following embodiment is intended to preferably explain the present invention, but the scope of the present invention is not limited thereto.

Embodiment

Detection method used herein is as follows:

Glass transition temperature Tg: pass through differential scanning calorimetry (DSC, German Nai Chi company DSC204F1 differential scanning Calorimeter) measurement, 10 DEG C/min of heating rate；

HOMO energy level: for organic optoelectronic material HOMO energy level test there are many method or instrument means, including CV (cyclic voltammetry), UPS (ultraviolet photoelectron spectroscopy), AC serial equipment (the atmosphere photoelectricity of Japanese Li Yan gauge company production Sub- power spectrum), the IPS serial equipment (vacuum photoelectron spectroscopy) etc. of heart Tian Yi company production other than above-mentioned means, may be used also To pass through Gaussian Computation, and semiempirical judgement is combined, determine the level of HOMO energy level, the accurate HOMO energy level that measures is for research OLED device structure matching is extremely important.In the means that above-mentioned all HOMO energy levels determine, for CV method by solvent effect, data are accurate Degree and reproducibility are poor, other include UPS method, and AC method, IPS method is all ultraviolet photoelectron spectroscopy for cardinal principle Measuring principle, wherein UPS measurement not only needs ultrahigh vacuum, and apparatus value is expensive, and because the people of measurement and instrument are set The difference set, there are larger differences for data parsing result.AC method in principle, needs for sample to be placed in aerobic dry sky There is certain influence to sample in compression ring border, oxygen element, data reproduction and consistency are all poor, and IPS method measures HOMO energy level, It is that membrane material is placed in vacuum environment, ultraviolet monochromatic light is applied directly to sample surfaces, by measuring photoelectricity electron current, from And determine the size of HOMO energy level, belong to direct measurement.Think that IPS mensuration is being surveyed based on the above analysis and practice, inventor When measuring the HOMO energy level of OLED material, reproducibility, consistency and accuracy also highest.The HOMO energy of the related to material of the present invention Grade is the measurement means of IPS.Specific measurement method is as follows:

Using vacuum evaporation equipment, in vacuum degree 1.0E^-5Under Pa pressure, control evaporation rate is Material is deposited Onto ito substrate, film thickness 60-80nm carries out the HOMO energy level of sample film then using IPS3 measuring device is used Measurement, measurement environment are 10-2Pa vacuum environment below；

Eg energy level: uv-spectrophotometric (UV absorption) baseline and the uplifted side picture of the first absorption peak based on material monofilm are cut Line intersects point value with tangent line and baseline and calculates.

Lumo energy: the difference based on aforementioned HOMO energy level and Eg energy level is calculated.

The work function of electrode material: it is tested under atmospheric environment using the surface work function tester that Shanghai University researches and develops.

Hole mobility: being fabricated to single charge devices for material, is measured with SCLC method.

Prepare hole transport layer material

I. the first organic material used in preparing:

Prepare compound HT1-1

In a nitrogen atmosphere, into 500ml three-necked flask be added 0.01mol raw material I-1,0.03mol raw material II -1, 0.03mol sodium tert-butoxide, 5 × 10^-5mol Pd₂(dba)₃With 5 × 10^-5Mol tri-tert phosphorus, 150ml toluene is then added will It is dissolved, and is heated to 100 DEG C, is flowed back 24 hours, using TLC observing response, until the reaction is complete.Cooled to room temperature, mistake Filter, filtrate is rotated to no fraction.Obtained material is purified by silicagel column (petroleum ether is as eluant, eluent), obtains target product, Purity 99.6%, yield 70.4%.

Elemental analysis structure (molecular formula C₆₀H₄₂N₄): theoretical value: C, 87.99；H,5.17；N,6.84；Test value: C, 87.97；H,5.18；N,6.85.

ESI-MS(m/z)(M⁺): theoretical value 818.34, measured value 818.62.

Prepare compound HTI-9

It is prepared by the synthetic method of compound HTI-1, difference is to replace raw material II -1 with raw material II -2, and gained target produces The purity of object is 99.9%, yield 71.7%.

Elemental analysis structure (molecular formula C₅₄H₄₄N₂): theoretical value: C, 89.96；H,6.15；N,3.89；Test value: C, 89.97；H,6.13；N,3.90.

ESI-MS(m/z)(M⁺): theoretical value 720.35, measured value 720.65.

Prepare compound HTI-28

In a nitrogen atmosphere, raw material II -3 0.01mol raw material I-2,0.03mol are added into 500ml there-necked flask, with mixing Solvent (90ml toluene, 45ml ethyl alcohol) dissolution, is then added 0.04mol Na₂CO₃Aqueous solution (2M).It is small to stir the mixture for 1 When, then it is added 1 × 10^-4molPd(PPh₃)₄, it is heated to reflux 15 hours.Using TLC observing response, until the reaction is complete.From So cooling, filtering rotates filtrate to no fraction.Obtained material is purified by silicagel column (petroleum ether is as eluant, eluent), is obtained Target product, purity 99.6%, yield 72.2%.

Elemental analysis structure (molecular formula C₄₂H₂₅NO₃): theoretical value: C, 85.26；H,4.26；N,2.37；Test value: C, 85.24；H,4.24；N,2.39.

ESI-MS(m/z)(M⁺): theoretical value 591.18, measured value 591.35.

Prepare compound HTI-41

It is prepared by the synthetic method of compound HTI-1, difference is to replace raw material II -1, gained target with raw material II I-4 The purity of product is 99.5%, yield 68.8%.

Elemental analysis structure (molecular formula C₇₂H₅₄N₄): theoretical value: C, 88.67；H,5.58；N,5.74；Test value: C, 88.64；H,5.60；N,5.73.

ESI-MS(m/z)(M⁺): theoretical value 974.43, measured value 974.61.

Prepare compound HTI-52

It is prepared by the synthetic method of compound HTI-1, difference is to replace raw material II -1, gained target with raw material II I-5 The purity of product is 99.8%, yield 72.9%.

Elemental analysis structure (molecular formula C₅₆H₄₀N₂): theoretical value: C, 90.78；H,5.44；N,3.78；Test value: C, 90.76；H,5.45；N,3.79.

ESI-MS(m/z)(M⁺): theoretical value 740.32, measured value 740.62.

Prepare compound HTI-57

In a nitrogen atmosphere, into 500ml three-necked flask be added 0.015mol raw material I-3,0.01mol raw material II -6, 0.03mol sodium tert-butoxide, 5 × 10^-5mol Pd₂(dba)₃With 5 × 10^-5Mol tri-tert phosphorus, 150ml toluene is then added will It is dissolved, and is heated to 100 DEG C, is flowed back 24 hours, using TLC observing response, until the reaction is complete.Cooled to room temperature, mistake Filter, filtrate is rotated to no fraction.Obtained material is purified by silicagel column (petroleum ether is as eluant, eluent), obtains target product, Purity 99.7%, yield 77.5%.

Elemental analysis structure (molecular formula C₆₀H₄₄N₂): theoretical value: C, 90.87；H,5.59；N,3.53；Test value: C, 90.86；H,5.58；N,3.56.

ESI-MS(m/z)(M⁺): theoretical value 792.35, measured value 792.67.

Prepare compound HTI-63

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-4, with raw material II -7 Instead of raw material II -6, the purity of gained target product is 99.9%, yield 73.9%.

Elemental analysis structure (molecular formula C₅₂H₃₇N): theoretical value: C, 92.41；H,5.52；N,2.07；Test value: C, 92.42；H,5.50；N,2.08.

ESI-MS(m/z)(M⁺): theoretical value 675.29, measured value 675.58.

Prepare compound HTI-72

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-5, with raw material II -7 Instead of raw material II -6, the purity of gained target product is 99.6%, yield 72.6%.

Elemental analysis structure (molecular formula C₅₄H₃₉N): theoretical value: C, 92.40；H,5.60；N,2.00；Test value: C, 92.38；H,5.61；N,2.01.

ESI-MS(m/z)(M⁺): theoretical value 701.31, measured value 701.55.

Prepare compound HTI-86

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-6, with raw material II -8 Instead of raw material II -6, the purity of gained target product is 99.9%, yield 75.4%.

Elemental analysis structure (molecular formula C₅₂H₃₉N): theoretical value: C, 92.13；H,5.80；N,2.07；Test value: C, 92.11；H,5.82；N,2.07.

ESI-MS(m/z)(M⁺): theoretical value 677.31, measured value 677.51.

Prepare compound HTI-101

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-7, with raw material II -9 Instead of raw material II -6, the purity of gained target product is 99.7%, yield 74.3%.

Elemental analysis structure (molecular formula C₅₅H₄₁NO): theoretical value: C, 90.25；H,5.65；N,1.91；Test value: C, 90.24；H,5.64；N,1.90.

ESI-MS(m/z)(M⁺): theoretical value 731.32, measured value 731.66.

Prepare compound HTI-114

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-8, with raw material II -7 Instead of raw material II -6, the purity of gained target product is 99.6%, yield 77.6%.

Elemental analysis structure (molecular formula C₅₅H₄₃N): theoretical value: C, 92.01；H,6.04；N,1.95；Test value: C, 92.02；H,6.02；N,1.96.

ESI-MS(m/z)(M⁺): theoretical value 717.34, measured value 717.54.

Prepare compound HTI-124

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-9, with raw material II -9 Instead of raw material II -6, the purity of gained target product is 99.7%, yield 78.8%.

Elemental analysis structure (molecular formula C₅₄H₄₁NO): theoretical value: C, 90.09；H,5.74；N,1.95；Test value: C, 90.07；H,5.76；N,1.97.

ESI-MS(m/z)(M⁺): theoretical value 719.32, measured value 719.53.

Prepare compound HTI-134

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-10, with raw material II -9 Instead of raw material II -6, the purity of gained target product is 99.6%, yield 75.1%.

Elemental analysis structure (molecular formula C₆₃H₅₇N): theoretical value: C, 91.37；H,6.94；N,1.69；Test value: C, 91.35；H,6.96；N,1.68.

ESI-MS(m/z)(M⁺): theoretical value 827.45, measured value 827.77.

Prepare compound HTI-144

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-11, with raw material II -7 Instead of raw material II -6, the purity of gained target product is 99.8%, yield 74.9%.

Elemental analysis structure (molecular formula C₅₈H₄₇N): theoretical value: C, 91.90；H,6.25；N,1.85；Test value: C, 91.92；H,6.24；N,1.84.

ESI-MS(m/z)(M⁺): theoretical value 757.37, measured value 757.57.

Prepare compound HTI-162

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-12, with raw material II -9 Instead of raw material II -6, the purity of gained target product is 99.7%, yield 75.7%.

Elemental analysis structure (molecular formula C₄₉H₄₁N): theoretical value: C, 91.41；H,6.42；N,2.18；Test value: C, 91.43；H,6.41；N,2.16.

ESI-MS(m/z)(M⁺): theoretical value 643.32, measured value 643.60.

Prepare compound HTI-176

It is prepared by the synthetic method of compound HTI-57, difference is to replace raw material I-3 with raw material I-13, with raw material II -9 Instead of raw material II -6, the purity of gained target product is 99.6%, yield 73.6%.

Elemental analysis structure (molecular formula C₆₀H₄₉N₃): theoretical value: C, 88.74；H,6.08；N,5.17；Test value: C, 88.71；H,6.09；N,5.20.

ESI-MS(m/z)(M⁺): theoretical value 811.39, measured value 811.65.

II. the second organic material used in preparing:

Prepare compound HTII-7

In a nitrogen atmosphere, into 500ml three-necked flask be added 0.015mol raw material IV-1,0.01mol raw material V-1, 0.03mol sodium tert-butoxide, 5 × 10^-5mol Pd₂(dba)₃With 5 × 10^-5Mol tri-tert phosphorus.Then 150ml toluene is added will It is dissolved, and is heated to 100 DEG C, is flowed back 24 hours.Using TLC observing response, until the reaction is complete.Cooled to room temperature, mistake Filter, filtrate is rotated to no fraction.Obtained material is purified by silicagel column (petroleum ether is as eluant, eluent), obtains target product, Purity 99.5%, yield 77.3%.

Elemental analysis structure (molecular formula C₅₃H₄₁N₃): theoretical value: C, 88.42；H,5.74；N,5.84；Test value: C, 88.43；H,5.75；N,5.82.

ESI-MS(m/z)(M⁺): theoretical value 719.33, measured value 719.64.

Prepare compound HTII-21

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-2, uses raw material IV-2 replaces raw material IV-1, and the purity of gained target product is 99.9%, yield 75.5%.

Elemental analysis structure (molecular formula C₅₄H₃₉N): theoretical value: C, 92.40；H,5.60；N,2.00；Test value: C, 92.41；H,5.61；N,1.98.

ESI-MS(m/z)(M⁺): theoretical value 701.31, measured value 701.52.

Prepare compound HTII-37

In a nitrogen atmosphere, into 500ml three-necked flask be added 0.03mol raw material II I-3,0.01mol raw material IV-4, 0.04mol sodium tert-butoxide, 5 × 10^-5mol Pd₂(dba)₃With 5 × 10^-5Mol tri-tert phosphorus, 150ml toluene is then added will It is dissolved, and is heated to 100 DEG C, is flowed back 24 hours, using TLC observing response, until the reaction is complete.Cooled to room temperature, mistake Filter, filtrate is rotated to no fraction.Obtained material is purified by silicagel column (petroleum ether is as eluant, eluent), obtains target product, Purity 99.7%, yield 74.6%.

Elemental analysis structure (molecular formula C₅₄H₃₅NO₂): theoretical value: C, 88.86；H,4.83；N,1.92；Test value: C, 88.85；H,4.84；N,1.91.

ESI-MS(m/z)(M⁺): theoretical value 729.27, measured value 729.45.

Prepare compound HTII-41

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-4, uses raw material IV-4 replaces raw material IV-1, and the purity of gained target product is 99.8%, yield 76.1%.

Elemental analysis structure (molecular formula C₅₁H₃₇NO): theoretical value: C, 90.10；H,5.49；N,2.06；Test value: C, 90.11；H,5.47；N,2.07.

ESI-MS(m/z)(M⁺): theoretical value 679.29, measured value 679.63.

Prepare compound HTII-52

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-5, uses raw material IV-5 replaces raw material IV-1, and the purity of gained target product is 99.7%, yield 75.6%.

Elemental analysis structure (molecular formula C₅₄H₃₆N₂O): theoretical value: C, 88.98；H,4.98；N,3.84；Test value: C, 88.96；H,4.99；N,3.85.

ESI-MS(m/z)(M⁺): theoretical value 728.28, measured value 728.56.

Prepare compound HTII-78

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-6, uses raw material IV-6 replaces raw material IV-1, and the purity of gained target product is 99.9%, yield 75.1%.

Elemental analysis structure (molecular formula C₅₂H₃₇N): theoretical value: C, 92.41；H,5.52；N,2.07；Test value: C, 92.42；H,5.53；N,2.05.

ESI-MS(m/z)(M⁺): theoretical value 675.29, measured value 675.65.

Prepare compound HTII-102

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-7, uses raw material IV-4 replaces raw material IV-1, and the purity of gained target product is 99.7%, yield 77.4%.

Elemental analysis structure (molecular formula C₄₉H₃₅N): theoretical value: C, 92.41；H,5.52；N,2.07；Test value: C, 92.42；H,5.53；N,2.05.

ESI-MS(m/z)(M⁺): theoretical value 637.28, measured value 637.55.

Prepare compound HTII-132

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1, gained mesh with raw material II I-8 The purity for marking product is 99.7%, yield 75.6%.

Elemental analysis structure (molecular formula C₅₅H₄₁NO): theoretical value: C, 90.25；H,5.65；N,1.91；Test value: C, 90.23；H,5.66；N,1.90.

ESI-MS(m/z)(M⁺): theoretical value 731.32, measured value 731.64.

Prepare compound HTII-148

It being prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-9, use raw material It is 99.6% that IV-6, which replaces the purity of target product obtained by raw material IV-1, yield 73.8%.

Elemental analysis structure (molecular formula C₅₂H₃₉NO): theoretical value: C, 90.01；H,5.67；N,2.02；Test value: C, 90.03；H,5.64；N,2.03.

ESI-MS(m/z)(M⁺): theoretical value 693.61, measured value 693.30.

Prepare compound HTII-164

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-10, uses raw material IV-7 replaces raw material IV-1, and the purity of gained target product is 99.5%, yield 73.8%.

Elemental analysis structure (molecular formula C₅₅H₄₃N): theoretical value: C, 92.01；H,6.04；N,1.95；Test value: C, 92.02；H,6.02；N,1.96.

ESI-MS(m/z)(M⁺): theoretical value 717.34, measured value 717.57.

Prepare compound HTII-192

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-11, uses raw material IV-8 replaces raw material IV-1, and the purity of gained target product is 99.6%, yield 76.1%.

Elemental analysis structure (molecular formula C₅₄H₃₉N): theoretical value: C, 92.40；H,5.60；N,2.00；Test value: C, 92.41；H,5.58；N,2.01.

ESI-MS(m/z)(M⁺): theoretical value 701.31, measured value 701.54.

Prepare compound HTII-232

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1, gained mesh with raw material II I-12 The purity for marking product is 99.7%, yield 73.3%.

Elemental analysis structure (molecular formula C₆₃H₅₇N): theoretical value: C, 91.37；H,6.94；N,1.69；Test value: C, 91.36；H,6.93；N,1.70.

ESI-MS(m/z)(M⁺): theoretical value 827.45, measured value 827.71.

Prepare compound HTII-243

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-13, uses raw material IV-7 replaces raw material IV-1, and the purity of gained target product is 99.5%, yield 73.6%.

Elemental analysis structure (molecular formula C₆₂H₅₅N): theoretical value: C, 91.47；H,6.81；N,1.72；Test value: C, 91.45；H,6.82；N,1.73.

ESI-MS(m/z)(M⁺): theoretical value 813.43, measured value 813.66.

Prepare compound HTII-266

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-14, uses raw material IV-9 replaces raw material IV-1, and the purity of gained target product is 99.6%, yield 75.9%.

Elemental analysis structure (molecular formula C₄₅H₃₂N₂O): theoretical value: C, 87.63；H,5.23；N,4.54；Test value: C, 87.61；H,5.24；N,4.55.

ESI-MS(m/z)(M⁺): theoretical value 616.25, measured value 616.51.

Prepare compound HTII-277

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-15, uses raw material IV-10 replaces raw material IV-1, and the purity of gained target product is 99.9%, yield 77.1%.

Elemental analysis structure (molecular formula C₄₆H₃₁NO): theoretical value: C, 90.02；H,5.09；N,2.28；Test value: C, 90.01；H,5.07；N,2.29；.

ESI-MS(m/z)(M⁺): theoretical value 613.24, measured value 613.44.

Prepare compound HTII-314

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-16, uses raw material IV-11 replaces raw material IV-1, and the purity of gained target product is 99.8%, yield 76.3%.

Elemental analysis structure (molecular formula C₄₆H₃₁NO₂): theoretical value: C, 87.73；H,4.96；N,2.22；Test value: C, 87.71；H,4.97；N,2.23.

ESI-MS(m/z)(M⁺): theoretical value 629.24, measured value 629.52.

Prepare compound HTII-335

It is prepared by the synthetic method of compound HTII-7, difference is to replace raw material II I-1 with raw material II I-10, uses raw material IV-12 replaces raw material IV-1, and the purity of gained target product is 99.7%, yield 78.4%.

Elemental analysis structure (molecular formula C₄₉H₃₇NO): theoretical value: C, 89.74；H,5.69；N,2.14；Test value: C, 89.74；H,5.69；N,2.14.

ESI-MS(m/z)(M⁺): theoretical value 655.29, measured value 655.57.

Table 1 shows the first and second organic materials of preparation, is adjacent electronic blocking layer material (EB1) shines The material of main part (EMH-1, EMH-7 and EMH-13) of material and each energy level of guest materials (EMD-1, EMD-8 and EMD-13) Test result.

Table 1

It can be seen from the result of table 1 the HOMO energy level of first organic material of the invention -5.2eV to -5.6eV it Between, and the HOMO energy level of the second organic material is in -5.4eV extremely -5.9eV, and ︱ HOMO_{First organic material}︱ < ︱ HOMO_{Second organic material}︱； And absolute value≤0.4ev of difference between second organic material and the HOMO energy level of electronic blocking layer material.

Embodiment 1

Using CIC evaporated device (long state industry manufactures), respectively by the first organic material HTI-1 and the second organic material HTII-7 is placed in two evaporation sources, in vacuum degree 1.0E^-5Under Pa pressure, control 1 evaporation rate of the first organic material isControlling 1 evaporation rate of the second organic material isCommon mixed steam obtains hole transmission layer material of the invention Material 1.

Embodiment 2

The preparation process for repeating embodiment 1, the difference is that the evaporation rate of the first organic material HTI-1 isThe evaporation rate of second organic material HTII-7 isObtain hole transport layer material 2.

Embodiment 3

The preparation process for repeating embodiment 1, the difference is that the evaporation rate of the first organic material HTI-1 isThe evaporation rate of second organic material HTII-7 isObtain hole transport layer material 3.

Embodiment 4

The preparation process for repeating embodiment 1, the difference is that the evaporation rate of the first organic material HTI-1 isThe evaporation rate of second organic material HTII-7 isObtain hole transport layer material 4.

Embodiment 5

The preparation process for repeating embodiment 1, the difference is that the evaporation rate of the first organic material HTI-1 isThe evaporation rate of second organic material HTII-7 isObtain hole transport layer material 5.

Embodiment 6

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-9 and the second organic material HTII-37 obtains hole transport layer material 6.

Embodiment 7

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-28 and second organic material Expect HTII-21, obtains hole transport layer material 7.

Embodiment 8

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-41 and second organic material Expect HTII-41, obtains hole transport layer material 8.

Embodiment 9

The preparation process for repeating embodiment 3, the difference is that using the first organic material HTI-41 and second organic material Expect HTII-41, obtains hole transport layer material 9.

Embodiment 10

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-52 and second organic material Expect HTII-52, obtains hole transport layer material 10.

Embodiment 11

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-57 and second organic material Expect HTII-78, obtains hole transport layer material 11.

Embodiment 12

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-63 and second organic material Expect HTII-102, obtains hole transport layer material 12.

Embodiment 13

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-72 and second organic material Expect HTII-132, obtains hole transport layer material 13.

Embodiment 14

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-72 and second organic material Expect HTII-148, obtains hole transport layer material 14.

Embodiment 15

The preparation process for repeating embodiment 2, the difference is that using the first organic material HTI-72 and second organic material Expect HTII-164, obtains hole transport layer material 15.

Embodiment 16

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-86 and second organic material Expect HTII-164, obtains hole transport layer material 16.

Embodiment 17

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-101 and second organic material Expect HTII-192, obtains hole transport layer material 17.

Embodiment 18

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-114 and second organic material Expect HTII-192, obtains hole transport layer material 18.

Embodiment 19

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-124 and second organic material Expect HTII-232, obtains hole transport layer material 19.

Embodiment 20

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-134 and second organic material Expect HTII-243, obtains hole transport layer material 20.

Embodiment 21

The preparation process for repeating embodiment 2, the difference is that using the first organic material HTI-134 and second organic material Expect HTII-243, obtains hole transport layer material 21.

Embodiment 22

The preparation process for repeating embodiment 2, the difference is that using the first organic material HTI-134 and second organic material Expect HTII-243, obtains hole transport layer material 22.

Embodiment 23

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-134 and second organic material Expect HTII-266, obtains hole transport layer material 23.

Embodiment 24

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-144 and second organic material Expect HTII-277, obtains hole transport layer material 24.

Embodiment 25

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-162 and second organic material Expect HTII-314, obtains hole transport layer material 25.

Embodiment 26

The preparation process for repeating embodiment 5, the difference is that using the first organic material HTI-162 and second organic material Expect HTII-314, obtains hole transport layer material 26.

Embodiment 27

The preparation process for repeating embodiment 1, the difference is that using the first organic material HTI-176 and second organic material Expect HTII-335, obtains hole transport layer material 27.

Prepare organic electroluminescence device

It should be noted that vacuum evaporation carries out under the following conditions: CIC evaporated device (long state industry manufactures) is used, In vacuum degree 1.0E^-5Under Pa pressure, control evaporation rate is

Device prepares embodiment 1

It is carried out according to following procedure:

A) use transparent glass as substrate, coating thickness is then the ITO of 150nm distinguishes as anode layer on it It is cleaned each 15 minutes with deionized water, acetone, EtOH Sonicate, is then handled 2 minutes in plasma cleaner；

B) in washed first electrode layer, HAT-CN is deposited by vacuum deposition method, with a thickness of 10nm, this layer is made For hole injection layer；

C) it on hole injection layer, is prepared by vacuum evaporation mode vapor deposition and is obtained in the embodiment 1 of hole transport layer material The hole transport layer material 1 obtained, with a thickness of 90nm, which is hole transmission layer；

D) on the hole transport layer, EB1 is deposited by vacuum evaporation mode, with a thickness of 20nm, which is electronic barrier layer；

E) on electronic barrier layer, emitting layer material is deposited by vacuum evaporation mode, material of main part is EMH-7 and EMH- 9, guest materials EMD-8, EMH-7, EMH-9 and EMD-8 mass ratio is 45:45:10, with a thickness of 40nm；

F) on the light-emitting layer, LG201 and Liq being deposited by vacuum evaporation mode, LG201 and Liq mass ratio is 50:50, With a thickness of 40nm, the layer is as electron transfer layer；

G) on the electron transport layer, LiF is deposited by vacuum evaporation mode, with a thickness of 1nm, which is electron injecting layer；

H) on electron injecting layer, vacuum evaporation Al, with a thickness of 100nm, which is the second electrode lay.

Device prepares embodiment 2-10

It is carried out according to the process of device preparation embodiment 1, the difference is that being used respectively in step c) empty in preparation The hole transport layer material 2-10 obtained in the embodiment 2-10 of cave transmission layer material.

Device prepares embodiment 11

It is carried out according to the process of device preparation embodiment 1, the difference is that in the film thickness of step c) hole-transporting layer For 160nm；Material of main part is EMH-13, guest materials EMD-8 in step e), and EMH-13 and EMD-8 mass ratio is 90: 10, with a thickness of 40nm.

Device prepares embodiment 12-13

It is carried out according to the process of device preparation embodiment 11, the difference is that being used respectively in step c) empty in preparation The hole transport layer material 2-3 obtained in the embodiment 2-3 of cave transmission layer material.

Device prepares embodiment 14-20

It is carried out according to the process of device preparation embodiment 11, the difference is that use passes in preparation hole in step c) The hole transport layer material 12-18 obtained in the embodiment 12-18 of defeated layer material.

Device prepares embodiment 21

It is carried out according to the process of device preparation embodiment 1, the difference is that in the film thickness of step c) hole-transporting layer For 50nm；It is EMD-1 that material of main part, which is EMH-1 guest materials, in step e), and EMH-1 and EMD-1 mass ratio is 95:5, thick Degree is 25nm.

Device prepares embodiment 22-30

It is carried out according to the process of device preparation embodiment 21, the difference is that being used respectively in step c) empty in preparation The hole transport layer material 19-27 obtained in the embodiment 19-27 of cave transmission layer material.

Comparing embodiment 1-10

It is carried out according to the process of device preparation embodiment 1, the difference is that first listed by being used only in the following table 2 is organic Material or the second organic material are as hole transport layer material.

Table 2:

Comparing embodiment 11-25

It is carried out according to the process of device preparation embodiment 11, the difference is that first listed by being used only in the following table 3 has Machine material or the second organic material are as hole transport layer material.

Table 3:

Comparing embodiment 26-38

It is carried out according to the process of device preparation embodiment 21, the difference is that first listed by being used only in the following table 4 has Machine material or the second organic material are as hole transport layer material.

Table 4:

Table 5-7 is shown in 10mA/cm²The performance knot of made organic electroluminescence device is measured under current density Fruit.

Table 5: the results of property of organic electroluminescence device prepared by inventive embodiments 1-10 and comparing embodiment 1-10

Note: * represents comparing embodiment

LT95 refers to that in current density be 10mA/cm²In the case of, device brightness decay to 95% used in the time；

Life-span test system is owner of the present invention and the OLED device life-span tester that Shanghai University is studied jointly.

The annotation is also applied for following table 6 and 7.

Table 6: the performance knot of organic electroluminescence device prepared by inventive embodiments 11-20 and comparing embodiment 11-25 Fruit

Table 7: the performance knot of organic electroluminescence device prepared by inventive embodiments 21-30 and comparing embodiment 26-38 Fruit

Comparing embodiment 1 it can be seen from the result of table 5 with exclusive use organic material as hole transport layer material It is compared to 10, the driving voltage of device obtained by device preparation embodiment 1 to 10 of the invention is substantially reduced, and luminance Degree, luminous efficiency (i.e. current efficiency) and service life are significantly increased.It can be seen from the result of table 6 with comparing embodiment 11 to 25 compare, and the driving voltage of device obtained by device preparation embodiment 11 to 20 of the invention is significantly reduced, and is shone Brightness, luminous efficiency (i.e. current efficiency) and service life are significantly increased.It can be seen from the result of table 7 with comparing embodiment 26 It is compared to 38, the driving voltage of device obtained by device preparation embodiment 21 to 30 of the invention is significantly reduced, and is sent out Brightness, luminous efficiency (i.e. current efficiency) and service life are significantly increased.

Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting.Art technology Personnel in the case where not departing from the objective and range of technical solution of the present invention, to technical solution of the present invention carry out modification or Person's equivalent replacement, is intended to be within the scope of the claims of the invention.

Claims (13)

1. a kind of organic electroluminescence device, be disposed with from the bottom to top substrate, first electrode, organic functional material layer and Second electrode, the organic functional material layer include:

Hole transporting zone is located on the first electrode；

Luminescent layer is located on the hole transporting zone comprising material of main part and guest materials；

Electron transporting zone is located on the luminescent layer,

Wherein, the hole transporting zone from the bottom to top successively include hole injection layer, hole transmission layer and electronic barrier layer,

The hole transmission layer includes the first and second organic materials, wherein the HOMO energy level of the first organic material is -5.2eV To -5.6eV, preferably -5.3eV to -5.5eV, more preferably -5.35eV extremely -5.5eV, and the HOMO energy of the second organic material Grade is -5.4eV to -5.9eV, preferably -5.4eV to -5.7eV, more preferably -5.48eV extremely -5.68eV, and ︱ HOMO_{First organic material}︱ < ︱ HOMO_{Second organic material}︱.

2. organic electroluminescence device according to claim 1, wherein second organic material and electronic barrier layer material Absolute value≤0.4v of difference between the HOMO energy level of material.

3. organic electroluminescence device according to claim 1 or 2, wherein the ratio of first and second organic material For 1:99 to 99:1, preferably 10:90 to 90:10, more preferably 30:70 to 70:30, based on quality.

4. organic electroluminescence device according to any one of claim 1 to 3, wherein the first and second organic materials are each From in independently selected from general formula (1), general formula (2) or general formula (3) any one:

Wherein, in general formula (1)

X、X₁It is each independently selected from singly-bound, carbon atom, N- (R₅), sulphur atom, oxygen atom, ethenylidene, linear chain or branched chain C_1-20The C of alkyl-substituted alkylidene, linear chain or branched chain_1-20Alkyl-substituted silicylene, C_6-20In the alkylidene that aryl replaces One kind；

If there is R₅, then its may be the same or different selected from hydrogen atom, protium atom, D-atom, tritium atom, fluorine atom, phosphoric acid or The C of its salt, linear chain or branched chain_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl-substituted silylation has 5 to 30 The aryl of a carbon atom, with 5 to 30 carbon atoms and at least one be selected from N, O and S heteroatomic heteroaryl, wherein rear In the case where the two, the group can be optionally by the C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；

Z represents nitrogen-atoms or C-R₆, wherein R₆It is former to be selected from hydrogen atom, protium atom, D-atom, tritium atom, fluorine with may be the same or different Son, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl-substituted silicon Alkyl, the aryl with 5 to 30 carbon atoms, with 5 to 30 carbon atoms and at least one be selected from N, O and S it is heteroatomic Heteroaryl, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20Alkyl, C_6-20Aryl, C_5-20 Heteroaryl replaces, two of them or more R₆Group can be connected to each other and can form ring structure；

Ar₁、Ar₂、Ar₃、Ar₄It is independently represented each other the C of singly-bound, linear chain or branched chain_1-20The C of alkylidene, linear chain or branched chain_1-20Alkane Base replace silicylene, the arlydene with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and at least one be selected from N, O With the heteroatomic inferior heteroaryl of S, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20Alkane Base, C_6-20Aryl, C_5-20Heteroaryl replaces, wherein Ar₁、Ar₂Group can also be directly connected to cyclization or be connected by C, O, S, N Ring；

M, n, p, q, s and t are equal to 0 or 1；And m+n+p+q >=1 and m+n+s+t >=1；

R₁、R₂、R₃And R₄It is independently represented each other hydrogen atom, general formula (4), structure shown in general formula (5) or general formula (6), condition is R₁、R₂、R₃And R₄It is not simultaneously hydrogen atom；

Wherein, in general formula (4) and general formula (5):

X₂、X₃Be independently represented each other singly-bound, oxygen atom, sulphur atom, ethenylidene, linear chain or branched chain C_1-20It is alkyl-substituted The C of alkylidene, linear chain or branched chain_1-20Alkyl-substituted silylation, C_6-20Alkylidene, the C of aryl substitution_1-20Alkyl-substituted Asia Amido, C_6-20Imido grpup, the C of aryl substitution_5-20One of the imido grpup that heteroaryl replaces；

Y₁Represent N atom or C-R with may be the same or different₇, wherein R₇Represent hydrogen atom, protium atom, deuterium with may be the same or different former Son, tritium atom, fluorine atom, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20Alkyl-substituted alkyl, linear chain or branched chain C_1-20Alkane Base replace silylation, the aryl with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and at least one be selected from N, O and S Heteroatomic heteroaryl, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Two of them or more R₇Group can be connected to each other and can form ring structure；

R₈、R₉It is independently represented each other hydrogen atom, protium atom, D-atom, tritium atom, fluorine atom, phosphoric acid or its salt, straight chain or branch The C of chain_1-20The C of alkyl-substituted alkyl, linear chain or branched chain_1-20Alkyl-substituted silylation, the virtue with 5 to 30 carbon atoms Base, with 5 to 30 carbon atoms and at least one be selected from shown in the heteroatomic heteroaryl of N, O and S, general formula (7) or general formula (6) Structure；Wherein in the case where aryl and heteroaryl, the group can be optionally by the C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；

Wherein, in general formula (7):

Y₂Represent N atom or C-R with may be the same or different₁₄, wherein R₁₄Represent hydrogen atom, protium atom, deuterium with may be the same or different Atom, tritium atom, fluorine atom, cyano, phosphoric acid or its salt, linear chain or branched chain C_1-20Alkyl-substituted alkyl, linear chain or branched chain C_1-20Alkyl-substituted silylation, the aryl with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and at least one be selected from N, the heteroatomic heteroaryl of O and S, wherein the group can be optionally by the C of linear chain or branched chain in the case where rear the two_1-20 Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Two of them or more R₁₂Group can be connected to each other and can form ring knot Structure；

X₄、X₅Be independently represented each other singly-bound, oxygen atom, sulphur atom, ethenylidene, linear chain or branched chain C_1-20It is alkyl-substituted The C of alkylidene, linear chain or branched chain_1-20Alkyl-substituted silicylene, C_6-20Alkylidene, the C of aryl substitution_1-20It is alkyl-substituted Imido grpup, C_6-20Imido grpup, the C of aryl substitution_5-20One of the imido grpup that heteroaryl replaces；

General formula (7) is connected by simultaneously ring mode with general formula (4) or general formula (5), and * is expressed as connection site, when being connected, can only take phase Two adjacent sites, general formula (7) and general formula (4) or general formula (5) are when simultaneously ring connects, connection site Y₁It is expressed as carbon atom；

In general formula (8):

R₁₂、R₁₃It is independently represented each other the aryl with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms and at least one choosing From the heteroatomic heteroaryl of N, O and S, the group can be optionally by the C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20It is miscellaneous Aryl replaces；R₁₂、R₁₃Cyclization can also be connected；

In general formula (2):

L₁、L₂、L₃It is independently represented each other singly-bound, the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms and extremely Few one is selected from the heteroatomic inferior heteroaryl of N, O and S, wherein the group can be optionally by straight chain in the case where rear the two Or the C of branch_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；L₁、L₂、L₃It can be connected to each other two-by-two and ring knot can be formed Structure；

Ar₅、Ar₆、Ar₇It is independently represented each other arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms and at least The imido grpup of one heteroatomic inferior heteroaryl selected from N, O and S, 5 to 30 carbon atoms, the group can optionally by straight chain or The C of branch_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Ar₅、Ar₆、Ar₇It can be connected to each other two-by-two and ring knot can be formed Structure；

Ar₅、Ar₆、Ar₇It respectively can also be independently expressed as one of general formula (4), general formula (5), general formula (6), wherein the general formula On group X₂、X₃、Y₁、R₈、R₉、R₁₀、R₁₁There is meaning as described above with *；

In general formula (3):

D₁、D₂、D₃It is independently represented each other singly-bound, the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon atoms and extremely Few one is selected from the heteroatomic inferior heteroaryl of N, O and S, wherein the group can be optionally by straight chain in the case where rear the two Or the C of branch_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；D₁、D₂、D₃It can be connected to each other two-by-two and ring knot can be formed Structure；

Ar₈、Ar₉、Ar₁₀It is independently represented each other hydrogen atom, the arlydene with 5 to 30 carbon atoms, there are 5 to 30 carbon originals Son and at least one be selected from the imido grpup of the heteroatomic inferior heteroaryl of N, O and S, 5 to 30 carbon atoms, the group can be optional By the C of linear chain or branched chain_1-20Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；Ar₈、Ar₉、Ar₁₀It can be connected to each other two-by-two and can Form ring structure；

Ar₈、Ar₉、Ar₁₀In at least one be general formula (4), general formula (5), one in general formula (6)；The wherein base on the general formula Group X₂、X₃、Y₁、R₈、R₉、R₁₀、R₁₁Respectively there is meaning as described above with *.

5. organic electroluminescence device according to claim 4, formula of (2) is expressed as general formula (9) to general formula (12) One of:

Wherein

Ar₅To Ar₇Indicate arlydene with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and at least one selected from N, O and The imido grpup of the heteroatomic inferior heteroaryl of S, 5 to 30 carbon atoms, the group can be optionally by the C of linear chain or branched chain_1-20Alkane Base, C_6-20Aryl, C_5-20Heteroaryl replaces；

And L₁-L₃、R₆-R₉、Y₁And X₂-X₃All have meaning as claimed in claim 4.

6. organic electroluminescence device according to claim 4 or 5, wherein the general formula (3) is expressed as general formula (13) extremely One of general formula (16):

Wherein

Ar₈And Ar₁₀Indicate arlydene with 5 to 30 carbon atoms, have 5 to 30 carbon atoms and at least one selected from N, O With the imido grpup of the heteroatomic inferior heteroaryl of S, 5 to 30 carbon atoms, the group can be optionally by the C of linear chain or branched chain_1-20 Alkyl, C_6-20Aryl, C_5-20Heteroaryl replaces；And

And D₁-D₃、R₆-R₉、Y₁And X₂-X₃All have meaning as claimed in claim 4.

7. the organic electroluminescence device according to any one of claim 4 to 6, wherein in the general formula (1)Part is selected from one of the following:

And wherein Z, Ar₁、Ar₂And R₅With the meaning described in claim 4.

8. organic electroluminescence device described in any one of -7 according to claim 1, it is characterised in that the hole transmission layer The first organic material be selected from one of following compounds:

9. organic electroluminescence device according to claim 1 to 8, it is characterised in that the hole transmission layer The second organic material be selected from one of following compounds:

10. organic electroluminescence device according to claim 1 to 9, which is characterized in that the hole transport The first organic material and the second organic material of layer make after can mixing for electroluminescent device, can also be organic in production It is mixed during electroluminescent device.

11. organic electroluminescence device according to claim 1 to 10, wherein the device includes blue, green One of color, red or yellow organic light emitting material or multiple combinations；Different organic light emitting materials are laterally or longitudinally folded Add combination.

12. a kind of display, including it is one or more such as organic electroluminescence device of any of claims 1-11； And in the case where including multiple devices, the device laterally or longitudinally stack combinations.

13. display according to claim 12, which is characterized in that the display includes respectively having blue, green, red three One of device of organic light emitting material of kind color or multiple combinations, the device respectively have identical or different film thickness Hole transmission layer, and the material of the hole transmission layer is identical or different.