CN110416129A - A kind of wafer defect labelling apparatus and wafer defect labeling method - Google Patents
A kind of wafer defect labelling apparatus and wafer defect labeling method Download PDFInfo
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- CN110416129A CN110416129A CN201910698776.8A CN201910698776A CN110416129A CN 110416129 A CN110416129 A CN 110416129A CN 201910698776 A CN201910698776 A CN 201910698776A CN 110416129 A CN110416129 A CN 110416129A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
- H01L2223/5444—Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of wafer defect labelling apparatus and wafer defect labeling methods, are marked for the defective locations to wafer to be measured, analyze in order to subsequent defect.The present invention performs etching wafer to be measured by using laser and generates label, has label simply, can permanent advantage.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of wafer defect labelling apparatus and wafer defect mark
Note method.
Background technique
In the wafer production process of large-scale integrated circuit, need in time in each making technology node to existing on wafer
Defect carry out slice analysis, with probe into defect generation mechanism.
The slice analysis of wafer defect is first had to carry out sample preparation using focused ion beam microscope.Currently, using in the industry
In the focused ion beam microscope of sample preparation, there are mainly two types of type is available: one is high-precision focused ion beam microscope,
Secondly being non-fragmentation formula wafer focusing ion cluster microscope.The sample stage of high-precision focused ion beam microscope it is smaller and can not be right
Full wafer wafer is operated, need it is artificial fragmentation is carried out to wafer in advance, this undoubtedly increase operator work difficulty and
Workload.Rather than although fragmentation formula wafer focusing ion cluster microscope can operate full wafer wafer, because resolution ratio compared with
It is low, it generally requires that scanning electron microscope (SEM) is first used to be scanned wafer to find defective locations, and to the defective bit
It sets after carrying out carbonization label, just can carry out sample preparation in non-fragmentation formula wafer focusing ion cluster microscope.
However, carrying out after carbonization label again that sample preparation is lacked there are following in focused ion beam microscope to wafer using SEM
It falls into:
The complexity of difference deposition membrane material carbonization is different, such as silicon nitride material is just not easy to be carbonized；
It shoals if carbonization label is exposed to its trace in air and can subside for a long time, i.e., the wafer after carbonization label needs horse
Upper sample preparation and cannot save for a long time；
It is existing that Carbon deposition easily occurs when sample preparation in entering focused ion beam microscope for the bad deposition membrane material of electric conductivity
As, and then carbonization label is caused to be difficult to differentiate.
Summary of the invention
The purpose of the present invention is to provide a kind of wafer defect labelling apparatus and wafer defect labeling methods, current to solve
It is existing when wafer is marked to be not easy to mark, recession or label is marked to be difficult to the problems such as differentiating.
To achieve the above object, a kind of wafer defect labelling apparatus provided by the invention, comprising:
Main chamber has scanning mark zone；
Tagging system is scanned, is correspondingly arranged and with the scanning mark zone including scanning electron microscope component and laser mark
Remember component；And
First sample stage is movably disposed in main chamber room and is used to carry wafer to be measured,；
Wherein: when first sample stage moves to the scanning mark zone, the scanning electron microscope component is used
Detection is scanned to the wafer to be measured on first sample stage in first, to obtain the defective locations of the wafer to be measured, into
And the laser labelling component is used to emit laser to the defective locations of the wafer to be measured, with the defect to the wafer to be measured
Position performs etching and forms label.
Optionally, the wafer defect labelling apparatus further include:
First closed chamber is movably disposed in main chamber room；
Second closed chamber is movably disposed in main chamber room；And
Second sample stage is movably disposed in main chamber room and for carrying wafer to be measured；
Wherein: first sample stage is set to first closed chamber, and first closed chamber is for driving described the
The same sample platform moves to the scanning mark zone, and when first sample stage moves to the scanning mark zone, described to sweep
Tagging system is retouched for the wafer to be measured on first sample stage being marked through first closed chamber；
Second closed chamber is for moving to the scanning mark zone, so that the scanning tagging system is described second
Cleaning is realized in airtight chamber；
Second sample stage is for moving to the scanning mark zone, so that the scanning electron microscope component is to institute
The wafer to be measured stated on the second sample stage is scanned detection, to obtain the defect shape of the wafer to be measured on second sample stage
Looks.
Optionally, the wafer defect labelling apparatus further include:
Optical microphotograph mirror assembly is correspondingly arranged with the scanning mark zone；
When first sample stage moves to the scanning mark zone, the flying-spot microscope component and the optics are aobvious
Micromirror assemblies are scanned detection to the wafer to be measured on first sample stage jointly；And/or
When second sample stage moves to the scanning mark zone, the scanning electron microscope component and the light
It learns microscope assembly and detection is scanned to the wafer to be measured on second sample stage jointly.
Optionally, the wafer defect labelling apparatus further include:
Third closed chamber is movably disposed in main chamber room；
Wherein: second sample stage is set to the third closed chamber, and the third closed chamber is for driving described the
Two sample stages move to the scanning mark zone, and when second sample stage moves to the scanning mark zone, described to sweep
It retouches electron microscopic mirror assembly and detection is scanned to the wafer to be measured on second sample stage.
Optionally, first closed chamber, second closed chamber and the third closed chamber are liftably set to
In main chamber room.
Optionally, the wafer defect labelling apparatus further include:
Translation stage, is set in main chamber room and for moving horizontally in main chamber room, and described first close
Closed chamber, the second closed chamber and third closed chamber are liftably set on the translation stage.
Optionally, the translation stage is arc panel, and first closed chamber, second closed chamber and the third are closed
Circumferentially-spaced arrangement of the chamber along the translation stage；Or,
The translation stage is rectangular slab, and first closed chamber, second closed chamber and the third closed chamber are along institute
State the side edge direction interval setting of translation stage.
Optionally, the wafer defect labelling apparatus further include:
Pumped vacuum systems is connect with second closed chamber, to vacuumize to second closed chamber to the scanning
Tagging system is cleaned.
Optionally, the scanning tagging system is set on the roof of main chamber room；The top of first closed chamber
It is provided with window to be opened/closed；
When first closed chamber moves to the scanning mark zone, the window is opened, and first closed chamber
A confined space is collectively formed with the roof of main chamber room, and the laser labelling component is used for laser light incident to described closed
In space；
Optionally, the laser labelling component includes: laser, diaphragm, reflecting mirror and focus lamp；The laser is used for
Emit laser, and the laser successively focused to after the diaphragm, reflecting mirror and focus lamp on first sample stage to
Wafer is surveyed, performs etching label with the defective locations to the wafer to be measured.
Optionally, the wafer defect labelling apparatus further include:
Control unit is respectively used to control the first sample stage movement, and the scanning electron microscope component is swept
It retouches detection and the laser labelling component and emits laser to the defective locations of the wafer to be measured.
Optionally, the wafer defect labelling apparatus further include:
Control unit is respectively used to control first closed chamber, second closed chamber and second sample stage
Movement is also used to control the flying-spot microscope component and is scanned detection and the laser labelling component to described to be measured
The defective locations of wafer emit laser.
In addition, to achieve the above object, the present invention provides a kind of wafer defect labeling method, based on foregoing brilliant
Discount vibram outlet falls into labelling apparatus, comprising:
One wafer to be measured is provided；
SEM Scan orientation is carried out to the wafer to be measured, obtains the defective locations of the wafer to be measured；
Emit laser to the defective locations of the wafer to be measured, the defective locations of the wafer to be measured is made to be etched and be formed
Label.
Optionally, further includes:
Wafer to be measured is placed on indoor first sample stage of main chamber；
First sample stage first moves to the indoor scanning mark zone of main chamber, then successively carries out to the wafer to be measured
SEM Scan orientation and laser ablation.
Compared with prior art, wafer defect labelling apparatus of the invention and wafer defect labeling method have following excellent
Point:
The first, wafer defect labelling apparatus provided by the invention include main chamber, the first sample stage and scanning tagging system,
The scanning tagging system includes scanning electron microscope component and laser labelling component；When practical application, wafer to be measured is placed
On first sample stage, and the first sample stage needs to move to the scanning mark zone of main chamber, and then the scanning electron
Microscope assembly first detects after obtaining defective locations the wafer to be measured on the first sample stage, recycles the laser labelling
Component carries out laser ablation to the defective locations of wafer to be measured to form label, and then the label system formed according to etching
Sample is analyzed with the defect to wafer.It does so, convenient for forming label on all kinds of deposition membrane materials, meanwhile, which can
Long-term preservation is without subsiding, in addition, the label will not be beyond recognition due to depositing membrane material itself and Carbon deposition occurs, therefore
The effect of flaw labeling is good, and the process marked is simple and convenient.
The second, above-mentioned wafer defect labelling apparatus in main chamber by being arranged the first closed chamber, the second closed chamber and
Two sample stages can also be individually used for wafer defect so that the wafer defect labelling apparatus can be not only used for the etching label of wafer
Scanning probe improves the utilization rate of wafer defect labelling apparatus, meanwhile, by the segmentation of the first closed chamber and the second closed chamber,
The particle for avoiding etching from generating when marking pollutes the wafer for being individually scanned detection.
Second sample stage is set to by third, above-mentioned wafer defect labelling apparatus by setting third closed chamber
In the third closed chamber, the particle for further avoiding generating when etching label causes dirt to the wafer for being individually scanned detection
Dye.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the wafer defect labelling apparatus of the invention according to provided by an embodiment；
Fig. 2 is the schematic diagram for the laser labelling component that the present invention is provided according to an embodiment；
Fig. 3 is the structural schematic diagram for the first closed chamber that the present invention is provided according to an embodiment；
Fig. 4 is the top view for the wafer defect labelling apparatus that the present invention is provided according to an embodiment, in figure, main chamber room
Roof and scanning tagging system be not shown；
Fig. 5 is the top view of wafer defect labelling apparatus that the present invention provides according to another embodiment, in figure, main chamber
The roof and scanning tagging system of room are not shown.
In figure:
100- main chamber；
200- scans tagging system；
210- scanning electron microscope component；
220- laser labelling component；
221- laser, 222- diaphragm, 223- reflecting mirror, 224- focus lamp；
230- optical microphotograph mirror assembly；
The first sample stage of 300-；
400- translation stage；
The first closed chamber of 500-；
510- first window, the second sealing ring of 520-；
The second closed chamber of 600-；
The second sample stage of 700-；
800- third closed chamber.
Specific embodiment
Core of the invention thought is to provide a kind of wafer defect labelling apparatus, for the defects of wafer to be measured position
It sets and is marked.The wafer defect labelling apparatus includes:
Main chamber has scanning mark zone；
Tagging system is scanned, is correspondingly arranged and with the scanning mark zone including scanning electron microscope component and laser mark
Remember component；And
First sample stage is movably disposed in main chamber room and is used to carry wafer to be measured,；
Wherein: when first sample stage moves to the scanning mark zone, the scanning electron microscope component is used
Detection is scanned to the wafer to be measured on first sample stage in first, to obtain the defective locations of the wafer to be measured, into
And the laser labelling component is used to emit laser to the defective locations of the wafer to be measured, with the defect to the wafer to be measured
Position performs etching and forms label.
By being provided with the scanning tagging system of laser labelling component on wafer defect labelling apparatus, in scanning electron
After microscope is scanned positioning to wafer to be measured, use laser labelling component to perform etching wafer to be measured with formed label,
The label can retain for a long time, and will not be difficult to due to the deposition membrane material of wafer Carbon deposition in subsequent processes point
It distinguishes, while laser ablation can carry out on various deposition membrane materials, so that the process of label is simple and convenient.
To keep the purpose of the present invention, advantages and features clearer, wafer proposed by the present invention is lacked below in conjunction with attached drawing
It falls into labelling apparatus and wafer defect labeling method is described in further detail.It should be noted that attached drawing is all made of very simplification
Form and use non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As used in the specification and the appended claims, singular " one ", " one " and " being somebody's turn to do " include
Plural reference, " multiple " plural form includes two or more objects, in addition in addition non-content explicitly points out.Such as at this
Used in specification and appended, term " or " be usually with include " and/or " meaning and carry out using,
In addition in addition non-content explicitly points out and term " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be solid
Fixed connection, may be a detachable connection, or be integrally connected.It can be mechanical connection, be also possible to be electrically connected.It can be straight
It connects connected, the connection inside two elements or the phase interaction of two elements can also be can be indirectly connected through an intermediary
With relationship.For the ordinary skill in the art, it can understand above-mentioned term in the present invention as the case may be
Concrete meaning.The same or similar appended drawing reference represents the same or similar component in attached drawing.
Fig. 1 show the structural schematic diagram of the wafer defect labelling apparatus of one embodiment of the invention offer.As shown in Figure 1,
The wafer defect labelling apparatus includes: main chamber 100, scanning tagging system 200 and the first sample stage 300；Main chamber room
100 have a scanning mark zone；The scanning tagging system 200 is correspondingly arranged and with the scanning mark zone including scanning electron
Microscope assembly 210 and laser labelling component 220；First sample stage 300 is movably disposed in main chamber room 100
And for carrying wafer (not shown) to be measured.When practical application, first sample stage 300 first moves to the scanning mark
Remember area, then the scanning electron microscope component 210 is scanned detection to the wafer to be measured on the first sample stage 300, with
The defective locations of the wafer to be measured are obtained, and then the laser labelling component 220 is sent out to the defective locations of the wafer to be measured again
Laser is penetrated, forms label to perform etching to the defective locations.Being formed by label by laser ablation can protect for a long time
It deposits without subsiding, and be formed by label not distinguishing due to depositing membrane material itself on wafer and Carbon deposition occurs
Recognize, improves the validity of wafer defect label, and the process of flaw labeling is simple and convenient, it is high-efficient.
In the present embodiment, first sample stage 300 can move itself in main chamber 100, can also pass through external machine
Structure drives its movement, such as the wafer defect labelling apparatus further includes the translation stage 400 being set in main chamber room 100,
And first sample stage 300 is set on translation stage 400, and the translation stage 400 can move in main chamber room 100,
To drive first sample stage 300 to move in main chamber room 100.
Further, scanning label is that 200 may also include optical microphotograph mirror assembly 230, and the optical microscopy
Component 230 constitutes the optical navigation system of the wafer defect labelling apparatus with the translation stage 400 together.In fact, the light
Learning navigation system can composition with the optical navigation system of existing commercially available all kinds of scanning electron microscope, the complete phase of control mode
Together, i.e., optical navigation system is constituted for those skilled in the art by the optical microphotograph mirror assembly 230 and the translation stage 400
For be common knowledge.
Next, illustrating the user of the wafer defect labelling apparatus by taking the defect to wafer to be measured is marked as an example
Method.
Firstly, wafer to be measured is placed on first sample stage 300；
Later, optical detection is carried out to wafer to be measured using the optical navigation system, obtains the whole of crystal column surface to be measured
Body navigation picture；
Then, it is based on the overall navigation figure, wafer to be measured is put using the scanning electron microscope component 210
It exposes thoroughly, to obtain the defective locations of wafer to be measured；
Finally, the laser labelling component 220 emits laser to the wafer to be measured under the action of optical navigation system
Defective locations so that the deposition film at defective locations is etched and forms label.
It should be noted that how to carry out optical detection using optical navigation system and obtain the overall navigation of crystal column surface
Figure, and the defective locations of wafer to be measured how are found using scanning electron microscope component 210, then in same optical guidance system
It is the common knowledge of this field to the defective locations by the laser aiming, thus details are not described herein again under the action of system.
As shown in Fig. 2, the laser labelling component 220 may include laser 221, diaphragm 222, reflective mirror 223 and focus
Mirror 224.When practical application, the laser 221 emits laser, and the laser injects institute after the diaphragm 222 adjusts light beam
Reflective mirror 223 is stated, to change the propagation path of laser, the laser by reflection focuses and final through the focus lamp 224
Wafer to be measured described in directive, to be performed etching to the wafer to be measured.The type of laser is not done sternly in the present embodiment
Lattice limitation, can be specifically chosen according to the deposition membrane material of wafer to be measured.
Further, the wafer defect labelling apparatus further includes control unit, for controlling first sample stage 300
Movement, for example away from or close to the scanning mark zone, and described control unit is also used to control the scanning tagging system
200 work, i.e. control scanning electron microscope component 210 are scanned detection to the wafer to be measured on the first sample stage 300,
It is also used to control laser labelling component 220 and emits laser to the defective locations of the wafer to be measured.In the present embodiment, the control
The existing control mechanism such as programmable single-chip microcontroller, PLC controller can be selected in unit, and specifically controlling program can be by this field skill
Art personnel are configured according to actual needs.
According to statistics, in the actual production process of wafer, the wafer accounting for needing to do the slice analysis of defect is less than
10%, the wafer of 90% or more residue only needs to do the morphology analysis of defect.Moreover, wafer defect label provided in this embodiment
Device is equipped with scanning electron microscope component 210, and therefore, for the utilization rate for improving equipment, the wafer defect labelling apparatus is past
Contact is individually used for doing wafer defect morphology analysis.But because the particle generated when performing etching label to wafer can be to master
Chamber 100 pollutes, thus influence defect morphology analysis as a result, and all to master when needing to carry out defect morphology analysis every time
Chamber 100 clean and increase the maintenance cost of equipment, and it is low to also result in working efficiency.In this regard, please continue to refer to figure
1, the wafer defect labelling apparatus further includes the first closed chamber 500, the second closed chamber 600 and the second sample stage 700, and described
First closed chamber 500, the second closed chamber 600 and the second sample stage 700 are liftably set on the translation stage 400.
Specifically, first closed chamber 500 is movably disposed in main chamber room 100, first sample
Platform 200 is set in first closed chamber 500, and drives first sample stage 200 to transport by first closed chamber 500
It moves to the scanning mark zone.When the first closed chamber 500 moves to scanning mark zone, the scanning tagging system 200 be can pass through
First closed chamber 500 carries out flaw labeling to the wafer to be measured on the first sample stage 300, and laser ablation generates during this
Particulate matter a part be attached to scanning tagging system 200 on, a part stays in the first closed chamber 500.In the present embodiment, when
First closed chamber 500 moves to scanning mark zone, the mirror of the camera lens of scanning electron microscope component 210, laser labelling component 220
The camera lens of head and the optical microphotograph mirror assembly 230 is inserted into the first closed chamber 500.In other embodiments, the scanning electricity
The camera lens of the camera lens of sub- microscope assembly 210 and the optical microphotograph mirror assembly 230 can also be not inserted into first closed chamber 500
In.
Second closed chamber 600 is movably disposed in main chamber room 100, and second closed chamber 600 is also used
In moving to the scanning mark zone, and camera lens, the laser labelling component for being provide with the scanning electron microscope 210
The camera lens of 220 camera lens and the optical microscopy 230 is realized clearly to scan tagging system 200 in the second airtight chamber
It is clean, thus the particulate matter generated during removing laser ablation, to avoid follow up scan analysis is influenced.
Second sample stage 700 is movably disposed in main chamber room 100 and for carrying a wafer to be measured, and
Second sample stage 700 is also used for moving to scanning mark zone, so that scanning electron microscope component 210 is to the second sample stage 700
On wafer to be measured be scanned analysis, to obtain the defect state of the wafer to be measured on second sample stage.
So, the wafer defect labelling apparatus can be used for defect morphology analysis and the flaw labeling processing of wafer,
And it can avoid adversely affecting defect morphology analysis because of flaw labeling processing bring particulate matter.
In detail, when wafer to be measured with the first closed chamber 500 the scanning mark zone is moved to and in the first closed chamber 500
Work is inside marked, this in the process can pollute scanning tagging system 200；Then, the first closed chamber 500 is far from described
Scan mark zone；Then, second closed chamber 600 moves to the scanning mark zone to seal the scanning tagging system
200, and clean scanning tagging system 200 in the second closed chamber 600, the scanning tagging system is attached to removal
Particulate matter on 200；Then, second closed chamber 600 is far from the scanning mark zone；Finally, second sample stage 700
Another wafer movement to be measured is carried to the scanning mark zone and utilizes optical microphotograph mirror assembly 230 and flying-spot microscope component
210 carry out the morphology analysis of defect.That is, working in the present embodiment switching to the second sample stage 700 by the first closed chamber 500
Before, first the scanning tagging system 200 is cleaned by the second closed chamber 600, remains on when removing markers work and sweeps
The particle on tagging system 200 is retouched, to reduce the adverse effect to the defect morphology analysis of wafer.
It will be appreciated that can be completed by vacuumizing for the cleaning for scanning tagging system 200.That is, the wafer is swept
Retouching labelling apparatus further includes pumped vacuum systems, is connect with second closed chamber 600, to vacuumize to second closed chamber
The scanning tagging system is cleaned.Optionally, the pumped vacuum systems includes that vacuum line and vacuum pump (do not show in figure
Out), vacuum line is connect with the second closed chamber 600.When second closed chamber 600 moves to the scanning mark zone, and
The camera lens and the optical microphotograph mirror assembly of the camera lens of the scanning electron microscope component 210, the laser labelling component 220
When 230 camera lens is located in second closed chamber 600, the vacuum pump is opened to vacuumize to second closed chamber 600,
To be cleaned to the scanning tagging system 200.
In further improving, the wafer defect labelling apparatus further includes third closed chamber 800, and the third is closed
Chamber 800 is set on the translation stage 400 and for accommodating second sample stage 700, in this way, being carried on second sample
Wafer to be measured in sample platform 700 can carry out the morphology analysis of defect in the third closed chamber 700, in this way, can further drop
The influence that residual particles work to scanning probe when low markers work.
That is, in the present embodiment, by the way that mutually independent first closed chamber 500, the second closed chamber are arranged in main chamber 100
600 and third closed chamber 800, and the first closed chamber 500 is served only for scanning markers work, third closed chamber is served only for the shape of defect
Looks analyze work, while before being worked by the first closed chamber 500 switching third closed chamber 800, first by the second closed chamber 600 to sweeping
It retouches tagging system 200 to be cleaned, so that the particulate matter for avoiding markers work from generating interferes scanning work.
In the present embodiment, the scanning tagging system 200 is fixed on the roof of main chamber room 100, wherein
The focusing of the camera lens of the optical microphotograph mirror assembly 230, the camera lens of scanning electron microscope 210 and laser labelling component 220
Mirror 224 is respectively positioned in main chamber room 100.Preferably, first closed chamber 500 can in the roof of main chamber room 100
Side forms first confined space, and second closed chamber 600 can form institute with the roof medial surface of main chamber room 100
The second confined space is stated, it is closed that the third closed chamber 700 can form the third with the roof medial surface of main chamber room 100
Space.For this purpose, first closed chamber 500, the second closed chamber 600 and third closed chamber 700 be liftably set to it is described
On translation stage 400, that is to say, that the translation stage 400 can be moved horizontally only in main chamber 100, pass through 400 band of translation stage
After dynamic relevant work chamber moves to the lower section of scanning tagging system 200, which rises to carry out phase after forming airtight chamber
It should work.Here, the mechanism for realizing first closed chamber 500, the second closed chamber 600 and third closed chamber 700 can be
Existing all kinds of elevating mechanisms, such as electric putter etc..
More specifically, it is provided on the roof medial surface of main chamber room 100 around the scanning tagging system 200
First sealing ring (not shown).The structure of first closed chamber 500 is as shown in figure 3, in first closed chamber 500
It is provided with first window 510 to be opened/closed on roof, and is provided on the roof lateral surface of the first closed chamber 500 around described the
One window 510 and the second sealing ring 520 matched with first sealing ring.When the first window 510 open and it is described
When second sealing ring 520 is with the first sealing ring squeezed tight, the top of first closed chamber 500 and main chamber room 100
Wall medial surface forms first confined space.Incorporated by reference to Fig. 1, the camera lens of the optical microphotograph mirror assembly 230, scanning are electric at this time
The camera lens of sub- microscope 210 and the focus lamp 224 of laser labelling component 220 can be respectively positioned on the described first closed confined space
It is interior, so as to be scanned label to the wafer to be measured in first confined space.It should be understood that first window 510 here can
Using it is existing it is all kinds of can automatic open close automatic window.
The structure of second closed chamber 500 is similar with the structure of the first closed chamber.Specifically, second closed chamber
500 roof is equipped with the second window to be opened/closed, and is provided on the lateral surface of the roof of second closed chamber 500 circular
Second window and the third sealing ring matched with first sealing ring.When second window unlatching and the third
When sealing ring and the first sealing ring squeezed tight, second closed chamber 500 and the inner roof wall of main chamber room 100 are formed
Second confined space, at this time the camera lens of the optical microphotograph mirror assembly 230, the camera lens of scanning electron microscope 210 and
The focus lamp 224 of laser labelling component 220 can be respectively positioned in second airtight chamber, right so as to open the vacuum pump
The scanning tagging system 200 is cleaned.
The structure of the third closed chamber 800 is equally similar with first closed chamber 500.That is, the third is closed
The roof of chamber 800 is equipped with third window to be opened/closed, and the lateral surface of the roof of the third closed chamber 800 is equipped with and surround
The third window and the 4th sealing ring matched with first sealing ring.When third window unlatching and the described 4th
When sealing ring and the first sealing ring squeezed tight, the third closed chamber 800 and the inner roof wall of main chamber room 100 are formed
The third confined space, at this point, the camera lens of the camera lens of the optical microphotograph mirror assembly 230, scanning electron microscope 210 and
The focus lamp 224 of laser labelling component 220 can be respectively positioned in the third confined space, so that it is closed to be located at the third
The scanned detection of wafer to be measured in chamber 800.
That is, selecting suitable working chamber to carry out work according to actual needs the wafer defect labelling apparatus
Make.In the whole process, the horizontal balance of the translation stage 400, the vertical of working chamber act and scan tagging system 200
Movement can be manipulated by described control unit.Here, the horizontal movement of translation stage 400 can be driven by a servo motor.
Still further, first closed chamber 500, second is closed as shown in figure 4, the translation stage 400 is arc panel
Chamber 600 and third closed chamber 800 along the translation stage 400 circumferentially-spaced arrangement, in this way, the translation stage 400 do it is reciprocal
Rotary motion can facilitate the switching of the first closed chamber 500 and third closed chamber 800.Alternatively, in another embodiment, such as Fig. 5 institute
Show, the translation stage 400 can also be rectangular slab, at this point, first closed chamber 500, the second closed chamber 600 and third closed chamber
800 can be arranged along the side edge direction interval of the translation stage 400.
In addition it is also necessary to explanation, the cleaning when carrying out the morphology analysis of wafer defect for third closed chamber 800
Spend it is more demanding, therefore, when switching to third closed chamber 800 by the first closed chamber 500 each time, require to scanning label system
System 200 is cleaned.And when carrying out the label of wafer defect, it is relatively low for the cleannes requirement of the first closed chamber 500, because
This, just once cleans scanning tagging system 200 without markers work of every completion, in fact, the first closed chamber 500
Cleaning can be carried out together with the cleaning of main chamber 100, which can pass through another pumping being connected to main chamber room 100
Vacuum system is completed, and when cleaning described in the first window of the first closed chamber 500 should be at open state.
Further, the present invention also provides a kind of wafer defect labeling methods, are marked based on wafer defect above-mentioned
Device, the wafer defect labeling method specifically include:
Step S1: a wafer to be measured is provided；
Step S2: SEM Scan orientation is carried out to the wafer to be measured, obtains the defective locations of the wafer to be measured；
Step S3: emit laser to the defective locations of the wafer to be measured, carve the defective locations of the wafer to be measured
Erosion is to form label.
That is, the concrete operations for being scanned positioning to the wafer to be measured are: a wafer to be measured being placed in described first
In the same sample platform；Then first sample stage moves to the indoor scanning mark zone of main chamber；Pass through optical guidance later
System carries out optical detection to the wafer to be measured to obtain the overall navigation figure of the wafer to be measured；It is based on the overall navigation again
Figure amplifies scanning to the wafer to be measured, and finds the defective locations of wafer to be measured；Finally in same optical navigation system
Under the action of, laser is emitted to the defect using a laser, which performs etching the defective locations of wafer to be measured, from
And form the label.
Although present disclosure is as above, however, it is not limited to this.Those skilled in the art can carry out the present invention each
Kind modification and variation is without departing from the spirit and scope of the present invention.In this way, if these modifications and changes of the present invention belongs to this
Within the scope of invention claim and its equivalent technologies, then the present invention is also intended to include these modifications and variations.
Claims (14)
1. a kind of wafer defect labelling apparatus characterized by comprising
Main chamber has scanning mark zone；
Tagging system is scanned, is correspondingly arranged and with the scanning mark zone including scanning electron microscope component and laser labelling group
Part；And
First sample stage is movably disposed in main chamber room and for carrying wafer to be measured；
Wherein: when first sample stage moves to the scanning mark zone, the scanning electron microscope component is for first
Detection is scanned to the wafer to be measured on first sample stage, to obtain the defective locations of the wafer to be measured, Jin Ersuo
Laser labelling component is stated for emitting laser to the defective locations of the wafer to be measured, with the defective locations to the wafer to be measured
It performs etching and forms label.
2. wafer defect labelling apparatus according to claim 1, which is characterized in that the wafer defect labelling apparatus also wraps
It includes:
First closed chamber is movably disposed in main chamber room；
Second closed chamber is movably disposed in main chamber room；And
Second sample stage is movably disposed in main chamber room and for carrying wafer to be measured；
Wherein: first sample stage is set to first closed chamber, and first closed chamber is for driving first sample
Sample platform moves to the scanning mark zone, and when first sample stage moves to the scanning mark zone, the scanning mark
Note system is used to that the wafer to be measured on first sample stage to be marked through first closed chamber；
Second closed chamber is for moving to the scanning mark zone, so that the scanning tagging system is closed described second
Cleaning is realized in chamber；
Second sample stage is for moving to the scanning mark zone, so that the scanning electron microscope component is to described the
Wafer to be measured on two sample stages is scanned detection, to obtain the defect pattern of the wafer to be measured on second sample stage.
3. wafer defect labelling apparatus according to claim 2, which is characterized in that the wafer defect labelling apparatus also wraps
It includes:
Optical microphotograph mirror assembly is correspondingly arranged with the scanning mark zone；
When first sample stage moves to the scanning mark zone, the flying-spot microscope component and the optical microscopy
Component is scanned detection to the wafer to be measured on first sample stage jointly；And/or
When second sample stage moves to the scanning mark zone, the scanning electron microscope component and the optics are aobvious
Micromirror assemblies are scanned detection to the wafer to be measured on second sample stage jointly.
4. wafer defect labelling apparatus according to claim 2, which is characterized in that the wafer defect labelling apparatus also wraps
It includes:
Third closed chamber is movably disposed in main chamber room；
Wherein: second sample stage is set to the third closed chamber, and the third closed chamber is for driving second sample
Sample platform moves to the scanning mark zone, and when second sample stage moves to the scanning mark zone, the scanning electricity
Sub- microscope assembly is scanned detection to the wafer to be measured on second sample stage.
5. wafer defect labelling apparatus according to claim 4, which is characterized in that first closed chamber, described second
Closed chamber and the third closed chamber are liftably set in main chamber room.
6. wafer defect labelling apparatus according to claim 5, which is characterized in that the wafer defect labelling apparatus also wraps
It includes:
Translation stage is set in main chamber room and is used to move horizontally in main chamber room, and first closed chamber,
Second closed chamber and third closed chamber are liftably set on the translation stage.
7. wafer defect labelling apparatus according to claim 6, which is characterized in that the translation stage is arc panel, described
The circumferentially-spaced arrangement of first closed chamber, second closed chamber and the third closed chamber along the translation stage；Or,
The translation stage is rectangular slab, and first closed chamber, second closed chamber and the third closed chamber are along described flat
The side edge direction interval of moving stage is arranged.
8. wafer defect labelling apparatus according to claim 2, which is characterized in that the wafer defect labelling apparatus also wraps
It includes:
Pumped vacuum systems is connect with second closed chamber, is marked with vacuumizing to second closed chamber to the scanning
System is cleaned.
9. wafer defect labelling apparatus according to claim 2, which is characterized in that the scanning tagging system is set to institute
It states on the roof of main chamber；Window to be opened/closed is provided at the top of first closed chamber；
When first closed chamber moves to the scanning mark zone, the window is opened, and first closed chamber and institute
The roof for stating main chamber collectively forms a confined space, and the laser labelling component is used for laser light incident to the confined space
It is interior.
10. wafer defect labelling apparatus according to claim 1 to 9, which is characterized in that the laser labelling
Component includes: laser, diaphragm, reflecting mirror and focus lamp；The laser is for emitting laser, and the laser is successively through institute
The wafer to be measured on first sample stage is focused to after stating diaphragm, reflecting mirror and focus lamp, to lack to the wafer to be measured
Sunken position performs etching label.
11. wafer defect labelling apparatus according to claim 1 to 9, which is characterized in that the wafer defect
Labelling apparatus further include:
Control unit is respectively used to control the first sample stage movement, and the scanning electron microscope component is scanned spy
Survey and the laser labelling component to the defective locations of the wafer to be measured emit laser.
12. the wafer defect labelling apparatus according to any one of claim 2-9, which is characterized in that the wafer defect
Labelling apparatus further include:
Control unit is respectively used to control first closed chamber, second closed chamber and second sample stage movement,
It is also used to control the flying-spot microscope component and is scanned detection and the laser labelling component to the wafer to be measured
Defective locations emit laser.
13. a kind of wafer defect labeling method is based on wafer defect labelling apparatus of any of claims 1-12,
It is characterized in that, comprising:
One wafer to be measured is provided；
SEM Scan orientation is carried out to the wafer to be measured, obtains the defective locations of the wafer to be measured；
Emit laser to the defective locations of the wafer to be measured, the defective locations of the wafer to be measured is made to be etched and form mark
Note.
14. wafer defect labeling method according to claim 13, which is characterized in that further include:
Wafer to be measured is placed on indoor first sample stage of main chamber；
First sample stage first moves to the indoor scanning mark zone of main chamber, then successively carries out SEM to the wafer to be measured
Scan orientation and laser ablation.
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| CN201910698776.8A CN110416129B (en) | 2019-07-31 | 2019-07-31 | Wafer defect marking device and wafer defect marking method |
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| CN201910698776.8A CN110416129B (en) | 2019-07-31 | 2019-07-31 | Wafer defect marking device and wafer defect marking method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908903A (en) * | 2021-02-19 | 2021-06-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Marking device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000180391A (en) * | 1998-12-11 | 2000-06-30 | Sony Corp | Electron microscope and flaw shape confirming method |
| US20060138323A1 (en) * | 2004-12-23 | 2006-06-29 | Ching-Pin Chang | Method of Applying Micro-Protection in Defect Analysis |
-
2019
- 2019-07-31 CN CN201910698776.8A patent/CN110416129B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000180391A (en) * | 1998-12-11 | 2000-06-30 | Sony Corp | Electron microscope and flaw shape confirming method |
| US20060138323A1 (en) * | 2004-12-23 | 2006-06-29 | Ching-Pin Chang | Method of Applying Micro-Protection in Defect Analysis |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908903A (en) * | 2021-02-19 | 2021-06-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Marking device |
| CN112908903B (en) * | 2021-02-19 | 2024-04-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Marking device |
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| Publication number | Publication date |
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| CN110416129B (en) | 2021-07-09 |
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