CN110416071A - A kind of silica-base film film plating process of crystal silicon solar energy battery - Google Patents
A kind of silica-base film film plating process of crystal silicon solar energy battery Download PDFInfo
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- CN110416071A CN110416071A CN201910705525.8A CN201910705525A CN110416071A CN 110416071 A CN110416071 A CN 110416071A CN 201910705525 A CN201910705525 A CN 201910705525A CN 110416071 A CN110416071 A CN 110416071A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000013078 crystal Substances 0.000 title claims abstract description 23
- 238000007747 plating Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000010926 purge Methods 0.000 claims abstract description 35
- 239000011261 inert gas Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims description 15
- 229910007245 Si2Cl6 Inorganic materials 0.000 claims description 2
- 229910007258 Si2H4 Inorganic materials 0.000 claims description 2
- 229910007264 Si2H6 Inorganic materials 0.000 claims description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 2
- 229910003826 SiH3Cl Inorganic materials 0.000 claims description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000746 purification Methods 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 239000008246 gaseous mixture Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of silica-base film film plating process of crystal silicon solar energy battery, belong to crystal silicon solar energy battery field, specifically include: substrate being placed in PEALD reaction chamber, pressure is adjusted to 30-5000Pa, and temperature is stablized at 50-500 DEG C；Silicon source plated film 0.5-10s is passed through into reaction chamber；It is passed through inert gas purge 1-20s；It is passed through plasma gas plated film 1-20s, the power 50-2000W of plasma；Then inert gas or N again2Purification purging.This method realizes that thickness uniformly, without the silica-base film and coating film thickness around plating accurately controls.
Description
Technical field
The invention belongs to crystal silicon solar energy battery field, in particular to a kind of silica-base film of crystal silicon solar energy battery
Film plating process.
Background technique
In the high-efficiency battery of a new generation, carrier selects passivated electrodes structure, such as tunnel oxide passivated electrodes
(tunnel oxide passivating contact, TOPCon) battery and silicon heterogenous
(siliconheterojunction, SHJ or HJT) battery is required using silica-base film as functional layer.Currently, laboratory
In often using low-pressure chemical vapor deposition LPCVD or depositing silica-base film using the scheme of multi-electrode PECVD.But
LPCVD sedimentation, which has high temperature (600 degree or more) technique for using, to have injury to silicon substrate, as inside activation impurity from
And Si wafer quality is reduced, and can all deposit silica-base film on the two sides of silicon wafer, so that being needed in the side for not needing silica-base film
Increase a technique come the problem of removing silica-base film.For board-like PECVD other than high equipment cost, not convenient for safeguarding, silicon substrate is thin
The difficulty of the realization of the area uniformity of film thickness is also very big.Compared to the board-like PECVD technique of chain type, tubular type PECVD's is excellent
Point is that equipment cost is cheap, and maintenance and repair are simple and convenient, therefore can reduce the preparation cost of solar battery.In addition
Silica-base film can be also prepared in batches, but the unevenness of the silica-base film prepared is very high, and has around plating, i.e., non-
Coated surface grown certain thickness film.
Atomic layer deposition (ALD) be several (usually two kinds) vaporous precursors plated films are alternately passed through reactor and
Chemical absorption of surface occurs in deposition substrate and reacts a kind of method for forming film.First the first precursors is passed into
Substrate material surface is simultaneously maintained at surface by chemisorption；Then second of presoma is passed through reactor, and be adsorbed in
First presoma of substrate material surface reacts.Displacement can occur between two presomas to react and generate corresponding by-product
Object, until first presoma on surface completely consumes, reaction can be automatically stopped and be formed the atomic layer of needs, can theoretically do
A single layer covering is formed on surface to one cycle, can accurately control deposited film thickness by regulating and controlling cycle-index.Root
It is that one kind can control the technique of substrate surface reaction in atomic level, thus have film forming thickness equal according to the visible ALD of its principle
It is even controllable, it is influenced smaller (conformality is good) by substrate surface shape, the advantages that quality of forming film is high non-porous.It is very easy to carry out simultaneously
Doping and surface modification, can be with depositing multi-component nano thin-layer and oxide skin(coating), and growth can (room temperature arrives film in low temperature
500C) under carry out.ALD can be divided into hot ALD (Thermal ALD) and plasma enhancing ALD (Plasma enhanced ALD,
PEALD) two kinds.PEALD is a kind of ALD of energy enhancing auxiliary, uses the plasma of high activity as reactant, can make
Reduce reaction temperature；Or make originally that nonreactive reactant reacts at hot ALD.It is set with chemical vapor deposition (CVD)
Standby system is compared, and ALD system is relatively easy.It generally includes source film coated type transport system, reaction chamber, pump vacuum system, control
Four part of system.PEALD replaces common reactant due to introducing plasma in growth, it is therefore desirable to increase plasma
Generating device.According to the number of silicon wafer per treatment, monolithic and two kinds of batch device can be divided into.Due to ALD/PEALD at
Film quality is high, and film thickness controllable precise is also gradually introduced in manufacture of solar cells recently the features such as can adulterating.
Summary of the invention
In order to solve the above problem, the present invention provides a kind of silica-base film film plating process of crystal silicon solar energy battery, real
Existing thickness uniformly, without the silica-base film and coating film thickness around plating accurately controls, and is the new and effective batteries such as TOPCon and HJT
Extensive industrialized development is paved the way.It is of the invention the specific scheme is that
A kind of silica-base film film plating process of crystal silicon solar energy battery, includes the following steps:
(1) substrate is placed in PEALD reaction chamber, pressure is adjusted to 30-5000Pa, it is preferred that pressure 200-
2000Pa, temperature are stablized at 50-500 DEG C；
(2) silicon source, flow 50-2000sccm, plated film time 0.5-10s, it is preferred that plated film are passed through into reaction chamber
Time is 1-3s；
(3) it is passed through inert gas, flow 50-5000sccm purges 1-20s, it is preferred that gas flow 400-
2000sccm, purging duration are 3-5s；
(4) it is passed through the plasma gas that flow is 50-5000sccm, plated film time 1-20s, plasma is penetrated
Frequency is 13.56MHz, power 50-2000W, it is preferred that is passed through the plasma gas that flow is 500-2000sccm, plated film time
For 3-5s, the radio frequency of plasma is 13.56MHz, power 50-1000W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 1-8s, it is preferred that when purging continues
Between be 2-6s；
(6) circulation step (2) arrives (5), successively grows, until reaching targeted number.
The silicon source is SiH4、Si2H6、Si2Cl6、Si2H4Cl2、SiHCl3、SiH2Cl2、SiH3Cl、SiH(NH2)3、
TSA、HMDS、SiH(CH3)3Any one of.
The inert gas is any one of Ar, He.
The plasma gas is H2Plasma gas is impurity gas and H2Mixed gas.I.e. in coating process
It is middle to replace H using impurity gas2, replace with silicon source and be passed through, determine doping concentration by adjusting the ratio of mixed gas.
Further, the impurity gas and H2Mixed proportion be 1:10~100.
Further, the impurity gas is PH3、B2H6、B(CH3)3、B(C2H5)3That plants is any.
The mixed gas is PH3And H2Mixed gas when, obtained silica-base film is N-type silica-base film.
The mixed gas is B2H6And H2Mixed gas when, obtained silica-base film is P-type silicon base film.
The composition that amorphous silicon membrane is controlled by temperature, when reaction temperature is amorphous silicon, reaction temperature lower than 300 DEG C
It is polysilicon greater than 300 DEG C.
Further, in a kind of silica-base film film plating process of above-described crystal silicon solar energy battery, the step
It suddenly is H in odd-times circulation in the plasma gas cyclic process in (4)2Plasma gas, even circulation in for doping
Gas and H2Mixed gas.
I.e. impurity gas prepares the preparation method of amorphous silicon membrane and both directly silicon source can replace with gaseous mixture and be passed through
Realize doping, it can also first silicon source and H2Alternating is passed through, and then silicon source replaces with gaseous mixture and is passed through, finally silicon source and H again2Alternately
It is passed through to form sandwich.
Preparation for doped amorphous silicon film can select corresponding doping gas according to doping type (p-type or N-type)
Body (such as PH3、B2H6、B(CH3)3、B(C2H5) 3 etc.) mixed with hydrogen,
The invention has the benefit that
(1) PEALD is due to its self-limiting growth feature, and primary plated film range can reach 0.036-0.150nm, than existing
The plated film of technology is thinner, accurately can control film thickness by the plated film number of cycles of deposition, and film quality is equal
Even property is more preferable.
(2) by introducing impurity gas, p-type or n-type doping easily can be carried out to the amorphous silicon of preparation, compared to existing
In technology, by way of either physically or chemically impurity gas after plated film, the present invention utilizes PEALD and technological parameter control
System, directly by impurity gas and H2It directly mixes, is disposably passed through, is directly doped in coating process, operating process is more
It is convenient.
Detailed description of the invention
Fig. 1 is the basic procedure schematic diagram that the present invention carries out plated film using tubular type PEALD used.
The step schematic diagram of one circulation when Fig. 2 is plated film of the present invention.
Carrier shares 8 stations (A, B, C, D, E, F, G, H) from airintake direction to exhaust outlet, and each station can at most be put
26 × 2 cell pieces are set, so single process at most places 416.
Note: 1 is ventilation pipe；2 control valves；3 first gas source bottles；4 second gas source bottles；5 inert gas channels；6 reaction chambers；
7 carriers；8 shower plates；9 control structures；10 exhaust outlets；11 plasma power supplies；12 plasma electrode plates.
Specific embodiment
A specific embodiment of the invention is further described with reference to the accompanying drawing.It should be noted that right
It is used to help understand the present invention in the explanation of these embodiments, but and does not constitute a limitation of the invention.
As shown in Figure 1, the device that the present invention uses includes PEALD reaction chamber 6, have in reaction chamber 6 silicon substrate slide glass 7, with
And plasma producing apparatus 8 occurs, there is exhaust outlet 10 in one end of reaction chamber 6, and adjusts the control machine of reaction chamber internal environment
Structure 9, the other side of reaction chamber 6 have gas handling system, and gas handling system includes the first gas handling system, the second gas handling system and indifferent gas
Body gas handling system, wherein gas handling system ventilation pipe 1 and control valve 2.Plasma gas is inputted into the first gas by ventilation pipe 1
Silicon source is inputted the second gas source bottle 4 by source bottle 3, and inert gas is passed through reaction chamber 6 by the direction of ventilation pipe 5.Specific circulation
As shown in Fig. 2, being first passed through silicon source on silicon substrate, (gaseous state silicon source is passed directly into process, and liquid silicon source passes through inert carrier gas (such as
Ar, He) bring into), it is then passed through inert gas (such as PurgeAr) purging, then be passed through plasma gas (such as Plasma) reaction, after
Inert gas (such as PurgeAr) is passed through again to be purged.Place 26 in each station, totally 208 progress technique, after take
A, each 8 of tri- stations of D, H pass through full spectral laser ellipsometer, 5 points of every survey, unevenness=(maximum thickness-thickness
Spend minimum value)/2 × thickness piece arithmetic internal average value.Since the rich silicon chip back side that is plated to will lead to the sample back side there are obvious colors
Difference, the experimental results showed that, the back appearance of the coated surface of all silicon wafers do not have it is any around plating generate, with ellipsometer test the back side
Film is not tested.
Plated film unevenness level of the existing plate PECVD device in producing line is 3%~15%.The present invention utilizes tubular type
PEALD carries out the batch plated film of silicon wafer, and wherein unevenness is 0.15~5.34% in silicon wafer diaphragm, not than the prior art
Uniformity is lower, plated film excellent in uniform, and not around plating phenomenon.In addition in plated film, it can be doped, eliminate simultaneously
Subsequent doping process and equipment, have saved manufacturing cost.
Specific operation is as follows:
Embodiment 1
(1) silicon substrate of 208 158.75mm × 158.75mm is placed on the carrier 7 of PEALD reaction chamber, pressure adjustment
For 30Pa, temperature is stablized at 50 DEG C；
(2) SiH is passed through into reaction chamber 64Silicon source, flow 50sccm, burst length 10s；
(3) it is passed through inert gas Ar, flow 50sccm, purges 1s；
(4) it is passed through the H that flow is 50sccm2The radio frequency of plasma gas, burst length 20s, plasma is
13.56MHz power 50W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 1s；
(6) circulation step (2) arrives (5), and control loop number is 600, successively grows.
It by full spectral laser ellipsometer, measures that amorphous si film thickness results are as shown in table 1, obtains the thickness of film about
For 21.35nm.
Embodiment 2
(1) silicon substrate of 158.75mm × 158.75mm is placed in PEALD reaction chamber 6, pressure is adjusted to 5000Pa, temperature
Degree is stablized at 500 DEG C；
(2) Si is passed through into reaction chamber 62Cl6Silicon source, carrier gas Ar flow are 2000sccm, burst length 0.5s；
(3) it is passed through inert gas He, flow 5000sccm, purges 20s；
(4) it is passed through the H that flow is 5000sccm2The radio frequency of plasma gas, burst length 1s, plasma is
13.56MHz power 1000W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 8s；
(6) circulation step (2) arrives (5), and control loop number is 500, successively grows.
By full spectral laser ellipsometer, obtaining the coating film thickness of polysilicon, the results are shown in Table 2, obtains the thickness of film about
For 42.19nm.
Embodiment 3
(1) silicon substrate of 158.75mm × 158.75mm is placed in PEALD reaction chamber 6, pressure is adjusted to 150Pa, temperature
Degree is stablized at 250 DEG C；
(2) SiH is passed through into reaction chamber 64Silicon source, flow 500sccm, burst length 0.5s；
(3) it is passed through inert gas Ar, flow 2000sccm, purges 1s；
(4) it is passed through the plasma gas that flow is 1000sccm, the plasma gas is H2With B2H6Mixed gas
Body, H2And B2H6Volume ratio be 10, burst length 1s, the radio frequency of plasma is 13.56MHz, power 100W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2s；
(6) circulation step (2) arrives (5), and control loop number is 1200.
By full spectral laser ellipsometer, it is as shown in table 3 to obtain the amorphous crystal silicon thickness results of p-type, obtains the thickness of film
About 102.26nm.It measures and introduces impurity gas B2H6Afterwards, the resistance of the silicon substrate after the plated film measured is 17 Ω.
Embodiment 4
(1) silicon substrate of 158.75mm × 158.75mm is placed in PEALD reaction chamber, pressure is adjusted to 210Pa, temperature
Stablize at 250 DEG C；
(2) SiH is passed through into reaction chamber4Silicon source, flow 1000sccm, burst length 0.5s；
(3) it is passed through inert gas Ar, flow 400sccm, purges 3s；
(4) it is passed through the plasma gas that flow is 2000sccm, the plasma gas is H2And B2H6Gaseous mixture
Body, wherein H2And B2H6Ratio be 100, burst length 5s, the radio frequency of plasma is 13.56MHz, power 100W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2s；
(6) circulation step (2) arrives (5), and control loop number is 1200, successively grows.
By full spectral laser ellipsometer, the amorphous crystal silicon of p-type with a thickness of 136.5nm is obtained.Measure introducing doping gas
Body B2H6Afterwards, the square resistance measured is 20 Ω.
Embodiment 5
(1) silicon substrate of 158.75mm × 158.75mm is placed in PEALD reaction chamber, pressure is adjusted to 1500Pa, temperature
Degree is stablized at 400 DEG C；
(2) SiH is passed through into reaction chamber4Silicon source, flow 1000sccm, burst length 2s；
(3) it is passed through inert gas He, flow 1000sccm, purges 4s；
(4) it is passed through the plasma gas that flow is 1000sccm, the plasma gas is H2And PH3Mixed gas,
Wherein H2And PH3Ratio be 49, burst length 4s, the radio frequency of plasma is 13.56MHz, power 600W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2s；
(6) circulation step (2) arrives (5), and control loop number is 1200.
By full spectral laser ellipsometer, the N-type polycrystalline silicon with a thickness of 180.3nm is obtained.It measures and introduces impurity gas PH3
Afterwards, the square resistance measured is 20 Ω.
Embodiment 6
(1) silicon wafer of 158.75mm × 158.75mm is placed in PEALD reaction chamber 6, pressure is adjusted to 200Pa, temperature
Stablize at 250 DEG C；
(2) Si is passed through into reaction chamber2H6Silicon source, flow 400sccm, burst length 1s；
(3) it is passed through inert gas Ar, flow 400sccm, purges 3s；
(4) it is passed through the H that flow is 500sccm2The radio frequency of plasma gas, burst length 3s, plasma is
13.56MHz power 100W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2s；
(6) circulation step (2) arrives (5), and control loop number is 500.
By full spectral laser ellipsometer, the amorphous crystal silicon with a thickness of 59.3nm is obtained.
Embodiment 7
(1) silicon wafer of 158.75mm × 158.75mm is placed in PEALD reaction chamber 6, pressure is adjusted to 2000Pa, temperature
Stablize at 350 DEG C；
(2) Si is passed through into reaction chamber2H6Silicon source, flow 400sccm, burst length 3s；
(3) it is passed through gas He, flow 2000sccm, purges 5s；
(4) it is passed through the H that flow is 2000sccm2The radio frequency of plasma gas, burst length 5s, plasma is
13.56MHz power 100W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2s；
(6) circulation step (2) arrives (5), and control loop number is 300.
By full spectral laser ellipsometer, the coating film thickness for measuring crystal silicon is 32.4nm.
The silicon film thickness of 1 embodiment 1 of table measures result
The silicon film thickness of 2 embodiment 2 of table measures result
The silicon film thickness of 3 embodiment 3 of table measures result
The silicon film thickness of 4 embodiment 4 of table measures result
The silicon film thickness of 5 embodiment 5 of table measures result
The silicon film thickness of 6 embodiment 6 of table measures result
The silicon film thickness of 7 embodiment 7 of table measures result
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, without departing from the inventive concept of the premise, can also make several improvements and modifications, these improvements and modifications also should be regarded as
In the scope of the present invention.
Claims (10)
1. a kind of silica-base film film plating process of crystal silicon solar energy battery, which comprises the steps of:
(1) substrate is placed in PEALD reaction chamber, pressure is adjusted to 30-5000Pa, and temperature is stablized at 50-500 DEG C；
(2) silicon source, flow 50-2000sccm, plated film time 0.5-10s are passed through into reaction chamber；
(3) it is passed through inert gas, flow 50-5000sccm purges 1-20s；
(4) plasma gas that flow is 50-5000sccm, plated film time 1-20s, the power of plasma are passed through
50-2000W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 1-8s；
(6) circulation step (2) arrives (5), until reaching targeted number.
2. the silica-base film film plating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described
Silicon source is SiH4、Si2H6、Si2Cl6、Si2H4Cl2、SiHCl3、SiH2Cl2、SiH3Cl、SiH(NH2)3、TSA、HMDS、SiH
(CH3)3Any one of.
3. the silica-base film film plating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described
Inert gas is any one of Ar, He.
4. the silica-base film film plating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described
Plasma gas is H2Plasma gas is impurity gas and H2Mixed gas.
5. the silica-base film film plating process of crystal silicon solar energy battery according to claim 4, which is characterized in that described
Impurity gas and H in mixed gas2Mixed proportion be 1:10~100.
6. the silica-base film film plating process of crystal silicon solar energy battery according to claim 5, which is characterized in that described
Impurity gas is PH3、B2H6、B(CH3)3、B(C2H5)3That plants is any.
7. the silica-base film film plating process of crystal silicon solar energy battery according to claim 6, which is characterized in that described
Mixed gas is PH3And H2Mixed gas.
8. the silica-base film film plating process of crystal silicon solar energy battery according to claim 6, which is characterized in that described
Mixed gas is B2H6And H2Mixed gas.
9. the silica-base film film plating process of crystal silicon solar energy battery according to claim 1, which is characterized in that including such as
Lower step:
(1) substrate is placed in PEALD reaction chamber, pressure is adjusted to 200-2000Pa, and temperature is stablized at 50-500 DEG C；
(2) silicon source, flow 50-2000sccm, plated film time 1-3s are passed through into reaction chamber；
(3) inert gas flow is 400-2000sccm, purges 3-5s；
(4) it is passed through the plasma gas that flow is 500-2000sccm, the radio frequency of plated film time 3-5s, plasma are
13.56MHz power 50-1000W；
(5) it is purged using the inert gas purge of step (3), the purging duration is 2-6s；
(6) circulation step (2) arrives step (5), until reaching targeted number.
10. according to the silica-base film film plating process of any crystal silicon solar energy battery of claim 4-8, feature exists
In the plasma gas in the step (4) is H in odd-times circulation2Plasma gas, even circulation in be
Impurity gas and H2Mixed gas.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112609171A (en) * | 2020-12-30 | 2021-04-06 | 无锡琨圣智能装备股份有限公司 | Equipment and process for preparing TOPCon battery based on plasma enhanced assisted technology |
| CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
| CN117105536A (en) * | 2023-10-23 | 2023-11-24 | 唐山市蓝欣玻璃有限公司 | Intelligent management system for glass online coating process based on big data |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150087140A1 (en) * | 2012-04-23 | 2015-03-26 | Tokyo Electron Limited | Film forming method, film forming device, and film forming system |
| CN105990121A (en) * | 2015-02-02 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Formation method of doped polycrystalline silicon layer and formation method of semiconductor device |
| CN109576677A (en) * | 2018-12-28 | 2019-04-05 | 复旦大学 | A method of utilizing the SiON film of plasma enhanced atomic layer deposition controllable preparation different oxygen |
-
2019
- 2019-08-01 CN CN201910705525.8A patent/CN110416071A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150087140A1 (en) * | 2012-04-23 | 2015-03-26 | Tokyo Electron Limited | Film forming method, film forming device, and film forming system |
| CN105990121A (en) * | 2015-02-02 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Formation method of doped polycrystalline silicon layer and formation method of semiconductor device |
| CN109576677A (en) * | 2018-12-28 | 2019-04-05 | 复旦大学 | A method of utilizing the SiON film of plasma enhanced atomic layer deposition controllable preparation different oxygen |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112609171A (en) * | 2020-12-30 | 2021-04-06 | 无锡琨圣智能装备股份有限公司 | Equipment and process for preparing TOPCon battery based on plasma enhanced assisted technology |
| CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
| CN117105536A (en) * | 2023-10-23 | 2023-11-24 | 唐山市蓝欣玻璃有限公司 | Intelligent management system for glass online coating process based on big data |
| CN117105536B (en) * | 2023-10-23 | 2024-01-09 | 唐山市蓝欣玻璃有限公司 | Intelligent management system for glass online coating process based on big data |
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Application publication date: 20191105 |