CN110401467B - Radio frequency front-end device and electronic equipment - Google Patents
Radio frequency front-end device and electronic equipment Download PDFInfo
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- CN110401467B CN110401467B CN201910657307.1A CN201910657307A CN110401467B CN 110401467 B CN110401467 B CN 110401467B CN 201910657307 A CN201910657307 A CN 201910657307A CN 110401467 B CN110401467 B CN 110401467B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
- H04B1/405—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency with multiple discrete channels
Abstract
The application discloses radio frequency front end device and electronic equipment, the device includes: a first radio frequency path; a second radio frequency path; the first radio frequency module comprises a medium-high frequency amplification module and a low frequency amplification module, and the medium-high frequency amplification module and the low frequency amplification module transmit signals through a first radio frequency channel; the second radio frequency module comprises a 5G amplification module, and the 5G amplification module transmits signals through a second radio frequency channel; and the third radio frequency module comprises a multi-frequency multi-mode amplification module, and the multi-frequency multi-mode amplification module transmits signals through a second radio frequency channel. Therefore, the multi-frequency multi-mode amplification module and the 5G amplification module are connected with the same radio frequency channel, the medium-high frequency amplification module and the low-frequency amplification module are connected with the other radio frequency channel, and different EN-DC combination configurations between 4G and 5G frequency bands can be realized.
Description
Technical Field
The present application relates to the field of communications technologies, and in particular, to a radio frequency front end device and an electronic apparatus.
Background
The year 2019 is defined as the year of 5G communication, and all large communication operators around the world have formally pulled up the construction of a 5G mobile communication network in this year, and due to the high cost of 5G SA (stand alone), most operators at home and abroad choose to adopt the form of NSA (Non-stand alone), that is, EN-DC (Dual Connectivity of E-UTRA and New radio Dual Connectivity, 4G radio access network and 5G New air interface) in the early stage. EN-DC means that the whole rf front-end architecture will become more complex, and some operators propose to refarming the conventional frequency band of 600 MHz-2700 MHz band, which will further increase the design difficulty of the rf front-end architecture of the mobile terminal.
Disclosure of Invention
An object of the present application is to provide a radio frequency front end device, which can implement different EN-DC combination configurations between 4G and 5G frequency bands by providing a low-cost multi-frequency multi-mode amplification module.
Another object of the present application is to provide an electronic device.
To achieve the above object, a first embodiment of the present application provides a radio frequency front-end apparatus, including: a first radio frequency path; a second radio frequency path; the first radio frequency module comprises a medium-high frequency amplification module and a low frequency amplification module, and the medium-high frequency amplification module and the low frequency amplification module transmit signals through the first radio frequency channel; the second radio frequency module comprises a 5G amplification module, and the 5G amplification module transmits signals through the second radio frequency channel; and the third radio frequency module comprises a multi-frequency multi-mode amplification module, and the multi-frequency multi-mode amplification module transmits signals through the second radio frequency channel.
According to the radio frequency front end device provided by the embodiment of the application, the first radio frequency module comprises a medium-high frequency amplification module and a low-frequency amplification module, the medium-high frequency amplification module and the low-frequency amplification module transmit signals through the first radio frequency channel, the second radio frequency module comprises a 5G amplification module, the 5G amplification module transmits signals through the second radio frequency channel, the third radio frequency module comprises a multi-frequency multi-mode amplification module, and the multi-frequency multi-mode amplification module transmits signals through the second radio frequency channel. Therefore, the multi-frequency multi-mode amplification module and the 5G amplification module of the radio frequency front-end device are connected with the same radio frequency channel, the middle-high frequency amplification module and the low-frequency amplification module are connected with the other radio frequency channel, different EN-DC combination configurations between 4G frequency bands and 5G frequency bands can be achieved, and radio frequency emission channels are separated from each other under each EN-DC combination, so that the two frequency bands can work simultaneously and do not conflict with each other.
According to an embodiment of the present application, the radio frequency front end device further includes: a first power supply path corresponding to the first radio frequency path, the first power supply path being connected to the first radio frequency module to supply power to the first radio frequency module; a second power supply path corresponding to the second radio frequency path, the second power supply path being connected to the second radio frequency module to supply power to the second radio frequency module; and the third power supply path is connected with the third radio frequency module to supply power to the third radio frequency module.
According to an embodiment of the present application, the first power supply path and the second power supply path support an ET power supply mode, and the third power supply path adopts an APT power supply mode.
According to an embodiment of the present application, the 5G amplification module includes a first 5G amplification module and a second 5G amplification module, the first 5G amplification module transmits a signal through the second radio frequency path, the second 5G amplification module transmits a signal through the second radio frequency path, wherein the first 5G amplification module and the second 5G amplification module support different 5G frequency bands.
According to an embodiment of the application, the first 5G amplification module supports an N78 frequency band, or an N77 frequency band, or an N79 frequency band, and the second 5G amplification module supports an N41 frequency band.
According to one embodiment of the application, the medium-high frequency amplification module comprises a first medium-frequency amplifier and a first high-frequency amplifier, and the first medium-frequency amplifier and the first high-frequency amplifier transmit signals through the first radio frequency path; the low-frequency amplification module comprises a first low-frequency amplifier, and the first low-frequency amplifier transmits signals through the first radio frequency channel.
According to one embodiment of the application, the multi-frequency multi-mode amplification module comprises a first low-frequency amplifier, a first intermediate-frequency amplifier and a first high-frequency amplifier, and the first low-frequency amplifier, the first intermediate-frequency amplifier and the first high-frequency amplifier transmit signals through the second radio frequency channel.
According to an embodiment of the present application, in a non-independent networking mode, the first radio frequency module and the second radio frequency module operate simultaneously, or the first radio frequency module and the third radio frequency module operate simultaneously.
According to an embodiment of the present application, when the first radio frequency module and the second radio frequency module operate simultaneously, the first radio frequency module is configured to perform communication in an LTE frequency band, and the second radio frequency module is configured to perform communication in a 5G NR frequency band; when the first radio frequency module and the third radio frequency module work simultaneously, the first radio frequency module is used for carrying out communication of a 5Grefarming frequency band, and the third radio frequency module is used for carrying out communication of an LTE frequency band.
According to an embodiment of the application, in a 4G independent networking mode, the first radio frequency module works to perform communication in an LTE frequency band.
To achieve the above object, an embodiment of a second aspect of the present application provides an electronic device, including the radio frequency front end apparatus according to the embodiment of the first aspect of the present application.
According to the electronic equipment provided by the embodiment of the application, the multi-frequency multi-mode amplification module and the 5G amplification module are connected with the same radio frequency channel through the arranged radio frequency front-end device, and the medium-high frequency amplification module and the low-frequency amplification module are connected with the other radio frequency channel, so that different EN-DC combination configurations between 4G frequency bands and 5G frequency bands can be realized, and radio frequency emission channels are separated from each other under each EN-DC combination, so that the two frequency bands can work simultaneously and do not conflict with each other.
Drawings
Fig. 1 is a block diagram of an rf front-end device according to an embodiment of the present application;
FIG. 2 is a block diagram of an RF front-end according to one embodiment of the present application;
fig. 3 is a block diagram of an rf front-end device according to another embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.
In the embodiment of the present application, an MMPA (Multi-band Multi-mode Power amplifier) and an NR PA (5G amplifier module) are introduced, the MMPA is used for an LTE frequency band when the EN-DC operates, and simultaneously, the MMPA and the NR PA are connected to the same radio frequency channel, a low frequency PAMID (Power amplifier module) integrates a Power amplifier module of a duplexer) (low frequency amplifier module), a medium frequency PAMID (medium frequency amplifier module) is connected to another radio frequency channel, and the low frequency PAMID, the medium frequency PAMID, and the NR PA (5G amplifier module) use PA PMIC ETDAC channels (Power supply channels) corresponding to their radio frequency channels, so that different EN-DC combination configurations between 4G and 5G frequency bands can be realized, and radio frequency transmission channels are separated from each other under each EN-DC combination, so that the two frequency bands can operate simultaneously, and do not conflict with each other.
The radio frequency front-end device and the electronic apparatus according to the embodiments of the present application are described in detail below with reference to the drawings.
Fig. 1 is a block diagram of an rf front-end device according to an embodiment of the present application. As shown in fig. 1, the rf front-end device 100 of the embodiment of the present application includes a first rf path 10, a second rf path 20, a first rf module 30, a second rf module 40, and a third rf module 50.
The first radio frequency module 30 includes a medium-high frequency amplification module 31 and a low frequency amplification module 32, and the medium-high frequency amplification module 31 and the low frequency amplification module 32 transmit signals through the first radio frequency channel 10; the second rf module 40 includes a 5G amplifying module 41, and the 5G amplifying module 41 transmits signals through the second rf path 20; the third rf module 50 includes a multi-band multi-mode amplifying module 51, and the multi-band multi-mode amplifying module 51 transmits signals through the second rf path 20.
As an example, the multi-band multi-mode amplifying module 51 may be PHASE 2 low, medium, high frequency MMPA, i.e. low cost MMPA.
It is understood that the 5G amplifying module 41 may be connected to the second rf path 20 to transmit the 5G signal through the second rf path 20, the middle-high frequency amplifying module 31 may be connected to the first rf path 10 to transmit the middle-high frequency signal, such as the middle-high frequency signal of the LTE band, through the first rf path 10, the low frequency amplifying module 32 may be connected to the first rf path 10 to transmit the low frequency signal, such as the low frequency signal of the LTE band, through the first rf path 10, and the multi-frequency multi-mode amplifying module 51 may be connected to the second rf path 20 to transmit the signal of the LTE band through the second rf path 20.
Further, according to an embodiment of the present application, as shown in fig. 2 to 3, the rf front-end device 100 further includes: a first power supply path 60, a second power supply path 70 and a third power supply path 80, wherein the first power supply path 60 corresponds to the first rf path 10, and the first power supply path 60 is connected to the first rf module 30 to supply power to the first rf module 30; the second power supply path 70 corresponds to the second rf path 20, and the second power supply path 70 is connected to the second rf module 40 to supply power to the second rf module 40; the third power supply path 80 is connected to the third rf module 50 to supply power to the third rf module 50.
It should be noted that the first Power supply path 60, the second Power supply path 70 and the third Power supply path 80 may include a PMIC (Power management IC), wherein, as shown in fig. 3, the first Power supply path 60 is provided with a PMIC0#, the PMIC0# is connected to the first rf module 30, the second Power supply path 70 is provided with a PMIC1#, the PMIC1# is connected to the second rf module 40, the third Power supply path 80 is provided with a PMIC2#, and the PMIC2# is connected to the third rf module 50.
According to one embodiment of the present application, the first power supply path 60 and the second power supply path 70 support an ET (envelope tracking) power supply mode, and the third power supply path 80 employs an APT (Average power tracking) power supply mode. That is, the power supply modes of the first power supply path 60 and the second power supply path 70 may include an ET mode, and the power supply mode of the third power supply path 80 may include an APT mode, in which the ET mode is the most power saving, the APT mode is the next time, in other words, the power supply mode of the first power supply path 60 corresponding to the first rf path 10 is the ET mode, and the power supply mode of the second power supply path 70 corresponding to the second rf path 20 is the ET mode.
Specifically, PMIC0# may use an ET mode to power the first rf module 30, PMIC1# may use an ET mode to power the second rf module 40, and PMIC2# may use an APT mode to power the third rf module 50, wherein when the first power path 60 and the second power path 70 operate in the ET mode, a digital-to-analog converter is further connected to the power paths to implement envelope tracking, as shown in fig. 3, for example, a digital-to-analog converter DAC0 may be connected to the first power path 60, and a digital-to-analog converter DAC1 may be connected to the second power path 70.
That is, the first and second power supply paths 60 and 70 may be ET power supply paths, and the third power supply path 80 may be an APT power supply path.
Therefore, the multi-frequency multi-mode amplification module 51 and the 5G amplification module are connected with the same radio frequency channel, namely the second radio frequency channel 20, the low-frequency amplification module 32 and the medium-high frequency amplification module 31 are connected with the other radio frequency channel, namely the first radio frequency channel 10, and the low-frequency amplification module 32, the medium-high frequency amplification module 31 and the 5G amplification module 41 use a power supply channel corresponding to the radio frequency channels, namely an ET power supply channel, so that the 5G NR frequency band and the 5G fading frequency band can be ensured to work in an ET mode, and the power consumption is effectively saved.
Specifically, according to an embodiment of the present application, as shown in fig. 2 to 3, the 5G amplifying module 41 includes a first 5G amplifying module NR1 and a second 5G amplifying module NR2, the first 5G amplifying module NR1 transmits signals through the second radio frequency path 20, and the second 5G amplifying module NR2 transmits signals through the second radio frequency path 20, wherein the first 5G amplifying module NR1 and the second 5G amplifying module NR2 support different 5G frequency bands.
It should be noted that the first 5G amplification module NR1 and the second 5G amplification module NR2 may be integrally disposed in the 5G amplification module 41.
The first 5G amplification module NR1 supports an N78 band, an N77 band, or an N79 band, and the second 5G amplification module NR2 supports an N41 band.
That is, the first 5G amplification module NR1 is connected to the second rf path 20 to transmit 5G signals of the N78 band, or the N77 band, or the N79 band through the second rf path 20, and the second 5G amplification module NR2 is connected to the second rf path 20 to transmit 5G signals of the N41 band through the second rf path 20.
Further, according to an embodiment of the present application, as shown in fig. 2-3, the medium-high frequency amplification module 31 includes a first intermediate frequency amplifier 310 and a first high frequency amplifier 311, and the first intermediate frequency amplifier 310 and the first high frequency amplifier 311 transmit signals through the first radio frequency path 10; the low frequency amplifying module 32 includes a first low frequency amplifier 320, and the first low frequency amplifier 320 transmits signals through the first rf path 10.
Specifically, the first if amplifier 310 is connected to the first rf path 10 to transmit an if signal of, for example, an LTE band through the first rf path 10, the first hf amplifier 311 is connected to the first rf path 10 to transmit a high frequency signal of, for example, an LTE band through the first rf path 10, and the first lf amplifier 320 is connected to the first rf path 10 to transmit a low frequency signal of, for example, an LTE band through the first rf path 10.
Further, according to an embodiment of the present application, as shown in fig. 2 to 3, the multi-frequency and multi-mode amplifying module 51 includes a first low-frequency amplifier 510, a first intermediate-frequency amplifier 511, and a first high-frequency amplifier 512, and the first low-frequency amplifier 510, the first intermediate-frequency amplifier 511, and the first high-frequency amplifier 512 transmit signals through the second radio frequency path 20.
Specifically, the first low frequency amplifier 510 is connected to the second radio frequency path 20 to transmit low frequency signals, for example, in the LTE band, through the second radio frequency path 20, the first intermediate frequency amplifier 511 is connected to the second radio frequency path 20 to transmit intermediate frequency signals, for example, in the LTE band, through the second radio frequency path 20, and the first high frequency amplifier 512 is connected to the second radio frequency path 20 to transmit high frequency signals, for example, in the LTE band, through the second radio frequency path 20.
According to an embodiment of the present application, in the non-independent networking mode, the first rf module 30 and the second rf module 40 operate simultaneously, or the first rf module 30 and the third rf module 50 operate simultaneously.
When the first radio frequency module 30 and the second radio frequency module 40 work simultaneously, the first radio frequency module 30 is used for performing communication in an LTE frequency band, and the second radio frequency module 40 is used for performing communication in a 5G NR frequency band; when the first rf module 30 and the third rf module 50 work simultaneously, the first rf module 30 is configured to perform 5G refarming frequency band communication, and the third rf module 50 is configured to perform LTE frequency band communication.
Specifically, in the non-independent networking mode, when the first radio frequency module 30 and the first 5G amplification module NR1 operate simultaneously, the first radio frequency module 30 is configured to perform communication in the LTE frequency band, and the first 5G amplification module NR1 is configured to perform communication in the N78 frequency band, or the N77 frequency band, or the N79 frequency band.
Or, in a non-independent networking mode, when the first radio frequency module 30 and the second 5G amplification module NR2 operate simultaneously, the first radio frequency module 30 is configured to perform communication in the LTE frequency band, and the second 5G amplification module NR2 is configured to perform communication in the N41 frequency band.
Further, according to an embodiment of the present application, in the 4G independent networking mode, the first radio frequency module 30 operates to perform communication in an LTE frequency band.
It is understood that in the 4G independent networking mode, the first if amplifier 310 operates to perform communication of the if signal of the LTE band, the first if amplifier 311 operates to perform communication of the high frequency signal of the LTE band, and the first if amplifier 320 operates to perform communication of the low frequency signal of the LTE band.
Specifically, the configuration that can be implemented in the 5G NSA mode (5G non-independent networking mode) is shown in table 1 below:
TABLE 1
Wherein TX1 indicates that the second rf path 20 is turned on, TX0 indicates that the first rf path 10 is turned on, and X indicates that the rf path is not turned on; the 4G only indicates that the medium-high frequency amplification module 31 and the low frequency amplification module 32 operate, and at this time, both the medium-high frequency amplification module 31 and the low frequency amplification module 32 are used for communication in the LTE frequency band; LB + lmhb (nr) endec indicates that the first rf module 30 and the third rf module 50 operate simultaneously, that is, the first low-frequency amplifier 510 in the multi-band and multi-mode amplification module 51 operates simultaneously with the middle-high frequency amplification module 31 and the low-frequency amplification module 32, at this time, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 are used to perform communication in a 5G damping frequency band, and the first low-frequency amplifier 510 is used to perform communication of low-frequency signals in an LTE frequency band; MB + lmh (nr) endec indicates that the first rf module 30 and the third rf module 50 work simultaneously, that is, the first if amplifier 511, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 in the multi-frequency and multi-mode amplification module 51 work simultaneously, at this time, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 are used to perform communication in the 5G damping frequency band, and the first if amplifier 511 is used to perform communication of an if signal in the LTE frequency band; HB + lmh (nr) endec indicates that the first rf module 30 and the third rf module 50 operate simultaneously, that is, the first high-frequency amplifier 512, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 in the multi-frequency and multi-mode amplification module 51 operate simultaneously, at this time, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 are used for performing communication in a 5G damping frequency band, and the first high-frequency amplifier 512 is used for performing communication of high-frequency signals in an LTE frequency band; DC _ LMHB-N78 indicates that the medium-high frequency amplification module 31, the low frequency amplification module 32 and the first 5G amplification module NR1 work simultaneously, at this time, the medium-high frequency amplification module 31 and the low frequency amplification module 32 are used for performing LET frequency band communication, and the first 5G amplification module NR1 is used for performing N78 frequency band, N77 frequency band, or N79 frequency band 5G communication; DC _ LMHB-N41 shows that the middle-high frequency amplification module 31, the low frequency amplification module 32 and the second 5G amplification module NR2 operate simultaneously, at this time, the middle-high frequency amplification module 31 and the low frequency amplification module 32 are used for performing LET frequency band communication, and the second 5G amplification module NR2 is used for performing N41 frequency band 5G communication.
It can be understood that, in the 4G independent networking mode, when the middle-high frequency amplification module 31 and the low frequency amplification module 32 are connected to the first radio frequency path 10, the middle-high frequency amplification module 31 and the low frequency amplification module 32 can perform communication in the LTE frequency band.
When the middle and high frequency amplification module 31 and the low frequency amplification module 32 are connected to the first rf path 10, and the first low frequency amplifier 510 in the multi-frequency multi-mode amplification module 51 is connected to the second rf path 20, the middle and high frequency amplification module 31, the low frequency amplification module 32, and the first low frequency amplifier 510 in the multi-frequency multi-mode amplification module 51 operate simultaneously, wherein the middle and high frequency amplification module 31 and the low frequency amplification module 32 are configured to perform communication in a 5G damping frequency band, and the first low frequency amplifier 510 is configured to perform communication in an LTE frequency band.
When the middle-high frequency amplification module 31 and the low frequency amplification module 32 are connected to the first rf path 10, and the first if amplifier 511 in the multi-band multi-mode amplification module 51 is connected to the second rf path 20, the middle-high frequency amplification module 31, the low frequency amplification module 32, and the first if amplifier 511 in the multi-band multi-mode amplification module 51 operate simultaneously, wherein the middle-high frequency amplification module 31 and the low frequency amplification module 32 are configured to perform communication in a 5G refarming frequency band, and the first if amplifier 511 is configured to perform communication in an LTE frequency band.
When the middle-high frequency amplification module 31 and the low frequency amplification module 32 are connected to the first rf path 10, and the first high frequency amplifier 512 in the multi-frequency multi-mode amplification module 51 is connected to the second rf path 20, the middle-high frequency amplification module 31, the low frequency amplification module 32, and the first high frequency amplifier 512 in the multi-frequency multi-mode amplification module 51 operate simultaneously, wherein the middle-high frequency amplification module 31 and the low frequency amplification module 32 are configured to perform communication in a 5G damping frequency band, and the first high frequency amplifier 512 is configured to perform communication in an LTE frequency band.
When the middle-high frequency amplification module 31 and the low frequency amplification module 32 are connected with the first radio frequency path 10 and the first 5G amplification module NR1 is connected with the second radio frequency path 20, the middle-high frequency amplification module 31, the low frequency amplification module 32 and the first 5G amplification module NR1 work simultaneously, wherein the middle-high frequency amplification module 31 and the low frequency amplification module 32 are used for carrying out LET frequency band communication, and the first 5G amplification module NR1 is used for carrying out N78 frequency band, N77 frequency band, or N79 frequency band 5G communication.
When the middle and high frequency amplification module 31 and the low frequency amplification module 32 are connected to the first radio frequency path 10, and the second 5G amplification module NR2 is connected to the second radio frequency path 20, the middle and high frequency amplification module 31, the low frequency amplification module 32 and the second 5G amplification module NR2 operate simultaneously, wherein the middle and high frequency amplification module 31 and the low frequency amplification module 32 are used for performing LET frequency band communication, and the second 5G amplification module NR2 is used for performing N41 frequency band 5G communication.
Therefore, the multi-frequency multi-mode amplification module 51 and the 5G amplification module are connected with the same radio frequency channel, the middle-high frequency amplification module 31 and the low-frequency amplification module 32 are connected with the other radio frequency channel, different EN-DC combination configurations between 4G frequency bands and 5G frequency bands can be realized, and radio frequency emission channels are separated from each other under each EN-DC combination, so that the two frequency bands can work simultaneously and do not conflict with each other.
To sum up, according to the radio frequency front end device that this application embodiment provided, first radio frequency module includes middle and high frequency and amplifies module and low frequency and amplify the module, and middle and high frequency amplifies module and low frequency and amplifies the module and transmit signals through first radio frequency route, and second radio frequency module includes 5G and amplifies the module, and 5G amplifies the module and transmits signals through second radio frequency route, and third radio frequency module includes multifrequency multimode and amplifies the module, and multifrequency multimode amplifies the module and transmits signals through second radio frequency route. Therefore, the multi-frequency multi-mode amplification module and the 5G amplification module of the radio frequency front-end device are connected with the same radio frequency channel, the middle-high frequency amplification module and the low-frequency amplification module are connected with the other radio frequency channel, different EN-DC combination configurations between 4G frequency bands and 5G frequency bands can be achieved, and radio frequency emission channels are separated from each other under each EN-DC combination, so that the two frequency bands can work simultaneously and do not conflict with each other.
Based on the radio frequency front end device of the above embodiment, an embodiment of the present application further provides an electronic device, including the radio frequency front end device.
According to the electronic equipment provided by the embodiment of the application, the multi-frequency multi-mode amplification module and the 5G amplification module are connected with the same radio frequency channel through the arranged radio frequency front-end device, and the medium-high frequency amplification module and the low-frequency amplification module are connected with the other radio frequency channel, so that different EN-DC combination configurations between 4G frequency bands and 5G frequency bands can be realized, and radio frequency emission channels are separated from each other under each EN-DC combination, so that the two frequency bands can work simultaneously and do not conflict with each other.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. A radio frequency front end device, comprising:
a first radio frequency path;
a second radio frequency path;
the first radio frequency module comprises a medium-high frequency amplification module and a low frequency amplification module, and the medium-high frequency amplification module and the low frequency amplification module transmit signals through the first radio frequency channel;
the second radio frequency module comprises a 5G amplification module, and the 5G amplification module transmits signals through the second radio frequency channel; the 5G amplification module comprises a first 5G amplification module and a second 5G amplification module, the first 5G amplification module transmits signals through the second radio frequency channel, the second 5G amplification module transmits signals through the second radio frequency channel, and the first 5G amplification module and the second 5G amplification module support different 5G frequency bands;
a third radio frequency module comprising a multi-frequency multi-mode amplification module that transmits signals through the second radio frequency path;
when the first radio frequency module and the second radio frequency module work simultaneously, the first radio frequency module is used for carrying out communication in an LTE frequency band, and the second radio frequency module is used for carrying out communication in a 5G NR frequency band;
when the first radio frequency module and the third radio frequency module work simultaneously, the first radio frequency module is used for carrying out communication of a 5Grefarming frequency band, and the third radio frequency module is used for carrying out communication of an LTE frequency band.
2. The radio frequency front end device according to claim 1, further comprising:
a first power supply path corresponding to the first radio frequency path, the first power supply path being connected to the first radio frequency module to supply power to the first radio frequency module;
a second power supply path corresponding to the second radio frequency path, the second power supply path being connected to the second radio frequency module to supply power to the second radio frequency module;
and the third power supply path is connected with the third radio frequency module to supply power to the third radio frequency module.
3. The radio frequency front end device according to claim 2, wherein the first power supply path and the second power supply path support an ET power supply mode, and the third power supply path adopts an APT power supply mode.
4. The radio frequency front end device according to claim 1, wherein the first 5G amplification module supports an N78 frequency band, or an N77 frequency band, or an N79 frequency band, and the second 5G amplification module supports an N41 frequency band.
5. The radio frequency front end device according to claim 1,
the medium-high frequency amplification module comprises a first medium-frequency amplifier and a first high-frequency amplifier, and the first medium-frequency amplifier and the first high-frequency amplifier transmit signals through the first radio frequency channel;
the low-frequency amplification module comprises a first low-frequency amplifier, and the first low-frequency amplifier transmits signals through the first radio frequency channel.
6. The rf front-end apparatus according to claim 1, wherein the multi-band multi-mode amplifying module comprises a first low-frequency amplifier, a first intermediate-frequency amplifier and a first high-frequency amplifier, and the first low-frequency amplifier, the first intermediate-frequency amplifier and the first high-frequency amplifier transmit signals through the second rf path.
7. The radio frequency front end device according to any of claims 1-6, wherein in a non-standalone networking mode, the first radio frequency module operates simultaneously with the second radio frequency module, or the first radio frequency module operates simultaneously with the third radio frequency module.
8. The radio frequency front end device according to any one of claims 1 to 6, wherein in a 4G independent networking mode, the first radio frequency module operates to perform communication in an LTE frequency band.
9. An electronic device, characterized in that it comprises a radio frequency front end arrangement according to any of claims 1-8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111049482A (en) * | 2019-12-17 | 2020-04-21 | 锐石创芯(重庆)科技有限公司 | 5G power amplifier architecture supporting non-independent networking |
| CN111342861B (en) * | 2019-12-17 | 2022-04-19 | 锐石创芯(重庆)科技有限公司 | Radio frequency front end device supporting LTE/NR dual connection and mobile terminal |
| CN111294214B (en) * | 2020-01-21 | 2021-09-14 | Oppo广东移动通信有限公司 | Power supply method and related product |
| CN113746497B (en) | 2020-03-03 | 2022-07-08 | Oppo广东移动通信有限公司 | Radio frequency system and electronic equipment |
| CN111726138B (en) * | 2020-06-05 | 2022-07-01 | 维沃移动通信有限公司 | Radio frequency circuit and electronic device |
| CN113659995B (en) * | 2021-08-12 | 2022-12-13 | Oppo广东移动通信有限公司 | Radio frequency system and communication device |
| CN113676208B (en) * | 2021-08-12 | 2022-07-15 | Oppo广东移动通信有限公司 | Amplifier module, radio frequency system and communication equipment |
| CN113676206B (en) * | 2021-08-12 | 2023-01-03 | Oppo广东移动通信有限公司 | Radio frequency system and communication device |
| CN216721325U (en) * | 2022-01-28 | 2022-06-10 | Oppo广东移动通信有限公司 | Radio frequency module and communication equipment |
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