CN110400754A - A kind of manufacturing method of oxide semiconductor thin-film transistor - Google Patents
A kind of manufacturing method of oxide semiconductor thin-film transistor Download PDFInfo
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- CN110400754A CN110400754A CN201810381129.XA CN201810381129A CN110400754A CN 110400754 A CN110400754 A CN 110400754A CN 201810381129 A CN201810381129 A CN 201810381129A CN 110400754 A CN110400754 A CN 110400754A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000003851 corona treatment Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000001272 nitrous oxide Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 abstract description 15
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 101100060179 Drosophila melanogaster Clk gene Proteins 0.000 description 1
- 101150038023 PEX1 gene Proteins 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 101150014555 pas-1 gene Proteins 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of manufacturing methods of oxide thin film transistor, the manufacturing method is included in form source electrode and drain electrode after, corona treatment is carried out to the channel region that oxide semiconductor layer is constituted using two or more gas, wherein at least includes a kind of non-oxidizing gas；The manufacturing method of the present invention is effectively prevented being carried out arcing problem caused by corona treatment using single non-oxidizing gas and carries out source-drain electrode problem of oxidation caused by corona treatment using simple oxidizing gas, and the thin film transistor (TFT) obtained has excellent device property and homogeneity.
Description
Technical field
The present invention relates to field of liquid crystal display more particularly to a kind of manufacturing methods of oxide semiconductor thin-film transistor.
Background technique
Oxide semiconductor thin-film transistor (TFT) technology because of the advantages of having both multi-crystal TFT and non-crystalline silicon tft, and by
It is considered device most potential in next-generation display technology, wherein the research of indium gallium zinc oxygen (IGZO) TFT is most widely used,
Especially in terms of tft array substrate preparation.But since IGZO stability is poor, when coming using it as active layer material in use,
Easily by source, drain electrode etching liquid damage, so etching barrier layer (ESL) structure is mostly used at present, as shown in Figure 1, passing through increase
One layer of etching barrier layer 06 protects channel region, and source electrode 041 and drain electrode 042 pass through the contact hole on etching barrier layer 06 respectively
It is contacted with oxide semiconductor layer 03, but will increase light shield (mask) technique in this way, cause manufacturing process complicated, cost
It improves.
Therefore back channel etching (BCE) technology has been developed, structure is as shown in Figure 2.It is existing in order to improve product yield
Technology can use nitrogen (N after forming source electrode and drain electrode2), nitrous oxide (N2) etc. O gases constitute oxide semiconductor
Channel carry out corona treatment.Wherein, nitrogen treatment can obtain excellent device property, but be also easy to produce arc discharge
(arcing) cause TFT to wound or burn, seriously affect product yield.The device property that nitrous oxide is handled is poor；
And source electrode and drain electrode easily aoxidizes under nitrous oxide processing, especially when the metal for forming source electrode and drain electrode includes copper metal
When, if the time of corona treatment is shorter, the homogeneity of device is bad, the same substrate 24 in the case where the processing time is 5s
The TFT transfer characteristic curve that a point measures is as shown in Figure 3.
Summary of the invention
In order to solve the above technical problems, the invention discloses a kind of manufacturing method of oxide semiconductor thin-film transistor,
The manufacturing method effectively prevent using single non-oxidizing gas carry out corona treatment caused by arcing problem and
Using source-drain electrode problem of oxidation caused by simple oxidizing gas, and the thin film transistor (TFT) obtained has excellent device property
And homogeneity.
Technical solution provided by the invention is as follows:
The invention discloses a kind of manufacturing method of oxide thin film transistor, the manufacturing methods include the following:
Step 1: forming grid on substrate；
Step 2: being initially formed the gate insulating layer of covering grid, oxide is then formed on gate insulating layer and is partly led
Body layer；
Step 3: forming the source electrode and drain electrode being electrically connected respectively with oxide semiconductor layer；
Step 4: plasma treatment is carried out to the oxide semiconductor layer, the oxide semiconductor layer is carried out etc.
The gas of ion processing includes at least first gas and second gas, and the first gas does not have oxidisability；
Step 5: forming the first insulating film of covering source electrode and drain electrode.
Preferably, first gas is at least one of nitrogen, argon gas and hydrogen, and second gas is nitrous oxide, oxygen
At least one of gas, sulfur hexafluoride and carbon tetrafluoride.
Preferably, first gas is nitrogen, and second gas is nitrous oxide；The volume ratio of first gas and second gas
Not less than 4:1.
Preferably, first gas is argon gas, and second gas is carbon tetrafluoride；The volume ratio of first gas and second gas is not
Less than 6:1.
Preferably, the time for carrying out plasma treatment to oxide semiconductor layer is 12 to 18 seconds.
Preferably, the gas for carrying out plasma treatment to oxide semiconductor layer is including at least first gas and the second gas
The mixed gas of body.
Preferably, above-mentioned steps four include at least:
First stage carries out corona treatment to oxide semiconductor layer using first gas,
Second stage carries out corona treatment to oxide semiconductor layer using second gas,
The first stage and second stage are not carried out in the same time.
Preferably, source electrode and drain electrode is the lamination that third metal and the 4th metal are formed, third metal and gate insulator
Layer contact, the 4th metal are contacted with the first insulating film.
Preferably, the 4th metal is copper.
Preferably, oxide semiconductor layer includes indium gallium zinc oxide.
Compared with prior art, the present invention can bring it is at least one of following the utility model has the advantages that
1, it avoids and carries out arcing problem caused by corona treatment using single non-oxidizing gas；
2, source-drain electrode problem of oxidation caused by simple oxidizing gas is avoided, can handle the long period；
3, oxide semiconductor thin-film transistor of the invention has excellent device property and homogeneity.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, the present invention is given furtherly
It is bright.
Fig. 1 is the structural schematic diagram of the oxide semiconductor thin-film transistor of existing etching barrier layer structure；
Fig. 2 is the structural scheme of mechanism of the oxide semiconductor thin-film transistor of existing back channel etching structure；
Fig. 3 is that the oxide semiconductor thin-film transistor of existing back channel etching structure is carried out in short-term using nitrous oxide
Between corona treatment metacoxal plate difference point measure TFT transfer characteristic curve schematic diagram；
Fig. 4 is the manufacturing method flow diagram of oxide semiconductor thin-film transistor of the present invention；
Fig. 5-Fig. 9 is all step schematic diagrams of the manufacturing method of oxide semiconductor thin-film transistor；
Figure 10 is that oxide semiconductor thin-film transistor of the present invention uses channel after mixed gas progress corona treatment
The schematic diagram in region and its periphery；
Figure 11 is that oxide semiconductor thin-film transistor of the present invention uses mixed gas progress corona treatment metacoxal plate
Different points measure TFT transfer characteristic curve schematic diagram.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
Fig. 4 is the manufacturing method flow diagram of oxide semiconductor thin-film transistor of the present invention, and the present invention is in the source that formed
Behind pole 041 and drain electrode 042, plasma is carried out to the channel region that oxide semiconductor is constituted using two or more gas
Body processing wherein at least includes a kind of non-oxidizing gas.
Fig. 5-Fig. 9 is a kind of all step schematic diagrams of the manufacturing method of oxide thin film transistor of the present invention, as schemed institute
Show the manufacturing method include the following:
Step 1: as shown in figure 5, passing through gate metal deposition, photoresist layer coating, exposure, etching, light on the substrate 100
Resistance layer is removed to form grid 01；The lamination that grid 01 can be constituted for the first metal and the second metal, the first metal and substrate 100
Contact, the first metal such as Ti, the second metal such as Cu；
Step 2: as shown in fig. 6, be initially formed covering grid 01 gate insulating layer 02, then by active layer form a film,
Photoresist layer coating, exposure, etching, photoresist layer removing form oxide semiconductor layer 03 on gate insulating layer 02；Gate insulator
Layer 02 may include the lamination of silicon nitride (SiNX), silica (SiO2) or silicon nitride and silica, oxide semiconductor layer 03
Preferably include indium gallium zinc oxide (IGZO).
Step 3: as shown in fig. 7, removing shape by source-drain electrode metal film forming, photoresist layer coating, exposure, etching, photoresist layer
At the source electrode 041 and drain electrode 042 being electrically connected respectively with oxide semiconductor layer 03；Source electrode 041 and drain electrode 042 can be third gold
Belong to the lamination with the 4th metal, wherein third metal is contacted with oxide semiconductor layer 03, such as Ti, the 4th metal and following coverings
Source electrode 041 and the contact of the first insulating film 05 of drain electrode 042, such as Cu；Oxide semiconductor layer 03 includes first area, second area
And the channel region between first area and second area, source electrode 041 are contacted with first area, drain electrode 042 and the secondth area
Domain contact.
Step 4: as shown in figure 8, plasma treatment is carried out to oxide semiconductor layer 03, to oxide semiconductor layer 03
The gas for carrying out plasma treatment includes at least first gas and second gas, and the first gas does not have oxidisability；Specifically
Ground, first gas and second gas generate in cavity in plasma and are dissociated into plasma form, bang under voltage acceleration
Hit the TFT surface of semi-finished of above-mentioned steps formation, especially channel region surface；First gas must not have oxidisability,
Such as nitrogen (N2), argon gas (Ar), hydrogen (H2) in one of which；Second gas can have oxidisability, can also not aoxidize
Property, such as nitrous oxide (N2O), oxygen (O2), sulfur hexafluoride (SF6), carbon tetrafluoride (CF4) in one of which；First gas
After being mixed with second gas while handling, can also in chronological sequence be handled, gaseous species, ratio and processing when
Between all without limitation.Such as corona treatment is carried out using argon gas and carbon tetrafluoride mixed gas, argon gas and carbon tetrafluoride
Volume ratio is at least 6:1, and the processing time is 20 seconds.
Step 5: as shown in figure 9, forming the first insulating film 05 of covering source electrode 041, drain electrode 042 and channel region
(PAS1)；First insulating layer 05 includes silica.
Embodiment one:
In the present embodiment, the oxide semiconductor layer 03 that above-mentioned steps two are formed contains indium gallium zinc oxide material, on
The source electrode 041 and drain electrode 042 for stating step 3 formation use third metal for titanium, the lamination that the 4th metal is copper, above-mentioned steps four
In to carry out the gas of corona treatment to oxide semiconductor layer 03 include nitrogen and nitrous oxide, nitrogen and an oxidation two
The volume ratio of nitrogen is not less than 4:1, and the processing time is 12-18s.
As shown in Figure 10, the oxide semiconductor thin-film transistor of the present embodiment carries out plasma using this mixed gas
After processing, channel region and neighbouring source electrode 041 and drain electrode 042 is wounded without electric arc or electric arc burn phenomenon.And due to mixed
It closes and defines that first gas is non-oxidizing gas in gas, therefore even if second gas is oxidizing gas, experiment shows i.e.
Make corona treatment longer time, the phenomenon that layers of copper that the 4th metal is formed is oxidized will not occur, therefore due to keeping away
Exempt from the generation of copper oxidative phenomena, can safely handle long period, such as 15s or more.
The device that the present embodiment obtains has excellent characteristic and homogeneity, and the TFT that 24 points of same substrate measure turns
Characteristic curve is moved (i.e. in the case where certain source electrode 041 and constant 042 making alive of drain electrode, between grid 01 and source electrode 041
Voltage difference Vg and drain 042 electric current Id between relation curve) as shown in figure 11.
It should be noted that arbitrarily taking at least two to commonly use in the case where not limiting first gas as non-oxidizing gas
Gas carries out corona treatment and is unable to reach said effect.In addition, first gas and second gas quilt in the present invention
For being dissociated into plasma, and is bombarded under voltage acceleration and arrive channel region surface, other service conditions of gas, such as:
It is different from the solution of the present invention using progress corona treatment after second gas dissociation under first gas (such as nitrogen) protection,
Also it is unable to reach effect of the invention.
The invention discloses a kind of manufacturing method of oxide semiconductor thin-film transistor, step includes: in formation source
Behind pole 041 and drain electrode 042, carried out using the channel region that two or more gas constitutes oxide semiconductor layer 03 etc.
Gas ions processing wherein at least includes a kind of non-oxidizing gas.The manufacturing method of the present invention effectively prevents non-using single
Oxidizing gas carries out arcing problem caused by corona treatment and carries out plasma using simple oxidizing gas
Source-drain electrode problem of oxidation caused by handling, and the thin film transistor (TFT) obtained has excellent device property and homogeneity.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (10)
1. a kind of manufacturing method of oxide thin film transistor, which is characterized in that the manufacturing method include the following:
Step 1: forming grid on substrate；
Step 2: being initially formed the gate insulating layer of covering grid, oxide semiconductor layer is then formed on gate insulating layer；
Step 3: forming the source electrode and drain electrode being electrically connected respectively with oxide semiconductor layer；
Step 4: carrying out plasma treatment to the oxide semiconductor layer, plasma is carried out to the oxide semiconductor layer
The gas of processing includes at least first gas and second gas, and the first gas does not have oxidisability；
Step 5: forming the first insulating film of covering source electrode and drain electrode.
2. the manufacturing method of oxide thin film transistor according to claim 1, it is characterised in that:
The first gas is at least one of nitrogen, argon gas and hydrogen, the second gas be nitrous oxide, oxygen,
At least one of sulfur hexafluoride and carbon tetrafluoride.
3. the manufacturing method of embedded touch control panel according to claim 1, it is characterised in that:
The first gas is nitrogen, and the second gas is nitrous oxide；
The volume ratio of the first gas and second gas is not less than 4:1.
4. the manufacturing method of embedded touch control panel according to claim 1, it is characterised in that:
The first gas is argon gas, and the second gas is carbon tetrafluoride；
The volume ratio of the first gas and second gas is not less than 6:1.
5. the manufacturing method of oxide thin film transistor according to claim 1, it is characterised in that:
The time for carrying out plasma treatment to the oxide semiconductor layer is 12 to 18 seconds.
6. the manufacturing method of oxide thin film transistor according to claim 1, it is characterised in that:
The gas for carrying out plasma treatment to the oxide semiconductor layer is including at least the mixed of first gas and second gas
Close gas.
7. the manufacturing method of oxide thin film transistor according to claim 1, which is characterized in that the step 4 is at least
Include:
First stage carries out corona treatment to the oxide semiconductor layer using first gas,
Second stage carries out corona treatment to the oxide semiconductor layer using second gas,
The first stage and second stage are not carried out in the same time.
8. the manufacturing method of oxide thin film transistor according to claim 1, it is characterised in that:
The source electrode and drain electrode is the lamination that third metal and the 4th metal are formed, the third metal and the gate insulator
Layer contact, the 4th metal are contacted with first insulating film.
9. the manufacturing method of oxide thin film transistor according to claim 8, it is characterised in that:
4th metal is copper.
10. the manufacturing method of oxide thin film transistor according to claim 1, it is characterised in that:
The oxide semiconductor layer includes indium gallium zinc oxide.
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| CN113451412A (en) * | 2020-04-01 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | TFT and manufacturing method thereof |
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| CN113451412B (en) * | 2020-04-01 | 2023-08-29 | 重庆康佳光电科技有限公司 | TFT and manufacturing method thereof |
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