CN110385530A - A kind of method that quasi-molecule laser etching calcium fluoride crystal forms periodic stripe - Google Patents
A kind of method that quasi-molecule laser etching calcium fluoride crystal forms periodic stripe Download PDFInfo
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- CN110385530A CN110385530A CN201910634479.7A CN201910634479A CN110385530A CN 110385530 A CN110385530 A CN 110385530A CN 201910634479 A CN201910634479 A CN 201910634479A CN 110385530 A CN110385530 A CN 110385530A
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- laser
- calcium fluoride
- fluoride crystal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of methods that quasi-molecule laser etching calcium fluoride crystal forms periodic stripe.The nanosecond ultraviolet pulse light beam that this method generates excimer laser successively irradiates after attenuator, imaging diaphragm and focusing objective len shaping on calcium fluoride crystal surface.The present invention not only forms periodic stripe in calcium fluoride crystal, but also preparation method time-consuming is short, high-efficient, and the action time of excimer laser and calcium fluoride crystal material was only tens nanoseconds, and entire laser action process also only needs the several seconds can be completed.Method provided by the invention is simple and easy to control, and the energy density and frequency of laser, the time of irradiation and umber of pulse etc. accurately control.Nanosecond excimer laser is used in method provided by the invention, opposite femtosecond laser cost is lower.
Description
Technical field
The invention belongs to transparent optical material technical fields, are specifically related to a kind of quasi-molecule laser etching calcium fluoride crystal
The method for forming periodic stripe.
Background technique
With the development of laser technology, laser is widely used in material micro Process field.Researcher is using laser
Material is carried out in micro process, will appear orderly nano surface knot on its surface after finding multi-pulse laser exposed material
Structure.1961 Birnbaum [Applied Physics, 1965,36:3688] utilize the various semiconductor materials of pulse laser machining
Shi Shouci has found this periodic striated surface structure.Hereafter, people are in metal, semiconductor, dielectric and polymerization
The material surfaces such as object have found periodic stripe structure.Induced with laser periodic stripe structure usually with the wavelength of irradiation laser
There is obvious relation between persistence with polarization state, especially in ultra-short pulse laser, under Femtosecond-Laser Pulse Excitation, which, which occurs nearly in, appoints
What material surface.The preparation process of induced with laser periodic stripe structure does not need cumbersome step, simple technique
It realizes functionalizing material surface, has expanded the application of material, be a kind of economic friendly preparation method.
Under the effect of nanosecond excimer laser, researcher also has found periodic stripe structure on many materials surface,
For example, the 193nmArF quasi-molecule that K.Serna [Applied Physics, 1994, A 58:197-202] is 12ns using pulsewidth
Laser irradiation Ge/Sb/Ge/Sb multilayer film, and J.J.Yu [Applied Surface Science, 2000,154-155:670-
674] SiO is irradiated using the 248nm KrF excimer laser that pulsewidth is 23ns2/ Si structure, and yellow peak etc. [Chinese laser,
2001,28:189-192] process of macromolecule PET fiber etc. is handled using the 308nmXeCl excimer laser that pulsewidth is 50ns
In observed ripple struction on the surface of the material.But as a kind of excellent optical material, in the standard point of calcium fluoride crystal
During sub- laser irradiation, researcher do not observe periodic stripe structure [Proceedings of SPIE, 2002,
4637:13-20；Applied Surface Science 2013,265:648-652].
Summary of the invention
In order to solve the above technical problem, the present invention provides a kind of quasi-molecule laser etching calcium fluoride crystals to form periodicity
The method of striped.
In order to achieve the object of the present invention, the invention adopts the following technical scheme:
A kind of method that quasi-molecule laser etching calcium fluoride crystal forms periodic stripe, generates excimer laser
Nanosecond ultraviolet pulse light beam successively through attenuator, imaging diaphragm and focusing objective len shaping after irradiation on calcium fluoride crystal surface.
Further technical solution: the calcium fluoride crystal is monocrystal material or polycrystalline material.
Further technical solution: the excimer laser is the F that wavelength is 157nm2Excimer laser or wavelength
Be 193nm ArF excimer laser or wavelength be 248nm KrF excimer laser or wavelength be 308nm XeCl standard point
Sub- laser or wavelength are the XeF excimer lasers of 351nm.
Further technical solution: the nanosecond ultraviolet pulse light beam pulse duration range was 1~100 nanosecond, energy density is big
In the damage threshold of calcium fluoride crystal.
Further technical solution: the angle of the calcium fluoride crystal surface normal and incident beam is greater than 0 ° and is less than
1°。
The beneficial effects of the present invention are:
(1) nanosecond ultraviolet pulse light beam through attenuator, imaging diaphragm and focusing objective len after, excimer laser light-emitting window
Rectangular light spot is shaped to circular light spot, and wherein circular light spot diameter can be down to micron dimension.Compared with initial rectangular hot spot, warp
The energy density of circular light spot promotes several orders of magnitude after focusing.Present invention discover that the shape of calcirm-fluoride sample surfaces periodic stripe
At there are an energy window, i.e. energy window needs the damage threshold greater than calcium fluoride crystal, is less than calcium fluoride crystal again
Form the energy of dell shape pattern damage, that is to say, that periodic stripe cannot be formed more than or less than energy window, then
The present invention is the energy of adjustable incipient beam of light by changing the discharge voltage of laser itself and combining attenuator, to realize
Control to energy window.Nanosecond ultraviolet pulse beam shaping can be quickly that can carry out on calcium fluoride crystal surface by the application
The light beam of periodic stripe for etching and being formed.
(2) for the present invention compared with traditional photoetching technique etc., preparation method time-consuming of the present invention is short, high-efficient, and quasi-molecule swashs
The action time of light and calcium fluoride crystal material was only tens nanoseconds, and entire laser action process also only needs the several seconds can be completed.
Method provided by the invention is simple and easy to control, and the energy density and frequency of laser, the time of irradiation and umber of pulse etc. can be controlled accurately
System.
(3) nanosecond excimer laser has been used in method provided by the invention, the wavelength of excimer laser is in ultraviolet waves
Section, photon energy is high, and peak power is big, small to the heat affecting of material, is highly suitable for the processing of micro-nano pattern, and opposite
Femtosecond laser cost is lower.
Detailed description of the invention
Fig. 1 is laser irradiation experimental provision.
Fig. 2 is the periodic stripe that 193nm ArF excimer laser irradiates that calcium fluoride mono crystal rear surface is formed.
Fig. 3 is the periodic stripe that 248nm KrF excimer laser irradiates that calcium fluoride mono crystal rear surface is formed.
Specific embodiment
More specific detail is made to technical solution of the present invention below with reference to embodiment.About attenuator, imaging diaphragm
With being described below for focusing objective len:
Attenuator: being mainly used for carrying out decaying adjustment to the laser energy in optical path, to meet etching demand.
Imaging diaphragm: a part in initial hot spot is intercepted, circular uniform beam is formed.
Focusing objective len: by focal imaging, the circular light spot at diaphragm is imaged on sample present position.
Embodiment 1
(1) laser irradiating device is as shown in Figure 1, experiment carries out under normal atmospheric environment.Light-source system is ArF quasi-molecule
Laser, optical maser wavelength 193nm, pulsewidth are about 20ns, and initial spot size is 20mm × 8mm, the nearly flat-top distribution of hot spot.Swash
Light beam successively acts perpendicularly to sample after attenuator, imaging diaphragm and focusing objective len.After focusing objective len at sample
Circular light spot diameter be about 160 μm.Excimer laser system can be operated by control system, realize laser unlatching and
The adjustment of the laser parameters such as shutdown and discharge voltage, number of pulses, repetition rate, while can control three-dimensional mobile platform
Movement, to change exposure spots position on sample.
(2) calcium fluoride mono crystal sample is fixed in three-dimensional mobile platform, beam orthogonal is made to be incident on sample, in order to avoid
The reflected light that vertical incidence generates has an impact light beam parameters, can slightly adjust calcium fluoride mono crystal sample position, make sample
The angle of surface normal and incident beam is greater than 0 °, less than 1 °.
(3) choosing laser pulse energy metric density is 7.34mJ/cm2, pulse irradiation calcium fluoride mono crystal sample.Use scanning
The microscopic appearance of Electronic Speculum acquisition periodic stripe.As shown in Fig. 2, there is multiple periodic stripes, striped in laser irradiation region
Spacing is differed from 170nm to 550nm.
Embodiment 2
(1) laser irradiating device is as shown in Figure 1, experiment carries out under normal atmospheric environment.Light-source system is KrF quasi-molecule
Laser, optical maser wavelength 248nm, pulsewidth are about 20ns, and initial spot size is 20mm × 8mm, the nearly flat-top distribution of hot spot.Swash
Light beam successively acts perpendicularly to sample after attenuator, imaging diaphragm and focusing objective len.After focusing objective len at sample
Circular light spot diameter be about 350 μm.Control system can control excimer laser system and three-dimensional mobile platform simultaneously.
(2) calcium fluoride mono crystal sample is fixed in three-dimensional mobile platform, beam orthogonal is made to be incident on sample, in order to avoid
The reflected light that vertical incidence generates has an impact light beam parameters, can slightly adjust calcium fluoride mono crystal sample position.
(3) choosing laser pulse energy metric density is 36.67mJ/cm2, pulse irradiation calcium fluoride mono crystal sample.Using sweeping
Retouch the microscopic appearance that Electronic Speculum obtains periodic stripe.As shown in Fig. 2, the striated structure middle ware, away from width, both sides form bifurcated knot
Structure spacing is narrow, and the period respectively may be about 1000nm and 300nm after measurement.
Claims (5)
1. a kind of method that quasi-molecule laser etching calcium fluoride crystal forms periodic stripe, it is characterised in that: swash quasi-molecule
The nanosecond ultraviolet pulse light beam that light device generates successively is irradiated after attenuator, imaging diaphragm and focusing objective len shaping in calcirm-fluoride crystalline substance
Body surface face.
2. the method as described in claim 1, it is characterised in that: the calcium fluoride crystal is monocrystal material or polycrystalline material.
3. the method as described in claim 1, it is characterised in that: the excimer laser is the F that wavelength is 157nm2Quasi-molecule
Laser or wavelength are the ArF excimer lasers of 193nm or wavelength is the KrF excimer laser of 248nm or wavelength is
The XeCl quasi-molecule laser or wavelength of 308nm is the XeF excimer laser of 351nm.
4. the method as described in claim 1, it is characterised in that: the nanosecond ultraviolet pulse light beam pulse duration range is received for 1~100
Second, energy density are greater than the damage threshold of calcium fluoride crystal.
5. the method as described in claim 1, it is characterised in that: the angle of the calcium fluoride crystal surface normal and incident beam
Greater than 0 ° and less than 1 °.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111451629A (en) * | 2020-04-20 | 2020-07-28 | 中国科学院合肥物质科学研究院 | Excimer laser rear-end optical path system |
| CN113210871A (en) * | 2021-04-29 | 2021-08-06 | 中国石油大学(北京) | Optical path system of excimer laser and preparation method of polyimide film |
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2019
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| KR20060090055A (en) * | 2005-02-07 | 2006-08-10 | 삼성전자주식회사 | Laser apparatus and making method of thin film transistor using the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111451629A (en) * | 2020-04-20 | 2020-07-28 | 中国科学院合肥物质科学研究院 | Excimer laser rear-end optical path system |
| CN113210871A (en) * | 2021-04-29 | 2021-08-06 | 中国石油大学(北京) | Optical path system of excimer laser and preparation method of polyimide film |
| CN113210871B (en) * | 2021-04-29 | 2022-06-17 | 中国石油大学(北京) | Preparation method of polyimide film with periodic micro-nano structure |
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Application publication date: 20191029 |