CN110376666B - 一种中红外波段的超宽带完美吸收器及其制备方法 - Google Patents
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 52
- 238000010521 absorption reaction Methods 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 23
- 239000002063 nanoring Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002107 nanodisc Substances 0.000 claims 1
- 238000000862 absorption spectrum Methods 0.000 description 15
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明提供了一种中红外波段的超宽带完美吸收器及其制备方法。该吸收器由下及上依次设有基底层、非金属介质层、金属吸收层和非金属抗反射层,金属吸收层连接于非金属介质层上表面和顶部非金属抗反射层下表面,非金属介质层连接于基底层上表面。所述金属吸收层由多个金属吸收单元组成,该吸收器具有吸收效率高、角度不敏感、工作波段宽、热稳定性好的优点,在性能上超越了传统的吸收器。
Description
技术领域
本发明涉及吸波器技术领域,具体涉及一种中红外波段的超宽带完美吸收器及其制备方法。
背景技术
随着现代科学技术的迅猛发展,宽带完美吸收体一直以来都是科技领域的热点课题;尤其是可见光红外波段宽带吸收,因其在太阳能采集、红外探测、信息传感、光热利用领域的重要应用需求,更是受到了人们的广泛关注。
近年来,人们设计了各种各样的吸波结构,例如,平面金属/介质结构、反射金属光栅结构、超材料结构和基于表面等离激元的结构。基于等离激元超构材料体系实现全吸收的方案有很多,金属颗粒-介质层-金属层超构材料体系是实现超吸收的典型结构之一。与传统方法相比,该体系具有亚波长特性,一般体系的整体厚度只有工作波长的几百分之一。但这种结构一般工作波段较窄。另外超材料结构和表面等离激元的新型吸波结构凭借近乎完美的吸收效率、随角度偏振不敏感、结构单元小、质量轻的特性,在设计选择性热发射器,生物传感器和太阳能收集系统领域具有很大的潜在应用价值。所以,设计吸收效率高、角度不敏感、工作波段宽、热稳定性好的高效宽谱吸波结构仍是该领域的一大挑战。
发明内容
为了解决现有技术制备的宽带吸收器工作波段窄、吸收效率低、角度敏感、热稳定性差的问题,本发明提供一种中红外波段的超宽带完美吸收器及其制备方法。
本发明提供的一种中红外波段的超宽带完美吸收器,包括:
基底层;
设置在基底层上的非金属介质层;
设置在非金属介质层上的金属吸收层;
设置在金属吸收层上的非金属抗反射层;
其中,金属吸收层由两个纳米圆环和两个椭圆纳米盘按周期阵列而成。
进一步地,所述基底层由不透明耐火金属材料制成,不透明耐火金属优选为钛、钨、镍或铬。
进一步地,所述非金属介质层采用半导体材料制作而成,半导体材料优选为二氧化硅。
进一步地,所述金属吸收层采用不透明耐火金属铬制作而成。
进一步地,所述非金属抗反射层采用半导体材料制作而成,半导体材料优选为二氧化硅。
进一步地,所述基底层、非金属介质层、金属吸收层和非金属抗反射层的厚度分别为300纳米、50纳米、70纳米、200纳米。
进一步地,所述两个纳米圆环的外半径(R)为160纳米,内半径(r)为50纳米;所述两个椭圆纳米盘的长半轴(D)为150纳米,短半轴(d)为60纳米;所述周期(P)为400纳米。
上述中红外波段的超宽带完美吸收器的制备方法,包括以下步骤:
步骤1、准备洁净的玻璃片;
步骤2、在步骤1玻璃片上蒸镀一层金属膜,形成基底层;
步骤3、在步骤2的基底层上蒸镀一层半导体材料,形成非金属介质层;
步骤4、在经步骤3的非金属介质层上铺设金属纳米结构,形成金属吸收层;
步骤5、在步骤4的金属吸收层上蒸镀一层半导体材料,形成非金属抗反射层,得到中红外波段的超宽带完美吸收器。
进一步地,在步骤4中,通过在非金属介质层表面上自旋涂覆光刻胶,并利用电子束曝光和显影技术形成目标结构的逆结构,然后利用电子束沉积一定厚度的金属层;其中目标结构为两个纳米圆环和两个椭圆纳米盘按周期阵的结构。
进一步地,在步骤5中,通过磁溅射法蒸镀一层半导体材料,形成非金属抗反射层,然后剥离多余的光刻胶并对非金属抗反射层表面进行平面化,得到中红外波段的超宽带完美吸收器。
进一步地,步骤2、3和5中的镀膜采用磁控溅射法镀膜。
本发明的有益效果:本发明提供了一种中红外波段的超宽带完美吸收器及其制备方法,该吸收器具有吸收效率高、角度不敏感、工作波段宽、热稳定性好的优点,在性能上超越了传统的吸收器;在入射光即太阳光的照射下,对1022~3372纳米的太阳光波段的平均吸收率超过93.9%,从而实现对太阳光的完全抗反射和太阳能的高效吸收。该吸收器结构简单,易于制备,简化实验制备流程,节省人力物力,具有很高的实用价值。
附图说明
以下将结合附图对本发明做进一步详细说明。
图1为本发明中红外波段的超宽带完美吸收器的结构示意图。
图2为本发明实施例1中红外波段的超宽带完美吸收器的吸收光谱。
图3为本发明实施例1中红外波段的超宽带完美吸收器在0°-50°斜入射下对应的吸收光谱;
图4为本发明实施例1~5中红外波段的超宽带完美吸收器顶部非金属抗反射层4厚度H从0纳米至200纳米对应的吸收光谱。
图5为本发明实施例1、6、7、8、9中红外波段的超宽带完美吸收器金属吸收层3中纳米圆环外半径R=160纳米,内半径r从30纳米至70纳米对应的吸收光谱。
图6为本发明实施例1、10、11、12、13中红外波段的超宽带完美吸收器金属吸收层3中纳米圆环内半径r=50纳米,外半径R从120纳米至160纳米对应的吸收光谱。
在图1中:1、基底层;2、非金属介质层;3、金属吸收层;4、顶部非金属抗反射层。
具体实施方式
如图1c所示,本发明的一种中红外波段的超宽带完美吸收器,由下及上依次设有基底层1、非金属介质层2、金属吸收层3和非金属抗反射层4,金属吸收层3连接于非金属介质层2上表面和顶部非金属抗反射层4下表面,非金属介质层2连接于基底层1上表面。金属吸收层3由两个纳米圆环和两个椭圆纳米盘组成的结构单元按周期阵列而成。基底层1由不透明耐火金属材料制成,不透明耐火金属材料可以是钛、钨、镍或铬。非金属介质层2和非金属抗反射层4均由半导体材料制成,半导体材料可以为二氧化硅。金属吸收层3由铬制成。
上述中红外波段的超宽带完美吸收器的制备方法,包括以下步骤:
步骤1、准备洁净的玻璃片;
步骤2、镀膜,在步骤1的玻璃片上蒸镀一层金属膜,形成基底层1;
步骤3、镀膜,在步骤2的基底层1上蒸镀一层半导体材料,形成非金属介质层2;
步骤4、铺设金属纳米结构,在经步骤3的非金属介质层2上铺设金属纳米结构,形成金属吸收层3;
步骤5、镀膜,在步骤4的金属吸收层3上蒸镀一层半导体材料,形成顶部非金属抗反射层4,得到中红外波段的超宽带完美吸收器。
在步骤4中,通过在非金属介质层2表面上自旋涂覆光刻胶,并利用电子束曝光和显影技术形成目标结构的逆结构,然后利用电子束沉积一定厚度的金属层。在步骤5中,通过磁溅射法蒸镀一层半导体材料,形成顶部非金属抗反射层4,然后剥离多余的光刻胶并对非金属抗反射层4表面进行平面化形成中红外波段的超宽带完美吸收器。步骤2、3和5中的镀膜采用磁控溅射法镀膜。
实施例1:
本实施例的一种中红外波段的超宽带完美吸收器,具体如下:
基底层1,材料为钛,厚度h3=300纳米;
非金属介质层2,材料为二氧化硅,厚度h2=50纳米;
金属吸收层3,材料为铬,厚度h1=70纳米;
非金属抗反射层4,材料为二氧化硅,厚度h4=200纳米;
其中,金属吸收层3由两个纳米圆环和两个椭圆纳米盘按周期阵列而成,阵列周期(P)为400纳米;纳米圆环的外半径(R)为160纳米,内半径(r)为50纳米;椭圆形纳米盘的长半轴(D)为150纳米,短半轴(d)为60纳米。
图2显示了本实施例中红外波段的超宽带完美吸收器的吸收光谱,可以清楚的看到,吸收率大于90%的吸收光谱范围的宽度达到2350纳米,覆盖了近红外和中红外波段的主要频率范围,实现了对太阳光的宽频吸收。由此可见,耐火材料的金属基底可以提供更宽频率范围的太阳能吸波响应。
图3显示了本实施例中红外波段的超宽带完美吸收器在0°-50°斜入射下的吸收光谱,可以清楚的看到,在50°斜入射下时吸收率大于90%的吸收光谱范围是965纳米到3165纳米,光谱宽度达到2200纳米,实现了对太阳光的宽频吸收。
实施例2:
在实施例1的基础上,去除非金属抗反射层4,其他与实施例1相同。即非金属抗反射层4的厚度为0纳米。
实施例3:
在实施例1的基础上,将非金属抗反射层4的厚度修改为50纳米,其他与实施例1相同。
实施例4:
在实施例1的基础上,将非金属抗反射层4的厚度修改为100纳米,其他与实施例1相同。
实施例5:
在实施例1的基础上,将非金属抗反射层4的厚度修改为150纳米,其他与实施例1相同。
图4显示了实施例1~5的中红外波段的超宽带完美吸收器顶部非金属抗反射层4厚度H从0纳米-200纳米对应的吸收光谱,可以清楚的看到,当顶部非金属抗反射层4厚度H=200纳米时,吸收率大于90%的吸收光谱是最优的,实现了对太阳光的宽频吸收。
实施例6:
在实施例1的基础上,将纳米圆环的内半径(r)修改为30纳米,其他与实施例1相同。
实施例7:
在实施例1的基础上,将纳米圆环的内半径(r)修改为40纳米,其他与实施例1相同。
实施例8:
在实施例1的基础上,将纳米圆环的内半径(r)修改为60纳米,其他与实施例1相同。
实施例9:
在实施例1的基础上,将纳米圆环的内半径(r)修改为70纳米,其他与实施例1相同。
图5显示了实施例1、6、7、8、9的中红外波段的超宽带完美吸收器金属吸收层3中纳米圆环外半径R=160纳米,内半径r从30纳米-70纳米对应的吸收光谱,可以清楚的看到,当纳米圆环内半径为50纳米时,吸收率大于90%的吸收光谱是最优的,实现了对太阳光的宽频吸收。
实施例10:
在实施例1的基础上,将纳米圆环的外半径(R)修改为120纳米,其他与实施例1相同。
实施例11:
在实施例1的基础上,将纳米圆环的外半径(R)修改为130纳米,其他与实施例1相同。
实施例12:
在实施例1的基础上,将纳米圆环的外半径(R)修改为140纳米,其他与实施例1相同。
实施例13:
在实施例1的基础上,将纳米圆环的外半径(R)修改为150纳米,其他与实施例1相同。
图6显示了实施例1、10、11、12、13的中红外波段的超宽带完美吸收器金属吸收层3中纳米圆环外半径r=50纳米,内半径R从120纳米-160纳米对应的吸收光谱,可以清楚的看到,当纳米圆环外半径为160纳米时,吸收率大于90%的吸收光谱是最优的,实现了对太阳光的宽频吸收。
综上所述,本发明的中红外波段的超宽带完美吸收器可以实现对太阳光的完全抗反射和对太阳能的高效吸收。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
Claims (5)
1.一种中红外波段的超宽带完美吸收器,包括:
基底层;
设置在基底层上的非金属介质层;
设置在非金属介质层上的金属吸收层;
设置在金属吸收层上的非金属抗反射层;
其中,所述金属吸收层由两个纳米圆环和两个椭圆纳米盘按周期阵列而成,所述基底层由不透明耐火金属材料制成,所述非金属介质层采用半导体材料制作而成,所述金属吸收层采用不透明耐火金属材料制作而成,所述非金属抗反射层采用半导体材料制作而成,所述不透明耐火金属为钛、钨、镍或铬,所述半导体材料为二氧化硅;所述基底层、非金属介质层、金属吸收层和非金属抗反射层的厚度分别为300纳米、50纳米、70纳米、200纳米;所述两个纳米圆环的外半径为160纳米,内半径为50纳米;所述两个椭圆纳米盘的长半轴为150纳米,短半轴为60纳米;所述周期为400纳米。
2.根据权利要求1所述的中红外波段的超宽带完美吸收器的制备方法,包括以下步骤:
步骤1、准备洁净的玻璃片;
步骤2、在步骤1玻璃片上蒸镀一层金属膜,形成基底层;
步骤3、在步骤2的基底层上蒸镀一层半导体材料,形成非金属介质层;
步骤4、在经步骤3的非金属介质层上铺设金属纳米结构,形成金属吸收层;
步骤5、在步骤4的金属吸收层上蒸镀一层半导体材料,形成非金属抗反射层,得到中红外波段的超宽带完美吸收器。
3.根据权利要求2所述的方法,其特征在于:在步骤4中,通过在非金属介质层表面上自旋涂覆光刻胶,并利用电子束曝光和显影技术形成目标结构的逆结构,然后利用电子束沉积一定厚度的金属层;其中目标结构为两个纳米圆环和两个椭圆纳米盘按周期阵的结构。
4.根据权利要求3所述的方法,其特征在于:在步骤5中,通过磁溅射法蒸镀一层半导体材料,形成非金属抗反射层,然后剥离多余的光刻胶并对非金属抗反射层表面进行平面化,得到中红外波段的超宽带完美吸收器。
5.根据权利要求2所述的方法,其特征在于:步骤2、3和5中的镀膜采用磁控溅射法镀膜。
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