CN110370166B - Chuck table and grinding device - Google Patents
Chuck table and grinding device Download PDFInfo
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- CN110370166B CN110370166B CN201910279359.XA CN201910279359A CN110370166B CN 110370166 B CN110370166 B CN 110370166B CN 201910279359 A CN201910279359 A CN 201910279359A CN 110370166 B CN110370166 B CN 110370166B
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- wafer
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- chuck table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Abstract
Provided are a chuck table and a grinding device, which can prevent grinding dust from adhering to a holding surface of the chuck table holding a wafer and prevent the lower surface of the wafer from being polluted when grinding water is sprayed from the outer periphery side of the wafer to the center. In a chuck table (2), a disc-shaped porous plate (21) having a holding surface (211) with a diameter substantially equal to that of a wafer is supported on a base (22), and an annular portion (23) surrounds the side surface of the porous plate (21), wherein the annular portion (23) has: a ring upper surface (234) which is formed in a ring shape and is flush with the holding surface (211); and an outer side surface extending downward from the outer peripheral end of the ring upper surface (234), the outer side surface being formed by a hanging surface (231) and an end extended surface (232), the hanging surface (231) hanging from the outer peripheral end of the ring upper surface, the end extended surface (232) connecting the lower end of the hanging surface (231) and the upper surface (224) of the base (22), and the diameter of the end extended surface (232) increasing from the lower end of the hanging surface (231) toward the upper surface (224) of the base (22).
Description
Technical Field
The present invention relates to a chuck table for holding a wafer and a grinding apparatus having the chuck table.
Background
The grinding device comprises: a chuck table having a holding surface for holding a wafer; and a grinding unit that rotates a grinding wheel on which a grinding whetstone is annularly disposed to grind the wafer held by the chuck table by the grinding whetstone, wherein a holding surface for holding the wafer is parallel to a grinding surface of the grinding whetstone to grind an upper surface of the wafer held by the holding surface.
In the grinding apparatus configured as described above, the chuck table holding the wafer is rotated and the grinding wheel is rotated, so that the grinding wheel for grinding the grinding wheel is advanced from the outer peripheral side to the center of the wafer, and the wafer is ground while supplying grinding water to the grinding wheel. The grinding water is also subjected to centrifugal force caused by the rotation of the grinding wheel, and therefore, the grinding water is scattered from the outer periphery of the wafer toward the center (see, for example, patent document 1).
Patent document 1: japanese patent laid-open publication No. 2012-121118
However, since the grinding water directed from the outer periphery of the wafer toward the center is sprayed on the side surface of the wafer, the grinding water containing the grinding swarf enters the gap between the lower surface of the wafer (actually, the lower surface of the protective tape stuck to the lower surface of the wafer) and the holding surface. Therefore, grinding chips enter and adhere to the portion of the holding face that holds the outer peripheral portion of the wafer. In addition, when the grinding chips adhere to the portion of the holding surface, there is a problem that the lower surface of the peripheral portion held by the portion of the wafer is also contaminated.
Disclosure of Invention
Therefore, when the grinding water is jetted from the outer peripheral side of the wafer toward the center, it is required that the grinding chips do not adhere to the holding surface of the chuck table holding the wafer and do not contaminate the lower surface of the wafer.
The invention of claim 1 is a chuck table attached to a grinding apparatus for supplying grinding water to a grinding whetstone to grind a disk-shaped wafer, and sucking and holding the wafer, the chuck table including: a disk-shaped porous plate having a holding surface having substantially the same diameter as the surface of the wafer; a base having an upper surface for supporting a surface on the opposite side of the holding surface, and having a communication path for communicating the upper surface with a suction source; and a ring-shaped portion surrounding a side surface of the porous plate supported by the base, the ring-shaped portion having: a ring upper surface which is the same as the holding surface and is formed in a ring shape; and an outer side surface extending downward from an outer peripheral end of the upper surface of the ring, the outer side surface being formed of a hanging surface hanging downward from the outer peripheral end of the upper surface of the ring and an end expanded surface connecting a lower end of the hanging surface with an upper surface of the base, and a diameter of the end expanded surface increasing from the lower end of the hanging surface toward the upper surface of the base.
The invention of claim 2 is a grinding apparatus having the chuck table, wherein the grinding apparatus includes: a terminal extension surface height measuring unit that measures a height of the holding surface and a height of the terminal extension surface; a wafer upper surface height measuring unit that measures a height of an upper surface of the wafer held by the holding surface; a storage unit that stores a difference between the height of the holding surface measured by the end extended surface height measuring unit and a height of the end extended surface at a position spaced apart from a rotation center of the chuck table by a predetermined distance measured by the end extended surface height measuring unit; and a calculation unit that calculates a difference between the height of the upper surface of the wafer measured by the upper surface height measurement unit and the height of the end extended surface at a position spaced apart from the rotation center of the chuck table by a predetermined distance measured by the end extended height measurement unit, subtracts the height difference stored in the storage unit from the difference, calculates the thickness of the wafer held by the chuck table, and terminates grinding when the thickness of the wafer set in advance coincides with the thickness of the wafer calculated by the calculation unit.
The invention of claim 3 is a grinding apparatus having the chuck table, wherein the grinding apparatus includes: a terminal extension surface height measuring unit that measures a height of the terminal extension surface; a wafer upper surface height measuring unit that measures a height of the holding surface and a height of an upper surface of the wafer held by the holding surface; a storage unit that stores a difference between a height of the end extended surface at a position spaced apart from a rotation center of the chuck table by a predetermined distance in the end extended surface measured by the end extended surface height measuring unit and a height of the holding surface measured by the wafer upper surface height measuring unit; and a calculation unit that calculates a difference between the height of the upper surface of the wafer measured by the wafer upper surface height measurement unit and the height of the end extended surface at a position apart from the rotation center of the chuck table by a predetermined distance in the end extended surface measured by the end extended surface height measurement unit, subtracts the height difference stored in the storage unit from the difference, calculates the thickness of the wafer held by the chuck table, and terminates grinding when the thickness of the wafer set in advance coincides with the thickness of the wafer calculated by the calculation unit.
The chuck table of the present invention has a narrow width of the upper surface of the ring by forming the hanging surface and the end extension portion on the outer side surface of the annular portion, so that grinding water containing grinding chips is less likely to adhere to the upper surface of the ring. Therefore, grinding water is less likely to enter between the holding surface and the lower surface of the wafer, thereby reducing the possibility of contamination of the lower surface of the wafer. Most of the scattered grinding water collides with the hanging surface of the annular portion, and the grinding water colliding with the hanging surface flows down along the end spreading surface. Therefore, it is possible to prevent grinding chips from being deposited along the outer side surface of the wafer and adhering to the upper surface of the wafer, thereby preventing grinding defects.
In the grinding apparatus of the present invention, even when the height of the ring upper surface cannot be measured by the height measuring means because the width of the ring upper surface is formed narrow, the thickness of the wafer can be measured by measuring the height of the predetermined position of the end extension surface.
Drawings
Fig. 1 is a perspective view showing an example of a grinding apparatus.
Fig. 2 is an exploded perspective view showing an example of the chuck table.
Fig. 3 is a perspective view showing an example of the chuck table.
Fig. 4 is a longitudinal sectional view showing an example of the chuck table.
Fig. 5 is a cross-sectional view showing a state in which the end extension surface height measuring unit measures the height of the end extension surface and the upper wafer surface height measuring unit measures the height of the holding surface.
Fig. 6 is a cross-sectional view showing a state in which the terminal-expanded-surface-height measuring unit measures the height of the terminal expanded surface and the terminal-expanded-surface-height measuring unit measures the height of the holding surface.
Fig. 7 is a sectional view showing a state in which a wafer is ground.
Fig. 8 is a plan view showing the relationship between the wafer and the grinding wheel when the wafer is ground.
Fig. 9 is a cross-sectional view showing another example of a state in which a wafer is ground.
Description of the reference symbols
1: a grinding device; 2: a chuck table; 21: a perforated plate; 211: a holding surface; 212: a lower surface; 22: a base station; 221: an upper surface; 222: a communication path; 223: a recess; 224: an upper surface; 23: an annular portion; 231: hanging down; 232: a terminal expansion surface; 233: an annular vertical surface; 234: an upper surface of the ring; 24: an attraction source; 3: a grinding unit; 31: a main shaft; 32: a housing; 33: a mounting base; 34: grinding the grinding wheel; 341: a base station; 342: grinding the grinding tool; 35: an electric motor; 4: a grinding feed unit; 41: a ball screw; 42: a guide rail; 43: a pulse motor; 44: a lifting part; 45: supporting; 5: a height measuring unit; 51: a terminal extension surface height measuring unit; 52: a wafer upper surface height measuring unit; 61: a calculation unit; 62: a storage unit; w: a wafer; wa: an upper surface; wb: a lower surface.
Detailed Description
The grinding apparatus 1 shown in fig. 1 includes: a chuck table 2 for holding a disk-shaped wafer; a grinding unit 3 for grinding the wafer held by the chuck table 2; and a grinding feed unit 4 that moves the grinding unit 3 in a direction of approaching and a direction of separating with respect to the wafer.
The grinding unit 3 has: a main shaft 31 having a vertical axis; a housing 32 rotatably supporting the main shaft 31; a mounting seat 33 mounted to a lower end of the main shaft 31; a grinding wheel 34 attached to the mounting base 33; a motor 35 that rotates the main shaft 31; and a grinding water inflow portion that causes grinding water to flow into the spindle 31. The grinding wheel 34 has: a base 341 fixed to the mount 33; and a plurality of grinding stones 342 adhered to the lower surface of the base 341 in a ring shape.
The grinding feed unit 4 has: a ball screw 41 having an axis in a direction parallel to the main shaft 31; a pair of guide rails 42 arranged in parallel with the ball screw 41; a pulse motor 43 that rotates the ball screw 41; an elevating unit 44 having a nut screwed to the ball screw 41 therein, and a side portion of the elevating unit 44 being in sliding contact with the guide rail 42; and a lug 45 fixed to the elevating portion 44 and holding the case 32.
The chuck table 2 is movable in a horizontal direction, and the chuck table 2 includes: a disk-shaped porous plate 21 having a holding surface 211 having substantially the same area as that of a wafer to be ground; and a base 22 for supporting the porous plate from below. The holding surface 211 is formed to have substantially the same diameter as the surface of the wafer.
As shown in fig. 2, the base 22 includes: an upper surface 221 for supporting the surface 212 of the porous plate 21 opposite to the holding surface 211; a recess 223 that is one layer down from the upper surface 221; a communication path 222 that opens to the bottom surface of the recess 223; and an annular upper surface 224. An annular portion 23 surrounding the perforated plate 21 supported by the base 22 from the side surface side is formed above and on the inner peripheral side of the upper surface 224.
The ring-shaped portion 23 has a ring upper surface 234 formed annularly on the same horizontal plane as the holding surface 211 of the porous plate 21.
A hanging surface 231 and an expanded end surface 232 are formed on an outer side surface extending downward from the outer peripheral end of the ring upper surface 234, the hanging surface 231 hangs down from the outer peripheral end of the ring upper surface 234, and the expanded end surface 232 increases in diameter from the lower end of the hanging surface 231 toward the upper surface 224 of the base 22. The drop face 231 is formed substantially perpendicular to the ring upper surface 234, but may not be completely perpendicular.
In addition, the hanging surface 231 and the end extension surface 232 may be formed of different materials. The hanging surface 231 may be formed without exposing the outer surface of the porous plate 21. For example, the drooping surface 231 may be formed by applying a resin and hardening it. The end extension surface 232 is formed of a material such as ceramic with the following hardness: the tip spread surface 232 does not sag when the tip spread surface height measuring unit 51 of the contact pin type makes contact in a measurable manner.
The lower end of the vertical surface 231 and the inner peripheral side of the upper surface 224 of the base 22 are connected by an end extension surface 232. In the illustrated example, the end extension surface 232 and the base 22 are connected via a ring-shaped vertical surface 233 perpendicular to the upper surface 224 of the base 22, but the end extension surface 232 and the base 22 may be directly connected without the ring-shaped vertical surface 233. Since the hanging surface 231 and the end expanding surface 232 are formed in the annular portion 23, the width of the ring upper surface 234 becomes extremely small.
In the example of fig. 2, the base 22 and the annular portion 23 are formed integrally, but the base 22 and the annular portion 23 may be formed as separate members and coupled to each other.
As shown in fig. 4, the communication path 222 formed in the base 22 communicates with the suction source 24, and the wafer can be held by causing the holding surface 211 of the porous plate 21 to attract the wafer by the suction force supplied from the suction source 24.
As shown in fig. 1, a height measuring means 5 is disposed on a side of the movement path of the chuck table 2, and the height measuring means 5 includes: a terminal extension surface height measuring unit 51 that measures the height of the terminal extension surface 232 of the chuck table 2; and a wafer upper surface height measuring unit 52 that measures the height of the upper surface of the wafer held by the chuck table 2. The end extension surface height measuring unit 51 and the wafer upper surface height measuring unit 52 are stylus type, and the height is recognized by the position of the stylus when the lower end is in contact with the end extension surface 232 and the upper surface of the wafer. Further, the end spread surface height measuring unit 51 and the wafer upper surface height measuring unit 52 measure the height of the holding surface 211, thereby enabling measurement of the thickness of the wafer held by the holding surface 211.
The tip end extension surface height measuring unit 51 and the wafer upper surface height measuring unit 52 may also be contactless.
(1) Preparation procedure
In the grinding apparatus 1 configured as described above, before grinding of the wafer is started, as shown in fig. 5, the lower end of the extended end surface height measurement means 51 is brought into contact with the extended end surface 232, and the height of the extended end surface 232 is measured. The value of the measured height is transmitted to the calculation unit 61 and stored in the storage unit 62. Here, since the end expanding surface 232 has a width and a height also differs depending on the contact position, the height of the end expanding surface 232 at a position apart from the rotation center of the chuck table 2 by a predetermined distance is measured. The predetermined distance is stored in the storage unit 62 in advance, for example.
Further, the lower end of the wafer upper surface height measuring unit 52 is brought into contact with the holding surface 211, and the height of the holding surface 211 is measured. The value of the measured height is transmitted to the calculation unit 61.
Next, the calculation unit 61 calculates a step 512 between the height of the end extended surface 232 at a position spaced apart from the rotation center of the chuck table 2 by a predetermined distance as measured by the end extended surface height measurement unit 51 and the height of the holding surface 211 as measured by the wafer upper surface height measurement unit 52, and stores the value of the step 512 in the storage unit 62.
As shown in fig. 6, the height of the holding surface 211 may be measured by the end spread surface height measuring means 51. In this case, the calculation unit 61 calculates a difference in height between the height of the end extended surface 232 at a position spaced apart from the rotation center of the chuck table 2 by a predetermined distance as measured by the end extended surface height measurement unit 51 and the height of the holding surface 211 as measured by the end extended surface height measurement unit 51, and stores the value of the difference in height 511 in the storage unit 62.
In addition, the storage unit 62 also stores a value of the final finished thickness of the wafer in advance by an input of the operator.
(2) Grinding process
Next, as shown in fig. 7, the wafer W is held on the chuck table 2. Here, in the example of fig. 7, in order to prevent air from leaking on the holding surface 211 of the porous plate 21, the outer peripheral edge of the wafer W reaches above the ring upper surface 234 because the diameter of the wafer W is formed slightly larger than the diameter of the porous plate 21.
Next, as shown in fig. 8, while the chuck table 2 is rotated in, for example, the B direction and the spindle 31 is rotated in, for example, the a direction, the grinding unit 3 is fed downward by the grinding feed unit 4 shown in fig. 1, and the rotating grinding whetstone 342 is brought into contact with the upper surface Wa of the wafer W to grind. The rotation orbit of the grinding stone 342 passes through the center of the wafer W and contacts a radius portion of the wafer W. The grinding stone enters from the outer peripheral side of the wafer W toward the center.
During grinding of the wafer W, the grinding water flows from the grinding water inflow portion shown in fig. 1, and is discharged downward from the discharge port of the base 341 formed in the grinding wheel 34. Therefore, the grinding water is also scattered in a direction from the outer periphery of the wafer W toward the center by the centrifugal force acting on the grinding wheel 34, and is sprayed to the outer surface Wc of the wafer W. Grinding chips generated by grinding are also contained in the grinding water.
However, since the ring upper surface 234 of the annular portion 23 is formed in a narrow annular shape, grinding water containing grinding chips is less likely to adhere to the ring upper surface 234. In the example shown in fig. 7, in particular, the ring upper surface 234 is covered with the peripheral edge portion of the wafer W, so that the grinding water can be prevented from adhering to the ring upper surface 234. Therefore, the grinding water is less likely to enter between the holding surface 211 and the lower surface Wb of the wafer W, and the possibility of contamination of the lower surface of the wafer W is reduced.
Most of the grinding water collides with the hanging-down surface 231, and the grinding water colliding with the hanging-down surface 231 flows down along the distal end spreading surface 232. Therefore, it is possible to prevent grinding chips from being deposited along the outer side surface Wc of the wafer W and adhering to the upper surface Wa, thereby preventing grinding defects.
In the grinding of the wafer W, as shown in fig. 7, the height of the upper surface Wa of the wafer W is measured by the wafer upper surface height measuring unit 52. The calculation unit 61 calculates a difference 513 between the value of the height of the upper surface Wa of the wafer W measured by the wafer upper surface height measurement unit 52 during grinding and the value stored in the storage unit 62 at a position spaced apart from the rotation center of the chuck table 2 by a predetermined distance in the end extended surface 232 measured by the end extended surface height measurement unit 51, and then subtracts the height difference 512 stored in the storage unit 62 from the calculated difference 513, thereby calculating the thickness of the wafer W held by the chuck table 2. When the thickness of the wafer W calculated by the calculation unit 61 matches the finish thickness previously stored in the storage unit 62, the grinding feed unit 4 raises the grinding unit 3 to finish grinding.
In the preparation step, even when the height of the holding surface 211 is measured by the end extended surface height measuring unit 51 and the difference 511 between the height of the holding surface 211 at a position spaced apart from the rotation center of the chuck table 2 by a predetermined distance in the end extended surface 232 measured by the end extended surface height measuring unit 51 and the height of the end extended surface 232 measured by the end extended surface height measuring unit 51 is stored in the storage unit 62, the difference 513 between the height of the upper surface Wa of the wafer W measured by the wafer upper surface height measuring unit 52 during grinding and the height of the chuck table 2 at a position spaced apart from the rotation center of the chuck table 2 by the predetermined distance R in the end extended surface measured by the end extended surface height measuring unit 51 stored in the storage unit 62 is calculated by the calculating unit 61, and the thickness of the wafer W held by the table 2 is calculated by subtracting the difference 511 stored in the storage unit 62 from the calculated difference 513.
In general, when the thickness of the wafer W is measured, the height of the ring upper surface 234 formed flush with the holding surface 211 and the height of the upper surface Wa of the wafer W are measured in real time during grinding of the wafer W, and the difference is used as the thickness of the wafer W, but in the grinding apparatus 1, the width of the ring upper surface 234 is narrow, and therefore the height of the ring upper surface 234 cannot be measured by the height measuring means 5. However, the thickness of the wafer W can be measured by measuring the height of the predetermined position of the end extension surface 232.
As shown in fig. 9, during grinding of the wafer W, the height of the upper surface Wa of the wafer W may be measured only by the wafer upper surface height measuring means 52 without measuring the height of the predetermined position of the extended end surface 232 by the extended end surface height measuring means 51, and the thickness of the wafer W may be determined using the height of the predetermined position of the extended end surface 232 measured in the preparation step and stored in the storage means 62.
Claims (2)
1. A grinding apparatus having a chuck table for sucking and holding a wafer, which grinds a disk-shaped wafer by supplying grinding water to a grinding wheel,
the chuck table has:
a disk-shaped porous plate having a holding surface having a diameter substantially equal to a surface of the wafer;
a base having an upper surface for supporting a surface on the opposite side of the holding surface, and a communication path for communicating the upper surface with a suction source;
an annular portion surrounding a side surface of the porous plate supported by the base; and
an annular upper surface located below the annular portion and on the outer peripheral side,
the annular portion has:
a ring upper surface which is formed in a ring shape and is flush with the holding surface; and
an outer side surface extending downward from an outer peripheral end of the upper surface of the ring,
the outer side surface is formed by a depending surface and a terminal expansion surface,
the depending face depends from the peripheral end of the upper surface of the ring,
the end extension surface connects a lower end of the vertically lower surface with the annular upper surface of the abutment, and a diameter of the end extension surface increases from the lower end of the vertically lower surface toward the upper surface of the abutment,
the grinding device comprises:
a terminal extension surface height measuring unit that measures a height of the holding surface and a height of the terminal extension surface;
a wafer upper surface height measuring unit that measures a height of an upper surface of the wafer held by the holding surface;
a storage unit that stores a height difference between the height of the holding surface measured by the end extended surface height measuring unit and a height of the end extended surface at a position spaced apart from a rotation center of the chuck table by a predetermined distance measured by the end extended surface height measuring unit; and
a calculation unit that calculates a difference between the height of the upper surface of the wafer measured by the upper surface height measurement unit and the height of the end extended surface at a position apart from the rotation center of the chuck table by a predetermined distance in the end extended surface measured by the end extended surface height measurement unit, subtracts the height difference stored in the storage unit from the difference, and calculates the thickness of the wafer held by the chuck table,
when the thickness of the wafer set in advance is identical to the thickness of the wafer calculated by the calculating unit, grinding is finished.
2. A grinding apparatus having a chuck table for sucking and holding a wafer, which grinds a disk-shaped wafer by supplying grinding water to a grinding whetstone,
the chuck table has:
a disk-shaped porous plate having a holding surface having a diameter substantially equal to a surface of the wafer;
a base having an upper surface for supporting a surface on the opposite side of the holding surface, and a communication path for communicating the upper surface with a suction source;
an annular portion surrounding a side surface of the porous plate supported by the base; and
an annular upper surface located below the annular portion and on the outer peripheral side,
the annular portion has:
a ring upper surface which is the same as the holding surface and is formed in a ring shape; and
an outer side surface extending downward from an outer peripheral end of the upper surface of the ring,
the outer side is formed by a depending face and a terminal spreading face,
the depending face depends from the peripheral end of the upper surface of the ring,
the end extension surface connects a lower end of the suspended surface with the annular upper surface of the base, and the diameter of the end extension surface increases from the lower end of the suspended surface toward the upper surface of the base,
the grinding device comprises:
a terminal extension surface height measuring unit that measures a height of the terminal extension surface;
a wafer upper surface height measuring unit that measures a height of the holding surface and a height of an upper surface of the wafer held by the holding surface;
a storage unit that stores a difference between a height of the end extended surface at a position spaced apart from a rotation center of the chuck table by a predetermined distance in the end extended surface measured by the end extended surface height measuring unit and a height of the holding surface measured by the wafer upper surface height measuring unit; and
a calculation unit that calculates a difference between the height of the upper surface of the wafer measured by the wafer upper surface height measurement unit and the height of the end extended surface at a position apart from the rotation center of the chuck table by a predetermined distance in the end extended surface measured by the end extended surface height measurement unit, subtracts the height difference stored in the storage unit from the difference, and calculates the thickness of the wafer held by the chuck table,
when the thickness of the wafer set in advance is identical to the thickness of the wafer calculated by the calculating unit, grinding is finished.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018076731A JP7075268B2 (en) | 2018-04-12 | 2018-04-12 | Grinding device |
| JP2018-076731 | 2018-04-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110370166A CN110370166A (en) | 2019-10-25 |
| CN110370166B true CN110370166B (en) | 2023-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910279359.XA Active CN110370166B (en) | 2018-04-12 | 2019-04-09 | Chuck table and grinding device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7075268B2 (en) |
| KR (1) | KR20190119527A (en) |
| CN (1) | CN110370166B (en) |
| TW (1) | TWI805732B (en) |
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| JP2003209080A (en) * | 2002-01-11 | 2003-07-25 | Disco Abrasive Syst Ltd | Semiconductor wafer protecting member and grinding method for semiconductor wafer |
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| JP6353684B2 (en) * | 2014-04-04 | 2018-07-04 | 株式会社ディスコ | Grinding wheel and grinding chamber cleaning method |
| JP2018001355A (en) * | 2016-07-05 | 2018-01-11 | 株式会社ディスコ | Method for grinding rectangular work-piece |
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- 2018-04-12 JP JP2018076731A patent/JP7075268B2/en active Active
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- 2019-04-09 CN CN201910279359.XA patent/CN110370166B/en active Active
- 2019-04-09 KR KR1020190041560A patent/KR20190119527A/en active IP Right Grant
- 2019-04-10 TW TW108112496A patent/TWI805732B/en active
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| JPH068087A (en) * | 1992-06-25 | 1994-01-18 | Shin Etsu Handotai Co Ltd | Wafer grinding suction board |
| JP2897207B1 (en) * | 1997-04-04 | 1999-05-31 | 株式会社東京精密 | Polishing equipment |
| JP2003077869A (en) * | 2001-06-18 | 2003-03-14 | Disco Abrasive Syst Ltd | Working method of semiconductor wafer and retaining substrate used for the method |
| JP2012121118A (en) * | 2010-12-10 | 2012-06-28 | Disco Corp | Grinding device |
| CN104620357A (en) * | 2012-08-29 | 2015-05-13 | Cnus株式会社 | Retainer ring structure for chemical-mechanical polishing and method for manufacturing same |
| CN103639875A (en) * | 2013-11-25 | 2014-03-19 | 李东炬 | Universal grinder special for nuclear power bearing outer race machining |
| CN105097637A (en) * | 2014-05-16 | 2015-11-25 | 株式会社迪思科 | Support plate, method of forming same and wafer processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190119527A (en) | 2019-10-22 |
| JP2019181634A (en) | 2019-10-24 |
| JP7075268B2 (en) | 2022-05-25 |
| TWI805732B (en) | 2023-06-21 |
| CN110370166A (en) | 2019-10-25 |
| TW201944527A (en) | 2019-11-16 |
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