CN110351960A - The method of switching device and manufacture switching device - Google Patents

The method of switching device and manufacture switching device Download PDF

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Publication number
CN110351960A
CN110351960A CN201910226336.2A CN201910226336A CN110351960A CN 110351960 A CN110351960 A CN 110351960A CN 201910226336 A CN201910226336 A CN 201910226336A CN 110351960 A CN110351960 A CN 110351960A
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CN
China
Prior art keywords
substrate
attachment device
notch
adhesive
strip conductor
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Granted
Application number
CN201910226336.2A
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Chinese (zh)
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CN110351960B (en
Inventor
海科·恩格尔哈特
斯特凡·赫克斯霍尔德
彼得·施特克莱因
克莱门斯·芬内布施
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Semiconductor Electronics Co Ltd
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Semiconductor Electronics Co Ltd
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Publication of CN110351960B publication Critical patent/CN110351960B/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B32B7/14—Interconnection of layers using interposed adhesives or interposed materials with bonding properties applied in spaced arrangements, e.g. in stripes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206—Insulating
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
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    • H01L2224/06181—On opposite sides of the body
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H05K1/145—Arrangements wherein electric components are disposed between and simultaneously connected to two planar printed circuit boards, e.g. Cordwood modules
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    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2072—Anchoring, i.e. one structure gripping into another
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    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Combinations Of Printed Boards (AREA)
  • Power Conversion In General (AREA)

Abstract

The present invention relates to the methods of switching device and manufacture switching device (1), method includes the following steps: substrate (2) are provided, with the strip conductor (22) of electrically insulated from one another at substrate surface；It provides attachment device (3), wherein attachment device (3) has (300) and the attachment device positioned opposite with (300) on the downside of attachment device upside (340) on the downside of the attachment device towards substrate (2)；At least one full-thickness cuts (100) is constituted in attachment device (3)；Attachment device (3) is arranged on substrate (2)；Adhesive (4) is coated to the full-thickness cuts (100) and substrate contact surface (5), wherein adhesive (4) passes through the notch (100) and contacts with the substrate contact surface (5) of substrate (2), and wherein adhesive (4) at least partly covers cut surface edge (101)；And solidification adhesive (4), so that substrate (2) is adhesively bonded to attachment device (3).

Description

The method of switching device and manufacture switching device
Technical field
The present invention relates to the method for manufacturing switching device, which can constitute power semiconductor modular or function The base unit of rate electronic system, wherein individually or with other and preferably identical base unit combining, the base portion Unit constitutes the base power electronic module of power semiconductor modular or power electronic system.The invention further relates to a kind of switch dresses It sets.
Background technique
From a kind of switching device known to 273 470 A1 of EP3, which has substrate, attachment device and compression dress It sets, wherein the substrate includes the strip conductor of electrically insulated from one another, and the first main surface of power semiconductor component is disposed in On a strip conductor in the strip conductor, and first main surface is connected to the strip conductor in an electrically conductive manner In a strip conductor.The attachment device is configured to the film stack being made of a conductive film and an electric insulating film Layer, and therefore constitute the first main surface and the second main surface.The internal circuit of the switching device is connected by means of attachment device It provides.For this purpose, the contact surface of the second main surface of power semiconductor component is connected in a manner of friction lock and conduction First contact surface of attachment device.The compression set includes pressure main body and pressure elements, which partly leads in power It is protruded on the direction of body component from pressure main body, in the pressure main body, the second main surface of pressure elements compressed film lamination The first section, and therefore, in the projection along the vertical direction of power semiconductor component, first section is by entire cloth It sets in the surface of power semiconductor component.The adhesive disposed layer between pellicular cascade and substrate, the adhesive phase provide The combination of pellicular cascade and substrate connects, without applying pressure by compression set.
Additionally, it is known that 2,015 120 156 A1 of DE10.It carries out the manufacture for the switching device for using press device Description.The press device includes the extrusion die with elastic cushion element, for the first connection mating member to be connect pairing with second Part (that is, substrate and pellicular cascade) material links together in conjunction with sintering.The elastic cushion element of extrusion die by dimensionally stable frame Frame surrounds, the pad element and guide member of extrusion die in the frame of the dimensionally stable by it is linear movably in a manner of be guided, So that the frame of the dimensionally stable has a down dip on the first connection mating member or having a down dip to being wherein disposed with the first connection mating member Workpiece carrier on.After being applied to the first connection mating member, extrusion die drops to the second company together with elastic cushion element It connects on mating member.Necessary pressure is applied to elastic cushion, to connect in conjunction with mating member the first connection mating member with second. However, the connection mating member must be positioned and fixed before sintering process.
In the manufacture of the switching device of this type, technically it is desirable that, attachment device should be attached in a reliable fashion It is connected to substrate.
Summary of the invention
In the case where understanding above situation, the object of the present invention is to provide the reliable methods and this type for manufacturing switching device Switching device.
The purpose is realized by the method with feature of the invention and the switching device with feature of the invention.? Further advantageous measures are listed in embodiment, embodiment can be combined with each other as needed, to realize further advantage.
According to the present invention, a kind of method for manufacturing switching device is provided, this method has follow steps:
The substrate with the strip conductor of electrically insulated from one another is provided, wherein at least one of strip conductor conduction Power semiconductor component is arranged on track, and wherein, which has on the upside of power semiconductor and power On the downside of semiconductor, it is wherein connected to strip conductor in an electrically conductive manner on the downside of the power semiconductor, and
Attachment device is provided, wherein the attachment device is configured to have at least one first conductive film and be electrically insulated thin The pellicular cascade of film, wherein the attachment device has the attachment device downside towards substrate and the opposite cloth with attachment device downside On the upside of the attachment device set, and wherein the attachment device includes the notch of through thickness, so that the notch is from attachment device Side is extended continuously on the downside of attachment device, and wherein notch includes the cut surface edge on attachment device upside, and
Attachment device is arranged on substrate and is applied adhesive to full-thickness cuts and substrate contact surface, Middle adhesive passes through notch and contacts with the substrate contact surface of substrate, and wherein adhesive at least partly covers cut surface Edge, and
Solidification adhesive.
Adhesive is cured, so that substrate is adhesively attached to attachment device in such a way that material combines and shape cooperates.
Substrate contact surface should be understood the surface of substrate contacted intentionally by notch with adhesive formation.If base Plate contact surface is configured to recess portion, then the term is therefore, it is intended that define the surface of recess portion.The surface can also comprise week Boundary.In a substrate, which can include a certain proportion of strip conductor and a certain proportion of insulating body.
Attachment device is preferably configured to stacks of thin films, preferably by the first conductive film and the second conductive film structure At being disposed with insulation film between first conductive film and the second conductive film.Conductive film advantageously quilt itself It is configured to constitute further strip conductor.In order to constitute stacks of thin films, material combination can be set between the film Connection.
By means of welding, adhesive or sintering connection, power semiconductor component is upper to rub on the downside of its power semiconductor The mode that locking or material combine is electrically bonded to a strip conductor in strip conductor.
By means of the present invention, connection two of the attachment device in conjunction with connection and material that the shape of substrate cooperates is provided Person.The above-mentioned at least partly covering at cut surface edge leads to the mechanical interlocked of two connection mating members, thus provides shape The connection of cooperation.The connection of shape cooperation is specifically to be configured on direction in a direction perpendicular to the substrate.Adhesive bond constituent material In conjunction with connection.The connection of the connection combined by means of material and shape cooperation, is provided for fixing substrate and reliably attached It is connected to the simple option of attachment device, to allow the subsequent sintering or welded connecting of such as substrate and attachment device, and nothing The risk that substrate and attachment device mutually rotate before the connection.It is accordingly possible to ensure the conduction on attachment device and substrate The subsequent internal circuit connection of track.
The secure attachment of the present invention permission attachment device and substrate.By omitting the tool elements for being attached substrate, root It is suitable for automating according to method of the invention, and can be performed quickly.Compared with prior art, the present invention minimizes failure The risk of device or unqualified switching device.
Preferably, cut surface edge is completely covered in adhesive.Especially preferably, cutting shoulder is completely covered in adhesive Edge region.This connection for causing the particularly effective interlocking of substrate and attachment device or shape to cooperate.
In preferable configuration, this method include for by the downside of attachment device with substrate surface and/or power semiconductor table Plane materiel material combines the further step to link together.It is alternatively that this method includes for will be on the downside of attachment device and substrate Surface and/or the combined further step of power semiconductor surface pressing.
In preferred further construction, applies adhesive to full-thickness cuts and at least includes the following steps:
Gluer nozzle is provided；
The gluer nozzle is used, by applying adhesive for attachment device and substrate adhesive bond；
By means of solidification equipment (especially light curring unit) solidification adhesive.
Using gluer nozzle, adhesive is applied to notch and passes through notch and is applied in substrate contact surface.This The orientation of adhesive is allowed to introduce and apply.It is therefore prevented that gathering excessive adhesive between attachment device and substrate.This Afterwards, adhesive is hardened, that is, is hardened particular by solidification.Specifically, adhesive is UV solidification/visible-light curing Composite adhesives, such as epobond epoxyn.Solidification can be executed by means of light curring unit.
In preferable configuration, notch is formed by cutting draught machine or laser cutting device.Except laser cutting device and cut It cuts except draught machine, the other method including the cutting of such as water jet or punching press can be used to form notch.
It may further be preferable that at least one described notch constructs in attachment device with being centered.This is filled in small connection It is particularly advantageous in the case where setting with small substrate.
In preferable configuration, at least two notch are constructed.In the further preferred form of embodiment, attachment device is by structure Corner areas is made, wherein at least two notch is arranged or is built into the corner areas.If described at least two A notch is arranged that then this is proved to be particularly advantageous in diagonal opposite mode.It is arranged by this, it is therefore prevented that attachment device Any possible displacement or rotation between substrate.
In further preferred construction, substrate includes recess portion.Therefore, substrate contact surface is configured to the recess portion in substrate Defining surface.Recess portion can be configured to hole.At least one strip conductor that the hole can pass through in strip conductor extends to absolutely Edge main body.The hole can be configured to etch-hole.It is alternately or in addition, such as in strip conductor a strip conductor In existing recess portion can be used as hole.Recess portion expands adhesive bond surface, and therefore improves the bonding of adhesive bond Power.
Recess portion is formed preferably by etching.This constitutes the straightforward procedure for forming such recess portion.Mesh thus , it can be using etching solution.In addition, paint can be used as etching mask.The use of wet etching or dry ecthing is possible. Also it is contemplated that other methods, such as laser ablation.
In preferable configuration, substrate includes nonconducting insulating body, and strip conductor is applied to nonconducting insulation master Body, wherein corresponding recess portion, which passes through corresponding strip conductor, extends to insulating body.Recess portion (the correlation i.e. in substrate contact surface Increase) generate particularly effective adhesive bond.
The further object of the present invention is a kind of switching device, which has substrate, which has mutually electricity The strip conductor of insulation, wherein power semiconductor component is arranged at least one strip conductor in the strip conductor, And wherein the power semiconductor component has on the upside of power semiconductor and on the downside of power semiconductor, wherein under the power semiconductor Side is connected to strip conductor in an electrically conductive manner, and the switching device has attachment device, and wherein the attachment device is constructed For the pellicular cascade at least one the first conductive film and electric insulating film, wherein the attachment device has towards substrate On the downside of attachment device and on the upside of attachment device positioned opposite on the downside of the attachment device, wherein the attachment device includes through thickness Notch, so that the notch is extended continuously on the downside of attachment device on the upside of attachment device, wherein notch includes to be in connection Cut surface edge on the upside of device, wherein the attachment device is disposed on substrate and wherein adhesive is applied to entirely Thickness notch and substrate contact surface, wherein adhesive passes through notch and contacts with the substrate contact surface of substrate, wherein adhesive Cut surface edge is at least partly covered, and wherein adhesive is cured.
Adhesive is cured, so that substrate is in such a way that material combines and shape cooperates by adhesive attachment to attachment device.
Therefore, switching device includes connection both of the attachment device in conjunction with connection and material that the shape of substrate cooperates. Therefore, attachment device is adhesively attached to substrate in such a way that material combines and shape cooperates.The switching device of this type The advantages of further advantage is corresponded essentially to according to the method for the present invention, and therefore will not be repeated again herein.
If substrate includes recess portion, and the substrate contact surface is configured to define the surface of the recess portion in substrate, then This has further been proved to be advantageous.In preferable configuration, substrate includes nonconducting insulating body, and strip conductor is applied It is added to nonconducting insulating body, wherein corresponding recess portion, which passes through corresponding strip conductor, extends to insulating body.
In preferred construction, the circumference on the surface being made of the recess portion in substrate is configured with tank shape in vertical direction Or taper, or expand perpendicular to substrate until the insulating body along the direction of substrate.Tank shape is also understood as convex tank shape.Cause This, circumference expands the middle line until tank shape, and hereafter reduces again.(wherein recess configuration has until insulating body cone cell Enlarged portion) it is also possible.It is constructed by this, recess portion constitutes undercut portions.By means of the undercut portions, adhesive will be hindered from substrate It is any unintentionally separate and/or discharge.It thus provides the improved combination of attachment device and substrate.
Preferably, adhesive is upper on the upside of attachment device constitutes adhesive seam (bead).The adhesive be sewn on here by It is interpreted as a kind of pingbian, fully cover cut surface edge and extends to notching edge region.This means that connection dress The open space for setting the recess portion on upside is significantly filled with adhesive in the level height of recess portion above and over.Therefore, it bonds Agent constitutes the form of the adhesive seam including adhesive seam.This leads to abnormal effective interlocking, that is, attachment device and substrate The connection of shape cooperation.
In preferable configuration, at least two notch are constructed.In the further preferred form of embodiment, attachment device construction There is corner areas, wherein at least two notch is arranged or is built into the corner areas.If described at least two Notch is arranged that then this has proven to advantageous in diagonal opposite mode.
In embodiment preferred form, the diameter of notch is less than 5mm, especially less than 3mm, and is greater than 0.5mm.So And the size is not applied in a restricted way.
Specifically, switching device is manufactured by the above method.
Detailed description of the invention
With reference to attached drawing, further characteristics and advantages of the invention are illustrated to generate by following.In the accompanying drawings, it is schematically:
Fig. 1 shows in cross section the first construction of switching device according to the present invention；And
Fig. 2 shows the first construction of switching device according to the present invention to overlook；And
Fig. 3 shows the second construction of switching device according to the present invention to overlook；And
Fig. 4 shows schematic diagram according to the method for the present invention；And
Fig. 5 shows in cross section the third construction of switching device according to the present invention；And
Fig. 6 shows the detailed view of the 4th construction of switching device according to the present invention.
Specific embodiment
Although illustrating and describing the present invention in more detail by reference to preferred exemplary embodiment, the present invention is not It is limited by disclosed example.Without departing from it is of the invention as appended patent claims limit protection scope the case where Under, those skilled in the art can be inferred that variant of the invention.
Fig. 1 shows in cross section the first construction of switching device 1 according to the present invention.The device includes having substrate table The substrate 2 in face, wherein a part on the surface is configured to strip conductor 22.Substrate 2 further comprises as base element Nonconducting insulating body 20, the strip conductor 22 of electrically insulated from one another is applied on insulating body 20.
The strip conductor 22 of electrically insulated from one another can not only carry different potentials (specifically loading potential), but also Auxiliary potential (specifically switch and instrument potential) can be carried.
At least one power semiconductor component 7, at least one described power semiconductor portion are arranged on strip conductor 22 Part 7 can be configured to such as MOSFET or IGBT.At least one described power semiconductor component 7 has on the upside of power semiconductor 72 and opposite power semiconductor on the downside of 70, wherein on the downside of power semiconductor 70 by means of the first sintering connection 84 with conductive side Formula is integrated to strip conductor 22 by material.
For the purpose of internal circuit connection, switching device 1 includes attachment device 3, and attachment device 3 is configured to film stack Layer.The pellicular cascade is made of two conductive films 30 and 34, wherein being disposed between described two conductive films 30 and 34 Insulation film 32.Film 30,32,34 is preferably connected with each other in such a way that material combines.Attachment device 3 towards substrate 2 Surface is constituted 300 on the downside of attachment device.Substrate 2 further comprises attachment device upside 340 and company 340 on the upside of attachment device 300 is positioned opposite on the downside of connection device.
72 are integrated to film 34 by material in an electrically conductive way by means of the second sintering connection 85 on the upside of power semiconductor.
Attachment device 3 can be made of the pellicular cascade with conductive film 34 and insulation film 32.It is other construction be also It is possible.
Two conductive films 30,34 of attachment device 3 are configured to constitute the electrically insulated from one another in film 30,34 in itself Strip conductor.These strip conductors in film 30,34 are specifically by the power of at least one power semiconductor component 7 72 are connected to one or more strip conductors 22 on substrate 2 on the upside of semiconductor.In various power semiconductor components 7 and substrate 2 On various strip conductors 22 between can also constitute equivalent connection.
For the purpose of external electrical application, electronic switching device 1 can include face terminals element and auxiliary terminal member Part (is not expressly shown) in figure.Only by means of example, these face terminals elements, which are configured to metal mold product, (not to be indicated Out), the contact pin of the metal mold product is beneficial to help sintering connection and is integrated to the strip conductor 22 on substrate 2 by material In at least one strip conductor.It is alternatively, in addition, these face terminals elements can be configured to contact bullet Spring.
In principle, element of attachment device 3 itself can be configured to face terminals element or auxiliary terminal element, example Such as, door or sensor terminal (not showing) are configured to.Attachment device 3 can be comprising (not showing) for passing through First conductive film 34 is electrically connected to the conductive through-contacts of the second conductive film 30 by insulation film 32.Therefore, it can constitute Complicated electrical connection topological structure.
In order to which the subsequent material realized between attachment device 3 and substrate 2 combines connection or friction lock connection, first will Attachment device 3 is located on strip conductor 22.In the situation that material combines connection, it is preliminarily, by solder layer or sinterable Sintered paste be coated to 300 on the downside of strip conductor 22 and power semiconductor component 7 or attachment device, at these points, will constitute Material combines connection.It is alternatively that material can also be configured to solder joints in conjunction with connection.
Attachment device 3 is positioned such that strip conductor 22 and at least one described power semiconductor component 7 can led It is attached in circuit.Hereafter, the attachment device 3 therefore positioned is attached to substrate 2.
In order to which attachment device 3 is attached to substrate 2, before positioning and being attached attachment device 3, make to wrap in attachment device 3 Containing notch 100.Notch 100 extends continuously to 300 on the downside of attachment device from the upside of attachment device 340.By notch 100, Cut surface edge 101 is constituted on 340 on the upside of attachment device.
Notch 100 can specifically be configured to hole.Notch 100 is preferably with the diameter less than 5mm.Specifically, Notch 100 is less than 3mm and is greater than 0.5mm.Notch 100 can be by cutting draught machine or by means of laser cutting device come shape At.It is also possible for being used to form other methods of notch.
In notch 100, for the purpose of attachment, the adhesive 4 being preferably electrically insulated is applied, preferably photocuring bonds The composite adhesives of agent, specifically UV solidification/visible-light curing, such as epobond epoxyn.Adhesive 4 contacts substrate 2 Substrate surface, more specifically contact strip conductor 22.In this contact area, thus constitute substrate contact surface 5 (here with The expression of thickening is shown).Therefore, substrate 2 is adhesively bonded to attachment device 3.Apply adhesive 4 so that adhesive 4 to Partially, but especially cut surface edge 101 is completely covered.Specifically, adhesive 4 is applied to notching edge region 102 (Fig. 2, Fig. 3).This means that level height of the open space of the recess portion 100 on 340 on the upside of attachment device in notch 100 It is significantly filled with adhesive 4 above and over.Therefore, adhesive 4 constitutes the form of the adhesive seam including adhesive seam 6.
Hereafter, adhesive 4 is at least hardened, and is specifically to solidify.Hardening and specifically cured adhesive 4 in base Interlocking adhesive bond is formed between plate 2 and attachment device 3.
During sintering process, which is attached to substrate 2 for attachment device 3.Specifically, except adhesive bond it Outside, adhesive seam 6 further executes the connection or mechanical interlocked function of shape cooperation.The connection of shape cooperation is specifically vertical It is constituted on the N of direction.
Fig. 2 shows the first possible coatings of the adhesive 4 (Fig. 1) in recess portion 100 (Fig. 1).In this case, it bonds Agent seam 6 and notch 100 (Fig. 1) are substantially centrally disposed in attachment device 3.For example, this is for attached by small attachment device 3 It may be enough for being connected to substrate 2 (Fig. 1).Adhesive seam 6 can be configured to another form.By covering notching edge area Cut surface edge 101 in domain 102, adhesive bond form particularly effective shape between attachment device 3 and substrate 2 (Fig. 1) The connection of shape cooperation.
Fig. 3 shows the second possible coating of adhesive 4 (Fig. 1).In this case, two notch 100 (figure is provided 1).These notch are built into the respective edges region or corner areas of attachment device 3, and these notch are with diagonal opposite Mode arrange.By the arrangement, the possibility generated by the effect of the torque between attachment device 3 and substrate 2 is minimized Rotation or possible displacement.Therefore, the risk of failed equipment or unqualified device is minimized.
Fig. 4 shows the method for adhesive 4 to be coated to notch 100 (Fig. 1), wherein attachment device 3 (Fig. 1) and base Plate 2 (Fig. 1) is mutually located in advance.
In first step S1, gluer nozzle (it can be configured to such as injection valve) filling (figure of adhesive 4 is given 1)。
In second step S2, material dosage is executed, that is, the adhesive 4 (Fig. 1) of the dosage through measuring is introduced into notch 100 (Fig. 1) and by the adhesive of the dosage through measuring 4 pass through notch 100 be coated to substrate contact surface 5 (Fig. 1).The orientation Dosage, which prevents, following may have the phenomenon that undesirable effect: 340 on the downside of strip conductor 22 (Fig. 1) and attachment device (Fig. 1) layer of adhesive 4 or excessive 4 layers of adhesive are formed between (Fig. 1).
Hereafter, in step s3, in the situation of Photocurable adhesive 4 (Fig. 1), by the irradiation for carrying out self-corresponding light source Solidification process is activated, so that adhesive 4 (Fig. 1) hardens.At the end of hardening process, adhesive 4 (Fig. 1) is cured.
Adhesive 4 (Fig. 1) solidifies in specific time interval, which can be as short as several seconds.This allow that Rapid curing, and therefore allow for higher processing speed.It is applied directly to by the way that adhesive 4 (Fig. 1) is passed through notch 100 Substrate contact surface 5 (Fig. 1) is possible for attachment device 3 (Fig. 1) to be attached to the automation of the method for substrate 2 (Fig. 1) 's.
Fig. 5 shows the possible form of other third of the embodiment of the present invention.Substrate contact surface 5 be configured to by The surface that hole is defined.At least one strip conductor 22 that the hole passes through in strip conductor 22 extends to insulating body 20.The hole energy Enough it is configured to etch-hole.It is alternately or in addition the existing recess portion in strip conductor 22 a strip conductor 22 It can be used as hole.Hole expands adhesive bond surface, to improve the bonding force of adhesive bond.The open space of notch 100 Filled with adhesive material, until the level height of cut surface edge 101 above and over.
In all exemplary embodiments, notch 100 can be configured to round hole.The diameter of notch 100 is less than 5mm, Particular less than 3mm, and especially from 0.5mm to 3mm.Insulating body 20 can be configured to ceramic layer.
Fig. 6 shows the detailed figure of further 4th construction of the invention.In this case, by the recess portion in substrate 2 The circumference (on the direction N vertical with substrate 2) on the surface of composition is configured to tank shape.Tank shape also should be understood convex tank Shape.Therefore circumference expands the middle line until tank shape, and hereafter reduce again.Substrate contact surface 5 is extended, as a result, is realized The material improved combines connection.It is constructed by this, recess portion constitutes undercut portions.By means of the undercut portions, hinder adhesive 4 from Any of substrate 2 unintentionally separates and/or discharges.It thus provides the combination of attachment device 3 and substrate 2 further changes Into.
It should be noted here that be naturally, if the feature is not mutually exclusive, then various examples of the invention The feature of property embodiment can be combined with each other as needed.

Claims (16)

1. method of the one kind for manufacturing switching device (1), the described method comprises the following steps:
The substrate (2) with the strip conductor (22) of electrically insulated from one another is provided, wherein in the strip conductor (22) at least Power semiconductor component (7) are arranged on one strip conductor (22), and wherein, the power semiconductor component (7) has On the upside of power semiconductor on the downside of (72) and power semiconductor (70), wherein power semiconductor downside (70) in an electrically conductive manner by It is connected to strip conductor (22), and
It provides attachment device (3), wherein the attachment device (3) is configured to have at least one first conductive film (34) With the pellicular cascade of electric insulating film (32), wherein the attachment device (3) have the attachment device towards the substrate (2) under On the upside of side (300) and the attachment device positioned opposite with (300) on the downside of the attachment device (340), and the wherein connection Device (3) includes the notch (100) of through thickness, so that the notch (100) continuously prolongs from (340) on the upside of the attachment device It stretches on the downside of the attachment device (300), wherein the notch (100) includes on the attachment device upside (340) Cut surface edge (101), and
The attachment device (3) is arranged on the substrate (2) and adhesive (4) is coated to cutting for the through thickness Mouth (100) and substrate contact surface (5), wherein described adhesive (4) passes through the institute of the notch (100) and the substrate (2) Substrate contact surface (5) contact is stated, and wherein described adhesive (4) at least partly covers the cut surface edge (101), and
Solidify described adhesive (4).
2. the manufacturing method according to claim 1, which is characterized in that described adhesive (4) fully covers the notch Marginal surface (101).
3. manufacturing method according to one of the preceding claims, which is characterized in that the method includes below into one It is step by step rapid:
By (300) material on the downside of the attachment device in conjunction with being connected on the upside of the substrate surface and/or the power semiconductor (72), particular by sintering or welding.
4. manufacturing method described in one according to claim 1 or in 2, which is characterized in that the method includes below into one It is step by step rapid:
(300) are in conjunction with (72) pressure on the upside of the substrate surface and/or the power semiconductor on the downside of the attachment device Together.
5. method described in one according to claim 1 or in 2, which is characterized in that at least one described notch (100) is occupied It is constructed in the attachment device (3) middlely.
6. method described in one according to claim 1 or in 2, which is characterized in that construction at least two notch (100).
7. according to the method described in claim 6, it is characterized in that, the attachment device (3) is configured with corner areas, and institute It states at least two notch (100) to be built into the corner areas, and at least two notch (100) is with diagonal opposite Mode be arranged.
8. method described in one according to claim 1 or in 2, which is characterized in that the substrate (2) includes recess portion, and The substrate contact surface (5) is configured to define the surface of the recess portion in the substrate (2).
9. according to the method described in claim 8, it is characterized in that, the substrate (2) includes nonconducting insulating body (20), The strip conductor (22) is applied to nonconducting insulating body (20), wherein the corresponding recess portion passes through accordingly Strip conductor (22) extends to the insulating body (20).
10. a kind of switching device (1), the switching device (1) is included
Substrate (2), the substrate (2) has the strip conductor (22) of electrically insulated from one another, wherein in the strip conductor (22) At least one strip conductor (22) on arrange power semiconductor component (7), and the wherein power semiconductor component (7) On the downside of (72) on the upside of power semiconductor and power semiconductor (70), wherein (70) are on the downside of the power semiconductor with conduction side Formula is connected to strip conductor (22), and has attachment device (3), wherein the attachment device (3) is configured to have extremely The pellicular cascade of few first conductive film (34) and electric insulating film (32), wherein the attachment device has towards described (300) and the attachment device upside positioned opposite with (300) on the downside of the attachment device on the downside of the attachment device of substrate (2) (340), wherein the attachment device (3) includes the notch (100) of through thickness, so that the notch (100) is filled from the connection It sets upside (340) continuously to extend up on the downside of the attachment device (300), wherein the notch (100) is included in the company Cut surface edge (101) on the upside of connection device on (340), wherein the attachment device (3) is disposed on the substrate (2) And wherein adhesive (4) is applied to the notch (100) and substrate contact surface (5) of the through thickness, wherein the bonding Agent (4) passes through the notch (100) and contacts with the substrate contact surface (5) of the substrate (2), wherein described adhesive (4) the cut surface edge (101) is at least partly covered, and wherein described adhesive (4) is cured.
11. switching device (1) according to claim 10, which is characterized in that the substrate (2) includes recess portion, and institute Substrate contact surface (5) is stated to be configured to define the surface of the recess portion in the substrate (2).
12. switching device (1) according to claim 11, which is characterized in that the substrate (2) includes nonconducting insulation Main body (20), the strip conductor (22) are applied to nonconducting insulating body (20), wherein the corresponding recess portion The insulating body (20) are extended to across corresponding strip conductor (22).
13. switching device (1) described in one in 1 or 12 according to claim 1, which is characterized in that by the substrate (2) The circumference on the surface that constitutes of the recess portion be configured with the tank shape on vertical direction (N), or in the substrate (2) It is dilated in vertical direction (N) until the insulating body (20) along the direction of the substrate (2).
14. switching device (1) described in one in 0 to 12 according to claim 1, which is characterized in that described adhesive (4) exists Adhesive seam (6) is constituted on the upside of the attachment device on (340).
15. switching device (1) described in one in 0 to 12 according to claim 1, which is characterized in that construction at least two is cut Mouth (100).
16. switching device (1) according to claim 15, which is characterized in that the attachment device (3) is configured with corner region Domain, and at least two notch (100) is built into the corner areas.
CN201910226336.2A 2018-04-03 2019-03-25 Switching device and method for producing a switching device Active CN110351960B (en)

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