CN110346702A - Self-heating effect tests structure and method - Google Patents
Self-heating effect tests structure and method Download PDFInfo
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- CN110346702A CN110346702A CN201910508070.0A CN201910508070A CN110346702A CN 110346702 A CN110346702 A CN 110346702A CN 201910508070 A CN201910508070 A CN 201910508070A CN 110346702 A CN110346702 A CN 110346702A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses a kind of self-heating effects to test structure, which includes: the first device under test (1), the second device under test (2), third device under test (3), first sensor (4), second sensor (5)；First device under test (1) and second device under test (2) relative to first sensor (4) in mirror-image arrangement, second device under test (2) and the third device under test (3) relative to second sensor (5) in mirror-image arrangement.The present invention has the advantages that this structure considerably reduces the thermal diffusion between self-heating device and senser element, so that the temperature condition that senser element has is closer to self-heating device.The self-heating situation of self-heating device source and drain terminal can be measured simultaneously, can more directly reflect source and drain temperature difference.Structure utilizes the sensibility of gate tunneling current vs. temperature, more rapidly and accurately obtains the information of measured device, reduces time and the cost of information collection.
Description
Technical field
The present invention relates to semiconductor device reliability testing field, a kind of self-heating effect test structure and side are specifically disclosed
Method.
Background technique
It is improved recently as MOS (field effect transistor) integrated circuit integrated level, the continuous diminution of device feature size,
Highly integrated chip internal power consumption increases, and temperature rise phenomenon caused by device inside heat production is more severe, especially when device enters
Nano-scale, self-heating effect become an important factor for restricting MOSFETs device development.Therefore how to realize to device more
The detection of accurate and reliable self-heating effect, for Nano-MOS transistors, the design and research for testing structure just seem to pass
It is important.
Currently, it is varied for the characterization method of self-heating effect test, it is broadly divided into electrical characterization method and optical characterisation
Method obtains temperature information indirectly by detecting different electricity or optical signalling.And electrical characterization can be divided into: exchange
Characterization, pulse signal characterization, four end gate resistances characterization, metal wire resistance characterization and adjacent transistors or diode characterization
Method etc..
In terms of MOSFETs self-heating effect tests structural research, above-mentioned neighbouring brilliant pole pipe or diode characterization technique, often
Detection method is sub-threshold slope, threshold voltage, off-state current or the pn-junction by test neighboring diode or transistor
Forward and reverse saturation current obtains the electric property and self-heating effect of the transistor of self-heating.But this way problems faced
It is that significant portion heat will necessarily be lost during the heat transfer to neighboring diode of self-heating transistor.In addition, existing
The heat dissipation path of the devices such as generation three-dimensional MOS device such as FinFET is more, is detected by the method that thermal diffusion influences adjacent transistors
To electrical data compared to truthful data, there are relatively large deviations.Therefore, existing characterizing method is general in terms of self-heating effect characterization
Store-through poor reliability, measurement accuracy is low, error is big, source can not be measured simultaneously and the hot situation of drain terminal and test structure it is cumbersome
Disadvantage.
Summary of the invention
The purpose of the present invention is what is be achieved through the following technical solutions.
The present invention passes through scanning sensor part grid using the leakage current and the stronger dependence of temperature of MIS capacitance structure
The temperature change of electric current reflection both ends device under test.MIS creepage detection method used by test structure of the invention can be with
The source and drain terminal self-heating temperature of device under test are measured simultaneously, and sensing testing result is made to be more nearly the practical self-heating of device under test
Temperature.
According to the first aspect of the invention, a kind of self-heating effect test structure is provided, which includes: first to be measured
Device (1), the second device under test (2), third device under test (3), first sensor (4), second sensor (5)；Described first
Device under test (1) and second device under test (2) are in mirror-image arrangement, second device to be measured relative to first sensor (4)
Part (2) and the third device under test (3) are in mirror-image arrangement relative to second sensor (5).
Preferably, first device under test (1) includes first end (6), second end (7), third end (8), and described second
Device under test (2) includes first end (10), second end (9), third end (11), and the third device under test (3) includes first end
(12), second end (13), third end (14).
Preferably, pass through the first end (6) and the second device under test (2) of metal interconnecting wires interconnection the first device under test (1)
First end (10), pass through the second end (7) and the second device under test (2) of metal interconnecting wires interconnection the first device under test (1)
Second end (9) passes through the third end (8) of metal interconnecting wires interconnection the first device under test (1) and the third of the second device under test (2)
It holds (11)；
By metal interconnecting wires interconnection the second device under test (2) first end (10) and third device under test (3) first
It holds (12), passes through the second end (9) of metal interconnecting wires interconnection the second device under test (2) and the second end of third device under test (3)
(13), pass through the third end (11) of metal interconnecting wires interconnection the second device under test (2) and the third end of third device under test (3)
(14)。
Preferably, the first end (10) of the first end (6) of the first device under test (1) and the second device under test (2) relative to
Sensor (4) is in mirror-image arrangement；Second end (9) phase of the second end (7) of first device under test (1) and the second device under test (2)
It is in mirror-image arrangement for sensor (4)；The first end (10) of second device under test (2) and the first end of third device under test (3)
It (12) is in mirror-image arrangement relative to sensor (5)；The of the second end (9) of second device under test (2) and third device under test (3)
Two ends (13) are in mirror-image arrangement relative to sensor (5).
Preferably, the first device under test (1), the second device under test (2), third device under test (3) are all made of self-heating MOS device
Part.
Preferably, the first end (6) of first device under test (1) is source electrode, second end (7) is drain electrode, third end (8)
For grid；The first end (10) of second device under test (2) is source electrode, second end (9) is drain electrode, third end (11) are grid
Pole；The first end (12) of the third device under test (3) is source electrode, second end (13) is drain electrode, third end (14) are grid.
Preferably, the first end (6) of first device under test (1) is drain electrode, second end (7) is source electrode, third end (8)
For grid；The first end (10) of second device under test (2) is drain electrode, second end (9) is source electrode, third end (11) are grid
Pole；The first end (12) of the third device under test (3) is drain electrode, second end (13) is source electrode, third end (14) are grid.
Preferably, which can be used for two-dimensional surface device or three-dimension device.
Preferably, the first sensor (4) is identical with the second sensor (5) structure, includes Metal gate layer
(15)、SiO2Insulating layer (16) and body silicon layer (17).
According to the second aspect of the invention, a kind of self-heating effect test method is additionally provided, above-mentioned structure, institute are used
The method of stating includes the following steps: to close device under test, preset sensor gate voltage, calibration sensor；Two sensings are extracted respectively
The corresponding grid current of device and temperature curve；Three device under test are opened, maintain two sensor gate voltages constant, self-heating is extremely
Stable state, while measuring two sensor gate electric currents；According to the corresponding grid electricity of each sensor gate electric current of measurement
Stream and temperature curve, determine the temperature of device under test source electrode and drain electrode.
The present invention provides a kind of self-heating effect test structure and method, which includes: the first device under test (1), the
Two device under test (2), third device under test (3), first sensor (4), second sensor (5)；First device under test (1)
It relative to first sensor (4) is in mirror-image arrangement, second device under test (2) and described with second device under test (2)
Third device under test (3) is in mirror-image arrangement relative to second sensor (5).This structure considerably reduces self-heating device and sensing
Thermal diffusion between device, so that the temperature condition that senser element has is closer to self-heating device.It can measure simultaneously certainly
The self-heating situation of thermal device source and drain terminal can more directly reflect source and drain temperature difference.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
Attached drawing 1 shows the cross-sectional view of the self-heating effect test structure of embodiment according to the present invention.
Attached drawing 2 shows the cross-sectional view of the senser element structure of embodiment according to the present invention.
Attached drawing 3 shows the domain structure schematic diagram of the self-heating effect test structure of embodiment according to the present invention.
Attached drawing 4 shows the self-heating effect test method flow chart of embodiment according to the present invention.
Attached drawing 5 shows the grid current characteristic schematic diagram of device at a temperature of the varying environment that measurement obtains.
Attached drawing 6 shows the relation schematic diagram of electric current and temperature under given gate bias voltage (Vg=1V).
Specific embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although showing this public affairs in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.It is to be able to thoroughly understand the disclosure on the contrary, providing these embodiments, and can be by this public affairs
The range opened is fully disclosed to those skilled in the art.
The present invention devises the secondary image device architecture built in a manner of parallel circuit, by extracting source respectively
The self-heating situation of the grid current perception device of senser element and drain terminal senser element.The structure can delicately reaction member temperature
Degree variation, and be applicable in the self-heating effect detection of a plurality of types of MOSFETs devices, it is accurate to promote self-heating effect detection
The function of source and drain terminal self-heating situation is realized while being extracted to degree.Also, device self-heating effect can also be effectively reduced in the structure
Bring experimental error when measurement reflects the temperature rise situation of self-heating device, improves the efficiency and accuracy of detection.
As shown in Figure 1, for a kind of self-heating effect test structure chart, the structure include: the first device under test (1), second to
Survey device (2), third device under test (3), first sensor (4), second sensor (5)；First device under test (1) and institute
The second device under test (2) is stated relative to first sensor (4) in mirror-image arrangement, second device under test (2) and the third
Device under test (3) is in mirror-image arrangement relative to second sensor (5).Wherein, first device under test (1) includes first end
(6), second end (7), third end (8), second device under test (2) include first end (10), second end (9), third end
(11), the third device under test (3) includes first end (12), second end (13), third end (14).
The first end (6) of first device under test (1) and the first end (10) of the second device under test (2) are relative to sensor
It (4) is in mirror-image arrangement；The second end (7) of first device under test (1) and the second end (9) of the second device under test (2) are relative to biography
Sensor (4) is in mirror-image arrangement；First end (12) phase of the first end (10) of second device under test (2) and third device under test (3)
It is in mirror-image arrangement for sensor (5)；The second end (9) of second device under test (2) and the second end of third device under test (3)
It (13) is in mirror-image arrangement relative to sensor (5).
Preferably, the first device under test (1), the second device under test (2), third device under test (3) are all made of self-heating MOS device
Part；The first end (6) of first device under test (1) is source electrode, second end (7) is drain electrode, third end (8) are grid.With this
Corresponding, the first end (10) of second device under test (2) is source electrode, second end (9) is drain electrode, third end (11) are grid
Pole.Correspondingly, the first end (12) of the third device under test (3) is source electrode, second end (13) is drain electrode, third end
It (14) is grid.
Alternatively, the first end (6) of first device under test (1) is drain electrode, second end (7) is source electrode, third end
It (8) is grid.Correspondingly, the first end (10) of second device under test (2) is drain electrode, second end (9) is source electrode, the
Three ends (11) are grid.Correspondingly, the first end (12) of the third device under test (3) is drain electrode, second end (13) is
Source electrode, third end (14) are grid.
In an embodiment of the present invention, which can also be applied to three-dimension device such as in addition to it can be used for two-dimensional surface device
In FinFET.
In this way, before testing arrangement works, first by metal interconnecting wires interconnection the first device under test (1) and second to
The source (6) of device (2), (10) are surveyed, metal interconnecting wires interconnection the first device under test (1) and the second device under test (2) are passed through
Drain terminal (7), (9) pass through metal interconnecting wires interconnection the first device under test (1) and the grid (8) of the second device under test (2), (11)；
It is mutual by metal by metal interconnecting wires interconnection the second device under test (2) and the source (10) of third device under test (3), (12)
Line interconnects the second device under test (2) and the drain terminal (9) of third device under test (3), (13), passes through metal interconnecting wires interconnection second
Device under test (2) and the grid (11) of third device under test (3), (14), as shown in Figure 1, it is to be measured to constitute secondary image in parallel
Try device architecture.
In another embodiment of the present invention, before testing arrangement works, pass through metal interconnecting wires interconnection the first
One device under test (1) and the drain terminal (6) of the second device under test (2), (10) interconnect the first device under test by metal interconnecting wires
(1) and the source (7) of the second device under test (2), (9), to be measured by metal interconnecting wires interconnection the first device under test (1) and second
The grid (8) of device (2), (11)；The leakage of the second device under test (2) and third device under test (3) is interconnected by metal interconnecting wires
(10), (12) are held, interconnect the second device under test (2) and the source (9) of third device under test (3), (13) by metal interconnecting wires,
By metal interconnecting wires interconnection the second device under test (2) and the grid (11) of third device under test (3), (14), as shown in Figure 1,
Constitute secondary image tested device structure in parallel.
As shown in Fig. 2, to be inserted in the device under test (1) being mirrored into, (2) intermediate for first sensor (4) of the invention, second
Sensor (5) has been inserted in the device under test (2) being mirrored into, (3) centre, by Metal gate layer (15), SiO2Insulating layer (16) with
And body silicon layer (17) constitutes the MIS device similar to capacitor.The body being made of metal (M)-insulator (I)-semiconductor (S)
System is known as MIS structure, is known as MIS device (MIS diode) with the device that this structure is formed.If insulator therein is
SiO2, then correspondingly it is MOS structure and MOS diode.
As shown in figure 3, the grid G ate5A of the first device under test and the grid G ate1A of the second device under test are logical when work
Metal interconnecting wires to be crossed to connect, the source electrode of the source electrode of the first device under test and the second device under test is connected by metal interconnecting wires, the
The drain electrode of one device under test is connected with the drain electrode of the second device under test by metal interconnecting wires；The grid of second device under test
Gate1A is connected with the grid G ate3A of third device under test by metal interconnecting wires, and the source electrode and third of the second device under test wait for
The source electrode for surveying device is connected by metal interconnecting wires, and the drain electrode of the second device under test and the drain electrode of third device under test pass through metal
Interconnection line connection；The end grid G ate4B of first sensor and the end grid G ate2B of second sensor are drawn with metal wire respectively
Out, Gate4B and Gate2B gate current data are measured respectively.The present invention utilizes senser element MIS structure, by giving grid end and leakage
End applies voltage Vg and Vd respectively, and scanning sensor part grid current Ig utilizes the grid current and temperature curve measured
(Ig-T) temperature at device under test both ends is read.
As shown in figure 4, including the following steps: the present invention also provides a kind of self-heating effect test method of above structure
S1, test device is closed, preset senser element gate voltage calibrates senser element；
S2, the corresponding grid current of two senser elements and temperature curve (Ig-T) are extracted respectively；As shown in figure 5, measurement
Biasing is not added in the grid current characteristic of device at a temperature of obtained varying environment, device under test, changes ambient temperature measurement sensing
The grid current characteristic of device MIS structure.
S3, test device, i.e. device under test (1), (2), (3), self-heating to stable state are opened, while measures two sensors
Grid current Ig '；Preferably, under the premise of maintaining senser element gate voltage constant, it is same to stable state to open self-heating device
When scanning sensor part gate current Ig '.
S4, respectively refer to the corresponding grid current of senser element and temperature curve obtain MIS structure curent change δ Ig and
Temperature change δ T caused by device under test self-heating effect；Attached drawing 6 show under given gate bias voltage (Vg=1V) electric current with
The relation schematic diagram of temperature.It is available in biased electrical from the grid current characteristic of device at a temperature of the varying environment that measurement obtains
The relationship of grid current and temperature that pressure is 1V (or given certain bias value) is as shown in Figure 6.Measurement device under test from
When fuel factor influences, device under test is first biased to normal working voltage, then applies a bias voltage in senser element grid
So that MIS structure both end voltage measures grid current at this time with equal to 1V (or given certain bias value), then in Fig. 6
The temperature spot for finding corresponding current is regarded as the temperature of senser element at this time.It i.e. can by the curent change dIg of MIS structure
To obtain temperature change dT caused by device under test self-heating effect.
S5, the self-heating effect situation for obtaining test device source electrode and drain electrode respectively.
For the prior art poor reliability, accuracy be low, the cumbersome disadvantage of test structure, present invention utilizes five phases
Adjacent MOSFET element carries out self-heating effect test, and three MOS devices are as self-heating device, with metal interconnecting wires respectively to certainly
The source of heating device, drain terminal interconnection constitute mirror-image structure.Intermediate MOS device is practical due to leaking altogether with both ends MOS device common source
It is upper equivalent at MIS structure, fuel factor test is carried out as senser element.By extracting senser element gate tunneling electric current, benefit
With the positive correlation of gate current and temperature, the self-heating effect of device is characterized, to realize while measure the source of device under test
With drain terminal self-heating temperature, the accuracy and confidence level of test are improved.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (10)
1. a kind of self-heating effect tests structure, which is characterized in that the structure includes:
First device under test (1), the second device under test (2), third device under test (3), first sensor (4), second sensor
(5)；First device under test (1) and second device under test (2) are in mirror-image arrangement, institute relative to first sensor (4)
The second device under test (2) and the third device under test (3) are stated relative to second sensor (5) in mirror-image arrangement.
2. self-heating effect according to claim 1 tests structure, which is characterized in that
First device under test (1) includes first end (6), second end (7), third end (8), second device under test (2)
Including first end (10), second end (9), third end (11), the third device under test (3) includes first end (12), second end
(13), third end (14).
3. self-heating effect as claimed in claim 2 tests structure, which is characterized in that
Pass through the first end (6) of metal interconnecting wires interconnection the first device under test (1) and the first end of the second device under test (2)
(10), pass through the second end (7) of metal interconnecting wires interconnection the first device under test (1) and the second end of the second device under test (2)
(9), pass through the third end (8) of metal interconnecting wires interconnection the first device under test (1) and the third end of the second device under test (2)
(11)；
Pass through the first end (10) of metal interconnecting wires interconnection the second device under test (2) and the first end of third device under test (3)
(12), pass through the second end (9) of metal interconnecting wires interconnection the second device under test (2) and the second end of third device under test (3)
(13), pass through the third end (11) of metal interconnecting wires interconnection the second device under test (2) and the third end of third device under test (3)
(14)。
4. self-heating effect according to claim 2 tests structure, which is characterized in that
The first end (6) of first device under test (1) is in relative to sensor (4) with the first end (10) of the second device under test (2)
Mirror-image arrangement；The second end (7) of first device under test (1) and the second end (9) of the second device under test (2) are relative to sensor
It (4) is in mirror-image arrangement；
The first end (10) of second device under test (2) is in relative to sensor (5) with the first end (12) of third device under test (3)
Mirror-image arrangement；The second end (9) of second device under test (2) and the second end (13) of third device under test (3) are relative to sensor
It (5) is in mirror-image arrangement.
5. self-heating effect according to claim 1 or 2 tests structure, which is characterized in that
First device under test (1), the second device under test (2), third device under test (3) are all made of self-heating field-effect tube MOS device.
6. self-heating effect according to claim 4 tests structure, which is characterized in that
The first end (6) of first device under test (1) is source electrode, second end (7) is drain electrode, third end (8) are grid；It is described
The first end (10) of second device under test (2) is source electrode, second end (9) is drain electrode, third end (11) are grid；The third waits for
The first end (12) for surveying device (3) is source electrode, second end (13) is drain electrode, third end (14) are grid.
7. self-heating effect according to claim 4 tests structure, which is characterized in that
The first end (6) of first device under test (1) is drain electrode, second end (7) is source electrode, third end (8) are grid；It is described
The first end (10) of second device under test (2) is drain electrode, second end (9) is source electrode, third end (11) are grid；The third waits for
The first end (12) for surveying device (3) is drain electrode, second end (13) is source electrode, third end (14) are grid.
8. self-heating effect according to claim 1-7 tests structure, which is characterized in that
The structure is used for two-dimensional surface device or three-dimension device.
9. self-heating effect according to claim 8 tests structure, which is characterized in that
The first sensor (4) is identical with the second sensor (5) structure, includes Metal gate layer (15), SiO2Insulating layer
(16) and body silicon layer (17).
10. a kind of self-heating effect test method, which is characterized in that described using the structure described in any one of claim 1-9
Method includes the following steps:
Device under test is closed, preset sensor gate voltage calibrates sensor；
The corresponding grid current of two sensors and temperature curve are extracted respectively；
Three device under test are opened, maintain two sensor gate voltages constant, self-heating to stable state, while measuring two sensors
Grid current；
According to each sensor gate electric current of measurement corresponding grid current and temperature curve, device under test source electrode is determined
With the temperature of drain electrode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116224009A (en) * | 2023-04-11 | 2023-06-06 | 中芯先锋集成电路制造(绍兴)有限公司 | Measuring structure and measuring method for SOI self-heating effect |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006165480A (en) * | 2004-12-10 | 2006-06-22 | Toshiba Corp | Semiconductor device |
| CN103063995A (en) * | 2011-10-21 | 2013-04-24 | 北京大学 | Method for predicating reliability service life of silicon on insulator (SOI) metal-oxide -semiconductor field effect transistor (MOSFET) device |
| JP2016166807A (en) * | 2015-03-10 | 2016-09-15 | 株式会社東芝 | Current test method |
| CN106483439A (en) * | 2015-08-31 | 2017-03-08 | 中芯国际集成电路制造(上海)有限公司 | The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor |
| CN206774540U (en) * | 2017-02-24 | 2017-12-19 | 中芯国际集成电路制造（天津）有限公司 | Self-heating effect detects structure |
-
2019
- 2019-06-12 CN CN201910508070.0A patent/CN110346702B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006165480A (en) * | 2004-12-10 | 2006-06-22 | Toshiba Corp | Semiconductor device |
| CN103063995A (en) * | 2011-10-21 | 2013-04-24 | 北京大学 | Method for predicating reliability service life of silicon on insulator (SOI) metal-oxide -semiconductor field effect transistor (MOSFET) device |
| JP2016166807A (en) * | 2015-03-10 | 2016-09-15 | 株式会社東芝 | Current test method |
| CN106483439A (en) * | 2015-08-31 | 2017-03-08 | 中芯国际集成电路制造(上海)有限公司 | The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor |
| CN206774540U (en) * | 2017-02-24 | 2017-12-19 | 中芯国际集成电路制造（天津）有限公司 | Self-heating effect detects structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116224009A (en) * | 2023-04-11 | 2023-06-06 | 中芯先锋集成电路制造(绍兴)有限公司 | Measuring structure and measuring method for SOI self-heating effect |
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