CN110336463A - A kind of temperature-difference thermoelectric can and luminous energy merge Acquisition Circuit - Google Patents

A kind of temperature-difference thermoelectric can and luminous energy merge Acquisition Circuit Download PDF

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Publication number
CN110336463A
CN110336463A CN201910601792.0A CN201910601792A CN110336463A CN 110336463 A CN110336463 A CN 110336463A CN 201910601792 A CN201910601792 A CN 201910601792A CN 110336463 A CN110336463 A CN 110336463A
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CN
China
Prior art keywords
nmos tube
storage capacitor
module
capacitor
generation film
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Application number
CN201910601792.0A
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Chinese (zh)
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CN110336463B (en
Inventor
夏银水
郑翰泽
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Ningbo University
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Ningbo University
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/32—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover rotating at constant speed
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/56—Power conversion systems, e.g. maximum power point trackers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

The invention discloses a kind of temperature-difference thermoelectrics to merge Acquisition Circuit with luminous energy, feature is to include the first thermoelectric generation film, second thermoelectric generation film, optical energy power module, the maximal power tracing module of maximum power point voltage is worked in for controlling optical energy power module, for generating the first signal generator of switching signal, sample and keep the sampling and keep module of the open-circuit voltage of current optical energy power module, inductance, first diode, second diode, first storage capacitor, second storage capacitor, third storage capacitor, 4th storage capacitor, first NMOS tube, second NMOS tube, third NMOS tube and load；Advantage is by the way that the first thermoelectric generation film and the second thermoelectric generation film are distributed in respectively in the circuit for extracting charge circuit and afterflow of optical energy power module, the synchronous extraction to the first thermoelectric generation film and the faint temperature-difference thermoelectric energy that the second thermoelectric generation film generates is realized using the induced electromotive force of inductance, to improve the general power of total system energy acquisition.

Description

A kind of temperature-difference thermoelectric can and luminous energy merge Acquisition Circuit
Technical field
The present invention relates to a kind of energy acquisition circuit, especially a kind of temperature-difference thermoelectric can merge Acquisition Circuit with luminous energy.
Background technique
Optical energy power is a kind of photoelectric effect using semiconductor material, the method being acquired to the luminous energy in environment. It is compared to the generation mode of traditional energy, luminous energy is referred to as optimal new energy.At present to the research in relation to optical energy power Also relative maturity not only updates electricity generation material, while also becoming for the maximal power tracing technology of light energy capture In maturation, the capture efficiency of luminous energy is further improved.
Temperature-difference thermoelectric energy Acquisition Circuit is broadly divided into capacitive charge pump circuit and inductance type boost circuit, charge at present Although pump circuit can promote the voltage of thermoelectric generation film, charge pump construction driving capability is very weak, low voltage charge pump circuit Even more inefficiency；And inductance type boost circuit is although high-efficient, and drives the ability of load strong, but since the temperature difference is sent out The universal lower open-circuit voltage of electric piece, results in boost structure and generally requires external power supply power supply.Due to material property and by The open-circuit voltage of such environmental effects, thermoelectric generation film will be very low, and the threshold value of circuit devcie is not achieved, so that energy can not be driven Capture circuit is measured, which increase the difficulty that thermal gradient energy utilizes.
Summary of the invention
The temperature difference for extracting luminous energy and temperature-difference thermoelectric energy can be synchronized technical problem to be solved by the invention is to provide one kind Thermoelectric power and luminous energy merge Acquisition Circuit, and acquisition general power is higher.
The technical scheme of the invention to solve the technical problem is: a kind of temperature-difference thermoelectric can be with luminous energy fusion acquisition Circuit, in include the first thermoelectric generation film, the second thermoelectric generation film, optical energy power module, for controlling optical energy power module work Make in the maximal power tracing module of maximum power point voltage, the first signal generator for generating switching signal, sampling guarantor Hold module, inductance, first diode, the second diode, the first storage capacitor, the second storage capacitor, third storage capacitor, the 4th Storage capacitor, the first NMOS tube, the second NMOS tube, third NMOS tube and load, the sampling and keep module include the 4th NMOS tube, the 5th NMOS tube, the 6th NMOS tube, first capacitor, the second capacitor and second signal generator, first temperature difference The anode connection of the anode of power generation sheet, one end of first storage capacitor and the first diode, described first The source electrode of the cathode of diode, one end of the inductance and second NMOS tube connects, the other end of the inductance, The drain electrode of the third NMOS tube and the anode connection of second diode, the cathode of second diode, institute The one end for the 4th storage capacitor stated and one end connection of the load, the output end of first signal generator, institute The grid for the first NMOS tube stated and the connection of the grid of the 5th NMOS tube, the anode of the optical energy power module, institute The drain electrode for the first NMOS tube stated and the drain electrode of the 4th NMOS tube connection, it is the source electrode of the 4th NMOS tube, described The drain electrode of the 5th NMOS tube, one end of second capacitor and the maximal power tracing module negative input end connect It connects, the output end of the maximal power tracing module, the grid of second NMOS tube and the third NMOS tube Grid connection, the source electrode of first NMOS tube, the drain electrode of second NMOS tube, second storage capacitor one The connection of the positive input terminal of end and the maximal power tracing module, the source electrode of the third NMOS tube, the third storage One end of energy capacitor and the negative terminal connection of second thermoelectric generation film, the second signal generator, the described the 6th The grid of NMOS tube and the connection of the grid of the 4th NMOS tube, the drain electrode of the 6th NMOS tube, the described the 5th The connection of one end of the source electrode of NMOS tube and the first capacitor, the negative terminal of first thermoelectric generation film, described first The other end of storage capacitor, the source electrode of the 6th NMOS tube, the other end of the first capacitor, second capacitor The other end, the negative terminal of the optical energy power module, the other end of second storage capacitor, the third energy storage electricity The other end of appearance, the anode of second thermoelectric generation film, the other end of the 4th storage capacitor and the load The other end be grounded.
The maximal power tracing module includes comparator, first resistor and second resistance, and the comparator is born Input terminal is connect with the source electrode of the 4th NMOS tube, the source of one end of the first resistor and first NMOS tube The positive input terminal of pole connection, the other end of the first resistor, one end of the second resistance and the comparator connects It connects, the grid connection of the other end of the second resistance, the output end of the comparator and second NMOS tube.? Incipient stage generates low level signal to the first NMOS tube, so that optical energy power module is from master by the first signal generator first Circuit Interrupt is opened, and sampling and keep module is started to work at this time, controls the 4th NMOS tube and the 6th by second signal generator NMOS tube closure, so that the second capacitor is electrically charged, both end voltage reaches the open-circuit voltage of optical energy power module, then by the second letter Number generator controls the 4th NMOS tube and the 6th NMOS tube disconnects, while the first signal generator issues high level signal control the Five NMOS tubes and the first NMOS tube closure, the second capacitor charges to first capacitor at this time, so that the voltage at the second capacitor both ends reaches To the maximum power voltage of optical energy power module at this time, at this moment since optical energy power module gives the charging of the second storage capacitor, when the After voltage on two storage capacitors is more than the voltage on the second capacitor, comparator generate high level signal drive the second NMOS tube and Third NMOS transistor conduction, at this point, due to the charge of third storage capacitor be it is upper it is negative under just, thus by the second storage capacitor, second NMOS tube, inductance, third NMOS tube and third storage capacitor have formed a circuit, and charge is transferred to by two storage capacitors On inductance；As the process of charge-extraction gradually carries out, the voltage at the second storage capacitor both ends will decline, when it drops to luminous energy hair When below electric module maximum power voltage, comparator makes the second NMOS tube and third NMOS tube break for low level signal is generated Open, at this point, the presence of the induced electromotive force due to inductance, by the first storage capacitor, first diode, inductance, the second diode, 4th storage capacitor and load constitute the circuit of afterflow, the energy transfer that inductance extraction is arrived to load and the 4th storage capacitor On, a charge-extraction process is completed, the fusion acquisition of luminous energy and temperature-difference thermoelectric energy is realized.
Compared with the prior art, the advantages of the present invention are as follows the first signal generators to generate low level signal control first NMOS tube disconnects, and sampling and keep module acquires and keeps the open-circuit voltage of current optical energy power module, when the first signal generator When generating high level signal, the first NMOS tube closure, while the open-circuit voltage sampled is transferred to maximum by sampling and keep module Power tracking module, maximal power tracing module to the voltage on the output voltage and the second storage capacitor of sampling and keep module into Row compares, and when the output voltage of sampling and keep module is less than voltage on the second storage capacitor, maximal power tracing module is produced Raw high level signal drives the second NMOS tube and third NMOS transistor conduction, at this time optical energy power module, the second storage capacitor, second NMOS tube, inductance, third NMOS tube and third storage capacitor have formed an extraction charge circuit for electric energy transfer to inductance On, when the output voltage of sampling and keep module is greater than the voltage on the second storage capacitor, maximal power tracing module generates low Level signal drives the second NMOS tube and third NMOS tube to disconnect, by the first storage capacitor, first diode, inductance, the two or two Pole pipe, the 4th storage capacitor and load constitute the circuit of afterflow, the energy transfer that inductance extraction is arrived to load and the 4th storage On energy capacitor, a charge-extraction process is completed, realizes the fusion acquisition of luminous energy and temperature-difference thermoelectric energy；By warm by first Poor power generation sheet and the second thermoelectric generation film are distributed in respectively in the circuit for extracting charge circuit and afterflow of optical energy power module, are utilized The induced electromotive force of inductance is realized to the faint temperature-difference thermoelectric energy of the first thermoelectric generation film and the generation of the second thermoelectric generation film It is synchronous to extract, to improve the general power of total system energy acquisition.
Detailed description of the invention
Fig. 1 is circuit theory schematic diagram of the invention；
Fig. 2 is physical circuit schematic diagram of the invention.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
A kind of temperature-difference thermoelectric can and luminous energy merge Acquisition Circuit, including the first thermoelectric generation film U1, the second thermoelectric generation film U3, optical energy power module U2, the maximal power tracing mould for working in for controlling optical energy power module U2 maximum power point voltage Block U6, the first signal generator U4 for generating switching signal, sampling and keep module U5, inductance L, first diode D1, Two diode D2, the first storage capacitor Ct1, the second storage capacitor Cp, third storage capacitor Ct2, the 4th storage capacitor Cr, first NMOS tube N1, the second NMOS tube N2, third NMOS tube N3 and load RL, sampling and keep module U5 include the 4th NMOS tube N4, the Five NMOS tube N5, the 6th NMOS tube N6, first capacitor C1, the second capacitor C2 and second signal generator U7, the first thermo-electric generation The anode connection of the anode of piece U1, one end of the first storage capacitor Ct1 and first diode D1, the cathode of first diode D1, The connection of the source electrode of one end of inductance L and the second NMOS tube N2, the drain electrode and the two or two of the other end, third NMOS tube N3 of inductance L The anode connection of pole pipe D2, the cathode of the second diode D2, one end of the 4th storage capacitor Cr and one end connection for loading RL, the The grid of the output end of one signal generator U4, the grid of the first NMOS tube N1 and the 5th NMOS tube N5 connects, optical energy power mould The anode of block U2, the drain electrode of the first NMOS tube N1 and the drain electrode of the 4th NMOS tube N4 connection, the source electrode of the 4th NMOS tube N4, the 5th The negative input end of the drain electrode of NMOS tube N5, one end of the second capacitor C2 and maximal power tracing module U6 connects, maximum power with The grid of the output end of track module U6, the grid of the second NMOS tube N2 and third NMOS tube N3 connects, the source of the first NMOS tube N1 Pole, the drain electrode of the second NMOS tube N2, the positive input terminal connection of one end of the second storage capacitor Cp and maximal power tracing module U6, The negative terminal of the source electrode of third NMOS tube N3, one end of third storage capacitor Ct2 and the second thermoelectric generation film U3 connects, second signal The grid of generator U7, the grid of the 6th NMOS tube N6 and the 4th NMOS tube N4 connect, the drain electrode of the 6th NMOS tube N6, the 5th One end of the source electrode of NMOS tube N5 and first capacitor C1 connection, the negative terminal of the first thermoelectric generation film U1, the first storage capacitor Ct1 The other end, the source electrode of the 6th NMOS tube N6, the other end of first capacitor C1, the other end of the second capacitor C2, optical energy power module The negative terminal of U2, the other end of the second storage capacitor Cp, the other end of third storage capacitor Ct2, the second thermoelectric generation film U3 are just The other end at end, the other end of the 4th storage capacitor Cr and load RL is grounded.
Maximal power tracing module U6 includes comparator COMP1, first resistor R1 and second resistance R2, comparator COMP1 Negative input end connect with the source electrode of the 4th NMOS tube N4, one end of first resistor R1 is connect with the source electrode of the first NMOS tube N1, The positive input terminal of the other end of first resistor R1, one end of second resistance R2 and comparator COMP1 connects, and second resistance R2's is another The grid of one end, the output end of comparator COMP1 and the second NMOS tube N2 connects.
The working principle of above embodiments is as follows: in the incipient stage, generating low level by the first signal generator U4 first Signal gives the first NMOS tube N1, so that optical energy power module U2 is disconnected from main circuit, sampling and keep module U5 starts work at this time Make, the 4th NMOS tube N4 and the 6th NMOS tube N6 is controlled by second signal generator U7 and is closed, so that the second capacitor C2 is filled Electricity, both end voltage reach the open-circuit voltage of optical energy power module U2, then control the 4th NMOS tube by second signal generator U7 N4 and the 6th NMOS tube N6 is disconnected, while the first signal generator U4 issues high level signal and controls the 5th NMOS tube N5 and first NMOS tube N1 closure, the second capacitor C2 charges to first capacitor C1 at this time, so that the voltage at the second both ends capacitor C2 reaches at this time The maximum power voltage of optical energy power module U2, at this moment since optical energy power module U2 gives the second storage capacitor CPCharging, when the Two storage capacitor CPOn voltage be more than voltage on the second capacitor C2 after, comparator COMP1 generates high level signal driving the Two NMOS tube N2 and third NMOS tube N3 conducting, at this point, due to the charge of third storage capacitor Ct2 be it is upper it is negative under just, thus by Second storage capacitor CP, the second NMOS tube N2, inductance L, third NMOS tube N3 and third storage capacitor Ct2 constitute one and return Road, charge are transferred on inductance L by two storage capacitors；As the process of charge-extraction gradually carries out, the second storage capacitor Cp The voltage at both ends will decline, and when it drops to optical energy power module U2 maximum power voltage or less, comparator COMP1 will generate low Level signal disconnects the second NMOS tube N2 and third NMOS tube N3, at this point, the presence of the induced electromotive force due to inductance L, It is made of the first storage capacitor Ct1, first diode D1, inductance L, the second diode D2, the 4th storage capacitor Cr and load RL The circuit of afterflow in the energy transfer for extracting inductance L to load RL and the 4th storage capacitor Cr, completes a charge Extraction process realizes the fusion acquisition of luminous energy and temperature-difference thermoelectric energy.

Claims (2)

1. a kind of temperature-difference thermoelectric can merge Acquisition Circuit with luminous energy, it is characterised in that including the first thermoelectric generation film, second temperature difference Power generation sheet, optical energy power module, the maximal power tracing mould for working in for controlling optical energy power module maximum power point voltage Block, the first signal generator for generating switching signal, sampling and keep module, inductance, first diode, the second diode, First storage capacitor, the second storage capacitor, third storage capacitor, the 4th storage capacitor, the first NMOS tube, the second NMOS tube, Three NMOS tubes and load, the sampling and keep module include the 4th NMOS tube, the 5th NMOS tube, the 6th NMOS tube, the first electricity Appearance, the second capacitor and second signal generator, the one of the anode of first thermoelectric generation film, first storage capacitor The anode connection of end and the first diode, the cathode of the first diode, one end of the inductance and described The second NMOS tube source electrode connection, the other end of the inductance, the drain electrode of the third NMOS tube and described second The anode connection of diode, the cathode of second diode, one end of the 4th storage capacitor and the load One end connection, the output end of first signal generator, the grid of first NMOS tube and the described the 5th The grid of NMOS tube connects, the anode of the optical energy power module, the drain electrode of first NMOS tube and the described the 4th The drain electrode of NMOS tube connects, the source electrode of the 4th NMOS tube, the drain electrode of the 5th NMOS tube, second capacitor One end and the maximal power tracing module negative input end connection, the output end of the maximal power tracing module, The grid of second NMOS tube and the connection of the grid of the third NMOS tube, the source electrode of first NMOS tube, institute The positive input of the drain electrode for the second NMOS tube stated, one end of second storage capacitor and the maximal power tracing module End connection, the source electrode of the third NMOS tube, one end of the third storage capacitor and second thermoelectric generation film Negative terminal connection, the grid of the second signal generator, the grid of the 6th NMOS tube and the 4th NMOS tube One end of pole connection, the drain electrode of the 6th NMOS tube, the source electrode of the 5th NMOS tube and the first capacitor connects Connect, the negative terminal of first thermoelectric generation film, the other end of first storage capacitor, the 6th NMOS tube source Pole, the other end of the first capacitor, the other end of second capacitor, the negative terminal of the optical energy power module, institute The other end for the second storage capacitor stated, the other end of the third storage capacitor, second thermoelectric generation film are just End, the other end of the 4th storage capacitor and the other end of the load are grounded.
2. a kind of temperature-difference thermoelectric according to claim 1 can and luminous energy merge Acquisition Circuit, it is characterised in that it is described most High-power tracking module includes comparator, first resistor and second resistance, the negative input end of the comparator and described the The source electrodes of four NMOS tubes connects, and one end of the first resistor is connect with the source electrode of first NMOS tube, and described the The positive input terminal of the other end of one resistance, one end of the second resistance and the comparator connects, second electricity The grid of the other end of resistance, the output end of the comparator and second NMOS tube connects.
CN201910601792.0A 2019-07-05 2019-07-05 Temperature difference thermoelectric energy and light energy fusion acquisition circuit Active CN110336463B (en)

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CN110336463B CN110336463B (en) 2020-12-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021217455A1 (en) * 2020-04-28 2021-11-04 武文静 Voltage bootstrap chip, weak light collection circuit and device, and control method therefor
WO2021217454A1 (en) * 2020-04-28 2021-11-04 武文静 Voltage bootstrap chip, low-light collection circuit and device, and control methods therefor

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CN201749380U (en) * 2010-07-23 2011-02-16 德州学院 A kind of temperature difference is utilized circuit
CN102185528A (en) * 2011-05-10 2011-09-14 北京航空航天大学 Heat control system and method with complementary solar energy and temperature difference energy applicable to long-endurance aircraft
CN106102216A (en) * 2016-06-13 2016-11-09 电子科技大学 A kind of pocket lamp utilizing the temperature difference and solar electrical energy generation
CN107769358A (en) * 2017-12-18 2018-03-06 许昌学院 A kind of voltage boosting and stabilizing circuit based on the charging of the mobile phone temperature difference
CN107947315A (en) * 2017-11-14 2018-04-20 浙江大学 A kind of electric energy management system of deep-sea hydrothermal energy temperature difference electricity generation device
US20190140453A1 (en) * 2017-11-07 2019-05-09 Zhehan Yi Model Predictive Controller for Autonomous Hybrid Microgrids

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201749380U (en) * 2010-07-23 2011-02-16 德州学院 A kind of temperature difference is utilized circuit
CN102185528A (en) * 2011-05-10 2011-09-14 北京航空航天大学 Heat control system and method with complementary solar energy and temperature difference energy applicable to long-endurance aircraft
CN106102216A (en) * 2016-06-13 2016-11-09 电子科技大学 A kind of pocket lamp utilizing the temperature difference and solar electrical energy generation
US20190140453A1 (en) * 2017-11-07 2019-05-09 Zhehan Yi Model Predictive Controller for Autonomous Hybrid Microgrids
CN107947315A (en) * 2017-11-14 2018-04-20 浙江大学 A kind of electric energy management system of deep-sea hydrothermal energy temperature difference electricity generation device
CN107769358A (en) * 2017-12-18 2018-03-06 许昌学院 A kind of voltage boosting and stabilizing circuit based on the charging of the mobile phone temperature difference

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021217455A1 (en) * 2020-04-28 2021-11-04 武文静 Voltage bootstrap chip, weak light collection circuit and device, and control method therefor
WO2021217454A1 (en) * 2020-04-28 2021-11-04 武文静 Voltage bootstrap chip, low-light collection circuit and device, and control methods therefor

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