CN110335970A - Flexible display substrates and its manufacturing method, flexible display apparatus - Google Patents

Flexible display substrates and its manufacturing method, flexible display apparatus Download PDF

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Publication number
CN110335970A
CN110335970A CN201910639614.7A CN201910639614A CN110335970A CN 110335970 A CN110335970 A CN 110335970A CN 201910639614 A CN201910639614 A CN 201910639614A CN 110335970 A CN110335970 A CN 110335970A
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Prior art keywords
layer
substrates
heat
flexible
thermal insulation
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CN201910639614.7A
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CN110335970B (en
Inventor
宫奎
张志海
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application discloses a kind of flexible display substrates and its manufacturing method, flexible display apparatus, belongs to field of display technology.This method comprises: forming flexible substrates on the rigid substrate；Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with flexible substrates；Display structure is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer；Rigid substrates are removed, flexible display substrates are obtained.The application can to avoid laser lift-off rigid substrates during the heat that generates burn the display structures of flexible display substrates, reduce the influence of the processes of removing rigid substrates to the quality of flexible display substrates.The application is used for the manufacture of flexible display substrates.

Description

Flexible display substrates and its manufacturing method, flexible display apparatus
Technical field
This application involves field of display technology, in particular to a kind of flexible display substrates and its manufacturing method, Flexible Displays Device.
Background technique
With the development of semiconductor display device and the growing consumption demand of consumer, flexible display substrates are Start largely to be introduced to the market, is widely used in bent screen mobile phone, the bent screen Flexible Displays such as mobile unit and wearable device Device.
Currently, usually manufacturing flexible substrates and the display structure in flexible substrates on the rigid substrate, adopt later Flexible display substrates are obtained with laser lift-off removing rigid substrates.
But during removing rigid substrates, the high temperature heat that laser generates can burn the displays of flexible display substrates Structure influences the quality of flexible display substrates.
Apply for content
The application provides a kind of flexible display substrates and its manufacturing method, flexible display apparatus, helps avoid laser stripping The heat generated during from rigid substrates is burnt the display structures of flexible display substrates.The technical solution is as follows:
In a first aspect, providing a kind of manufacturing method of flexible display substrates, which comprises
Flexible substrates are formed on the rigid substrate；
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates；
Display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer；
The rigid substrates are removed, the flexible display substrates are obtained.
Optionally, the thermal insulation layer and the heat-conducting layer same layer are distributed.
Optionally, the thermal insulation layer have hollowed out area, the heat-conducting layer be located in the hollowed out area and with it is described every Thermosphere contact.
Optionally, the thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
Optionally, the material of the thermal insulation layer is insulating materials, and the material of the heat-conducting layer is conductive material.
Optionally, the material of the thermal insulation layer includes aerosil, and the material of the heat-conducting layer includes graphene.
Optionally, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: logical It crosses a patterning processes and forms the thermal insulation layer and the heat-conducting layer on the rigid substrates for being formed with the flexible substrates.
Optionally, described to pass through a patterning processes and form institute on the rigid substrates for being formed with the flexible substrates State thermal insulation layer and the heat-conducting layer, comprising:
Heat-insulated material layers are formed on the rigid substrates for being formed with the flexible substrates；
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers；
To not performed etching by the region that first photoetching offset plate figure covers in the heat-insulated material layers, make described heat-insulated Material layers form hollowed out area, obtain the thermal insulation layer；
Heat-conducting layer, the heat-conducting are formed on the rigid substrates for being formed with first photoetching offset plate figure Layer part is located in the hollowed out area；
First photoetching offset plate figure and the heat-conducting layer on first photoetching offset plate figure are removed, is obtained To the heat-conducting layer.
Optionally, the first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers, comprising:
The first photoresist layer is formed on the rigid substrates for being formed with the heat-insulated material layers；
First photoresist layer is exposed using the first mask plate, and to first photoresist layer after exposure Develop, obtains first photoetching offset plate figure；
The display structure includes: switch unit, and the switch unit includes grid, described to be formed with the thermal insulation layer Structure is shown with being formed on the rigid substrates of the heat-conducting layer, comprising:
Conductive material layer and are sequentially formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer Two photoresist layers, the polarity of second photoresist layer are opposite with the polarity of first photoresist layer；
Second photoresist layer is exposed using first mask plate, and to second photoetching after exposure Glue-line develops, and obtains the second photoetching offset plate figure；
To not performed etching by the region that second photoetching offset plate figure covers on the conductive material layer, make the conduction Material layers form the grid, and the grid is contacted with heat-conducting layer superposition, and the grid is in the flexible substrates Orthographic projection is overlapped with orthographic projection of the heat-conducting layer in the flexible substrates；
Remove second photoetching offset plate figure.
Optionally, the display structure includes luminescence unit and the switch unit,
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, also wrap It includes: sequentially forming gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode on the rigid substrates for being formed with the grid Layer, obtains the switch unit；
The method also includes: sequentially form on the rigid substrates for being formed with the switch unit passivation layer, flat Smooth layer and pixel defining layer；
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, also wrap It includes: sequentially forming anode, luminescent layer and cathode far from the side of the rigid substrates in the flatness layer, obtain the luminous list Member, the luminescence unit are located in the pixel openings of pixel defining layer restriction；
It is formed before thermal insulation layer and heat-conducting layer on the rigid substrates for be formed with the flexible substrates, the method is also It include: to form buffer layer on the rigid substrates for being formed with the flexible substrates；
It is described that thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: in shape At forming the thermal insulation layer and the heat-conducting layer on the rigid substrates for having the buffer layer.
Second aspect, provides a kind of flexible display substrates, and the flexible display substrates include:
Flexible substrates；
Thermal insulation layer and heat-conducting layer in the flexible substrates；
The display structure of side positioned at the thermal insulation layer and the heat-conducting layer far from the flexible substrates.
Optionally, the thermal insulation layer and the heat-conducting layer same layer are distributed.
Optionally, the thermal insulation layer have hollowed out area, the heat-conducting layer be located in the hollowed out area and with it is described every Thermosphere contact.
Optionally, the thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
Optionally, the material of the thermal insulation layer is insulating materials, and the material of the heat-conducting layer is conductive material.
Optionally, the material of the thermal insulation layer includes aerosil, and the material of the heat-conducting layer includes graphene.
Optionally, the display structure includes luminescence unit and switch unit, and the switch unit includes along far from described Grid, gate insulation layer, active layer, interlayer dielectric layer and the source-drain electrode layer that the direction of flexible substrates is sequentially distributed, the luminous list Member includes anode, luminescent layer and the cathode being sequentially distributed along the direction far from the flexible substrates；
The flexible display substrates further include: the buffer layer between the flexible substrates and the thermal insulation layer, and, Passivation layer, flatness layer and the pixel defining layer of side positioned at the switch unit far from the flexible substrates, the luminous list Member is located in the pixel openings that the pixel defining layer limits.
The third aspect provides a kind of flexible display apparatus, including any flexible display substrates of second aspect.
Technical solution provided by the present application has the benefit that
Flexible display substrates provided by the embodiments of the present application and its manufacturing method, flexible display apparatus, due to flexible substrates Setting on the rigid substrate, and has thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work During skill removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, the heat that heat-conducting layer can generate laser Amount is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, reduces the mistake of removing rigid substrates Influence of the journey to the quality of flexible display substrates.
It should be understood that the above general description and the following detailed description are merely exemplary, this can not be limited Application.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is a kind of method flow diagram of the manufacturing method of flexible display substrates provided by the embodiments of the present application；
Fig. 2 is the method flow diagram of the manufacturing method of another flexible display substrates provided by the embodiments of the present application；
Fig. 3 is the schematic diagram after a kind of flexible substrates of formation on the rigid substrate provided by the embodiments of the present application；
Fig. 4 be it is provided by the embodiments of the present application it is a kind of on the rigid substrates for be formed with flexible base board formed buffer layer after Schematic diagram；
Fig. 5 is provided by the embodiments of the present application a kind of thermal insulation layer and thermally conductive to be formed on the rigid substrates for be formed with buffer layer The method flow diagram of layer；
Fig. 6 be it is provided by the embodiments of the present application it is a kind of heat-insulated material layers are formed on the rigid substrates for be formed with buffer layer after Schematic diagram；
Fig. 7 is provided by the embodiments of the present application a kind of the first photoetching to be formed on the rigid substrates for being formed with heat-insulated material layers Schematic diagram after glue-line；
Fig. 8 is a kind of schematic diagram being exposed to the first photoresist layer provided by the embodiments of the present application；
Fig. 9 is the schematic diagram after a kind of the first photoresist layer to after exposure provided by the embodiments of the present application develops；
Figure 10 is provided by the embodiments of the present application a kind of to the area not covered by the first photoetching offset plate figure in heat-insulated material layers Domain perform etching after schematic diagram；
Figure 11 is that a kind of formed on the rigid substrates for being formed with the first photoetching offset plate figure provided by the embodiments of the present application is led Schematic diagram after hot material layers；
Figure 12 be a kind of first photoetching offset plate figure of removal provided by the embodiments of the present application and be located at the first photoetching offset plate figure On heat-conducting layer after schematic diagram；
Figure 13 is that a kind of formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer provided by the embodiments of the present application opens Close the method flow diagram of unit；
Figure 14 is a kind of successively shape on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer provided by the embodiments of the present application At the schematic diagram after conductive material layer and the second photoresist layer；
Figure 15 is a kind of schematic diagram being exposed to the second photoresist layer provided by the embodiments of the present application；
Figure 16 is the schematic diagram after a kind of the second photoresist layer to after exposure provided by the embodiments of the present application develops；
Figure 17 is the area not covered by the second photoetching offset plate figure on a kind of pair of conductive material floor provided by the embodiments of the present application Domain perform etching after schematic diagram；
Figure 18 is the schematic diagram after a kind of second photoetching offset plate figure of removal provided by the embodiments of the present application；
Figure 19 be it is provided by the embodiments of the present application it is a kind of sequentially formed on the rigid substrates for be formed with grid gate insulation layer, Schematic diagram after active layer, interlayer dielectric layer and source-drain electrode layer；
Figure 20 is provided by the embodiments of the present application a kind of passivation to be sequentially formed on the rigid substrates for be formed with switch unit Schematic diagram after layer and flatness layer；
Figure 21 be it is provided by the embodiments of the present application it is a kind of on the rigid substrates for be formed with flatness layer formed luminescence unit and Schematic diagram after pixel defining layer；
Figure 22 is a kind of schematic diagram using laser lift-off removing rigid substrates provided by the embodiments of the present application；
Figure 23 is a kind of structural schematic diagram of flexible display substrates provided by the embodiments of the present application.
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application Example, and together with specification it is used to explain the principle of the application.
Specific embodiment
In order to keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with attached drawing to the application make into It is described in detail to one step, it is clear that described embodiments are only a part of embodiments of the present application, rather than whole implementation Example.Based on the embodiment in the application, obtained by those of ordinary skill in the art without making creative efforts All other embodiment, shall fall in the protection scope of this application.
With the development of display technology, with Organic Light Emitting Diode (English: Organic Light-Emitting Diode；Abbreviation OLED) display device representative flexible display apparatus using more and more extensive.The master of flexible display apparatus Wanting display unit is flexible display substrates, and flexible display substrates are using polyimides (English: Polyimide；Referred to as: PI) formed Flexible substrates as underlay substrate, instead of the glass substrate in rigid display base plate, using thin-film package (English: Thin Film Encapsulation；Referred to as: TFE) structure replaces the package substrate in rigid display base plate, and flexible display substrates have Frivolous, flexible and folding characteristic can satisfy user to the growth requirement of display device.
In the use process of flexible display apparatus, it is general that many users have found that the screen surrounding of flexible display apparatus will appear Green phenomenon, especially in the lower background of the brightness such as screen display grey, this phenomenon is particularly evident.OLED expert thinks The reason of this phenomenon occur is to remove rigid substrates using laser lift-off during manufacturing flexible display substrates When, the high temperature heat that laser generates has been burnt the green light emitting layers of flexible display substrates.
Flexible display substrates provided by the embodiments of the present application and its manufacturing method, flexible display apparatus, due to flexible substrates Setting on the rigid substrate, and has thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work During skill removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, the heat that heat-conducting layer can generate laser Amount is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, reduces the mistake of removing rigid substrates Influence of the journey to the quality of flexible display substrates.
Referring to FIG. 1, it illustrates a kind of methods of the manufacturing method of flexible display substrates provided by the embodiments of the present application Flow chart, referring to Fig. 1, this method be may comprise steps of:
In a step 101, flexible substrates are formed on the rigid substrate.
In a step 102, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with flexible substrates.
In step 103, display structure is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer.
At step 104, rigid substrates are removed, flexible display substrates are obtained.
In conclusion the manufacturing method of flexible display substrates provided by the embodiments of the present application, since flexible substrates setting exists On rigid substrates, and there is thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is removed using laser lift-off During rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, and the heat that heat-conducting layer can generate laser is from soft Property display base plate export, therefore the heat that can be generated to avoid laser be burnt and be shown structure, and the process of removing rigid substrates is reduced Influence to the quality of flexible display substrates.
Referring to FIG. 2, it illustrates the sides of the manufacturing method of another flexible display substrates provided by the embodiments of the present application Method flow chart, referring to fig. 2, this method may include following steps:
In step 201, flexible substrates are formed on the rigid substrate.
Wherein, the material of rigid substrates can be leaded light and transparent non-metallic material with certain robustness, for example, just Property substrate material can be one of glass, quartz or transparent resin or a variety of combinations.Flexible substrates can be single layer Structure or multilayered structure, for example, flexible substrates can be the organic layer of single layer, alternatively, flexible substrates can be organic layer and nothing The multilayered structure that machine layer is alternately superimposed.Wherein, the material of organic layer can be organic transparent material, for example, organic layer Material can be PI, polyethylene naphthalate (English: Polyethylene naphthalate two formic acid glycol ester；Referred to as: PEN), polyethylene terephthalate (English: Polyethylene terephthalate；Letter Claim: PET), polyarylate (English: Polyarylate；Referred to as: PAR), polycarbonate (English: Polycarbonate；Referred to as: PC), polyether sulfone (English: Polyethersulfone；Referred to as: PES) or polyetherimide is (English: Polyetherimide；Letter Claim: PEI) one or more of combination.
Referring to FIG. 3, it illustrates one kind provided by the embodiments of the present application to form flexible substrates 101 on rigid substrates 00 Schematic diagram afterwards, the Fig. 3 are illustrated so that flexible substrates 101 are single layer structure as an example.As shown in figure 3, flexible substrates 101 cover Rigid substrates 00.Illustratively, by taking the material of flexible substrates 101 is PI as an example, it is molten one layer of PI can be coated on rigid substrates 00 Then liquid is dried to obtain flexible substrates 101 to the PI solution of coating.
In step 202, buffer layer is formed on the rigid substrates for be formed with flexible substrates.
Wherein, buffer layer can protect the display structure being subsequently formed, and helps avoid extraneous steam and invades and harasses display structure In film layer, the material of the buffer layer can be one of SiOx (Chinese: silica) or SiNx (Chinese: silicon nitride) or two The combination of person.
Referring to FIG. 4, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with flexible base board 102 The schematic diagram after buffer layer 102 is formed on 00, buffer layer 102 covers flexible base board 102.Illustratively, it using SiOx as material, uses Any one of techniques such as sputtering, thermal evaporation or deposition form buffering on the rigid substrates 00 for be formed with flexible base board 102 Layer 102.
In step 203, thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with buffer layer.
Wherein, thermal insulation layer can be distributed with heat-conducting layer with same layer, and the thickness of thermal insulation layer can be equal with the thickness of heat-conducting layer. For example, thermal insulation layer has hollowed out area, heat-conducting layer is located in the hollowed out area and contacts with thermal insulation layer so that thermal insulation layer with lead Thermosphere can be distributed with same layer.
In the embodiment of the present application, can be formed on the rigid substrates for be formed with buffer layer by a patterning processes every Thermosphere and heat-conducting layer.It is being formed with referring to FIG. 5, it illustrates one kind provided by the embodiments of the present application by a patterning processes The method flow diagram of thermal insulation layer and heat-conducting layer is formed on the rigid substrates of buffer layer, referring to Fig. 5, this method may include following several Sub-steps:
In sub-step 2031, heat-insulated material layers are formed on the rigid substrates for be formed with buffer layer.
Wherein, the material of the heat-insulated material layers can be the insulating materials with good heat-proof quality, implement in the application In example, the material of the heat-insulated material layers may include SiO2(Chinese: silica) aeroge.SiO2Aeroge refraction coefficient is situated between It is a kind of effective with characteristics such as lower thermal conductivity, low refraction coefficient, high light transmittance and solid-states between liquid and gas Heat preserving and insulating material, SiO2The heat insulating effect and SiO of aeroge2The extremely low bulk density of aeroge itself and inside are big The cavity of amount is related, by the study found that making SiO with means appropriate2Aeroge has nanoporous network structure, can make SiO2Aeroge have extremely low solid-state and gaseous state heat-conductive characteristic, at normal temperature thermal conductivity can down to 0.013W/mK (watt Special every meter of every Kelvin), it is preferable thermal insulation material in solid material.Currently, SiO2Aeroge is widely used in aerospace vehicle, Ground, underground, the water surface and the underwater vehicles, building facility, and, work, agricultural equipment etc., usually using the method for coating SiO is coated on substrate2Aeroge, to utilize SiO2Aeroge makes insulation film.
Referring to FIG. 6, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates 00 for being formed with buffer layer 102 The upper schematic diagram formed after heat-insulated material layers A, heat-insulated material layers A cover buffer layer 102, and the thickness of the heat-insulated material layers A can be with For 50~500nm (nanometer).Illustratively, buffer layer can be formed with using one of coating processes such as spin coating or spraying A layer thickness is coated on 102 rigid substrates 00 in the SiO of 50~500nm2Aeroge, and to the SiO of coating2Aeroge carries out It is dried to obtain heat-insulated material layers A.
It should be readily apparent to one skilled in the art that before executing the sub-step 2031, it can be with previously prepared SiO2Aeroge. In the embodiment of the present application, SiO can be prepared using one-step method or two step method2Aeroge.SiO is prepared using two step method2Aeroge Refer to, is to prepare raw material with silicon monomer, successively carries out acidic catalyst and base catalysis obtains SiO2Aeroge, wherein in acidity Under catalytic condition, the silicon oxygen bond that slow polycondensation reaction forms polymer form occurs for silicon monomer, obtains weak crosslinking, low-density network Gel, under the conditions of base catalysis, the weak crosslinking, low-density network gel in silicic acid monomer hydrolysis after rapid polycondensation, it is raw SiO is obtained at relatively compact colloidal particles2Aeroge, wherein the size of the colloidal particles depends on preparation condition.SiO2Gas The structure of gel depends primarily on the reaction rate of each component hydrolysis and polycondensation.SiO is prepared using two step method2Aeroge can obtain There must be the SiO of high porosity, low bulk density2Aeroge, after measured, the SiO prepared using two step method2The porosity it is reachable It is more than 97% (percent), SiO2The line density of aeroge is 4nm, and bore hole size is 1~30nm, and uses one-step method preparation SiO2The line density of aeroge is 10~50nm, and bore hole size is 1~100nm.SiO is prepared using two step method2The optics of aeroge Transmitance is higher.
Wherein, SiO is prepared using two step method2The process of aeroge may include: firstly, with ethyl orthosilicate (English: Tetraethyl Orthosilicate；It is referred to as: TEOS) presoma, is equipped with suitable ethyl alcohol and hydrochloric acid mixes at room temperature And be sufficiently stirred 30 minutes or more, mixed solution is stood 100 minutes in the environment of 60 DEG C (degree Celsius), it is hydrolyzed And suitable ammonia spirit is instilled the mixed solution later by polycondensation reaction, and after being stirred at room temperature 30 minutes, sealing is simultaneously It moves in dry environment (relative humidity < 60%), aging 1 to 5 day, completes SiO2The preparation of aeroge.It should be noted that Preparation SiO provided by the embodiments of the present application2The method of aeroge is only a kind of example, prepares SiO2The method of aeroge is not only It is defined in two step method, the embodiment of the present application does not limit this.
In sub-step 2032, the first photoresist layer is formed on the rigid substrates for being formed with heat-insulated material layers.
Wherein, the first photoresist layer can be negativity photoresist layer.
Referring to FIG. 7, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with heat-insulated material layers A Schematic diagram after forming the first photoresist layer G on 00, the first photoresist layer G cover heat-insulated material layers A.Illustratively, Ke Yi It is formed on the rigid substrates 00 of heat-insulated material layers A and coats one layer of negative photoresist as the first photoresist layer G.
In sub-step 2033, the first photoresist layer is exposed using the first mask plate, and to first after exposure Photoresist layer develops, and obtains the first photoetching offset plate figure.
Referring to FIG. 8, it illustrates a kind of first mask plate X of use provided by the embodiments of the present application to the first photoresist layer The schematic diagram that G is exposed, first mask plate X can have transmission region (not marking in Fig. 8) and lightproof area (in Fig. 8 Do not mark), as shown in figure 8, the first mask plate X can be arranged in the first side of the photoresist layer G far from rigid substrates 00, make First photoresist layer G is located between rigid substrates 00 and the first mask plate X, and the first mask plate X and is formed with the first photoresist The rigid substrates 00 of layer G align, and then irradiate the first mask plate X, the light for launching light source using light source (being not shown in Fig. 8) Line exposes to the first photoresist layer G through the transmission region of the first mask plate X, is irradiated on first photoresist layer G by light Region is photosensitive, and the region that do not irradiated by light is not photosensitive.
After being exposed to the first photoresist layer G, it can develop to the first photoresist layer G after exposure.Illustratively, Referring to FIG. 9, showing after developing it illustrates a kind of the first photoresist layer G to after exposure provided by the embodiments of the present application It is intended to, in conjunction with Fig. 8 and Fig. 9, since the first photoresist layer G is negativity photoresist layer, to the first photoresist layer G after exposure After being developed, part not photosensitive on the first photoresist layer G can be removed, protects part photosensitive on the first photoresist layer G It stays, obtains the first photoetching offset plate figure G1, which has hollowed out area, corresponding first photoetching in the hollowed out area Not photosensitive region on glue-line G.
In sub-step 2034, to not performed etching by the region that the first photoetching offset plate figure covers in heat-insulated material layers, make Heat-insulated material layers form hollowed out area, obtain thermal insulation layer.
Referring to FIG. 10, it illustrates it is provided by the embodiments of the present application it is a kind of on heat-insulated material A layer not by the first photoetching Schematic diagram after the region of glue pattern G1 covering performs etching illustratively can use dry etch process, with the first photoresist Figure G1 be etch-resistant layer, on heat-insulated material layers A not by the first photoetching offset plate figure G1 cover region perform etching, removal every The region not covered by the first photoetching offset plate figure G1 on hot material layers A, so that hollowed out area A1 is formed on heat-insulated material layers A, So that heat-insulated material layers A forms thermal insulation layer 103.
In sub-step 2035, heat-conducting layer is formed on the rigid substrates for being formed with the first photoetching offset plate figure, it is thermally conductive Material layers part is located in the hollowed out area of heat-insulated material layers.
Wherein, the thickness of the heat-conducting layer and the thickness of thermal insulation layer are identical, so that the thickness of finally formed heat-conducting layer Degree is identical as the thickness of the thermal insulation layer, guarantees the planarization of flexible display substrates.The material of heat-conducting layer can be for good The insulating materials or conductive material of good heating conduction, in the embodiment of the present application, the material of the heat-conducting layer may include stone Black alkene.Graphene has excellent performance, for example, graphene has the theoretical specific surface area of superelevation, excellent thermal conductivity, high-strength Amount, high-modulus, high electron mobility and high conductivity, the theoretical specific surface area of graphene is up to 2630m2g-1It is (square metre every Gram), thermal coefficient is up to 5000W/mK (every meter of watt every Kelvin), and strong to measure up to 130GPa (Ji Pa), modulus is reachable 1060GPa (Ji Pa), electron mobility is up to 15000cm2/ (Vs) (centimeters per volt is per second), conductivity is reachable 7200S/cm (Siemens per centimeter).
Figure 11 is please referred to, a kind of is being formed with the rigid of the first photoetching offset plate figure G1 it illustrates provided by the embodiments of the present application Property substrate 00 on formed heat-conducting layer B after schematic diagram, referring to Figure 11 and combine Figure 10, the heat-conducting layer part B covering First photoetching offset plate figure G1, partially positioned at thermal insulation layer 103 hollowed out area A1 in, and the thickness of heat-conducting layer B with it is heat-insulated Layer 103 thickness it is identical, heat-conducting layer B with a thickness of 50~500nm, to guarantee the planarization of flexible display substrates.
Illustratively, using graphene as material, using any one of techniques such as sputtering, thermal evaporation, spin coating or spraying in shape At heat-conducting layer B is formed on the rigid substrates 00 for having the first photoetching offset plate figure G1, heat-conducting layer part B is located at the first photoetching On glue pattern G1, partially it is located in the hollowed out area A1 on thermal insulation layer 103.
In sub-step 2036, the first photoetching offset plate figure and the heat-conducting on the first photoetching offset plate figure are removed Layer, obtains heat-conducting layer.
Figure 12 is please referred to, it illustrates a kind of first photoetching offset plate figure G1 of removal provided by the embodiments of the present application and is located at The schematic diagram after heat-conducting layer B on first photoetching offset plate figure G1 illustratively can remove the first photoetching by cineration technics Glue pattern G1, while removing the first photoetching offset plate figure G1, the heat-conducting layer B on the first photoetching offset plate figure G1 is also gone It removes, the heat-conducting layer B in the hollowed out area A1 on thermal insulation layer 103 retains to form heat-conducting layer 104.
It should be noted that the embodiment of the present application is to be formed and be led on the rigid substrates for being formed with the first photoetching offset plate figure After hot material layers, removes the first photoetching offset plate figure and obtain heat-conducting layer after the heat-conducting layer on the first photoetching offset plate figure For be illustrated, it should be readily apparent to one skilled in the art that slot coated technique engraving in heat-insulated material layers can also be used Graphene is coated in empty region, to obtain heat-conducting layer, the embodiment of the present application is not limited this.
In step 204, switch unit is formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer.
Optionally, switch unit can be thin film transistor (TFT) (English: Thin Film Transistor；Referred to as: TFT), TFT generally includes grid, gate insulation layer, active layer, interlayer dielectric layer, source electrode and drain electrode.
Figure 13 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigidity for being formed with thermal insulation layer and heat-conducting layer The method flow diagram of switch unit is formed on substrate, referring to Figure 13, this method may include following sub-step:
In sub-step 2041, sequentially formed on the rigid substrates for being formed with thermal insulation layer and heat-conducting layer conductive material layer and Second photoresist layer, the polarity of the second photoresist layer are opposite with the polarity of the first photoresist layer.
Wherein, the material of conductive material layer can be the conductive materials such as metal material or alloy material, for example, conductive material The material of layer is metal Al (Chinese: aluminium), one of Ni metal (Chinese: copper) or metal Mo (Chinese: molybdenum), alternatively, conductive The material of material layers is a variety of alloy materials in metal Al, Ni metal or metal Mo.Second photoresist layer can be positivity Photoresist layer.
Figure 14 is please referred to, it illustrates one kind provided by the embodiments of the present application to be formed with thermal insulation layer 103 and heat-conducting layer 104 Rigid substrates 00 on sequentially form the schematic diagram after conductive material layer Y and the second photoresist layer J, conductive material layer Y covering every Thermosphere 103 and heat-conducting layer 104, the second photoresist layer J cover conductive material layer Y.
Illustratively, it is possible, firstly, to be formed with thermal insulation layer 103 using any one of techniques such as sputtering or thermal evaporation and leading Metal Al material layers are formed on the rigid substrates 00 of thermosphere 104 as conductive material layer Y, then, are being formed with conductive material layer Y Rigid substrates 00 on coating one layer of positive photoresist as the second photoresist layer J.
In sub-step 2042, the second photoresist layer is exposed using the first mask plate, and to second after exposure Photoresist layer develops, and obtains the second photoetching offset plate figure.
Figure 15 is please referred to, a kind of is shown what the second photoresist layer J was exposed it illustrates provided by the embodiments of the present application It is intended to, the realization process of the sub-step 2033 of the embodiment of the present application can be referred to the process that the second photoresist layer J is exposed, Details are not described herein for the embodiment of the present application.
Figure 16 is please referred to, it illustrates a kind of the second photoresist layer J progress to after exposure provided by the embodiments of the present application Schematic diagram after development, due to the second photoresist layer J be positive photoresist layer, to the second photoresist layer J after exposure into After row development, part photosensitive on the second photoresist layer J can be removed, retains part not photosensitive on the second photoresist layer J Obtain the second photoetching offset plate figure J1.It is readily appreciated that, in the embodiment of the present application, the second photoetching offset plate figure J1 and the first photoresist figure Shape G1 is complementary.
In sub-step 2043, to not performed etching by the region that the second photoetching offset plate figure covers on conductive material layer, make Conductive material layer forms grid.
Please refer to Figure 17, it illustrates on a kind of pair of conductive material layer Y provided by the embodiments of the present application not by the second photoetching Glue pattern J1 covering region perform etching after schematic diagram.Referring to Figure 17, wet-etching technology can be used, with the second photoetching Glue pattern J1 is etch-resistant layer, performs etching available grid 1051, grid 1051 and heat-conducting layer 104 to conductive material layer Y Superposition contact, and grid 1051 on rigid substrates 00 orthographic projection and orthographic projection weight of the heat-conducting layer 104 on rigid substrates 00 It closes.
In the embodiment of the present application, grid 1051 is contacted with the superposition of heat-conducting layer 104, therefore grid 1051 and heat-conducting layer 104 Parallel connection, since heat-conducting layer 104 is using having the graphene of good electric conductivity to be made, heat-conducting layer 104 can reduce grid 1051 impedance.Further, since thermal insulation layer 104 and grid 1051 are manufactured by same mask plate, therefore it can be to avoid more The use of a mask plate reduces the manufacturing cost of flexible display substrates.
In sub-step 2044, the second photoetching offset plate figure is removed.
Figure 18 is please referred to, it illustrates the signals after a kind of second photoetching offset plate figure J1 of removal provided by the embodiments of the present application Figure.Illustratively, the second photoetching offset plate figure J1 being covered on grid 1051 can be removed by cineration technics.
In sub-step 2045, gate insulation layer, active layer, interlayer are sequentially formed on the rigid substrates for be formed with grid and is situated between Matter layer and source-drain electrode layer, source-drain electrode layer include source electrode and drain electrode, obtain switch unit.
Wherein, the material of gate insulation layer can be transparent insulation material, for example, the material of gate insulation layer can be SiO2、 SiOx、SiNx、Al2O3The combination of one or more of (Chinese: aluminium oxide) or SiOxNx (Chinese: silicon oxynitride), it is active The material of layer can be one in oxide (English: Oxide), a-Si (Chinese: amorphous silicon) or p-Si (Chinese: polysilicon) Kind, for example, the material of active layer can be indium gallium zinc oxide (English: Indium Gallium Zinc Oxide；Referred to as: IGZO) or indium tin zinc oxide is (English: Indium Tin Zinc Oxide；Referred to as: ITZO), the material of interlayer dielectric layer can Think SiO2、SiOx、SiNx、Al2O3Or the combination of one or more of SiOxNx, the material of both source electrode and drain electrodes All can be the material of both metal material or alloy material, such as source electrode and drain electrode be metal Al, Ni metal or metal Any one of metal materials such as Mo or the material of both source electrode and drain electrodes are in metal Al, Ni metal and metal Mo A variety of alloy materials.
Figure 19 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates 00 for being formed with grid 1051 On sequentially form gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer (not marking in Figure 19) after Schematic diagram, grid 1051, gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer are along far from rigid base The direction of plate 00 be sequentially distributed constitute switch unit 105, source-drain electrode layer include source electrode 1055 and drain electrode 1056, source electrode 1055 and leakage Pole 1056 does not contact, and source electrode 1055 and drain electrode 1056 are contacted with active layer 1053 respectively, as shown in figure 19, interlayer dielectric layer 1054 there is multiple via holes, source electrode 1055 and drain electrode 1056 to pass through via hole and active layer 1053 different on interlayer dielectric layer 1054 Contact.
It illustratively, is SiO with the material of gate insulation layer 10522, the material of active layer 1053 is IGZO, interlayer dielectric layer 1054 material is SiOx, for the material of source electrode 1055 and drain electrode 1056 is metal Al, is then being formed with grid 1051 Gate insulation layer 1052, active layer 1053, interlayer dielectric layer 1054 and source-drain electrode layer are sequentially formed on rigid substrates 00 may include: Firstly, with SiO2For material, by any one of techniques such as deposition, coating or sputtering in the rigid base for being formed with grid 1051 Gate insulation layer 1052 is formed on plate 00；Then, gate insulation is being formed with by any one of techniques such as deposition, coating or sputtering IGZO material layers are formed on the rigid substrates 00 of layer 1052, and IGZO material layers have been handled by a patterning processes Active layer 1053；Then, using SiOx as material, active layer is being formed by any one of techniques such as deposition, coating or sputtering Interlayer dielectric layer 1054 is formed on 1053 rigid substrates 00；Finally, being existed by any one of techniques such as sputtering or thermal evaporation Formation metal Al material layers on the rigid substrates 00 of interlayer dielectric layer 1054 are formed with, by a patterning processes to metal Al material Matter layer is handled to obtain source electrode 1055 and drain electrode 1056.
In step 205, passivation layer and flatness layer are sequentially formed on the rigid substrates for be formed with switch unit.
Optionally, the material of passivation layer can be the combination of one or more of SiOx, SiNx or SiOxNx, flat The material of layer can be the transparent organic materials such as organic resin, alternatively, the material of flatness layer can be SiOx, SiNx, Al2O3Or The transparent inorganic materials such as SiOxNx.
Figure 20 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid base for being formed with switch unit 105 Schematic diagram after sequentially forming passivation layer 106 and flatness layer 107 on plate 00, passivation layer 106 can protect source electrode 1055 and drain electrode 1056, via hole is respectively provided on passivation layer 106 and flatness layer 107, and the via hole of the via hole of passivation layer 106 and flatness layer 107 connects It is logical.
It illustratively, is SiOx with the material of passivation layer 106, for the material of flatness layer 107 is organic resin, firstly, can To form one on the rigid substrates 00 for being formed with switch unit 105 by any one of techniques such as deposition, coating or sputtering Layer SiOx material layers, are handled SiOx material layers by a patterning processes, to form via hole in SiOx material layers, from And passivation layer 106 is obtained, then, passivation layer is being formed with by any one of techniques such as magnetron sputtering, thermal evaporation or deposition One layer of organic resin is deposited on 106 rigid substrates 00 and obtains resin material layer, and resin material layer is successively exposed and is shown Shadow, to form via hole on resin material layer, to obtain flatness layer 107.
In step 206, luminescence unit and pixel defining layer are formed on the rigid substrates for be formed with flatness layer, are shone single Member is located in the pixel openings that pixel defining layer limits.
Wherein, flexible display substrates can be oled display substrate, and luminescence unit can be OLED light emitting unit, shine single Member may include anode, luminescent layer and cathode, and luminescent layer may include organic luminous layer, in addition, luminescent layer can also include sky One layer or more in cave implanted layer, hole transmission layer, hole blocking layer, electronic barrier layer, electron transfer layer or electron injecting layer Layer.
In the embodiment of the present application, flexible display substrates can be top emitting display base plate or bottom emitting display base plate, when When flexible display substrates are bottom emitting display base plate, anode is transparent electrode, and cathode is reflecting electrode, when flexible display substrates are When top emitting display base plate, anode is reflecting electrode, and cathode is transparent electrode.Wherein, the material of transparent electrode can be transparent Conductive material, for example, the material of the transparent electrode can be tin indium oxide (English: Indium tin oxide；Referred to as: ITO), Indium zinc oxide (English: Indium zinc oxide；Referred to as: IZO) or Al-Doped ZnO is (English: aluminum-doped zinc oxide；One of referred to as: ZnO:Al) etc. or a variety of combinations, the material of reflecting electrode can for metal material or Alloy material, for example, the material of reflecting electrode can be one of metal Al, Ni metal or metal Mo or a variety of alloy materials Material.Wherein, the material of pixel defining layer can for polysiloxanes, fluorine is hydrocarbon, one in polyamide polymers or epoxy resin Kind or a variety of combinations, the material of organic luminous layer can be luminous organic material.
Figure 21 is please referred to, it illustrates provided by the embodiments of the present application a kind of in the rigid substrates for being formed with flatness layer 107 The schematic diagram after luminescence unit 108 and pixel defining layer 109 is formed on 00, pixel defining layer 109 limits pixel openings K, sends out Light unit 108 is located in pixel openings K, which includes anode 1081, luminescent layer 1082 and the cathode being sequentially overlapped 1083, anode 1081 passes sequentially through the via hole on via hole and passivation layer 106 on flatness layer 107 and connect with drain electrode 1056.
Illustratively, using flexible display substrates as bottom emitting display base plate, the material of anode 1081 is ITO, pixel defining layer 109 material is epoxy resin, and the material of luminescent layer 1082 is luminous organic material, and the material of cathode 1083 is that metal Al is Example then forms luminescence unit 108 on the rigid substrates 00 for be formed with flatness layer 107 and pixel defining layer 109 may include: head It first, can be by any one of techniques such as deposition, magnetron sputtering or thermal evaporation in the rigid substrates 00 for being formed with flatness layer 107 One layer of ITO material layers of upper formation, handle ITO material layers to obtain anode 1081 by a patterning processes；Then, it uses Spin coating, blade coating or chemical vapor deposition (English: Chemical Vapor Deposition；Appointing referred to as: CVD) etc. in techniques It is a kind of to form epoxy resin material layer on the rigid substrates 00 for be formed with anode 1081, by exposure and imaging technique to epoxy Resin material layer is handled to obtain pixel defining layer 109；Then, it is limited using InkJet printing processes in pixel defining layer 109 Pixel openings K in print and Organic luminescent material solution and be dried to obtain luminescent layer 1082, alternatively, using vapor deposition work Luminous organic material is deposited in the pixel openings K that pixel defining layer 109 limits and obtains luminescent layer 1082 for skill；Finally by deposition Or any one of techniques such as thermal evaporation form metal Al material layers on luminescent layer 1082, by a patterning processes to metal Al material layers are handled to obtain cathode 1083.
It is readily appreciated that, display base plate may include the organic luminous layer of different colours, and the organic luminous layer of each color can To be formed by an inkjet printing or an evaporation process, the organic luminous layer of different colours can be beaten by multiple ink-jet Print or multiple evaporation process are formed.For example, display base plate may include red organic luminous layer, green organic luminous layer and indigo plant Colour organic luminous layer, can repeat three times InkJet printing processes to form red organic luminous layer, green organic luminous layer With blue organic luminous layer, or repeat three times evaporation process to form red organic luminous layer, green organic luminous layer With blue organic luminous layer.In general, green organic luminous layer needs higher electric current during driving, and thicknesses of layers is than red Colour organic luminous layer and blue organic light emission thickness, therefore, the homogeneity of the thickness of green organic luminous layer is usually poor, causes The aging speed of the luminescent layer of different colours is different, and the uniformity that display base plate is shown is poor.In the embodiment of the present application, Ke Yixian Green organic luminous layer is formed, so that in finally formed flexible display substrates, green organic luminous layer is closer to flexible base Bottom promotes product yield to guarantee uniformity that display base plate is shown.
In step 207, rigid substrates are removed, flexible display substrates are obtained.
Rigid substrates can be removed using laser lift-off.Laser lift-off is flexible display substrates manufacturing process In, the important process of rigid substrates is removed, cardinal principle is: the laser beam emitted using UV excimer laser, from rigid Property substrate far from the side of flexible substrates irradiate the rigid substrates, so that laser beam is radiated at the flexible substrates through the rigid substrates In the one side contacted with the rigid substrates, and react on one side with what the flexible substrates were contacted with the rigid substrates, the flexibility The one side evaporation that substrate is contacted with the rigid substrates is realized so that rigid substrates be made to separate with flexible substrates to rigid substrates Removing.
Figure 22 is please referred to, it illustrates provided by the embodiments of the present application a kind of using laser lift-off removing rigid substrates 00 schematic diagram can use laser, irradiate the rigid substrates 00 from rigid substrates 00 far from the side of flexible substrates 101, Under the action of laser, the cohesive force between flexible substrates 101 and rigid substrates 00 is removed, to remove rigid substrates 00.
As shown in figure 22, orthographic projection of the luminescent layer 1082 on rigid substrates 00 is located at thermal insulation layer 103 in rigid substrates 00 On orthographic projection on, and grid 1051 on rigid substrates 00 orthographic projection and positive throwing of the heat-conducting layer 104 on rigid substrates 00 Shadow is overlapped, and so, entire flexible display substrates are just protected by thermal insulation layer 103 and heat-conducting layer 104.It is shelled using laser When separating process removes rigid substrates 00, thermal insulation layer 103 can effectively completely cut off the high temperature heat of laser generation, and heat-conducting layer 104 can be with The high temperature heat that will accumulate on thermal insulation layer 103 guides, and avoids the film layer of thermal accumlation damage flexible display substrates.
Please refer to Figure 23, it illustrates it is provided by the embodiments of the present application it is a kind of removing rigid substrates 00 after schematic diagram, stripping From flexible display substrates 10 available after rigid substrates 00.As shown in figure 23,1082 region of luminescent layer is Flexible Displays The display area of substrate 10, the dyke region of pixel defining layer 109 are the non-display area of flexible display substrates 10.
In conclusion the manufacturing method of flexible display substrates provided by the embodiments of the present application, since flexible substrates setting exists On rigid substrates, and it is provided with thermal insulation layer and heat-conducting layer between flexible substrates and display structure, is using laser lift-off work During skill removes rigid substrates, thermal insulation layer can completely cut off the high temperature heat of laser generation, and heat-conducting layer can generate laser High temperature heat exported from flexible display substrates, therefore the high temperature heat that can be generated to avoid laser be burnt and be shown structure, be reduced Influence of the process of removing rigid substrates to the quality of flexible display substrates.
In the manufacturing method for the display base plate that the embodiment of the present disclosure provides, a related patterning processes include photoresist Coating, exposure, development, etching and photoresist lift off, by a patterning processes to material layers (such as ITO material layers) at Reason includes: firstly, coating a layer photoresist in material layers (such as ITO material layers) forms photoresist layer, then, using exposure mask Version is exposed photoresist layer, so that photoresist layer forms complete exposure region and non-exposed area, then, at developing process Reason, is completely removed the photoresist of complete exposure region, and the photoresist of non-exposed area all retains, later, using etching technics The corresponding region of exposure region complete in material layers (such as ITO material layers) is performed etching, finally, the photoetching of removing non-exposed area Glue obtains corresponding structure (such as anode 1081).Here it is to be illustrated so that photoresist is positive photoresist as an example, works as light When photoresist is negative photoresist, the processes of a patterning processes can refer to the description of this section, and the embodiment of the present disclosure is herein no longer It repeats.
The sequencing of the manufacturing method step for the display base plate that the embodiment of the present disclosure provides can carry out appropriate adjustment, walk Suddenly according to circumstances can also accordingly be increased and decreased, the technology model that anyone skilled in the art discloses in the disclosure In enclosing, the method that can readily occur in variation should all cover within the protection scope of the disclosure, therefore repeat no more.
Based on same inventive concept, the embodiment of the present application also provides a kind of flexible display substrates, the Flexible Displays bases Plate can be flexible display substrates 10 as shown in figure 23.
Referring to fig. 23, which includes: flexible substrates 101；Thermal insulation layer in flexible substrates 101 103 and heat-conducting layer 104；The display structure of side positioned at thermal insulation layer 103 and heat-conducting layer 104 far from flexible substrates 101.Such as Figure 23 Shown, thermal insulation layer 103 and 104 same layer of heat-conducting layer are distributed, and the thickness of thermal insulation layer 103 is equal with the thickness of heat-conducting layer 104.It is optional Ground, thermal insulation layer 103 have hollowed out area, and heat-conducting layer 104 is located in hollowed out area and contacts with thermal insulation layer 103, so that heat-insulated Layer 103 is distributed with 104 same layer of heat-conducting layer.Wherein, thermal insulation layer 103 is distributed with 104 same layer of heat-conducting layer and thickness is equal, it is ensured that The planarization of flexible display substrates.
Optionally, the material of thermal insulation layer 103 is insulating materials, such as the material of thermal insulation layer 103 includes silica airsetting The material of glue, heat-conducting layer 104 is conductive material, such as the material of heat-conducting layer 104 includes graphene.
Optionally, as shown in figure 23, display structure includes luminescence unit 108 and switch unit 105, and switch unit 105 wraps Include grid 1051, gate insulation layer 1052, the active layer 1053, inter-level dielectric being sequentially distributed along the direction far from flexible substrates 101 Layer 1054 and source-drain electrode layer (not marking in Figure 23), source-drain electrode layer include source electrode 1055 and drain electrode 1056, and luminescence unit 108 includes Anode 1081, luminescent layer 1082 and the cathode 1083 being sequentially distributed along the direction far from flexible substrates 101, anode 1081 and drain electrode 1056 connections；
Optionally, please continue to refer to Figure 23, the flexible display substrates 10 further include: be located at flexible substrates 101 and thermal insulation layer Buffer layer 102 between 103, and, it is the passivation layer 106 of the side positioned at switch unit 105 far from flexible substrates 101, flat Layer 107 and pixel defining layer 109, luminescence unit 108 are located in the pixel openings of the restriction of pixel defining layer 109,106 He of passivation layer Flatness layer 107 has the via hole of connection, and anode 1081 passes sequentially through the via hole on via hole and passivation layer 106 on flatness layer 107 It is connect with drain electrode 1056.
It should be noted that the detailed construction description of flexible display substrates provided by the embodiments of the present application is in above method reality It applies and has been described clear in example, details are not described herein.
In conclusion flexible display substrates provided by the embodiments of the present application, due to having between flexible substrates and display structure There are thermal insulation layer and heat-conducting layer, and in manufacturing the flexible display substrates, flexible substrates are arranged on the rigid substrate, are using laser During stripping technology removes rigid substrates, thermal insulation layer can completely cut off the heat of laser generation, and heat-conducting layer can produce laser Raw heat is exported from display base plate, therefore the heat that can be generated to avoid laser burns and shows structure, is reduced and is removed rigid base Influence of the process of plate to the quality of flexible display substrates.
Based on same inventive concept, the embodiment of the present application also provides a kind of flexible display apparatus, Flexible Displays dresses It sets including flexible display substrates provided by the above embodiment, which can be el display device, for example, OLED display or quantum dot light emitting (English: Quantum Dot Light Emitting Diodes；It is referred to as: QLED) aobvious Showing device.The flexible display apparatus can be any products or components having a display function, for example, Electronic Paper, mobile phone, TV Machine, display, Digital Frame, navigator, wrist-watch or bracelet etc..
The foregoing is merely the alternative embodiments of the application, not to limit the application, it is all in spirit herein and Within principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.

Claims (11)

1. a kind of manufacturing method of flexible display substrates, which is characterized in that the described method includes:
Flexible substrates are formed on the rigid substrate；
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates；
Display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer；
The rigid substrates are removed, the flexible display substrates are obtained.
2. the method according to claim 1, wherein
Thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising:
The thermal insulation layer and described is formed on the rigid substrates for being formed with the flexible substrates by a patterning processes Heat-conducting layer.
3. according to the method described in claim 2, it is characterized in that,
It is described by a patterning processes formed on the rigid substrates for being formed with the flexible substrates thermal insulation layer and The heat-conducting layer, comprising:
Heat-insulated material layers are formed on the rigid substrates for being formed with the flexible substrates；
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers；
To not performed etching by the region that first photoetching offset plate figure covers in the heat-insulated material layers, make the heat-insulated material Layer forms hollowed out area, obtains the thermal insulation layer；
Heat-conducting layer, heat-conducting layer portion are formed on the rigid substrates for being formed with first photoetching offset plate figure Quartile is in the hollowed out area；
First photoetching offset plate figure and the heat-conducting layer on first photoetching offset plate figure are removed, institute is obtained State heat-conducting layer.
4. according to the method described in claim 3, it is characterized in that,
The first photoetching offset plate figure is formed on the rigid substrates for being formed with the heat-insulated material layers, comprising:
The first photoresist layer is formed on the rigid substrates for being formed with the heat-insulated material layers；
First photoresist layer is exposed using the first mask plate, and first photoresist layer after exposure is carried out Development, obtains first photoetching offset plate figure；
The display structure includes: switch unit, and the switch unit includes grid, described to be formed with the thermal insulation layer and institute It states and forms display structure on the rigid substrates of heat-conducting layer, comprising:
Conductive material layer and the second light are sequentially formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer Photoresist layer, the polarity of second photoresist layer are opposite with the polarity of first photoresist layer；
Second photoresist layer is exposed using first mask plate, and to second photoresist layer after exposure Develop, obtains the second photoetching offset plate figure；
To not performed etching by the region that second photoetching offset plate figure covers on the conductive material layer, make the conductive material Layer forms the grid, and the grid is contacted with heat-conducting layer superposition, and positive throwing of the grid in the flexible substrates Shadow is overlapped with orthographic projection of the heat-conducting layer in the flexible substrates；
Remove second photoetching offset plate figure.
5. according to the method described in claim 4, it is characterized in that,
The display structure includes luminescence unit and the switch unit,
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, further includes: It is formed on the rigid substrates of the grid and sequentially forms gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode layer, obtain To the switch unit；
The method also includes: passivation layer, flatness layer are sequentially formed on the rigid substrates for being formed with the switch unit And pixel defining layer；
It is described that display structure is formed on the rigid substrates for being formed with the thermal insulation layer and the heat-conducting layer, further includes: The flatness layer sequentially forms anode, luminescent layer and cathode far from the side of the rigid substrates, obtains the luminescence unit, institute Luminescence unit is stated to be located in the pixel openings of pixel defining layer restriction；
It is formed before thermal insulation layer and heat-conducting layer on the rigid substrates for be formed with the flexible substrates, the method is also wrapped It includes: forming buffer layer on the rigid substrates for being formed with the flexible substrates；
It is described that thermal insulation layer and heat-conducting layer are formed on the rigid substrates for be formed with the flexible substrates, comprising: to be formed with The thermal insulation layer and the heat-conducting layer are formed on the rigid substrates of the buffer layer.
6. a kind of flexible display substrates, which is characterized in that the flexible display substrates include:
Flexible substrates；
Thermal insulation layer and heat-conducting layer in the flexible substrates；
The display structure of side positioned at the thermal insulation layer and the heat-conducting layer far from the flexible substrates.
7. flexible display substrates according to claim 6, which is characterized in that
The thermal insulation layer and the heat-conducting layer same layer are distributed.
8. flexible display substrates according to claim 7, which is characterized in that
The thermal insulation layer has hollowed out area, and the heat-conducting layer is located in the hollowed out area and contacts with the thermal insulation layer.
9. flexible display substrates according to claim 8, which is characterized in that
The thickness of the thermal insulation layer is equal with the thickness of the heat-conducting layer.
10. according to any flexible display substrates of claim 6 to 9, which is characterized in that
The display structure includes luminescence unit and switch unit, and the switch unit includes along the side far from the flexible substrates To grid, gate insulation layer, active layer, interlayer dielectric layer and the source-drain electrode layer being sequentially distributed, the luminescence unit includes along separate Anode, luminescent layer and the cathode that the direction of the flexible substrates is sequentially distributed；
The flexible display substrates further include: the buffer layer between the flexible substrates and the thermal insulation layer, and, it is located at Passivation layer, flatness layer and the pixel defining layer of side of the switch unit far from the flexible substrates, the luminescence unit position In the pixel openings that the pixel defining layer limits.
11. a kind of flexible display apparatus, including any flexible display substrates of claim 6 to 10.
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CN113036065A (en) * 2021-03-08 2021-06-25 京东方科技集团股份有限公司 Flexible display substrate, preparation method thereof and display device
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