CN110335897A - A kind of multipolar system honeycomb electronic transistor structures - Google Patents
A kind of multipolar system honeycomb electronic transistor structures Download PDFInfo
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Abstract
The invention discloses a kind of multipolar system honeycomb electronic transistor structures, are related to electron transistor technical field.The present invention includes several electron crystal tube bodies, electron crystal tube body is positive hexagonal structure, several electron crystal tube bodies form honeycomb structure, electron transistor body central portion is equipped with a core channel, two electron crystal tube body sides junction are etched with edge channel, and edge channel is no resistance type edge channel or ladder by resistance type edge channel or secondary forceful electric power penetrating type edge channel or forceful electric power penetrating type edge channel.The electron transistor that the present invention passes through design honeycomb, enrich the Logic application ability of transistor, enhance the drain induced barrier and circuit stability of integrated circuit, the Charge sites of six edge channels of electron crystal tube body and the permutation and combination of charge attribute can form multi-signal state simultaneously, it carries more data to calculate and store, solves the problems, such as that the Logic application ability of existing electronic transistor structures and circuit stability are insufficient.
Description
Technical field
The invention belongs to electron transistor technical fields, more particularly to a kind of multipolar system honeycomb electronic transistor structures.
Background technique
Electron transistor is to pass through grid and electric current for controlling the flowing of electric current by the semiconductor devices of electric current driving
Control can be used as transmitting numerical information so that the position of electronics, electrostatic potential and energy state change in crystal pipeline
Carrier, prepare electronic memory and electronic logic circuit etc..
As the development of nanotechnology enables people to produce the structure and device of tens nano-precisions, power-assisted silicon device
The fast development of integrated circuit, the continuous improvement of integrated level, device size is smaller and smaller, and people are in nanoprocessing technological development
On the basis of have begun working on completely new devices field: single-electron device, wherein study most extensively, understand and most deep be
Single-electronic transistor has huge application value in microelectronic field, optoelectronic areas and quantum information field.
State of the transistor for logic analysis to finally return that is generally less than three, it can 0,1 two states are reflected as,
Eventually for leading most of IC logic application, etched circuit connection is mostly used between transistor unit, with micro- electricity
The raising of sub- device integration, the function element size on chip constantly reduces, but further decreases function element size more
The performance of highly integrated chip will become very unstable because of quantum fluctuation and heat dissipation the problems such as, and such building is so that single
The demand of electron transistor greatly increases.
Single-electronic transistor is because of its operation power small in size, integrated and extremely low without lead, its Highgrade integration
In the future can not substituted new device, however, channel length further shortens, drain induced barrier is reduced and mobility is unstable etc.
Short-channel effect occurs in succession, and is difficult effectively to inhibit, thus design holding can Highgrade integration under the premise of, can be rich
The Logic application ability of rich transistor, the electron transistor for strengthening circuit stability is that this field staff needs what is solved to ask
Topic.
Summary of the invention
The purpose of the present invention is to provide a kind of multipolar system honeycomb electronic transistor structures, by the electricity for designing honeycomb
Sub- transistor enriches the Logic application ability of transistor, enhances the drain induced barrier and circuit stability of integrated circuit, simultaneously
Six edge channels of electron crystal tube body and core channel constitute multi-signal state, carry more data and calculate and deposit
Storage solves the problems, such as that the Logic application ability of existing electronic transistor structures and circuit stability are insufficient.
In order to solve the above technical problems, the present invention is achieved by the following technical solutions:
The present invention is a kind of multipolar system honeycomb electronic transistor structures, including several electron crystal tube bodies, the electronics
Transistor body is positive hexagonal structure, and several electron crystal tube bodies form honeycomb structures；
Electron transistor body central portion is equipped with a core channel, two electron crystal tube body side junctions
It is etched with edge channel；
The edge channel is no resistance type edge channel or ladder by resistance type edge channel or secondary forceful electric power penetrating type edge channel or forceful electric power
Penetrating type edge channel；
The no resistance type edge channel includes silicon wafer wall, offers the first cutting in the silicon wafer wall, in first cutting
Offer one group of second cutting, in the first cutting and position that is located between one group of second cutting is equipped with charge measurement crystallite
Body pipe；
The ladder is equal by the structure feature of resistance type edge channel, secondary forceful electric power penetrating type edge channel and forceful electric power penetrating type edge channel
It is identical as the structure feature of no resistance type edge channel.
Further, tunnel oxide is filled in the first cutting and the second cutting on the no resistance type edge channel.
Further, the ladder by the first cutting on resistance type edge channel be filled with tunnel oxide, the ladder
By being separately filled with time strong electrical field in two the second cuttings on resistance type edge channel and can penetrate oxide skin(coating) and strong electrical field and can penetrate
Oxide skin(coating).
Further, tunnel oxide is filled in the first cutting on the secondary forceful electric power penetrating type edge channel, it is described secondary
Oxide skin(coating) can be penetrated filled with time strong electrical field in two the second cuttings on forceful electric power penetrating type edge channel.
Further, tunnel oxide, the forceful electric power are filled in the first cutting on the forceful electric power penetrating type edge channel
Oxide skin(coating) can be penetrated filled with strong electrical field in two the second cuttings on penetrating type edge channel.
Further, the silicon wafer wall is pure silicon crystal, and the silicon wafer wall week side is coated with insulating blanket.
The invention has the following advantages:
The present invention by design honeycomb electron transistor, on the one hand can continue keep can Highgrade integration, separately
On the one hand the Logic application ability for also enriching transistor, strengthens the drain induced barrier and circuit stability of integrated circuit, while electronics
The Charge sites of six edge channels and the permutation and combination of charge attribute of transistor body can form multi-signal state, and carrying is more
More data calculate and storage.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will be described below to embodiment required
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of structural schematic diagram of multipolar system honeycomb electron transistor of the invention；
Fig. 2 for no resistance type edge channel structural schematic diagram；
Fig. 3 is structural schematic diagram of the ladder by resistance type edge channel；
Fig. 4 is time structural schematic diagram of forceful electric power penetrating type edge channel；
Fig. 5 is the structural schematic diagram of forceful electric power penetrating type edge channel；
Fig. 6 is the variation schematic diagram of edge channel in embodiment two；
In attached drawing, parts list represented by the reference numerals are as follows:
1- electron crystal tube body, 2- edge channel, 101- core channel, 201- silicon wafer wall, the first cutting of 202-, 203-
Two cuttings, 204- charge measurement microtransistor, 205- tunnel oxide, 206- times strong electrical field can penetrate oxide skin(coating), and 207- is strong
Electric field can penetrate oxide skin(coating).
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
It please refers to shown in Fig. 1-2, the present invention is a kind of multipolar system honeycomb electronic transistor structures, including several electron crystals
Tube body 1, electron crystal tube body 1 are positive hexagonal structure, and several electron crystal tube bodies 1 form honeycomb structures；
1 central part of electron crystal tube body is equipped with a core channel 101, and two electron crystal tube bodies, 1 side junction is carved
Erosion has edge channel 2；
Edge channel 2 is no resistance type edge channel；
No resistance type edge channel includes silicon wafer wall 201, offers the first cutting 202 in silicon wafer wall 201, in the first cutting 202
Offer one group of second cutting 203, in the first cutting 202 and position that is located between one group of second cutting 203 is equipped with charge survey
Measure microtransistor 204.
Wherein as shown in Fig. 2, without tunnel is filled in the first cutting 202 and the second cutting 203 on resistance type edge channel
Oxide 205.
Wherein, silicon wafer wall 201 is pure silicon crystal, and 201 weeks sides of silicon wafer wall are coated with insulating blanket.
Embodiment two
It please refers to shown in Fig. 1 and Fig. 3, the present invention is a kind of multipolar system honeycomb electronic transistor structures, including several electronics
Transistor body 1, electron crystal tube body 1 are positive hexagonal structure, and several electron crystal tube bodies 1 form honeycomb structures；
1 central part of electron crystal tube body is equipped with a core channel 101, and two electron crystal tube bodies, 1 side junction is carved
Erosion has edge channel 2；
Edge channel 2 is ladder by resistance type edge channel；
Ladder is included silicon wafer wall 201 by resistance type edge channel, and the first cutting 202, the first cutting are offered in silicon wafer wall 201
Offer one group of second cutting 203 on 202, in the first cutting 202 and position that is located between one group of second cutting 203 is equipped with electricity
Lotus measures microtransistor 204.
Wherein as shown in figure 3, ladder by the first cutting 202 on resistance type edge channel be filled with tunnel oxide 205, rank
Ladder can be penetrated oxide skin(coating) 206 and forceful electric power by time strong electrical field is separately filled in two the second cuttings 203 on resistance type edge channel
Field can penetrate oxide skin(coating) 207.
Wherein, silicon wafer wall 201 is pure silicon crystal, and 201 weeks sides of silicon wafer wall are coated with insulating blanket.
Wherein as shown in figures 1 to 6, control switch connects the core channel 101 on two neighboring electron crystal tube body 1
Enter anode and access cathode, connected edge channel 2 generates electric field, can penetrate 2 side of edge channel when electric-field enhancing reaches charge
When oxide skin(coating), charge is rested between 2 two oxide skin(coating)s of edge channel, the change of the state of charge detected above edge channel 2
Change by " write-in "；
When electric field continues enhancing, and charge is made to penetrate two layers of oxide skin(coating) of edge channel 2, two electron crystal tube bodies 1 it
Between realize circuit communication, the variation of the state of charge detected above edge channel 2 is " erased ".
Electron crystal tube body 1 has 6 edge channels 2, if being all ladder by resistance type edge channel, it includes electric charge number
(the charge attribute of edge channel can be by adjusting two neighboring transistor electrodes attribute and electric field strength " write-in " and " erasing " electricity
Lotus), the combination of Charge sites attribute may make the single honeycomb electronic transistor structures maximum to possess 63 kinds and have value signal state,
See Table 1 for details；
The signal condition quantity of the single multipolar system honeycomb electron transistor of table 1
| Charge number | Charge position number | Signal condition number |
| 0 | —— | —— |
| 1 | C (6,1)=6 | 6 |
| 2 | C (6,2)=15 | 15 |
| 3 | C (6,3)=20 | 20 |
| 4 | C (6,4)=15 | 15 |
| 5 | C (6,5)=6 | 6 |
| 6 | C (6,6)=1 | 1 |
It is assumed that 2 top charge of edge channel measures negative electrical charge to indicate (nothing) with " 0 ", can measure positive charge is indicated with " 1 ", letter
Number state determines by charge position, and with 6 edge channels 2 there are two charge, there is its whole signal condition in 6 edge channels
{000011}、{000110}、{001100}、{011000}、{110000}、{000101}、{001010}、{010100}、
{ 101000 }, { 001001 }, { 010010 }, { 100100 }, { 010001 }, { 100010 }, { 100001 } this 15 kinds of signal conditions.
If adjacent for single-electronic transistor, charge measurement microtransistor can measure the positive and negative attribute of charge, this makes
Single single electron honeycomb transistor arrangement maximum possess there is value signal state to explode to be 728 kinds, be detailed in table two；
The signal condition quantity of the single multipolar system single electron honeycomb transistor of table 2
| Charge number | Charge position number | Entrained charge combinations of attributes number | State number |
| 0 | —— | —— | —— |
| 1 | C (6,1)=6 | 21 | 12 |
| 2 | C (6,2)=15 | 22 | 60 |
| 3 | C (6,3)=20 | 23 | 160 |
| 4 | C (6,4)=15 | 24 | 240 |
| 5 | C (6,5)=6 | 25 | 192 |
| 6 | C (6,6)=1 | 26 | 64 |
It is assumed that indicating (nothing) with " 0 " when 2 top of door does not measure charge, it is to be indicated with " 1 " that charge, which measures negative electrical charge,
Measure positive charge is indicated with " 2 ", and signal condition is codetermined by charge position and entrained charge attribute, equally with 6
Edge channel 2 there are two charge for example, the whole signal condition of its in 6 edge channels 2 have { 000011 }, { 000110 },
{001100}、{011000}、{110000}、{000101}、{001010}、{010100}、{101000}、{001001}、
{010010}、{100100}、{010001}、{100010}、{100001}、{000012}、{000120}、{001200}、
{012000}、{120000}、{000102}、{001020}、{010200}、{102000}、{001002}、{010020}、
{100200}、{010002}、{100020}、{100002}、{000021}、{000210}、{002100}、{021000}、
{210000}、{000201}、{002010}、{020100}、{201000}、{002001}、{020010}、{200100}、
{020001}、{200010}、{200001}、{000022}、{000220}、{002200}、{022000}、{220000}、
{000202}、{002020}、{020200}、{202000}、{002002}、{020020}、{200200}、{020002}、
{ 200020 }, { 200002 } this 60 kinds of signal conditions.
Embodiment three
It please refers to shown in Fig. 1 and Fig. 4, the present invention is a kind of multipolar system honeycomb electronic transistor structures, including several electronics
Transistor body 1, electron crystal tube body 1 are positive hexagonal structure, and several electron crystal tube bodies 1 form honeycomb structures；
1 central part of electron crystal tube body is equipped with a core channel 101, and two electron crystal tube bodies, 1 side junction is carved
Erosion has edge channel 2；
Edge channel 2 is time forceful electric power penetrating type edge channel；
Secondary forceful electric power penetrating type edge channel includes silicon wafer wall 201, and the first cutting 202, the first cutting are offered in silicon wafer wall 201
Offer one group of second cutting 203 on 202, in the first cutting 202 and position that is located between one group of second cutting 203 is equipped with electricity
Lotus measures microtransistor 204.
Wherein as shown in figure 4, being filled with tunnel oxide 205 in the first cutting 202 on secondary forceful electric power penetrating type edge channel,
Oxide skin(coating) 206 can be penetrated filled with time strong electrical field in two the second cuttings 203 on secondary forceful electric power penetrating type edge channel.
Wherein, silicon wafer wall 201 is pure silicon crystal, and 201 weeks sides of silicon wafer wall are coated with insulating blanket.
Example IV
It please refers to shown in Fig. 1 and Fig. 5, the present invention is a kind of multipolar system honeycomb electronic transistor structures, including several electronics
Transistor body 1, electron crystal tube body 1 are positive hexagonal structure, and several electron crystal tube bodies 1 form honeycomb structures；
1 central part of electron crystal tube body is equipped with a core channel 101, and two electron crystal tube bodies, 1 side junction is carved
Erosion has edge channel 2；
Edge channel 2 is forceful electric power penetrating type edge channel；
Forceful electric power penetrating type edge channel includes silicon wafer wall 201, and the first cutting 202, the first cutting are offered in silicon wafer wall 201
Offer one group of second cutting 203 on 202, in the first cutting 202 and position that is located between one group of second cutting 203 is equipped with electricity
Lotus measures microtransistor 204.
Wherein as shown in figure 5, the first cutting 202 on forceful electric power penetrating type edge channel is interior filled with tunnel oxide 205, by force
Oxide skin(coating) 207 can be penetrated filled with strong electrical field in two the second cuttings 203 on electric penetrating type edge channel.
Wherein, silicon wafer wall 201 is pure silicon crystal, and 201 weeks sides of silicon wafer wall are coated with insulating blanket.
In the description of this specification, the description of reference term " one embodiment ", " example ", " specific example " etc. means
Particular features, structures, materials, or characteristics described in conjunction with this embodiment or example are contained at least one implementation of the invention
In example or example.In the present specification, schematic expression of the above terms may not refer to the same embodiment or example.
Moreover, particular features, structures, materials, or characteristics described can be in any one or more of the embodiments or examples to close
Suitable mode combines.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (6)
1. a kind of multipolar system honeycomb electronic transistor structures, it is characterised in that: described including several electron crystal tube bodies (1)
Electron crystal tube body (1) is positive hexagonal structure, and several electron crystal tube bodies (1) form honeycomb structures；
Electron crystal tube body (1) central part is equipped with a core channel (101), two electron crystal tube body (1) sides
Side junction is etched with edge channel (2)；
The edge channel (2) is worn for no resistance type edge channel or ladder by resistance type edge channel or secondary forceful electric power penetrating type edge channel or forceful electric power
Saturating type edge channel；
The no resistance type edge channel includes silicon wafer wall (201), is offered the first cutting (202) in the silicon wafer wall (201), described
One group of second cutting (203) is offered in first cutting (202), first cutting (202) is interior and is located at one group of second cutting
(203) position between is equipped with charge measurement microtransistor (204)；
The ladder by resistance type edge channel, secondary forceful electric power penetrating type edge channel and forceful electric power penetrating type edge channel structure feature with nothing
The structure feature of resistance type edge channel is identical.
2. a kind of multipolar system honeycomb electronic transistor structures according to claim 1, which is characterized in that the no resistance type side
Tunnel oxide (205) are filled in the first cutting (202) and the second cutting (203) on channel.
3. a kind of multipolar system honeycomb electronic transistor structures according to claim 1, which is characterized in that the ladder is obstructed
Tunnel oxide (205) are filled in the first cutting (202) on type edge channel, the ladder is by two on resistance type edge channel
Oxide skin(coating) can be penetrated by being separately filled with time strong electrical field in second cutting (203) and can penetrating oxide skin(coating) (206) and strong electrical field
(207)。
4. a kind of multipolar system honeycomb electronic transistor structures according to claim 1, which is characterized in that the secondary forceful electric power is worn
Tunnel oxide (205) are filled in the first cutting (202) on saturating type edge channel, on the secondary forceful electric power penetrating type edge channel
Oxide skin(coating) (206) can be penetrated filled with time strong electrical field in two the second cuttings (203).
5. a kind of multipolar system honeycomb electronic transistor structures according to claim 1, which is characterized in that the forceful electric power penetrates
Tunnel oxide (205) are filled in the first cutting (202) on type edge channel, two on the forceful electric power penetrating type edge channel
Oxide skin(coating) (207) can be penetrated filled with strong electrical field in second cutting (203).
6. a kind of multipolar system honeycomb electronic transistor structures according to claim 1, which is characterized in that the silicon wafer wall
It (201) is pure silicon crystal, all sides of the silicon wafer wall (201) are coated with insulating blanket.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338120A (en) * | 1998-12-30 | 2002-02-27 | 亚历山大·米哈伊洛维奇·伊尔雅诺克 | Quantum-size electronic devices and operating conditions thereof |
| EP2264653A1 (en) * | 2009-06-19 | 2010-12-22 | Hitachi Ltd. | Qubit device |
| US20170288076A1 (en) * | 2016-03-31 | 2017-10-05 | Hitachi, Ltd. | Silicon-based quantum dot device |
| CN109643730A (en) * | 2016-09-30 | 2019-04-16 | 英特尔公司 | Single-electronic transistor (SET) and QUBIT detector device based on SET |
-
2019
- 2019-07-25 CN CN201910676388.XA patent/CN110335897B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338120A (en) * | 1998-12-30 | 2002-02-27 | 亚历山大·米哈伊洛维奇·伊尔雅诺克 | Quantum-size electronic devices and operating conditions thereof |
| EP2264653A1 (en) * | 2009-06-19 | 2010-12-22 | Hitachi Ltd. | Qubit device |
| US20170288076A1 (en) * | 2016-03-31 | 2017-10-05 | Hitachi, Ltd. | Silicon-based quantum dot device |
| CN109643730A (en) * | 2016-09-30 | 2019-04-16 | 英特尔公司 | Single-electronic transistor (SET) and QUBIT detector device based on SET |
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