CN110331379A - 一种单晶perc电池正面多层镀膜制备方法 - Google Patents
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Abstract
本发明涉及单晶PERC电池正面多层镀膜领域。一种单晶PERC电池正面多层镀膜制备方法，在单晶PERC电池正面镀膜形成二氧化硅/氮化硅/氮化硅/氮氧化硅/二氧化硅结构，整体膜厚为80‑85纳米，折射率1.9‑2.03。通过增加二氧化硅和氮氧化硅膜层结构，增加正面的钝化效果，并增强不同波长的吸收，从而提高单晶PERC电池效率。
Description
技术领域
本发明涉及单晶PERC电池正面多层镀膜领域。
背景技术
电池镀减反射膜工艺是电池制造过程的关键工序，主要作用在于降低表面反射率，增加光的吸收。目前单晶电池PERC正面多层镀膜工艺多为三层SINx结构，但是SINx与基底的晶格失配度较大，不能充分的饱和硅片表面的悬挂件，无法对硅片形成较好的界面钝化，因此无法达到最优降低反射率状态。
发明内容
本发明所要解决的技术问题是：如何降低反射率及界面缺陷，进一步增加正面钝化效果，提高单晶电池PERC效率。
本发明所采用的技术方案是：一种单晶PERC电池正面多层镀膜制备方法，在单晶PERC电池正面镀膜形成二氧化硅/氮化硅/氮化硅/氮氧化硅/二氧化硅结构，整体膜厚为80-85纳米，折射率1.9-2.03。
第一层二氧化硅膜工艺条件为，SIH4流量为850-950sccm，N2O流量为5000-5400sccm，压力为1300-1600torr，射频功率为4000-5000watt，时间为50-80s，温度为490-520℃。
第二层氮化硅膜工艺条件为，NH3流量为5000-5500sccm，SIH4流量为1000-1500sccm，压力为1600-1700torr，射频功率为6000-7000watt，时间为50-80s，温度为490-520℃。
第三层氮化硅膜工艺条件为，NH3流量为7000-8000sccm，SIH4 流量为700-800sccm，压力为1600-1700torr，射频功率为7000-8000watt，时间为320-330s，温度为490-520℃
第四层氮氧化硅膜工艺条件为，其中NH3流量为2500-3000sccm， SIH4流量为500-600sccm， N2O 流量为2500-3000sccm，压力为1600-1700torr，射频功率为5000-6000watt,时间为250-300s，温度为490-520℃。
第五层二氧化硅膜，其中SIH4流量为400-500sccm ，N2O 流量为4500-5000sccm，压力为1600-1700torr，射频功率为4000watt，时间为100s温度为490-520℃。
本发明的有益效果是：二氧化硅较氮化硅致密度高，钝化效果更好，而且二氧化硅/氮化硅叠层膜可以避免光伏组件在使用过程中因电诱导衰减现象造成电池效率大幅衰减。而SIOxNy（x和y分别为对应原子数量，本分子式中x为氧原子个数，y为氮原子个数）是SIO2和SINx的中间相，具有良好的钝化增透特性，同时SIOxNy也含有大量的氢原子（反应生成大量的氢原子溶解在SIOxNy中），可以实现良好的钝化效果，氧的存可以在硅表面获得较好的界面质量。因此设计膜的结构为：二氧化硅/氮化硅/氮化硅/氮氧化硅/二氧化硅。通过增加二氧化硅和氮氧化硅膜层结构，增加正面的钝化效果，并增强不同波长的吸收，从而提高单晶PERC电池效率。
具体实施方式
现有的PERC电池正面多层镀膜为三层氮化硅结构，膜厚为79-82纳米，折射率为2.05-2.08，但是SINx与基底的晶格失配度较大，不能充分的饱和硅片表面的悬挂件，无法对硅片形成较好的界面钝化，因此无法达到最优降低反射率状态。
本发明采用在单晶PERC电池正面镀膜形成二氧化硅/氮化硅/氮化硅/氮氧化硅/二氧化硅结构，整体膜厚为80-85纳米，折射率1.9-2.03。通过形成二氧化硅/氮化硅和氮氧化硅/二氧化硅提高钝化增透特性，同时降低了界面缺陷，从而增加正面的钝化效果，并增强不同波长的吸收，达到提高单晶PERC电池效率。
叠层膜的具体实现方式主要包括以下五个步骤：
第一步：制备第一层二氧化硅膜，其中SIH4流量为850-950sccm，N2O流量为5000-5400sccm，压力为1300-1600torr，射频功率为4000-5000watt，时间为80s，温度为490-520℃，膜厚度约为8纳米，本层膜的目标是形成硅和氧化硅的均匀过渡，形成良好的过渡界面降低反射率；
第二步：制备第二层氮化硅膜，其中NH3流量为5000-5500sccm，SIH4流量为1000-1500sccm，压力为1600-1700torr，射频功率为6000-7000watt，时间为80s，温度为490-520℃，膜厚度约为8纳米，本层膜的目的是形成二氧化硅/氮化硅过渡层，降低反射率；
第三步：制备第三层氮化硅膜，NH3流量为7000-8000sccm，SIH4 流量为700-800sccm，压力为1600-1700torr，射频功率为7000-8000watt，时间为330s，温度为490-520℃，膜厚度约为33纳米，形成减反射膜，增强不同波长的吸收；
第四步，制备第四层氮氧化硅膜，其中NH3流量为2500-3000sccm， SIH4流量为500-600sccm， N2O 流量为2500-3000sccm，压力为1600-1700torr，射频功率为5000-6000watt,时间为250s，温度为490-520℃，膜厚度约为25纳米，增加正面的钝化效果，并增强不同波长的吸收；
第五步，制备第五层二氧化硅膜，其中SIH4流量为400-500sccm ，N2O 流量为4500-5000sccm，压力为1600-1700torr，射频功率为4000watt，时间为100s温度为490-520℃，膜厚度约为10纳米，增加正面的钝化效果，并增强不同波长的吸收，从而提高单晶PERC电池效率。
本实施例整体膜厚约84纳米，折射率1.95，有着良好的界面质量，较普通的三层氮化硅膜，电池整体效率能够提升0.5-1.5%以上。
Claims (6)
1.一种单晶PERC电池正面多层镀膜制备方法，其特征在于：在单晶PERC电池正面镀膜形成二氧化硅/氮化硅/氮化硅/氮氧化硅/二氧化硅结构，整体膜厚为80-85纳米，折射率1.9-2.03。
2.根据权利要求1所述的一种单晶PERC电池正面多层镀膜制备方法，其特征在于：第一层二氧化硅膜工艺条件为，SIH4流量为850-950sccm，N2O流量为5000-5400sccm，压力为1300-1600torr，射频功率为4000-5000watt，时间为50-80s，温度为490-520℃。
3.根据权利要求1所述的一种单晶PERC电池正面多层镀膜制备方法，其特征在于：第二层氮化硅膜工艺条件为，NH3流量为5000-5500sccm，SIH4流量为1000-1500sccm，压力为1600-1700torr，射频功率为6000-7000watt，时间为50-80s，温度为490-520℃。
4.根据权利要求1所述的一种单晶PERC电池正面多层镀膜制备方法，其特征在于：第三层氮化硅膜工艺条件为，NH3流量为7000-8000sccm，SIH4 流量为700-800sccm，压力为1600-1700torr，射频功率为7000-8000watt，时间为320-330s，温度为490-520℃。
5.根据权利要求1所述的一种单晶PERC电池正面多层镀膜制备方法，其特征在于：第四层氮氧化硅膜工艺条件为，其中NH3流量为2500-3000sccm， SIH4流量为500-600sccm， N2O流量为2500-3000sccm，压力为1600-1700torr，射频功率为5000-6000watt ,时间为250-300s，温度为490-520℃。
6.根据权利要求1所述的一种单晶PERC电池正面多层镀膜制备方法，其特征在于：第五层二氧化硅膜，其中SIH4流量为400-500sccm ，N2O 流量为4500-5000sccm，压力为1600-1700torr，射频功率为4000watt，时间为100s温度为490-520℃。
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| CN113299768A (zh) * | 2021-05-27 | 2021-08-24 | 天津爱旭太阳能科技有限公司 | 太阳能电池和太阳能电池的制作方法 |
| CN114361265A (zh) * | 2021-12-22 | 2022-04-15 | 天津爱旭太阳能科技有限公司 | 一种perc电池的减反射层及其制作方法和电池 |
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| CN104952941A (zh) * | 2015-04-22 | 2015-09-30 | 横店集团东磁股份有限公司 | 一种多层异质减反射膜太阳能电池 |
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| CN104952941A (zh) * | 2015-04-22 | 2015-09-30 | 横店集团东磁股份有限公司 | 一种多层异质减反射膜太阳能电池 |
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| CN113299768A (zh) * | 2021-05-27 | 2021-08-24 | 天津爱旭太阳能科技有限公司 | 太阳能电池和太阳能电池的制作方法 |
| CN114361265A (zh) * | 2021-12-22 | 2022-04-15 | 天津爱旭太阳能科技有限公司 | 一种perc电池的减反射层及其制作方法和电池 |
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