CN110325840B - Integrated plasma photon biosensor and setting method and using method based on same - Google Patents
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Abstract
The present invention relates to an integrated plasmonic photonic biosensor comprising a first optical mach-zehnder interferometric sensor having a large free spectral range, wherein plasmonic waveguide (107) films or mixing grooves are merged into a planar integrated Si-based photonic biosensor and a method of use thereof 3 N 4 A transducer element on a photonic waveguide, and a second optical Mach-Zehnder interferometric sensor, both optical Mach-Zehnder interferometric sensors including a first thermo-optic phase shifter (104) and a second thermo-optic phase shifter (106) that function as a variable optical attenuator VOA to bias the first and second optical Mach-Zehnder interferometric sensors in an optimal manner.
Description
Technical Field
The present invention relates to an apparatus for low-cost, large-scale fabrication of planar integrated photonic biosensors, and more particularly to a method for monolithically co-integrating CMOS photonic and plasma components with an optimally biased MZI interferometer that unprecedentedly improves sensor sensitivity with low fabrication cost.
Background
Several solutions have been proposed to solve the technical problem of high sensitivity biosensing. However, the required manufacturing process is complex, costly, and the large system size or moderate sensitivity still prevents widespread commercial exploitation. All of these characteristics in the sensing device should be addressed simultaneously prior to entering the market.
Jiri Homola, sinclair s.yeea and hunter Gauglitzb in surface plasmon resonance sensor: comments, sensors and actuators B: the sensitivity of Surface Plasmon Resonance (SPR) to changes in refractive index due to the strong optical field on metal surfaces has led to the development of SPR sensing systems for the detection of biological agents, as suggested in journal of chemistry, vol.54, pp.3-15, no. 1/2, 1999. Those sensors typically use an optical prism to couple light into a surface plasmon mode on a flat gold film. However, the large size of these systems has severely hampered their miniaturization, low cost manufacturing with planar monolithic chips, and their use in point-of-care testing and other portable applications.
Recently, the exploratory development of nano-fabrication technology has made the plasmon waveguide device carrying propagating surface plasmon integrated as a biosensor, but the sensing performance is low in terms of sensitivity. To improve the performance of plasmonic sensors, plasmonic waveguides are integrated in mach-zehnder interferometers, known as "MZIs", as well as other interferometric structures, to exploit the phase dependence of the plasmonic waveguide optical field to change the refractive index of the analyte under test. The american society for optics-optical quick report 23, vol.20, pp 25688-25699 (2015), doi.org/10.1364/oe.23.025688[ Wosinski ] demonstrated mach-zehnder interferometers with gold-slotted waveguides integrated on silicon. However, the optical sensitivity can only reach the order of 1061/nm/RIU due to the lack of optimum biasing means to optimize the differential length and power imbalance between the upper and lower arms when combined with a small free spectral range MZI. A similar approach using hybrid plasma slot waveguides is proposed by m.z. alam, f.bahra, j.s.airgison and m.mojamedi in the american society of electrical and electronics engineers-journal of optics and photonics-paper entitled "analyzing and optimizing hybrid plasma waveguides for use as biosensing platforms": vol 6, 4, month 8 2014, DOI:10.1109/jphot.2014.2331232, however, the design is focused on a plasma waveguide that lacks any MZI balance components and related performance criteria.
The patent document US2005/0018949A1 discloses an MZI sensor using plasma, which is applied only within the micrometer-scale dimension (2-20 μm), thus allowing only micrometer-scale integration, which cannot be achieved at a smaller scale. In addition, said document does not disclose the coupling efficiency between the plasma and the photonic waveguide, which is expected to be low, with very high losses of the MZI branch of the integrated plasma waveguide. This is similar to the MZI lower branch lacking a biasing component and therefore the document does not disclose that the resolution is expected to be low during the sensing measurement, thus limiting the sensitivity and detection limit of the sensor.
Patent EP 2 214 049 B1 uses a specially designed photonic MZI that relies on an evanescent optical field, but requires a very long interaction arm in the MZI sensing branch. This, in combination with the use of CMOS incompatible materials, such as polymers, prevents further miniaturization of the device in the micro or nano scale and CMOS factory mass fabrication. Like the above-described device, this sensor also does not use the balancing components required for perfectly balancing the MZI sensor, and at the same time, it requires a large sensor structure in order to satisfy the sensitivity requirements, which limits mass production, thus preventing the reduction of the production cost of the sensor chip.
Furthermore, yongkang Gao, qiaoqiang Gan, zheming Xin, xuanhong Cheng and Filbert J Bartoli 2011, 12/18 in "U.S. chemical Association's journal of China" 5 (12): 9836-44 to papers mach zehnder interferometer for ultrasensitive on-chip biosensing, kirill e.zinoviev; ana Bellen Gonzalez-Guerrero; carlos Dominguez; laura m. Lechouga, 2011, journal of lightwave technology, volume 29, phase 13, pages 1926-1930, DOI:10.1109/jlt.2011.2150734, the article integrated dual mode waveguide interferometric biosensor for label-free analysis, each proposes a new type of interferometer known as a BiModal interferometer. This new interferometer uses photonic and plasmonic structures with the goal of enhancing thermal stability and/or deviating from the ideal 50:50 separation ratio. While they provide a compact solution, the requirement for dual mode operation prevents the expansion of the sensing area and the precise balancing of the two MZI branches for optimum resolution.
Jianghai Wo et al published a paper "refractive index sensor using ultra-fine fiber Mach-Zehnder interferometers" in American society for optics, vol.37, pp.1-69 (2012), doi.org/10.1364/OL.37.000067, volume 37, and reported a microfiber refractive index sensor using MZI structures. The proposed design optimizes the MZI sensor operation and the 6cm optical microfiber using fiber, manually controlled off-the-shelf optical delay lines and attenuator components. The paper does not disclose a method of developing the proposed design and implementing integrated attenuator and delay lines in a planar integrated chip. Furthermore, using 6cm long microfibers as sensor transducers does not allow for further miniaturization (millimeter or micron scale) and large scale manufacturing.
Stewart a. Clark, brian Culshaw, emma j.c.dawnay, and Ian e.day in proc.spie 3936, integrated optics IV, (3/24/2000); DOI:10.1117/12.379940 published as SIMOX materials thermo-optic phase modulator discloses a method of using a planar electrically controlled thermo-optic phase shifter as a phase modulating element in an MZI structure. WO 00/73848 A2 (JDS UNIPHASE CORP [ US ]; mcBrien Gregory J [ US ]; kissa Karl M [ US ]; hal) (12.12.7.2000) (2000-12-07) also discloses a similar approach to combining electrically controlled phase modulators in nested MZI structures. However, neither solution describes the sensing element or sensing function.
WO 00/73848 A2 discloses in fig. 3 a nested mach zehnder structure with electrodes for controlling the phase and balance of the field in the interferometer arms. However, the disclosed device is a modulator rather than a sensor and does not include a thermo-optical phase shifter.
Disclosure of Invention
The present invention aims to solve the above mentioned various problems simultaneously by proposing an ultrasensitive biosensor device that can be integrated in a structure based on micro-scale chips by using a simple, low-cost manufacturing method.
A sensing technology capable of accurately reading a target substance down to a molecular level in real time will facilitate early diagnosis and prevention of diseases, bedside detection applications, and accurate environmental monitoring. Plasmonic photonic technology has great potential for applications in sensing because of its ability to confine light to nanoscale dimensions and its excellent sensitivity versus interaction length relationship. Because plasmas have unprecedented sensitivity per unit length and are able to coexist in harmony with low-loss photonics, electron-nanoscale, and metal-biochemical mechanisms (biocompatibility), plasmas will enable new capabilities of biosensor systems in terms of performance, versatility, and compactness.
At the same time, the plasma waveguide and Si are selectively combined 3 N 4 The base photon can utilize the CMOS back end fabrication process of an electronic IC factory to fabricate integrated photonic sensors at near low cost and large scale. While the added value of plasmonic photons has been practically proven, there has been no organizational effort to convert integrated plasmonic sensors from high loss and isolation technologies to high value practical CMOS compatible devices. In short, the harmonically and balanced mixing of CMOS compatible photonic plasmas with photons in an integrated planar chip promises to transform expensive and complex technologies into plasmonic photonic sensors, enabling a real technological revolution for plasmonic Photonic Integrated Circuit (PIC) based sensors with many unprecedented capabilities and functionalities, meeting various industrial needs.
The present invention therefore aims to solve the need for an integrated sensing device (chip), i.e. a compact sensor, with unprecedented optical sensitivity, temporarily up to about 150000nm/RIU, using a plasmonic waveguide in an optimally balanced photonic MZ interferometer with a free spectral range of wavelengths from tens to hundreds of nanometers, in particular, which can be mass produced by CMOS manufacturers at low cost, especially by monolithic integration, typically for electronic integrated circuits. In this respect, according to the present invention, a sensor design, a component manufacturing method, an apparatus and a sensing method are provided, respectively.
In addition, the invention provides an optical Mach-Zehnder interferometer MZI biosensor which adopts nano-scale Si integrated on a CMOS chip in a plane 3 N 4 Photonic waveguides and nanoscale plasmonic waveguides. The present invention is directed to chemical and/or physical quantity detection by utilizing known refractive index changes that occur in an interferometric plasma waveguide segment when the plasma waveguide is covered with the analyte or gas under test. In addition, i.e. a second object, is that the mach-zehnder interferometer MZI is used as a variable optical attenuator VOA together with an optical phase shifter and that the separate phase shifter is included in one branch, e.g. the interferometer lower branch, in order to achieve an optimal balance of the sensor and a measurement sensitivity that is much lower than in the prior art. The sensor design is combined with low cost materials and manufacturing processes to enable large scale manufacturing.
The present invention provides a method for manufacturing an ultra-sensitive biosensor chip for detecting chemical, biochemical or other physical quantities of a liquid or gas on a large scale at low cost.
Thus, according to the present invention, there is provided a photonic and plasma waveguide-assisted ultrasensitive biosensor device, which is arranged in a specially designed MZI structure, and which can be manufactured at low cost and in large scale using a factory. In particular, in accordance with the present invention, an apparatus is provided that includes photonic and novel plasmonic components for nanoscale integration.
According to a main embodiment of the device according to the invention, the device comprisesAn optical interferometric sensor, which is a Mach-Zehnder interferometric MZI sensor having a free spectral range of wavelengths from a few tens of nanometers to a few hundreds of nanometers, wherein a plasma waveguide, in particular a thin film or a mixing channel, is integrated as a plane in Si 3 N 4 Transducer element incorporation on a photonic waveguide, further comprising
A set of photonic waveguides with high-index silicon nitride strips arranged in a low-index oxide matrix SiO 2 And low refractive index oxide capping layer LTO
-an optical coupling structure arranged at both ends of the sensor for optical input/output;
-an optical splitter and an optical combiner for optical splitting at a first connection point of said MZI sensors and optical combining at a second connection point of said first MZI sensors, in particular at a star connection, a directional coupler or a multimode interference coupler (MMI), respectively; and
-a plasmonic waveguide disposed in the upper arm of the sensor for limiting light propagation by coupling surface plasmons (SPP) at the metal-analyte interface. The device notably comprises a further significant optical interference element of the Mach-Zehnder type arranged in the reference arm of the MZI sensor, both of said MZI elements comprising a thermo-optical heater for optimally biasing the interferometer, the device further comprising an integrated chip, a variable optical attenuator VOA with said additional second MZI, an optical splitter for setting the optical splitting at a first connection point of said additional second MZI and an optical combiner for optical combining at a second connection point of said additional second MZI,
-a set of thermo-optical phase shifters for tuning the phase of the optical signal in the reference arm of each of said MZIs; wherein the thermo-optic phase shifter is formed by depositing at least one or two metal strips parallel to each other on top of a length of a photonic waveguide and along the propagation direction of light.
Thus, unlike the closest prior art, the device according to the invention differs in that it comprises these remarkable features described above, in particular the other mach-zehnder type optical interferometer, both comprising a thermo-optical heater acting as a bias unit and as a variable optical attenuator of the interferometer; a VOA having the second MZI2 nested within the MZI1 sensor; and a set of thermo-optic phase shifters.
The technical effect of these features is that it consists of a second interferometer MZI2 embedded in a first sensor, with a thermo-optical phase shifter arranged in its reference arm, the MZI2 acting as a variable optical attenuator VOA controlled by a thermal sensor drive signal. The VOA controls the signal strength in the first interferometric sensor reference arm. Another thermo-optic shifter in the first interferometric sensor reference arm allows the phase of the beam in the reference arm to be controlled. Thus, the field phase and amplitude of the interferometer MZI1 reference arm may be controlled so that MZI1 may be balanced and biased by an electrical signal at the desired operating point.
Thus, the problem to be solved by the closest prior art XP011552586 is to control the balance and bias points of the interferometric sensor. The solution provided by the device proposed according to the invention is remarkable in that XP001572448 of jian ghai WO ET AL also discloses a VOA and a phase shifter arranged in the reference arm for controlling the interferometric sensor bias point, detailed information see "tunable ODL" and attenuator and related contents in fig. 1 of this document. However, the latter does not disclose a tuneable ODL comprising a thermo-optical phase shifter, nor an attenuator made by a mach-zehnder interferometer comprising another thermo-optical element. This document therefore also discloses a solution to the technical problem, but without missing the features according to the main embodiment shown above. In fact, unlike the planar technology described in the closest prior art XP011552586, the interferometer according to XP001572448 is fiber-based. Therefore, how to realize the adjustable delay and to arrange the attenuators shown in other documents in the planar waveguide sensor shown in the closest art is not described herein. XP55414114 discloses embodiments of phase shifters in planar waveguide technology involving thermo-optic elements, and variable optical attenuators in mach-zehnder structures incorporating thermo-optic elements, see the cited paragraphs. In summary, in said closest prior art XP011552586, in order to implement the present invention, the fiber component functionality of another document, obtained using the planar waveguide technology indicated by XP55414114, should be implemented.
One aspect of the present invention is that it has better photosensitivity, e.g., optical resonance shift and refractive index unit change over a plasmonic waveguide, compared to prior art devices due to the strong light-to-substance interaction with SPP waveguides (from 10 nm to 100 nm) and optimal biasing of MZ interference structures. The smaller the optical path difference between the interferometer sensing and reference arms, the larger the free spectral range becomes, resulting in a higher sensitivity of the interferometer to the refractive index of the analyte on the plasmon waveguide. According to the present invention, an overall structure and an optimal biasing method are provided.
It is another aspect of the present invention to provide a method for monolithically integrating nanoscale SPP waveguides (thin film or hybrid photonic grooves), silicon nitride photonic waveguides, and thermo-optic phase shifters with metal heaters in an inlay MZ interference structure to achieve high sensitivity of recording while achieving low manufacturing costs.
It is yet another aspect of the present invention to provide a method for monolithically integrating nanoscale SPP waveguides (thin film or hybrid photonic trenches), nanoscale silicon nitride photonic waveguides and thermo-optic phase shifters in compact MZI structures using CMOS compatible materials (oxides, metals, dielectrics) and low cost mass fabrication of sensor chips.
The present invention also relates to an apparatus, particularly wherein another aspect of the invention relates to photonic and plasma waveguide designs, particularly designs for deploying hybrid slot SPP waveguides, which allow simultaneous deposition of plasma slot waveguides and thermo-optic phase shifter metal contacts on the same metal with a single mask stripping process, thus further reducing overall manufacturing costs.
Yet another aspect of the present invention provides an ultra-sensitive biosensor array device, which can be manufactured at low cost in a large-scale manufacturing plant, assisted by wavelength division multiplexing WDM technology and photonic and plasma waveguides arranged in a specially designed MZI structure array. The array will be able to be used as a single biosensor device to simultaneously detect physical quantities of analytes or gases under test, with the same sensitivity and low production cost.
In summary, thanks to the present invention, a device is provided which comprises photonic and novel plasmonic components for nanoscale integration, whereas the above cited document US2005/0018949A1 only allows microscale integration. In addition, said document does not disclose the coupling efficiency between the plasma and the photonic waveguide, which is expected to be low, the loss of the MZI branch of the integrated plasma waveguide being very high. This is similar to the MZI lower branch lacking a biasing component and therefore the document does not disclose that the resolution is expected to be low during the sensing measurement, thus limiting the sensitivity and detection limit of the sensor. It is expected that low resolution will result during sensing measurements, limiting the sensitivity and detection limit of the sensor. In fact, in order to be able to manufacture miniaturized sensor chips at low cost, monolithic integration and nanoscale geometries should be used to solve the above-mentioned problems. Thanks to the present invention, these problems are solved by disclosing how to perfectly balance an ultra-sensitive sensing MZI with an MZI sensor comprising a plasma sensing element and an additional photonic MZI, which employs monolithic integration and is inexpensive to manufacture, and a phase shifter.
Additional MZIs and phase shifters (metal heaters) in the additional MZI1 reference arm are deployed to obtain fully balanced interference at the output before the sensing measurement to maximize the extinction ratio and detection limit. As a method, in accordance with a preferred embodiment of the present invention, the above is combined with a large free spectral range MZI (tens to hundreds of nanometers free spectral range) structure to achieve ultra-high sensitivity and sensing performance to meet current and future needs.
In addition, certain features are provided according to additional embodiments of the present invention that have overall low manufacturing costs and reduced etching and stripping steps, including single etch photonic waveguides (strips) and single stripping step plasmonic waveguides. In addition, an integrated MZI plasma photonic sensor design method is provided, which can improve the sensitivity level and reduce the cost of manufacturing compared to the prior art.
According to a particular embodiment of the device according to the invention, the plasmonic waveguide is made of a noble metal, such as gold (Au) or silver (Ag); it is also possible to use low cost metals such as copper (Cu), aluminum (Al), titanium nitride (TiN), or other CMOS compatible metals.
According to another embodiment of the device according to the invention, the plasmonic waveguide is made of either of the following two waveguides
"thin-film waveguides" (TFWs) consisting of thin metal strips deposited directly on an oxide coating by means of cavities formed by etching the top oxide coating and only one section of the photonic-waveguide silicon nitride core, or
"hybrid plasma photonic slot waveguide" (HPPSW) comprising two parallel metal lines deposited directly on top of a predetermined section of the waveguide without cavities or other processing steps, wherein the photonic waveguide under the metal strips is interrupted during lithography without additional masking or processing steps, wherein plasma slots and phase shifters are deposited directly on top of the photonic waveguide in a single step and a single metal layer deposition step without etching the plasma waveguide, more specifically wherein the metal strip spacing value (distance W) is defined during sensor mask design in order to design the HPPSW and thermo-optical phase shifters (heaters) in a single mask Slot ) And metal strip length and width, and more particularly, directional couplers included therein for coupling light from the photonic waveguide to the plasmonic slot and back to the photonic waveguide plasmonic cone at the front and back end of the plasmonic slot, also for improving coupling efficiency.
The invention also relates to an apparatus comprising an array of devices as described above, wherein the array of devices allows for the simultaneous detection of multiple substances on the same chip, wherein the apparatus comprises a plurality of upper branches with plasmonic waveguides and a same number of lower branches as the upper branches and provided with heaters and VOAs, wherein a common optical splitter and a common optical combiner are arranged at the chip input and output, respectively, for all MZIs, wherein each MZI sensor uses the same number of individual wavelengths, which are injected into the biosensor through the optical splitter at the same time by optical means, wherein each MZI further comprises an optical filter arranged after its splitting input and input splitter to select its operating wavelength from the input optical signal, in particular wherein the optical filter or other optical filters with similar functionality, such as AWGs, consists of a ring resonator.
According to more specific embodiments of the device according to the present invention, the device is made of other CMOS compatible photonic materials, such as Si and silicon-on-insulator (SOI), tiO, respectively 2 (ii) a Other CMOS compatible metal materials such as Al, cu, tiN or compounds of these materials.
According to another embodiment of the device according to the invention, the device comprises a bidirectional vertical grating coupler for replacing other optical input/output and optical splitters and optical combiners of the first sensor (MZI 1) to simultaneously function as the vertical input/output and optical splitters and optical combiners of the first sensor (MZI 1).
According to a particular embodiment of the device/8 according to the invention, an integrated light source, in particular a VCSEL, LED, broadband light source or other light source and a photodetector are arranged at the device input and output ends, respectively, more particularly wherein the light source and photodetector are integrated above the grating coupler or on the same level of the photonic waveguide using flip-chip or wafer bonding or die bonding or epitaxial growth methods.
According to a further embodiment of the device according to the invention, an array of integrated light sources and photodetectors is arranged at the input and output ends of the device, in particular wherein the light sources and photodetectors are integrated above the grating coupler or on the same level of the photonic waveguide using flip-chip or wafer bonding or die bonding or epitaxial growth methods.
According to a remarkable embodiment of the device according to the present invention, the device comprises vertical electrical vias, also called TSVs, 3D connected to and electrically controlling the electro-optical phase shifters by electronic circuits integrated on the same chip.
According to another significant embodiment of the device according to the present invention, the device comprises an additional fluid channel fixed to the surface of the plasma waveguide for allowing a predetermined solution/analyte to flow over the plasma transducer element.
According to a very significant embodiment of the device according to the invention, an additional capture layer is provided at the plasmon sensor surface for detecting specific biological and/or chemical substances and/or molecules.
More particularly, the invention also relates to a method of monolithic co-integration of CMOS photonic and plasma components with an optimally biased MZI interferometer that improves sensor sensitivity to an unprecedented level and is inexpensive to manufacture.
The invention also relates to a method for using the device, in particular, an additional unfunctionalized plasma waveguide with the same size is arranged on the lower branch of the sensor, or a similar device is arranged on the MZI array. In particular, wherein the target analyte is directed to flow over the additional waveguide, similar to the functionalized waveguide on the top branch of the sensor, and wherein unwanted adhesion or noise is eliminated.
The main embodiment of the method for using the device according to the invention is characterized in that it further comprises the following steps:
-optimally biasing the interferometer MZI as a variable optical attenuator by means of the thermo-optical heater comprised in the Mach-Zehnder type interferometer,
-providing an optical splitter and an optical combiner by means of a Variable Optical Attenuator (VOA) provided with a second interferometer nested into said first sensor, for optical splitting at said additional second interferometer first coupling point and for optical combining at said second interferometer second coupling point, respectively;
-adjusting the optical signal phase in each of the interferometer (MZI 1, MZI 2) - (VOA) reference arms by the thermo-optical phase shifter; depositing two metal strips parallel to each other on top of the photonic waveguide segment and along the light propagation direction, thereby forming a thermo-optic phase shifter;
-providing a thermo-optic phase shifter in its reference arm, acting as a Variable Optical Attenuator (VOA), by means of said additional optical interferometer nested in said first optical interferometry sensor, said thermo-optic phase shifter being controlled by a drive signal of the thermo-optic phase shifter,
-wherein a Variable Optical Attenuator (VOA) controls the signal strength in the first interferometric sensor reference arm, and said additional thermo-optical shifter in the first interferometric sensor reference arm allows to control the beam phase in said reference arm, and thus the field amplitude and phase in said first interferometric sensor reference arm, so that said interferometric sensor can be balanced and biased by electrical signals at the desired operating point.
According to another embodiment of the method according to the invention, the lower branch of the first sensor is provided with an additional non-functionalized plasmonic waveguide of the same size, or with similar means in the MZI array. In particular, wherein the target analyte is directed to flow over the additional waveguide, similar to the functionalized waveguide on the top branch of the sensor, and unwanted binding or noise is eliminated.
Briefly, the present invention provides a method and apparatus for low-cost, large-scale fabrication of ultra-high sensitivity integrated plasmonic photonic biosensors.
The respective dependent claims define further features of the invention.
Some exemplary embodiments of the invention are described in more detail in connection with the accompanying drawings. It is to be noted that the embodiments of the present invention and the features of the embodiments can be combined with each other within the scope of the present application.
Drawings
FIG. 1 shows a schematic diagram of a biosensor circuit based on a plasmonic photonic MZI.
Fig. 2, 3 and 4 show perspective, cross-sectional and side views, respectively, of a hybrid plasmonic slot waveguide (HPPSW) for a sensor plasmonic portion and a thermo-optic phase shifter (heater).
FIGS. 5 and 6 show perspective and schematic side views, respectively, of a thin film interface between a photon and Thin Film Plasmon Waveguide (TFPW) for the sensor plasma portion.
Fig. 7 shows the spectral shift of the MZI formant of the sensor with a free spectral range of wavelength 1164nm, while fig. 8 and 9 represent the first and second factors of equation 1, respectively, and are used to measure the optical sensitivity of the biosensor.
FIG. 10 shows a schematic of a multi-channel biosensor architecture that parallelizes multiple optical signals (wavelengths) using multiplexed MZI sensors, optical filters, and WDM. A single MZI sensor uses each optical wavelength.
Detailed Description
First, circuit embodiments are described in more detail below. The device according to the invention comprises an optical interference biosensor, in particular of the Mach-Zehnder type MZI, which utilizes nanoscale Si 3 N 4 A photonic waveguide and a nanoscale plasmonic waveguide planar integrated on a CMOS chip. The method of the present invention includes detecting chemical and/or physical quantities through known changes in refractive index that occur in a plasma waveguide segment when a test analyte or gas is attached to an interferometer. The additional MZI, for example the second mach-zehnder optical interferometer MZI2, is used as a variable optical attenuator VOA together with an optical phase shifter, a separate phase shifter being included in one branch, in particular in the lower branch of the interferometer, in order to optimally balance the sensor and achieve measurement sensitivity. The sensor design is combined with low cost materials and manufacturing processes to enable large scale manufacturing.
FIG. 1 shows an integrated sensor circuit that includes the use of SiO disposed on a low index oxide substrate 2 And a low index oxide capping layer LTO, as shown in 301, 302, 303, 304 in fig. 3 and 601, 602, 603, 606 in fig. 6. The circuit also includes an optical coupling structure disposed at both ends 101,110 of the sensor for optical input/output. It also comprises an optical splitter and an optical combiner for optical splitting at the first connection point 102 of the first MZI (sensor) and for optical splitting at the second connection point 1 of the first MZI (sensor) 112The light is combined at 09. It may be a star connection or a multimode interference coupler MMI.
The circuit further comprises a variable optical attenuator VOA 111, actually using an additional second MZI, nested in the first MZI, for deploying an optical splitter 105 and an optical combiner 108 for optical splitting at a first coupling point of the second MZI and optical combining at a second coupling point of said second MZI.
It also includes thermo-optical phase shifters 104,106 for tuning the optical signal phase I in each MZ reference arm, i.e. the first sensor 112 and the second VOA 111. A thermo-optic phase shifter is formed by depositing two metal strips parallel to each other on top of a length of photonic waveguide and along the direction of propagation of the light.
Further included is a plasmonic waveguide disposed in the upper leg 103 of the first MZI for limiting light propagation by coupling surface plasmons, SPP, at the metal-analyte interface. The plasmon waveguide is made of a noble metal such as gold (Au) or silver (Ag); low cost metals such as copper (Cu), aluminum (Al), titanium nitride (TiN), or other CMOS compatible metals. The plasmon waveguide can be fabricated with any of the following two waveguides: first, a thin film waveguide TFW, which consists of a thin metal strip deposited directly on the oxide cladding by means of a cavity formed by etching the top oxide cladding and only one section of the photonic waveguide silicon nitride core, as shown in fig. 5, or a waveguide, which consists of what is known as a hybrid plasma photonic slot waveguide HPPSW, comprising two parallel metal lines, wherein the metal lines are deposited directly on top of a predetermined section of the waveguide without the need for cavities or other processing steps, as shown in fig. 2. In this case, the photonic waveguide underneath the metal strip is interrupted, without additional masking or processing steps. The plasma slot and phase shifter can be deposited directly on top of the photonic waveguide in a single step to form an even lower cost sensor, with no subsequent etching of the photonic waveguide, but only a single metal layer deposition step, as shown in fig. 4. To design HPPSW and thermo-optical phase shifters (heaters) in a single mask, the distance W is determined during sensor mask design Slot Metal ofStrip spacing values and metal strip lengths and widths. Light from the photonic waveguide is coupled to the plasma tank and returned to the photonic waveguide using a directional coupler. The plasma cones at the front and back ends of the plasma tank shown in fig. 2 may also be used to improve coupling efficiency.
TABLE 1
Table 1 shows how the sensitivity improves with increasing free spectral range of TFPW and HPPSW measured in the optimum bias MZI when material dispersion is omitted.
Photon and plasma waveguide assemblies are described below. Photonic waveguide arranged in the invention is based on stoichiometric Si 3 N 4 A technique with cross-sectional dimensions of 360 x 800nm and supporting two guiding photon modes of interest at 1550nm optical wavelengths of polarization TM and polarization TE. However, other dimensions of the photonic waveguide may be used if supporting the transition of the optical mode to the plasmonic waveguide.
Based on this waveguide structure and the two types of plasmonic waveguides, a photon-plasmon interface is deployed in both aspects of the invention. The first type relates to photon-to-plasma conversion mode based on butt-coupled scenarios of thin film plasmonic waveguides (TFW), which require TM polarized light, as shown in fig. 5 and 6, and the second type relates to the transition based on hybrid plasmonic waveguide (HPPSW) directional coupling schemes, which require TE polarized light, as shown in fig. 2, 3 and 4. In both cases, the photonic structure is Si 3 N 4 Rectangular waveguides, the dimensions of which are carefully selected, can therefore provide the necessary coupling mechanism while meeting manufacturing constraints.
For a hybrid slot waveguide, a directional coupling mechanism is utilized while following the mixing characteristics of the waveguide used. The hybrid waveguide can support modes, particularly field distributions in its plasma and photonic parts, and if properly designed, can exhibit quasi-even or odd symmetry. Then canTo treat the power exchange as a result of jitter between the two modes. FIG. 3 shows a cross-section of the waveguide arrangement, which comprises Si 3 N 4 Bus waveguide-photonic and metal slot-plasmonic-on Si 3 N 4 Above the waveguide. Between the two waveguides, the photon and plasma waveguides, there is a layer of Low Temperature Oxide (LTO) which serves as the cladding for the photon waveguide, and the underlayer for the hybrid slot waveguide.
Hybrid waveguides can support field distribution modes in their plasmonic and photonic parts. Two-dimensional eigenvalue analysis gives all possible combinations of geometric parameters, so that mixed modes with even-pair and odd-symmetry can be supported. After thorough investigation, a suitable geometric setting, e.g. W, is selected slot ＝200nm，Si 3 N 4 Width: w SiN =700nm and LTO thickness: h is a total of LTO = 660nm in total, the mode of interest therefore not only exhibits the necessary symmetry but also leads to a small coupling length. In this case, the approximate coupling length required to efficiently transfer power from the plasma to the photonic portion is estimated to be about 7 μm. The dimensions may vary depending on the simulation tool and parameters.
The 3D FDTD electromagnetic simulation is used to verify the results and is intended for fine tuning backwards. In this 3D geometric model, the hybrid waveguide of interest is excited by the TE photon mode, and Si 3 N 4 The bus waveguide is interrupted after a length of 7 μm (Lc). As shown in plane a of fig. 4, the interruption has proven beneficial in terms of coupling efficiency, as it prevents any minor power leakage to the photonic component. According to FDTD simulations, this hybrid architecture can efficiently transport light from photons to the plasma section and back, each time with an efficiency of 68%/conversion when using gold as the metal. The photonic cone is deployed to match the photonic mode of the photonic waveguide to the mode of the plasmonic waveguide.
CMOS metal is used to mix the slot waveguide components to follow the same design procedure. Since the only part modified for this purpose is the metal bath, the previously proposed two-step analysis is repeated: analysis by 2D eigenmode analysis is similar toThe hybrid structure shown in fig. 2. Two even and odd symmetric modes are detected and the necessary coupling length is calculated. The entire waveguide structure was then simulated by a 3D FDTD model to estimate the coupling efficiency from the photon to the plasma and plasma to the photon section. As expected by polarizing Si with TE of interest 3 N 4 25 mode excited photonic part of the hybrid structure, and interrupting Si after Lc =6 μm length 3 N 4 The bus waveguide, when using Al, can efficiently transmit light from the photonic section to the plasma section with a power efficiency of at least 60%, and when using Cu, can efficiently transmit light from the photonic section to the plasma section with a power efficiency of 74%.
In one aspect of the invention, the HPPSW is used as a sensing plasma waveguide, and the plasma waveguide and heater in the sensor chip can be simultaneously deposited on the same level of the chip material stack as the final stage of the single metal layer fabrication process, thereby simplifying the production process and reducing the sensor production cost. It should be noted that the oxide separation layer is the same for the HPPSW and heater structures.
In the photon-to-plasma interface structures for thin film waveguides shown in fig. 5 and 6, the coupling mechanism between the photon waveguide and the plasma waveguide is based on spatial matching of the two modes of interest. For this purpose, use is made of a material comprising photons Si 3 N 4 And the butt coupling scheme of the waveguide and the plasma Au-based thin film structure. The two waveguide structures are placed such that the input level of one of the waveguide structures coincides with the output level of the other waveguide structure. The design process is intended to detect the precise geometric parameters of each waveguide so that light can be efficiently transferred from the photonic portion to the plasma portion and vice versa. In this direction, first, two waveguides were each analyzed in terms of 2D eigenvalue analysis. After selecting the two eigenmodes of interest by requiring the polarization and field distribution of the TM polarization to match each other, a first indicative estimate of the power coupling capability of such a structure has been obtained using parametric analysis based on power overlap integral calculations. In a second step, alreadyThe estimate was verified by 3D FDTD simulation.
The thin film plasma waveguide tube comprises a thin film layer disposed on SiO 2 A thin metal film over the layer and water as a top cladding material to best simulate the biosensing application environment. The investigation was performed starting from 2D eigenvalue analysis of the plasma component. The structure can support a plasma mode which is mainly concentrated on a metal-cladding interface, and the modal characteristics of the structure are mainly determined by the metal stripes and the geometrical shape of a cladding material. Fig. 5 and 6 depict the geometry of the waveguide in perspective and side views.
For the photon-to-plasma interface, si has been separately analyzed 3 N 4 Photonic waveguides are used to study the characteristics, particularly polarization, field distribution, of the photon TM modes of interest. Then, eigenvalue analysis-Si 3 N 4 And thin film waveguides-are all contemplated, and the geometric arrangement of the two components is carefully chosen to satisfy modal matching in terms of space and polarization. In a further step, two waveguide structures have been combined in a butt-coupling arrangement, one of which is shown in fig. 5 and 6. A 3D model of a single transition from the photonic component to the plasma component was analyzed by 3D FDTD simulation. By appropriately sizing the two waveguides, it is shown that the power transfer from the photonic mode to the plasmonic mode and vice versa can be maximized. More specifically, after thorough investigation of the power overlap integral calculation, for Si 3 N 4 And a metal film, the cross-sectional dimensions of the two waveguides of interest having been set to 360nm x 7.5 μm and 100nm x 7 μm, respectively. Then, the exact positions of them in the interface setup were investigated to maximize the coupling efficiency, where h is shown in fig. 6 Offset of As a vertical offset, L Offset of As a lateral offset. Numerical simulations indicate that when gold is used as the thin film metal, the vertical offset can be up to 400nm and the maximum coupling efficiency can be up to about 64%.
CMOS metal may be used instead of gold for mass production of biosensor chips. The results showed that the light transmittance (coupling efficiency) from the photon section to the plasma section was 60% and 68%, respectively, when Al and Cu were used, respectively. TiN or other CMOS compatible metal compounds may also be used.
Similar to hybrid waveguides, to accomplish this photon-to-plasma interface, the use of prior art photonic cones to incorporate Si is also designed and used 3 N 4 The width was adjusted from 800nm to 7.5 μm.
Other examples of oxide materials for the top cladding of photonic waveguides are LTO, siO 2 SU8 or other oxides having similar optical properties for all aspects of the invention.
The complete sensor with all the above components can be monolithically integrated on a single chip and through the use of large CMOS wafers and electronic IC factories to reduce the cost per sensor chip while providing subversive sensitivity performance. Alternatively, in an aspect of the invention in which the plasmonic waveguide employs gold or silver, an additional metal deposition process is required outside the CMOS factory or in a specially manufactured part of the CMOS factory where a gold or silver deposition process can be provided.
With respect to the sensor design method, in the present invention, the effective refractive index of the plasmonic waveguide depends on the concentration of the target substrate in the test liquid or gas combined with the plasmonic waveguide tested with known surface functionalization methods. The changes in the effective refractive index of the plasmonic waveguide cause the MZI sensor spectral resonance to shift. And comparing the resonance offset phase with the liquid refractive index change to determine the sensitivity of the biosensor. By using the following formula 1 Calculating the volume sensitivity of a sensor
Where λ is the optical signal wavelength, n liq Is the refractive index of the applied liquid, and n eff The mode effective refractive index in the plasmon waveguide is described, and detailed information is shown in Xu Sun et al, "high-sensitivity liquid refractive index sensor based on Mach-Zehnder interferometer provided with double-groove hybrid plasmon waveguide". American optical society opticalVolume 3, 2015, 11 months and 25 days.
The plasmonic waveguide maximizes the value of the second term because the majority of the electric field of the optical mode propagates in the water-metal interface of the plasmonic waveguide, whereas in the photon sensing waveguide the spatial overlap between the evanescent field of the optical mode and the analyte under test is much smaller.
The value of the first term of equation 1 is maximized by optimally biasing the interferometer using the embodiment described herein having all of the components described above. Specifically, once the optical path between the MZ branches is designed for a particular free spectral range, bias optimization of the disclosed sensor is achieved using heater 1 and heater 2 106 in MZI2 111 shown in fig. 1.
To optimize the optical path of the lower branch, a heater 1 as shown in fig. 1 is included so that the relative phase change between the light of the upper branch and the lower branch is a specific operating wavelength 2 TT A multiple of radian. Meanwhile, during the manufacturing process, the optical path difference is readjusted using the heater 1 after introducing a manufacturing error. If the heater 1 is switched on, the readjustment is made by applying electrical power, i.e. a direct voltage, to both metal strips. An optical power meter is required to monitor the optical path difference between the upper and lower branches of the MZI, as is well known to those skilled in the art.
In order to optimize the optical power of the lower branch, the heater 1 shown in fig. 1 is included in the MZI2, so that the optical loss of the lower branch is equal to that of the upper branch. MZI2 operates as a variable optical attenuator VOA that is used to balance the optical power at the two branches of the MZI. The balancing is achieved by applying electrical power (DC voltage) to the two metal strips of the heater 2. As known to those skilled in the art, equal loss of the two branches will maximize the interferometer extinction ratio, effectively increasing the sensitivity (resolution) of the sensing measurement.
Once the primary DC voltages needed to balance the interferometers in heaters 1 and 2 are determined, an iterative method is applied to fine tune these voltages between the 2 DC voltages to fully optimize the bias of the interferometers. Once this is achieved, a 701 wavelength resonance is obtained at the MZI1 output 110. The analyte under test is then attached to the plasma waveguide 107 by prior art methods, such as fluid cell, or manual means, and the interferometer resonance is measured at the output of the sensor and the shift in resonance in the spectrum is measured, as shown in FIG. 7. The resonance shifts 702-705 depend on the refractive index change of the analyte under test. For such measurements, the first and second terms of equation 1 are plotted in fig. 8 and 9 to derive the overall sensitivity value of the sensor device.
Using this method, the sensitivity was 11,792nm/RIU using TFW and 162,000nm/RIU using HPPSW for the digital modeling tool, calculated by equation 1 for the 1164nm FSR sensor circuit. By designing the optical path difference accordingly and following the same optimization method of the disclosed sensor, a smaller or even larger FSR, i.e. a lower or higher sensitivity, can be achieved.
In addition, a sensor measurement method is also provided. The refractive index change of the disclosed device can be measured using three different interrogation methods:
the first method includes using a tunable laser and a power meter to spectrally shift the first MZI resonance: the sensor input requires a tunable laser source as the light source and the sensor output requires a power meter. As known to those skilled in the art, changes in the spectral response of the sensor before and after application of the analyte on the plasmon waveguide will show a spectral shift in resonance;
another method includes measuring a spectral shift of a first MZI resonance using a broadband light source and a spectrum analyzer: the sensor input requires a broadband light source, such as a white light source, an LED or LED array or any other type of broadband light source as a light source, and the sensor output requires a spectrum analyzer. As known to those skilled in the art, changes in the spectral response of the sensor before and after application of the analyte on the plasmon waveguide will show a spectral shift in resonance;
yet another method includes using a single wavelength source to make phase shift measurements of a plasma waveguide: for the same free spectral range as described above, the refractive index change can be directly correlated to the phase shift by injecting a single wavelength of light at the sensor input and measuring the optical power at the first MZI output with a power meter. The sine wave power fluctuation versus time provides an arc phase shift, as known to those skilled in the art.
Another aspect of the invention includes multiplexing MZI structures and wavelength selective optical filters to detect multiple substances simultaneously using the same chip, also known as multi-channel sensing. As shown in fig. 10, the problem of simultaneously detecting three substances is solved in conjunction with the above-described embodiment.
The three nested MZI sensors shown in fig. 10 using the above-described embodiments include three upper branches having a plasma waveguide 1007 and three lower branches having heaters 1005 and VOAs 1008 as described in the previous embodiments. All three MZIs use common optical splitters and common optical combiners at the chip input and output. Each MZI sensor uses a separate one of three wavelengths which are injected simultaneously into the biosensor through the optical splitter 1003. Each MZI also includes an optical filter 1006 at its branch input and after the input splitter to select its operating wavelength from the input optical signal. The optical filter may be a ring resonator or other optical filter with similar function as is common in the prior art.
Another aspect of this embodiment is to deploy WDM multiplexers instead of the input common coupler and optical filters, such as arrayed waveguide grating AWGs, bragg grating based multiplexers, or other WDM multiplexers with similar functionality.
Depending on the user requirements and the amount of chip real estate, more sensing channels can be integrated on a single chip.
Claims (14)
1. An integrated plasmonic biosensor comprising at least one optical interferometric sensor, the optical interferometric sensor being a first mach-zehnder interferometric sensor having a free spectral range of tens to hundreds of nanometers; wherein the plasma waveguide (107) comprises a thin film or hybrid slot waveguideTube for planar integration in Si 3 N 4 A transducer element on the photonic waveguide;
a set of photonic waveguides with high index of refraction silicon nitride strips (303, 603) sandwiched between a low index of refraction oxide substrate and a low index of refraction oxide superstrate, the oxide substrate comprising SiO 2 A substrate, the oxide superstrate comprising a low temperature oxide superstrate;
an optical coupling structure disposed at both ends of the sensor for optical input/output;
the optical coupling structure comprises an optical splitter and an optical combiner, wherein the optical splitter is used for carrying out optical separation at a first connection point (102) of the first Mach-Zehnder interferometric sensor, the optical combiner is used for carrying out optical combination at a second connection point (109) of the first Mach-Zehnder interferometric sensor, and the optical coupling structure is a star connection/directional coupler or a multi-mode interferometric coupler;
wherein a plasmon waveguide (107) is disposed on an upper leg (103) of the first Mach-Zehnder interferometric sensor for limiting light propagation by coupling with surface plasmons at a metallic analyte interface,
characterized in that the integrated plasmonic photonic biosensor comprises an additional optical interferometric element, a second mach-zehnder interferometric sensor arranged in a reference arm of the first mach-zehnder interferometric sensor, the first and second mach-zehnder interferometric sensors each comprising a first thermo-optic phase shifter (104) and a second thermo-optic phase shifter (106) acting as variable optical attenuators for optimally biasing the first and second mach-zehnder interferometric sensors; further including the entire chip;
the second Mach-Zehnder interferometric sensor has a function of a variable optical attenuator, and the first thermo-optic phase shifter (104) and the second thermo-optic phase shifter (106) included therein are respectively used for an optical splitter and an optical combiner which perform optical separation at a first coupling point of the second Mach-Zehnder interferometric sensor and optical combination at a second coupling point of the second Mach-Zehnder interferometric sensor,
a set of said first and second thermo-optic phase shifters (104, 106) for tuning the phase of the optical signal in the reference arms of the first and second mach-zehnder interferometric sensors; wherein the thermo-optic phase shifter is formed by depositing two metal strips parallel to each other on top of a length of a photonic waveguide and along the propagation direction of light.
2. The integrated plasmonic biosensor of claim 1, wherein the plasmonic waveguide is made of a noble metal, the noble metal being gold or silver;
alternatively, the plasmonic waveguide is made of a non-noble metal, which is copper, aluminum or a CMOS compatible metal compound.
3. The integrated plasmonic biosensor of claim 2, wherein the plasmonic waveguide is made of a thin film waveguide comprising a thin metal strip deposited directly on an oxide superstrate via a cavity formed by etching a top oxide cladding and only a segment of a photonic waveguide silicon nitride core;
alternatively, the plasmonic waveguide is made of a hybrid plasmonic photonic slot waveguide comprising two parallel metal strips, which are directly deposited on top of a predetermined section of the waveguide without cavity or additional processing steps; wherein, during photolithography, the photonic waveguide beneath the metal strip is interrupted without the need for additional masking or processing steps; wherein the plasma trough and the first thermo-optic phase shifter (104) are directly deposited on top of the photonic waveguide in a single step using a single metal layer deposition step without etching the plasma waveguide; wherein, in order to design the hybrid plasmonic photonic slot waveguide and the first thermo-optic phase shifter (104) separately in a single mask, during sensor mask design, metal strip spacing values and metal strip lengths and widths are determined; the directional coupler is used for coupling light from the photonic waveguide to the plasma groove and returning the light to the photonic waveguide, and the photonic waveguide plasma cones at the front end and the rear end of the plasma groove are also used for improving the coupling efficiency.
4. The integrated plasmonic biosensor of claim 1, wherein the high index silicon nitride strips (303, 603) of the plasmonic waveguide are arranged in SiO as a low index oxide substrate 2 Between the substrate and a low temperature oxide superstrate that is a low refractive index oxide superstrate;
alternatively, the high index silicon nitride strips (303, 603) are arranged by dividing SiO by a silicon nitride with similar index 2 And corresponding substrates made of oxides other than low temperature oxides.
5. The integrated plasmonic biosensor of claim 4, wherein the high refractive index silicon nitride strip is made of Si, silicon-on-insulator or TiO 2 Preparing;
or the high-refractive-index silicon nitride strip is made of Al, cu and TiN or a compound of Al, cu and TiN.
6. The integrated plasmonic biosensor of claim 1, comprising a bi-directional vertical grating coupler for optical input and output of the first mach-zehnder interferometric sensor, the bi-directional vertical grating coupler comprising an optical splitter and an optical combiner.
7. An apparatus for simultaneously detecting multiple substances on the same chip comprising an integrated plasmonic photonic biosensor according to any of claims 1-6, wherein the apparatus comprises a plurality of upper arms with plasmonic waveguides and a same number of lower arms with thermo-optic phase shifters and variable optical attenuators as the upper arms, wherein optical splitters and optical combiners are arranged at the chip input and output ends, respectively, for all mach-zehnder interferometric sensors; wherein the first mach-zehnder interferometric sensor and the second mach-zehnder interferometric sensor use the same number of individual wavelengths of wavelength that are simultaneously injected into the optical splitter in the biosensor through the optical device, wherein each mach-zehnder interferometric sensor further comprises an optical filter disposed after its splitting input and input splitter to select its operating wavelength from the input optical signal, wherein the optical filter comprises a ring resonator.
8. The apparatus of claim 7, wherein an integrated light source and a photodetector are arranged at an input and an output of the apparatus, respectively, the integrated light source comprising a VCSEL, an LED, and a broadband light source; wherein the integrated light source and the photodetector are integrated above the grating coupler or on the same level of the photonic waveguide using flip chip or wafer bonding or die bonding or epitaxial growth methods.
9. The device of claim 8, wherein an array of integrated light sources and photodetectors are arranged at the input and output of the device; wherein the light source and the photodetector are integrated above the grating coupler or on the same level of the photonic waveguide using flip chip or wafer bonding or die bonding or epitaxial growth methods.
10. The device according to claim 7, characterized in that it comprises vertical electrical vias, the thermo-optic phase shifters being connected in 3D and electrically controlled by electronic circuits integrated on the same chip.
11. The apparatus of claim 7, comprising an additional fluid channel attached to the surface of the plasma waveguide for flowing a predetermined solution or analyte over the plasma transducer elements.
12. The apparatus according to claim 11, characterized in that an additional trapping layer is provided at the surface of the plasma transducer for detecting specific biological and/or chemical substances.
13. The method of arranging an integrated plasmonic photonic biosensor of any of claims 1 to 6 or the device of any of claims 7 to 12, wherein the lower branch of the first mach-zehnder interferometric sensor is arranged with an additional non-functionalized plasmonic waveguide of the same size, guiding the target analyte to flow over the additional non-functionalized plasmonic waveguide, and eliminating harmful sticking or noise.
14. Use of an integrated plasmonics photonic biosensor according to any of claims 1 to 6 or of an apparatus according to any of claims 7 to 12, characterized in that it comprises the following steps:
optimally biasing a Mach-Zehnder interferometric sensor for use as a variable optical attenuator by the thermo-optic phase shifter included in the Mach-Zehnder interferometric sensor,
wherein the second Mach-Zehnder interferometric sensor nested into the first Mach-Zehnder interferometric sensor is used as the variable optical attenuator, an optical splitter for optical splitting is disposed at a first coupling point of the second Mach-Zehnder interferometric sensor, and an optical combiner for optical combining is disposed at a second coupling point of the second Mach-Zehnder interferometric sensor, respectively,
tuning, by the thermo-optic phase shifter, optical signal phases in reference arms of the first and second mach-zehnder interferometric sensors; depositing two metal strips parallel to each other on top of the photonic waveguide and along the light propagation direction, thereby forming a thermo-optic phase shifter;
the second Mach-Zehnder interference measurement sensor is nested in the first Mach-Zehnder interference measurement sensor, a thermo-optic phase shifter is arranged in a reference arm of the second Mach-Zehnder interference measurement sensor, the second Mach-Zehnder interference measurement sensor is used as a variable optical attenuator, and the thermo-optic phase shifter is controlled through a driving signal of the thermo-optic phase shifter;
wherein the variable optical attenuator controls the signal strength in the first Mach-Zehnder interferometric sensor reference arm; and the thermo-optic phase shifter in the first mach-zehnder interferometric sensor reference arm allows for control of the beam phase in the reference arm, and thus the field amplitude in the first mach-zehnder interferometric sensor reference arm, so that the first mach-zehnder interferometric sensor can be balanced and biased by electrical signals at a desired operating point.
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| GR2017/0100088 | 2017-02-17 | ||
| GR20170100088A GR1009480B (en) | 2017-02-17 | 2017-02-17 | Method for manufacturing an integrated plasmo-photonic biosensor and device therefor |
| PCT/GR2018/000007 WO2018150205A1 (en) | 2017-02-17 | 2018-02-20 | Integrated plasmo-photonic biosensor and method of use |
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| WO2020180630A1 (en) * | 2019-03-01 | 2020-09-10 | California Institute Of Technology | Waveguide integrated plasmon assisted field emission detector |
| US11808569B2 (en) * | 2020-03-22 | 2023-11-07 | Strike Photonics, Inc. | Waveguide enhanced analyte detection apparatus |
| WO2021207834A1 (en) | 2020-04-13 | 2021-10-21 | The University Of British Columbia | Photonic sensor using a fixed-wavelength laser |
| CN113917603B (en) * | 2021-03-26 | 2023-06-16 | 广东工业大学 | Integrated optical device based on sub-wavelength metal/medium |
| CN113253403B (en) * | 2021-06-17 | 2021-10-29 | 苏州浪潮智能科技有限公司 | Optical device, electronic device and programmable photonic integrated circuit |
| CN113532493B (en) * | 2021-07-26 | 2023-03-24 | 吉林大学 | Organic-inorganic hybrid integrated polymer temperature sensor and preparation method thereof |
| EP4148469A1 (en) * | 2021-09-14 | 2023-03-15 | Cambridge Enterprise, Ltd. | Photonic crystal-based sensor |
| CN114089474B (en) * | 2021-11-30 | 2024-04-19 | 吉林大学 | Organic-inorganic hybrid integrated variable optical attenuator and preparation method thereof |
| JPWO2023119475A1 (en) * | 2021-12-22 | 2023-06-29 | ||
| WO2023139408A1 (en) * | 2022-01-21 | 2023-07-27 | Bialoom Ltd | Optical interferometric sensor |
| CN115290605B (en) * | 2022-04-29 | 2024-01-02 | 科竟达生物科技有限公司 | Incandescent surface plasmon resonance biochip, method for manufacturing the same, biosensing system comprising the same and use thereof |
| ES2975382A1 (en) * | 2022-11-16 | 2024-07-04 | Univ Malaga | INTEGRATED PHOTONIC BIOSENSOR WITH LAYER DISCRIMINATION CAPABILITY AND COHERENT READING SYSTEM, DEVICE, ASSEMBLY AND METHODS ASSOCIATED THEREOF (Machine-translation by Google Translate, not legally binding) |
| CN117470806B (en) * | 2023-12-21 | 2024-03-26 | 天津工业大学 | Polymer glucose sensor based on Mach-Zehnder structure |
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| JP2020508471A (en) | 2020-03-19 |
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