CN110323288A - 一种基于亚波长光栅的量子阱红外光探测器及其制备方法 - Google Patents

一种基于亚波长光栅的量子阱红外光探测器及其制备方法 Download PDF

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CN110323288A
CN110323288A CN201910602641.7A CN201910602641A CN110323288A CN 110323288 A CN110323288 A CN 110323288A CN 201910602641 A CN201910602641 A CN 201910602641A CN 110323288 A CN110323288 A CN 110323288A
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王宝勇
范鑫烨
方照詒
张鲁健
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Abstract

本发明提供了一种基于亚波长光栅的量子阱红外光探测器，由下向上依次包括有衬底、外延GaAs缓冲层、GaAs spacer隔离层、吸收腔、InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；所述外延GaAs缓冲层上设有n型接触电极和p型接触电极；所述的衬底为硅衬底；所述的吸收腔由下向上依次为InGaAs、InAs量子点、InGaAs、InAs量子点；所述的GaAs窗口层刻蚀形成亚波长光栅层。本发明还提供了上述基于亚波长光栅的量子阱红外光探测器的制备方法。本发明具有低暗电流，多光谱响应，高分辨率，高工作温度，红外成像，量子效率高，抗辐射，成本低等优点；可广泛用于红外光探测技术领域。

Description

一种基于亚波长光栅的量子阱红外光探测器及其制备方法
技术领域
本发明属于红外光探测技术领域，具体涉及一种基于亚波长光栅的量子阱红外光探测器及其制备方法。
背景技术
量子阱红外探测器是在半导体物理和分子束外延的基础上实现的，在军事和民用领域有着广泛深入的应用，诸如红外夜视、侦察、制导、红外对抗等，是发展我国国防装备、空间探索及互联网等技术能力的重要基石，事关国家安全、国计民生和经济增长等重大战略方向。目前国际上对国防需求的材料与器件执行严格的禁运，极大限制了我国在该领域的研发及装备进步。传统的红外光电探测器采用的是碲镉汞(MCT)材料，但是存在Te-Hg成键作用弱，材料位错密度和不均匀性大，可重复性差，良品率低，不适合做大面阵和产业化。而GaAs基量子阱红外探测器材料化学稳定性高，可耐受空天装备的高能离子辐射，相应波长3.5至5微米连续可调，适合制备大面阵和多色器件。
系统对量子阱红外探测器的响应度要求越来越高，并且希望在中红外波段(3.5um-5um)低损耗窗口的宽光谱范围内，都能实现较高的量子效率。对于传统的量子阱红外探测器，一般情况下通过增加器件的吸收层可以增大器件的量子效率，但载流子的传输时间变长，故响应速率会降低。具有光束会聚功能的非周期的HCG反射镜可以拓展和提升光通信器件光学特性，可以作为顶部反射镜与光探测器集成，并对入射光进行会聚，由于谐振腔的增强效应，使得器件在较薄吸收层下获得较高的量子效率，并且减少了光生载流子在吸收层的渡越时间，因此同时获得高的量子效率和较高的响应速度。
发明内容
本发明所提供的基于亚波长光栅的量子阱红外光探测器，能够进一步减小暗电流，提高量子效率，具有低暗电流，多光谱响应，高分辨率的优点。
同时，本发明还提供了上述基于亚波长光栅的量子阱红外光探测器的制备方法。
一种基于亚波长光栅的量子阱红外光探测器，其特征在于，由下向上依次包括有衬底、外延GaAs缓冲层、GaAs spacer隔离层、吸收腔、InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；所述外延GaAs缓冲层上设有n型接触电极和p型接触电极；
所述的衬底为硅衬底；所述的吸收腔由下向上依次为InGaAs、InAs量子点、InGaAs、InAs量子点；所述的GaAs窗口层刻蚀形成亚波长光栅层。
优选地，所述的吸收腔中InGaAs的厚度均为2nm，InAs量子点的掺杂浓度为Si(2e/dot)。
优选地，所述的亚波长光栅层的光栅图案为周期性或非周期性图案。
优选地，所述的光栅图案为周期高折射率差亚波长光栅、二维块状亚波长光栅以及非周期条形光栅，实现宽光谱的高反射率(3.5-5μm)。
优选地，所述的亚波长光栅层的光栅周期为100nm～2um，反射镜的数值孔径为0.7～1.2，反射率大于70％，电场强度分布半高宽为1～2μm。
优选地，所述的外延GaAs缓冲层厚度为500nm；所述的GaAs spacer隔离层厚度为80nm；所述的InGaAs缓冲层厚度为6nm、所述的GaAs窗口层厚度为650nm。
本发明还提供了上述基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，包括如下步骤：
S1.在硅基衬底上异质外延GaAs缓冲层；
S2.在外延GaAs缓冲层制作p型接触电极和n型接触电极；
S3.在外延GaAs缓冲层上生长GaAs spacer隔离层，在GaAs spacer隔离层之上制备吸收腔；
S4.在吸收腔之上，制备InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；并在GaAs窗口层刻蚀形成亚波长光栅层，在光栅沟槽内旋涂乙烯树脂；量子阱红外光探测器的入光面位于光探测器窗口层，由此制备量子阱红外光探测器。
优选地，所述的外延GaAs缓冲层生长阶段分为低温与高温两阶段；利用MOCVD生长，低温生长温度为600～620℃，高温生长温度为700～750℃。
优选地，所述的亚波长光栅层由光刻机、ICP刻蚀、电子束蒸发或溅射方法刻蚀在GaAs窗口层。
优选地，所述的亚波长光栅层中用旋涂机旋涂厚度为200nm的乙烯树脂，用丙酮洗除亚波长光栅表面的乙烯树脂，使乙烯树脂仅在光栅沟槽内填充。
本发明的有益效果：
本发明中，通过增加垒高、降低阱中掺杂浓度及降低工作温度，实现了本发明具有低暗电流；通过利用量子阱与量子点交叠结构加强了量子点与隧穿二极管的量子结构复合，形成了对光生载流子的有效量子放大，实现本发明的高量子效率。综上所述，本发明具有低暗电流，多光谱响应，高分辨率，高工作温度，红外成像，量子效率高，抗辐射，成本低等优点；可广泛用于红外光探测技术领域。
附图说明
图1为本发明实施例中的量子阱红外光探测器结构示意图；
具体实施方式
实施例1
参见附图，一种基于亚波长光栅的量子阱红外光探测器，其特征在于，由下向上依次包括有衬底、外延GaAs缓冲层、GaAs spacer隔离层、吸收腔、InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；所述外延GaAs缓冲层上设有n型接触电极和p型接触电极；
所述的衬底为硅衬底；所述的吸收腔由下向上依次为InGaAs、InAs量子点、InGaAs、InAs量子点；所述的吸收腔中InGaAs的厚度均为2nm，InAs量子点的掺杂浓度为Si(2e/dot)；所述的GaAs窗口层刻蚀形成亚波长光栅层；所述的亚波长光栅层的光栅图案为周期性或非周期性图案；所述的光栅图案为周期高折射率差亚波长光栅、二维块状亚波长光栅以及非周期条形光栅，实现宽光谱的高反射率(3.5-5μm)；所述的亚波长光栅层的光栅周期为100nm～2um，反射镜的数值孔径为0.7～1.2，反射率大于70％，电场强度分布半高宽为1～2μm。
所述的外延GaAs缓冲层厚度为500nm；所述的GaAs spacer隔离层厚度为80nm；所述的InGaAs缓冲层厚度为6nm、所述的GaAs窗口层厚度为650nm。
实施例2
本发明还提供了上述上述基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，包括如下步骤：
S1.在硅基衬底上异质外延GaAs缓冲层；所述的外延GaAs缓冲层生长阶段分为低温与高温两阶段；外延GaAs缓冲层利用MOCVD生长，低温生长温度为600℃开始，进入高温生长温度700摄氏度后，随着温度的升高，表面原子的迁移能力变大扩散长度增加引起的。低温时，原子的扩散长度较短，导致表面原子聚积在一起形成颗粒状；高温生长阶段温度为700～750℃。
S2.在外延GaAs缓冲层制作p型接触电极和n型接触电极；
S3.在外延GaAs缓冲层上生长GaAs spacer隔离层，在GaAs spacer隔离层之上制备吸收腔；
S4.在吸收腔之上，制备InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；并在GaAs窗口层刻蚀形成亚波长光栅层，在光栅沟槽内旋涂乙烯树脂；所述的亚波长光栅层由光刻机、ICP刻蚀、电子束蒸发或溅射方法刻蚀在GaAs窗口层；所述的亚波长光栅层中用旋涂机旋涂厚度为200nm的乙烯树脂，用丙酮洗除亚波长光栅表面的乙烯树脂，使乙烯树脂仅在光栅沟槽内填充；
量子阱红外光探测器的入光面位于光探测器窗口层，由此制备量子阱红外光探测器。

Claims (10)

1.一种基于亚波长光栅的量子阱红外光探测器，其特征在于，由下向上依次包括有衬底、外延GaAs缓冲层、GaAs spacer隔离层、吸收腔、InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；所述外延GaAs缓冲层上设有n型接触电极和p型接触电极；
所述的衬底为硅衬底；所述的吸收腔由下向上依次为InGaAs、InAs量子点、InGaAs、InAs量子点；所述的GaAs窗口层刻蚀形成亚波长光栅层。
2.根据权利要求1所述的基于亚波长光栅的量子阱红外光探测器，其特征在于，所述的吸收腔中InGaAs的厚度均为2nm，InAs量子点的掺杂浓度为Si(2e/dot)。
3.根据权利要求1所述的基于亚波长光栅的量子阱红外光探测器，其特征在于，所述的亚波长光栅层的光栅图案为周期性或非周期性图案。
4.根据权利要求3所述的基于亚波长光栅的量子阱红外光探测器，其特征在于，所述的光栅图案为周期高折射率差亚波长光栅、二维块状亚波长光栅以及非周期条形光栅，实现宽光谱的高反射率(3.5-5μm)。
5.根据权利要求4所述的基于亚波长光栅的量子阱红外光探测器，其特征在于，所述的亚波长光栅层的光栅周期为100nm～2um，反射镜的数值孔径为0.7～1.2，反射率大于70％，电场强度分布半高宽为1～2μm。
6.根据权利要求1所述的基于亚波长光栅的量子阱红外光探测器，其特征在于，所述的外延GaAs缓冲层厚度为500nm；所述的GaAs spacer隔离层厚度为80nm；所述的InGaAs缓冲层厚度为6nm；所述的GaAs窗口层厚度为650nm。
7.一种根据权利要求1所述的基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，包括如下步骤：
S1.在硅衬底上异质外延GaAs缓冲层；
S2.在外延GaAs缓冲层制作p型接触电极和n型接触电极；
S3.在外延GaAs缓冲层上生长GaAs spacer隔离层，在GaAs spacer隔离层之上制备吸收腔；
S4.在吸收腔之上，制备InGaAs缓冲层、GaAs spacer隔离层、GaAs窗口层；并在GaAs窗口层刻蚀形成亚波长光栅层，在光栅沟槽内旋涂乙烯树脂；量子阱红外光探测器的入光面位于光探测器窗口层，由此制备量子阱红外光探测器。
8.根据权利要求7所述的基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，所述的外延GaAs缓冲层生长阶段分为低温与高温两阶段；利用MOCVD生长，低温生长温度为600～620℃，高温生长温度为700～750℃。
9.根据权利要求7所述的基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，所述的亚波长光栅层由光刻机、ICP刻蚀、电子束蒸发或溅射方法刻蚀在GaAs窗口层。
10.根据权利要求7所述的基于亚波长光栅的量子阱红外光探测器的制备方法，其特征在于，所述的亚波长光栅层中用旋涂机旋涂厚度为200nm的乙烯树脂，用丙酮洗除亚波长光栅表面的乙烯树脂，使乙烯树脂仅在光栅沟槽内填充。
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