CN110320191A - The device and method of in-situ study ion irradiation damage optical signature depth distribution - Google Patents
The device and method of in-situ study ion irradiation damage optical signature depth distribution Download PDFInfo
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- CN110320191A CN110320191A CN201910605492.XA CN201910605492A CN110320191A CN 110320191 A CN110320191 A CN 110320191A CN 201910605492 A CN201910605492 A CN 201910605492A CN 110320191 A CN110320191 A CN 110320191A
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- Prior art keywords
- sample
- ion beam
- ion
- irradiation damage
- depth distribution
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6417—Spectrofluorimetric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
Abstract
The invention discloses a kind of device and methods of in-situ study ion irradiation damage optical signature depth distribution, wherein device includes: diaphragm, electrostatic lenses, sample console, optical lens and spectrometer, ion beam successively focuses on the sample surfaces being set on sample console after diaphragm, electrostatic lenses, and sample is incident upon spectrometer through optical lens through the light that ion beam irradiation inspires.The in-situ characterization of the depth distribution of ion irradiation damage optical signature is realized in destruction the invention avoids the recovery and double measurement of irradiation damage after tradition research scheme sample irradiation to irradiation damage.
Description
Technical field
The invention belongs to ion irradiation damaging techniques field, more particularly to a kind of in-situ study ion irradiation damage
Hurt the device and method of optical signature depth distribution.
Background technique
Due to the sensitivity (detection accuracy is up to part per billion magnitude) of luminescent spectrum superelevation, in existing material
In ion irradiation damage research, a kind of effective test method is luminescent spectrum (the usual detecting band by test material
For ultraviolet, visible and near infrared band) come the optical signature that characterizes irradiation damage.Conventional thinking is first to carry out carrying out material
Ion irradiation under different condition, followed by luminescence generated by light (PL makees excitaton source using laser), cathode-luminescence (CL, using electricity
Beamlet makees excitaton source) etc. common test method carry out optical characteristic measuring.This type research method belongs to off-line analysis test
Method, internal microstructure of the material after ion irradiation can be restored, and there is sharp when using laser as excitaton source
The influence for sending out limited wavelength is unable to characterize the defect sturcture that energy level difference is higher than laser energy；And use electron beam as excitaton source
Then there is the influences of secondary excitation, can damage to original damaged structure.Therefore, this type research method obtain from
There may be certain problems for the accuracy of sub- irradiation damage optical signature.Solve the problems, such as this type off-line analysis test method
The method that ionoluminescence method (Ion Beam Induced Luminescence, IBIL) can be used, directly adopt progress from
The ion beam of son irradiation measures luminescent spectrum while ion irradiation as excitaton source, to realize that ion irradiation damages light
Learn the in-situ study of feature.
It is that current ionoluminescence analysis obtains the result is that the luminescent spectrum of all defect within the scope of ion incidence,
Due to the difference of ionic species or energy, there are apparent differences for corresponding nuclear stopping power and electronstoppingpower, so that
The depth distribution of ion dam age is simultaneously uneven；The factors such as temperature also will affect migrating and developing for specific type of defects, cause from
The variation of sub- irradiation damage depth distribution.
Therefore, the device and method for how providing a kind of in-situ study ion irradiation damage optical signature depth distribution becomes
The problem of those skilled in the art urgent need to resolve.
Summary of the invention
In view of this, the present invention provides a kind of in-situ study ion irradiation damage optical signature depth distribution device and
Method avoids the destruction of the recovery and double measurement of irradiation damage after tradition research scheme sample irradiation to irradiation damage,
Realize the in-situ characterization of the depth distribution of ion irradiation damage optical signature.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of device of in-situ study ion irradiation damage optical signature depth distribution, comprising: diaphragm, electrostatic lenses, sample
Product console, optical lens and spectrometer, ion beam successively focus on after the diaphragm, the electrostatic lenses and are set to institute
The sample surfaces on sample console are stated, the light that sample is inspired through ion beam irradiation is incident upon spectrum through the optical lens
Instrument.
Preferably, the first deflection electricity is disposed with along direction of beam transport between the diaphragm and the electrostatic lenses
Pole, the second deflecting electrode.After ion beam is by the first deflecting electrode and the second deflecting electrode, the diverging of ion beam can be adjusted
Degree, guarantees the transmission quality of ion beam.
Preferably, first deflecting electrode uses quadrupole deflecting electrode, and second deflecting electrode is deflected using octupole
Electrode can be wide to nanoscale by ion beam focusing after diaphragm, quadrupole deflecting electrode, octupole deflecting electrode, electrostatic lenses
Degree.
It preferably, further include CCD camera, the CCD camera is set to the surface of the ion beam focusing point.Using poly-
Fluorescent material on burnt ion beam irradiation sample console, the fluorescent spot size and location information observed according to CCD camera,
In conjunction with the adjusting of sample console, it is ensured that ion beam focusing is in sample surfaces.
Preferably, the sample console moves console, it can be achieved that sample console nanoscale walks using high-precision
Long movement, minimum step is up to 5 nanometers.
A kind of method of in-situ study ion irradiation damage optical signature depth distribution, includes the following steps:
(1) ion beam is further focused ion beam using electrostatic lenses after diaphragm, obtain nanoscale width from
Beamlet；
(2) sample console is adjusted, it is ensured that ion beam focusing is in sample surfaces；
(3) position and the angle of optical lens are adjusted, it is ensured that the focus and ion beam of light path of optical spectrometer are poly- in sample surfaces
Burnt focus is in same position；
(4) different depth that sample console makes common focus point be in sample is adjusted, realizes that ion irradiation damage optics is special
Levy the in-situ characterization of depth distribution.
Preferably, the first deflection electricity is disposed with along direction of beam transport between the diaphragm and the electrostatic lenses
Pole, the second deflecting electrode, ion beam adjust divergence of ion beam degree by the first deflecting electrode and the second deflecting electrode, ensure that from
The transmission quality of beamlet.
Preferably, the fluorescent material on the ion beam irradiation sample console focused is utilized in the step (2), according to
The fluorescent spot size and location information that CCD camera is observed, in conjunction with the adjusting of sample console, it is ensured that ion beam focusing is in sample
Surface.
Preferably, is reversely irradiated from spectrometer optical fiber interface using laser pen in the step (3), using optical path can
Inverse property, the fluorescent spot size and location information observed according to CCD camera adjust optical lens position and angle, it is ensured that spectrum
The focus that the focus and step (2) intermediate ion beam of instrument optical path focus is in sample surfaces same position.
The beneficial effects of the present invention are:
The configuration of the present invention is simple, it is easy to operate, it is saturating using diaphragm, the first deflecting electrode, the second deflecting electrode and electrostatic
Mirror, by ion beam focusing to nanoscale width；Using optical lens confocal fluorescence, by debugging so that the focus of focused ion beam
Focus with spectrometer realizes the measurement of ion irradiation damage optical signature at public focus altogether in a focus, followed by
High-precision sample console realizes the movement of sample nanoscale step-length, to realize the ion irradiation damage of sample different depth
The in-situ study of optical signature.The present invention avoids irradiation damage after tradition research scheme sample irradiation using in-situ characterization technology
Destruction to irradiation damage of recovery and double measurement；In conjunction with total focusing principle, ion irradiation damage optical signature is realized
The in-situ characterization of depth distribution.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 attached drawing is structural schematic diagram of the invention.
Wherein, in figure,
1- diaphragm；2- electrostatic lenses；3- sample console；4- optical lens；5- spectrometer；6- sample；7- first is deflected
Electrode；The second deflecting electrode of 8-；9-CCD camera.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Attached drawing 1 is please referred to, the present invention provides a kind of dresses of in-situ study ion irradiation damage optical signature depth distribution
It sets, comprising: diaphragm 1, electrostatic lenses 2, sample console 3, optical lens 4 and spectrometer 5, ion beam successively pass through diaphragm 1, quiet
The sample surfaces being set on sample console 3 are focused on after electric lens 2, the light that sample 6 is inspired through ion beam irradiation is through light
It learns lens 4 and is incident upon spectrometer 5.Wherein diaphragm 1 can difference according to demand select different bores, can be subtracted using diaphragm 1
Small ion beam beam spot diameter,.
In another embodiment, the first deflection is disposed with along direction of beam transport between diaphragm 1 and electrostatic lenses 2
Electrode 7, the second deflecting electrode 8.After ion beam is by the first deflecting electrode 7 and the second deflecting electrode 8, ion beam can be adjusted
Divergence guarantees the transmission quality of ion beam.
In another embodiment, the first deflecting electrode 7 uses quadrupole deflecting electrode, and the second deflecting electrode 8 uses octupole
Deflecting electrode can be by ion beam focusing to nanometer after diaphragm 1, quadrupole deflecting electrode, octupole deflecting electrode, electrostatic lenses 2
Level width (is greater than 5nm).
The invention also includes CCD camera 9, CCD camera 9 is set to the surface of ion beam focusing point.Using focusing from
Fluorescent material on beamlet irradiation sample console 3, the fluorescent spot size and location information observed according to CCD camera 9, in conjunction with
The adjusting of sample console 3, it is ensured that ion beam focusing is in sample surfaces.
In another embodiment, sample console 3 moves console, it can be achieved that sample console 3 using high-precision
The movement of nanoscale step-length, minimum step is up to 5 nanometers.
A kind of method of in-situ study ion irradiation damage optical signature depth distribution, includes the following steps:
(1) ion beam is further focused using electrostatic lenses 2 after diaphragm 1, obtains nanoscale width by ion beam
Ion beam；
(2) sample console 3 is adjusted, it is ensured that ion beam focusing is in sample surfaces；
(3) position and the angle of optical lens 4 are adjusted, it is ensured that the focus and ion beam of 5 optical path of spectrometer are in sample surfaces
The focus of focusing is in same position；
(4) synchronous to open ion beam emittance device and spectrometer 5, it carries out sample irradiation at common focus point and damages optical signature
Spectra collection, adjusting sample console 3 makes common focus point be in the different depth of sample 6, realizes ion irradiation damage optics
The in-situ characterization of depths of features distribution.
In another embodiment, the first deflection is disposed with along direction of beam transport between diaphragm 1 and electrostatic lenses 2
Electrode 7, the second deflecting electrode 8, ion beam adjust divergence of ion beam degree by the first deflecting electrode 7 and the second deflecting electrode 8, protect
The transmission quality of ion beam is demonstrate,proved.
In another embodiment, the phosphor on the ion beam irradiation sample console 3 focused is utilized in step (2)
Material, the fluorescent spot size and location information observed according to CCD camera 9, in conjunction with the adjusting of sample console 3, it is ensured that ion beam
Focus on sample surfaces.
In another embodiment, it is reversely irradiated from the optical fiber interface of spectrometer 5 in step (3) using laser pen, benefit
With the invertibity of optical path, the fluorescent spot size and location information observed according to CCD camera 9 adjusts 4 position of optical lens and angle
Degree, it is ensured that the focus that the focus and step (2) intermediate ion beam of 5 optical path of spectrometer focus is in sample surfaces same position.
The configuration of the present invention is simple, it is easy to operate, utilize diaphragm 1, the first deflecting electrode 7, the second deflecting electrode 8 and electrostatic
Lens 2, by ion beam focusing to nanoscale width；Using 4 confocal fluorescence of optical lens, by debugging so that focused ion beam
Focus and the focus of spectrometer 5 realize the measurement of ion irradiation damage optical signature at public focus, then altogether in a focus
The movement that sample nanoscale step-length is realized using high-precision sample console 3, to realize the ion spoke of sample different depth
According to the in-situ study of damage optical signature.The present invention avoids spoke after tradition research scheme sample irradiation using in-situ characterization technology
The destruction of recovery and double measurement to irradiation damage according to damage；In conjunction with total focusing principle, realize that ion irradiation damages optics
The in-situ characterization of the depth distribution of feature.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of device of in-situ study ion irradiation damage optical signature depth distribution characterized by comprising diaphragm, quiet
Electric lens, sample console, optical lens and spectrometer, ion beam successively focus after the diaphragm, the electrostatic lenses
In the sample surfaces being set on the sample console, the light that sample is inspired through ion beam irradiation is through the optical lens mirror
Enter to spectrometer.
2. a kind of device of in-situ study ion irradiation damage optical signature depth distribution according to claim 1, special
Sign is, is disposed with the first deflecting electrode, second partially along direction of beam transport between the diaphragm and the electrostatic lenses
Turn electrode.
3. a kind of device of in-situ study ion irradiation damage optical signature depth distribution according to claim 2, special
Sign is that first deflecting electrode uses quadrupole deflecting electrode, and second deflecting electrode uses octupole deflecting electrode.
4. a kind of device of in-situ study ion irradiation damage optical signature depth distribution according to claim 1 or 3,
It is characterized in that, further includes CCD camera, the CCD camera is set to the surface of the ion beam focusing point.
5. a kind of device of in-situ study ion irradiation damage optical signature depth distribution according to claim 1, special
Sign is that the sample console moves console using high-precision.
6. a kind of method of in-situ study ion irradiation damage optical signature depth distribution, which comprises the steps of:
(1) ion beam is further focused using electrostatic lenses after diaphragm, obtains the ion of nanoscale width by ion beam
Beam；
(2) sample console is adjusted, it is ensured that ion beam focusing is in sample surfaces；
(3) position and the angle of optical lens are adjusted, it is ensured that the focus and ion beam of light path of optical spectrometer were focused in sample surfaces
Focus is in same position；
(4) different depth that sample console makes common focus point be in sample is adjusted, realizes that ion irradiation damage optical signature is deep
Spend the in-situ characterization of distribution.
7. a kind of method of in-situ study ion irradiation damage optical signature depth distribution according to claim 6, special
Sign is, is disposed with the first deflecting electrode, second partially along direction of beam transport between the diaphragm and the electrostatic lenses
Turn electrode, ion beam adjusts divergence of ion beam degree by the first deflecting electrode and the second deflecting electrode.
8. a kind of method of in-situ study ion irradiation damage optical signature depth distribution according to claim 6 or 7,
It is characterized in that, using the fluorescent material on the ion beam irradiation sample console focused in the step (2), according to CCD camera
The fluorescent spot size and location information observed, in conjunction with the adjusting of sample console, it is ensured that ion beam focusing is in sample surfaces.
9. a kind of method of in-situ study ion irradiation damage optical signature depth distribution according to claim 8, special
Sign is, is reversely irradiated from spectrometer optical fiber interface in the step (3) using laser pen, utilizes the invertibity of optical path, root
The fluorescent spot size and location information observed according to CCD camera adjusts optical lens position and angle, it is ensured that light path of optical spectrometer
The focus that focus and step (2) intermediate ion beam focus is in sample surfaces same position.
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| CN201910605492.XA CN110320191A (en) | 2019-07-05 | 2019-07-05 | The device and method of in-situ study ion irradiation damage optical signature depth distribution |
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| CN201910605492.XA CN110320191A (en) | 2019-07-05 | 2019-07-05 | The device and method of in-situ study ion irradiation damage optical signature depth distribution |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583668Y (en) * | 2002-12-02 | 2003-10-29 | 中国科学技术大学 | Device for proceeding measuring and analysis of structure and composition of combined sample |
| CN101246132A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Focused ion beam equipment and focused ion beam detecting method |
| CN101520415A (en) * | 2008-02-29 | 2009-09-02 | 中国科学院大连化学物理研究所 | Micro-fluidic laser-induced fluorescence detector with functions of automatic positioning and focusing |
| CN101882551A (en) * | 2005-12-02 | 2010-11-10 | 阿利斯公司 | Ion source, system and method |
| CN106066318A (en) * | 2016-06-14 | 2016-11-02 | 中国科学院长春光学精密机械与物理研究所 | A kind of method and device of on-line testing optical element laser damage |
-
2019
- 2019-07-05 CN CN201910605492.XA patent/CN110320191A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583668Y (en) * | 2002-12-02 | 2003-10-29 | 中国科学技术大学 | Device for proceeding measuring and analysis of structure and composition of combined sample |
| CN101882551A (en) * | 2005-12-02 | 2010-11-10 | 阿利斯公司 | Ion source, system and method |
| CN101246132A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Focused ion beam equipment and focused ion beam detecting method |
| CN101520415A (en) * | 2008-02-29 | 2009-09-02 | 中国科学院大连化学物理研究所 | Micro-fluidic laser-induced fluorescence detector with functions of automatic positioning and focusing |
| CN106066318A (en) * | 2016-06-14 | 2016-11-02 | 中国科学院长春光学精密机械与物理研究所 | A kind of method and device of on-line testing optical element laser damage |
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