CN110319945A - A kind of silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant and production method - Google Patents
A kind of silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant and production method Download PDFInfo
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- CN110319945A CN110319945A CN201910538238.2A CN201910538238A CN110319945A CN 110319945 A CN110319945 A CN 110319945A CN 201910538238 A CN201910538238 A CN 201910538238A CN 110319945 A CN110319945 A CN 110319945A
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- silicon carbide
- tungsten
- rhenium alloy
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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Abstract
The invention discloses a kind of silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant and production method, as toughening silicon carbide flexible fiber substrate and it is bonded in the tungsten-rhenium alloy film of toughening silicon carbide flexible fiber substrate front surface including braiding composite toughening silicon carbide fibre and forms；Tungsten-rhenium alloy film is connected by thermal spraying with tungsten rhenium alloy wire, and tungsten-rhenium alloy film surface applies lanthanum-strontium-cobalt-oxygen powder.The present invention is based on pyroelectric effects, can export as electronic signals temperature under worst hot case, and pass through the relationship of temperature and output voltage, realize the measurement of temperature.In addition it utilizes surface filming technology, will be structure formed, and adds lanthanum-strontium-cobalt-oxygen powder and effectively prevent the deterioration failure under high temperature as protective layer, while promoting pyroelectric effect, promotes sensitivity by increasing pyroelectric signal.Using toughening silicon carbide flexible fiber, while guaranteeing hot operation, guarantee overall flexibility.
Description
Technical field
The invention belongs to micro temperature sensor chip technology fields, and in particular to a kind of highly sensitive flexible carbonization of high temperature resistant
Silicon substrate temperature sensor and production method.
Background technique
The thermocouple invention of early stage was in 1821, and thermocouple temperature sensor measures, in vapor (steam) temperature to quick-fried after that
Very big success is achieved in the fields such as thermal response, heating, the pyrometry body surface temperature of fried product.Its structure is simple,
It is easily manufactured, measurement range is wide, precision is high, inertia is small and output signal be convenient for teletransmission the advantages that, become standardized survey
Measure equipment.In these sensors, high temperature sensor has critical role in measuring the temperature under bad working environments, this
Sensor all achieves achievement in the configuration of many different sensors.
However, to be directed to special operation condition, it is miniaturized, currently not yet mature method, and based on MEMS technology
New-type thermocouple structure is the new development direction for solving the problems, such as this.There is the research promoted based on this architectural characteristic recently
Achievement, such as the integrated structure using chrome-nickel alloy thin film and ceramics.Although these proposals have certain effect, do not solve still
Temperature certainly under long-time high temperature measures problem.
For traditional thermocouple temperature sensor generally using thermocouple wire as core work component, operating temperature is high, but volume compared with
Greatly, it is difficult to be applied under special industrial requirement.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, the technical problem to be solved by the present invention is that it is high to provide a kind of high temperature resistant
The silicon carbide-based temperature sensor of sensitive flexibility and production method also have both while meeting that temperature measures under long-time high temperature
The characteristics of micromation, and keep flexible, solve problems of the prior art --- provide high temperature resistant highly sensitive temperature
It senses effect simultaneously, realizes flexible installing.
The invention adopts the following technical scheme:
A kind of highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant, including substrate are provided with tungsten-rhenium alloy in substrate
The surface of film, tungsten-rhenium alloy film is coated with lanthanum-strontium-cobalt-oxygen powder, and the two sides of tungsten-rhenium alloy film are separately connected tungsten-rhenium alloy
Silk.
Specifically, substrate is prepared using braiding composite toughening silicon carbide fibre material, with a thickness of 1mm ± 0.2mm.
Specifically, tungsten-rhenium alloy film is prepared using temperature sensing material, with a thickness of 2 μm ± 0.5 μm.
Further, the front of substrate is arranged in the bonding of tungsten-rhenium alloy film.
Specifically, tungsten-rhenium alloy film surface coating lanthanum-strontium-cobalt-oxygen powder with a thickness of 5 μm ± 1 μm.
Another technical solution of the invention is a kind of preparation of the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant
Method, comprising the following steps:
S1, toughening silicon carbide flexible fiber substrate is woven using composite toughening silicon carbide；
S2, tungsten-rhenium alloy film is deposited in toughening silicon carbide flexible fiber substrate using magnetron sputtering；
S3, tungsten-rhenium alloy film is connected with tungsten rhenium alloy wire using thermal spraying；
S4, tungsten-rhenium alloy film surface apply lanthanum-strontium-cobalt-oxygen powder.
Specifically, braiding toughening silicon carbide flexible fiber line footpath is 1mm ± 0.2mm in step S1, compiled using 45 degree
System.
Specifically, preparing power is 200W in step S2, vacuum degree is ± 0.2 μ Torr of 1 μ Torr.
Specifically, in step S3, thermal spraying uses plasma arc spraying, particle rapidity in 200m/s, tungsten rhenium alloy wire
Diameter is 3mm ± 0.2mm.
Specifically, in step S4, lanthanum-strontium-cobalt-oxygen powder is applied using silk-screen printing, the partial size of lanthanum-strontium-cobalt-oxygen powder is 10 μm ±
2μm。
Compared with prior art, the present invention at least has the advantages that
The present invention is based on pyroelectric effects, the material of this high Seebeck coefficient resistant to high temperature using tungsten-rhenium alloy, can be in height
Under warm operating condition, temperature is exported as electronic signals, and passes through the relationship of temperature and output voltage, realizes the measurement of temperature,
In addition it utilizes surface filming technology, will be structure formed, and is added to lanthanum-strontium-cobalt-oxygen powder, effective anti-as protective layer
Stop the deterioration failure under high temperature, while having promoted pyroelectric effect, promotes sensitivity by increasing pyroelectric signal.
Further, using toughening silicon carbide flexible fiber, while guaranteeing hot operation, guarantee overall flexibility.
Further, using tungsten-rhenium alloy film, pyroelectric effect is ensured.
Further, high temperature protection is provided using strontium cobalt oxide powder and increase thermoelectric sensitivity.
The invention also discloses a kind of production methods of the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant, using multiple
Combination toughness reinforcing silicon carbide weaves toughening silicon carbide flexible fiber substrate and guarantees material flexibility tolerable 1400 degree or more work temperature simultaneously
Degree is deposited tungsten-rhenium alloy film in toughening silicon carbide flexible fiber substrate using magnetron sputtering and guarantees that pyroelecthc properties reduce simultaneously
Tungsten-rhenium alloy film is connected with tungsten rhenium alloy wire using thermal spraying and guarantees thermoelectricity capability consistency by the influence to temperature field air-flow
It solves the problems, such as cold junction compensation, provide high temperature protection using tungsten-rhenium alloy film surface coating lanthanum-strontium-cobalt-oxygen powder end and increases thermoelectricity
Sensitivity, to realize the flexible silicon carbide-based temperature sensor production of reliable sensitive micromation.
In conclusion the present invention realizes under long-time high temperature temperature while measure, the characteristics of also having had both micromation,
And providing the highly sensitive temperature sensing effect of high temperature resistant simultaneously, realize flexible installing.
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of chip of the present invention；
Fig. 2 is the operation schematic diagram of chip of the present invention；
Fig. 3 is chip operation thermoelectricity relational graph.
Wherein: 1. substrates；2. tungsten-rhenium alloy film；3. tungsten rhenium alloy wire；4. lanthanum-strontium-cobalt-oxygen powder.
Specific embodiment
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
"front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " side ", " one end ", " one side " etc.
The orientation or positional relationship of instruction is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of the description present invention and letter
Change description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with specific orientation construct and
Operation, therefore be not considered as limiting the invention.In addition, in the description of the present invention, unless otherwise indicated, " multiples' "
It is meant that two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
The present invention provides a kind of highly sensitive silicon carbide-based temperature sensors of flexibility of high temperature resistant, including braiding composite toughening carbon
SiClx fiber is as toughening silicon carbide flexible fiber substrate and is bonded in the W-Re of toughening silicon carbide flexible fiber substrate front surface
Alloy firm composition；Tungsten-rhenium alloy film is connected by thermal spraying with tungsten rhenium alloy wire, and tungsten-rhenium alloy film surface applies lanthanum-strontium
Cobalt oxide powder.The present invention is based on pyroelectric effects, can export as electronic signals temperature, and pass through temperature under worst hot case
The relationship of degree and output voltage, realizes the measurement of temperature.In addition it utilizes surface filming technology, will be structure formed, and adds
Lanthanum-strontium-cobalt-oxygen powder as protective layer effectively prevents the deterioration failure under high temperature, while promoting pyroelectric effect, passes through
Increase pyroelectric signal and promotes sensitivity.Using toughening silicon carbide flexible fiber, while guaranteeing hot operation, guarantee whole soft
Property.
Referring to Fig. 1, a kind of highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant of the present invention, including substrate 1, W-Re
Alloy firm 2, tungsten rhenium alloy wire 3 and lanthanum-strontium-cobalt-oxygen powder 4, tungsten-rhenium alloy film 2 are bonded the front that substrate 1 is arranged in, lanthanum-strontium
Cobalt oxide powder 4 is coated in the surface of tungsten-rhenium alloy film 2, and the two sides of tungsten-rhenium alloy film 2 pass through thermal spraying respectively and W-Re closes
Spun gold 3 is connected.
Substrate 1 is prepared using braiding composite toughening silicon carbide fibre material, and thickness is in 1mm ± 0.2mm.
Tungsten-rhenium alloy film 2 is prepared using temperature sensing material, and 2 μm ± 0.5 μm of thickness.
Lanthanum-strontium-cobalt-oxygen powder 4 with a thickness of 5 μm ± 1 μm.Lanthanum-strontium-cobalt-oxygen powder is applied using silk-screen printing, partial size 10 is micro-
Rice.
The diameter of tungsten rhenium alloy wire is 3 millimeters.
Substrate 1 is prepared using braiding composite toughening silicon carbide fibre.
Tungsten-rhenium alloy film 2 be temperature sensing material, including mass fraction than for 8:2 tungsten-rhenium alloy and mass fraction ratio be 9:
1 tungsten-rhenium alloy pairing.Sensor uses Seebeck effect for principle, experiences node temperature by temperature sensing material, output corresponds to
Voltage tester temperature range is room temperature to 1400 degree, and measurement error is less than positive and negative 2%, and sensitivity is the every Kelvin of 32 microvolts.
Working principle are as follows:
Using the Seebeck effect of tungsten-rhenium alloy material as sensitivity principle, Seebeck effect refers in two kinds of metals A and B
In the circuit of composition, if keeping the temperature of two contact points different, will occur electric current, referred to as thermocurrent in the loop.Accordingly
Electromotive force be known as thermoelectrical potential, direction depends on the direction of temperature gradient.
The essence of Seebeck effect is that contact potential difference (voltage) can be generated when the contact of two kinds of metals, which depends on
Electronics in two kinds of metals overflows in function difference and two kinds of metals caused by electron concentration difference.
The mechanism for generating metal Seebeck effect is complex, mainly at two aspects:
1. diffusion of the electronics from hot end to cold end.However diffusion here is not concentration gradient (because of the electronics in metal
Pressure, Concentration, Temperature is unrelated) caused by, but the electronics in hot end has caused by higher energy and speed.Obviously, if
It is this effect be it is main, then the coefficient of the Seebeck effect generated in this way should be negative.
2. the influence of electron mean free path.Because although there are many free electrons in metal, to conductive contributive
So-called conduction electronics mainly near Fermi energy level within the scope of 2kT.And the mean free path of these electronics with scattered
The situation of (phon scattering, impurity and defect scattering) and energy state density are related with the situation of change of energy.
If increasing if the mean free path of hot end electronics is the increase with electron energy, the electronics in hot end
There to be biggish energy due to one side, and on the other hand there is biggish mean free path again, then hot end electronics will be to cold end
It transports, is main process, so that Seebeck effect will be generated；Metal Al, Mg, Pd, Pt etc. are i.e. such.
On the contrary, if reducing if the mean free path of hot end electronics is the increase with electron energy, hot end
Although electronics have biggish energy, their mean free path but very little, therefore electronics transport will mainly from
Cold end is transported to hot end, so that Seebeck effect will be generated；Ni metal, Au, Li et al., that is, such.
The calculation formula of Seebeck effect potential difference:
Wherein, SAWith SBThe Seebeck coefficient of respectively two kinds materials.
When sensor chip is acted on by a certain hot-fluid, since temperature field changes, according to Seebeck effect principle,
Corresponding electromotive force can be generated, outside can receive corresponding electric signal, therefore the output voltage of sensor chip is as locating for it
Temperature value determine, sensor chip realize by the temperature transition of physical quantity be convenient for the function for the voltage signal for acquiring and measuring
Energy.
A kind of production method of the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant of the present invention, comprising the following steps:
S1, toughening silicon carbide flexible fiber substrate is woven using composite toughening silicon carbide；
Braiding toughening silicon carbide flexible fiber line footpath is 1mm ± 0.2mm, is worked out using 45 degree, integral thickness 1mm ±
0.2mm。
S2, tungsten-rhenium alloy film is deposited in toughening silicon carbide flexible fiber substrate using magnetron sputtering；
Preparing 200 watts of power, vacuum degree is ± 0.2 μ Torr of 1 μ Torr, 2 μm ± 0.5 μm of integral thickness.
S3, tungsten-rhenium alloy film is connected with tungsten rhenium alloy wire using thermal spraying；
Thermal spraying uses plasma arc spraying, particle rapidity in 200 metre per second (m/s)s, the diameter of tungsten rhenium alloy wire be 3mm ±
0.2mm。
S4, tungsten-rhenium alloy film surface apply lanthanum-strontium-cobalt-oxygen powder.
It applies lanthanum-strontium-cobalt-oxygen powder to apply using silk-screen printing, 10 μm ± 2 μm of partial size, integral thickness is 5 μm ± 1 μm.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being described and shown in usually here in attached drawing is real
The component for applying example can be arranged and be designed by a variety of different configurations.Therefore, below to the present invention provided in the accompanying drawings
The detailed description of embodiment be not intended to limit the range of claimed invention, but be merely representative of of the invention selected
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without creative efforts
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 3, indicate that sensor output voltage varies with temperature situation, abscissa is temperature, degrees Celsius,
Ordinate is voltage, and unit millivolt indicates that the thermoelectricity working performance of sensor, output corresponding voltage Range of measuring temp are room temperature
To 1400 degree, measurement error is less than positive and negative 2%, and sensitivity is the every Kelvin of 32 microvolts.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press
According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention
Protection scope within.
Claims (10)
1. a kind of highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant, which is characterized in that including substrate (1), in substrate (1)
It is provided with tungsten-rhenium alloy film (2), the surface of tungsten-rhenium alloy film (2) is coated with lanthanum-strontium-cobalt-oxygen powder (4), tungsten-rhenium alloy film
(2) two sides are separately connected tungsten rhenium alloy wire (3).
2. the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant according to claim 1, which is characterized in that substrate
(1) it is prepared using braiding composite toughening silicon carbide fibre material, with a thickness of 1mm ± 0.2mm.
3. the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant according to claim 1, which is characterized in that W-Re closes
Gold thin film (2) is prepared using temperature sensing material, with a thickness of 2 μm ± 0.5 μm.
4. the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant according to claim 3, which is characterized in that W-Re closes
Front of gold thin film (2) the bonding setting in substrate (1).
5. the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant according to claim 1, which is characterized in that W-Re closes
Gold thin film (2) surface apply lanthanum-strontium-cobalt-oxygen powder (4) with a thickness of 5 μm ± 1 μm.
6. a kind of side for preparing the highly sensitive silicon carbide-based temperature sensor of flexibility of high temperature resistant described in any one of claims 1 to 5
Method, which comprises the following steps:
S1, toughening silicon carbide flexible fiber substrate is woven using composite toughening silicon carbide；
S2, tungsten-rhenium alloy film is deposited in toughening silicon carbide flexible fiber substrate using magnetron sputtering；
S3, tungsten-rhenium alloy film is connected with tungsten rhenium alloy wire using thermal spraying；
S4, tungsten-rhenium alloy film surface apply lanthanum-strontium-cobalt-oxygen powder.
7. the silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant according to claim 6 and production method, feature
It is, in step S1, braiding toughening silicon carbide flexible fiber line footpath is 1mm ± 0.2mm, is worked out using 45 degree.
8. the silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant according to claim 6 and production method, feature
It is, in step S2, preparing power is 200W, and vacuum degree is ± 0.2 μ Torr of 1 μ Torr.
9. the silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant according to claim 6 and production method, feature
Be, in step S3, thermal spraying uses plasma arc spraying, particle rapidity in 200m/s, the diameter of tungsten rhenium alloy wire be 3mm ±
0.2mm。
10. the silicon carbide-based temperature sensor of the highly sensitive flexibility of high temperature resistant according to claim 6 and production method, feature
It is, in step S4, lanthanum-strontium-cobalt-oxygen powder is applied using silk-screen printing, the partial size of lanthanum-strontium-cobalt-oxygen powder is 10 μm ± 2 μm.
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| CN201910538238.2A CN110319945B (en) | 2019-06-20 | 2019-06-20 | High-temperature-resistant high-sensitivity flexible silicon carbide-based temperature sensor and manufacturing method thereof |
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| CN113739945A (en) * | 2021-07-22 | 2021-12-03 | 西安交通大学 | Gas film composite tungsten-rhenium alloy film thermocouple based on surface micro-column array |
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Cited By (2)
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| CN113739945A (en) * | 2021-07-22 | 2021-12-03 | 西安交通大学 | Gas film composite tungsten-rhenium alloy film thermocouple based on surface micro-column array |
| US11598676B2 (en) | 2021-07-22 | 2023-03-07 | Xi'an Jiaotong University | Tungsten-rhenium composite thin film thermocouple based on surface micropillar array with gas holes |
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