CN110316693A - A method of micro/nano level electric mechanical switch is regulated and controled by local applied stress - Google Patents
A method of micro/nano level electric mechanical switch is regulated and controled by local applied stress Download PDFInfo
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- CN110316693A CN110316693A CN201910589098.1A CN201910589098A CN110316693A CN 110316693 A CN110316693 A CN 110316693A CN 201910589098 A CN201910589098 A CN 201910589098A CN 110316693 A CN110316693 A CN 110316693A
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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Abstract
The present invention acts on a pair of of local elongation compression stress on a piece zinc oxide piezoelectric semiconductor nano fiber, change the size of local stress to change the C-V characteristic of zinc oxide piezoelectric semiconductor nano fiber, realization is regulated and controled its electric current by local stress and whether is connected and conducting electric current size.Show themselves in that no matter applied voltage is positive and negative, and the electric current in any one direction cannot all pass through fiber when applied voltage amplitude is lower than first charge threshold level；When applied voltage amplitude is higher than first charge threshold level and is lower than voltage second critical value, electric current is flowed to a direction, but cannot be flowed to another direction；When applied voltage amplitude is higher than the second critical value, electric current two-way flow；And influence of the local stress size to above-mentioned two charge threshold level size is significant.Local stress is switched just as one, in the case where given voltage amplitude, determine zinc oxide piezoelectric semiconductor fiber in one or both directions whether the size of conducting electric current and conducting electric current.
Description
Technical field:
The present invention relates to a kind of methods for regulating and controlling micro/nano level electric mechanical switch by local applied stress, belong to micro-nano
Devices field.
Background technique:
With being constantly progressive for microelectronic technique, the device integration density on one single chip is higher and higher, can be realized
Under the premise of said function, micromation, miniaturization are increasingly becoming the development trend of hardware.Therefore the research of micro/nano level device
Have become current forward position and hot spot.
In order to meet the growth requirement of device miniaturization, in recent years, many scientific domains relevant to nanometer, such as nanometer
Medicine, nano biological, nanoelectronics etc. all achieve many important achievements.Micro-nano device is in many important sections
Skill field, as the communications field, aerospace and many Material Fields are all widely used.2009, " the Massachusetts reason of famous American
Engineering college's technology summary " periodical will be based on being chosen as ten big emerging technologies by the micro-nano device of theoretical basis of piezoelectron
One of.In recent years, the research for the nano structure of zinc oxide that numerous researchers are endeavoured, has been achieved for many systematicness
And initiative research achievement.These achievements by the interactive interface of sensor, people and silicon-based technologies, MEMS, receive
Rice robot and active electronic flexible device etc. fields generate important application.
Summary of the invention:
The present invention is provided a kind of by local applied stress regulation to solve the above-mentioned problems of the prior art
The method of micro/nano level electric mechanical switch can be controlled on zinc oxide piezoelectric semiconductor fiber by changing the size of local stress
Electric current is bidirectionally conductive, one-way conduction or two-way is not turned on and the size of conducting electric current.
The technical solution adopted in the present invention has: a kind of side regulating and controlling micro/nano level electric mechanical switch by local applied stress
Method acts on a pair of of local elongation or compression stress on a piece N-type zinc oxide piezoelectric semiconductor nano fiber；
The N-type zinc oxide piezoelectric semiconductor nano fiber meets piezoelectric semiconductor's phenomenological theory equation of motion:
Wherein T is stress tensor, and f is physical strength vector, and ρ mass density, u is mechanical displacement vector, and D is electron displacement arrow
Amount, q indicate that elementary charge carried charge, p and n are the concentration of hole and electronics,WithIt is the impurity concentration of donor and receptor,WithIt is the current density of hole and electronics respectively.
Further, the N-type zinc oxide piezoelectric semiconductor nano fiber also meets this structure of piezoelectric semiconductor's phenomenological theory
Equation:
Wherein S is strain tensor, and e is electric field intensity,It is resilient flexibility constant, dkijIt is piezoelectric constant,It is dielectric
Constant,WithIt is carrier mobility,WithCarrier diffusion constant.
Further, the strain tensor S of the N-type zinc oxide piezoelectric semiconductor nano fiber, displacement vector u, electric-field strength
Spend E and potentialAlso meet following relational expression:
Further, boundary condition of the N-type zinc oxide piezoelectric semiconductor nano fiber at the x=-L of left end are as follows: position
It moves u (- L)=0, electron concentration n=1021, potentialBoundary condition at right end x=L are as follows: stress T=0, electron concentration
N=1021, potential
Further, the length 2a of the loading area of local elongation or compression stress is partly led much smaller than N-type zinc oxide piezoelectric
The total length 2L of body fiber.
Further, as V=0, due to the application of local stress, N-type zinc oxide piezoelectric semiconductor fiber can be in part
Loading area and its nearby generation gesture well/potential barrier；When local stress amplitude is smaller, gesture well/potential barrier is relative to loading area
Approximate inversion symmetry is presented in center, and when local stress amplitude increases, gesture well/potential barrier skew-symmetry is destroyed, to occur
Two two charge threshold levels.
Further, under the action of given local stress: when the amplitude of applied voltage V is lower than first charge threshold level
When, gesture well/potential barrier caused by local stress will prevent the electric current of both direction from passing through zinc oxide piezoelectric semiconductor nano fiber；
When applied voltage amplitude is higher than first charge threshold level and is lower than voltage second critical value, which is only prevented
The electric current in one direction and allow the electric current in another direction to pass through zinc oxide piezoelectric semiconductor nano fiber；When applied voltage width
When value is higher than the second critical value, the electric current of both direction can pass through zinc oxide piezoelectric semiconductor nano fiber.
The invention has the following beneficial effects: the configuration of the present invention is simple, easy to accomplish.In the feelings of given applied voltage amplitude
Under condition, the micro/nano level electric mechanical switch can determine that zinc oxide piezoelectric semiconductor is fine by changing the size of local applied stress
Electric current in dimension be bidirectionally conductive, one-way conduction or it is two-way be not turned on and the size of conducting electric current, this is Mechanical course
The electrical behavior of micro/nano level device provides a kind of means.
Detailed description of the invention:
Fig. 1 is one embodiment structure of the present invention by the method for local loading stress regulation and control micro/nano level electric mechanical switch
Schematic diagram.
Fig. 2 a is the potential provided in an embodiment of the present invention at voltage V=0V (volt) and difference given local stress F effect
φ is along zinc oxide nano fiber distribution schematic diagram.
Fig. 2 b be it is provided in an embodiment of the present invention in given local stress F=300nN (receive ox) and it is different it is given outside be powered on
V is pressed to act on lower potential φ along zinc oxide nano fiber distribution schematic diagram.
Fig. 3 is the VA characteristic curve schematic diagram provided in an embodiment of the present invention under different given local stress F effects.
Specific embodiment:
The present invention passes through the method that local applied stress regulates and controls micro/nano level electric mechanical switch, is mainly concerned with a pair of of part
It stretches or compression stress acts on a N-type zinc oxide piezoelectric semiconductor nano fiber.Wherein N-type zinc oxide piezoelectric semiconductor
Fiber meets piezoelectric semiconductor's phenomenological theory equation of motion:
Wherein T is stress tensor, and f is physical strength vector, and ρ mass density, u is mechanical displacement vector, and D is electron displacement arrow
Amount, q indicate that elementary charge carried charge, p and n are the concentration of hole and electronics,WithIt is the impurity concentration of donor and receptor,WithIt is the current density of hole and electronics respectively.(1)1It is the equation of motion (Newton's law), (1)2It is electrostatic charge
Equation (Gauss law), (1)3(1)4It is the charge conservation equation of hole and electronics respectively.
Wherein N-type zinc oxide piezoelectric semiconductor fiber also meets piezoelectric semiconductor's phenomenological theory constitutive equation:
Wherein S is strain tensor, and e is electric field intensity,It is resilient flexibility constant, dkijIt is piezoelectric constant,It is dielectric
Constant,WithIt is carrier mobility,WithCarrier diffusion constant.(2)1(2)2It is the common sheet of piezoelectric material
Structure relationship, (2)3(2)4It is then used for hole current and electronic current, it is dense including the drift current under electric field action and by carrier
Spend dissufion current caused by gradient.
Wherein the strain tensor S of N-type zinc oxide piezoelectric semiconductor fiber, displacement vector u, electric field strength E and potentialIt is also full
The following relational expression of foot:
Wherein boundary condition of the N-type zinc oxide piezoelectric semiconductor fiber at the x=-L of left end are as follows: displacement components u (- L)=0；Electricity
Sub- concentration n=1021；PotentialBoundary condition at right end x=L are as follows: stress T=0；Electron concentration n=1021；Potential
One pair of them local elongation (compression) stress, the length 2a of loading area partly lead much smaller than N-type zinc oxide piezoelectric
The total length 2L of body fiber.
Wherein as V=0, due to the application of local stress, zinc oxide piezoelectric semiconductor fiber can be in local loading region
And its nearby generate gesture well/potential barrier.When local stress amplitude is smaller, gesture well/potential barrier is presented relative to the center of loading area
Approximate inversion symmetry；When local stress amplitude is gradually increased, due to the influence of non-linear effect, gesture well/potential barrier antisymmetry
Property be gradually destroyed, thus occur two two charge threshold levels.
Wherein under the action of given local stress: when the amplitude of applied voltage V is lower than first charge threshold level, appointing
The electric current in what direction cannot all flow through zinc oxide piezoelectric semiconductor fiber；When the amplitude of applied voltage V is greater than first electricity
When pressing critical value less than second critical voltage, electric current can be flowed to a direction of zinc oxide piezoelectric semiconductor fiber, but
If the sign modification of voltage, will not be flowed to another direction；When the amplitude of applied voltage V is more than second voltage critical
When value, the sign modification of voltage, electric current can be with two-way flow.
Wherein local stress size influences two charge threshold level sizes of micro/nano level electric mechanical switch significant.It answers part
Force value is bigger, and two charge threshold levels are bigger, but simple linear relationship is not presented
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.
In the embodiment of the method that the present invention regulates and controls micro/nano level electric mechanical switch by local applied stress, structural representation
Figure is as shown in Figure 1.In Fig. 1, which is the intermediate N-type zinc oxide pressure for applying local elongation stress F
Electric semiconductor nano fiber.Wherein N-type zinc oxide piezoelectric semiconductor fiber, including following geometric parameter: fiber overall length 2L=60 μ
m；R=0.02875 μm of fiber radius；Local stress loads 2a=1.2 μm of section length；Wherein N-type zinc oxide piezoelectric semiconductor is fine
Tie up the boundary condition at the x=-L of left end are as follows: displacement components u (- L)=0；Electron concentration n=1021；PotentialAt right end x=L
Boundary condition are as follows: stress T=0；Electron concentration n=1021；Potential
The present invention is to this zinc oxide piezoelectric semiconductor nano fiber under different local loading F and applied voltage V effect
Electrical behavior is investigated, and concrete outcome is shown in Fig. 2 a, Fig. 2 b and Fig. 3.
Specifically, in Fig. 2 a, applied voltage V=0 is given, i.e. zinc oxide piezoelectric semiconductor nano fiber both ends electricity is short
Road gives under local stress F=10nN, F=30nN and F=50nN effect, potentialIt is partly led along zinc oxide piezoelectric
The distribution situation of body nanofiber.Due to the presence of piezoelectric effect, there is a recess and a protrusion in Potential Distributing.Its concave
Concave portion point is known as local gesture well, and convex portion is known as local barrier.And due to the presence of nonlinear effect, gesture well and potential barrier are not
With center skew-symmetry, so as to cause the VA characteristic curve of zinc oxide piezoelectric semiconductor nano fiber, also not have center anti-
Symmetry generates two charge threshold levels.
In Fig. 2 b, additional local stress F=300nN is given, is given in different applied voltage V=3V (volt), V=6V, V
Under=9V and V=12V effect, potentialAlong the distribution of zinc oxide piezoelectric semiconductor nano fiber.It can be seen that due to office
The presence of portion gesture well and local barrier, as applied voltage V=3V and V=6V, to zinc oxide nano fiber Potential Distributing
Influence can not pass through gesture well/potential barrier, i.e. potential on the left of local stress loading zoneIt is always 0.As applied voltage V=9V and V
When=12V, since applied voltage is sufficiently large, gesture well/potential barrier can be overcome, zinc oxide nano fiber local stress is loaded
Potential on the left of areaIt has an impact.
Fig. 3 is main result of the present invention.Specifically, it is fine to give the embodiment zinc oxide piezoelectric semiconductor nano by Fig. 3
Tie up the VA characteristic curve under local stress F=240nN, F=260nN, F=280nN and F=300nN effect.In figure
It can be seen that when applied voltage amplitude be lower than first charge threshold level when, by the electric current on fiber be 0, i.e., no matter voltage
Positive and negative, the electric current in any one direction cannot all pass through fiber；When applied voltage amplitude is higher than first critical value and less than the
When two critical values, electric current can be flowed to a direction, but cannot be flowed to another direction；When applied voltage amplitude is higher than
When the second critical value, electric current can be with two-way flow；And applied stress size influences significantly above-mentioned two charge threshold level size.
Therefore, local stress just as one switch, in that case it can be decided that zinc oxide piezoelectric semiconductor fiber in one or both directions whether
Conducting electric current.The present invention also provides a kind of basic ideas and hand simultaneously for the electrical behavior of Mechanical course piezoelectric semiconductor fiber
Section.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
It for member, can also make several improvements without departing from the principle of the present invention, these improvement also should be regarded as of the invention
Protection scope.
Claims (7)
1. a kind of method for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that: draw a pair of of part
It stretches or compression stress acts on a N-type zinc oxide piezoelectric semiconductor nano fiber；
The N-type zinc oxide piezoelectric semiconductor nano fiber meets piezoelectric semiconductor's phenomenological theory equation of motion:
Wherein T is stress tensor, and f is physical strength vector, and ρ mass density, u is mechanical displacement vector, and D is electron displacement vector, q table
Show that elementary charge carried charge, p and n are the concentration of hole and electronics,WithIt is the impurity concentration of donor and receptor,With
It is the current density of hole and electronics respectively.
2. the method as described in claim 1 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
The N-type zinc oxide piezoelectric semiconductor nano fiber also meets piezoelectric semiconductor's phenomenological theory constitutive equation:
Wherein S is strain tensor, and e is electric field intensity,It is resilient flexibility constant, dkijIt is piezoelectric constant,It is dielectric constant,WithIt is carrier mobility,WithCarrier diffusion constant.
3. the method as claimed in claim 2 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
Strain tensor S, displacement vector u, electric field strength E and the potential of the N-type zinc oxide piezoelectric semiconductor nano fiberAlso meet
Following relational expression:
4. the method as claimed in claim 3 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
Boundary condition of the N-type zinc oxide piezoelectric semiconductor nano fiber at the x=-L of left end are as follows: displacement components u (- L)=0, electronics is dense
Spend n=1021, potentialBoundary condition at right end x=L are as follows: stress T=0, electron concentration n=1021, potential
5. the method as described in claim 1 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
The loading area length 2a of local elongation or compression stress is greater than 0 and is less than or equal to N-type zinc oxide piezoelectric semiconductor nano fibre
Tie up 1st/50th of total length 2L.
6. the method as claimed in claim 5 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
Due to the application of local stress, N-type zinc oxide piezoelectric semiconductor fiber generates gesture well/gesture in local loading region and its nearby
It builds.
7. the method as claimed in claim 6 for regulating and controlling micro/nano level electric mechanical switch by local applied stress, it is characterised in that:
Under the action of given local stress: when the amplitude of applied voltage V is lower than first charge threshold level, produced by local stress
Gesture well/potential barrier the electric current of both direction will be prevented to pass through zinc oxide piezoelectric semiconductor nano fiber；When applied voltage amplitude is high
In first charge threshold level and be lower than voltage second critical value when, which only prevents the electric current in a direction from leading
Electric current that is logical and allowing another direction passes through zinc oxide piezoelectric semiconductor nano fiber；When applied voltage amplitude is higher than second
When charge threshold level, the electric current of both direction can pass through zinc oxide piezoelectric semiconductor nano fiber.
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| CN201910589098.1A CN110316693B (en) | 2019-07-02 | 2019-07-02 | Method for regulating micro-nano electromechanical switch through local external stress |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110676371A (en) * | 2019-10-14 | 2020-01-10 | 浙江大学 | Switch made of piezoelectric semiconductor material based on thermal effect |
| CN115036413A (en) * | 2022-06-09 | 2022-09-09 | 南京航空航天大学 | Composite structure for regulating and controlling homojunction potential barrier configuration and volt-ampere characteristic of piezoelectric semiconductor |
| CN116861597A (en) * | 2023-09-04 | 2023-10-10 | 西北工业大学宁波研究院 | Switch element design method based on piezoelectric semiconductor composite film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676371A (en) * | 2019-10-14 | 2020-01-10 | 浙江大学 | Switch made of piezoelectric semiconductor material based on thermal effect |
| CN115036413A (en) * | 2022-06-09 | 2022-09-09 | 南京航空航天大学 | Composite structure for regulating and controlling homojunction potential barrier configuration and volt-ampere characteristic of piezoelectric semiconductor |
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| CN116861597A (en) * | 2023-09-04 | 2023-10-10 | 西北工业大学宁波研究院 | Switch element design method based on piezoelectric semiconductor composite film |
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