CN105006520A - Tunneling pressure sensor - Google Patents
Tunneling pressure sensor Download PDFInfo
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- CN105006520A CN105006520A CN201510335552.2A CN201510335552A CN105006520A CN 105006520 A CN105006520 A CN 105006520A CN 201510335552 A CN201510335552 A CN 201510335552A CN 105006520 A CN105006520 A CN 105006520A
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Abstract
The invention relates to a tunneling pressure sensor. Each unit sensor of the tunneling pressure sensor uses a double-potential-barrier single-potential-well system. A potential well layer uses a well structure and is composed of hexagonal boron nitride at both ends and middle Be-ion-doped boron nitride. A first potential barrier layer and a second potential barrier layer are graphene thin film layers and are provided with metallic electrodes. A hexagonal boron nitride substrate grows on the top of a silicon oxide substrate. The first potential barrier layer and the second potential barrier layer grow on the top surface of the hexagonal boron nitride substrate. The bottom of the silicon oxide substrate is equipped with a silicon electrode. The unit sensors are arranged on the surface of the hexagonal boron nitride substrate in an N*N manner. Bias voltage Vb=0.3 to 0.5V is applied between the first potential barrier layer and the second potential barrier layer. Gate electrode Vg= 14 to 16V is applied between the second potential barrier layer and the silicon electrode. Compared with other types of pressure sensors, the tunneling pressure sensor is better in stability and has sensitivity a magnitude order higher than that of a silicon force-sensitive thin film sensor.
Description
Technical field
The present invention relates to a kind of tunnelling pressure sensor, belong to MEMS technology field, particularly a kind of tunnelling pressure sensor based on Graphene.
Background technology
Widely, existing MEMS pressure sensor generally adopts silicon thin film in the application of MEMS pressure sensor, because the physical property of silicon is limited, existing MEMS pressure sensor size is larger, sensitivity is limited, can only reach micro-meter scale, is difficult to be used widely at nm regime.This just awaits based on new principle, and the limit of micro electro mechanical device broken through by the device of new effect.
Because the physical restriction of conditional electronic material manifests gradually, researcher thirsts for finding some new materials to carry out fabricate devices, therefore seeks the nano material with particular characteristic and prepares electronic device and become focus.In the research process of nano material, the nano structural material of carbon receives much concern always.The new carbon of Graphene to be thickness be individual layer atom, has unique electronic structure and high mobility carrier properties.The valence band that graphite is rare and conduction band intersect at the drift angle place of hexagon Brillouin zone, to be energy gap be zero semiconductor, electronics near drift angle place and hole present linear dispersion relation, its equation of motion and the fermion that effective mass is zero the Dirac equation that meets similar.This phenomenon causes Graphene to occur, and the electrical properties that quantum hall effect, minimum electron conductivity, quantum Interference etc. are novel has important application prospect in microelectronics, surface treatment and catalysis etc.
Theory and applications in recent years for the tunneling effect of Graphene system is studied mainly in two fields: one is the ability and the stability thereof that improve tunnelling current; Two is physical processes of resonance tunnel-through.In order to solve the problem, the people such as Northcentral University Li Meng committee once adopted a kind of pressure sensor adopting unipotential to build two potential well system of the design of materials such as Graphene/hexagonal boron nitride.In the above-described techniques, adopt unipotential to build two potential well system as sensing unit structure, bias voltage V can only be applied in potential barrier
bto produce tunnel current, cannot reach the object effectively controlling barrier height and additional transmission coefficient, therefore, resonance tunneling effect is not obvious.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of MEMS tunnelling pressure sensor based on Graphene being conducive to improving stability and sensitivity.
For solving above technical problem, the technical solution used in the present invention is:
A kind of tunnelling pressure sensor, comprises cell sensor, silica substrate,
Cell sensor adopts double potential barrier unipotential trap system, and potential well layer is clipped in the middle of first barrier layer on top and the second barrier layer of bottom; Potential well layer adopts well structure, is made up of with the Be ion doping boron nitride be clipped in the middle the hexagonal boron nitride at two ends; First barrier layer and the second barrier layer are graphene film layer and are respectively equipped with metal electrode; Silica base top is long hexagonal boron nitride substrate, and the first barrier layer and the second barrier layer length, in hexagonal boron nitride substrate top surface, establish silicon electrode bottom silica substrate;
Cell sensor is arranged in hexagonal boron nitride substrate surface in the mode of N × N;
Bias voltage V is applied between the first barrier layer and the second barrier layer
b=0.3-0.5V, applies grid voltage V between second layer potential barrier and silicon electrode
g=14-16V.
The linear dispersion relation of Graphene near dirac point makes it have zero band gap, and requires to open band gap using Graphene as the nano-device of functional material.Common solution has: change quantum size, chemical regulation, structure sandwich construction and add external electric field, the rare double-layer nanostructured quantum size of regulation and control graphite etc.Because boron nitride and Graphene have the lattice constant matched, the present invention regulates and controls the electronic structure of Graphene by building Graphene/boron nitride heterostructure, reach the object opening band gap.Have strong Charger transfer between heterogeneous double-decker, the band gap of double layer heterojunction structure and the effective mass of charge carrier can be regulated and controled by modification layer spacing and heap behaviour mode.This heterogeneous double-decker is that the characteristic electron that regulation and control graphite is rare provides a kind of effective ways.
Based on above analysis, the operation principle of pressure sensor of the present invention is: under pressure, stress distribution in graphene nano band structure and Changing Pattern change, internal electric field makes quantum level in graphene nano band structure change, quantum level changes thus causes resonant tunnel current to change, by measuring the change of resonant tunnel current signal, just a pressure mechanical signal indirectly can be obtained.
Potential well layer adopts sub-well structure, is beneficial to improve current peak-to-valley ratio, the metal electrode on the first barrier layer and the second barrier layer, provides tunelling electrons for there is tunneling effect.In order to improve tunnelling current and stability thereof, the present invention applies bias voltage V between the first barrier layer and the second barrier layer
b=0.3-0.5V, to produce stable tunnel current.Grid voltage V is applied between silicon electrode bottom second layer potential barrier and silica substrate
g=14-16V, to adjust the neat dirac point of two layers of potential barrier, thus reaches the object effectively controlling barrier height and additional transmission coefficient.By measuring the change of resonant tunnel current signal, just pressure measxurement can be realized.
As preferred scheme, the height of the first barrier layer and the second barrier layer is all set as V
1=285meV.
As preferred scheme, the cylinder of effective contact portion of the first barrier layer and potential well layer to be cross section be semicircle, radius is set as D
1=80nm; Effective contact portion of the second barrier layer and potential well layer is cylinder, and radius is set as D
2=120nm.
As preferred scheme, the gross thickness of potential well layer is set as 12 atomic layers thick, and radius is set as d=120nm, and in potential well layer, the thickness of three straton well structures is uniformly distributed.
Compared to the pressure sensor of other types, the range of the tunnelling pressure sensor designed by the present invention is comparatively large, and maximum detected pressures can reach 1GPa, 1 ~ 2 order of magnitude large compared to the conventional pressure sensor of other types.Tunnelling pressure sensor designed by the present invention can also by the adjustment regulating bias voltage to realize sensitivity, large 1 order of magnitude is wanted compared to the sensitivity of other silicon power sensitive film transducers, highly sensitive sensing unit not only can reduce the gain of modulate circuit, but also can improve the signal to noise ratio of measuring system.
Accompanying drawing explanation
Fig. 1 is the stereogram of cell sensor of the present invention;
Fig. 2 is the stereogram of array of pressure sensors of the present invention;
Fig. 3 is the tunnelling current measuring principle figure of pressure sensor of the present invention.
In figure, 1-silicon electrode, the substrate of 2-silica, 3-hexagonal boron nitride substrate, 4-is located at the metal electrode on the first barrier layer, 5-first barrier layer, the hexagonal boron nitride on 6-top, 7-Be ion doping boron nitride, the hexagonal boron nitride of 8-bottom, 9-is located at the metal electrode on the second barrier layer, 10-second barrier layer.
Embodiment-
The MEMS tunnelling pressure sensor based on Graphene shown in Fig. 1, comprises cell sensor, silica substrate 2.Wherein, cell sensor adopts double potential barrier unipotential trap system, and potential well layer is clipped in the middle of first barrier layer 5 on top and the second barrier layer 10 of bottom.First barrier layer 5 and the second barrier layer 10 are graphene film layer and are respectively equipped with metal electrode, the metal electrode 9 be namely located at the metal electrode 4 on the first barrier layer and be located on the second barrier layer.Potential well layer adopts well structure, is made up of with the Be ion doping boron nitride 7 be clipped in the middle of their hexagonal boron nitride 6 on top and the hexagonal boron nitride 8 of bottom.
The height of the first barrier layer 4 is set as V
1=285meV, the cylinder of the first barrier layer 4 and effective contact portion of potential well layer to be cross section be semicircle, radius is set as D
1=80nm.The height of the second barrier layer 10 is set as V
1=285meV, the second barrier layer 10 is cylinder with effective contact portion of potential well layer, and radius is set as D
2=120nm.The gross thickness of potential well layer is set as 12 atomic layers thick, and radius is set as d=120nm, and in potential well layer, the thickness of three straton well structures is uniformly distributed, setting h
vbe 4 atomic layers thick.
Silica substrate 2 top is long has hexagonal boron nitride substrate 3, first barrier layer 4 and the second barrier layer 10 length at hexagonal boron nitride substrate 3 upper surface, establishes silicon electrode 1 bottom silica substrate 2.
As shown in Figure 2, cell sensor with the mode of N × N be arranged in hexagonal boron nitride substrate 3 surface, N be greater than 1 natural number, decomposition pressure sensor array.
As shown in Figure 3, between the first barrier layer 4 and the second barrier layer 10, bias voltage V is applied
b=0.3-0.5V, applies grid voltage V between second layer potential barrier 10 and silicon electrode 1
g=14-16V.
Claims (4)
1. a tunnelling pressure sensor, comprises cell sensor, silica substrate (2), it is characterized in that:
Cell sensor adopts double potential barrier unipotential trap system, and potential well layer is clipped in the middle of first barrier layer (5) on top and second barrier layer (10) of bottom; Potential well layer adopts well structure, is made up of the hexagonal boron nitride (6,8) at two ends and the Be ion doping boron nitride (7) that is clipped in the middle; First barrier layer (5) and the second barrier layer (10) are for graphene film layer and be respectively equipped with metal electrode (4,9);
Silica substrate (2) top is long hexagonal boron nitride substrate (3), and the first barrier layer (4) and the second barrier layer (10) length are at hexagonal boron nitride substrate (3) upper surface, and silicon electrode (1) is established in silica substrate (2) bottom;
Cell sensor is arranged in hexagonal boron nitride substrate (3) surface in the mode of N × N;
Bias voltage V is applied between the first barrier layer (4) and the second barrier layer (10)
b=0.3-0.5V, applies grid voltage V between second layer potential barrier (10) and silicon electrode (1)
g=14-16V.
2. tunnelling pressure sensor according to claim 1, is characterized in that: the height of the first barrier layer (4) and the second barrier layer (10) is all set as V
1=285meV.
3. tunnelling pressure sensor according to claim 2, is characterized in that: the cylinder of effective contact portion of the first barrier layer (4) and potential well layer to be cross section be semicircle, radius is set as D
1=80nm; Second barrier layer (10) is cylinder with effective contact portion of potential well layer, and radius is set as D
2=120nm.
4. tunnelling pressure sensor according to claim 3, is characterized in that: the gross thickness of potential well layer is set as 12 atomic layers thick, and radius is set as d=120nm, and in potential well layer, the thickness of three straton well structures is uniformly distributed.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
| CN107941385A (en) * | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN112129434A (en) * | 2019-06-25 | 2020-12-25 | 海宁先进半导体与智能技术研究院 | Electronic skin design for detecting pressure size and position by adopting two-dimensional material heterostructure |
| CN115683440A (en) * | 2022-11-18 | 2023-02-03 | 哈尔滨工业大学 | High-resolution graphene heterojunction air pressure sensor |
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| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN104155051A (en) * | 2014-08-21 | 2014-11-19 | 中北大学 | Wide range graphene high temperature pressure sensor |
| CN104409498A (en) * | 2014-12-10 | 2015-03-11 | 上海电机学院 | Graphene differential negative resistance transistor |
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2015
- 2015-06-17 CN CN201510335552.2A patent/CN105006520B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN103199106A (en) * | 2011-12-23 | 2013-07-10 | Ihp有限责任公司/莱布尼茨创新微电子研究所 | P-type graphene base transistor |
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| CN104155051A (en) * | 2014-08-21 | 2014-11-19 | 中北大学 | Wide range graphene high temperature pressure sensor |
| CN104409498A (en) * | 2014-12-10 | 2015-03-11 | 上海电机学院 | Graphene differential negative resistance transistor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
| CN107941385A (en) * | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN107359235B (en) * | 2017-08-14 | 2023-10-03 | 中北大学 | Graphene pressure sensor |
| CN107941385B (en) * | 2017-08-14 | 2023-12-08 | 中北大学 | Pressure sensor based on graphene piezoresistance junction |
| CN112129434A (en) * | 2019-06-25 | 2020-12-25 | 海宁先进半导体与智能技术研究院 | Electronic skin design for detecting pressure size and position by adopting two-dimensional material heterostructure |
| CN115683440A (en) * | 2022-11-18 | 2023-02-03 | 哈尔滨工业大学 | High-resolution graphene heterojunction air pressure sensor |
| CN115683440B (en) * | 2022-11-18 | 2023-11-03 | 哈尔滨工业大学 | High-resolution graphene heterojunction air pressure sensor |
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