CN110311684B - Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope - Google Patents
Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope Download PDFInfo
- Publication number
- CN110311684B CN110311684B CN201910619492.5A CN201910619492A CN110311684B CN 110311684 B CN110311684 B CN 110311684B CN 201910619492 A CN201910619492 A CN 201910619492A CN 110311684 B CN110311684 B CN 110311684B
- Authority
- CN
- China
- Prior art keywords
- module
- nmos tube
- resistor
- mos
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 238000007493 shaping process Methods 0.000 claims abstract description 7
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000008859 change Effects 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/30—Delta-sigma modulation
- H03M3/322—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M3/324—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/30—Delta-sigma modulation
- H03M3/39—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators
- H03M3/436—Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators characterised by the order of the loop filter, e.g. error feedback type
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
Abstract
The invention relates to an automatic tuning band-pass sigma-delta interface circuit based on a micro-electromechanical gyroscope, which comprises a C/V conversion module, a loop filtering module, an observer, a quantizer and a DAC feedback module, wherein the C/V conversion module is connected with the loop filtering module; the output end of the loop filter module is connected with the input end of the DAC feedback module through the quantizer, and the output end of the DAC feedback module is connected with the input end of the loop filter module to form a closed loop structure so as to form a Sigma-delta modulator; the existing detection module converts the detected capacitance signal into a proportional voltage signal through the C/V conversion module, and the voltage signal and a feedback analog signal output by the DAC feedback module are input into the Sigma-delta modulator after logical operation, so that noise shaping and quantitative output are realized; the observer generates control voltage to act on the loop filter module, and automatic tuning is achieved. The invention can adjust the central frequency point in real time, track the resonance frequency change of the MEMS gyroscope, obviously improve the environmental adaptability of the MEMS gyroscope and improve the overall precision.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to an automatic tuning band-pass Sigma-delta interface circuit for a micro-electromechanical system (MEMS) gyroscope in the field of inertial sensors.
Background
Compared with the conventional inertial sensor, the MEMS inertial sensor has the advantages of small volume, light weight, low power consumption, mass production and the like. In recent years, the MEMS inertial sensor has been developed rapidly, and its performance in terms of measurement accuracy and stability has been improved, and it has been widely used in military and civil fields, such as missile, car navigation, and smart mobile devices. Meanwhile, the interface circuit design of the high-performance MEMS inertial sensor is also developed towards the directions of high precision, low power consumption and small area.
Due to the fact that the MEMS technology has deviation during processing, different elements in the same batch are not completely consistent, and the resonance frequency has deviation; meanwhile, the resonance frequency of the MEMS gyroscope can be changed under the influence of external environment, temperature and the like. In addition, the circuit adopting the continuous time technology has low power consumption and small phase error, can not introduce folding noise, but can be influenced by factors such as uncertainty of ASIC processing error, temperature and the like, so that the noise shaping central frequency point of the Sigma-Delta modulator has deviation. All of the above factors reduce the overall accuracy of the MEMS gyroscope.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide an automatic tuning bandpass Sigma-delta interface circuit based on a micro-electromechanical gyroscope, which can overcome the problem that the noise shaping frequency point of a continuous-time bandpass Sigma-delta ADC is affected by temperature and processing errors, improve the signal-to-noise ratio in different environments, and improve the overall accuracy of the gyroscope.
In order to achieve the purpose, the invention adopts the following technical scheme: an automatic tuning band-pass sigma-delta interface circuit based on a micro-electromechanical gyroscope is characterized in that: the system comprises a C/V conversion module, a loop filtering module, an observer, a quantizer and a DAC feedback module; the output end of the loop filter module is connected with the input end of the DAC feedback module through the quantizer, and the output end of the DAC feedback module is connected with the input end of the loop filter module to form a closed loop structure so as to form a Sigma-delta modulator; the existing detection module converts the detected capacitance signal into a proportional voltage signal through the C/V conversion module, and the voltage signal and a feedback analog signal output by the DAC feedback module are input into the Sigma-delta modulator after logical operation, so that noise shaping and quantitative output are realized; the observer generates control voltage to act on the loop filter module, and automatic tuning is achieved.
Further, the C/V conversion module comprises an OTA operational amplifier, a feedback capacitor, a feedback resistor and a switch demodulation module; the capacitance signal is input into the OTA operational amplifier, the feedback capacitor and the feedback resistor are connected in parallel between the positive end and the output end of the OTA operational amplifier, and the output end of the OTA operational amplifier is connected with the loop filter module in the Sigma-delta modulator through the switch demodulation module.
Further, the circuit comprises a first MOS adjustable resistor, a first operational amplifier, a second MOS adjustable resistor, a second operational amplifier, a first capacitor and a second capacitor; the output of the C/V conversion module is connected with one end of the first MOS adjustable resistor, the other end of the first MOS adjustable resistor is connected with the forward end of the first operational amplifier, the output end of the first operational amplifier is connected with the forward end of the second operational amplifier through the second MOS adjustable resistor, and the output end of the second operational amplifier is connected with the quantizer; the first capacitor is connected in parallel between the positive end and the output end of the first operational amplifier, and the second capacitor is connected in parallel between the positive end and the output end of the second operational amplifier; the resistance value of the MOS adjustable resistor is determined by the control voltage output by the observer.
Furthermore, the loop filter module adopts a second-order MOS-C filter structure, the MOS adjustable resistor adopts a fully differential MOS resistor, and the time constant is determined by the fully differential MOS resistor and the capacitor.
Further, the fully differential MOS resistor is composed of four NMOS transistors operating in a linear region, where the sources of the NMOS transistor M1 and the NMOS transistor M4 are shorted, the drains of the NMOS transistor M1 and the NMOS transistor M3 are shorted, the sources of the NMOS transistor M2 and the NMOS transistor M3 are shorted, the drains of the NMOS transistor M2 and the NMOS transistor M4 are shorted, the gates of the NMOS transistor M1 and the NMOS transistor M2 are connected to the control voltage provided by the observer, the gates of the NMOS transistor M3 and the NMOS transistor M4 are connected to the control voltage provided by an external voltage source, the sources of the NMOS transistor M1 and the NMOS transistor M2 are input ends of a fully differential resistor, and the drains of the NMOS transistor M3 and the NMOS transistor M4 are output ends of the fully differential resistor.
Further, the observer comprises a filter, two comparators, an exclusive-or gate and an integrator; the observer is provided with two paths of input signals, the first path of input signal is provided by an output signal of the C/V conversion module, the amplitude and the frequency of the first path of input signal are the same as those of a signal input to the Sigma-delta modulator, and the first path of input signal sequentially passes through the filter and the comparator; the second path of input signal is provided by the existing external signal generator, is a standard signal, has the same frequency as the first path of input signal, and directly passes through the other comparator; signals output by the two comparators are sequentially input into the exclusive-or gate and the integrator to form control voltage, and the control voltage acts on the MOS adjustable resistor in the loop filter module to control the resistance value of the resistor.
Furthermore, the quantizer adopts an N-bit Flash ADC structure.
Further, the DAC feedback module comprises 2NA resistor and 2NAnd the switch N is the bit number of the quantizer and feeds back a digital signal to the input end of the Sigma-delta modulator.
Due to the adoption of the technical scheme, the invention has the following advantages: 1. the invention is based on a continuous time band-pass Sigma-delta modulator, adopts a closed loop structure, and is more suitable for high-precision digital quantization processing of gyro narrowband signals. 2. The invention adopts the observer with a structure similar to a loop filter to generate a voltage control signal, can automatically adjust the central frequency point of the Sigma-Delta modulator, tracks the resonant frequency of the MEMS gyroscope in real time, improves the signal-to-noise ratio and obviously improves the environmental adaptability of the MEMS gyroscope.
Drawings
FIG. 1 is a block diagram of the overall architecture system of the present invention;
FIG. 2 is a schematic diagram of an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of the C/V conversion module of the present invention;
FIG. 4 is a block diagram of a second order MOS-C filter of the present invention;
FIG. 5 is a schematic diagram of the MOS tunable resistor of the present invention;
FIG. 6a is a graph of the output code stream spectrum of a quantizer at a temperature of 25 ℃;
fig. 6b is a graph of the output code stream spectrum of the quantizer at a temperature of 60 c.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
Aiming at the characteristic that an output signal of an MEMS gyroscope is a narrow-band resonant frequency, as shown in fig. 1 and fig. 2, the invention provides an automatic tuning band-pass sigma-delta interface circuit based on a micro-electromechanical gyroscope, which is used for converting and digitally outputting tiny capacitance change of the gyroscope and comprises a C/V conversion module 1, a loop filtering module 2, an observer 3, a quantizer 4 and a DAC feedback module 5; the output end of the loop filter module 2 is connected with the input end of the DAC feedback module 5 through the quantizer 4, and the output end of the DAC feedback module 5 is connected with the input end of the loop filter module 2 to form a closed loop structure, so that the Sigma-delta modulator is formed. The existing detection module converts the detected capacitance signal into a proportional voltage signal through the C/V conversion module 1, and the voltage signal and a feedback analog signal output by the DAC feedback module 5 are input into a Sigma-delta modulator after logical operation, so that the functions of noise shaping and quantization output are realized. The observer 3 generates control voltage to act on a loop filter module 2 in the Sigma-delta modulator, so that the automatic tuning function is realized, and the frequency of the MEMS gyroscope is tracked in real time.
In the above embodiment, as shown in fig. 3, the C/V conversion module 1 includes an OTA operational amplifier, a feedback capacitor Cf, a feedback resistor Rf, and a switch demodulation module. The capacitor signal is input into an OTA operational amplifier, a feedback capacitor Cf and a feedback resistor Rf are connected in parallel between the positive end and the output end of the OTA operational amplifier, and the output end of the OTA operational amplifier is connected with a loop filter module 2 in the Sigma-delta modulator through a switch demodulation module. The switch demodulation module adopts a high-frequency carrier switch demodulation technology and outputs a voltage signal proportional to input.
In the above embodiments, as shown in fig. 4, the loop filter module 2 includes a first MOS adjustable resistor, a first operational amplifier OP1, a second MOS adjustable resistor, a second operational amplifier OP2, a first capacitor C1, and a second capacitor C2. The output of the C/V conversion module 1 is connected to one end of a first MOS adjustable resistor, the other end of the first MOS adjustable resistor is connected to the forward end of a first operational amplifier OP1, the output end of the first operational amplifier OP1 is connected to the forward end of a second operational amplifier OP2 through a second MOS adjustable resistor, and the output end of the second operational amplifier OP2 is connected to the quantizer 4. Wherein, a first capacitor C1 is connected in parallel between the positive terminal and the output terminal of the first operational amplifier OP1, and a second capacitor C2 is connected in parallel between the positive terminal and the output terminal of the second operational amplifier OP 2. In this embodiment, the MOS adjustable resistor is a fully differential MOS resistor, and the time constant of the loop filter module 2 is determined by the fully differential MOS resistor and the capacitor. The resistance value of the MOS adjustable resistor is determined by the control voltage output by the observer 3, so that the change of the loop filter time constant influences the center frequency point of the noise shaping of the Sigma-delta modulator.
In a preferred embodiment, the loop filter module 2 adopts a second-order MOS-C filter structure, and the time constant is determined by a fully differential MOS resistor and a capacitor. The resistance of the voltage-controlled fully differential MOS resistor is determined by the control voltages V1 and V2, as shown in fig. 5. The control voltage V1 is supplied by the observer 3, and the control voltage V2 is a constant voltage and is supplied by an external voltage source. The fully differential MOS resistor is composed of four NMOS tubes working in a linear region, wherein the source electrodes of the NMOS tube M1 and the NMOS tube M4 are in short circuit, the drain electrodes of the NMOS tube M1 and the NMOS tube M3 are in short circuit, the source electrodes of the NMOS tube M2 and the NMOS tube M3 are in short circuit, the drain electrodes of the NMOS tube M2 and the NMOS tube M4 are in short circuit, the grid electrodes of the NMOS tube M1 and the NMOS tube M2 are connected with a control voltage V1, the grid electrodes of the NMOS tube M3 and the NMOS tube M4 are connected with a control voltage V2, the source electrodes of the NMOS tube M1 and the NMOS tube M2 are input ends of the fully differential resistor, and the drain electrodes of the NMOS tube M3 and the NMOS tube M4 are output. The output voltage V1 of the observer 3 changes with temperature, process deviation, etc., so as to change the resistance of the fully differential MOS resistor, i.e., change the time constant of the filter, and further change the noise shaping center frequency point of the Sigma-delta modulator.
In the above embodiments, as shown in fig. 2, the observer 3 and the loop filter module 2 have the same structure and parameters, and when the same signal passes through the observer 3 and the Sigma-delta modulator, the influence of process errors or temperature is the same. The observer 3 comprises a filter h(s), two comparators, an exclusive or gate and an integrator. The observer 3 has two input signals, the first input signal AC1 is provided by the output signal of the C/V conversion module 1, the amplitude and frequency of the signal are the same as those of the signal input to the Sigma-delta modulator, and the input signal passes through the filter h(s) and the first comparator in sequence; the second input signal AC2 is provided by the existing external signal generator, is a standard signal, has the same frequency as the first input signal AC1, and directly passes through the second comparator. The signals output by the two comparators are sequentially input into the exclusive-or gate and the integrator to form a control voltage V1, which acts on the MOS adjustable resistor in the loop filter module 2 to control the resistance of the resistor so as to change the time constant of the filter.
In the above embodiments, the quantizer 4 adopts an N-bit Flash ADC structure to perform parallel processing on the signals, and performs digital output.
In the above embodiments, the DAC feedback module 5 comprises 2NA resistor and 2NAnd a switch, wherein N is the number of bits of the quantizer 4, and the digital signal is fed back to the input end of the Sigma-delta modulator.
In the above embodiments, each module is powered by a single power supply, the power supply is VDD, and differential measurement is realized by using a reference voltage Vref. In this embodiment, Vref is VDD/2.
In summary, when the invention is used, the adjustment of the noise center frequency point can be realized at different temperatures, as shown in fig. 6a and 6b, the code stream spectrograms output by the quantizer at different temperatures are shown, and after signals pass through the Sigma-delta modulator at the temperatures of 25 ℃ and 60 ℃, the positions of the resonance frequencies can be all near the lowest noise floor.
The above embodiments are only for illustrating the present invention, and the structure, size, arrangement position and shape of each component can be changed, and on the basis of the technical scheme of the present invention, the improvement and equivalent transformation of the individual components according to the principle of the present invention should not be excluded from the protection scope of the present invention.
Claims (7)
1. An automatic tuning band-pass sigma-delta interface circuit based on a micro-electromechanical gyroscope is characterized in that: the system comprises a C/V conversion module, a loop filtering module, an observer, a quantizer and a DAC feedback module; the output end of the loop filter module is connected with the input end of the DAC feedback module through the quantizer, and the output end of the DAC feedback module is connected with the input end of the loop filter module to form a closed loop structure so as to form a Sigma-delta modulator; the existing detection module converts the detected capacitance signal into a proportional voltage signal through the C/V conversion module, and the voltage signal and a feedback analog signal output by the DAC feedback module are input into the Sigma-delta modulator after logical operation, so that noise shaping and quantitative output are realized; the observer generates control voltage to act on the loop filter module to realize automatic tuning;
the loop filter module comprises a first MOS adjustable resistor, a first operational amplifier, a second MOS adjustable resistor, a second operational amplifier, a first capacitor and a second capacitor; the output of the C/V conversion module is connected with one end of the first MOS adjustable resistor, the other end of the first MOS adjustable resistor is connected with the forward end of the first operational amplifier, the output end of the first operational amplifier is connected with the forward end of the second operational amplifier through the second MOS adjustable resistor, and the output end of the second operational amplifier is connected with the quantizer; the first capacitor is connected in parallel between the positive end and the output end of the first operational amplifier, and the second capacitor is connected in parallel between the positive end and the output end of the second operational amplifier; the resistance value of the MOS adjustable resistor is determined by the control voltage output by the observer.
2. The interface circuit of claim 1, wherein: the C/V conversion module comprises an OTA operational amplifier, a feedback capacitor, a feedback resistor and a switch demodulation module; the capacitance signal is input into the OTA operational amplifier, the feedback capacitor and the feedback resistor are connected in parallel between the positive end and the output end of the OTA operational amplifier, and the output end of the OTA operational amplifier is connected with the loop filter module in the Sigma-delta modulator through the switch demodulation module.
3. The interface circuit of claim 1, wherein: the loop filtering module adopts a second-order MOS-C filter structure, the MOS adjustable resistor adopts a fully differential MOS resistor, and a time constant is determined by the fully differential MOS resistor and a capacitor.
4. The interface circuit of claim 3, wherein: the fully differential MOS resistor is composed of four NMOS tubes working in a linear region, wherein the sources of the NMOS tube M1 and the NMOS tube M4 are in short circuit, the drains of the NMOS tube M1 and the NMOS tube M3 are in short circuit, the sources of the NMOS tube M2 and the NMOS tube M3 are in short circuit, the drains of the NMOS tube M2 and the NMOS tube M4 are in short circuit, the gates of the NMOS tube M1 and the NMOS tube M2 are connected to control voltage provided by the observer, the gates of the NMOS tube M3 and the NMOS tube M4 are connected to control voltage provided by an external voltage source, the sources of the NMOS tube M1 and the NMOS tube M2 are input ends of a fully differential resistor, and the drains of the NMOS tube M3 and the NMOS tube M4 are output ends of the fully differential resistor.
5. The interface circuit of claim 1, wherein: the observer comprises a filter, two comparators, an exclusive-or gate and an integrator; the observer is provided with two paths of input signals, the first path of input signal is provided by an output signal of the C/V conversion module, the amplitude and the frequency of the first path of input signal are the same as those of a signal input to the Sigma-delta modulator, and the first path of input signal sequentially passes through the filter and the comparator; the second path of input signal is provided by the existing external signal generator, is a standard signal, has the same frequency as the first path of input signal, and directly passes through the other comparator; signals output by the two comparators are sequentially input into the exclusive-or gate and the integrator to form control voltage, and the control voltage acts on the MOS adjustable resistor in the loop filter module to control the resistance value of the resistor.
6. The interface circuit of any of claims 1 to 5, wherein: the quantizer adopts an N bit Flash ADC structure.
7. The interface circuit of any of claims 1 to 5, wherein: the DAC feedback module comprises 2NA resistor and 2NAnd the switch N is the bit number of the quantizer and feeds back a digital signal to the input end of the Sigma-delta modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910619492.5A CN110311684B (en) | 2019-07-10 | 2019-07-10 | Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910619492.5A CN110311684B (en) | 2019-07-10 | 2019-07-10 | Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110311684A CN110311684A (en) | 2019-10-08 |
| CN110311684B true CN110311684B (en) | 2020-11-27 |
Family
ID=68080681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910619492.5A Active CN110311684B (en) | 2019-07-10 | 2019-07-10 | Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110311684B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130341B (en) * | 2020-01-15 | 2020-12-01 | 清华大学 | Digital closed-loop control charge pump based on MEMS (micro-electromechanical system) capacitor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388671A (en) * | 2007-09-04 | 2009-03-18 | 英飞凌科技股份公司 | Tuning methods for loop-filters of continuous-time sigma-delta modulators |
| CN106017449A (en) * | 2016-05-31 | 2016-10-12 | 东南大学 | System for improving zero bias performance of normal pressure packaged silicon micro-gyroscope |
| CN106323263A (en) * | 2016-08-24 | 2017-01-11 | 南京理工大学 | Bandpass sigma-delta closed-loop detection circuit of silicon micro gyroscope |
| CN106899303A (en) * | 2015-12-18 | 2017-06-27 | 亚德诺半导体集团 | Flash memory ADC calibration |
| US9762259B1 (en) * | 2017-01-09 | 2017-09-12 | Texas Instruments Incorporated | Sigma-delta analog-to-digital converter with auto tunable loop filter |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8462030B2 (en) * | 2004-04-27 | 2013-06-11 | Texas Instruments Incorporated | Programmable loop filter for use with a sigma delta analog-to-digital converter and method of programming the same |
| US7443257B2 (en) * | 2005-04-26 | 2008-10-28 | Honeywell International Inc. | Mechanical oscillator control electronics |
| US20140167995A1 (en) * | 2011-04-11 | 2014-06-19 | Agency For Science, Technology And Research | Analog-to-digital converter |
| US9506757B2 (en) * | 2013-03-14 | 2016-11-29 | Invensense, Inc. | Duty-cycled gyroscope |
| US9537493B2 (en) * | 2014-05-21 | 2017-01-03 | Robert Bosch Gmbh | Phase lock loop circuit having a wide bandwidth |
| CN105758402B (en) * | 2016-03-31 | 2019-03-15 | 苏州大学 | A kind of closed loop detection system of silicon micro-gyroscope |
-
2019
- 2019-07-10 CN CN201910619492.5A patent/CN110311684B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388671A (en) * | 2007-09-04 | 2009-03-18 | 英飞凌科技股份公司 | Tuning methods for loop-filters of continuous-time sigma-delta modulators |
| CN106899303A (en) * | 2015-12-18 | 2017-06-27 | 亚德诺半导体集团 | Flash memory ADC calibration |
| CN106017449A (en) * | 2016-05-31 | 2016-10-12 | 东南大学 | System for improving zero bias performance of normal pressure packaged silicon micro-gyroscope |
| CN106323263A (en) * | 2016-08-24 | 2017-01-11 | 南京理工大学 | Bandpass sigma-delta closed-loop detection circuit of silicon micro gyroscope |
| US9762259B1 (en) * | 2017-01-09 | 2017-09-12 | Texas Instruments Incorporated | Sigma-delta analog-to-digital converter with auto tunable loop filter |
Non-Patent Citations (1)
| Title |
|---|
| 电容式微机械陀螺仪读出电路研究与设计;张云福;《中国优秀硕士学位论文全文数据库 信息科技辑》;20160315(第3期);第I136-2701页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110311684A (en) | 2019-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7358801B2 (en) | Reducing noise and/or power consumption in a switched capacitor amplifier sampling a reference voltage | |
| US20110279175A1 (en) | System and method for rc calibration using phase and frequency | |
| GB2501010A (en) | A sigma-delta analogue-to-digital converter with a wide linear input range | |
| US9804190B2 (en) | Apparatus and method for calibration of capacitance mismatch and temperature variations in a MEMS device | |
| US8643518B2 (en) | Calibration of time constants in a continuous-time delta-sigma converter | |
| CN110311684B (en) | Automatic tuning band-pass sigma-delta interface circuit based on micro-electromechanical gyroscope | |
| Sanjurjo et al. | An energy-efficient 17-bit noise-shaping Dual-Slope Capacitance-to-Digital Converter for MEMS sensors | |
| Valero et al. | CMOS voltage-to-frequency converter with temperature drift compensation | |
| EP2974008B1 (en) | Buffer amplifier circuit | |
| Kim et al. | A fully-digital beat-frequency based ADC achieving 39dB SNDR for a 1.6 mV pp input signal | |
| US10833698B1 (en) | Low-power high-precision sensing circuit | |
| US10461765B2 (en) | Successive approximation type AD converter and sensor device | |
| CN112653471B (en) | Digital second-order integral modulator for capacitance detection | |
| Saukoski et al. | Integrated readout and control electronics for a microelectromechanical angular velocity sensor | |
| CN109168116A (en) | A kind of angular speed closed-loop policy improving MEMS gyro static state and linearity index | |
| US8836416B2 (en) | Tuning circuitry and method for active filters | |
| Bestetti et al. | Low-power frequency-to-digital-converter for a 6-axis MEMS frequency-modulated inertial measurement unit | |
| Chiu et al. | Active thermal compensation of MEMS based gyroscope | |
| US10267896B1 (en) | Variable bandwidth filter | |
| US20130301753A1 (en) | Circuit device and electronic apparatus | |
| Sharma | CMOS systems and circuits for sub-degree per hour MEMS gyroscopes | |
| CN112327991A (en) | Current source circuit and signal conversion chip | |
| CN113126687A (en) | Bandgap reference voltage generating circuit | |
| EP4009520B1 (en) | Time constant calibration circuit and method | |
| CN118413277B (en) | Receiver signal strength indicating circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |