CN1103112A - Apparatus for forming thin film - Google Patents
Apparatus for forming thin film Download PDFInfo
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- CN1103112A CN1103112A CN 93115070 CN93115070A CN1103112A CN 1103112 A CN1103112 A CN 1103112A CN 93115070 CN93115070 CN 93115070 CN 93115070 A CN93115070 A CN 93115070A CN 1103112 A CN1103112 A CN 1103112A
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Abstract
A kind of film forming device consists of vapour generating source, ionizing device to ionize the aggregation in the vapour, accelerator to accelerate the ionized aggregation toward the base plate. The cathode for emitting electron used in ionization of the iorizing device is located in proper position to make emitted electrons can directly knock on the aggregations in vapour, thus the ionizing efficiency of the aggregation is raised and the fact that the ionizing device life is shortened due to corrosion of vapour coating matter directly contaminating said device is avoided, so the steadily and efficiently film forming is ensured.
Description
The present invention relates to film forming film forming device on substrate, particularly form the film forming device of high-quality thin film with assembly thing ionic fluid vapour deposition method (ICB method).
In the past, form the film of high quality such as semiconductor film, optical thin film, magnetic film, insulating film with the ICB method always.
Fig. 1 is a sectional view, shows the conventional thin membrane formation device shown in 1979 No. 9592 communique of for example Japanese patent of invention bulletin model utility.Among the figure:
The 1st, make evaporation material 2 vaporific steams that the source take place, the 3rd, accommodate the crucible of evaporation material 2,4 are provided in a side of the nozzle on crucible 3 tops, the heater strip that 5 is provided in a side of around the crucible, uses as the heating unit of heating crucible, and the 6th, shielding is from the 1st heat-insulating shield of the heat of heater strip 5.Above-mentioned crucible 3, heater strip 5 and the 1st heat-insulating shield 6 constitute steam source 1 take place;
The 7th, the assembly thing (block atomic group) that the steam of the evaporation material 2 that sprays by making progress from nozzle 4 produces.8 are provided in a side of the top that source 1 takes place steam, make and assemble thing 7 Ionized ionization devices, the ionizing wire 9 that it is used by ejected electron, draw electronics, make its grid shape electronics extraction electrode 10 that quickens towards structure set 7 from ionizing wire 9, and be used for shielding from the 2nd heat-insulating shield 11 of the heat of ionizing wire 9 and form;
The 12nd, be ionized device 8 Ionized ionizations and assemble thing, 13 are provided in a side of the top of ionization device 8, the booster machinery that ionization assembly thing is quickened the substrate of introducing 16 towards the back, it is made up of accelerating electrode 14 and ground-electrode 15, ground-electrode 15 is a zero potential, and ground electrode 15 is positive potential and accelerating electrode 14 connects;
16 are provided in a side of the substrate of booster machinery 13 tops, are zero potential.The 17th, inside keeps vacuum and accommodates above-mentioned 1 to 16 vacuum tank, and the 18th, vacuum tank 17 is carried out exhaust make it be the pumped vacuum systems of vacuum state.
Its principle of work below is described.At first, making vacuum tank 17 interior vacuum tightnesss by pumped vacuum systems 18 is 10
-6Torr.Applying voltage makes the relative heater strip 5 of current potential of crucible 3 be positively biased.To heater strip 5 energising heating, its electronics of emitting is owing to electric field is drawn towards crucible 3 and collision with it, and heating crucible makes the vapour pressure in the crucible 3 reach several torrs.
Since this heating, evaporation material 2 evaporations in the crucible 3, and this steam is from upwards ejection of nozzle 4.This steam is when the nozzle 4, because that adiabatic expansion is quickened to cool off is condensing, forms assembly thing 7.
In ionization device 8, the relative ionizing wire 9 of the current potential of electronics extraction electrode 10 is positively biased.To ionizing wire energising heating, its electronics of emitting is drawn by electronics extraction electrode 10, wherein a part of electronics is caught by electronics extraction electrode 10, but another part flies to by the gap of grid, with 7 collisions of assembly thing, get electronics with its energy, make it become ionization and assemble thing 12 with positive charge.
At booster machinery 13 places, be subjected to the effect of electric field of accelerating electrode 14 and 15 formation of ground-electrode, it is that substrate 16 quickens towards the top that thing 12 is assembled in ionization, assembles thing 7 and substrate 16 collisions with not ionizable neutral, forms the film (not shown) of evaporation material 2 on its surface.
There is following problems in traditional film forming device of tool said structure:
At first, because in the electronics of emitting from ionizing wire 9, it is Ionized to help to assemble thing, it only is that part of electronics by the gap of lattice-shaped electronics extraction electrode 10, all the other are not helped ionization by the electronics that electronics extraction electrode 10 captures in a large number, and therefore, Ionization Efficiency is low;
Also have, when using the good evaporation material of silicon or aluminium etc. and crucible material wettability, the inwall that the fused evaporation material can be climbed up crucible is exuded to outer wall, the evaporation back is because this steam, impedance meeting between crucible and the heater strip descends, just do not add voltage between them, film forming device just can not stably be worked, and forms high-quality film thereby hinder;
In addition, because ionizing wire in the ionization device 9 and electronics extraction electrode 10 are near nozzle 4, be positioned among the steam flow of nozzle 4 ejections, so, climb up the evaporation material that oozes out or attach on it easily from crucible from the evaporation material of nozzle ejection after condensation, if in the evaporation material silicon or aluminium etc. are arranged, then because these materials can with used material such as ionizing wire and electronics extraction electrode tantalum for example, molybdenum generation intense reaction, so, be exposed to ionizing wire 9 and electronics extraction electrode 10 in the steam flow, especially electronics extraction electrode 10 can be corroded, life-span becomes extremely short, and the material of the electronics extraction electrode that is corroded also can be sneaked into formed film 4, makes the downgrade of film.In order to prevent this from occurring, just must clean these parts termly.
Except that the problems referred to above, if control the acceleration of assembling thing by the potential difference (acceleration voltage) that changes 15 of accelerating electrode 14 and ground-electrodes, thereby control is formed at the character of the film on the substrate 16, then because the variation of acceleration voltage, the amount of derivative ionization structure set also changes, and especially when reducing acceleration voltage, the amount that arrives on-chip ionization assembly thing is just very little, just can not effectively utilize the characteristic of ionization structure set, form high-quality film.Then the electric field between accelerating electrode and ground-electrode dies down, and will inject substrate 16 from the electronics that ionizing wire 9 flies out to approaching zero if acceleration voltage is little, therefore makes its damaged.
In view of the foregoing, first purpose of the present invention is, a kind of more film forming device of long service live that has is provided.
Another purpose of the present invention is, provides a kind of ionization that can allow ionization device emit directly to contact with steam flow with electronics, and the assembly thing collision frequency in electronics and the steam flow is many, thereby can improve the film forming device of ionization efficiency.
A further object of the present invention is, even provide a kind of fused evaporation material to climb up on the sidewall of crucible, also can make its film forming device of evaporation stably.
The further purpose of the present invention is, provides a kind of energy evaporation to form the film forming device of the evaporated film of the electrical specification with similar monolithic thin film.
In order to achieve the above object, film forming device of the present invention does not re-use the sort of ionization electronics extraction electrode in the conventional art, adopts following two kinds of structures and replace.That is, wherein the ionization device of a kind of embodiment comprises: be located at the said nozzle relative position, be heated the negative electrode of ejected electron afterwards, and the anode that surrounds this negative electrode, crucible and heating unit.The ionization device of another kind of embodiment comprises: be located at away from the position of steam flow, to the electronics discharge device of steam flow emission ionization with electron beam, and make above-mentioned ionization make its Ionized ionization part with the reverse collision of assembly thing in electronics and the steam flow.
The film forming device that the present invention the 1st embodiment relates to, because the heat that negative electrode sends has heated near the nozzle of crucible, so, even climbing up also, the fused evaporation material can evaporate, can suppress swashing of evaporation material and ooze out, can prevent because of oozing out degradation problem under the corrosion that causes and the impedance.Because anode has surrounded crucible and heating unit, reach a high temperature so anode is heated again, evaporation material can be not attached thereto, therefore can prevent the corrosion that anode causes because of evaporation material yet.Therefore, film forming device can turn round on stability and high efficiency ground, and longer working life can be arranged.
No longer shine directly on the assembly thing because of the electronics of emitting again by the extraction electrode of lattice-shaped from negative electrode, thus electronics and the chance of assembling the thing collision can greatly be improved, so can improve Ionization Efficiency.
The film forming device that the present invention the 2nd embodiment relates to, because the electronics discharge device of its ionization device is arranged on the position away from steam flow, can directly not be exposed to the steam of evaporation material, can not be stained with evaporation material, so, even fierce reaction can take place with it in the steam of evaporation material, this electronics discharge device can not be corroded yet and shorten the life-span, and, the material of formation electronics discharge device can not sneaked into steam flow yet and be caused being formed at by the decline of the quality of the film on the evaporation thing, so can form high-quality film in stability and high efficiency ground.Again because its ionization part make ionization with the assembly thing direct inverse in electronics and the steam flow to collision, improved the probability of collision, so can improve Ionized efficient.
The simple declaration of accompanying drawing
Fig. 1 is the cross-sectional schematic of traditional film forming device;
Fig. 2 is the cross-sectional schematic of the film forming device that relates to of the present invention the 1st embodiment;
Fig. 3 is the cross-sectional schematic of the film forming device when the field generator for magnetic among Fig. 2 uses polarity to arrange consistent permanent magnet.
Fig. 4 is the cross-sectional schematic of the film forming device that relates to of the present invention the 2nd embodiment.
Fig. 5 shows the various structures of heater strip.
Following with reference to the description of drawings embodiments of the invention.Fig. 2 is that the present invention the 1st embodiment is shown is a kind of cross-sectional schematic of film forming device, among the figure, shown in symbol 2-5,7,12, the 16-18 with Fig. 1 in the same, so explanation is omitted.The 1st, make evaporation material 2 vaporific steams that the source take place, constituted by crucible 3 and heater strip 5.
The 21st, be located at the top that source 1 takes place steam, make and assemble thing 7 Ionized ionization devices, 22 negative electrodes that are provided in a side of with nozzle 4 relative position places are ionizing wire, through the energising heating with regard to ejected electron.The 23rd, the anode of encirclement ionizing wire 22, crucible 3 and heater strip 5.Above-mentioned ionizing wire 22 and anode 23 constitute ionization device 21.The 24th, be located at the field generator for magnetic in ionization device 21 outsides, the electric field that the magnetic field of its generation forms perpendicular to negative electrode 22 and anode 23.
The 25th, be located at ionization device 21 tops, make ionization assemble the booster machinery that thing 12 quickens towards substrate 16, the 26th, the accelerating electrode that fuses with anode 23, the 27th, extraction electrode, the 28th, the ground-electrode as control electrode is zero potential.Progressively leave nozzle 4 and dispose by the order of accelerating electrode 26, extraction electrode 27, ground-electrode 28, simultaneously, the ground electrode 28 that connects, accelerating electrode 26 are positive potential, and extraction electrode 27 is a negative potential.Also promptly, extraction electrode 27 relative accelerating electrodes 26 are negative potential, and ground-electrode 28 is the intermediate potential of two current potentials of accelerating electrode 26 and extraction electrode 27.Above-mentioned 3 electrodes 26,27,28 constitute booster machinery 25.
Its principle of work then is described.Same as in figure 1, with heater strip 5 heating crucibles 3, the steam that makes evaporation material 2 forms and assembles thing 7 from nozzle 4 ejections.In addition, ionizing wire 22 energising heating, 23 ejected electrons from ionizing wire 22 towards anode make its ionization with the collision of assembly thing.Wherein, because electronics needn't pass through the lattice-shaped gap of electronics extraction electrode 10 as shown in Figure 1, so can effectively utilize electronics.Again because be provided with field generator for magnetic 24 in the present embodiment, be the electric field that forms of ionizing wire 22 and anode 23 (about being in the drawings, depth direction) relatively by negative electrode, formed magnetic field perpendicular to the above-below direction of this electric field, so, above-mentioned electronics is not a moving linearly in the moving process of trend anode 23, but for the helical movement in horizontal plane, Ionization Efficiency further improves.
Again because nozzle 4 near be that the top of crucible 3 is ionized 22 heating of silk, so, even fused evaporation material 2 has been climbed up the inwall of crucible 3, also can be, and can not be exuded to the outer wall of crucible in the evaporation of the top of crucible 3.Also have, because surround heater strip 5 and crucible 3 and ionizing wire 22 with anode 23, so, anode 23 keeps high temperature, play simultaneously thermoshield again, therefore, the steam of evaporation material 2 can condensation attached on the anode 23, and also can not be full of steam between crucible 3 and the heater strip 5 and impedance is descended.And the heat that is produced by heater strip and ionizing wire can improve the pressure of the steam of evaporation material through the anodic heat shield effect, and the vapour pressure of this raising can be improved ionization efficiency.
In the present embodiment, ionizing wire 22 is owing to the steam flow that places on the nozzle 4, finally still can be corroded and need and change, but because ionizing wire 22 keeps high temperature, the steam of evaporation material 2 is difficult for condensation attached on the ionizing wire 22, so, send the source as ionization with the electronics of electronics, its life-span can be much higher than electronics of the prior art particularly wherein electronics extraction electrode of source is taken place, for example, when using the evaporation material of meeting intense reaction, the electronics generation source service life of prior art only 3 hours, and the electronics generation source service life of present embodiment can reach more than 100 hours.
Be ionized Ionized, the positively charged ionizations of device 21 and assemble thing 12 under, be drawn towards substrate 16 from ionization device 21 by accelerating electrode 26 and extraction electrode 27 formed electric field actions.When ionization assembly thing 12 passes through between extraction electrode 27 and the ground-electrode 28,,, ionization is decelerated so assembling thing 12 because 28 pairs of extraction electrodes of ground-electrode 27 are positively biased.The result is, ionization is assembled thing 12 and obtained the kinetic energy that the potential difference (acceleration voltage) because of 28 of accelerating electrode 26 and ground-electrodes produces.
Therefore, utilize the potential difference of 27 of accelerating electrode 26 and extraction electrodes, the amount that can make the ionization of drawing from ionization device 21 assemble thing 12 remains on the necessary level, simultaneously, utilize the ionization of acceleration voltage may command to assemble the acceleration of thing 12, can guarantee also during for example little acceleration voltage that ionization assembles the amount of thing 12.Assemble the amount of thing 12 owing to can guarantee ionization, can effectively control the impact velocity that thing and substrate are assembled in ionization again,, can control the character of formed film again easily so can form the film that has effectively utilized the ionization characteristic.
In addition, fly to the electronics of substrate 16 from ionizing wire 22 because be subjected to negative potential electric field that extraction electrode 27 forms prevention and can not incide substrate 16, thereby can not damage substrate.
In the above-described embodiments, on ionization device, be provided with accelerating electrode 26, extraction electrode 27 and control electrode 28, but when the potential difference of accelerating electrode 26 and 28 at (ground connection) electrode of control during greater than 1000 volts, extraction electrode 27 can omit, but has just reduced the handiness of installing like this.Work as acceleration voltage, promptly the potential difference of 28 of accelerating electrode 26 and control electrodes is less than 1000 volts even during less than 500 volts, and then the effect of the high-efficient operation of 27 pairs of film forming devices of extraction electrode is just very big.The potential difference that accelerating electrode 26 and control electrode are 28 should be selected less than 2000 volts, and this is because if greater than 2000 volts, and the excessive acceleration of assembling thing just can damage the formation of film.
In the above-described embodiments,, but also can use ionizing wire 22 double as heating units, come heating crucible by it with heater strip 5 heating crucibles 3.In addition, present embodiment is provided with field generator for magnetic 24, has further improved Ionized efficient, but the present invention also can be applicable to not establish the occasion of field generator for magnetic.
As mentioned above, having as above, the 1st embodiment of the present invention of structure has following effect, promptly because ionization device is by the negative electrode of being located at the nozzle relative position, and encirclement negative electrode and crucible, heating unit anode constituted, and be provided with field generator for magnetic again, so, the electronic energy that negative electrode sends directly is mapped to the assembly thing with spiral motion, improved Ionization Efficiency, be high temperature because reach anode near the nozzle of crucible again, so evaporation material can not be exuded to the crucible periphery, can be attached on the anode yet, therefore, can prevent the decline of impedance between the corrosion that causes because of evaporation material or crucible and the heating unit.
In addition, because booster machinery is the extraction electrode of negative potential by accelerating electrode, relative accelerating electrode, and the control electrode with intermediate potential of accelerating electrode and extraction electrode constitutes, so, the amount that can make ionization assemble thing remains on more than a certain level, and can control its acceleration, can also prevent that electronics from injecting substrate and damaging relative section.Certainly, booster machinery also can be constituted with top electrode by 3.For above-mentioned reasons, can obtain to stablize and high-efficient operation, can form high performance thin film high-quality thin film, long working life and form device.
Difference shown in Figure 3 and shown in Figure 2, just field generator for magnetic 24 wherein is not an electro permanent magnetic, but constitute with permanent magnet, that is,, circular magnet erecting frame 241 is set in the periphery of ionization device 21, the inside of this magnet erecting frame 241, a plurality of hole 241a that extend are vertically circumferentially arranged, and a plurality of permanent magnet 242 polar orientation are as one man inserted in the hole 241a that is installed in this magnet erecting frame 241, constitute field generator for magnetic by this magnet erecting frame 241 and permanent magnet 242.Though the magneticstrength of single permanent magnet 242 is little, but can produce highdensity magnetic flux, a plurality of permanent magnet polarity as one man are provided with, just can form magnetic field with high magnetic flux density, in other words, as if the permanent magnet that as one man is provided with polarity shown in Figure 3, as long as use volume more than the little device of electro permanent magnetic field generator for magnetic, just can produce magnetic field, just can make ionization for the helical movement effectively, assemble the Ionized efficient of thing thereby improve effectively with electronics with required magneticflux-density.And, by changing the number of permanent magnet 242, just can change the magneticflux-density in its magnetic field.In addition, in order to make field generator for magnetic 24 keep certain temperature, can be field generator for magnetic 24 the cooling sleeve pipe that water coolant is flow through in inside is set so that magnetic field keeps stable.
In the above-described embodiments, be provided with field generator for magnetic 24, the field direction of its generation is perpendicular to the electronic motion direction of being emitted by ionization device, so electronics is in negative electrode trend anodic process, do not move along a straight line, but, can increase the chance of the assembly thing collision in electronics and the steam flow, and the electronics of being got also can be for the helical movement from assemble thing along spiral motion, make its ionization with other steam collisions, assemble the Ionized efficient of thing thereby improve greatly.But obviously, if do not use this kind field generator for magnetic, and use other the device that can apply the applied field to the electronics of emitting by ionization device, as long as the direction in this applied field is different from the electronic motion direction of being sent by above-mentioned ionization device, electronics just can moving linearly in trend anodic moving process, and can do non-linear motion, correspondingly increase and the chance of assembling the thing collision, thereby improve Ionization Efficiency.Certainly, if the direction in applied field is perpendicular to the electronic motion direction, then effect is better.
Fig. 4 is the formation synoptic diagram of the present invention the 2nd embodiment.The same with Fig. 1, Fig. 2 in this figure, the 1st, the source takes place in steam, and the 2nd, evaporation material, the 3rd, accommodate the crucible of evaporation material 2, the 4th, be located at the nozzle on crucible 3 tops, 5 be provided in a side of around the crucible 3, the heater strip of heating crucible 3.In addition, the 6th, the insulcrete of the heat of shielding heater strip 5.Wherein crucible 3, heater strip 5 and heat-insulating shield 6 constitute steam generation source 1.The 17th, the vacuum tank of maintenance specified vacuum degree, the 18th, pumped vacuum systems.
Different with the 1st embodiment is, make the assembly thing 7 in the steam flow 20 become ionic ionization device 40, by the electronics discharge device to steam flow 20 divergent bundles is electron beam gun 41, and the ionization part 46 that the generation electric field makes ionization assemble thing 12 acceleration constitutes, that is, this ionization part is also used as booster machinery again.As shown in the figure, electron beam gun 41 is arranged on and leaves the position that steam flow 20 has suitable distance, the negative electrode 43 of ejected electron by use power supply 42 heating through heating, and because of producing electric field between direct supply 44 and the negative electrode 43, the accelerating electrode 45 that the electronics that negative electrode 43 is emitted quickens constitutes.Ionization part 46 mainly is made of discoideus control electrode 47 and ground-electrode 48, their middle body is provided with the circular hole that allows steam flow 20 pass through, control electrode 47 is by accelerating power source 55, ground-electrode 48 is kept positive potential, form electrostatic lens 53 with equipotential plane shown in the dotted line 52 among the figure by control electrode 47 and ground-electrode 48, so, can control the ionization of assembling things 7 with control electrode 47.In addition, heating is used for heating heater strip 5 with power supply 56, and direct supply 57 makes 3 pairs of heater strips of crucible 5 keep positive potential.
Electron beam gun 41 towards the top of ground-electrode 48, the outlet side divergent bundle 51 of the electrostatic lens 53 of steam flow 20.
53 ejected electron bundles 51 are introduced into the electrostatic lens 53 and are accelerated from electron beam gun 41 towards electrostatic lens, with the assembly thing 7 reverse collisions of upwards passing through in the steam flow 20 of electrostatic lens 53, make assembly thing 7 be ionized into ionization and assemble thing 12, this ionization is assembled thing 12 and is quickened and fly to substrate 16 by the potential difference of electrostatic lens, formation film 34.
As mentioned above, in the present embodiment, by using the outlet side divergent bundle 51 of electron beam gun 41 to electrostatic lens 53, and the electric field that utilizes electrostatic lens 53 to form is introduced the electronics in the electron beam 51 in the electrostatic lens 53, assembly thing 7 reverse-impacts in the steam flow 20 that makes it and just in electrostatic lens 53, moving upward, thereby improved electronics and assembled probability and the kinetic energy that thing 7 bumps against, therefore can improve to make and assemble thing 7 Ionized efficient.Be arranged on and leave the position that steam flow 20 has suitable distance because the electronics discharge device is an electron beam gun 41 again, can directly not touch the steam of evaporation material 2, so, even the steam of evaporation material shows fierce reactivity, electron beam gun 41 can not be corroded yet and shorten the life-span, and the material that constitutes electron beam gun 41 also can not sneaked into because of being corroded in the steam flow 20, therefore, can the film quality that form on the evaporation thing be descended because of having sneaked into this type of impurity in the steam flow 20.
In above-mentioned the 2nd embodiment, for forming electrostatic lens 53, being provided with two discoideus electrodes is control electrode 47 and ground-electrode 48, but, the electrode that also can be provided with more than 3 is controlled electronics and is assembled the thing ion, in addition, if do control electrode 47 and ground-electrode 48, also can receive same effect with being provided with the wire cloth that passes through part that allows steam flow 20 pass through.
Above-mentioned two embodiment are illustrated making the Ionized ICB device of assembly thing, but film forming device of the present invention also can be as molecular ray extension (エ PVC キ ミ ヤ Le) for example (MBE) film forming device of method and plasma spray device etc.
In above-mentioned two embodiment, the heater strip of crucible has adopted helix structure, and promptly heater strip is a spirally-wound.But heater strip also can adopt other structure formation, and is for example shown in Figure 5.Among Fig. 5, Fig. 5 a is common spiral heater strip, and remaining structure is then inequality, wherein with the structure formation of Fig. 5 c and Fig. 5 d for well because they be easy to make and heating efficiency also higher.
The inventive concept of above-mentioned two embodiment can combine, and makes the present invention more become perfect.
For example, the foregoing description 2 places position away from steam flow with electron beam gun, the problems such as corrosion that make the electronics generation not contact steam fully and avoided causing because of contact with emissive source, but do not provide tangible measure because of climbing up the problem of oozing out sidewall of crucible with the good wetting property of crucible material to the fused evaporation material.In other words, if aluminium or silicon are arranged, then the part evaporation material can ooze out from crucible in the evaporation material, and last space evaporation between heater strip and crucible causes operation to stablize and carries out.In the foregoing description 1, by ionizing wire is set on nozzle, utilize ionizing wire to heat nearly nozzle place as heating unit, solve above-mentioned evaporation material and climbed up the problem of oozing out.This design is applied among the 2nd embodiment, following two kinds of schemes can be arranged: a kind of scheme is, provide excessive electronics by electron beam gun, thereby make near the excessive electron impact position nozzle of heating crucible on the crucible, promptly, electron beam gun not only is used as the generation emissive source that makes the ionized electronics of assembly thing in the steam, and as heating unit the evaporation material in the crucible is evaporated.Another kind of scheme is, outside the steam flow passage of nozzle ejection heating unit is being set, with the nozzle peripheral region of this heating unit heating crucible so that evaporation material evaporate.Because this heating unit needn't produce the ionized electronics of assembly thing that makes in the steam, needn't as the ionizing wire among the 1st embodiment, place among the steam flow passage.Adopt these two kinds of schemes can have the advantage of the 1st and the 2nd embodiment concurrently.In addition, the structure of the booster machinery among above-mentioned the 1st embodiment can combine use with the 2nd embodiment, so just can as mentioned above Ionized assembly thing be controlled to greatest extent.
Confirmed already that its resistivity of film of utilizing device of the present invention to produce can approach the resistivity that monolithic thin film promptly is not the film that forms by evaporation.For example, when producing the aluminium film with existing evaporation coating technique, the resistivity that is obtained is about 10 microns-ohmcm, and if adopt the present invention, just can produce the film with 2.7 microns-ohmcm resistivity, this numeral is very approaching with the resistivity of monolithic thin film.And for example, as if the film of producing titanium with prior art, its resistivity is about 100 microns-ohmcm, but adopts the present invention, and resistivity can reach 60 microns-ohmcm, and this approaches the resistivity (57 microns-ohmcm) of monolithic thin film.The present invention can produce the film of higher density, and the density height causes above-mentioned lower resistivity, and the density height also can make film that substrate is had adhesion property preferably simultaneously.In addition, adopt technology of the present invention, than being easier to form monocrystalline, this point is helpful to the realization of the higher density of wanting required for the present invention.Except producing thin conductive film or semiconductor film, the present invention can also be used to producing the optical thin film with utmost point low absorptivity and high-reflectivity, and be very firm, particularly, can improve the laser apparatus damage threshold (damage threshold) of lens blooming greatly.For example, the optical thin film that prior art is produced, its laser apparatus damage threshold is at 2 joules centimetres
2About, and using the present invention, damage threshold can reach 8 joules centimetres
2The raising of laser apparatus damage threshold is useful especially to excite state atom or molecular laser.
Use the present invention not only can produce film preferably, but also can improve the speed of evaporation greatly.Use prior art, the speed of evaporation is about 0.1 micron/minute, and the present invention can reach 0.5 micron/minute.In addition, the working life that the source takes place electronics also can improve greatly, brings up to more than 100 hours from 3 hours.
Use technology of the present invention can also produce metallic circuit used on many semiconducter device, comprise the metallic circuit in the Drams microprocessor and form metallic circuit that storage capacitor uses etc.The lens that utilize device of the present invention also can produce to have high-reflectivity are for the usefulness of excite state atom or molecular laser.The present invention can also form the multi-layer type reflective film.
Claims (10)
1, a kind of film forming device, comprise: the crucible of accommodating evaporation material, heat this crucible and make the heating unit of the steam of above-mentioned evaporation material from the nozzle ejection of this crucible, make the Ionized ionization device of assembly thing by the steam generation of above-mentioned evaporation material, make Ionized above-mentioned assembly thing towards the booster machinery of film forming substrate flank ahead thereon, it is characterized in that, above-mentioned ionization device comprises: be located at the position relative with said nozzle, be heated and the negative electrode of ejected electron, and, surround the anode of this negative electrode, crucible and heating unit.
2, by the described film forming device of claim 1, it is characterized in that, above-mentioned booster machinery comprises: accelerating electrode, this accelerating electrode is the extraction electrode of negative potential relatively, control electrode with intermediate potential of above-mentioned accelerating electrode and extraction electrode, and these three electrodes are with the order of accelerating electrode, extraction electrode, control electrode, are configured in progressively the position away from said nozzle successively.
3, by the described film forming device of claim 2, it is characterized in that the potential difference between above-mentioned accelerating electrode and the control electrode is below 2000 volts.
4, by the described film forming device of claim 1, it is characterized in that also be provided with the device that applies the applied field to the electronics of being emitted by above-mentioned ionization device, the direction in this applied field is different from the electronic motion direction of being sent by above-mentioned ionization device.
5, by the described film forming device of claim 4, it is characterized in that the direction in above-mentioned applied field is perpendicular to above-mentioned electronic motion direction.
6,, it is characterized in that the above-mentioned device that electronics is applied the applied field is a magnetic devices by the described film forming device of claim 4.
By the described film forming device of claim 6, it is characterized in that 7, above-mentioned magnetic devices is included in a plurality of permanent magnets of the periphery polarity array configuration as one man vertically of above-mentioned ionization device.
8, a kind of film forming device, comprise: accommodate the crucible that forms the evaporation material that film uses, heat this crucible and make the heating unit of the steam of above-mentioned evaporation material from the nozzle ejection of this crucible, make the Ionized ionization device of assembly thing by the steam generation of above-mentioned evaporation material, make Ionized above-mentioned assembly thing towards the booster machinery of film forming substrate flank ahead thereon, it is characterized in that, above-mentioned ionization device comprises: be located at the position away from steam flow, to the electronics discharge device of steam flow emission ionization, and make above-mentioned ionization make its Ionized ionization part with electronics and the reverse collision of above-mentioned steam with electron beam.
9, by the described film forming device of claim 8, it is characterized in that above-mentioned electronics discharge device is an electron beam gun.
10,, it is characterized in that ionizing part comprises ground-electrode, and this ground-electrode keeps the control electrode of positive potential relatively by the described film forming device of claim 8.
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| CN 93115070 CN1103112A (en) | 1993-11-20 | 1993-11-20 | Apparatus for forming thin film |
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| CN 93115070 CN1103112A (en) | 1993-11-20 | 1993-11-20 | Apparatus for forming thin film |
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| CN1328408C (en) * | 2002-11-30 | 2007-07-25 | 应用材料股份有限两合公司 | Evaporation device |
| CN100402693C (en) * | 2002-07-23 | 2008-07-16 | 三星Sdi株式会社 | Heating crucible and deposite device using the heating crucible |
| CN100457966C (en) * | 2002-09-03 | 2009-02-04 | 三星Sdi株式会社 | Heating crucible for organic film forming squipment |
| CN102224275A (en) * | 2009-04-03 | 2011-10-19 | 东京毅力科创株式会社 | Deposition head and film forming apparatus |
| CN102994958A (en) * | 2012-12-14 | 2013-03-27 | 深圳先进技术研究院 | Heat evaporation source of heat evaporation coating equipment |
| CN103122449A (en) * | 2011-11-21 | 2013-05-29 | 鸿富锦精密工业（深圳）有限公司 | Ionization device and coating device applying same |
| CN108660420A (en) * | 2018-07-25 | 2018-10-16 | 华夏易能（广东）新能源科技有限公司 | Vacuum evaporation equipment and evaporation source |
| CN116536627A (en) * | 2023-07-06 | 2023-08-04 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
-
1993
- 1993-11-20 CN CN 93115070 patent/CN1103112A/en active Pending
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| CN100402693C (en) * | 2002-07-23 | 2008-07-16 | 三星Sdi株式会社 | Heating crucible and deposite device using the heating crucible |
| US8025733B2 (en) | 2002-07-23 | 2011-09-27 | Samsung Mobile Display Co., Ltd. | Heating crucible and deposition apparatus using the same |
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| US7962016B2 (en) | 2002-09-03 | 2011-06-14 | Samsung Mobile Display Co., Ltd. | Heating crucible for organic thin film forming apparatus |
| CN1328408C (en) * | 2002-11-30 | 2007-07-25 | 应用材料股份有限两合公司 | Evaporation device |
| CN102224275B (en) * | 2009-04-03 | 2013-09-11 | 东京毅力科创株式会社 | Deposition head and film forming apparatus |
| CN102224275A (en) * | 2009-04-03 | 2011-10-19 | 东京毅力科创株式会社 | Deposition head and film forming apparatus |
| CN103122449B (en) * | 2011-11-21 | 2017-02-15 | 管炜 | Ionization device and coating device applying same |
| CN103122449A (en) * | 2011-11-21 | 2013-05-29 | 鸿富锦精密工业（深圳）有限公司 | Ionization device and coating device applying same |
| CN102994958A (en) * | 2012-12-14 | 2013-03-27 | 深圳先进技术研究院 | Heat evaporation source of heat evaporation coating equipment |
| CN108660420A (en) * | 2018-07-25 | 2018-10-16 | 华夏易能（广东）新能源科技有限公司 | Vacuum evaporation equipment and evaporation source |
| WO2020019538A1 (en) * | 2018-07-25 | 2020-01-30 | 华夏易能（广东）新能源科技有限公司 | Vacuum evaporation apparatus and evaporation source device |
| CN116536627A (en) * | 2023-07-06 | 2023-08-04 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
| CN116536627B (en) * | 2023-07-06 | 2024-01-19 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
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