CN102994958A - Heat evaporation source of heat evaporation coating equipment - Google Patents
Heat evaporation source of heat evaporation coating equipment Download PDFInfo
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- CN102994958A CN102994958A CN2012105443350A CN201210544335A CN102994958A CN 102994958 A CN102994958 A CN 102994958A CN 2012105443350 A CN2012105443350 A CN 2012105443350A CN 201210544335 A CN201210544335 A CN 201210544335A CN 102994958 A CN102994958 A CN 102994958A
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Abstract
The invention discloses a heat evaporation source of heat evaporation coating equipment. The heat evaporation source comprises a substrate for depositing a film, a crucible for loading an evaporation material and a heating component for heating the crucible, wherein multiple nozzles opposite to the substrate are formed on the crucible; and the distances between every two adjacent nozzles of the multiple nozzles are not completely equal. By adopting a non-uniform distribution mode of nozzles, the spraying position of each nozzle on the substrate plane is changed; and total spraying material on the substrate is the sum of the spraying material of each nozzle, and thus the uniformity of evaporation coating is improved.
Description
Technical field
The present invention relates to vacuum coating film equipment, particularly relate to a kind of thermal evaporation sources of thermal evaporation filming equipment.
Background technology
The thermal evaporation plating method is to utilize the methods such as current flow heats, electron beam heating or LASER HEATING to make evaporating materials become cluster, molecule or atom in vacuum environment, do nearly free movement with larger free path, when these free-moving molecules or atomic collision to the lower substrate of temperature, it is lower just to condense at substrate, and deposition covers and forms film on the substrate.The thermal evaporation plating method has the advantage of purity height, advantages of good crystallization, is usually used in manufacturing of metallic film, semiconductor film, thin-film solar cells material.
Holding also, the device of heating evaporation material is called as thermal evaporation sources.Geometry according to thermal evaporation sources is different, can be divided into an evaporation source, face evaporation source and electron gun stove.The characteristics of some evaporation source are that steam distribution is evenly distributed in the space all directions, and the steam of face evaporation source is only to the spatial distribution of half, and the electron gun stove then is that crucible is arranged, and evaporating materials only the opening from the crucible eject.Compare with an evaporation source and face evaporation source, the electron gun stove and accessory has that line is stable, direction is adjustable, distribution is directed, save raw-material characteristics, the occasion that film thickness and stability of material are had relatively high expectations commonly used, such as the small sample of in the laboratory material character being had relatively high expectations, the size of sample is no more than 10cm usually.
See also Fig. 1, be depicted as the evaporation line distribution schematic diagram of traditional electron gun stove with individual nozzle.Wherein, 101 substrates, the 102nd, crucible, the 103rd, solid-state or the fusing evaporating materials, the 104th, the steam of evaporating materials, the 105th, the height l of nozzle, the 106th, the opening size d of nozzle, the 107th, nozzle exit area also is the axis of the evaporation line of nozzle to the vertical range h of substrate simultaneously, 108 and 109 be respectively on the substrate arbitrarily saltation point with respect to spout apart from r and oblique angle θ, the 110th, this nozzle at the thickness of deposit film on the substrate along the distribution curve on the paper.In evaporative process, substrate 101 moves along the direction perpendicular to paper, and nozzle ejection evaporating materials is out depositing to substrate 101.As can be seen from Figure 1, high in the middle of the thickness of the deposit film of single nozzle on substrate, both sides are low, and are even not.
In the industry line of type of production, the size of substrate is usually larger, needs the evaporation area coverage of evaporation source larger, and general plated film interval is not less than 30cm, and the stable controllability to homogeneity and evaporative process is had relatively high expectations, and also needs higher vaporator rate to improve productive rate.Evenly distributed a plurality of thermal evaporation sources nozzles can't guarantee the uniformity requirement of film at present.
Summary of the invention
Based on this, the homogeneity that is necessary to provide a kind of deposition plating is the thermal evaporation sources of thermal evaporation filming equipment preferably.
A kind of thermal evaporation sources of thermal evaporation filming equipment comprises substrate for deposit film, is used for loading the crucible of evaporating materials, and is used for heating the heating component of described crucible; Described crucible is provided with the relative nozzle of a plurality of and described substrate, and the distance between per two adjacent nozzles in described a plurality of nozzles does not equate entirely.
Among embodiment, the height of each nozzle equates with the A/F of described nozzle therein.
Among embodiment, described a plurality of nozzles are spaced successively along straight line therein, and each nozzle equates to the distance of described substrate.
Among embodiment, the quantity of described a plurality of nozzles is odd number therein, and described a plurality of nozzles distribute take the axis of a nozzle of centre as the symmetry axis mirror image.
Among embodiment, larger than the distance between submarginal two nozzles near the distance between two middle nozzles therein.
Therein among embodiment, distance between described substrate and the described a plurality of nozzle is 20cm, the quantity of described a plurality of nozzles is 13, and the distance between described 13 nozzles is than being followed successively by 3.7:3.9:4.1:4.3:4.5:4.7:4.7:4.5:4.3:4.1:3.9:3.7.
Among embodiment, the distance between described substrate and the described a plurality of nozzle is 30cm therein, and the quantity of described a plurality of nozzles is 11, and the distance between described 13 nozzles is than being followed successively by 3:4:5:6:7:7:6:5:4:3.
Therein among embodiment, distance between described substrate and the described a plurality of nozzle is 20cm, if the width of described substrate is f, the quantity of described a plurality of nozzles is 11, and the distance between described 11 nozzles is than being followed successively by 0.1f:0.1f:(0.05f+5): (0.9f+1.6): (0.9f+1.6): (0.9f+1.6): (0.9f+1.6): (0.05f+5): 0.1f: 0.1f.
Therein among embodiment, distance between described substrate and the described a plurality of nozzle is 30cm, if the width of described substrate is f, the quantity of described a plurality of nozzles is 11, and the distance between described 11 nozzles is than being followed successively by 3:3:(0.2f+2): (0.05f+4): (0.05f+4): (0.05f+4): (0.05f+4): (0.2f+2): 3:3.
Among embodiment, the material of described substrate is glass, polymkeric substance, metal, semi-conductor or pottery therein.
Adopt the nozzle arrangement mode of non-uniform Distribution, changed the position of each nozzle ejection on the substrate plane, and the total blasting materials on the substrate is the stack of each nozzle ejection material, thereby improves the homogeneity of evaporation coating.
Description of drawings
Fig. 1 is the evaporation line distribution schematic diagram of the traditional thermal evaporation sources with individual nozzle;
Fig. 2 is the evaporation line distribution schematic diagram of thermal evaporation sources of the thermal evaporation filming equipment of an embodiment;
Fig. 3 is the evaporation line distribution schematic diagram of thermal evaporation sources of the thermal evaporation filming equipment of another embodiment.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar improvement in the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
See also Fig. 2, the thermal evaporation sources of the thermal evaporation filming equipment of an embodiment comprises substrate 201 for deposit film, is used for loading the crucible 203 of evaporating materials 204, and is used for the heating component 202 of heating crucible 203.The top of crucible 203 is provided with the relative nozzle 207 of a plurality of and substrate 201201.
Crucible 203 be shaped as square or circular box body, it is housed in the heating component 202.The material of crucible 203 and nozzle 207 is high temperature refractory.The maximum heating temperature of crucible 203 and nozzle 207 is 1500 ° of C, by thermopair monitoring and feed back to controlled heating power supply.
Evaporating materials 204 include but not limited to gold and silver, copper, indium, gallium, zinc, tin, etc. metal, and selenium, sulphur, phosphorus etc. are nonmetal, and the mineral compound such as organic compound or Sodium Fluoride, magnesium fluoride, silicon oxide.But can be used for line source structure evaporation metal film or compound film among the present invention, or be used for coevaporation and prepare compound semiconductor material and (include but not limited to copper-indium-galliun-selenium, copper indium gallium sulphur, Cu-In-Ga-Se-S, copper-zinc-tin-sulfur etc.), perhaps evaporation optical thin film (Sodium Fluoride, magnesium fluoride, silicon oxide etc.), or be used for evaporation organic or inorganic luminescent material (LED or OLED preparation).Evaporating materials 204 is subjected to thermal evaporation to form steam 205, from nozzle 207 ejections.
Being shaped as of each nozzle 207 is cylindrical or square.The A/F of the height of each nozzle 207 and nozzle 207 about equally, the injection line angular distribution of each nozzle is more moderate like this, is not to disperse very much, neither be too concentrated, realize easily preferably homogeneity.A plurality of nozzles 207 are spaced along straight line successively at the top of crucible 203, and each nozzle 207 is equal to the distance of substrate 201.Also be provided with well heater and shield assemblies 206 around each nozzle 207.Can keep preferably like this temperature of nozzle, the material steam 205 that avoids evaporating condenses at the nozzle place, has improved the stability of plated film.
Distance between per two adjacent nozzles 207 in a plurality of nozzles 207 do not equate entirely, namely have at least two between the adjacent nozzle 207 distance and the distance between other two adjacent nozzles 207 do not wait.Adopt the nozzle arrangement mode of this non-uniform Distribution, changed the position of each nozzle ejection on the substrate plane, and the total blasting materials on the substrate is the stack of each nozzle ejection material, thereby improves the homogeneity of evaporation coating.
In the present embodiment, the quantity of nozzle 207 is 11 or 13, and 11 or 13 nozzles distribute take the axis 210 of a middle nozzle as the symmetry axis mirror image.These 11 nozzles 207 distance between any two from left to right is followed successively by d5, d4, d3, d2, d1, d1, d2, d3, d4, d5.Among the application, the distance between two nozzles is defined as the minor increment of the medullary ray of two nozzles.As seen from Figure 2, the distance between two nozzles 207 of close centre is larger than the distance between submarginal two nozzles, i.e. d1〉d2〉d3〉d4〉d5.
Above-mentioned five distances and following relating to parameters: substrate 201 and nozzle 207 spacings 208; The width of substrate 201.
Sedimentation rate on the substrate is that each nozzle is added up to the sedimentation rate on the substrate, and the Main Basis of weighing the nozzle arrangement quality is the homogeneity of total sedimentation rate.Heterogeneity is defined as the plated film interval along sedimentation rate maximum value and the difference of minimum value and the ratio of maximum value and minimum value sum of nozzle arrangement direction.Below for typical substrate and injector spacing (20cm, 30cm), and in the thermal evaporation plated film under the typical plated film fabric width (30cm, 40cm, 50cm, 60cm) to arrangement scheme and corresponding heteropical result of delivery nozzle:
1. substrate and injector spacing are in the situation of 20cm, and in the nozzle arrangement scheme of optimization, nozzle adds up to 13, and the spacing ratio between nozzle is:
d1:d2:d3:d4:d5:d6=4.7:4.5:4.3:4.1:3.9:3.7 （I）
(1) substrate and injector spacing are 20cm, the fabric width of plated film is in the situation of 30cm, the spacing of d1, d2, d3, d4, d5, d6 is respectively 4.00cm, 3.83cm, 3.66cm, 3.49cm, 3.32cm, 3.15cm, the width between centers of two nozzles at edge is 43cm, the heterogeneity of sedimentation rate is no more than ± and 3%.
(2) substrate and injector spacing are 20cm, the fabric width of plated film is in the situation of 40cm, the spacing of d1, d2, d3, d4, d5, d6 is respectively 4.7cm, 4.5cm, 4.3cm, 4.1cm, 3.9cm, 3.7cm, the width between centers of two nozzles at edge is 50cm, the heterogeneity of sedimentation rate is no more than ± and 5%.
(3) substrate and injector spacing are 20cm, the fabric width of plated film is in the situation of 50cm, the spacing of d1, d2, d3, d4, d5, d6 is respectively 5.64cm, 5.4cm, 5.16cm, 4.92cm, 4.68cm, 4.44cm, the width between centers of two nozzles at edge is 60cm, the heterogeneity of sedimentation rate is no more than ± and 6%.
(4) substrate and injector spacing are 20cm, the fabric width of plated film is in the situation of 60cm, the spacing of d1, d2, d3, d4, d5 is respectively 6.35cm, 6.08cm, 5.81cm, 5.54cm, 5.27cm, 5.0cm, the width between centers of two nozzles at edge is 68cm, the heterogeneity of sedimentation rate is no more than ± and 7%.
2. be in the situation of 30cm to substrate and injector spacing, in the nozzle arrangement scheme of optimization, nozzle adds up to 11, and the spacing ratio between nozzle is:
d1:d2:d3:d4:d5=7:6:5:4:3 （II）
(1) substrate and injector spacing are 30cm, the fabric width of plated film is in the situation of 30cm, the spacing of d1, d2, d3, d4, d5 is respectively 6.4cm, 5.5cm, 4.6cm, 3.7cm, 2.8cm, and the width between centers of two nozzles at edge is 46cm, and the heterogeneity of film is no more than ± and 3%.
(2) substrate and injector spacing are 30cm, the fabric width of plated film is in the situation of 40cm, the spacing of d1, d2, d3, d4, d5 is respectively 7cm, 6cm, 5cm, 4cm, 3cm, and the width between centers of two nozzles at edge is 50cm, and the heterogeneity of film is no more than ± and 5%.
(3) substrate and injector spacing are 30cm, the fabric width of plated film is in the situation of 50cm, the spacing of d1, d2, d3, d4, d5 is respectively 7.7cm, 6.6cm, 5.5cm, 4.4cm, 3.3cm, and the width between centers of two nozzles at edge is 55cm, and the heterogeneity of film is no more than ± and 8%.
(4) substrate and injector spacing are 30cm, the fabric width of plated film is in the situation of 60cm, the spacing of d1, d2, d3, d4, d5 is respectively 8.75cm, 7.5cm, 6.25cm, 5cm, 3.75cm, and the width between centers of two nozzles at edge is 62.5cm, and the heterogeneity of film is no more than ± and 10%.
Among Fig. 2, the 209th, the spray beam of nozzle 207 flows to the distribution curve that reaches substrate.The 211st, the injection curve of all nozzles arrives the distribution curve of the film thickness that stack forms on the substrate.Hence one can see that, in heteropical nozzle arrangement mode, the nozzle arrangement of edge is closeer, sedimentation rate the reducing in edge of main injection group in the middle of can compensating, arrangement is compared with homogeneity, and the nozzle that heterogeneity is arranged has improved homogeneity and the material use efficiency of coating film thickness.
Be appreciated that coefficient and constant among formula I and the formula II can have the change scope, but basic arrangement scheme is constant.If spacing between 10cm and 20cm, can adopt the gradual change arrangement mode between formula I and formula II; If spacing between 20cm and 30cm, can adopt the gradual change arrangement mode between formula I and formula II.
See also Fig. 3, the thermal evaporation sources of the thermal evaporation filming equipment of another embodiment and the structure of aforementioned hot evaporation source are roughly the same, for the substrate 301 of deposit film, for the crucible 303 that loads evaporating materials 304, reach the heating component 302 that is used for heating crucible 303.The top of crucible 303 is provided with the relative nozzle 307 of a plurality of and substrate 301, and its difference technical characterictic is, the spacing of the adjacent nozzle on from the central nozzle to the limit does not reduce gradually, subtracts but have to increase to have.Wherein two d2 spacings are used for nozzle is divided into three groups, and 5 central nozzles form the main injection groups, and wherein adjacent spacing is d1, and respectively there is one group of compensation group on both sides, and each group inner nozzle equidistantly distributes with d3, separates with spacing d2 between group and the group.
Compare with the gradual change arrangement scheme, the nozzle grouping has two advantages: 1, processing is simple, and the portion nozzle spacing is identical to add the identical difficulty that reduces processing of heat shield assembly with part; 2, grouping make each group functional independence out so that parameter a plurality of spacings from the gradual change scheme that need to change during process reform are reduced to 3 feature pitch d1, d2, d3, it is easier to regulate.
1, being the situation of 20cm for nozzle and substrate spacing, is f (cm) for the width of substrate 301, and three feature pitch in the grouping spray prescription case are respectively (take cm as unit):
d1=0.09*f+1.6;
d2=0.05*f+5;
d3=0.1*f （III）
By the nozzle that above feature pitch is arranged, its heterogeneity all is no more than ± and 5%.With plated film fabric width 30cm, 40cm, 50cm, 60cm are example:
(1) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 30cm, d1=4.3cm, d2=6.5cm, d3=3cm, and the width between centers of two nozzles at edge is 42cm, the heterogeneity of film is no more than ± and 3%.
(2) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 40cm, d1=5.2cm, d2=7cm, and d3=4cm, the width between centers of two nozzles at edge is 51cm, the heterogeneity of film is no more than ± and 3%.
(3) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 50cm, d1=6.1cm, d2=7.5cm, d3=5cm, and the width between centers of two nozzles at edge is 60cm, the heterogeneity of film is no more than ± and 3%.
(4) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 60cm, d1=7cm, d2=8cm, d3=6cm, and the width between centers of two nozzles at edge is 68cm, the heterogeneity of film is no more than ± and 5%.
2, be the situation of 30cm for nozzle and substrate spacing, for the width f (cm) of substrate 301, three feature pitch in the grouping spray prescription case are respectively (take cm as unit):
d1=0.05*f+4;
d2=0.2*f+2;
d3=3 （IV）
By the nozzle that above feature pitch is arranged, its heterogeneity all is no more than ± and 5%.With plated film fabric width 30cm, 40cm, 50cm, 60cm are example:
(1) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 30cm, d1=5.5cm, d2=8cm, d3=3cm, and the width between centers of two nozzles at edge is 44cm, the heterogeneity of film is no more than ± and 3%.
(2) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 40cm, d1=6cm, d2=10cm, d3=3cm, and the width between centers of two nozzles at edge is 56cm, the heterogeneity of film is no more than ± and 3%.
(3) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 50cm, d1=6.5cm, d2=12cm, d3=3cm, and the width between centers of two nozzles at edge is 62cm, the heterogeneity of film is no more than ± and 3%.
(4) substrate and injector spacing are 30cm, and the fabric width of plated film is in the situation of 60cm, d1=7cm, d2=14cm, d3=3cm, and the width between centers of two nozzles at edge is 68cm, the heterogeneity of film is no more than ± and 5%.
Hence one can see that, the arrangement mode of employing packet type spacing provides the linear evaporation source nozzle distribution scheme of high uniformity, and substrate and injector spacing are from 10cm to 30cm, and the plated film fabric width is from 30cm to 60cm, the heterogeneity of deposition plating all is no more than ± and 5%, homogeneity is better.
Be appreciated that coefficient and constant among formula III and the formula IV can have the change scope, but basic arrangement scheme is constant.If spacing between 10cm and 20cm, can adopt the gradual change arrangement mode between formula III and formula IV; If spacing between 20cm and 30cm, can adopt the gradual change arrangement mode between formula III and formula IV.
The width of substrate also is not limited to 30cm, 40cm, 50cm, 60cm, the gradual change arrangement mode that can adopt according to the spacing between substrate and the nozzle by formula I, formula II, formula III and formula IV or describe between these several formula.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the thermal evaporation sources of a thermal evaporation filming equipment comprises substrate for deposit film, is used for loading the crucible of evaporating materials, and is used for heating the heating component of described crucible; It is characterized in that described crucible is provided with the relative nozzle of a plurality of and described substrate, the distance between per two adjacent nozzles in described a plurality of nozzles does not equate entirely.
2. the thermal evaporation sources of thermal evaporation filming equipment according to claim 1 is characterized in that, the height of each nozzle equates with the A/F of described nozzle.
3. the thermal evaporation sources of thermal evaporation filming equipment according to claim 1 is characterized in that, described a plurality of nozzles are spaced successively along straight line, and each nozzle is equal to the distance of described substrate.
4. the thermal evaporation sources of thermal evaporation filming equipment according to claim 3 is characterized in that, the quantity of described a plurality of nozzles is odd number, and described a plurality of nozzles distribute take the axis of a nozzle of centre as the symmetry axis mirror image.
5. the thermal evaporation sources of thermal evaporation filming equipment according to claim 4 is characterized in that, and is larger than the distance between submarginal two nozzles near the distance between two middle nozzles.
6. the thermal evaporation sources of thermal evaporation filming equipment according to claim 5, it is characterized in that, distance between described substrate and the described a plurality of nozzle is 20cm, the quantity of described a plurality of nozzles is 13, and the distance between described 13 nozzles is than being followed successively by 3.7:3.9:4.1:4.3:4.5:4.7:4.7:4.5:4.3:4.1:3.9:3.7.
7. the thermal evaporation sources of thermal evaporation filming equipment according to claim 5, it is characterized in that, distance between described substrate and the described a plurality of nozzle is 30cm, the quantity of described a plurality of nozzles is 11, and the distance between described 13 nozzles is than being followed successively by 3:4:5:6:7:7:6:5:4:3.
8. the thermal evaporation sources of thermal evaporation filming equipment according to claim 4, it is characterized in that, distance between described substrate and the described a plurality of nozzle is 20cm, if the width of described substrate is f, the quantity of described a plurality of nozzles is 11, and the distance between described 11 nozzles is than being followed successively by 0.1f:0.1f:(0.05f+5): (0.9f+1.6): (0.9f+1.6): (0.9f+1.6): (0.9f+1.6): (0.05f+5): 0.1f:0.1f.
9. the thermal evaporation sources of thermal evaporation filming equipment according to claim 4, it is characterized in that, distance between described substrate and the described a plurality of nozzle is 30cm, if the width of described substrate is f, the quantity of described a plurality of nozzles is 11, and the distance between described 11 nozzles is than being followed successively by 3:3:(0.2f+2): (0.05f+4): (0.05f+4): (0.05f+4): (0.05f+4): (0.2f+2): 3:3.
10. the thermal evaporation sources of thermal evaporation filming equipment according to claim 1 is characterized in that, the material of described substrate is glass, polymkeric substance, metal, semi-conductor or pottery.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234682A (en) * | 2017-07-10 | 2019-01-18 | 合肥欣奕华智能机器有限公司 | A kind of linear evaporation source and vacuum deposition apparatus |
| CN110306199A (en) * | 2019-06-10 | 2019-10-08 | 深圳大学 | A kind of carbon dioxide electro-catalysis reduction film and the preparation method and application thereof |
| TWI825433B (en) * | 2020-06-29 | 2023-12-11 | 美商應用材料股份有限公司 | Nozzle assembly for guiding an evaporated material to a substrate, evaporation source and deposition system and method for depositing an evaporated material onto a substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1103112A (en) * | 1993-11-20 | 1995-05-31 | 三菱电机株式会社 | Apparatus for forming thin film |
| CN1308145A (en) * | 2000-11-17 | 2001-08-15 | 武汉大学 | Gallium nitride film preparing technology and special equipment |
| US20040035366A1 (en) * | 2002-07-23 | 2004-02-26 | Samsung Nec Mobile Display Co., Ltd. | Heating crucible and deposition apparatus using the same |
| US20040223750A1 (en) * | 2003-05-08 | 2004-11-11 | Tetsuro Endo | Evaporation apparatus |
| CN1814854A (en) * | 2005-01-31 | 2006-08-09 | 三星Sdi株式会社 | Vapor deposition source and vapor deposition apparatus having the same |
| WO2012086568A1 (en) * | 2010-12-24 | 2012-06-28 | シャープ株式会社 | Vapor deposition device, vapor deposition method, and method of manufacturing organic electroluminescent display device |
-
2012
- 2012-12-14 CN CN201210544335.0A patent/CN102994958B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1103112A (en) * | 1993-11-20 | 1995-05-31 | 三菱电机株式会社 | Apparatus for forming thin film |
| CN1308145A (en) * | 2000-11-17 | 2001-08-15 | 武汉大学 | Gallium nitride film preparing technology and special equipment |
| US20040035366A1 (en) * | 2002-07-23 | 2004-02-26 | Samsung Nec Mobile Display Co., Ltd. | Heating crucible and deposition apparatus using the same |
| US20040223750A1 (en) * | 2003-05-08 | 2004-11-11 | Tetsuro Endo | Evaporation apparatus |
| CN1814854A (en) * | 2005-01-31 | 2006-08-09 | 三星Sdi株式会社 | Vapor deposition source and vapor deposition apparatus having the same |
| WO2012086568A1 (en) * | 2010-12-24 | 2012-06-28 | シャープ株式会社 | Vapor deposition device, vapor deposition method, and method of manufacturing organic electroluminescent display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234682A (en) * | 2017-07-10 | 2019-01-18 | 合肥欣奕华智能机器有限公司 | A kind of linear evaporation source and vacuum deposition apparatus |
| CN110306199A (en) * | 2019-06-10 | 2019-10-08 | 深圳大学 | A kind of carbon dioxide electro-catalysis reduction film and the preparation method and application thereof |
| CN110306199B (en) * | 2019-06-10 | 2021-08-31 | 深圳大学 | Carbon dioxide electrocatalytic reduction film and preparation method and application thereof |
| TWI825433B (en) * | 2020-06-29 | 2023-12-11 | 美商應用材料股份有限公司 | Nozzle assembly for guiding an evaporated material to a substrate, evaporation source and deposition system and method for depositing an evaporated material onto a substrate |
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| CN102994958B (en) | 2014-12-24 |
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