CN110311008A - Optical detection device and light detection range unit - Google Patents

Optical detection device and light detection range unit Download PDF

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Publication number
CN110311008A
CN110311008A CN201811274233.5A CN201811274233A CN110311008A CN 110311008 A CN110311008 A CN 110311008A CN 201811274233 A CN201811274233 A CN 201811274233A CN 110311008 A CN110311008 A CN 110311008A
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CN
China
Prior art keywords
semiconductor layer
layer
detection device
impurity concentration
optical detection
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Granted
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CN201811274233.5A
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CN110311008B (en
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国分弘一
松本展
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
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Abstract

The disclosure provides light detection high-efficient optical detection device.Optical detection device has: being set to the silicon layer of the 1st conductivity type in the 1st main surface of semiconductor substrate；1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms p/n boundary with the 1st semiconductor layer；3rd semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer, is separated with the 1st semiconductor layer；It is connected to the 1st electrode of the silicon layer；And it is connected to the 2nd electrode of the 2nd semiconductor layer.

Description

Optical detection device and light detection range unit
The application is enjoyed with Japanese patent application 2018-053353 (applying date: on March 20th, 2018) as earlier application Priority.The application is by referring to the earlier application and including the full content of the earlier application.
Technical field
Embodiment is related to optical detection device and light detection range unit.
Background technique
In recent years, as one of the device for realizing automatic Pilot, vehicle-mounted LIDAR (Light Detection is developed And Ranging: light detection range unit).Vehicle-mounted LIDAR by make infrared laser vibrate laser oscillator, scanning it is red The scanning optics of outer line laser is detected from the structures such as the optical detection device of the infrared ray after object reflection and control circuit At.Thereby, it is possible to identify the shape and/or distance that are located at remote object.As optical detection device, it is able to use SiPM (Silicon Photomultiplier: silicon photomultiplier).But since the infrared absorption rate of silicon is low, it is therefore desirable for mentioning PDE (Photon Detection Efficiency: light detection efficiency) in high SiPM.
Summary of the invention
Subject to be solved by the invention
Embodiment is designed to provide the high-efficient optical detection device of light detection.
A technical solution to solve project
The optical detection device that embodiment is related to has: silicon layer is set in the 1st main surface of semiconductor substrate, is the 1st Conductivity type；1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, impurity concentration of the impurity concentration than the silicon layer It is high；2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；3rd semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer, with 1st semiconductor layer separates；It is connected to the 1st electrode of the silicon layer；And it is connected to the 2nd of the 2nd semiconductor layer Electrode.
According to the optical detection device of above structure, light detection efficiency can be improved.
Detailed description of the invention
Fig. 1 is the top view for indicating optical detection device of the first embodiment.
Fig. 2 is the top view for indicating the region A of Fig. 1.
Fig. 3 is sectional view obtained by B-B ' wire cutting as shown in Figure 2.
Fig. 4 is the circuit diagram for indicating optical detection device of the first embodiment.
Fig. 5 is the figure for indicating the work of optical detection device of the first embodiment.
Fig. 6 is the figure for indicating the effective coverage of optical detection device of the first embodiment.
Fig. 7 is that horizontal axis is the impurity concentration of peripheral p+ type layer, the expression periphery p+ type layer that the longitudinal axis is light detection efficiency (PDE) The impurity concentration curve graph of influence that light detection efficiency is generated.
Fig. 8 is the sectional view for the optical detection device for indicating that the variation of the 1st embodiment is related to.
Fig. 9 is the sectional view for the optical detection device for indicating that comparative example is related to.
Figure 10 is the sectional view for indicating optical detection device of the second embodiment.
Figure 11 is the sectional view for indicating optical detection device of the third embodiment.
Figure 12 is the sectional view for indicating optical detection device of the fourth embodiment.
Figure 13 is the sectional view for indicating optical detection device of the fifth embodiment.
The explanation of appended drawing reference
1,1a, 2,3,4,5: optical detection device；11:SiPM element；20: silicon substrate；21: epitaxial layer；21a, 21b: part； 22:p+ type layer；22a: hole；23:n+ type layer；The boundary 24:pn；25: diode；26: peripheral p+ type layer；27: peripheral insulating layers； 28: peripheral insulative component；28a: upper surface；28b: lower surface；29: peripheral conductive layer；30:LOCOS film；31,32: electrode film； 33: resistive element；40: depletion layer；45: effective coverage；101: optical detection device；E-: electronics；H+: hole；P: photon.
Specific embodiment
(the 1st embodiment)
Firstly, the 1st embodiment is illustrated.
Fig. 1 is the top view for indicating optical detection device of the present embodiment.
Fig. 2 is the top view for indicating the region A of Fig. 1.
Fig. 3 is sectional view obtained by B-B ' wire cutting as shown in Figure 2.
Fig. 4 is the circuit diagram for indicating optical detection device of the present embodiment.
In addition, each figure is all schematic diagram, each component is suitably simplified or is omitted.It is also the same about aftermentioned figure.
As shown in Figure 1, multiple SiPM elements 11 are arranged in rectangular in optical detection device 1 of the present embodiment. In optical detection device 1, for example, 48 SiPM elements 11 are arranged in 6 rows 8 column.Optical detection device 1 passes through semiconductor technology shape At.
As shown in FIG. 2 and 3, silicon substrate 20 is provided in optical detection device 1.Silicon substrate 20 is for example by monocrystalline silicon (Si) it is formed.The epitaxial layer 21 formed by silicon is provided on silicon substrate 20.Epitaxial layer 21 is silicon with the upper surface of silicon substrate 20 Epitaxial growth is carried out as starting point and is formed, and conductivity type is p-type.
A part on epitaxial layer 21 is provided with such as LOCOS (Local Oxidation of Silicon, the office of silicon Portion's oxidation) film, STI (Shallow Trench Isolation, shallow trench isolation) or DTI (Deep Trench Isolation, deep trench isolation) 30.Hereinafter, in order to make interest of clarity, general designation is denoted as " LOCOS film 30 ".From top i.e. from silicon Substrate 20 is observed towards the direction of epitaxial layer 21, and the shape of LOCOS film 30 is clathrate.It is drawn by the LOCOS film 30 of clathrate Each region separated is formed with each SiPM element 11.
In each SiPM element 11, p+ type layer 22 is provided in the top section of epitaxial layer 21.The conduction of p+ type layer 22 Type is p-type, the concentration (hereinafter, also referred to as " impurity concentration ") of the impurity as its carrier, than the impurity in epitaxial layer 21 Concentration is high.The impurity concentration of p+ type layer 22 is, for example, 4.5 × 1016cm-3More than.
N+ type layer 23 is provided on p+ type layer 22.The conductivity type of n+ type layer 23 is N-shaped.N+ type layer 23 connects with p+ type layer 22 Touching, forms p/n boundary 24.The impurity concentration of n+ type layer 23 is, for example, 1 × 1018cm-3More than.Pass through p+ type layer 22 and n+ type Layer 23 forms diode 25.Viewed from above, the outer rim of n+ type layer 23 is located at the outside of the outer rim of p+ type layer 22.P+ type layer 22 And n+ type layer 23 is arranged by each SiPM element 11, passes through the p+ type layer 22 and n of LOCOS film 30 and adjacent SiPM element 11 + type layer 23 separates.
Also, the region for just descending region comprising LOCOS film 30 in epitaxial layer 21 is provided with peripheral p+ type layer 26. Viewed from above, the shape of peripheral p+ type layer 26 is identical as a LOCOS film 30 or big circle (in the horizontal direction of Fig. 3 enterprising one Step extend) clathrate.The conductivity type of peripheral p+ type layer 26 is p-type, and impurity concentration is higher than the impurity concentration in epitaxial layer 21. For example, the impurity concentration in periphery p+ type layer 26 is 10 times or more of the impurity concentration of epitaxial layer 21.For example, in epitaxial layer 21 Impurity concentration is 1 × 1013~1 × 1016cm-3, for example, being 3 × 1015cm-3Below.The impurity concentration of peripheral p+ type layer 26 is 1 ×1015cm-3More than.
The peripheral configuration of p+ type layer 26 separates between p+ type layer 22 and silicon substrate 20 with p+ type layer 22.Epitaxial layer 21 Part 21a is present between peripheral p+ type layer 26 and p+ type layer 22.Due to impurity from peripheral p+ type layer 26 and p+ type layer 22 to Part 21a diffusion, therefore the impurity concentration of part 21a is higher than the mean impurity concentration of epitaxial layer 21 but than peripheral p+ type layer 26 The half of impurity concentration is low.In addition, viewed from above, the peripheral encirclement of p+ type layer 26 p+ type layer 22, but periphery p+ type layer 26 It end can also be Chong Die with the end of p+ type layer 22.The width of the part of overlapping is, for example, 0~1 μm.In addition, in peripheral p+ type layer In the case that 26 surround p+ type layer 22, their interval is, for example, 0~1 μm.
Electrode film 31 is provided on the lower surface of silicon substrate 20.Electrode film 31 is for example formed by metal material.Electrode film 31 upper surface and the following table face contact of silicon substrate 20.Therefore, electrode film 31 is connected to epitaxial layer 21 via silicon substrate 20.
Electrode film 32 is provided on the upper surface of epitaxial layer 21.Electrode film 32 is for example by ITO (Indium-Tin- Oxide: tin-doped indium oxide) etc. conductive clears material formed.The lower surface of electrode film 32 is contacted with the upper surface of epitaxial layer 21. Therefore, electrode film 32 is partially attached to n+ type layer 23 via the top layer of epitaxial layer 21.Electrode film 32 is patterned to predetermined shape. In addition, as shown in figure 4, being provided with the resistive element 33 being for example formed by polysilicon on LOCOS film 30.Resistive element 33 connects In electrode film 32.
As a result, as shown in figure 4, in optical detection device 1, it has been connected in parallel between electrode film 31 and electrode film 32 more A SiPM element 11.In each SiPM element 11, it is connected in series diode 25 and resistive element 33.
Then, the work of optical detection device of the present embodiment is illustrated.
Fig. 5 is the figure for indicating the work of optical detection device of the present embodiment.
Fig. 6 is the figure for indicating the effective coverage of optical detection device of the present embodiment.
Fig. 7 is that horizontal axis is the impurity concentration of peripheral p+ type layer, the expression periphery p+ type layer that the longitudinal axis is light detection efficiency (PDE) The impurity concentration curve graph of influence that light detection efficiency is generated.
As shown in figs.5 and 6, become cathode, electrode film to application electrode film 31 between electrode film 31 and electrode film 32 32 become voltage as anode.Depletion layer 40 is that starting point is extended to upper and lower with p/n boundary 24 as a result,.Depletion layer 40 reaches n+ type In layer 23 and in epitaxial layer 21.The capacitor parasitics for clipping depletion layer 40 are formed as a result, store charge.
As shown in the arrow 41 of Fig. 5, in this state to the photon p of certain 11 incident infrared of SiPM element.As a result, such as arrow Shown in first 42, h+ pairs of electronics e- and hole are generated in epitaxial layer 21.There are this to be located at the feelings in depletion layer 40 to position is generated Condition, there is also situations about being located at outside depletion layer 40.The electronics e- in h+ pairs of electronics e- and hole generated in depletion layer 40, such as Shown in arrow 43, by the electric field formed by electrode film 31 and electrode film 32, advances towards electrode film 32, reach p/n boundary 24. On the other hand, the electronics e- in h+ pairs of electronics e- and hole generated outside depletion layer 40 is moved to depletion layer 40 by diffusion It is interior, it is mobile by electric field later, reach p/n boundary 24.Avalanche breakdown occurs in p/n boundary 24 as a result, diode 25 becomes conducting State, as shown in arrow 44, the charge for being stored in capacitor parasitics are connected between electrode film 31 and electrode film 32.Due to charge Flowing, generates voltage decline in resistive element 33, and diode 25 again returns to nonconducting state.It is flowed at this time by detection Electric current, to detect the incidence of photon p.
Each SiPM element 11 and 1 photon p reacts and flows avalanche current, therefore is able to detect 1 photon p. Once the SiPM element 11 for flowing through avalanche current can be substantially available before recharging, but to the SiPM element 11 of surrounding It does not have an impact.Due to being provided with multiple such as 48 SiPM elements 11 in optical detection device 1, can examine to one-time continuous Survey multiple photons.
Further, since each SiPM element 11 can not detect the incident angle of infrared ray, therefore optical detection device 1 does not have itself Spatial resolution.But such as by making multiple optical detection devices 1 be arranged in 1 column, and optical system appropriate is set, can Realize one-dimensional spatial resolution.In addition, can be realized by utilizing scanning optics (not shown) scanned infrared line laser Two-dimensional spatial resolution.Further, by measuring from making infrared laser oscillation play time difference until being detected, energy It is enough to realize three-dimensional spatial resolution.In addition, realizing two-dimensional space point and arranging multiple optical detection devices 1 two-dimensionally Resolution, and the time difference is measured, it also can be realized three-dimensional spatial resolution.
Also, as shown in fig. 6, due to being provided with peripheral p+ type layer 26 in optical detection device 1 of the present embodiment, Therefore the effective coverage 45 that photon p can be captured is big.Effective coverage 45 refer to photon p and silicon atom collision and generate electronics e- and The position in h+ pairs of hole and generated electronics e- reach p/n boundary 24 and the set of the position that generates avalanche breakdown.In effective district Even if the outside photon p in domain 45 generates electronics e- and h+ pairs of hole, generated electronics e- do not reach p/n boundary 24 yet, therefore Avalanche breakdown does not occur, photon p is not detected.Therefore, effective coverage 45 is bigger in each SiPM element 11, then PDE (light inspection Survey efficiency) it is higher.
As the reasons why effective coverage 45 can become larger and being provided with peripheral p+ type layer 26, it may be considered that reason below By.
First, since peripheral p+ type layer 26 becomes potential barrier for electronics e-, electronics e- can be in peripheral p+ type layer 26 Repeatedly flowing can be easier to reach the p/n boundary 24 that avalanche breakdown occurs.
Second, since peripheral p+ type layer 26 inhibits the extension of depletion layer 40, region, i.e. is just descended in LOCOS film 30 The outer part of SiPM element 11, depletion layer 40 can it is smaller, electronics e- via 40 break-through of depletion layer to SiPM element 11 outer part Probability reduce.
Third is generated due to the concentration difference in epitaxial layer 21 and the hole of periphery p+ type layer 26 from 21 court of epitaxial layer The electric field of p+ type layer 26 to the periphery, therefore extended outward by the power line of p/n boundary 24.Since electronics e- is along power line Flowing, if therefore extended outward by the power line of p/n boundary 24, in the electrons that the outer part of SiPM element 11 generates More easily reach p/n boundary 24.
In addition, in the present embodiment, the impurity concentration of the impurity concentration epitaxial layer 21 due to making peripheral p+ type layer 26 10 times or more, therefore said effect can be reliably obtained.
As shown in fig. 7, simulation as a result, in the impurity concentration 1 × 10 for making epitaxial layer 2114cm-3When, if periphery p+ type The impurity concentration of layer 26 is 1 × 1015cm-310 times or more of the above i.e. impurity concentration of epitaxial layer 21, then light detection efficiency can be shown Land raising.
Then, the effect of present embodiment is illustrated.
According to the present embodiment, by the peripheral part in SiPM element 11, periphery p+ type layer is set in epitaxial layer 21 26, thus, it is possible to expand the effective coverage 45 that can capture photon p, light detection efficiency can be made to improve.Especially, it is seen from top It examines, the end of the end of peripheral p+ type layer 26 p+ type layer 26 Chong Die or peripheral with the end of p+ type layer 22 is close to p+ type layer 22 End, thus, it is possible to efficiently induce electronics to p/n boundary 24.As a result, the light detection of each SiPM element 11 is high-efficient, therefore It can be realized the high-efficient optical detection device of whole light detection.
In addition, making outside and silicon atom of a part of photon p in depletion layer 40 in the extended distance for shortening depletion layer 40 In the case where being collided and generating h+ pairs of electronics e- and hole, electronics e- is moved by being diffused in epitaxial layer 21.In the feelings Under condition, become gently by the effect that peripheral p+ type layer 26 changes the flowing of electronics, control can be more easier.
(variation of the 1st embodiment)
Then, the variation of the 1st embodiment is illustrated.
Fig. 8 is the sectional view for the optical detection device for indicating that this variation is related to.
As shown in figure 8, peripheral p+ type layer 26 is located at and p+ type layer 22 in optical detection device 1a of the present embodiment Roughly the same depth.Peripheral p+ type layer 26 is separated with p+ type layer 22.The impurity concentration of peripheral p+ type layer 26 is epitaxial layer 21 10 times or more of impurity concentration.
According to this modification, in the same manner as the 1st embodiment above-mentioned (referring to Fig. 6), can expand can capture photon p's Effective coverage 45 can be such that light detection efficiency improves.
Composition other than the above, work and effect in this variation, it is same as the 1st embodiment above-mentioned.
(comparative example)
Then, comparative example is illustrated.
Fig. 9 is the sectional view for the optical detection device for indicating that this comparative example is related to.
As shown in figure 9, being not provided with peripheral 26 (reference figure of p+ type layer in the optical detection device 101 that this comparative example is related to 3).Therefore, effective coverage 45 is smaller, light detection low efficiency.It is considered that the reason is that: since depletion layer 40 is than SiPM element 11 central portion stretches downwards by outer part, thus generate flowed as electronics is attracted by the depletion layer 40 and to Periphery flowing.In addition, the shape of Fig. 6 and effective coverage shown in Fig. 9 45 and depletion layer 40, by describing analog result It obtains.It is also the same about aftermentioned figure.
(the 2nd embodiment)
Then, the 2nd embodiment is illustrated.
Figure 10 is the sectional view for indicating optical detection device of the present embodiment.
As shown in Figure 10, optical detection device 2 of the present embodiment and light detection of the first embodiment above-mentioned Device 1 (referring to Fig. 3) is compared, different on the point that substitution periphery p+ type layer 26 is provided with peripheral insulating layers 27.Periphery Insulating layer 27 is for example formed by Si oxide (SiO), shape viewed from above be with LOCOS film 30 it is same or it is big one circle lattice Sub- shape.In addition, peripheral insulating layers 27 are configured at than LOCOS film 30 and p+ type layer 22 on the lower, with LOCOS film 30 and p+ type Layer 22 separates.
It in the present embodiment, also can be by preventing the movement of electronics by peripheral insulating layers 27 and interfering depletion layer 40 The extension of (referring to Fig. 5), to expand effective coverage 45.As a result, the light detection of optical detection device 2 is high-efficient.
Structure other than the above, work and effect in present embodiment is same as the 1st embodiment above-mentioned.
(the 3rd embodiment)
Then, the 3rd embodiment is illustrated.
Figure 11 is the sectional view for indicating optical detection device of the present embodiment.
As shown in figure 11, and above-mentioned of the second embodiment in optical detection device 3 of the present embodiment Optical detection device 2 (referring to Fig.1 0) is compared, and substitution LOCOS film 30 and peripheral insulating layers 27 are provided with peripheral insulative It is different on the point of component 28.
Peripheral insulative component 28 is for example formed by Si oxide.Viewed from above, the shape of peripheral insulative component 28 is lattice Sub- shape is formed with SiPM element 11 in the region surrounded by peripheral insulative component 28.Peripheral insulative component 28 and p+ type layer 22 divides It separates.The end for being configured at the part than p+ type layer 22 on the lower in peripheral insulative component 28, viewed from above and p+ type layer 22 end overlapping.The upper surface 28a of peripheral insulative component 28 is located at, lower surface 28b more against the top than the upper surface of epitaxial layer 21 With more towards the inside of SiPM element 11, that is, p+ type layer 22 central portion just to descend region to become higher mode obliquely upward It is prominent.
According to the present embodiment, since the lower surface 28b of peripheral insulative component 28 is more towards the inside of SiPM element 11 The mode for becoming higher tilts, therefore can be towards the flowing of 24 photoinduced electron of p/n boundary.Effective coverage 45 is further expanded as a result, Greatly, light detection efficiency further increases.
Structure other than the above, work and effect in present embodiment is same as the 2nd embodiment above-mentioned.
(the 4th embodiment)
Then, the 4th embodiment is illustrated.
Figure 12 is the sectional view for indicating optical detection device of the present embodiment.
As shown in figure 12, optical detection device 4 of the present embodiment and light detection of the first embodiment above-mentioned Device 1 (referring to Fig. 3) is compared, different on the point that substitution periphery p+ type layer 26 is provided with peripheral conductive layer 29.Periphery Conductive layer 29 is formed by conductive material such as metal material such as aluminium (Al), and shape viewed from above is and 30 phase of LOCOS film The clathrate of a same or big circle.In addition, peripheral conductive layer 29 be configured at than LOCOS film 30 and p+ type layer 22 on the lower, with LOCOS film 30 and p+ type layer 22 separate.Peripheral conductive layer 29 is floating potential (floating potential).
In the present embodiment, peripheral conductive layer 29 is in addition to preventing the movement of electronics and interfering depletion layer 40 (referring to figure 5) except extension, peripheral conductive layer 29 also attracts power line, and thus, it is possible to expand effective coverage 45.As a result it can make light detection The light detection efficiency of device 4 improves.
Structure other than the above, work and effect in present embodiment is same as the 1st embodiment above-mentioned.
(the 5th embodiment)
Then, the 5th embodiment is illustrated.
Figure 13 is the sectional view for indicating optical detection device of the present embodiment.
As shown in figure 13, optical detection device 5 of the present embodiment and light detection of the first embodiment above-mentioned Device 1 (referring to Fig. 3) is compared, on the point of not set periphery p+ type layer 26 and viewed from above in p+ type layer 22 Centre portion is formed on the point of hole 22a different.Hole 22a penetrates through p+ type layer 22 in the up-down direction.The part 21b of epitaxial layer 21 enters In the 22a of hole.Since impurity is spread from p+ type layer 22 to part 21b, impurity concentration being averaged than epitaxial layer 21 of part 21b Impurity concentration is high, but lower than the impurity concentration of p+ type layer 22.
In the present embodiment, hole 22a is formed by the central portion in p+ type layer 22, it can be in the center of SiPM element 11 Portion extends depletion layer 40 larger downwards.Thus electrons are easier to reach p/n boundary 24 via depletion layer 40.As a result light Detection efficiency improves.
Structure other than the above, work and effect in present embodiment is same as the 1st embodiment above-mentioned.
In addition, not forming hole 22a in p+ type layer 22, drop impurity concentration slightly near the central portion of p+ type layer 22 It is low, also said effect can be obtained in certain degree.
In addition, present embodiment can also be combined to implement with above-mentioned each embodiment.For example, it is also possible in p+ Type layer 22 forms hole 22a, and peripheral p+ type layer 26 (referring to Fig. 3, Fig. 8) is arranged as the 1st embodiment or its variation, Peripheral insulating layers 27 (referring to Fig.1 0) can also be set as the 2nd embodiment, can also be arranged as the 3rd embodiment Peripheral conductive layer 29 (referring to Fig.1 2) can also be arranged in peripheral insulative component 28 (referring to Fig.1 1) as the 4th embodiment.
In addition, the conductivity type of each section can also be made opposite in above-mentioned each embodiment.In this case, hole As the carrier for causing avalanche breakdown.But using electronics as high-efficient in the case where carrier.
Embodiment from the description above can be realized the more efficient optical detection device of light detection.In addition, according to by The scanning optics of the laser oscillator, scanned infrared line laser that vibrate infrared laser detects after object reflection Infrared ray the optical detection device illustrated in the respective embodiments described above and the compositions such as control circuit light detection ranging dress It sets, can more precisely identify the shape and/or distance positioned at remote object.
More than, several embodiments of the invention are described, but these embodiments are all to prompt as an example , it is no intended to limit the range of invention.These new embodiments can be implemented with various other ways, not depart from invention Various omissions, displacement, change are able to carry out in the range of purport.These embodiments and/or its deformation, are contained in the model of invention It encloses and/or purport, and is contained in the range of invention and its equivalent documented by claims.In addition, aforementioned implementation Mode also can mutually be combined to implement.

Claims (12)

1. a kind of optical detection device, has:
Silicon layer is set in the 1st main surface of semiconductor substrate, is the 1st conductivity type；
1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；
2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；
3rd semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer, It is separated with the 1st semiconductor layer；
It is connected to the 1st electrode of the silicon layer；And
It is connected to the 2nd electrode of the 2nd semiconductor layer.
2. optical detection device according to claim 1,
3rd semiconductor layer is upper in the direction vertical with the boundary face of the p/n boundary compared with the 1st semiconductor layer In lower section.
3. optical detection device according to claim 2,
In the case where being overlooked on the direction vertical with the boundary face of the p/n boundary, one of the 3rd semiconductor layer Divide Chong Die with a part of the 1st semiconductor layer.
4. optical detection device according to claim 1,
A part of 3rd semiconductor layer on the direction vertical with the boundary face of the p/n boundary with the 1st semiconductor A part overlapping of layer.
5. optical detection device according to claim 1,
In the case where being overlooked on the direction vertical with the boundary face of the p/n boundary, the 3rd semiconductor layer surrounds institute State the 1st semiconductor layer.
6. optical detection device according to claim 1,
The impurity concentration of 3rd semiconductor layer is at least 10 times or more of the impurity concentration of the silicon layer.
7. a kind of optical detection device, has:
The silicon layer of 1st conductivity type；
1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；
2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；
Insulating layer is set in the silicon layer, is separated with the 1st semiconductor layer；
It is connected to the 1st electrode of the silicon layer；And
It is connected to the 2nd electrode of the 2nd semiconductor layer.
8. optical detection device according to claim 7,
The lower surface of the insulating layer more just descends region more prominent towards the central portion of the 1st semiconductor layer Out.
9. a kind of optical detection device, has:
The silicon layer of 1st conductivity type；
1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；
2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；
Conductive layer is set in the silicon layer, is separated with the 1st semiconductor layer；
It is connected to the 1st electrode of the silicon layer；And
It is connected to the 2nd electrode of the 2nd semiconductor layer.
10. a kind of optical detection device, has:
The silicon layer of 1st conductivity type；
1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；
2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；
It is connected to the 1st electrode of the silicon layer；And
It is connected to the 2nd electrode of the 2nd semiconductor layer,
It is formed in the 1st semiconductor layer and penetrates through the described 1st half on the direction vertical with the boundary face of the p/n boundary and lead The hole of body layer.
11. a kind of optical detection device, has:
The silicon layer of 1st conductivity type；
1st semiconductor layer is set in the silicon layer, is the 1st conductivity type, and impurity concentration is higher than the impurity concentration of the silicon layer；
2nd semiconductor layer is set on the 1st semiconductor layer, is the 2nd conductivity type, forms the side pn with the 1st semiconductor layer Boundary；
It is connected to the 1st electrode of the silicon layer；And
It is connected to the 2nd electrode of the 2nd semiconductor layer,
The impurity concentration of the central portion of 1st semiconductor layer is than the portion in the 1st semiconductor layer in addition to the central portion The impurity concentration divided is low.
12. a kind of light detection range unit, has:
Optical detection device described in claim 1；
The laser oscillator for vibrating infrared laser；And
Scanning means scans the infrared laser, the irradiation of Xiang Suoshu optical detection device.
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