CN110278650A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN110278650A
CN110278650A CN201910188057.1A CN201910188057A CN110278650A CN 110278650 A CN110278650 A CN 110278650A CN 201910188057 A CN201910188057 A CN 201910188057A CN 110278650 A CN110278650 A CN 110278650A
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CN
China
Prior art keywords
electrode portion
workpiece
processing apparatus
plasma processing
dielectric
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CN201910188057.1A
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Chinese (zh)
Inventor
高桥大辅
塚本千里
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Nidec Corp
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Nidec Corp
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Priority claimed from JP2018045782A external-priority patent/JP2019160565A/en
Priority claimed from JP2018045779A external-priority patent/JP2019160564A/en
Priority claimed from JP2018045773A external-priority patent/JP2019160562A/en
Application filed by Nidec Corp filed Critical Nidec Corp
Publication of CN110278650A publication Critical patent/CN110278650A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention provides plasma processing apparatus.The plasma processing apparatus includes application electrode portion, is applied defined voltage；And dielectric, it is configured between the workpiece of ground connection and the application electrode portion, in the internal gases route for having and flowing for processing gas, the gap between the gases route and the dielectric and the workpiece is connected to the electrode portion that applies.

Description

Plasma processing apparatus
Technical field
The present invention relates to plasma processing apparatus.
Background technique
In the past, the inside of closed container is depressurized and generates plasma, to work of the configuration in the closed container The technology that part carries out corona treatment is widely used.But in recent years, establish steadily carry out under atmospheric pressure etc. from The technology of daughter electric discharge, enables the corona treatment functionization in open space.It does not need to bear the secured of decompression as a result, Closed container, to realize cheap plasma processing apparatus.
As the representative method of plasma processing for steadily carrying out plasma discharge under atmospheric pressure, exist The high voltage of high frequency is set to be applied to the dielectric barrier discharge mode of metal electrode across dielectric between metal electrode.In we In formula, can general 1mm or less left and right relatively narrow spatial joint clearance in realize atmospheric pressure under stable discharging, in addition to can benefit Except being discharged with rare gas such as helium (He), additionally it is possible to be carried out using the more inexpensive gas such as air or nitrogen Electric discharge.An example of the plasma processing apparatus of dielectric barrier discharge mode is utilized at Japanese Unexamined Patent Publication 2014-220056 It is disclosed in bulletin, Japanese Unexamined Patent Publication 2005-71758 bulletin and Japanese Unexamined Patent Publication 2003-249399 bulletin.
However, to also can steadily carry out plasma under atmospheric pressure in above-mentioned dielectric barrier discharge mode Electric discharge needs to become between high voltage is applied electrode " on "/"off" under high voltage applies, therefore exists and be easy to make electricity The project of the deterioration development of pole.In addition, to also can under atmospheric pressure steadily in above-mentioned dielectric barrier discharge mode Plasma discharge is carried out, is needed between high voltage is applied electrode, under the influence of the heat of generation, metal electrode and dielectric have There is Temperature Distribution.The thermal expansion coefficient of metal is more contour than constituting dielectric ceramics.In Japanese Unexamined Patent Publication 2014-220056 bulletin Structure in, depositing in the case of temperature rise, solid dielectric hardly deforms, but metal electrode is radially expanded.By This, metal electrode is possible to oppress solid dielectric from inside, leads to solid dielectric deformation etc..
In addition, in the plasma of Japanese Unexamined Patent Publication 2005-71758 bulletin and Japanese Unexamined Patent Publication 2003-249399 bulletin In processing unit, using in such a way that dielectric covers a pair of electrodes both sides, but dielectric is usually the high prices such as ceramics Component, therefore installation cost is got higher.
Therefore, in the past sometimes in the following way: only covering the grounding electrode by being grounded with dielectric and be applied high electricity The application electrode of pressure applied in a pair of electrodes that electrode is constituted.In this case, so that workpiece (handled object) and ground connection electricity The mode of pole contact is configured.However, in this approach, the following topics exist: if leading in workpiece and grounding electrode Lead to insufficient state, then generate potential difference between workpiece and grounding electrode, and generates paradoxical discharge.If generating abnormal put Electricity, it is likely that unwanted surface treatment can have been carried out to workpiece.
Summary of the invention
The present invention in view of the foregoing, it is intended that provide can carried out in a manner of dielectric barrier discharge every time When plasma discharge, inhibit the plasma processing apparatus of the deterioration of electrode.
In addition, the object of the present invention is to provide can carry out plasma in a manner of dielectric barrier discharge every time When electric discharge, dielectric plasma processing apparatus is protected.
In addition, the object of the present invention is to provide be able to suppress at the plasma of the generation to the paradoxical discharge of workpiece Manage device.
The plasma processing apparatus of illustration of the invention uses such as flowering structure: the plasma processing apparatus, which includes, to be applied Add electrode portion, is applied defined voltage；And dielectric, be configured at ground connection workpiece and the application electrode portion it Between, the electrode portion that applies is in the internal gases route for having and flowing for processing gas, the gases route and the electricity Gap connection between medium and the workpiece.
In addition, the plasma processing apparatus of illustration of the invention uses such as flowering structure: plasma processing apparatus tool Have: applying electrode portion, axially extend, be applied defined voltage；And dielectric, it axially extends, the electricity is situated between Matter has the hollow portion axially extended, and in the hollow portion, the application electrode portion has for the application electrode portion configuration Absorb the deformation absorption portion of the radial deformation as caused by heat.
In addition, the plasma processing apparatus of illustration of the invention uses such as flowering structure: plasma processing apparatus tool Have: maintaining part has the grounding electrode portion of ground connection, keeps to workpiece；Apply electrode portion, is applied defined electricity Pressure；And exhaust portion, the gas in the inner space of the maintaining part is discharged, the grounding electrode portion includes setting face, It contacts and is arranged for the workpiece；And adsorption hole, it is penetrated through from the setting towards the inner space.
The plasma processing apparatus of illustration according to the present invention can carried out in a manner of dielectric barrier discharge every time When plasma discharge, inhibit the deterioration of electrode.
In addition, the plasma processing apparatus of illustration according to the present invention, it can be every time with dielectric barrier discharge side When formula carries out plasma discharge, dielectric is protected.
In addition, the plasma processing apparatus of illustration according to the present invention, is able to suppress the production to the paradoxical discharge of workpiece It is raw.
By the detailed description of the preferred embodiment for the present invention below, can be more clearly understood that referring to attached drawing of the invention Above-mentioned and other feature, element, step, features and advantages.
Detailed description of the invention
Fig. 1 is the longitudinal section view for showing the structure of plasma processing apparatus of the 1st embodiment.
Fig. 2 is the curve that the relationship of discharging gap and discharge ionization voltage is indicated with the presence or absence of gas stream of processing gas Figure.
Fig. 3 is the integrally-built figure for diagrammatically showing the plasma processing apparatus of the 2nd embodiment.
Fig. 4 is the longitudinal section view for showing structure relevant to the maintaining part of the 2nd embodiment and application electrode portion.
Fig. 5 is the perspective view of an example of workpiece.
Fig. 6 A is the top view for applying one embodiment of electrode portion along end on observation.
Fig. 6 B is the top view along end on observation for showing the application electrode portion of the 1st variation.
Fig. 6 C is the top view along end on observation for showing the application electrode portion of the 2nd variation.
Fig. 7 is the top view along end on observation for showing the application electrode portion of the 3rd variation.
Fig. 8 is the longitudinal section view for showing structure relevant to the maintaining part of the 3rd embodiment and application electrode portion.
Fig. 9 is the longitudinal section view for showing structure relevant to the maintaining part of variation and application electrode portion.
Figure 10 is the integrally-built figure for diagrammatically showing the plasma processing apparatus of the 4th embodiment.
Figure 11 is the longitudinal section view for showing a part of structure of plasma processing apparatus of the 4th embodiment.
Figure 12 is the longitudinal section view for showing a part of structure of plasma processing apparatus of the 5th embodiment.
Figure 13 is the perspective view for showing an example of workpiece.
Figure 14 A is the top view for showing an example of configuration of adsorption hole.
Figure 14 B is the top view for showing other an example of configuration of adsorption hole.
Figure 15 is the longitudinal section view for showing a part of structure of plasma processing apparatus of the 6th embodiment.
Figure 16 is shown workpiece setting in the longitudinal section view of the state of the plasma processing apparatus of the 6th embodiment.
Figure 17 is the vertical profile view for a part of structure of the plasma processing apparatus of variation for showing the 6th embodiment Figure.
Figure 18 be show by workpiece setting in the plasma processing apparatus of the variation of the 6th embodiment state it is vertical Cross-sectional view.
Figure 19 is the longitudinal section view for showing a part of structure of plasma processing apparatus of the 7th embodiment.
Specific embodiment
Hereinafter, being illustrated referring to attached drawing to embodiment illustrated of the invention.In addition, hereinafter, by central axis The extending direction of C1, C2 are referred to as " axial direction ", and the axial side X1 is set as " upside ", and the axial side X2 is set as " downside ".In addition, " circumferential direction " will be referred to as around the direction of central axis, the radial direction of central axis is referred to as " radial direction ".
The 1st embodiment > of <
Fig. 1 is the longitudinal section view for showing the structure of plasma processing apparatus 5 of the 1st embodiment.Corona treatment Device 5 generates plasma under atmospheric pressure, to carry out at plasma to the metal workpiece 4 as treated object Reason.
Plasma processing apparatus 5, which has, applies electrode portion 1, dielectric 2 and high-voltage power supply portion 3.Apply electrode portion 1 With the cylindrical shape axially extended centered on central axis C1.Applying electrode portion 1 is metal electrode, such as by SUS material Material is formed.
Apply the gases route 1A that electrode portion 1 has the hollow portion for being equivalent to cylindrical shape.Gases route 1A is from upper End to lower end is through application electrode portion 1 and axially extends.So that processing gas is sent into gases route 1A from upper end, is admitted to Processing gas flowed downwards inside gases route 1A.It is flowed that is, applying electrode portion 1 and having in inside for processing gas Gases route 1A.In addition, the flowing of processing gas as gas stream F1 and is shown in Fig. 1.
Dielectric 2 is contiguously configured with the lower end for applying electrode portion 1, and has annular shape.It is configured in the lower section of dielectric 2 There is workpiece 4.That is, the configuration of dielectric 2 is in workpiece 4 and applies between electrode portion 1.It is preferable to use aluminium oxide, oxygen for the material of dielectric 2 Change the ceramic materials or free-cutting ceramics etc. such as zirconium.Dielectric 2 has the gas flow path 2A for being equivalent to circular hollow portion.Gas Body flow path 2A is connected to gases route 1A.
Dielectric 2 and workpiece 4 are opposed in the up-down direction across gap S1.Gap S1 is circular space, with gas Flow path 2A connection.That is, gases route 1A is connected to via the gap S1 between gas flow path 2A and dielectric 2 and workpiece 4.
Workpiece 4 is for example with cylindric.Metal workpiece 4 is grounded.Workpiece 4 can directly be applied earthing potential, It can be and be applied earthing potential and being maintained on the metal workpiece holding frame for be applied earthing potential.
The high voltage of high frequency is applied to by high-voltage power supply portion 3 applies electrode portion 1.That is, being applied on applying electrode portion 1 Alternating voltage.The frequency for the voltage that high-voltage power supply portion 3 is applied is, for example, 1kHZ~100kHz.High-voltage power supply portion 3 is applied The waveform of the voltage added is preferably impulse waveform, in addition to this, is also possible to sine wave, rectangular wave etc., as long as using in atmosphere The well known waveform used under pressure plasma discharge.In addition, in the present embodiment, it can be as aftermentioned by high electricity The voltage that voltage source portion 3 is applied inhibits lower.
In the inside of the application electrode portion 1 for the high voltage for being applied high frequency by high-voltage power supply portion 3, led when from upper direction gas When logical portion 1A is sent into processing gas, the processing gas of feeding flows downwards inside gases route 1A, and is flowed into gas Flow path 2A.The processing gas flowed downwards inside gas flow path 2A is flowed into from radially inner side to gap S1, in the S1 of gap It is flowed to radial outside in portion.Processing gas is, for example, nitrogen or is mixed with the gas etc. after air in nitrogen, does not limit especially Determine type.
At this point, due to by being applied high voltage application electrode portion 1 and ground connection workpiece 4 clamp in the up-down direction between Gap S1 and dielectric 2, therefore plasma discharge is generated in the S1 of gap by dielectric barrier discharge mode.As a result, In gap S1 generate plasma P 1, can using generation plasma P 1 reactive species to the upper surface of workpiece 4 at Reason.
Here, Fig. 2 is that with (solid line) the case where the not gas stream of processing gas and have the case where gas stream (dotted line) Come show discharging gap G and discharge ionization voltage Vs relationship curve.Discharging gap G is between dielectric 2 and workpiece 4 The distance of up and down direction, the i.e. axial distance of gap S1.Discharge ionization voltage Vs is the voltage for starting electric discharge in the S1 of gap.
Independent of whether there is or not gas streams, discharging gap G is bigger, then discharge ionization voltage Vs is higher.Also, compared to not having The case where gas stream, there is the discharge ionization voltage Vs of the case where gas stream entirety to decline.This is thought of as following reason: handling Gas flows into before the S1 of gap, and processing gas passes through in the gases route 1A for the application electrode portion 1 for being applied high voltage Portion, therefore the unexpected electronics for facilitating plasma generation is generated in gases route 1A.
In Fig. 2, for example, discharging gap G be 0.5mm~1mm range and do not have gas stream in the case where, electric discharge is opened Beginning voltage Vs be 8kV or more and 12kV hereinafter, but with gas stream, discharge ionization voltage Vs be 7kV or more and 10kV the following value.In this way, can reduce the voltage for being applied to and applying electrode portion 1, therefore by reducing discharge ionization voltage Vs It is able to suppress and applies the deterioration of electrode portion 1.
In other words, the plasma processing apparatus 5 of the 1st embodiment, which includes, applies electrode portion 1, is applied defined Voltage；Dielectric 2 is configured at the workpiece 4 of ground connection and applies between electrode portion 1, and applying electrode portion 1 has in inside for processing The gases route 1A of gas flowing, the gap S1 between gases route 1A and dielectric 2 and workpiece 4 are connected to.
The gap S1 between dielectric 2 and workpiece 4 is directed in the processing gas flowed in gases route 1A as a result, In, plasma P 1 is generated using dielectric barrier discharge in the S1 of the gap.Utilize the reactive species of the plasma P 1 of generation 4 surface of workpiece is handled.At this point, processing gas flows in applying the gases route 1A inside electrode portion 1 in advance, because This generates unexpected electronics in processing gas, thus it is speculated that reduces to be applied to the voltage of application electrode portion 1 needed for electric discharge.As a result, It is able to suppress and applies the deterioration of electrode portion 1.
In addition, in the present embodiment, applying electrode portion 1 and axially extending, dielectric 2, which has, is configured at application electrode portion The gas flow path 2A of 1 axial side, gas flow path 2A are connected to the gases route 1A axially extended.
Thereby, it is possible to will radially import in gases route 1A and gas flow path 2A along the processing gas axially flowed Into gap S1.
The 2nd embodiment > of <
Fig. 3 is the integrally-built figure for diagrammatically showing the plasma processing apparatus 25 of the 2nd embodiment.
Plasma processing apparatus 25 shown in Fig. 3 is to generate plasma under atmospheric pressure, thus to as processed The metal workpiece 11 of object carries out the device of corona treatment.More specifically, to be set to workpiece 11 through hole ( It is not shown in Fig. 3) carry out corona treatment.Plasma processing apparatus 25 has maintaining part 12, applies electrode portion 13, high electricity Voltage source portion 14, timer 15, injector 16, air offer portion 17 and flowmeter 18.
Maintaining part 12 keeps workpiece 11.As described later, maintaining part 12 and workpiece 11 are formed together semi-enclosed space. Apply electrode portion 13 to be positioned relative to maintaining part 12, in the state of making workpiece 11 be held in maintaining part 12, becomes application electricity Pole portion 13 is inserted in the state of the inside through holes of workpiece 11.
High-voltage power supply portion 14 applies the high voltage of high frequency to electrode portion 13 is applied.That is, applying exchange in electrode portion 13 Voltage.On the other hand, by applying earthing potential to metal maintaining part 12, thus via maintaining part 12 to metal Workpiece 11 applies earthing potential.Since processing gas is directed into through hole, electric discharge is generated in inside through holes, thus Generate plasma.The specific structure for the voltage that high-voltage power supply portion 14 is applied is identical as the 1st above-mentioned embodiment.
The frequency for the voltage that high-voltage power supply portion 14 is applied is, for example, 1kH~100kHz.High-voltage power supply portion 14 is applied The waveform of the voltage added is preferably impulse waveform, in addition to this, is also possible to sine wave, rectangular wave etc., as long as using in atmosphere The well known waveform used under pressure plasma discharge.In addition, the voltage that high-voltage power supply portion 14 is applied is, for example, 5kVpp~20kVpp is suitably set according to gap applied between electrode portion 13 and through hole etc..
Timer 15 measures high-voltage power supply portion 14 to applying electrode portion 13 and apply the alive time.That is, can The processing time of corona treatment is carried out to workpiece 11 using the control of timer 15.
Injector 16 is the vacuum generator connecting with the exhaust outlet of maintaining part 12.Injector 16 is mentioned by generating from air For the gas stream of the high speed of the air of the offer of portion 17, generated on the direction vertical with the gas stream using Venturi effect negative Pressure.Negative pressure is generated by injector 16, so that the gas in the inner space of maintaining part 12 is discharged.That is, 16 conduct of injector Exhaust portion and function.Alternatively, it is also possible to replacement injector 16 for example, by using vacuum pump.
Flowmeter 18 is configured in the flow path between the exhaust outlet of maintaining part 12 and injector 16.Flowmeter 18 is to above-mentioned The flow of the gas stream flowed in flow path is measured.
Fig. 4 is the longitudinal section view for showing structure relevant to the maintaining part 12 of the 2nd embodiment and application electrode portion 13.Such as Shown in Fig. 4, maintaining part 12 has workpiece holding frame 121 and shell 122.Workpiece holding frame 121 be it is substantially cylindric, have opening Portion 121A.The edge centered on central axis C2 opening portion 121A is formed axially through ground.Workpiece holding frame 121 be it is metal, It is applied earthing potential.
Shell 122 is the cylindrical shape of upper opening, is supported from downside to workpiece holding frame 121.It is kept by workpiece Frame 121 and shell 122 surround and form inner space 12A.That is, maintaining part 12 has inner space 12A.In addition, in shell 122 Side be formed with exhaust outlet 122A.
Apply electrode portion 13 to axially extend centered on central axis C2.Here, Fig. 6 A is to apply electricity along end on observation The top view of the one embodiment in pole portion 13.In this case, applying electrode portion 13 has the cylindrical shape axially extended. It is formed that is, applying electrode portion 13 as metal tubulation.In addition, above-mentioned cylindrical shape is continuous shape in the circumferential.
Apply the gases route 13A that electrode portion 13 has the hollow portion for being equivalent to cylinder.Gases route 13A is along axial direction Extend, from lower end to upper end through application electrode portion 13.In the chimeric air inlet pipe 20 for having tubulose in lower end for applying electrode portion 13. Processing gas is sent to inside gases route 13A by air inlet pipe 20 from below as a result, and the processing gas being admitted to is in gas It is flowed upwards inside body conducting portion 13A.In addition, being shown in Fig. 4 using the flowing of processing gas as gas stream F2.It closes It is identical as the 1st embodiment in the type of processing gas, it is not particularly limited.
In addition, dielectric 19 is shown in FIG. 4.That is, there is the plasma processing apparatus 25 of present embodiment electricity to be situated between Matter 19.Dielectric 19 is axially extended centered on central axis C2.Dielectric 19 is hollow with axially extending in inside Portion 19A.That is, dielectric 19 has the cylindrical shape axially extended.Hollow portion 19A runs through dielectric 19 from lower end to upper end.
Apply electrode portion 13 to be configured in hollow portion 19A.As a result, as shown in Figure 6A, outside in the diameter for applying electrode portion 13 Side is configured with dielectric 19.In addition, the material of dielectric 19 is identical as the 1st embodiment.
In addition, Fig. 4 is the figure for showing the state that workpiece 11 is set to maintaining part 12.In this state, by 11 He of workpiece Maintaining part 12 forms semi-enclosed space.Fig. 5 is the perspective view of workpiece 11.Workpiece 11 includes generally cylindrical matrix 111；Circle Columnar protrusion 112 is located at the lower section of matrix 111；And flange part 113, from the outer peripheral surface upper end of matrix 111 to diameter It protrudes outward, and is formed as cyclic annular.
In addition, workpiece 11 have recess portion 11A, recess portion 11B and along axially through through hole 11C.Columned recess portion The upper end position of 11A is consistent with the upper end position of flange part 113.Lower section and recess portion of the columned recess portion 11B in recess portion 11A 11A is continuously configured.Columned through hole 11C is continuously configured in the lower section of recess portion 11B with recess portion 11B.That is, recess portion 11A, recess portion 11B and through hole 11C are interconnected.
Base portion 111 has circular face, that is, anchor ring 111A in lower end.Radially inner side of the protrusion 112 from anchor ring 111A It protrudes downwards.The top of the upper surface of workpiece holding frame 121 is positioned in by anchor ring 111A, so that workpiece 11 is held in Hold portion 12.At this point, protrusion 112 is chimeric with opening portion 121A.
The inner wall of opening portion 121A axially extended contacts inner wall 121A1 and is configured to and protrusion 112 As outer peripheral surface contact outer peripheral surface 112A contact, prevent workpiece 1 with the movement in axially vertical plane.
Apply electrode portion 13 and dielectric 19 and runs through through hole from the downside of through hole 11C to the upside of through hole 11C 11C.That is, application electrode portion 13 and dielectric 19 exist both with respect to the axial whole and circumferential entirety of the inner wall of through hole 11C It is radially opposed.The gap S2 of cylindrical shape is formed between dielectric 19 and through hole 11C.Gap S2 is via opening portion 121A is connected to inner space 12A.
When using the injector 16 (Fig. 3) that is connect with exhaust outlet 122A by the gas in the 12A of inner space from exhaust outlet For 122A to when the discharge of outside, the inside inner space 12A is negative pressure.In the gases route 13A internal flow for applying electrode portion 13 Processing gas from the upper end of gases route 13A to outside spray.Because of the generation of above-mentioned negative pressure, and generate the place of above-mentioned ejection Process gases is flowed into the gas stream in the S2 of gap.The position more upper than through hole 11C is the extraneous gas side under atmospheric pressure.It produces The raw gas stream for flowing to inner space 12A by gap S2 from extraneous gas side.Using the gas stream, from extraneous gas side to Through hole 11C guides processing gas.In the present embodiment, processing gas is extraneous gas, but if needing also to can use Gas (not shown) provides unit and sprays desired gas above Fig. 4.Such as the cutting of made of metal workpiece is attached in removal In the case where the residues such as oil, it is contemplated to be the gas added after oxygen micro to nitrogen, but do not limit gaseous species in the present invention.
Earthing potential is applied with to metal workpiece holding frame 121, since workpiece 11 is contacted with workpiece holding frame 121, Therefore earthing potential is applied with to metal workpiece 11.On the other hand, apply electrode portion 13 to be applied by high-voltage power supply portion 14 The high voltage of high frequency.The gap of gap S2 is relatively narrow, under atmospheric pressure, electric discharge is generated in the S2 of gap.It is put by dielectric barrier Electricity steadily discharges.Therefore, plasma P 2 is generated in the S2 of gap.Plasma P 2 in the axial whole of gap S2 and It is generated in circumferential entirety.
In this way, since the reactive species of the plasma P 2 generated inside through hole 11C can be utilized directly to through hole The inner wall of 11C is handled, therefore compared to the processing of the device progress using remote mode, can carry out at high speed etc. from Daughter processing.
Such as in the case where forming through hole 11C relative to workpiece 11, corona treatment removal residual can be utilized In the cutting oil of the inner wall of through hole 11C.The wetability of through hole 11C is improved as a result, utilizes bonding so as to improve Adhesive strength of the agent by component relative to through hole 11C when fixed.In addition, the corona treatment for through hole is not limited to It states, such as can be used for forming film in the inner wall of through hole.
In addition, the defined gas that can will be generated and keeping processing gas plasmarized inside through hole 11C (such as nitrogen oxides, ozone etc.) is discharged via inner space 12A and exhaust outlet 122A to outside, thus as defined in inhibiting above-mentioned Leakage of the gas to external gas side.In addition, using the pressure difference of negative pressure and extraneous gas in the 12A of inner space, by workpiece 11 Against and be maintained on workpiece holding frame 121, so as to inhibit workpiece 11 shake.
Especially, if making the gap turn narrow between dielectric 19 and through hole 11C, the sectional area of gap S2 can be made Become smaller, to make the flow velocity high speed of the gas stream by gap S2.Thereby, it is possible to further suppress it is above-mentioned as defined in gas to The leakage of extraneous gas side.In this case, although making gas stream high speed, workpiece 11 is resisted against workpiece as described above On retainer 121, therefore workpiece 11 is inhibited to shake.
Apply electrode portion 13 and dielectric 19 and runs through through hole from the downside of through hole 11C to the upside of through hole 11C 11C.That is, applying two open ends of electrode portion 13 and dielectric 19 than through hole 11C by protruding outward.In addition, perforation It is inside inside the 11C of hole, is outside outside through hole 11C.Thereby, it is possible to make in the two of through hole 11C open ends etc. The generation of gas ions stabilizes.
In addition, applying electrode portion 13 in the state of being applied with earthing potential to workpiece 11, applied by high-voltage power supply portion 14 High voltage.Exposed to contact 11 side of workpiece is made one thereby, it is possible to make to be located at than applying the position in the outer part of electrode portion 13 Earthing potential, so as to improve safety.
In addition, utilizing contact outer peripheral surface 112A and contact inner wall by being arranged workpiece 11 on workpiece holding frame 121 121A1 carry out workpiece 11 relative to workpiece holding frame 121 with the positioning in axially vertical plane.Due to workpiece holding frame 121 are determined in advance with the positional relationship of dielectric 19, therefore the positional relationship of workpiece 11 and dielectric 19 is also by workpiece 11 Setting regulation.The management in the gap between the inner wall of through hole 11C and dielectric 19 becomes easy as a result,.Pass through gap Management, can be such that the corona treatment of the inner wall of through hole 11C homogenizes.In addition, workpiece 11 can be protected relative to workpiece Frame 121 is held to be loaded and unloaded in the axial direction.
In addition, due to being configured with flowmeter 18 on the flow path between exhaust outlet 122A and injector 16, it can be right It is measured from exhaust outlet 122A to the flow of the gas stream of outside discharge.Thereby, it is possible to workpiece 11 to workpiece holding frame 121 Fixed stationary state because being detected extremely caused by pressure difference.
Moreover, especially in the present embodiment, since before processing gas flows to gap S2, processing gas exists in advance It is applied the gases route 13A internal flow of the application electrode portion 13 of high voltage, therefore raw inside gases route 13A At unexpected electronics, the discharge ionization voltage in the S2 of gap is reduced.Therefore, it can reduce the voltage for being applied to and applying electrode portion 13, It is deteriorated so as to inhibit to apply electrode portion 13.
In other words, the plasma processing apparatus 25 of the 2nd embodiment, which includes, applies electrode portion 13, is applied regulation Voltage；And dielectric 19, it is configured at the workpiece 11 of ground connection and applies between electrode portion 13, apply electrode portion 13 in inside Gap with the gases route 13A flowed for processing gas, between gases route 13A and dielectric 19 and workpiece 11 S2 connection.
The gap between dielectric 19 and workpiece 11 is directed into the processing gas of gases route 13A flowing as a result, In S2, in the S2 of the gap, plasma P 2 is generated using dielectric barrier discharge.Utilize the work of the plasma P 2 of generation Property kind handles 11 surface of workpiece.At this point, processing gas is applying the gases route 13A inside electrode portion 13 in advance Flowing, therefore unexpected electronics is generated in processing gas, so that the voltage that required being applied to of electric discharge applies electrode portion 13 reduces. Thereby, it is possible to inhibit to apply the deterioration of electrode portion 13.
It is axially extended in addition, applying electrode portion 13, gases route 13A and dielectric 19, dielectric 19 has edge Axially extending hollow portion 19A, configured with electrode portion 13 is applied in hollow portion 19A, apply electrode portion 13 and dielectric 19 with At least part of the inner wall of hole portion (through hole 11C) possessed by workpiece 11 is opposed radially.
As a result, in the processing gas for applying the gases route 13A flowing inside electrode portion 13 from application electrode portion 13 Axial end portion sprays outward, and imports to the above-mentioned gap S2 outside dielectric 19.Thereby, it is possible to utilize the plasma generated The reactive species of body P2 handle the inner wall of the hole portion of workpiece 11.
In addition, above-mentioned plasma processing apparatus also includes maintaining part 12, workpiece 11 is kept；And exhaust Portion's (injector 16), the gas in the inner space 12A of maintaining part 12 is discharged, and inner space 12A is connected to gap S2.
As a result, by the way that the gas of inner space 12A is discharged using exhaust portion, inner space 12A is negative pressure, can be generated The gas stream processing gas sprayed from application electrode portion 13 being imported into above-mentioned gap S2.In addition, inner space 12A is negative Pressure inhibits workpiece 11 to shake thus, it is possible to which workpiece 11 is resisted against maintaining part 12 using the pressure difference with extraneous gas.
The variation > of < application electrode portion
Then, the various embodiments of the application electrode portion 13 of above-mentioned 2nd embodiment are illustrated.Here, to above-mentioned Fig. 6 A shown in the deformation of embodiment be illustrated.Fig. 6 B be show the 1st variation application electrode portion 131 along axial direction The top view of observation.
Application electrode portion 131 is the cylindrical shape with the notch 131A axially extended.In addition, applying electrode portion Gases route 13A is formed with inside 131.Apply electrode portion 131 due to being not secured to dielectric 19, not by dielectric 19 It constrains and is free to carry out thermal deformation.Material as dielectric 9 is, it is preferable to use the ceramic materials such as aluminium oxide, zirconium oxide Or free-cutting ceramics etc..It is the shape with notch 131A due to applying electrode portion 131, is applying electrode portion 131 When temperature rises, apply electrode portion 131 circumferentially, so that the radial deformation for applying electrode portion 131 is absorbed.That is, notch 131A is functioned as the deformation absorption portion absorbed to the radial deformation as caused by heat.Metal application electrode The thermal expansion coefficient in portion 131 is bigger than dielectric 19, but 19 will not be from inside compressing dielectric by circumferentially and, therefore energy Enough protect dielectric 19.
In addition, applying electrode portion 131 can be for example made up of rounding metal film-making.Thereby, it is possible to be readily formed Apply electrode portion 131.But applies electrode portion 131 and be not limited to the mode formed by piece.
Moreover, especially in this variation, the application electrode portion 131 with notch 131A is incorporated in dielectric 19 Hollow portion 19A in.Under the dielectric barrier discharge carried out under atmospheric pressure, need to apply to application electrode portion 131 higher Voltage, thus apply electrode portion 131 and be easy fever.Cause to apply electrode portion 131 and dielectric due to applying electrode portion 131 and generating heat 19 temperature rises.At this point, the metal thermal expansion coefficient for applying electrode portion 131 is than the dielectric 19 that is made of ceramics etc. Greatly, the deformation of dielectric 19 is smaller.Applying electrode portion 131 has notch 131A, therefore circumferentially, absorbs radial heat Expansion.That is, notch 131A is functioned as the deformation absorption portion absorbed to the radial deformation as caused by heat.Cause This, is able to suppress and applies electrode portion 131 from inside compressing dielectric 19, to inhibit deformation of dielectric 19 etc..
In other words, the plasma processing apparatus of this variation, which includes, applies electrode portion 131, axially extends, is applied Add defined voltage；And dielectric 19, it axially extends, dielectric 19 has the hollow portion 19A axially extended, applies Electrode portion 131 configures in hollow portion 19A, applies electrode portion 131 and has and is absorbed to the radial deformation as caused by heat It deforms absorption portion (notch 131A).
Plasma is being generated using dielectric barrier discharge and is utilizing the reactive species pair of the plasma generated as a result, In the plasma processing apparatus that workpiece is handled, in the case where application electrode portion is generated heat because of the application of voltage, inhibit Application electrode portion is radially deformed because of thermal expansion.Thereby, it is possible to inhibit to apply electrode portion from inside compressing dielectric, thus Realize dielectric protection.Under the dielectric barrier discharge carried out under atmospheric pressure, due to needing to apply ratio to application electrode portion Higher voltage, and make to apply the easy fever of electrode portion, therefore be effective.
In addition, applying electrode portion 131 is following cylindrical shape: having the notch 131A axially extended to inhale as deformation Receipts portion.
As a result, in the case where applying electrode portion fever, due to applying electrode portion circumferentially, it is able to suppress pair Dielectric compressing.
In addition, applying electrode portion 131 is sheet.Thereby, it is possible to be readily formed application electrode portion and rounding piece.
In addition, applying the inner wall of hole portion (through hole) possessed by electrode portion 131 and dielectric 19 and the workpiece 11 of ground connection At least part in face is opposed radially.
As a result, in the gap between dielectric and the inner wall of hole portion, plasma is generated, so as to utilize generation The reactive species of plasma above-mentioned inner wall is handled.Thereby, it is possible to improve the processing speed of hole portion.
In addition, the plasma processing apparatus of the variation also includes maintaining part 12, workpiece 11 is kept；With And exhaust portion 16, the gas in the inner space 12A of maintaining part 12 is discharged, inner space 12A and the inner wall and electricity Gap S2 connection between medium 19.
As a result, by being exhausted using exhaust portion, be capable of forming gas processing gas being imported into above-mentioned gap Stream.In addition, can will be discharged by the gas of plasmarized generation, and by making inner space negative pressure, using with Workpiece is resisted against maintaining part by the pressure difference of extraneous gas, so as to inhibit workpiece to shake.
Fig. 6 C is the top view along end on observation for showing the application electrode portion 132 of the 2nd variation.Apply electrode portion 132 With cylindrical shape.When radially observing, the circumferential direction of the circumferential one end 132A and the piece that form the piece of the cylindrical shape are another One end 132B overlapping.Apply electrode portion 132 in the case of temperature rise as a result, circumferentially.Apply electrode as a result, Portion 132 will not oppress dielectric 19 from interior survey, so as to protect dielectric 19.
In addition, in figure 6 c, applying electrode portion 132 is formed by by 1 circle and of piece winding, but can also be by by piece It winds multi-turn and is formed.
Fig. 7 is the top view along end on observation for showing the application electrode portion 133 of the 3rd variation.Apply electrode portion 133 For with buckling portion 133A from circumferential a part to radially inner side buckling cylindrical shape.When the temperature for applying electrode portion 133 When rising, buckling portion 133A is circumferentially extended and is deformed.Buckling portion 133A is as the deformation absorption portion for absorbing radial deformation as a result, And it functions.
In addition, as another variation, it can also be electric using spiral helicine application is formed as and circumferentially winding Pole portion.In such application electrode portion, when temperature rises, radial deformation is absorbed and circumferentially.
In this way, applying electrode portion (131 etc.) there is the deformation absorbed to radial deformation as caused by heat to absorb Portion (131A etc.).
As a result, apply electrode portion temperature rise in the case where, it is suppressed that apply electrode portion due to thermal expansion radially Deformation.Thereby, it is possible to inhibit to apply electrode portion from inside compressing dielectric, to realize dielectric protection.
In addition, applying electrode portion 131 is following cylindrical shape: having the notch 131A axially extended to inhale as deformation Receipts portion.
As a result, in the case where the temperature for applying electrode portion rises, apply electrode portion circumferentially, therefore be able to suppress To dielectric compressing.
In addition, applying electrode portion 131 is sheet.Thereby, it is possible to be readily formed application electrode portion and rounding piece 131。
The 3rd embodiment > of <
Fig. 8 is the longitudinal section view for showing structure relevant to the maintaining part 12 of the 3rd embodiment and application electrode portion 13.This Embodiment is from the 2nd embodiment the difference lies in that the workpiece for being set to maintaining part 12 is different.In the present embodiment, if The workpiece 110 for being placed in maintaining part 12 has the protrusion 1101 chimeric with opening portion 121A.It is formed in the lower surface of protrusion 1101 Hook hole 110A, hook hole 110A are recessed upwards.That is, hook hole 110A does not run through workpiece 110 along the vertical direction.
In addition, the dielectric 191 of present embodiment includes cylindrical portion 1911, with hollow portion 191A；And it is circular Cover 1912, be configured at the upper end of cylindrical portion 1911.Configured with application electrode portion 13 in hollow portion 191A.Cover 1912 Cover from above the upper surface for applying electrode portion 13.Apply the upper end of the gases route 13A of electrode portion 13 via cover 1912 Opening upwards side expose.
The upper end of the upper end and dielectric 191 that apply electrode portion 13 configures in the 110A of hook hole.Apply electricity as a result, The outer peripheral surface and the cylindrical portion 1911 of dielectric 191 and the circumferential entirety of the inner wall of hook hole 110A in pole portion 13 are right radially It sets, and opposed radially with axial a part.In addition, applying the upper surface of electrode portion 13 and the cover of dielectric 191 1912 is opposed in the up-down direction with the bottom of hook hole 110A.
As a result, from the processing gas that air inlet pipe 20 is sent in gases route 13A in gases route 13A upwards Flowing is sprayed from the outward opening portion of cover 1912.It is shown in fig. 8 using the flowing of processing gas as gas stream F3.This In, by the way that by the gas in the 12A of inner space, from exhaust outlet 122A to external exhaust gas, inner space 12A is negative pressure.Shape as a result, The gas stream being flowed at the processing gas of above-mentioned ejection in the gap S3 between dielectric 191 and hook hole 110A.As a result, Electric discharge is generated in the S3 of gap, generates plasma P 3.It can be using the reactive species of the plasma P 3 generated to hook hole The bottom of 110A and inner wall are handled.That is, the corona treatment object in workpiece is not limited to through hole, it is also possible to not The hole portion of perforation.
The 3rd embodiment in this way also can be realized effect identical with the 2nd embodiment.In addition, in this implementation It, can also be using the structure of the application electrode portion of above-mentioned various modifications example in mode.
In other words, in the 3rd embodiment, apply electrode portion 13, gases route 13A and dielectric 191 along axial direction Extend, dielectric 191 has the hollow portion 191A axially extended, configured with electrode portion 13 is applied in hollow portion 191A, applies Add at least part of the inner wall of hole portion (hook hole 110A) possessed by electrode portion 13 and dielectric 191 and workpiece 110 It is opposed radially.
As a result, in the processing gas for applying the gases route 13A flowing inside electrode portion 13 from application electrode portion 13 Axial end portion sprays outward, and imports into the gap S3 outside dielectric 191.Thereby, it is possible to utilize the plasma generated The reactive species of body P3 handle the inner wall of the hole portion of workpiece 110.
Fig. 9 is application electrode portion 13 in the plasma processing apparatus shown to variation and the relevant knot of maintaining part 12 The longitudinal section view of structure.This variation is with the 2nd embodiment the difference lies in that not set air inlet pipe 15.Even if as Structure, the case where also can be realized with 2 embodiment identical effect.
The 4th embodiment > of <
Figure 10 is the integrally-built figure for diagrammatically showing the plasma processing apparatus 100Z of the 4th embodiment.
Plasma processing apparatus 100Z shown in Fig. 10 is a device which to generate plasma under atmospheric pressure, right Metal workpiece 1Z as handled object carries out corona treatment.Plasma processing apparatus 100Z has maintaining part 2Z, apply electrode portion 3Z, high-voltage power supply portion 4Z, timer 5Z, injector 6Z, air offer portion 7Z and flowmeter 8Z.
Maintaining part 2Z keeps workpiece 1Z.The high voltage of high frequency is applied to application electrode portion by high-voltage power supply portion 4Z 3Z.That is, being applied with alternating voltage in applying electrode portion 3Z.On the other hand, it is grounded by applying to metal maintaining part 2Z Current potential and via maintaining part 2Z to metal workpiece 1Z apply earthing potential.Since processing gas is directed into application electrode portion In gap between 3Z and workpiece 1Z, therefore electric discharge is generated in the gap, to generate plasma.Generation can be utilized Plasma handles the surface of workpiece 1Z.
The frequency for the voltage that high-voltage power supply portion 4Z is applied is, for example, 1kH~100kHz.High-voltage power supply portion 4Z is applied The waveform of the voltage added is preferably impulse waveform, in addition to this, is also possible to sine wave, rectangular wave etc., as long as using in atmosphere The well known waveform used under pressure plasma discharge.In addition, the voltage that high-voltage power supply portion 4Z is applied is, for example, 5kVpp~20kVpp is suitably set according to gap applied between electrode portion 3Z and workpiece 1Z etc..
Timer 5Z measures high-voltage power supply portion 4Z to applying electrode portion 3Z and apply the alive time.That is, can The processing time that corona treatment is carried out to workpiece 1Z is controlled by timer 5Z.
Injector 6Z is the vacuum generator connecting with the exhaust outlet of maintaining part 2Z.Injector 6Z is mentioned by generating from air For the gas stream of the high speed of the portion 7Z air provided, thus raw on the direction vertical with the gas stream using Venturi effect At negative pressure.Negative pressure is generated by injector 6Z, so that the gas in the inner space of maintaining part 2Z is discharged.That is, injector 6Z It is functioned as exhaust portion.Alternatively, it is also possible to replacement injector 6Z for example, by using vacuum pump.
Flowmeter 8Z configuration is in the flow path between the exhaust outlet and injector 6Z of maintaining part 2Z.Flowmeter 8Z is to above-mentioned The flow of the gas stream flowed in flow path is measured.
Figure 11 is the longitudinal section view for more specifically showing structure relevant to electrode portion 3Z and maintaining part 2Z is applied.In addition, In Figure 11, using X1Z as upside, as downside and shown using X2Z.
Maintaining part 2Z has grounding electrode portion 21Z and shell 22Z.Grounding electrode portion 21Z is, for example, rectangular-shape, is applied Earthing potential.Shell 22Z is the box part for such as rectangular-shape being open above, from below to grounding electrode portion 21Z into Row bearing.Electrode portion 21Z and shell 22Z is grounded to surround and form inner space 2AZ.That is, maintaining part 2Z has inner space 2AZ.The side of shell 22Z is provided with exhaust outlet 221Z.Exhaust outlet 221Z is connect with injector 6Z (Figure 10).
Grounding electrode portion 21Z has setting face 21AZ as upper surface.Workpiece 1Z is placed in contact with setting face 21AZ. Grounding electrode portion 21Z has lower surface 21BZ in the inner space side 2AZ.Grounding electrode portion 21Z has multiple adsorption hole 211Z.It inhales Attached hole 211Z is the through hole penetrated through along the vertical direction from setting face 21AZ to lower surface 21BZ.In addition, adsorption hole 211Z can also To be single.In the state that workpiece 1Z is set to setting face 21AZ, by the setting face of workpiece 1Z closing adsorption hole 211Z The side end 21AZ.
In addition, it is from setting face 21AZ to lower surface that grounding electrode portion 21Z, which has intercommunicating pore 212Z, intercommunicating pore 212Z, The through hole that 21BZ is penetrated through along the vertical direction.The not set workpiece 1Z on intercommunicating pore 212Z.That is, face will be arranged in intercommunicating pore 212Z Space above 21AZ is connected with inner space 2AZ.
Apply electrode portion 3Z configuration in the top of grounding electrode portion 21Z.Dielectric 9Z is shown in FIG. 11.That is, this reality The plasma processing apparatus 100Z for applying mode has dielectric 9Z.Dielectric 9Z covering applies the lower surface of electrode portion 3Z.Make For dielectric 9Z material, it is preferable to use the ceramic materials such as aluminium oxide, zirconium oxide or free-cutting ceramics etc..
Workpiece 1Z is clamped along the vertical direction by dielectric 9Z and grounding electrode portion 21Z.Lower surface and work in dielectric 9Z Gap S1Z is provided between the upper surface of part 1Z.In addition, demarcation plate 10Z configuration is opposed with workpiece 1Z across intercommunicating pore 212Z Position, grounding electrode portion 21Z and dielectric 9Z are connected.
It is internal empty when the gas in the 2AZ of inner space is discharged via exhaust outlet 221Z to outside by injector 6Z Between 2AZ be negative pressure.Workpiece 1Z is adsorbed on the 21AZ of setting face via adsorption hole 211Z as a result,.At this point, formed processing gas to The gas stream flowed into the S1Z of gap.In addition, being shown in Figure 11 using the flowing of processing gas as gas stream F1Z.Processing The type of gas is air or nitrogen etc., is not particularly limited.
Workpiece 1Z is grounded and being connected with the grounding electrode portion 21Z for being applied earthing potential, to application electrode portion 3Z It is applied with the high voltage of high frequency, therefore generates dielectric barrier discharge in the S1Z of gap.Generated in the S1Z of gap as a result, etc. Gas ions P1Z is handled the upper surface of workpiece 1Z using the reactive species of the plasma P 1Z of generation.It can be situated between by electricity Matter barrier discharge forms stable electric discharge in the S1Z of gap under atmospheric pressure.
Gap S1Z is connected to via intercommunicating pore 212Z with inner space 2AZ, therefore by making inner space 2AZ negative pressure, from And it is empty via intercommunicating pore 212Z and inside by the defined gas (such as nitrogen oxides, ozone etc.) of plasmarized generation Between 2AZ to outside be discharged.
In the present embodiment, workpiece 1Z is adsorbed in by setting face 21AZ by adsorption hole 211Z, to keep workpiece 1Z tight On the 21AZ of the setting face of being attached to.Become the very sufficient state of conducting of workpiece 1Z and grounding electrode portion 21Z as a result, it is suppressed that in work Potential difference is generated between part 1Z and grounding electrode portion 21Z.Therefore, it is able to suppress and is produced between workpiece 1Z and grounding electrode portion 21Z Raw paradoxical discharge.Thereby, it is possible to inhibit the lower surface to workpiece 1Z to carry out unnecessary processing.
In other words, the plasma processing apparatus 100Z of present embodiment includes maintaining part 2Z, has the ground connection of ground connection Electrode portion 21Z keeps workpiece 1Z；Apply electrode portion 3Z, is applied defined voltage；And exhaust portion (injector 6Z), the gas in the inner space 2AZ of maintaining part 2Z is discharged, grounding electrode portion 21Z includes setting face 21AZ, supplies Workpiece 1Z is contacted and is arranged；And adsorption hole 211Z, from setting face 21AZ, internally space 2AZ is penetrated through.
The gas in the 2AZ of inner space is discharged by exhaust portion 6Z, so that inner space 2AZ is negative pressure, via absorption Workpiece 1Z is adsorbed in the setting face 21AZ of grounding electrode portion 21Z by hole 211Z, is grounded workpiece 1Z.As a result, workpiece 1Z with apply Add and generate plasma between electrode portion 3Z, can using generate plasma reactive species to the surface workpiece 1Z at Reason.It is fixed, is able to suppress in grounding electrode portion 21Z and workpiece since workpiece 1Z can be made to be tightly attached to setting face 21AZ Potential difference is generated between 1Z and generates paradoxical discharge.
In addition, grounding electrode portion 21Z have intercommunicating pore 212Z, intercommunicating pore 212Z by workpiece 1Z and apply electrode portion 3Z it Between gap S1Z be connected to inner space 2AZ.
Thereby, it is possible to using public exhaust portion 6Z carry out workpiece 1Z to the absorption of grounding electrode portion 21Z and by etc. from Daughter and the gas that generates via intercommunicating pore 212Z discharge.
Alternatively, it is also possible to be not provided with intercommunicating pore 212Z, and the defined gas for passing through plasmarized generation will be discharged Path be provided separately with the path being exhausted using injector 6Z.
In addition, as shown in Figure 10, the lower surface of workpiece 1Z is flat, and utilizes the following table face closure adsorption hole of workpiece 1Z The setting face side end 21AZ of 211Z.In addition, it is without being limited thereto, such as can also be arranged in the lower surface of workpiece 1Z and be recessed upwards Recess portion (hemispherical etc.), thus utilize the recess portion closing adsorption hole 211Z the setting face side end 21AZ.
That is, the setting face side end 21AZ of adsorption hole 211Z is closed by workpiece 1Z.Thereby, it is possible to make workpiece 1Z to ground connection The adsorption capacity of electrode portion 21Z is bigger.
In addition, for example leg can also be arranged in the lower surface of workpiece 1Z, by leg configuration on setting face 21AZ. In this case, the lower surface of workpiece 1Z is in state more slightly floating than setting face 21AZ, can not be inhaled using workpiece 1Z closing The setting face side end 21AZ of attached hole 211Z, but the effect for adsorbing workpiece 1Z to setting face 21AZ can be obtained.
In addition, the sectional area along axial direction (up and down direction) observation of adsorption hole 211Z is preferably smaller than the edge of intercommunicating pore 212Z The sectional area of end on observation.Pressure difference is set to become larger via adsorption hole 211Z as a result, so as to make workpiece 1Z more be tightly attached to ground connection Electrode portion 21Z.
The 5th embodiment > of <
Figure 12 is the longitudinal section view for showing a part of structure of plasma processing apparatus 200Z of the 5th embodiment.Separately Outside, in the present embodiment, direction central axis C1Z extended be referred to as " axial direction ", using axial direction the side X1Z as " on Side ", using the axial side X2Z as " downside ".In addition, by " circumferential direction " is known as around the direction of central axis C1Z, by central axis The radial direction of C1Z is known as " radial direction ".
Plasma processing apparatus 200Z have maintaining part 12Z, apply electrode portion 13Z, high-voltage power supply portion 14Z and Dielectric 15Z.In addition, plasma processing apparatus 200Z other than with above-mentioned component, also has and above-mentioned Figure 10 phase Same injector, air offer portion and flowmeter (not shown).
Maintaining part 12Z has grounding electrode portion (workpiece holding frame) 121Z and shell 122Z.Grounding electrode portion 121Z is big Cause it is cylindric, have opening portion 121AZ.Opening portion 121AZ be formed as centered on central axis C1Z along axially through.Ground connection Electrode portion 121Z be it is made of metal, be applied earthing potential.
Shell 122Z is the cylindrical shape of upper opening, is supported from below to grounding electrode portion 121Z.It is grounded electricity Pole portion 121Z and shell 22Z is surrounded and is formed inner space 12AZ.That is, maintaining part 12Z has inner space 12AZ.In addition, The side of shell 122Z is formed with exhaust outlet 122AZ.
Applying electrode portion 13Z is the metal parts axially extended centered on central axis C1Z.Dielectric 15Z is in It is axially extended centered on mandrel line C1Z.Dielectric 15Z is in the internal hollow portion 15AZ for having and axially extending.That is, electricity is situated between Matter 15Z has the cylindrical shape axially extended.Hollow portion 15AZ runs through dielectric 15Z from lower end to upper end.
Apply electrode portion 13Z configuration in hollow portion 15AZ.It is configured with as a result, in the radial outside for applying electrode portion 13Z Dielectric 15Z.The material of dielectric 15Z is identical as the 4th above-mentioned embodiment.
In addition, Figure 12 is the figure for showing the state relative to maintaining part 12Z setting workpiece 11Z.In this state, by workpiece 11Z and maintaining part 12Z forms semi-enclosed space.Figure 13 is the perspective view of workpiece 11Z.Workpiece 11Z includes generally cylindrical base Body 111Z；Columned protrusion 112Z is located at the lower section of matrix 111Z；And flange part 113Z, from the outer of matrix 111Z Circumferential surface upper end is prominent to radial outside, and is formed as cyclic annular.
In addition, workpiece 11Z have recess portion 11AZ, recess portion 11BZ and along axially through through hole 11CZ.It is columned The upper end position of recess portion 11AZ is consistent with the upper end position of flange part 113Z.Columned recess portion 11BZ is at recess portion 11AZ Side is continuously configured with recess portion 11AZ.Columned through hole 11CZ continuously matches in the lower section of recess portion 11BZ with recess portion 11BZ It sets.That is, recess portion 11AZ, recess portion 11BZ and through hole 11CZ are interconnected.
Base portion 111Z has the anchor ring 111AZ as circular face in lower end.Protrusion 112Z is from anchor ring 111AZ Radially inner side protrude downwards.Grounding electrode portion 121Z has setting face 1211Z as upper surface.Pass through anchor ring 111AZ is positioned on the 1211Z of setting face, and workpiece 11Z maintained portion 12Z is kept.At this point, protrusion 112Z and opening portion 121AZ are embedding It closes.
The contact inner wall 121A1Z as the inner wall axially extended of opening portion 121AZ is configured to and protrusion 112Z as outer peripheral surface contact outer peripheral surface 112AZ contact, thus prevent workpiece 11Z with the shifting in axially vertical plane It is dynamic.
Apply electrode portion 13Z and dielectric 15Z to pass through from the downside of through hole 11CZ to the upside of through hole 11CZ Through-hole 11CZ.That is, applying electrode portion 13Z and dielectric 15Z both with respect to the axial whole and week of the inner wall of through hole 11CZ It is opposed radially to entirety.The gap S2Z of cylindrical shape is formed between dielectric 15Z and through hole 11CZ.Gap S2Z It is connected to via opening portion 121AZ with inner space 12AZ.
In addition, grounding electrode portion 121Z has multiple adsorption hole 121BZ as through hole axially extended.Ground connection electricity Pole portion 121Z has the lower surface 1212Z opposed in the axial direction with setting face 1211Z.Lower surface 1212Z is towards inner space 12AZ.Adsorption hole 121BZ is penetrated through from setting face 1211Z to lower surface 1212Z.In addition, adsorption hole 121BZ is also possible to individually.
In the state that workpiece 11Z is set to setting face 1211Z, anchor ring 111AZ closes the setting face of adsorption hole 121BZ The side end 1211Z.
When using the injector (not shown) that is connect with exhaust outlet 122AZ by the gas in the 12AZ of inner space from exhaust outlet For 122AZ to when the discharge of outside, the inside inner space 122AZ is negative pressure.The position more upper than through hole 11CZ is under atmospheric pressure Extraneous gas side.Workpiece 11Z is adsorbed on setting face via adsorption hole 121BZ using the pressure difference of extraneous gas side and negative pressure On 1211Z.Workpiece 11Z is connected to be grounded with the grounding electrode portion 121Z for being applied earthing potential as a result,.
At this point, inner space 12AZ is negative pressure, thereby produces and flow to internal sky from extraneous gas side by gap S2Z Between 12AZ gas stream.Using the gas stream, processing gas is guided from extraneous gas side to through hole 11CZ.In present embodiment In, processing gas is extraneous gas, is sprayed above Figure 12 but if needing also to can use gas (not shown) and providing unit Desired gas.For example, being contemplated to be micro- to nitrogen in the case where eliminating the residues such as the cutting oil for being attached to made of metal workpiece Gas after amount addition oxygen, but in the present invention, do not limit gaseous species.
Workpiece 11Z ground connection, by high-voltage power supply portion 14Z to the high voltage for applying electrode portion 13Z application high frequency.Gap S2Z Gap it is relatively narrow, under atmospheric pressure in the S2Z of gap generate electric discharge.It is steadily discharged using dielectric barrier discharge.Cause This, generates plasma P 2Z in the S2Z of gap.Plasma P 2Z is generated on the whole in the axial whole and circumferential of gap S2Z.
In such manner, it is possible to using the reactive species of the plasma P 2Z generated inside through hole 11CZ directly to through hole The inner wall of 11CZ is handled, therefore compared to the processing of the device progress using remote mode, can carry out at high speed etc. Gas ions processing.
For example, can be removed using corona treatment residual in the case where forming through hole 11CZ relative to workpiece 11Z Stay in the cutting oil of the inner wall of through hole 11CZ.The wetability of through hole 11CZ is improved as a result, is utilized so as to improve Adhesive strength of the bonding agent by component relative to through hole 11CZ when fixed.In addition, being directed to the corona treatment of through hole not Be limited to it is above-mentioned, such as can be used for through hole inner wall formed film.
In addition, the defined gas that can will be generated and keeping processing gas plasmarized inside through hole 11CZ (such as nitrogen oxides, ozone etc.) is discharged via inner space 12AZ and exhaust outlet 122AZ to outside, to inhibit above-mentioned rule Leakage of the fixed gas to external gas side.In addition, because inner space 12AZ negative pressure caused by pressure difference with extraneous gas, work Part 11Z is resisted against grounding electrode portion 121Z and is kept, to also be able to suppress the shake of workpiece 11Z.
Especially, if making the gap turn narrow between dielectric 15Z and through hole 11CZ, cutting for gap S2Z can be made Area becomes smaller, to make the flow velocity high speed of the gas stream by gap S2Z.It is above-mentioned defined thereby, it is possible to further suppress Leakage of the gas to external gas side.In this case, although making gas stream high speed, due to workpiece 11Z as described above It is resisted against grounding electrode portion 121Z, therefore inhibits the shake of workpiece 11Z.
Apply electrode portion 13Z and dielectric 15Z from the downside of through hole 11CZ to the upside of through hole 11CZ through perforation Hole 11CZ.That is, applying two open ends of the electrode portion 13Z and dielectric 15Z than through hole 11CZ by protruding outward.Separately Outside, it is inside inside through hole 11CZ, is outside outside through hole 11CZ.Thereby, it is possible to make the two of through hole 11CZ openings The generation of plasma in end stabilizes.
In addition, applying electrode portion 13Z in the state of being applied with earthing potential to workpiece 11Z by high-voltage power supply portion 14Z Apply high voltage.Thereby, it is possible to make to be located at than applying the position of electrode portion 13Z in the outer part to which people is workpiece 11Z exposed to contact Side is earthing potential, so as to improve safety.
In addition, utilizing contact outer peripheral surface 112AZ and contact inner wall by the way that workpiece 11Z is set to grounding electrode portion 121Z Face 121A1Z carry out workpiece 11Z relative to grounding electrode portion 121Z with the positioning in axially vertical plane.Due to ground connection electricity Pole portion 121Z and the positional relationship of dielectric 15Z are determined in advance, therefore also specify workpiece 11Z by the setting of workpiece 11Z With the positional relationship of dielectric 15Z.The management in the gap between the inner wall of through hole 11CZ and dielectric 15Z becomes as a result, It is easy.By the management in gap, the corona treatment of the inner wall of through hole 11CZ can be made to homogenize.In addition, workpiece 11Z It can be loaded and unloaded in the axial direction relative to grounding electrode portion 121Z.
It, can be to from row in addition, due to by flowmeter configuration on flow path between exhaust outlet 122AZ and injector Port 122AZ is measured to the flow of the gas stream of outside discharge.Thereby, it is possible to workpiece 11Z to grounding electrode portion 121Z Fixed stationary state is detected extremely as caused by pressure difference.
Moreover, especially in the present embodiment, using the absorption of adsorption hole 121BZ, workpiece 11Z is made to be tightly attached to setting face 1211Z.As a result, become workpiece 11Z and grounding electrode portion 121Z the very sufficient state of conducting, it is suppressed that workpiece 11Z with connect Potential difference is generated between ground electrode portion 121Z.Therefore, it is able to suppress between workpiece 11Z and grounding electrode portion 121Z and generates exception Electric discharge.Thereby, it is possible to inhibit the anchor ring 111AZ to workpiece 11Z to carry out unnecessary processing.
In other words, the plasma processing apparatus 200Z of present embodiment includes maintaining part 12Z, has connecing for ground connection Ground electrode portion 121Z, keeps workpiece 11Z；Apply electrode portion 13Z, is applied defined voltage；And exhaust portion, By the gas discharge in the inner space 12AZ of maintaining part 12Z, grounding electrode portion 121Z includes setting face 1211Z, for workpiece 11Z is contacted and is arranged；And adsorption hole 121BZ, from setting face 1211Z, internally space 12AZ is penetrated through.
The gas in the 12AZ of inner space is discharged by exhaust portion as a result, so that inner space 12AZ is negative pressure, workpiece 11Z is attracted to the setting face 1211Z of grounding electrode portion 121Z via adsorption hole 121BZ, so that workpiece 11Z is grounded.By This, in workpiece 11Z and applies generation plasma P 2Z between electrode portion 13Z, can utilize the work of the plasma P 2Z generated Property kind handles the surface workpiece 11Z.It is fixed since workpiece 11Z can be made to be tightly attached to setting face 1211Z, it can Inhibition generates potential difference between grounding electrode portion 121Z and workpiece 11Z, to inhibit to generate paradoxical discharge.
In addition, grounding electrode portion 121Z has intercommunicating pore (opening portion 121AZ), the intercommunicating pore is by workpiece 11Z and applies electricity Gap S2Z between pole portion 13Z is connected to inner space 12AZ.
Thereby, it is possible to using public exhaust portion carry out workpiece 11Z to the absorption of grounding electrode portion 121Z and by etc. from Daughter and the discharge of gas generated.
In addition, applying electrode portion the 13Z at least inside of through hole 11CZ possessed by workpiece 11Z and through hole 11CZ At least part it is opposed radially.
It is exhausted as a result, by exhaust portion, so that processing gas is imported into through hole 11CZ and applies electrode portion 13Z Between gap S2Z in, in the S2Z of gap generate plasma P 2Z, can be passed through to what the plasma P 2Z with generation was contacted The inner wall of through-hole 11CZ is handled.Using such direct corona treatment, can make through hole 11CZ it is equal from Daughter handles high speed.
In addition, the sectional area along end on observation of adsorption hole 121BZ is preferably smaller than the edge of intercommunicating pore (opening portion 121AZ) The sectional area of end on observation, this point are identical as above-mentioned 4th embodiment.
In addition, the setting face side end 1211Z of adsorption hole 121BZ is preferably closed by workpiece 11Z, this point is also with above-mentioned 4 embodiments are identical.
Here, mode relevant to the configuration of adsorption hole 121BZ is illustrated.Figure 14 A is maintaining part viewed from above 12Z and the top view for applying electrode portion 13Z, show an example of the configuration of adsorption hole 121BZ.In Figure 14 A, outer rim 11SZ Indicate the outer rim of the setting area of workpiece 11Z, outer rim 121SZ indicates the outer rim of grounding electrode portion 121Z.
As shown in Figure 14 A, when along end on observation, adsorption hole 121BZ circumferentially, equally spaced matches on same round Cr1Z It is equipped with 4.That is, adsorption hole 121BZ circumferentially configures one every 90 °.
In addition, Figure 14 B is the variation of Figure 14 A, another example of the configuration of adsorption hole 121BZ is shown.In Figure 14 B, When along end on observation, adsorption hole 121BZ is circumferentially, equally spaced configured with 3 on same round Cr1Z.That is, adsorption hole 121BZ Circumferentially one is configured every 120 °.
In Figure 14 A, using Central Line that the area R1Z between opening portion 121AZ and outer rim 11SZ is second-class In the case where point, 2 adsorption hole 121BZ are each configured in each region after singulation.Area R1Z is setting face The region contacted with workpiece 11 in 1211Z.Similarly, in fig. 14b, using Central Line that area R1Z is second-class In the case where point, 1 adsorption hole 121BZ, 2 adsorption hole 121BZ are each configured in each region after singulation.
That is, the region R1Z contacted with workpiece 11Z being arranged in the 1211Z of face is halved the area Hou Ge using Central Line At least one adsorption hole 121BZ is respectively arranged in domain.
Thereby, it is possible to inhibit workpiece 11Z relative to the cantilever position of grounding electrode portion 121Z.
In addition, adsorption hole 121BZ is on same round Cr1Z circumferentially, equally spaced configured with multiple.
Thereby, it is possible to adsorb workpiece 11Z more uniformly to grounding electrode portion 121Z.
The 6th embodiment > of <
Figure 15 is the longitudinal section view for showing a part of structure of plasma processing apparatus 300Z of the 6th embodiment.It should 6th embodiment is with the 5th above-mentioned embodiment the difference lies in that plasma processing apparatus 300Z has elastomeric element 16Z.Elastomeric element 16Z is by the cylinder-like part of the formation such as resin.Elastomeric element 16Z is fixed on the inner wall of opening portion 121AZ Face.The upper surface of elastomeric element 16Z is located at the position more against the top than setting face 1211Z in its natural state.
When workpiece 11Z is set to plasma processing apparatus 300Z from top in the state of Figure 15, become Figure 16 Shown in state.When workpiece 11Z is arranged, firstly, making the protrusion 112Z of workpiece 11Z and the space surrounded by elastomeric element 16Z Upper end it is chimeric.At this point, the edge of protrusion 112Z is easy to contact with other objects, but due to being easy and elastomeric element outstanding 16Z contact, therefore protrusion 112Z can be protected.
When keeping workpiece 11Z chimeric with elastomeric element 16Z, the anchor ring 111AZ of workpiece 11Z is placed in elastomeric element 16Z Upper surface outstanding.Then, using the weight of workpiece 11Z, make workpiece 11Z that elastomeric element 16Z be overcome to shrink generated bullet Power and move downwards.Then, workpiece 11Z stops at the weight of workpiece 11Z and the position of Spring balanced.At this point, workpiece 11Z Anchor ring 111AZ be located at than the position slightly against the top setting face 1211Z.
Moreover, utilizing adsorption hole when the gas in the 12AZ of inner space is discharged using exhaust portion (injector) 121BZ makes workpiece 11Z further move downwards and be adsorbed on the 1211Z of setting face.In this way, passing through setting elastomeric element 16Z is able to suppress and collides caused impact with the setting face 1211Z of workpiece 11Z when workpiece 11Z is arranged.In addition, making work When part 11Z is chimeric with elastomeric element 16Z, also can use workpiece 11Z weight make workpiece 11Z downwards move until with setting Until face 1211Z is contacted.
That is, being provided with the elastomeric element 16Z that can load workpiece 11Z in grounding electrode portion 121Z, elastomeric element 16Z exists It is more prominent than setting face 1211Z under natural conditions.
As a result, by the way that workpiece 11Z to be placed in the position outstanding of elastomeric element 16Z, by elastomeric element 16Z to workpiece 11Z applies elastic force.Thereby, it is possible to inhibit workpiece 11Z and impact caused by the collision of face 1211Z is arranged.
In addition, grounding electrode portion 121Z has the hole portion (opening portion that can be inserted into for the protrusion 112Z of workpiece 11Z 121AZ), elastomeric element 16Z is configured at the inner wall of hole portion 121AZ.
As a result, when workpiece 11Z is set to grounding electrode portion 121Z, it is easy to contact with other objects in workpiece 11Z The edge of protrusion 112Z be easy to contact with elastomeric element 16Z, therefore protrusion 112Z can be protected.
The variation > of the 6th embodiment of <
Figure 17 is the vertical profile for showing a part of structure of the plasma processing apparatus 301Z of variation of the 6th embodiment View.Plasma processing apparatus 301Z has multiple elastomeric element 161Z.Elastomeric element 161Z is annular shape.In adsorption hole The setting face side end 1211Z of 121BZ forms the recess portion 121B1Z of oriented radial expansion.Elastomeric element 161Z is incorporated in recess portion In 121B1Z.In its natural state, the upper surface of elastomeric element 161Z is located at the position more against the top than setting face 1211Z.
When workpiece 11Z is set to plasma processing apparatus 301Z from top in the state of Figure 17, become Figure 18 Shown in state.Keep the protrusion 112Z of workpiece 11Z chimeric with opening portion 121AZ and is placed in the anchor ring 111AZ of workpiece 11Z The upper surface outstanding of elastomeric element 161Z.Then, using the weight of workpiece 11Z, workpiece 11Z overcomes elastomeric element 161Z to shrink Generated elastic force and move downwards.Then, workpiece 11Z stops at the weight of workpiece 11Z and the position of Spring balanced. At this point, the anchor ring 111AZ of workpiece 11Z is located at the position slightly more against the top than setting face 1211Z.
Moreover, utilizing adsorption hole when the gas in the 12AZ of inner space is discharged using exhaust portion (injector) 121BZ makes workpiece 11Z further move downwards and be adsorbed on the 1211Z of setting face.In this way, passing through setting elastomeric element 161Z is able to suppress workpiece 11Z and setting face 1211Z when workpiece 11Z is arranged and collides caused impact.In addition, by work When part 11Z is placed in elastomeric element 161Z, also can use workpiece 11Z weight make workpiece 11Z downwards move until with set Until setting face 1211Z contact.
The 7th embodiment > of <
Figure 19 is the vertical profile for showing a part of structure of plasma processing apparatus 400Z of the 7th embodiment of the invention View.In the present embodiment, workpiece 11Z is held in holding in a manner of overturning with the 5th embodiment (Figure 12) up and down direction Portion 12Z.
Maintaining part 12Z has grounding electrode portion 123Z and shell 122Z.Grounding electrode portion 123Z have along axially through Opening portion 123AZ.It is circular mounting surface 1231Z when grounding electrode portion 123Z has above along end on observation, and has There is the annulus protrusion 1232Z upwardly projecting from the radially inner side edge of mounting surface 1231Z.The outer peripheral surface of annulus protrusion 1232Z is The contact outside wall surface 1232AZ axially extended.
Since up and down direction and the 5th embodiment of workpiece 11Z is on the contrary, therefore recess portion 11BZ is located at than through hole 11CZ Position on the lower, recess portion 11AZ are located at the position than recess portion 11BZ on the lower.The outer peripheral surface of recess portion 11BZ is connecing for workpiece 11Z Touch inner peripheral surface 11B1Z.Workpiece 11Z is configured to make to contact outside wall surface 1232AZ and contact inner peripheral surface 11B1Z is contacted, and is somebody's turn to do Workpiece 11Z is placed on the 1231Z of setting face.Prevent as a result, workpiece 11Z with the movement in axially vertical plane.
In addition, grounding electrode portion 123Z has multiple adsorption hole 123BZ axially extended.Grounding electrode portion 123Z tool There is the lower surface 1232Z opposed in the axial direction with setting face 1231Z.Lower surface 1232Z is towards inner space 12AZ.Adsorption hole 123BZ from setting face 1231Z to lower surface 1232Z along axially through.Workpiece 11Z is in the position that recess portion 11AZ is connect with recess portion 11BZ Setting place has step surface 11DZ.It is closed by step surface 11DZ the setting face side end 1231Z of adsorption hole 123BZ.
In the state that workpiece 11Z is maintained at grounding electrode portion 123Z, apply electrode portion 13Z and dielectric 15Z from passing through The downside of through-hole 11CZ is penetrated through to the upside of through hole 11CZ.The top of through hole 11CZ is extraneous gas side.By will be internal Gas inside the 12AZ of space is discharged from the exhaust outlet 122AZ of shell 122Z, is negative pressure in the 12AZ of inner space.It generates as a result, From extraneous gas side via through hole 11CZ, opening portion 123AZ the gas stream that internally space 12AZ flows.
Workpiece 11Z is applied earthing potential via grounding electrode portion 123Z.By applying high frequency to application electrode portion 13Z High voltage, electric discharge is generated in the gap S3Z between dielectric 15Z and the inner wall of through hole 11CZ.As a result, in gap Plasma P 3Z is generated in S3Z.Directly above-mentioned inner wall can be handled using the plasma P 3Z generated.Because of outside The pressure difference of gas and negative pressure, workpiece 11Z are pressed against grounding electrode portion 123Z and are fixed.
In addition, by making inner space 12AZ negative pressure, workpiece 11Z is adsorbed and is tightly attached to via adsorption hole 123BZ On the 1231Z of setting face.Thus, it is suppressed that generate potential difference between workpiece 11Z and grounding electrode portion 123Z and generate abnormal put Electricity.
Other > of <
More than, embodiments of the present invention are illustrated, but as long as in the range of the purport of the present invention, embodiment party Formula can carry out various modifications.
For example, in the above-described embodiment, the object of corona treatment is the through hole of workpiece, but not limited to this. For example, each upper end insertion for applying electrode portion 13 and dielectric 19 can also be made in the 2nd embodiment shown in Fig. 4 Hole portion be the hook hole not penetrated through.Plasma is generated in the gap between the inner wall and dielectric 19 in hook hole as a result, Body can be handled above-mentioned inner wall.
In addition, for example used dielectric in above embodiment 4~7, but can be by applying to applying electrode portion The waveform control of the voltage added, can also be using not using dielectric structure come when inhibiting arc discharge.
The present invention for example can be used in the corona treatment of the cutting oil for the through hole for being attached to workpiece.

Claims (23)

1. a kind of plasma processing apparatus carries out corona treatment to workpiece, which is characterized in that
The plasma processing apparatus includes
Apply electrode portion, is applied defined voltage；And
Dielectric is configured between the workpiece and the application electrode portion.
2. plasma processing apparatus according to claim 1, which is characterized in that
The workpiece grounding,
The electrode portion that applies has the gases route flowed for processing gas in inside,
Gap between the gases route and the dielectric and the workpiece is connected to.
3. plasma processing apparatus according to claim 2, which is characterized in that
The application electrode portion axially extends,
The dielectric has gas flow path, which is configured at the axial side for applying electrode portion, and along axial direction The gases route connection extended.
4. plasma processing apparatus according to claim 3, which is characterized in that
The application electrode portion, the gases route and the dielectric axially extend,
The dielectric has the hollow portion axially extended,
The application electrode portion is configured in the hollow portion,
At least part of the inner wall for applying hole portion possessed by electrode portion and the dielectric and the workpiece is in diameter It is opposed upwards.
5. plasma processing apparatus according to claim 4, which is characterized in that
The plasma processing apparatus also includes
Maintaining part keeps the workpiece；And
Gas in the inner space of the maintaining part is discharged exhaust portion,
The inner space is connected to the gap.
6. plasma processing apparatus according to claim 4 or 5, which is characterized in that
The electrode portion that applies has the deformation absorption portion absorbed to the radial deformation as caused by heat.
7. plasma processing apparatus according to claim 6, which is characterized in that
The application electrode portion is cylindrical shape, has the notch axially extended as the deformation absorption portion.
8. plasma processing apparatus according to claim 7, which is characterized in that
The application electrode portion is sheet.
9. plasma processing apparatus according to claim 1, which is characterized in that
The application electrode portion axially extends,
The dielectric axially extends,
The dielectric has the hollow portion axially extended,
The application electrode portion configures in the hollow portion,
The electrode portion that applies has the deformation absorption portion absorbed to the radial deformation as caused by heat.
10. plasma processing apparatus according to claim 9, which is characterized in that
The application electrode portion is cylindrical shape, has the notch axially extended as the deformation absorption portion.
11. plasma processing apparatus according to claim 10, which is characterized in that
The application electrode portion is sheet.
12. according to plasma processing apparatus described in any one in claim 9 to 11, which is characterized in that
At least part of the inner wall for applying hole portion possessed by electrode portion and the dielectric and the workpiece of ground connection exists It is radially opposed.
13. plasma processing apparatus according to claim 12, which is characterized in that
The plasma processing apparatus also includes
Maintaining part keeps the workpiece；
Gas in the inner space of the maintaining part is discharged exhaust portion,
Gap between the inner space and the inner wall and the dielectric is connected to.
14. a kind of plasma processing apparatus, which is characterized in that
The plasma processing apparatus includes
Maintaining part keeps workpiece, has the grounding electrode portion of ground connection；
Apply electrode portion, is applied defined voltage；And
Gas in the inner space of the maintaining part is discharged exhaust portion,
The grounding electrode portion includes
Setting face is arranged to contact for the workpiece；And
Adsorption hole is penetrated through from the setting towards the inner space.
15. plasma processing apparatus according to claim 14, which is characterized in that
The grounding electrode portion have intercommunicating pore, the intercommunicating pore by the workpiece and it is described apply electrode portion between gap and institute State inner space connection.
16. plasma processing apparatus according to claim 15, which is characterized in that
Described at least part for applying the electrode portion at least inside of the through hole possessed by the workpiece and the through hole It is opposed radially.
17. plasma processing apparatus according to claim 15, which is characterized in that
The sectional area along end on observation of the adsorption hole is less than the sectional area along end on observation of the intercommunicating pore.
18. plasma processing apparatus according to claim 16, which is characterized in that
The sectional area along end on observation of the adsorption hole is less than the sectional area along end on observation of the intercommunicating pore.
19. plasma processing apparatus described in any one in 4 to 18 according to claim 1, which is characterized in that
It is closed by the workpiece setting surface side end of the adsorption hole.
20. plasma processing apparatus described in any one in 4 to 18 according to claim 1, which is characterized in that
It is set respectively in each region after being halved the region contacted with the workpiece in the setting face using Central Line It is equipped with adsorption hole described at least one.
21. plasma processing apparatus according to claim 20, which is characterized in that
The adsorption hole is on the same circle circumferentially, equally spaced configured with multiple.
22. plasma processing apparatus described in any one in 4 to 18 according to claim 1, which is characterized in that
The elastomeric element that can load the workpiece is provided in the grounding electrode portion, the elastomeric element is in nature It is lower more prominent than the setting face.
23. plasma processing apparatus according to claim 22, which is characterized in that
The grounding electrode portion has the hole portion that can be inserted into for the protrusion of the workpiece,
The elastomeric element is configured at the inner wall of the hole portion.
CN201910188057.1A 2018-03-13 2019-03-13 Plasma processing apparatus Pending CN110278650A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018045782A JP2019160565A (en) 2018-03-13 2018-03-13 Plasma processing apparatus
JP2018-045779 2018-03-13
JP2018045779A JP2019160564A (en) 2018-03-13 2018-03-13 Plasma processing apparatus
JP2018045773A JP2019160562A (en) 2018-03-13 2018-03-13 Plasma processing apparatus
JP2018-045782 2018-03-13
JP2018-045773 2018-03-13

Publications (1)

Publication Number Publication Date
CN110278650A true CN110278650A (en) 2019-09-24

Family

ID=67959206

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910188057.1A Pending CN110278650A (en) 2018-03-13 2019-03-13 Plasma processing apparatus

Country Status (1)

Country Link
CN (1) CN110278650A (en)

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Application publication date: 20190924