CN110272270A - A kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics and preparation method thereof - Google Patents
A kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics and preparation method thereof Download PDFInfo
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- CN110272270A CN110272270A CN201910582277.2A CN201910582277A CN110272270A CN 110272270 A CN110272270 A CN 110272270A CN 201910582277 A CN201910582277 A CN 201910582277A CN 110272270 A CN110272270 A CN 110272270A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract 3
- 239000004615 ingredient Substances 0.000 claims description 18
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 13
- 229910052808 lithium carbonate Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 8
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000748 compression moulding Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 4
- 229920002545 silicone oil Polymers 0.000 claims description 4
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000004411 aluminium Substances 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000010304 firing Methods 0.000 claims 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 10
- 239000011656 manganese carbonate Substances 0.000 abstract description 8
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 abstract description 8
- 229910003419 NdCoO3 Inorganic materials 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 14
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 14
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 12
- 230000028161 membrane depolarization Effects 0.000 description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910002902 BiFeO3 Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 2
- 229910019714 Nb2O3 Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Abstract
The invention discloses a kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics and preparation method thereof, formula composition general formula is (Bi1‑w M w )(Fe1‑ t Me''' t )O3‑xBaTiO3+yBi(Me'0.5Me''0.5)O3+zBi(Zn0.5Ti0.5)O3+uNdCoO3 +mP+nMnCO3, whereinx、y、z、 u、m、n、t、wExpression molar fraction, 0 <x≤ 0.4,0≤y≤ 0.1,0 <z< 0.05,0≤u≤ 0.1,0 <m≤ 0.1,0 <n≤ 0.1,0≤w≤0.1、0≤t≤0.1.M, Me''' are trivalent metallic element in formula, and Me'', M' are respectively divalent, pentagonal metal element, and P is sintering aid.The piezoelectric ceramics has low-dielectric loss and high-temperature stability, can be applied to high-temperature field.
Description
Technical field
The present invention relates to a kind of high-temp leadless piezoelectric ceramics and preparation method thereof, it is specifically a kind of have low-dielectric loss and
The bismuth ferrite of high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics and preparation method thereof.
Background technique
High-temperature piezoelectric ceramics are widely used in the piezoelectric vibration sensors in the fields such as space flight and aviation, nuclear energy, oil exploration.
BiFeO3-BaTiO3System piezoelectric ceramics is because its is unleaded, sintering temperature is low, Curie temperature is high, depolarization temperature is high and good
Piezoelectric property etc. receives great attention.But the system answer it can not actually always since dielectric loss is higher always
With, therefore the dielectric loss of the system how is reduced, it is that the system is able to the key technology applied in high-temperature field.
BF-BT(BiFeO3-BaTiO3) dielectric loss of system mainly causes by the factor of the following aspects:
(1) due to pure BiFeO3Sintering temperature be 800 DEG C or so, and BaTiO3Sintering temperature be 1450 DEG C or so, two
Person's difference reaches 650 DEG C, therefore, in order to improve BiFeO3-BaTiO3The consistency and performance of ceramic systems, it has to will be sintered
Temperature is increased to 1000 DEG C or so, and Bi element highly volatile at these elevated temperatures, so that sintered products deviate design
Stoichiometric ratio, and lead to the generation of Lacking oxygen;
(2)Fe3+Ion appraises at the current rate, in temperature-fall period, Fe3+Ion has part that can be transformed into Fe2+Ion, for maintenance
Conjunction valence balance, also results in the generation of Lacking oxygen.The generation of a large amount of Lacking oxygens finally makes the leakage electrical conduction current of sample high, causes
Polarization is difficult.
Document [Serhiy O, J Am Ceram Soc, 2009,92 (12): 2957-2961], which has been reported to have, is in inner temperature
The BiFeO of degree and good piezoelectric property3–BaTiO3Based leadless piezoelectric ceramics, but need to be sintered in pure oxygen atmosphere, be not suitable for
Industrialization production, and its piezoelectric constant is lower, only 116pC/N;Document [Ichiro Fujii, J Appl Phys, 2011,
50:09ND07] report a kind of BaTiO that Mn is adulterated3-Bi(Mg1/2Ti1/2)O3-BiFeO3Leadless piezoelectric ceramics, but piezoelectricity
The best local Curie temperature of performance only has 470 DEG C, best piezoelectric constant d33Only 94pC/N does not report depolarization temperature
With temperature stability;Document [Dae Su Kim, Appl.Phys.Lett.109,202902 (2016)] is reported using in air
Middle quenching technical, piezoelectric property have been increased to 140pC/N from 70pC/N, can significantly improve piezoelectric property, but do not report
Dielectric loss and temperature stability;Document [Yongquan Guo, J Mater Sci:Mater Electron, 2017,28:
5531-5547] NdCoO is reported3The BFBT piezoelectric ceramics of doping vario-property, and obtain d33=110pC/N or so, Curie temperature
605 DEG C, the piezoelectric ceramics that depolarization temperature is 525 DEG C, but at 525 DEG C of depolarization point, piezoelectric property only has 80pC/N,
And dielectric loss is higher, is up to 7% or more in the best loss at branch of performance.
From the point of view of the research of forefathers, the dielectric loss of BF-BT system fails to obtain effective solution, therefore the system always
It is the dielectric loss for how controlling the system in the key that high-temperature piezoelectric field is able to apply, this research bottleneck is broken through, to height
The progress of temperature and pressure electric material will be of great significance.
Summary of the invention
For reducing the research of dielectric loss consumption, few people reduce sintering temperature using the method for addition sintering aid, subtract
Few Bi element evaporation and then the purpose for realizing inhibition Lacking oxygen generation.The purpose of the present invention is be directed to BiFeO3-BaTiO3System
Deficiency in the presence of preparation process, and a kind of bismuth ferrite-barium titanate with low-dielectric loss and high-temperature stability is provided
Base high-temperature leadless piezoelectric ceramics and preparation method thereof.Dielectric loss is effectively reduced to 1.0% hereinafter, and keeping high by the present invention
Piezoelectric property and high-temperature stability, so that BiFeO3-BaTiO3System piezoelectric ceramics can really be applied in high-temperature field.
Realizing the technical solution of the object of the invention is:
A kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics, matches
Fang Zucheng general formula are as follows:
(a)、(Bi1-wMw)(Fe1-tMe”'t)O3-xBaTiO3+yBi(Me'0.5Me”0.5)O3+zBi(Zn0.5Ti0.5)O3+
uNdCoO3+mP+nMnCO3, or
(b)、(Bi1-wMw)(Fe1-tMe”'t)O3-xBaTiO3+yBi(Me”2/3M'1/3)O3+zBi(Zn0.5Ti0.5)O3+
uNdCoO3+mP+nMnCO3;
Wherein x, y, z, u, m, n, w, t expression molar fraction, 0 < x≤0.4,0≤y≤0.1,0 < z < 0.05,0≤u≤
0.1,0 < m≤0.1,0 < n≤0.1,0≤w≤0.1,0≤t≤0.1, M is one or more of La, Er, Sm, Gd in formula,
Me " ' is one or more of trivalent metallic element Sc, In, Co and Ga, and Me' is tetravalent metal elements Zr, Sn, Ti, Ge and Hf
One of, Me " is one of divalent metal element Ni, Mg, Zn, Sr, Pd, one of M' Nb, Ta, Sb, V, wherein P
For B2O3、Li2CO3、V2O5、CuO、CeO2、LiBiO3、Ba(Cu1/3Nb2/3)O3、Ba(W0.5Cu0.5)O3One of or a variety of burnings
The combination of auxiliary agent is tied, and must wherein contain Li2CO3。
Above-mentioned bismuth ferrite-barium phthalate base high-temp leadless piezoelectric ceramics preparation with low-dielectric loss and high-temperature stability
Method includes the following steps:
(1) ingredient is carried out according to the component ratio of formula (a) or formula (b);
(2) it is medium by mixed-powder ball milling 24 hours of step (1) using dehydrated alcohol, in drying in 100 DEG C/6 hours, puts
Enter high alumina crucible and compacting, cover, place into Muffle furnace with the heating rate of 250 DEG C/h to 800 DEG C, keeps the temperature 4 hours and synthesize,
And cooling down is taken out afterwards to 200 DEG C or less;
(3) powder of step (2) synthesis is carried out taking out drying using dehydrated alcohol as medium secondary ball milling 24 hours;
(4) by after drying powder be added mass percent concentration be 5%PVA solution be granulated, in punching block in
Compression moulding under 100MPa, mold interior diameter are 1cm;
(5) molding plain piece is to slowly warm up to 600 DEG C in tube furnace with the heating rate of 30 DEG C/h, keeps the temperature dumping for 24 hours,
Then with the heating rate of 20 DEG C/min to 980-1000 DEG C, 120min is kept the temperature, then power-off cools to room temperature with the furnace;
(6) sintered sample is processed into two sides is smooth, thin slice of thickness 1mm, drapes over one's shoulders silver electrode, 600 DEG C/30min is burnt
It is spare after silver;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, 150 DEG C of temperature, the time 30 divides
Clock keeps electric field to be cooled to room temperature.
The positive effect of the present invention is:
The present invention has successfully prepared the high-temp leadless piezoelectric ceramics with low-dielectric loss and high-temperature stability, obtains
Dielectric loss is down to that 1.0% or less, piezoelectric constant reaches 100pC/N or more, Curie temperature is more than 630 DEG C, depolarization temperature
The BF-BT high-temp leadless piezoelectric ceramics that reaches 610 DEG C or more, can be applied in high-temperature field.This preparation method simple process, no
High-temperature and high-pressure conditions synthetic powder and pure oxygen atmosphere is needed to be sintered, and function admirable, this is for BiFeO3-BaTiO3System pressure
For electroceramics, there is important breakthrough and technical innovation, can be applied completely in space flight and aviation, nuclear energy, oil exploration etc.
Key areas.
Detailed description of the invention
Fig. 1 is the depolarization curve graph of the piezoelectric ceramics prepared in embodiment 2.
Specific embodiment
By example given below, the contents of the present invention can be further apparent from, but they are not to this
The restriction of invention.
Embodiment 1:
It is formulated (b) ingredient:
(Bi0.995La0.005)(Fe0.97Ga0.03)O3-0.25BaTiO3+0.01Bi(Mg2/3Nb1/3)O3+0.03Bi
(Zn0.5Ti0.5)O3+0.01NdCoO3+0.01Ba(W0.5Cu0.5)O3+0.01Li2CO3+0.01MnCO3, preparation method includes as follows
Step:
(1) to analyze pure Bi2O3、Fe2O3、La2O3、Ga2O3、BaCO3、TiO2、MgO、Nb2O3、ZnO、Nd2O3、Co2O3、
WO3、CuO、Li2CO3、MnCO3For raw material, ingredient is carried out according to formula rate;
(2) using dehydrated alcohol as medium by the mixed-powder ball milling 24 of step (1) it is small and when, 100 DEG C/6 hours dry;
Powder is put into high alumina crucible and compacting again, is covered, is placed into Muffle furnace with the heating rate of 250 DEG C/h to 800 DEG C, is kept the temperature
It synthesizes within 4 hours, and cooling down is taken out afterwards to 200 DEG C or less;
(3) powder of step (2) synthesis is carried out taking out drying using dehydrated alcohol as medium secondary ball milling 24 hours;
(4) by after drying powder be added mass percent concentration be 5%PVA solution be granulated, in punching block in
Compression moulding under 100MPa, mold interior diameter are 1cm;
(5) molding plain piece is to slowly warm up to 600 DEG C with the heating rate of 30 DEG C/h, dumping for 24 hours is kept the temperature, then with 20
DEG C/heating rate of min to 980 DEG C, keep the temperature 120min, then power-off cools to room temperature with the furnace;
(6) sintered sample is processed into two sides is smooth, thin slice of thickness 1mm, drapes over one's shoulders silver electrode, 600 DEG C/30min is burnt
It is spare after silver;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, 150 DEG C of temperature, the time 30 divides
Clock keeps electric field to be cooled to room temperature.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
97 | 143.2 | 0.314 | 630 | 610 | 0.973 |
Embodiment 2:
It is formulated (a) ingredient:
Bi(Fe0.97Ga0.03)O3-0.25BaTiO3+0.01Bi(Ti0.5Mg0.5)O3+0.03Bi(Zn0.5Ti0.5)O3+
0.01NdCoO3+0.01Li2CO3+0.005CuO+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、Ga2O3、BaCO3、TiO2、MgO、ZnO、Nd2O3、Co2O3、CuO、Li2CO3、
MnCO3For raw material, ingredient is carried out according to formula rate;
For other steps with embodiment 1, sintering temperature is 970 DEG C.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
102 | 129.6 | 0.328 | 626 | 605 | 0.945 |
It will be noted from fig. 1 that potsherd obtains d after 150 DEG C, 6000V/mm electric field polarization33=102pC/N's
Piezoelectric property has a step in 440 DEG C of depolarizations, and with the increase of depolarization temperature, at 610 DEG C, there are also d33=
The piezoelectric property of 80pC/N.
Embodiment 3:
It is formulated (b) ingredient:
Bi(Fe0.98Sc0.02)O3-0.3BaTiO3+0.025Bi(Zn2/3V1/3)O3+0.025Bi(Zn0.5Ti0.5)O3+
0.01NdCoO3+0.01Li2CO3+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、Sc2O3、BaCO3、TiO2、ZnO、V2O5、Nd2O3、Co2O3、Li2CO3、MnCO3For
Raw material carries out ingredient according to formula rate;
Other steps are the same as embodiment 1.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
97 | 116.6 | 0.301 | 618 | 605 | 0.934 |
Embodiment 4:
It is formulated (b) ingredient: Bi (Fe0.99Co0.01)O3-0.25BaTiO3+0.01Bi(Zn2/3Nb1/3)O3+0.025Bi
(Zn0.5Ti0.5)O3+0.01NdCoO3+0.01Li2CO3+0.008CuO+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、BaCO3、TiO2、ZnO、Nb2O5、Nd2O3、Co2O3、CuO、Li2CO3、MnCO3For
Raw material carries out ingredient according to formula rate;
Other steps are the same as embodiment 1.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
92 | 96.6 | 0.288 | 623 | 602 | 0.963 |
Embodiment 5:
It is formulated (a) ingredient:
Bi(Fe0.97Ga0.03)O3-0.25BaTiO3+0.01Bi(Ti0.5Mg0.5)O3+0.03Bi(Zn0.5Ti0.5)O3+
0.01Li2CO3+0.01Cu O+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、Ga2O3、BaCO3、TiO2、MgO、ZnO、Li2CO3、CuO、MnCO3For raw material, press
Ingredient is carried out according to formula rate;
Other steps are the same as embodiment 1.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
93 | 117.6 | 0.301 | 590 | 575 | 0.998 |
Embodiment 6:
It is formulated (a) ingredient:
Bi(Fe0.97In0.03)O3-0.30BaTiO3+0.01Bi(Ti0.5Mg0.5)O3+0.03Bi(Zn0.5Ti0.5)O3+
0.01NdCoO3+0.01Li2CO3+0.01CuO+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、In2O3、BaCO3、TiO2、MgO、ZnO、Nd2O3、Co2O3、CuO、Li2CO3、
MnCO3For raw material, ingredient is carried out according to formula rate;
Other steps are the same as embodiment 1.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
87 | 104.4 | 0.298 | 595 | 575 | 0.913 |
Embodiment 7:
It is formulated (a) ingredient:
Bi(Fe0.98Sc0.02)O3-0.30BaTiO3+0.01Bi(Ti0.5Mg0.5)O3+0.03Bi(Zn0.5Ti0.5)O3+
0.01NdCoO3+0.01Li2CO3+0.005CuO+0.01MnCO3,
Preparation method comprises the following steps:
(1) to analyze pure Bi2O3、Fe2O3、Sc2O3、BaCO3、TiO2、MgO、ZnO、Nd2O3、Co2O3、CuO、Li2CO3、
MnCO3For raw material, ingredient is carried out according to formula rate;
Other steps are the same as embodiment 1.
Performance measurements are as follows:
d33(pC/N) | Qm | kp(%) | Tc(℃) | Td(℃) | Tan δ (%) |
81 | 109.6 | 0.306 | 590 | 570 | 0.965 |
The bound of ingredient cited by the present invention, the bound of section value and technological parameter, section value can
Realize the present invention, implementation numerous to list herein.
Claims (4)
1. a kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics, feature
It is, forms general formula are as follows: (Bi1-wMw)(Fe1-tMe”'t)O3-xBaTiO3+yBi(Me'0.5Me”0.5)O3+zBi(Zn0.5Ti0.5)
O3+uNdCoO3+mP+nMnCO3, wherein x, y, z, u, t, m, n, w indicate molar fraction, 0 < x≤0.4,0≤y≤0.1,0 < z <
0.05,0≤u≤0.1,0 < m≤0.1,0 < n≤0.1,0≤w≤0.1,0≤t≤0.1, M is one in La, Er, Sm, Gd in formula
Kind or it is several, Me " ' is one or more of trivalent metallic element Sc, In, Co and Ga, Me' be tetravalent metal elements Zr, Sn,
One of Ti, Ge and Hf, Me " are one of divalent metal element Ni, Mg, Zn, Sr, Pd, and wherein P is B2O3、Li2CO3、
V2O5、CuO、CeO2、LiBiO3、Ba(Cu1/3Nb2/3)O3、Ba(W0.5Cu0.5)O3One of or a variety of sintering aids combination,
And it must wherein contain Li2CO3。
2. bismuth ferrite-barium phthalate base high-temp leadless according to claim 1 with low-dielectric loss and high-temperature stability
The preparation method of piezoelectric ceramics, it is characterized in that: preparation method includes the following steps:
(1) ingredient is carried out according to the component ratio of formula shown in composition general formula;
(2) it is medium by mixed-powder ball milling 24 hours of step (1) using dehydrated alcohol, in drying in 100 DEG C/6 hours, is put into height
Aluminium crucible and compacting covers, and places into Muffle furnace with the heating rate of 250 DEG C/h to 800 DEG C, keeps the temperature 4 hours and synthesizes, and drops
Temperature is taken out after being cooled to 200 DEG C or less;
(3) powder by step (2) synthesis carries out secondary ball milling 24 hours by medium of dehydrated alcohol, takes out drying;
(4) solution that mass percent concentration is 5%PVA is added in the powder after drying to be granulated, in punching block under 100MPa
Compression moulding, mold interior diameter are 1cm;
(5) molding plain piece is to slowly warm up to 600 DEG C in tube furnace with the heating rate of 30 DEG C/h, keeps the temperature dumping for 24 hours, then
With the heating rate of 20 DEG C/min to 980-1000 DEG C, 120min is kept the temperature, furnace cooling is then powered off;
(6) sintered sample is processed into two sides is smooth, thin slice of thickness 1mm, drapes over one's shoulders silver electrode, after 600 DEG C/30min silver ink firing
It is spare;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, 150 DEG C of temperature, the time 30 minutes,
Electric field is kept to be cooled to room temperature.
3. a kind of bismuth ferrite with low-dielectric loss and high-temperature stability-barium phthalate base high-temp leadless piezoelectric ceramics, feature
It is, forms general formula are as follows: (Bi1-wMw)(Fe1-tMe”'t)O3-xBaTiO3+yBi(Me”2/3M'1/3)O3+zBi(Zn0.5Ti0.5)
O3+uNdCoO3+mP+nMnCO3, wherein x, y, z, u, m, n, t, w indicate molar fraction, 0 < x≤0.4,0≤y≤0.1,0 < z <
0.05,0≤u≤0.1,0 < m≤0.1,0 < n≤0.1,0≤w≤0.1,0≤t≤0.1, M is one in La, Er, Sm, Gd in formula
Kind or it is several, Me " ' is one or more of trivalent metallic element Sc, In, Co and Ga, Me " be divalent metal element Ni, Mg,
One of Zn, Sr, Pd, one of M' Nb, Ta, Sb, wherein P is B2O3、Li2CO3、V2O5、CuO、CeO2、LiBiO3、Ba
(Cu1/3Nb2/3)O3、Ba(W0.5Cu0.5)O3One of or a variety of sintering aids combination, and must wherein contain Li2CO3。
4. bismuth ferrite-barium phthalate base high-temp leadless according to claim 3 with low-dielectric loss and high-temperature stability
The preparation method of piezoelectric ceramics, it is characterized in that: preparation method includes the following steps:
(1) ingredient is carried out according to the component ratio of formula shown in composition general formula;
(2) it is medium by mixed-powder ball milling 24 hours of step (1) using dehydrated alcohol, in drying in 100 DEG C/6 hours, is put into height
Aluminium crucible and compacting covers, and places into Muffle furnace with the heating rate of 250 DEG C/h to 800 DEG C, keeps the temperature 4 hours and synthesizes, and drops
Temperature is taken out after being cooled to 200 DEG C or less;
(3) powder by step (2) synthesis carries out secondary ball milling 24 hours by medium of dehydrated alcohol, takes out drying;
(4) solution that mass percent concentration is 5%PVA is added in the powder after drying to be granulated, in punching block under 100MPa
Compression moulding, mold interior diameter are 1cm;
(5) molding plain piece is to slowly warm up to 600 DEG C in tube furnace with the heating rate of 30 DEG C/h, keeps the temperature dumping for 24 hours, then
With the heating rate of 20 DEG C/min to 980-1000 DEG C, 120min is kept the temperature, furnace cooling is then powered off;
(6) sintered sample is processed into two sides is smooth, thin slice of thickness 1mm, drapes over one's shoulders silver electrode, after 600 DEG C/30min silver ink firing
It is spare;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, 150 DEG C of temperature, the time 30 minutes,
Electric field is kept to be cooled to room temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910582277.2A CN110272270B (en) | 2019-07-01 | 2019-07-01 | Bismuth ferrite-barium titanate-based high-temperature lead-free piezoelectric ceramic with low dielectric loss and high-temperature stability and preparation method thereof |
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