CN104402425B - A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic - Google Patents

A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic Download PDF

Info

Publication number
CN104402425B
CN104402425B CN201410691071.0A CN201410691071A CN104402425B CN 104402425 B CN104402425 B CN 104402425B CN 201410691071 A CN201410691071 A CN 201410691071A CN 104402425 B CN104402425 B CN 104402425B
Authority
CN
China
Prior art keywords
preparation
loss
temperature
piezoelectric ceramic
bimno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410691071.0A
Other languages
Chinese (zh)
Other versions
CN104402425A (en
Inventor
杨华斌
周沁
刘慧�
李晓宁
王运风
粟航
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guilin University of Electronic Technology
Original Assignee
Guilin University of Electronic Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Electronic Technology filed Critical Guilin University of Electronic Technology
Priority to CN201410691071.0A priority Critical patent/CN104402425B/en
Publication of CN104402425A publication Critical patent/CN104402425A/en
Application granted granted Critical
Publication of CN104402425B publication Critical patent/CN104402425B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a kind of low-loss BiFeO3‑BaTiO3Based leadless piezoelectric ceramics and preparation method thereof, its composition formula is: (1x)(Bi1‑t La t )FeO3xBa(Ti1‑u Sn u )O3+0.5%BiMnO3+yBa(Cu1/3Nb2/3)O3+zLiBiO3+mBa(W1/2Cu1/2)O3, whereintxu、y、z、mExpression molar fraction, and 0 <t≤ 0.02,0.15≤x≤ 0.30,0 <u<0.05,0<y<0.05,0<z< 0.05,0 <m<0.05.The technology such as the operations such as its preparation method includes by forming formula dispensing, ball milling, molding element sheet, binder removal, sintering, use and reduce sintering temperature, rapid temperature rise and drop, hyperbaric oxygen, reduce Bi element evaporation, suppression Lacking oxygen generation, prevent Fe in temperature-fall period3+Ion appraises at the current rate, thus reduces the purpose of dielectric loss, has prepared the dielectric loss high-temp leadless piezoelectric ceramics less than 0.5%, has made this system can be applied to high-temperature piezoelectric field.

Description

A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic
Technical field
The present invention relates to the preparation method of a kind of leadless piezoelectric ceramics, under the conditions of hyperbaric oxygen, specifically use low temperature liquid phase The preparation method of low-loss high-performance bismuth ferrite prepared by Fast Sintering-barium phthalate base high-temp leadless piezoelectric ceramics.
Background technology
Piezoelectric ceramics is at information, laser, navigation, electronic technology, communication, gauge check, Precision Machining and sensing technology etc. High-tech sector is widely used.Bismuth ferrite-Barium metatitanate. system piezoelectric ceramics is because it is unleaded, sintering temperature is low, high-curie temperature, height Depolarization temperature and good piezoelectric property are received of great interest, 2009, Serhiy O. Leontsev and Richard E. Eitel etc. report this system obtainable piezoelectric constant d under sintering condition in oxygen atmosphere33=116pC/N, move back Poling temperature Td=469oThe piezoelectric ceramics of C, but owing to the dielectric loss of this system is the highest, the dielectric loss under 1KHZ is 4.6%, seriously limit the application of its actual development, the most how to reduce the dielectric loss of this system, be that this system is able at high temperature The key technology of field application.
BiFeO3-BaTiO3The dielectric loss of system is mainly caused by the factor of the following aspects: (1) is due to pure BiFeO3Sintering temperature be about 750 degree, and BaTiO3Sintering temperature be about 1450 degree, both reach 700 at differenceoC, Therefore, in order to improve BiFeO3-BaTiO3The consistency of ceramic systems and performance, the sintering temperature of biphase solid solution is 1000oC Above, and Bi element at high temperature highly volatile, hence in so that the stoichiometric proportion of sintered products off-design;(2) Fe3+From Appraising at the current rate, at temperature-fall period, Fe of son3+Ion has part can be transformed into Fe2+Ion.In order to maintain quantivalence to balance, both because of Element all can cause the generation of a large amount of Lacking oxygen, and the dielectric loss finally making sample is higher, polarization difficulty.Therefore this system is at height That temperature and pressure electrical domain is applied it is crucial that how to control the dielectric loss of this system.
Summary of the invention
It is an object of the invention to for BiFeO3-BaTiO3Deficiency existing for system, and a kind of low-loss ferrous acid is provided The preparation method of bismuth-barium titanate base piezoelectric ceramic.Dielectric loss is effectively reduced to less than 1.0% by this piezoelectric ceramic energy, Make it can apply at high-temperature field.
The technical scheme realizing the object of the invention is:
A kind of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic, its composition formula is: (1-x) (Bi1-tLat)FeO3-xBa (Ti1-uSnu)O3+0.5%BiMnO3+yBa(Cu1/3Nb2/3)O3+zLiBiO3+mBa(W1/2Cu1/2)O3, wherein t, x, u, y, z, m table Show molar fraction, and 0 < t≤0.02,0.15≤x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m < 0.05.
The preparation method of a kind of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic, comprises the steps:
(1) with analytical pure Fe2O3、Bi2O3、BaCO3、TiO2、La2O3、SnO2、MnCO3、CuO、WO3、Nb2O5、Li2CO3For Raw material, according to (1-x) (Bi1-tLat)FeO 3-xBa(Ti1-uSnu)O3+ zLiBiO3
+0.5%BiMnO3+yBa(Cu1/3Nb2/3)O3+mBa(W1/2Cu1/2)O3Carry out dispensing (wherein 0 < t≤0.02,0.15 ≤ x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m < 0.05), with dehydrated alcohol for medium ball milling 24 hours, Dried at 100 DEG C/12 hours, sieve, put in high alumina crucible and add a cover, place in airtight oxygen-supplying tube formula stove with 250 DEG C/h's Heating rate to 800 DEG C, the oxygen that adds high pressure, to 20MPa, is incubated synthesis in 4 hours, and cooling down is taken out after less than 200 degree.
(2) (1-x) (Bi step 1 synthesized1-tLat)FeO3-xBa(Ti1-uSnu)O3+0.5%BiMnO3+yBa(Cu1/ 3Nb2/3)O3+zLiBiO3 +mBa(W1/2Cu1/2)O3(wherein 0 < t≤0.02,0.15≤x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m < 0.05) carry out secondary ball milling, with dehydrated alcohol for medium ball milling 24 hours, be dried, sieve;
(3) powder after sieving adds 5%PVA solution pelletize, compressing under 100MPa, in mould in punching block Diameter is about 1cm;
(4) the plain sheet of molding is to slowly warm up to 600 DEG C with the heating rate of 30 DEG C/h, is incubated 6h binder removal, after furnace cooling Take out standby;
(5) the plain sheet of binder removal is directly pushed in 750 degree of tube furnaces leading to pure oxygen, seal, with the intensification of 20 DEG C/min Speed to 840-860 DEG C, oxygenation high pressure is to 20MPa simultaneously, is incubated 30min, blood pressure lowering, opens tube furnace, directly take out sample extremely Air cools down;
(6) sample after sintering is processed into that two sides is smooth, the thin slice of thickness about 1mm, drapes over one's shoulders silver electrode, 600oC/30min After silver ink firing standby;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, temperature 150 DEG C, the time 30 points Clock, keeps electric field to be cooled to room temperature.
The positive effect of the present invention is:
Preparation method of the present invention is successfully on the basis of keeping excellent properties, and (1) reduces burning by adding sintering aid Junction temperature and employing are rapidly heated, and reduce the volatilization in sintering process of the Bi element, it is ensured that the balance of stoichiometric proportion;(2) Use hyperbaric oxygen condition, the generation of suppression Lacking oxygen;(3) use the sintering technology of chilling, and use element doping inhibition of sintering Fe in knot temperature-fall period3+Ion transit is Fe2+Ion, the generation of suppression Lacking oxygen.By the combination of these three technology, will be situated between Electrical loss is down to can be less than the 1.0% of high-temperature field application, and this is for BiFeO3-BaTiO3For system piezoelectric ceramics, from Technically see there is important breakthrough and technical innovation, and there is practicality.
Detailed description of the invention
Embodiment 1:
Composition formula: 0.75 (Bi0.99La0.01)FeO3-0.25Ba(Ti0.98Sn0.02)O3-0.5%BiMnO3+ 0.6% LiBiO3+0.6%Ba(Cu1/3Nb2/3)O3+0.5% Ba(W1/2Cu1/2)O3, preparation method comprises the steps:
(1) with analytical pure Fe2O3、Bi2O3、BaCO3、TiO2、La2O3、SnO2、MnCO3、CuO、WO3、Nb2O5、Li2CO3For Raw material, according to 0.75 (Bi0.99La0.01)FeO3-0.25Ba(Ti0.98Sn0.02)O3-
0.5%BiMnO3+0.8%LiBiO3+0.6%Ba(Cu1/3Nb2/3)O3+0.5% Ba(W1/2Cu1/2)O3, carry out dispensing, With dehydrated alcohol for medium ball milling 24 hours, dried at 100 DEG C/12 hours, sieve, put in high alumina crucible and add a cover, place into With the heating rate to 800 DEG C of 250 DEG C/h in airtight oxygen-supplying tube formula stove, the oxygen that adds high pressure, to 20MPa, is incubated synthesis in 4 hours, and drops Temperature is taken out after being cooled to less than 200 degree.
(2) 0.75 (Bi step 1 synthesized0.99La0.01)FeO3-0.25Ba(Ti0.98Sn0.02)O3-0.5%BiMnO3+ 0.8%LiBiO3+0.6%Ba(Cu1/3Nb2/3)O3+0.5% Ba(W1/2Cu1/2)O3Carry out secondary ball milling, with dehydrated alcohol as medium Ball milling 24 hours, is dried;
(3) powder after sieving adds 5%PVA solution pelletize, compressing under 100MPa, in mould in punching block Diameter is about 1cm;
(4) the plain sheet of molding is to slowly warm up to 600 DEG C with the heating rate of 30 DEG C/h, is incubated 6h binder removal, after furnace cooling Take out standby;
(5) the plain sheet of binder removal is directly pushed in 750 degree of tube furnaces leading to pure oxygen, seal, with the intensification of 20 DEG C/min Speed is rapidly heated 860 DEG C, and oxygenation high pressure is to 20MPa simultaneously, is incubated 30min, blood pressure lowering, opens tube furnace, directly take out sample Product cool down to air;
(6) sample after sintering is processed into that two sides is smooth, the thin slice of thickness about 1mm, drapes over one's shoulders silver electrode, 600oC/30min After silver ink firing standby;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, temperature 150 DEG C, the time 30 points Clock, keeps electric field to be cooled to room temperature.
Performance measurements is as follows:
d33(pC/N) Qm kp εr tanδ(%)
161 43.2 0.31 788 0.913
Embodiment 2:
Composition: 0.75 (Bi0.99La0.01)FeO3-0.25Ba(Ti0.99Sn0.01)O3-0.5%BiMnO3+0.6%LiBiO3+
0.6%Ba(Cu1/3Nb2/3)O3+0.8% Ba(W1/2Cu1/2)O3
Preparation method is with embodiment 1.
Performance measurements is as follows:
d33(pC/N) Qm kp εr tanδ(%)
157 41 0.30 764 0.961
Embodiment 3:
Composition: 0.75 (Bi0.99La0.01)FeO3-0.25Ba(Ti0.99Sn0.01)O3-0.5%BiMnO3+ 0.8%LiBiO3+
0.6%Ba(Cu1/3Nb2/3)O3+1.0% Ba(W1/2Cu1/2)O3Preparation method, with embodiment 1, except for the difference that sinters temperature 850 DEG C/4h of degree
Performance measurements is as follows:
d33(pC/N) Qm kp εr tanδ(%)
138 37 0.296 730 0.984
Embodiment 4:
Composition: 0.80 (Bi0.99La0.01)FeO3-0.20Ba(Ti0.98Sn0.02)O3-0.5%BiMnO3+0.8%LiBiO3+
0.9%Ba(Cu1/3Nb2/3)O3+1.0% Ba(W1/2Cu1/2)O3
Preparation method with embodiment 1, except for the difference that sintering temperature 840 DEG C.
Performance measurements is as follows:
d33(pC/N) Qm kp εr tanδ(%)
136 29 0.25 429 0.99
The bound of the composition cited by the present invention, interval value and the bound of technological parameter, interval value can Realize the present invention, enforcement numerous to list herein.

Claims (2)

1. low-loss bismuth ferrite-barium titanate base piezoelectric ceramic, is characterized in that: its composition formula is: (1-x) (Bi1-tLat) FeO3-xBa(Ti1-uSnu)O3+0.5%BiMnO3+yBa(Cu1/3Nb2/3)O3+zLiBiO3+mBa(W1/2Cu1/2)O3, wherein t, x, U, y, z, m represent molar fraction, and 0 < t≤0.02,0.15≤x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m<0.05。
2. a preparation method for low-loss bismuth ferrite-barium titanate base piezoelectric ceramic, is characterized in that: comprise the steps:
(1) with analytical pure Fe2O3、Bi2O3、BaCO3、TiO2、La2O3、SnO2、MnCO3、CuO、WO3、Nb2O5、Li2CO3For raw material, According to (1-x) (Bi1-tLat)FeO 3-xBa(Ti1-uSnu)O3+ zLiBiO3
+0.5%BiMnO3+yBa(Cu1/3Nb2/3)O3+mBa(W1/2Cu1/2)O3Carry out dispensing, with dehydrated alcohol for medium ball milling 24 Hour, dried at 100 DEG C/12 hours, sieve, put in high alumina crucible and add a cover, place in airtight oxygen-supplying tube formula stove with 250 DEG C/heating rate to 800 DEG C of h, the oxygen that adds high pressure, to 20MPa, is incubated synthesis in 4 hours, and cooling down takes after less than 200 degree Go out, wherein 0 < t≤0.02,0.15≤x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m < 0.05;
(2) (1-x) (Bi step 1 synthesized1-tLat)FeO3-xBa(Ti1-uSnu)O3+0.5%BiMnO3+yBa(Cu1/3Nb2/3) O3+ zLiBiO3 + mBa(W1/2Cu1/2)O3Carry out secondary ball milling, with dehydrated alcohol for medium ball milling 24 hours, be dried, sieve, Wherein 0 < t≤0.02,0.15≤x≤0.30,0 <u < 0.05,0 < y < 0.05,0 < z < 0.05,0 < m < 0.05;
(3) powder after sieving adds 5%PVA solution pelletize, compressing under 100MPa in punching block, mould interior diameter It is about 1cm;
(4) the plain sheet of molding is to slowly warm up to 600 DEG C with the heating rate of 30 DEG C/h, is incubated 6h binder removal, takes out after furnace cooling Standby;
(5) the plain sheet of binder removal is directly pushed in 750 degree of tube furnaces leading to pure oxygen, seal, with the heating rate of 20 DEG C/min To 840-860 DEG C, oxygenation high pressure is to 20MPa simultaneously, is incubated 30min, blood pressure lowering, opens tube furnace, directly take out sample to air Middle cooling;
(6) sample after sintering is processed into that two sides is smooth, the thin slice of thickness about 1mm, drapes over one's shoulders silver electrode, 600oAfter C/30min silver ink firing Standby;
(7) piezoelectric ceramic piece of preparation is polarized in silicone oil, polarized electric field 6000V/mm, temperature 150 DEG C, 30 minutes time, Electric field is kept to be cooled to room temperature.
CN201410691071.0A 2014-11-27 2014-11-27 A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic Active CN104402425B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410691071.0A CN104402425B (en) 2014-11-27 2014-11-27 A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410691071.0A CN104402425B (en) 2014-11-27 2014-11-27 A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic

Publications (2)

Publication Number Publication Date
CN104402425A CN104402425A (en) 2015-03-11
CN104402425B true CN104402425B (en) 2016-08-17

Family

ID=52640109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410691071.0A Active CN104402425B (en) 2014-11-27 2014-11-27 A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic

Country Status (1)

Country Link
CN (1) CN104402425B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108947514B (en) * 2018-09-28 2020-03-31 东北大学 Ferroelectric material with excellent temperature stability and preparation method and application thereof
CN109336185A (en) * 2018-12-03 2019-02-15 广东先导稀材股份有限公司 The production method of micron order mangaic acid bismuth meal body
CN109503152B (en) * 2018-12-29 2021-06-15 内蒙古大学 Solid solution film with meta-aggregated particles and preparation method thereof
JP7206941B2 (en) * 2019-01-22 2023-01-18 Tdk株式会社 Piezoelectric composition and piezoelectric element
CN110272286B (en) * 2019-07-23 2020-10-27 中国科学技术大学 Method for improving ferromagnetic and magnetoelectric coupling coefficient of bismuth ferrite-based ceramic
CN111138177A (en) * 2020-01-09 2020-05-12 桂林电子科技大学 Bismuth ferrite-bismuth zinc titanate high-temperature lead-free piezoelectric ceramic with high-temperature stability and preparation method thereof
CN114262225B (en) * 2021-12-29 2022-10-21 湖南省嘉利信陶瓷科技有限公司 High-purity nano electronic ceramic and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102249659A (en) * 2011-06-16 2011-11-23 桂林电子科技大学 Bismuth ferrite-based leadless piezoelectric ceramic with high Curie temperature and preparation method thereof
CN102584194A (en) * 2012-02-14 2012-07-18 桂林电子科技大学 Perovskite leadless piezoelectric ceramic used at high temperature and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102249659A (en) * 2011-06-16 2011-11-23 桂林电子科技大学 Bismuth ferrite-based leadless piezoelectric ceramic with high Curie temperature and preparation method thereof
CN102584194A (en) * 2012-02-14 2012-07-18 桂林电子科技大学 Perovskite leadless piezoelectric ceramic used at high temperature and preparation method thereof

Also Published As

Publication number Publication date
CN104402425A (en) 2015-03-11

Similar Documents

Publication Publication Date Title
CN104402425B (en) A kind of preparation method of low-loss bismuth ferrite-barium titanate base piezoelectric ceramic
CN110272270B (en) Bismuth ferrite-barium titanate-based high-temperature lead-free piezoelectric ceramic with low dielectric loss and high-temperature stability and preparation method thereof
CN102584195B (en) Bismuth-based perovskite type leadless piezoelectric ceramic and low-temperature preparation method thereof
CN102249659B (en) Bismuth ferrite-based leadless piezoelectric ceramic with high Curie temperature and preparation method thereof
CN110128126B (en) Bismuth ferrite-barium titanate-zinc bismuth titanate-bismuth aluminate high-temperature lead-free piezoelectric ceramic and preparation method thereof
CN102659404A (en) Plumbum niobate-nicklate (PNN)-plumbum zirconate titanate (PZT) piezoelectric ceramic capable of being sintered at low temperature and preparation method thereof
CN103833354B (en) A kind of solid solution modification metatitanic acid bismuth sodium system leadless piezo-electric ceramic and preparation method thereof
CN102285792B (en) Lead-free piezoelectric ceramic with perovskite structure
CN110128127A (en) A kind of bismuth ferrite with high tension performance and high-temperature stability-barium titanate-based lead-free piezoelectric ceramics and preparation method thereof
CN110128128B (en) Bismuth ferrite-bismuth aluminate-bismuth zinc titanate high-temperature piezoelectric ceramic with zero temperature coefficient and high-temperature stability and preparation method thereof
Zhou et al. A novel thermally stable low-firing LiMg4V3O12 ceramic: sintering characteristic, crystal structure and microwave dielectric properties
CN104387049B (en) A kind of leadless piezoelectric ceramics and low-temp liquid-phase sintering preparation method thereof
Lu et al. Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8 ceramics doped with ZnO–La2O3–B2O3 glass
CN102320828A (en) Unleaded piezoelectric ceramic consisting of B-site composite Bi-based compound and preparation method thereof
Gai et al. The effect of (Li, Ce) doping in aurivillius phase material Na0. 25K0. 25Bi4. 5Ti4O15
CN103880416B (en) Preparation method for sintering sodium bismuth titanate-based lead-free piezoelectric ceramics at low temperature
Pei et al. Low temperature sintering and microwave dielectric properties of Li2MgTiO4-based temperature stable ceramics
CN103951414A (en) Method for manufacturing ceramic material with low dielectric loss, large capacitivity and varistor characteristics
CN102285794A (en) Lead-free piezoelectric ceramic composed of B-site complex perovskite-structured compounds
Chou et al. Preparation and dielectric properties of B2O3–Li2O-doped BaZr0. 35Ti0. 65O3 ceramics sintered at a low temperature
CN101747038B (en) High-performance K0.5Na0.5NbO3-LiSbO3-BiScO3 leadless piezoelectric ceramics
Zhang et al. Effects of glass additions on high pyroelectric response of low-temperature sintered Pb0. 87Ba0. 1La0. 02 (Zr0. 7Sn0. 24Ti0. 06) O3 antiferroelectric ceramics
CN104671777B (en) One is provided simultaneously with multi-functional lead-free ceramicses such as high electric field induced strain, high energy storage density and high stable dielectric properties and preparation method thereof
CN103159475B (en) Leadless piezoelectric ceramic composed of B-bit composite Bi-based compound and preparation method thereof
Fang et al. Microwave dielectric properties and compatibility with silver of low-fired Li2Cu0. 1Zn0. 9Ti3O8 ceramic

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant