CN110272017A - A method of preparing 3-dimensional metal micro-nano structure - Google Patents
A method of preparing 3-dimensional metal micro-nano structure Download PDFInfo
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- CN110272017A CN110272017A CN201910583055.2A CN201910583055A CN110272017A CN 110272017 A CN110272017 A CN 110272017A CN 201910583055 A CN201910583055 A CN 201910583055A CN 110272017 A CN110272017 A CN 110272017A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
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Abstract
The present invention relates to micro-nano structure preparation fields, and in particular to a method of 3-dimensional metal micro-nano structure is prepared, main preparation step includes coating photoresist, electron beam exposure, developing fixing, evaporation metal material and stripping photoresist.It only needs to expose once in preparation process, vapor deposition can once prepare double-level-metal micro-nano structure, and the parameter of the structure can be adjusted by the dosage of electron beam.The preparation method is easy to operate, avoids the process that multilayered structure needs alignment for preparing.
Description
Technical field
The present invention relates to micro-nano structure preparation fields, and in particular to a method of prepare 3-dimensional metal micro-nano structure.
Background technique
With the fast development of nano science, nano material and device have been commonly utilized in the every field of human lives,
Such as electronics, bio-sensing, semiconductor chip, optics new material and bio-medical multiple fields.However, any nano material
Application in these fields must all rely on nanofabrication technique, i.e., to the manipulation of material and processing within the scope of nanoscale
Technology.Therefore, the nanofabrication technique that development nano material and the efficient of device, high-resolution, low consumption produce, which has become, to be received
One focus of rice science and technology.
Mainly there are ultraviolet photolithographic, electron beam to expose in the world in terms of carrying out the research of nanoelectronics and nano-device at present
Light technology (EBL), X X-ray lithography X (X-ray Lithograph), focused ion beam technology (FIB), nano impression (NIL)
Deng.Wherein electron beam lithography progresses into each research application field as a kind of very promising micro-nano technology means,
And cause the interest and concern of more and more related scientific research workers.
3-dimensional metal micro-nano structure is prepared with electron beam lithography at present, needs multiple exposure, and second layer structure
It needs with lithography is covered, the requirement to precision is relatively high, and preparation difficulty is larger, and preparation flow is more.
Summary of the invention
Alignment is needed in order to solve the 3-dimensional metal micro-nano structure existing in the prior art for preparing, multiple exposure is repeatedly plated
Film, the problem of preparation process complexity, the present invention provides a kind of method for preparing 3-dimensional metal micro-nano structure, which passes through one
Secondary exposure and plated film can prepare 3-dimensional metal micro-nano structure, moreover, preparation precision is high.
The technical problem to be solved in the present invention is achieved through the following technical solutions: a kind of 3-dimensional metal micro-nano structure of preparing
Method, comprising the following steps:
Prepare substrate of glass: preparing substrate of glass and clean drying；
Coating photoresist: two layers of positive photoresist is got rid of on the surface of the substrate of glass with photoresist spinner；
Electron beam exposure structure graph: rectangular periodic array structure is designed with pattern generator；Setting regions is exposed with electron beam
Light, electron-beam dose used are the first dosage；
Etching；Two layers of positive photoresist is performed etching respectively, required electron-beam dose is respectively the second dosage and third dosage；
Developing fixing；
Evaporation metal: using electron beam vacuum vapor plating instrument evaporation metal material, forms metal material layer.
Except glue: the substrate of glass that metal has been deposited is put into acetone soln except glue.
Further, coat photoresist the specific steps are with photoresist spinner, spin coating solid content is on the glass substrate first
4% positive photoresist, drying form the first film；The positive photoresist that one layer of solid content of spin coating is 2% again, drying form the second film.
Further, the coating photoresist, the first film are identical as the first film thickness.
Further, the photoresist spinner revolving speed is 1000rpm ~ 6000rpm, and the time is set as 60s.
Further, the thickness of the metal material layer of the electron beam evaporation deposition instrument vapor deposition is greater than the first film thickness.
Further, first dosage is between second dosage and the third dosage.Further, described
Metal material layer is made of precious metal material.
Compared with prior art, beneficial effects of the present invention:
(1) the embodiment of the present application preparation method prepares 3-dimensional metal micro-nano structure, does not need to carry out alignment, by single exposure and
Vapor deposition can be obtained by 3-dimensional metal micro-nano structure, and the preparation process is simple and easy to operate.
(2) the 3-dimensional metal micro-nano structure of the embodiment of the present application preparation method preparation is, it can be achieved that wideband transmits phenomenon.
(3) thickness of the embodiment of the present application preparation method upper and lower structures can pass through the thickness of evaporation thickness and spin coating glue
It adjusts, adjusts the thickness of three-dimensional chiral structure, may be implemented to adjust transmissivity；
(4) the embodiment of the present application preparation method can prepare three-dimensional chiral micro-nano metal structure by the direction of control plated film,
The circular dichroism of structure is realized, and it is possible to which the thickness of evaporation thickness and spin coating glue adjusts 3-dimensional metal by the direction of vapor deposition
The circular dichroism of micro-nano structure.
Detailed description of the invention
Fig. 1 is to prepare 3-dimensional metal micro-nano structure by the preparation method of the double-deck chiral structure in the embodiment of the present application 1
Main view；
Fig. 2 is the rectangular Periodic array structure designed in the embodiment of the present application 1 with pattern generator；
Fig. 3 is the schematic diagram in the embodiment of the present application 1 after whirl coating；
Wherein, in Fig. 1: 11, the second film；12, the first film；2, metal material layer；3, substrate of glass.
Specific embodiment
Alignment is needed in order to solve the 3-dimensional metal micro-nano structure existing in the prior art for preparing, multiple exposure is repeatedly plated
Film, the problem of preparation process complexity, the present invention provides a kind of method for preparing 3-dimensional metal micro-nano structure, which passes through one
Secondary exposure and plated film can prepare 3-dimensional metal micro-nano structure, moreover, preparation precision is high.
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment 1:
Step 1: preparing substrate of glass 3, prepares substrate of glass 3 and cleans stand-by；
Specifically:
Substrate of glass 3 is specially ito glass substrate, is prepared with a thickness of 1.0mm, length and width dimensions are the ITO of 30.0mm × 30.0mm
Substrate of glass 3, and the ito glass of preparation is put into cleaning solution and is cleaned, it is super with acetone after deionized water ultrasound 5-10min
Sound 5-10min, then with alcohol ultrasound 5-10min, be put into after finally being dried up with nitrogen gun spare in nitrogen cabinet.
Step 2: two layers of positive photoresist coating photoresist: is got rid of on the surface of the substrate of glass with photoresist spinner；Electron beam
Exposure structure figure: rectangular periodic array structure is designed with pattern generator；Setting regions is exposed with electron beam, electronics used
Beam dose is the first dosage；
Developing fixing；
Evaporation metal: using electron beam vacuum vapor plating instrument evaporation metal material, forms metal material layer.
Except glue: the substrate of glass that metal has been deposited is put into acetone soln except glue.Photoetching is coated in substrate of glass 3
Glue gets rid of two layers of positive photoresist on the surface of the substrate of glass 3 with photoresist spinner, forms the first film 12 and the second film 11.
Specifically:
The whirl coating the specific steps are revolved in ito glass substrate 3 with photoresist spinner first in ready substrate of glass 3
The positive photoresist that solid content is 4% is applied, drying forms the first film 12, then the positive photoresist that one layer of solid content of spin coating is 2%, and drying forms the
Two films 11.Positive photoresist is coated, two layers of thickness is identical, i.e., the first film 12 is identical as the thickness of the second film 11, such as
Shown in Fig. 3.The photoresist spinner revolving speed is 1000rpm ~ 6000rpm, and the time is set as 60s.The temperature dried twice is 150 DEG C,
Time is 3min, and hot plate is placed on ultra-clean indoor ventilation, and dust granules are few herein, are conducive to the volatilization of organic matter, hot plate
Temperature accuracy be ± 1 DEG C.
Step 3: rectangular periodic array knot is designed with pattern generator, as shown in Figure 2；Setting regions is exposed with electron beam
Light；Etching；Two layers of positive photoresist is performed etching respectively, required electron-beam dose is respectively the second dosage and third dosage；
Specifically:
First dosage is between second dosage and the third dosage.
Step 4: developing fixing；
Step 5: evaporation metal: electron beam vacuum vapor plating instrument evaporation metal material layer 2 is used, as shown in Figure 1；
Specifically:
The vacuum degree of electron beam vacuum evaporating coating machine is close to 3 × 10-6Start to be deposited when torr, the electron beam evaporation deposition
The thickness of the metal material layer 2 of instrument vapor deposition is greater than the thickness of the first film 12.The metal material layer 2 is by precious metal material system
At, such as gold or silver.
Step 6: it removes glue: the ito glass substrate 3 that metal has been deposited being put into the acetone soln refrigerated except glue.
Specifically:
The ito glass that metal has been deposited is put into the acetone soln of refrigeration except glue, at least 30min is blown after taking-up with nitrogen gun
Dry substrate obtains 3-dimensional metal micro-nano structure.
Embodiment 2:
3-dimensional metal micro-nano structure manufactured in the present embodiment only changes the metal material layer that electron beam evaporation deposition instrument is vertically deposited
3 thickness, preparation process and embodiment 1 are all the same.
Specifically:
When coating positive photoresist on the surface of the substrate with photoresist spinner, the revolving speed of photoresist spinner is controlled, and then can control
The thickness of positive photoresist, the photoresist spinner revolving speed are set as 1000rpm ~ 6000rpm, and the time is set as 60s.The coating light
Photoresist the specific steps are the positive photoresist that spin coating solid content is 4% in ito glass substrate 3 with photoresist spinner first, drying forms the
One film 12, then the positive photoresist that one layer of solid content of spin coating is 2%, drying form the second film 11.
The 3-dimensional metal micro-nano structure of the embodiment of the present application preparation method preparation is thin by control the first film 12 and second
The thickness of film 11 can adjust the thickness of three-dimensional chiral structure, and then may be implemented the regulation of transmissivity；
Embodiment 3:
3-dimensional metal micro-nano structure manufactured in the present embodiment only changes the metal material layer 3 of electron beam evaporation deposition instrument vapor deposition
Angle, preparation process and embodiment 1 are all the same.
Specifically:
In evaporation metal material 3 vertical using electron beam vacuum vapor plating instrument, by tilting evaporation metal material layer 3, electricity
The thickness of the metal material of beamlet evaporation coating instrument vapor deposition is greater than the thickness of the first film 12, as shown in Figure 1.Evaporation coating it
Afterwards, stripping photolithography adhesive process is carried out, with the ito glass after acetone soak evaporation metal, dissolves the first film 12 and the second film
11, soaking time at least 30min.Substrate is dried up with nitrogen gun later, obtains three-dimensional chiral metal micro-nano structure.
The 3-dimensional metal micro-nano structure of the present embodiment preparation method preparation can be made by the direction of control plated film
Standby chiral micro-nano metal structure three-dimensional out, realizes the circular dichroism of structure, and it is possible to by the direction of vapor deposition, evaporation thickness
The circular dichroism of 3-dimensional metal micro-nano structure is adjusted with the thickness of spin coating glue.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (7)
1. a kind of method for preparing 3-dimensional metal micro-nano structure, which comprises the following steps:
Prepare substrate of glass: preparing substrate of glass and clean drying；
Coating photoresist: two layers of positive photoresist is got rid of on the surface of the substrate of glass with photoresist spinner；
Electron beam exposure structure graph: rectangular periodic array structure is designed with pattern generator；Setting regions is exposed with electron beam
Light, electron-beam dose used are the first dosage；
Etching；Two layers of positive photoresist is performed etching respectively, required electron-beam dose is respectively the second dosage and third dosage；
Developing fixing；
Evaporation metal: using electron beam vacuum vapor plating instrument evaporation metal material, forms metal material layer；
Except glue: the substrate of glass that metal has been deposited is put into acetone soln except glue.
2. the method according to claim 1 for preparing 3-dimensional metal micro-nano structure, which is characterized in that coat the tool of photoresist
Body step is, first with the photoresist spinner positive photoresist that spin coating solid content is 4% on the glass substrate, drying, formation the first film；It revolves again
The positive photoresist that one layer of solid content is 2% is applied, drying forms the second film.
3. the method according to claim 2 for preparing 3-dimensional metal micro-nano structure, which is characterized in that the coating photoetching
Glue, the first film are identical as the first film thickness.
4. the method according to claim 3 for preparing 3-dimensional metal micro-nano structure, which is characterized in that the photoresist spinner revolving speed
For 1000rpm ~ 6000rpm, the time is set as 60s.
5. the method according to claim 1 for preparing 3-dimensional metal micro-nano structure, which is characterized in that first dosage is situated between
Between second dosage and the third dosage.
6. the method according to claim 4 for preparing 3-dimensional metal micro-nano structure, it is characterised in that the electron beam evaporation
The thickness of the metal material layer of plated film instrument vapor deposition is greater than the first film thickness.
7. the method according to claim 6 for preparing 3-dimensional metal micro-nano structure, which is characterized in that the metal material
Layer is made of precious metal material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910583055.2A CN110272017A (en) | 2019-07-01 | 2019-07-01 | A method of preparing 3-dimensional metal micro-nano structure |
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| CN201910583055.2A CN110272017A (en) | 2019-07-01 | 2019-07-01 | A method of preparing 3-dimensional metal micro-nano structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110865428A (en) * | 2019-11-28 | 2020-03-06 | 陕西师范大学 | Preparation of strong-induction CD structure and preparation method thereof |
-
2019
- 2019-07-01 CN CN201910583055.2A patent/CN110272017A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110865428A (en) * | 2019-11-28 | 2020-03-06 | 陕西师范大学 | Preparation of strong-induction CD structure and preparation method thereof |
| CN110865428B (en) * | 2019-11-28 | 2021-08-24 | 陕西师范大学 | Preparation of strong-induction CD structure and preparation method thereof |
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