CN108828900A - Preparation method of double-layer rectangular hole micro-nano structure - Google Patents
Preparation method of double-layer rectangular hole micro-nano structure Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 63
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims description 50
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 49
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 48
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 238000002474 experimental method Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 3
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 54
- 230000000694 effects Effects 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004925 denaturation Methods 0.000 description 5
- 230000036425 denaturation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000009897 systematic effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002983 circular dichroism Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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Abstract
The invention relates to the technical field of micro-nano optics, in particular to a preparation method of a double-layer rectangular hole micro-nano structure, which solves the problem that the position between two rectangular holes of the double-layer rectangular hole micro-nano structure in the prior art is difficult to completely calibrate.
Description
Technical field
The invention belongs to micronano optical technical fields, and in particular to a kind of preparation method of bilayer rectangular opening micro-nano structure.
Background technique
Natural chiral molecule is widely used in biomedicine field, but the signal of natural chiral molecule is very weak, this is just
Very big obstacle is caused with utilization to the further research of natural chiral molecule.Currently, the detection of natural chiral molecule is main
It is to be detected by asymmetric transmission (AsymmetricTransmission, the AT) signal of the molecule, but due to natural
The chirality of chiral molecules is very weak, so its asymmetric transmission signal is also very faint, detection difficulty is larger.Solution at present
Mainly increased in conjunction with natural chiral molecule by the strong artificial metal's micro-nano structure of preparation asymmetric transmission Benefit Transfer
Its chiral signal.
Artificial metal's micro-nano structure is divided into planar structure, double-layer structure and multilayered structure, planar junction structure according to its structure
It is standby simple, but AT signal is also most weak;Double-deck and multilayered structure AT signal is strong, but prepares complicated.Single layer hole crack structure is that comparison is normal
A kind of basic structure seen, research find to combine two rectangle pore structures up and down, using the coupling of two interlayers, can achieve grade
Join the effect of amplification, especially when the rectangular opening face on double-layer structure, the AT signal of the structure can reach maximum, AT=
39%.Since current technology limits, which mainly also rests on theoretical research stage, is primarily due to the structure and is preparing
It needs to be exposed two single layer structures respectively in the process, then again precisely be combined two layers of nanostructure, because of the knot
Structure sheet is as nanometer scale, when carrying out double-layer nanostructured combination, due to the limitation of accuracy of instrument and systematic error, and upper and lower two
The rectangular opening of layer is difficult to calibrate completely, and error is larger, is extremely difficult to the theoretical value of structure AT signal, this just gives practical preparation to answer
With very big difficulty is caused, limit to its further research and application.
Summary of the invention
It is difficult completely to solve position between double-deck rectangular opening two layers of rectangular opening of micro-nano structure existing in the prior art
The problem of calibration, the present invention provides a kind of preparation methods of double-deck rectangular opening micro-nano structure, use and first coat PMMA photoetching
Glue, then exposes rectangle hole pattern in design configuration, and developed fixing erodes the PMMA photoresist except unexposed portion, leaves
The PMMA rubber column gel column of rectangle hole shape after exposure denaturation, each nanometer layer is deposited in the substrate containing rubber column gel column, finally removes glue again
The preparation method of column solves the problems, such as that rectangular opening is difficult to calibrate completely between upper and lower single layer structure, has reached simplified preparation work
Skill reduces preparation difficulty, improves the effect of structure preparation precision.
The technical problem to be solved in the present invention is achieved through the following technical solutions:
A kind of preparation method of bilayer rectangular opening micro-nano structure, includes the following steps:
Step 1, design configuration:The double-deck rectangular opening micro-nano structure figure is designed with pattern generator;
Step 2, prepare substrate:Prepare ito glass substrate and cleans drying;
Step 3, resist coating:PMMA photoresist is coated in the ready ito glass substrate of step 2 with photoresist spinner, with a thickness of
H;
Step 4, it is dried after gluing:The substrate of step 3 coating PMMA photoresist is placed on hot plate and is dried;
Step 5, it exposes:The micro-nano structure rectangle hole pattern designed in electron beam exposure step 1, the substrate after being exposed;
Step 6, develop:Under room temperature, the substrate exposed in step 5 is put into impregnate in developer solution and is developed, it is micro- for obtaining shape
The PMMA rubber column gel column of rectangular opening partial shape in micro-nano structure figure, is highly H;
Step 7, it is fixed:Step 6 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, takes substrate after the completion of fixing
Out, with being dried with nitrogen;
Step 8, it is dried after fixing:Step 7 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries;
Step 9, nickel plating:The substrate dried after step 8 fixing is put into electron beam vacuum evaporating coating machine nickel plating;
Step 10, nanometer layer is deposited:The material and thickness that each nanometer layer is set according to requirement of experiment, obtain in step 9 containing nickel
Layer substrate on by it is lower and on each nanometer layer is successively deposited;
Step 11, PMMA photoresist is removed:Using lift-off technique, the substrate after step 10 vacuum evaporation is steeped in acetone
In, the time is at least 12h, dissolves PMMA rubber column gel column, and each nanometer layer at the top of rubber column gel column is vaporized in step 10 with PMMA photoresist
Dissolution fall off together;
Step 12, it dries up:Micro-nano structure after drying up the removing PMMA photoresist that step 11 obtains with nitrogen gun obtains described double
Layer rectangular opening micro-nano structure.
Further, step 2 concrete operations are:Prepare thick having a size of 20.0mm long × 20.0mm wide × 2.0mm
Ito glass, and the ito glass of preparation is put into cleaning solution and is cleaned, successively use deionized water, acetone and each ultrasound of absolute alcohol
After 15min, then it is cleaned by ultrasonic 5min with deionized water, is put into after finally being dried up with nitrogen gun spare in nitrogen cabinet.
Further, photoresist thickness H is coated in step 3 is greater than the sum of nickel layer and each nanometer layer thickness, and H≤100nm.
Further, in step 3, the revolving speed of the photoresist spinner is 4000rpm, time 60s.
Further, in step 4 and step 8, the temperature of drying is 150 DEG C, time 3min.
Further, in step 3, the PMMA photoresist uses negtive photoresist.
Further, the time that development is impregnated in the step 6 is 60s.
Further, in the step 6 developer solution by two pentanone of tetramethyl and isopropanol with volume ratio be 3:1 cooperation system
At the time for impregnating fixing is 20s.
Further, in step 9, be deposited nickel with a thickness of 5~10nm.
Further, the step 9 and the vacuum degree of vacuum evaporating coating machine in step 10 are not more than 3 × 10-6torr。
Compared with prior art, beneficial effects of the present invention:
(1) preparation method of the double-deck rectangular opening micro-nano structure of the embodiment of the present application is first coated due to using during the preparation process
PMMA photoresist, then the rectangular opening visuals in exposure etching design configuration, developed fixing are eroded except unexposed portion
The PMMA photoresist divided, the PMMA rubber column gel column of the rectangle hole shape after leaving exposure denaturation are deposited each in the substrate containing rubber column gel column
Nanometer layer finally removes the preparation method of rubber column gel column again, needs multiple whirl coating compared to traditional handicraft, then applying electronic beam exposes
Preparation process twice, due to the limitation of current technology and the restriction of systematic error, in double-layer structure combination, be difficult so that on
Lower two layers of rectangular opening is perfectly aligned, and preparation process is complicated, and the requirement to laboratory apparatus and operator is very high, and the application is implemented
Example simplifies preparation process, without the calibration steps of multiple whirl coating, double exposure and precision, solves between upper and lower single layer structure
Rectangular opening is difficult the problem of calibrating completely, has reached simplified preparation process, reduces preparation difficulty, improves the effect of structure preparation precision
Fruit, preparation method is simple, requires operator low, reduction preparation cost.
(2) then each nanometer is deposited using rubber column gel column is first prepared in the preparation method of the embodiment of the present application on the basis of rubber column gel column
Layer, ensure that upper layer and lower layer rectangular opening directly can ensure that the precision of preparation structure with close alignment, to ensure that the knot
The strong asymmetric transmission effect of structure.
(3) preparation method of the embodiment of the present application does not need not needing re-expose compared to traditional preparation methods, only
It needs that each nanometer layer is successively deposited in coating machine, it is not necessary that sample is taken out two exposure of progress during vapor deposition, avoids
Sample is contaminated and is influenced by external condition, to ensure that the cleannes and precision of sample.
(4) the embodiment of the present application substrate is substrate of glass, can facilitate inclination, easily prepare the nanometer of differing tilt angles
Hole configurations irradiates the shadow excited with the rectangular opening of differing tilt angles to AT effect for research incident light in the future from different perspectives
It rings and structure basis is provided, improve the practical application width of the structure.
Detailed description of the invention
Fig. 1 is the double-deck rectangular opening micro-nano structure figure designed in one preparation method of the embodiment of the present application;
Fig. 2 is to coat the structural schematic diagram after photoresist in one preparation method of the embodiment of the present application in substrate;
Fig. 3 is electron beam lithography structural schematic diagram in one preparation method of the embodiment of the present application;
Fig. 4 is to form rubber column gel column structural schematic diagram in one preparation method of the embodiment of the present application after developed fixing;
Fig. 5 is that the structural schematic diagram after nickel and each nanometer layer is deposited in one preparation method of the embodiment of the present application;
Fig. 6 is the double-deck rectangular opening micro-nano structure schematic diagram after one preparation method of the embodiment of the present application removing PMMA photoresist.
Wherein, 1, substrate of glass;21, PMMA photoresist;22, rubber column gel column;3, nickel layer;41, the first nanometer layer;42, it second receives
Rice layer;43, third nanometer layer.
Specific embodiment
It is difficult to calibrate completely to solve two layers of rectangle hole site of the double-deck rectangular opening micro-nano structure existing in the prior art
The problem of, the embodiment of the present application provides a kind of preparation method of double-deck rectangular opening micro-nano structure, uses and first coats PMMA light
Photoresist, then the rectangular opening visuals in exposure etching design configuration, developed fixing are eroded except unexposed portion
PMMA photoresist, the PMMA rubber column gel column of the rectangle hole shape after leaving exposure denaturation, is deposited each nanometer in the substrate containing rubber column gel column
Layer, finally removes the preparation method of rubber column gel column again, solves the problems, such as that rectangular opening is difficult to calibrate completely between upper and lower structures, reaches
Simplified preparation process reduces preparation difficulty, improves the effect of structure preparation precision.
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment 1:
The embodiment of the present application discloses a kind of preparation method of double-deck rectangular opening micro-nano structure, includes the following steps:Design configuration,
Prepare substrate, resist coating, drying, exposure, development, fixing, drying, nickel plating, vapor deposition nanometer layer, removing PMMA photoresist and blows
It is dry.Specifically:
Step 1, design configuration:As shown in Figure 1, designing the double-deck rectangular opening micro-nano structure figure with pattern generator;
Step 2, prepare substrate:Prepare ito glass substrate 1 and cleans drying;
Concrete operations are:Prepare having a size of 20.0mm long × 20.0mm wide × 2.0mm thickness ito glass, and by the ITO glass of preparation
Glass is put into cleaning solution and cleans, and successively with after deionized water, acetone and each ultrasound 15min of absolute alcohol, then uses deionized water
It is cleaned by ultrasonic 5min, is put into after finally being dried up with nitrogen gun spare in nitrogen cabinet.
The present embodiment substrate uses ito glass, and ito glass is electro-conductive glass, and can increase electrode after shaping structures makes
Used time conducting electric current provides necessary condition to regulate and control asymmetric transmission and circular dichroism etc. by electric field.In addition, being exposed in electron beam
When photoengraving, electron beam irradiation is only rectangular opening visuals in structure, and energy comparison aggregation, ito glass has good
Good electric conductivity, the energy efficient of electron beam can be spread out, and avoid partial charge vibration is too drastic perforation etc. is caused to be made
At the failure of an experiment etc..
Step 3, resist coating:PMMA photoresist 21 is coated in the ready ito glass substrate 1 of step 2 with photoresist spinner,
With a thickness of H;
Specifically, the revolving speed of the photoresist spinner is 4000rpm, time 60s.As shown in Fig. 2, in ready substrate of glass 1
The PMMA photoresist 21 of upper coating, in electron beam exposure etching process, electron beam exposes within 100nm away from the distance of object
Light, the embodiment of the present application photoresist thickness H≤100nm.
It coats 21 thickness H of photoresist and is greater than the sum of nickel layer 3 and each nanometer layer thickness, the PMMA photoresist 21 eventually formed is high
Degree is higher than the upper surface of third nanometer layer 43, solvent corrosion space is left to PMMA rubber column gel column 22 is removed in step 11, convenient for subsequent
The cleaning of PMMA rubber column gel column 22 in technique.
The present embodiment PMMA photoresist 21 is preferably negtive photoresist, and negtive photoresist only needs acetone to can dissolve, and the solvent of positive photoresist is prepared
Complexity can clean removal by acetone leaving the poroid rubber column gel column 22 of rectangle after each nanometer layer is deposited, and preparation process is simple and convenient,
It is easy to operate, the operation of experimenter is required low.
Step 4, it is dried after gluing:The substrate 1 of step 3 coating PMMA photoresist 21 is placed on hot plate and is dried, drying
Temperature is 150 DEG C, time 3min.
Step 5, it exposes:As shown in figure 3, adjustment Electron Beam Focusing is ready in step 3 under computer system control
Substrate 1 on, etch rectangular opening visuals in the micro-nano structure figure, the rectangular opening visuals in PMMA photoresist 21
Photoresist occurs denaturation and forms rubber column gel column 22, and the rubber column gel column 22 of formation has different dissolution characteristics from original PMMA photoresist 21, under
It is separated using the deliquescent difference of PMMA rubber column gel column 22 and PMMA photoresist 21 in subsequent technique.
Step 6, develop:Under room temperature, by the substrate 1 exposed in step 5 be put into developer solution impregnate develop, developer solution by
Two pentanone of tetramethyl and isopropanol are with volume ratio for 3:1 cooperation is made, and the time for impregnating development is 60s.
Specifically:Because it is different to expose dissolubility of the PMMA negtive photoresist of front and back in the embodiment of the present application developer, institute
Removal can be dissolved with, the PMMA photoresist 21 of unexposed mistake, and the poroid rubber column gel column 22 of exposed rectangle is retained, i.e.,
The PMMA rubber column gel column 22 that shape as shown in Figure 4 is rectangle hole shape can be obtained, be highly H.
Step 7, it is fixed:By step 6 impregnate development after substrate 1 be put into fixing solution impregnate fixing, impregnate fixing when
Between be 20s, substrate 1 is taken out after the completion of fixing, with being dried with nitrogen.
Step 8, it is dried after fixing:Step 7 is impregnated after being fixed and the substrate 1 of drying is placed on hot plate and dries, drying
Temperature is 150 DEG C, time 3min.
Step 9, nickel plating:The substrate 1 dried after step 8 fixing is put into electron beam vacuum evaporating coating machine nickel plating, to increase
Add the nanometer layer metal of vapor deposition and the adhesiveness of substrate of glass 1.The thickness of the embodiment of the present application vapor deposition nickel layer 3 is preferably 5~
10nm guarantees to avoid influencing the optical characteristics of the structure because nickel layer 3 is blocked up while increasing adhesiveness, causes its asymmetric biography
The decrease of defeated signal.
Step 10, nanometer layer is deposited:The material and thickness that each nanometer layer in nanometer layer is set according to requirement of experiment, in step
9 obtain in the substrate 1 containing nickel layer 3 using vacuum evaporation coating membrane technology by it is lower and on the first nanometer layer 41, second is successively deposited
Nanometer layer 42, third nanometer layer 43, obtain micro-nano structure as shown in Figure 5.
Specifically:The vacuum degree of vacuum evaporating coating machine is not more than 3 × 10 in step 9 and step 10-6torr。
Step 11, PMMA photoresist is removed:Using lift-off technique, the bubble of substrate 1 after step 10 vacuum evaporation is existed
In acetone, the time is at least 12h, dissolves PMMA rubber column gel column 22, and 3 He of nickel layer at 22 top of rubber column gel column is vaporized in step 9 and step 10
Each nanometer layer (the first nanometer layer 41, the second nanometer layer 42, third nanometer layer 43 in non-structural) at the top of rubber column gel column 22 also with
The dissolution of PMMA rubber column gel column 22 falls off together, and the double-deck rectangular opening micro-nano structure as shown in Figure 6 can be obtained.
Step 12, it dries up:Micro-nano structure after drying up the removing PMMA rubber column gel column 22 that step 11 obtains with nitrogen gun, obtains institute
State the double-deck rectangular opening micro-nano structure.
The preparation method of the double-deck rectangular opening micro-nano structure of the present embodiment is first coated due to using during the preparation process
PMMA photoresist 21, then the rectangular opening visuals in exposure etching design configuration, developed fixing are eroded except unexposed
Partial PMMA photoresist 21, the PMMA rubber column gel column 22 of the rectangle hole shape after leaving exposure denaturation, in the substrate 1 containing rubber column gel column 22
Upper each nanometer layer of vapor deposition, finally removes the preparation method of rubber column gel column 22 again, needs multiple whirl coating compared to traditional handicraft, then applies
The preparation process of electron beam exposure twice, due to the limitation of current technology and the restriction of systematic error, in double-layer structure combination,
It is difficult so that upper layer and lower layer rectangular opening is perfectly aligned, preparation process is complicated, and the requirement to laboratory apparatus and operator is very high,
The embodiment of the present application simplifies preparation process, without the calibration steps of multiple whirl coating, double exposure and precision, solves and places an order
Rectangular opening is difficult the problem of calibrating completely between layer structure, has reached simplified preparation process, reduces preparation difficulty, improves structure system
The effect of standby precision, preparation method is simple, requires operator low, reduction preparation cost.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of preparation method of bilayer rectangular opening micro-nano structure, it is characterised in that:Include the following steps:
Step 1, design configuration:The double-deck rectangular opening micro-nano structure figure is designed with pattern generator;
Step 2, prepare substrate:Prepare ito glass substrate and cleans drying;
Step 3, resist coating:PMMA photoresist is coated in the ready ito glass substrate of step 2 with photoresist spinner, with a thickness of
H;
Step 4, it is dried after gluing:The substrate of step 3 coating PMMA photoresist is placed on hot plate and is dried;
Step 5, it exposes:The micro-nano structure rectangle hole pattern designed in electron beam exposure step 1, the substrate after being exposed;
Step 6, develop:Under room temperature, the substrate exposed in step 5 is put into impregnate in developer solution and is developed, obtains shape as institute
The PMMA rubber column gel column of rectangular opening partial shape in micro-nano structure figure is stated, is highly H;
Step 7, it is fixed:Step 6 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, takes substrate after the completion of fixing
Out, with being dried with nitrogen;
Step 8, it is dried after fixing:Step 7 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries;
Step 9, nickel plating:The substrate dried after step 8 fixing is put into electron beam vacuum evaporating coating machine nickel plating;
Step 10, nanometer layer is deposited:The material and thickness that each nanometer layer is set according to requirement of experiment, obtain in step 9 containing nickel
Layer substrate on by it is lower and on each nanometer layer is successively deposited;
Step 11, PMMA photoresist is removed:Using lift-off technique, the substrate after step 10 vacuum evaporation is steeped in acetone
In, the time is at least 12h, dissolves PMMA rubber column gel column, and each nanometer layer at the top of rubber column gel column is vaporized in step 10 with PMMA photoresist
Dissolution fall off together;
Step 12, it dries up:Micro-nano structure after drying up the removing PMMA photoresist that step 11 obtains with nitrogen gun obtains described double
Layer rectangular opening micro-nano structure.
2. preparation method according to claim 1, it is characterised in that:Step 2 concrete operations are:Prepare having a size of
20.0mm long × 20.0mm wide × 2.0mm thickness ito glass, and the ito glass of preparation is put into cleaning solution and is cleaned, successively use
After deionized water, acetone and each ultrasound 15min of absolute alcohol, then it is cleaned by ultrasonic 5min with deionized water, finally uses nitrogen gun
It is put into after drying spare in nitrogen cabinet.
3. preparation method according to claim 1, it is characterised in that:In step 3, coating photoresist thickness H is greater than nickel layer
The sum of with each nanometer layer thickness, and H≤100nm.
4. preparation method according to claim 1, it is characterised in that:In step 3, the revolving speed of the photoresist spinner is
4000rpm, time are 60 s.
5. preparation method according to claim 1, it is characterised in that:In step 4 and step 8, the temperature of drying is 150
DEG C, time 3min.
6. preparation method according to claim 1, it is characterised in that:In step 3, the PMMA photoresist uses negtive photoresist.
7. preparation method according to claim 1, it is characterised in that:The time that development is impregnated in the step 6 is 60s.
8. preparation method according to claim 1, it is characterised in that:Developer solution is by two pentanone of tetramethyl in the step 6
With isopropanol with volume ratio for 3:1 cooperation is made, and the time for impregnating fixing is 20s.
9. preparation method according to claim 1, it is characterised in that:In step 9, be deposited nickel with a thickness of 5 ~ 10nm.
10. preparation method according to claim 1, it is characterised in that:Vacuum vapor plating in the step 9 and step 10
The vacuum degree of machine is not more than 3 × 10-6torr。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109283610A (en) * | 2018-12-07 | 2019-01-29 | 中山科立特光电科技有限公司 | A kind of micro-nano structure can produce strong circular dichroism |
CN111562721A (en) * | 2020-05-21 | 2020-08-21 | 苏州研材微纳科技有限公司 | Preparation method of micro-reaction pool array for high-throughput pyrosequencing chip |
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