CN110271136A - Non-conductive material and the complex of resin and preparation method thereof - Google Patents
Non-conductive material and the complex of resin and preparation method thereof Download PDFInfo
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- CN110271136A CN110271136A CN201810213227.2A CN201810213227A CN110271136A CN 110271136 A CN110271136 A CN 110271136A CN 201810213227 A CN201810213227 A CN 201810213227A CN 110271136 A CN110271136 A CN 110271136A
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- Prior art keywords
- middle layer
- matrix
- resin
- preparation
- degreasing
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/1418—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being deformed or preformed, e.g. by the injection pressure
- B29C45/14221—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being deformed or preformed, e.g. by the injection pressure by tools, e.g. cutting means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/1418—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being deformed or preformed, e.g. by the injection pressure
- B29C2045/14237—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being deformed or preformed, e.g. by the injection pressure the inserts being deformed or preformed outside the mould or mould cavity
- B29C2045/14245—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the inserts being deformed or preformed, e.g. by the injection pressure the inserts being deformed or preformed outside the mould or mould cavity using deforming or preforming means outside the mould cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C2045/1486—Details, accessories and auxiliary operations
- B29C2045/14868—Pretreatment of the insert, e.g. etching, cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention proposes a kind of preparation method of the complex of non-conductive material and resin comprising following steps: providing a matrix；Middle layer is formed on the surface of matrix or in part of the surface using physical vaporous deposition；Anodized is carried out to the surface for the middle layer being formed on matrix, middle layer is made to form multiple nanoscale holes in irregular shape towards internal by the surface of middle layer；The matrix with middle layer after anodized is washed and dried；The matrix with middle layer after above-mentioned washing and drying and processing is placed in an injection forming mold and carries out injection molding, so that the middle layer that the resin portion of melting immerses matrix is formed with the surface of nanoscale hole；Solidify the resin and form resin layer, so that the complex of the non-conductive material and resin be made.In addition, the present invention also provides the complexs of a kind of non-conductive material and resin.
Description
Technical field
The present invention relates to a kind of non-conductive material and the complex of resin and preparation method thereof, especially a kind of binding force compared with
The complex and preparation method thereof of strong non-conductive material and resin.
Background technique
Existing consumer electrical product such as mobile phone, laptop, MP3 music player etc. usually using such as glass,
The high grades of transparency such as glass-ceramic or monocrystalline sapphire and non-conductive material with high hardness is as display panel or back-cover panel.It is passing
In processing method of uniting, the connection majority between display panel or back-cover panel and resin is directly bonded using organic adhesion agent, so
And above-mentioned adhesive strength is poor, while organic adhesion agent can also increase with service life and aging occur and in turn result in the disconnected of junction
The generation for phenomena such as splitting, cracking, reduces service life.Meanwhile it being carved on the surface of the panel of non-conductive material using chemistry
The methods of erosion or ion beam milling are not easy to prepare with large specific surface area and nanoscale porous structure, to improve panel
With the bond strength of resin.
Summary of the invention
In view of the above situation, it is necessary to provide complex of a kind of non-conductive material and resin and preparation method thereof to solve
The above problem.
A kind of preparation method of the complex of non-conductive material and resin comprising following steps:
One matrix is provided；
Middle layer is formed on the surface of the matrix or in part of the surface using physical vaporous deposition；
Anodized is carried out to the surface for the middle layer being formed on the matrix, makes the middle layer by the middle layer
Surface forms multiple nanoscale holes in irregular shape towards internal；
The matrix with the middle layer after anodized is washed and dried；
The matrix with the middle layer after above-mentioned washing and drying and processing is placed in an injection forming mold and is infused
It is moulded into type, so that the middle layer that the resin portion of melting immerses the matrix is formed with the surface of nanoscale hole；
Solidify the resin and form resin layer, so that the complex of the non-conductive material and resin be made.
And a kind of complex of non-conductive material and resin prepared by preparation method as described above, the non-conductive material
Complex with resin includes matrix, middle layer and resin layer, which is formed in the matrix using physical vaporous deposition
Surface on or part of the surface on, the surface of the middle layer is formed with multiple nanoscales towards inside via anodized
Hole, resin layer injection molding are incorporated into the middle layer on the surface of multiple holes.
Complex of above-mentioned non-conductive material and resin and preparation method thereof passes through physical vaporous deposition in the table of matrix
Form middle layer on face or in part of the surface, and to the surface for the middle layer being formed on matrix carry out anodized with
Make to be formed with multiple nanoscale holes on the surface of middle layer, to make to form the insertion in injection moulding of the resin of resin layer
Into the hole of middle layer, and then make matrix and resin layer that there is stronger binding force, without the matrix in non-conductive material
On perform etching and prepare hole, preparation is simple, improves the preparation efficiency of the complex of non-conductive material and resin.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the non-conductive material of an embodiment of the present invention and the complex of resin.
Fig. 2 is the matrix of the complex of non-conductive material shown in FIG. 1 and resin and the diagrammatic cross-section of middle layer.
Fig. 3 is the scanning electron microscope (SEM) photograph on the surface of middle layer shown in Fig. 2.
Fig. 4 is the flow chart of the preparation method of the non-conductive material of an embodiment of the present invention and the complex of resin.
Main element symbol description
| The complex of non-conductive material and resin | 100 |
| Matrix | 10 |
| Middle layer | 20 |
| Hole | 21 |
| Resin layer | 30 |
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
It should be noted that it can be when an element or component are considered as " connection " another element or component
It is directly connected to another element or component or may be simultaneously present the element or component being centrally located.When an element or group
Part is considered as " setting exist " another element or component, it, which can be, is set up directly on another element or component or can
The element or component being centrally located can be existed simultaneously.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
Referring to Fig. 1, an embodiment of the present invention provides the complex 100 of a kind of non-conductive material and resin.Non-conductor
The complex 100 of material and resin includes matrix 10, middle layer 20 and resin layer 30.Middle layer 20 is formed on matrix 10.Tree
The resin material layer that rouge layer 30 is combined as a whole by injection moulding with middle layer 20.
Matrix 10 is the materials such as inorganic non-conductive material, such as glass, ceramics or monocrystalline sapphire.Matrix 10 passes through curtain coating
The modes such as molding, hot-drawn molding or machining are prepared.
Middle layer 20 is metal layer, and main component is selected from the one or more of the metals such as aluminium, magnesium, titanium.Middle layer 20
Thickness magnitude range be 1 μm~5 μm.In the present embodiment, middle layer 20 is via physical vapour deposition (PVD) mode and anodic oxidation side
Formula is formed on matrix 10.
Please refer to Fig. 2 and Fig. 3, multiple holes in irregular shape 21 are formed on the surface of middle layer 20.Hole
21 mean pore size range is 15nm~200nm.
Resin layer 30 is injected in the hole 21 of middle layer 20 by injection molding mode to be combined together with middle layer 20.
The main component of resin layer 30 is the crystal type thermoplastic resin with high fluidity, and above-mentioned crystal type thermoplastic resin is selected from poly-
Diphenyl sulfide (PPS) resin, polyamide (PA) resin and polyethylene terephthalate (PET) it is one or more.
Please refer to Fig. 1 to Fig. 4, the present invention prepares the preparation side of the complex 100 of above-mentioned non-conductive material and resin
The better embodiment of method the following steps are included:
Step S101: a matrix 10 is provided.Specifically, matrix 10 passes through tape casting, hot-drawn molding or machining etc.
Mode is prepared and has required shape.
Step S102: middle layer is formed on the surface of matrix 10 or in part of the surface using physical vaporous deposition
20。
Specifically, degreasing degreasing processing is carried out to described matrix 10, so that the surface cleaning of described matrix 10.The present embodiment
In, the technique of the degreasing degreasing processing are as follows: configured using commercially available inorganic non-metallic degreasing agent or common neutral cleaners
After aqueous solution, matrix 10 is put into and wherein impregnates or carries out ultrasonic cleaning, is then carried out to the matrix 10 after cleaning
It washes and dries.
Then to degreasing degreasing, treated that matrix 10 carries out is plasma-activated.In the present embodiment, inert gas is utilized
The plasma source of ionization carries out surface cleaning and activation to degreasing degreasing treated matrix 10.
By electron evaporation, thermal resistance evaporation, induction evaporation mode, arc evaporation and cathode spraying etc. it is at least one of in the way of
Middle layer 20 is formed on the matrix 10 after plasma-activated.Specifically, a metal targets are ionized, and adjustable
In the electric field and magnetic field environment of control it is described it is plasma-activated after matrix 10 on form fine and close middle layer 20.The metal
The main component of target is selected from the one or more of the metals such as aluminium, magnesium, titanium.The thickness magnitude range of middle layer 20 is 1 μm~5
μm.In the present embodiment, using arc process or sputtering method it is described it is plasma-activated after matrix 10 on form fine and close centre
Layer 20.The specific process parameter of above-mentioned arc process is as follows: target source current 50A~120A, bias 60V~150V, argon gas stream
Fast 20SCCM~100SCCM, vacuum pressure 0.1Pa~0.3Pa, plated film time 5min~30min in furnace；The tool of above-mentioned sputtering method
Body technology parameter is as follows: power 5kW~10kW, bias 60V~150V, argon gas flow velocity 20SCCM~100SCCM, true in furnace
Pneumatics power 0.1Pa~0.3Pa, plated film time 5min~30min.
Step S103: anodized is carried out to the surface for the middle layer 20 being formed on matrix 10, makes above-mentioned centre
Layer 20 forms multiple nanoscale hole in irregular shape 21 (such as Fig. 2 and Fig. 3 towards internal by the surface of the middle layer 20
It is shown).The nanoscale hole 21 is uniformly distributed on the surface of the middle layer 20.
Specifically, degreasing degreasing processing is carried out to the matrix 10 with middle layer 20 first, so that the middle layer 20
Surface cleaning.In present embodiment, the technique of above-mentioned degreasing degreasing processing are as follows: after cleaning agent is configured to aqueous solution, then will tool
There is the matrix 10 of middle layer 20 to be put into wherein dipping 5min~15min.To described with middle layer 20 after degreasing degreasing processing
Matrix 10 is washed and is dried.Above-mentioned cleaning agent is the alkaline cleaner that can remove grease.
Anodized is carried out to degreasing degreasing treated middle layer 20.Specifically, the anodized is
Using graphite plate as cathode, the matrix 10 with middle layer 20 is used as anode, and in the electrolyte that temperature is 20 DEG C~40 DEG C
Anodized is carried out to the surface of middle layer 20, the processing time is 5min~20min.The voltage of the electrochemical treatments is
8V~30V.
The electrolyte includes acid reagent and water.The acid reagent is selected from sulfuric acid, oxalic acid, phosphoric acid, citric acid, winestone
Sour is one or more.The volume fraction of the acid reagent in the electrolytic solution is 2%~20%.
The mean pore size range of the nanoscale hole 21 is 15nm~200nm.
Step S104: the matrix 10 with middle layer 20 after anodized is washed and is dried.Specifically,
The matrix 10 with middle layer 20 after anodized is subjected to ultrasonic cleaning in clear water at room temperature, to go to centre
Remaining electrolyte in the hole 21 of layer 20, and drying and processing is carried out to the matrix 10 with middle layer 20 after washing.
Step S105: nanoscale hole is formed in the middle layer 20 of the above-mentioned matrix 10 after washing and drying process
Injection molding is carried out on 21 surface, with the surface of described matrix 10 formed resin layer 30 to prepare non-conductive material with
The complex 100 of resin.
Specifically, an injection forming mold is provided, there is nanoscale hole after washing and drying process by above-mentioned
The matrix 10 of 21 middle layer 20 is placed in injection forming mold, injects the resin of melting in the middle layer 20 of described matrix 10
On surface with nanoscale hole 21, the resin portion of high fluidity is flowed into the nanoscale hole 21 to fill
Nanoscale hole 21 is stated, so that the resin layer 30 formed after solidifying and the nanoscale hole 21 generate mechanical snap, from
And the binding force between resin layer 30 and described matrix 10 is effectively improved, so that the non-conductive material and resin is compound
Bond strength with higher between matrix 10 in body 100 and resin layer 30.
The main component of the resin layer 30 is the crystal type thermoplastic resin with high fluidity, above-mentioned crystal type thermoplastic
Property resin be selected from polyphenylene sulfide (PPS) resin, polyamide (PA) resin and polyethylene terephthalate (PET) one kind or
It is a variety of.
Complex 100 of above-mentioned non-conductive material and resin and preparation method thereof is by physical vaporous deposition in matrix 10
Surface on or part of the surface on formed middle layer 20, and to the surface for the middle layer 20 being formed on matrix 10 carry out anode
Oxidation processes are so as to be formed with multiple nanoscale holes 21, to make to form the resin of resin layer 30 on the surface of middle layer 20
In the hole 21 for being embedded into middle layer 20 in injection moulding, and then make matrix 10 and resin layer 30 that there is stronger binding force,
Hole is prepared without performing etching on the matrix 10 of non-conductive material, preparation is simple, improves non-conductive material and tree
The preparation efficiency of the complex 100 of rouge.
In addition, those skilled in the art can also do other variations in spirit of that invention, certainly, these are smart according to the present invention
The variation that mind is done, should all be included in scope of the present invention.
Claims (16)
1. a kind of preparation method of the complex of non-conductive material and resin comprising following steps:
One matrix is provided；
Middle layer is formed on the surface of the matrix or in part of the surface using physical vaporous deposition；
Anodized is carried out to the surface for the middle layer being formed on the matrix, makes the middle layer by the surface of the middle layer
Multiple nanoscale holes in irregular shape are formed towards internal；
The matrix with the middle layer after anodized is washed and dried；
The matrix with the middle layer after above-mentioned washing and drying and processing is placed in an injection forming mold and is molded into
Type, so that the middle layer that the resin portion of melting immerses the matrix is formed with the surface of nanoscale hole；
Solidify the resin and form resin layer, so that the complex of the non-conductive material and resin be made.
2. preparation method as described in claim 1, it is characterised in that: multiple holes are uniformly distributed in the surface of the middle layer
On, the mean pore size range of the hole is 15nm~200nm.
3. preparation method as described in claim 1, it is characterised in that: the matrix passes through tape casting, hot-drawn molding or machinery
The mode of processing is prepared and has required shape.
4. preparation method as described in claim 1, it is characterised in that: the thickness magnitude range of the middle layer is 1 μm~5 μm,
The middle layer is metal layer, the main component of the middle layer be selected from aluminium, magnesium, titanium it is one or more.
5. preparation method as described in claim 1, it is characterised in that: using physical vaporous deposition on the surface of the matrix
Or the step of middle layer is formed in part of the surface, specifically includes:
Degreasing degreasing processing is carried out to the matrix, so that the surface cleaning of the matrix；
Then degreasing degreasing treated the matrix is carried out plasma-activated；
One metal targets are ionized, and in regulatable electric field and magnetic field environment it is described it is plasma-activated after
Fine and close middle layer is formed on the matrix.
6. preparation method as claimed in claim 5, it is characterised in that: the technique of the degreasing degreasing processing are as follows: using inorganic
It is nonmetallic be configured to aqueous solution with degreasing agent or neutral cleaners after, by the matrix be put into wherein impregnate or carry out ultrasonic wave it is clear
It washes, then the matrix after cleaning is being washed and dried.
7. preparation method as claimed in claim 5, it is characterised in that: using the plasma source of inert gas ionization to degreasing
The matrix after oil removal treatment carries out surface cleaning and activation.
8. preparation method as claimed in claim 5, it is characterised in that: using the matrix of arc process after plasma-activated
Upper to form fine and close middle layer, the specific process parameter of the arc process is as follows: target source current 50A~120A, bias 60V
~150V, argon gas flow velocity 20SCCM~100SCCM, vacuum pressure 0.1Pa~0.3Pa, plated film time 5min~30min in furnace.
9. preparation method as claimed in claim 5, it is characterised in that: using sputtering method it is described it is plasma-activated after base
Fine and close middle layer is formed on body, the specific process parameter of the sputtering method is as follows: power 5kW~10kW, bias 60V~
150V, argon gas flow velocity 20SCCM~100SCCM, vacuum pressure 0.1Pa~0.3Pa, plated film time 5min~30min in furnace.
10. preparation method as described in claim 1, it is characterised in that: to the surface of the middle layer being formed on the matrix into
Row anodized makes the middle layer form multiple nanoscales in irregular shape towards internal by the surface of the middle layer
The step of hole, specifically includes:
Degreasing degreasing processing is carried out to the matrix with the middle layer, so that the surface cleaning of the middle layer；
Anodized carried out to degreasing degreasing treated the middle layer, the anodized be using graphite plate as
Cathode has the matrix of the middle layer as anode, and the electricity of 8V~30V is used in the electrolyte that temperature is 20 DEG C~40 DEG C
It presses and anodized is carried out to the surface of middle layer, the processing time is 5min~20min.
11. preparation method as claimed in claim 10, it is characterised in that: the electrolyte includes acid reagent and water, described
Acid reagent be selected from sulfuric acid, oxalic acid, phosphoric acid, citric acid, tartaric acid it is one or more, the acid reagent is in the electrolytic solution
Volume fraction is 2%~20%.
12. preparation method as claimed in claim 10, it is characterised in that: the technique of above-mentioned degreasing degreasing processing are as follows: will clean
After agent is configured to aqueous solution, then the matrix with the middle layer is put into and wherein impregnates 5min~15min, after degreasing degreasing processing
The matrix with the middle layer is washed and dried, the cleaning agent is the alkaline cleaner that can remove grease.
13. preparation method as described in claim 1, it is characterised in that: the main component of the resin layer is with high fluidity
Crystal type thermoplastic resin, the crystal type thermoplastic resin is selected from polyphenylene sulfide, polyamide and poly- to benzene two
Formic acid glycol ester it is one or more.
14. it is a kind of as described in any one of claim 1~13 preparation method preparation non-conductive material and resin it is compound
The complex of body, the non-conductive material and resin includes matrix, middle layer and resin layer, it is characterised in that: the middle layer utilizes
Physical vaporous deposition is formed on the surface of the matrix or in part of the surface, the surface of the middle layer via anodic oxidation at
Reason is formed with multiple nanoscale holes towards inside, and resin layer injection molding is incorporated into the surface that the middle layer has multiple holes
On.
15. the complex of non-conductive material as claimed in claim 14 and resin, it is characterised in that: the average pore size of the hole
Magnitude range is 15nm~200nm.
16. the complex of non-conductive material as claimed in claim 14 and resin, it is characterised in that: the middle layer is metal
Layer, the main component of the middle layer be selected from aluminium, magnesium, titanium it is one or more, the thickness magnitude range of the middle layer is 1 μm~
5μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810213227.2A CN110271136A (en) | 2018-03-15 | 2018-03-15 | Non-conductive material and the complex of resin and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810213227.2A CN110271136A (en) | 2018-03-15 | 2018-03-15 | Non-conductive material and the complex of resin and preparation method thereof |
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| CN110271136A true CN110271136A (en) | 2019-09-24 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107263939A (en) * | 2016-04-08 | 2017-10-20 | 优尔材料工业（深圳）有限公司 | Composite body and method for producing same |
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- 2018-03-15 CN CN201810213227.2A patent/CN110271136A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107263939A (en) * | 2016-04-08 | 2017-10-20 | 优尔材料工业（深圳）有限公司 | Composite body and method for producing same |
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