CN110265874B - Vertical cavity semiconductor optical amplifier, optical amplification system and preparation method - Google Patents
Vertical cavity semiconductor optical amplifier, optical amplification system and preparation method Download PDFInfo
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- CN110265874B CN110265874B CN201910562970.3A CN201910562970A CN110265874B CN 110265874 B CN110265874 B CN 110265874B CN 201910562970 A CN201910562970 A CN 201910562970A CN 110265874 B CN110265874 B CN 110265874B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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Abstract
The invention discloses a vertical cavity semiconductor optical amplifier, which comprises a top heat sink, a bottom heat sink and at least two optical amplification chips, wherein the top heat sink is arranged on the top of the vertical cavity semiconductor optical amplifier; the top heat sink and the bottom heat sink are oppositely arranged along the thickness direction, the light amplification chip is positioned between the top heat sink and the bottom heat sink, and at least two light amplification chips are stacked along the thickness direction to be fixedly connected; the light amplification chip comprises an active region, the light amplification chip in contact with the bottom heat sink is a first chip, and the first chip further comprises a bottom cavity mirror; the light amplification chip in contact with the top heat sink is a second chip, and the second chip further comprises a top cavity mirror. The length of the resonant cavity is determined by the thicknesses of the optical amplification chips, so that the length of the resonant cavity can be longer, the optical power density in the resonant cavity can be effectively reduced when light oscillates in the resonant cavity, and the vertical cavity semiconductor optical amplifier has a higher optical power safety threshold. The invention also provides a light amplification system and a preparation method, and the light amplification system and the preparation method also have the beneficial effects.
Description
Technical Field
The invention relates to the technical field of optical amplifiers, in particular to a vertical cavity semiconductor optical amplifier, a vertical cavity semiconductor optical amplification system and a preparation method of the vertical cavity semiconductor optical amplifier.
Background
The vertical cavity semiconductor optical amplifier not only has the advantages of small volume, light weight and the like of the traditional edge-emitting semiconductor optical amplifier, but also has the natural advantages of easy optical fiber coupling and the like of outputting circularly symmetric light spots, and has good application prospect. However, in the prior art, the optical power safety threshold of the vertical cavity semiconductor optical amplifier is low. Therefore, how to raise the optical power safety threshold of the semiconductor optical amplifier is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a vertical cavity semiconductor optical amplifier, which has a higher optical power safety threshold; another object of the present invention is to provide a vertical cavity semiconductor optical amplification system, which has a high optical power safety threshold; another object of the present invention is to provide a method for manufacturing a vertical cavity semiconductor optical amplifier, which has a high optical power safety threshold.
In order to solve the technical problem, the invention provides a vertical cavity semiconductor optical amplifier, which comprises a top heat sink, a bottom heat sink and at least two optical amplification chips;
the top heat sink and the bottom heat sink are oppositely arranged along the thickness direction, the light amplification chip is positioned between the top heat sink and the bottom heat sink, and at least two light amplification chips are stacked along the thickness direction to be fixedly connected;
the light amplification chip comprises an active region, a buffer region and a blocking region, wherein the buffer region is positioned on one side, facing the bottom heat sink, of the active region, and the blocking region is positioned on one side, facing the top heat sink, of the active region; between any two adjacent light amplification chips, the blocking area of the light amplification chip facing to one side of the bottom heat sink is contacted with the buffer area of the light amplification chip facing to one side of the top heat sink so as to be fixedly connected;
the light amplification chip in contact with the bottom heat sink is a first chip, and the first chip further comprises a bottom cavity mirror positioned on one side, facing the bottom heat sink, of an active area in the first chip; the light amplification chip in contact with the top heat sink is a second chip, and the second chip further comprises a top cavity mirror located in the second chip, wherein the active area faces one side of the top heat sink.
Optionally, the bottom cavity mirror is located in the first chip, the active region faces a side surface of the bottom heat sink, the buffer region of the first chip is located in the side surface of the bottom cavity mirror facing the bottom heat sink, and the bottom heat sink is fixedly connected to the buffer region of the first chip; the top cavity mirror is positioned in the second chip, the active area faces to the top heat sink side surface, the blocking area of the second chip is positioned in the top cavity mirror faces to the top heat sink side surface, and the top heat sink is fixedly connected with the blocking area of the second chip.
Optionally, the bottom cavity mirror and the top cavity mirror are both bragg reflectors.
Optionally, the bottom heat sink is made of a non-metal material, and the bottom heat sink and the first chip are bonded to each other to be fixedly connected.
Optionally, the bottom heat sink is made of a metal material, and the bottom heat sink and the first chip are welded to each other to be fixedly connected.
Optionally, the top heat sink is made of a non-metal material, and the top heat sink and the second chip are bonded to each other to be fixedly connected.
Optionally, any one of the active regions of the optical amplification chip corresponds to the same gain optical wavelength.
Optionally, the wavelengths of the gain light corresponding to any one of the active regions of the light amplification chip are different.
The invention also provides a vertical cavity semiconductor optical amplification system comprising a signal light source, a pump light source and a vertical cavity semiconductor optical amplifier as claimed in any one of claims 1 to 8; and the signal light generated by the signal light source and the pump light generated by the pump light source irradiate the active region in the vertical cavity semiconductor optical amplifier.
The invention also provides a preparation method of the vertical cavity semiconductor optical amplifier, which comprises the following steps:
fixedly connecting a first chip in the light amplification chip on the bottom heat sink surface; the light amplification chip comprises an active region, a buffer region, a blocking region and a substrate, wherein the buffer region is positioned on one side, facing the bottom heat sink, of the active region, the blocking region is positioned on one side, facing away from the bottom heat sink, of the active region, and the substrate is positioned on one side surface, facing away from the bottom heat sink, of the blocking region; the first chip also comprises a bottom cavity mirror positioned on one side of the active area in the first chip facing the bottom heat sink;
removing the substrate;
sequentially stacking and arranging the optical amplification chips on the surface of the first chip, which is opposite to the bottom heat sink, along the thickness direction of the optical amplification chips, and removing the substrate of the currently fixedly connected optical amplification chip after arranging any one optical amplification chip; between any two adjacent light amplification chips, the blocking area of the light amplification chip facing to one side of the bottom heat sink is contacted with the buffer area of the light amplification chip back to one side of the bottom heat sink so as to be fixedly connected; the light amplification chip which is farthest away from the bottom heat sink in the light amplification chips is a second chip, and the second chip further comprises a top cavity mirror which is positioned on one side, back to the bottom heat sink, of an active area in the second chip;
and arranging a top heat sink on the surface of one side of the second chip, which is back to the bottom heat sink, so as to manufacture the vertical cavity semiconductor optical amplifier.
The invention provides a vertical cavity semiconductor optical amplifier, which comprises a top heat sink, a bottom heat sink and at least two optical amplification chips, wherein the top heat sink is arranged on the top of the vertical cavity semiconductor optical amplifier; the top heat sink and the bottom heat sink are oppositely arranged along the thickness direction, the light amplification chip is positioned between the top heat sink and the bottom heat sink, and at least two light amplification chips are stacked along the thickness direction to be fixedly connected; the light amplification chip comprises an active area, the light amplification chip in contact with the bottom heat sink is a first chip, and the first chip further comprises a bottom cavity mirror positioned on one side, facing the bottom heat sink, of the active area in the first chip; the light amplification chip in contact with the top heat sink is a second chip, and the second chip further comprises a top cavity mirror located on one side, facing the top heat sink, of the active area in the second chip.
Because the length of the resonant cavity between the top cavity mirror and the bottom cavity mirror is determined by the thicknesses of the plurality of optical amplification chips, the thickness of each structure in each corresponding optical amplification chip can be lower, and thus, the defects of each optical amplification chip can be ensured to be less when the optical amplification chip is grown and prepared; meanwhile, the length of the resonant cavity between the top cavity mirror and the bottom cavity mirror is determined by the thicknesses of the multiple optical amplification chips and is not interfered by a growth process, so that the length of the resonant cavity can be longer, the optical power density in the resonant cavity can be effectively reduced when light oscillates in the resonant cavity, and under the condition that a material damage threshold is preset, an optical power safety threshold in the cavity is increased, and the vertical cavity semiconductor optical amplifier has a higher optical power safety threshold.
The invention also provides a vertical cavity semiconductor optical amplification system and a preparation method of the vertical cavity semiconductor optical amplifier, which also have the beneficial effects and are not repeated herein.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the light amplification chip in FIG. 1;
FIG. 3 is a schematic structural diagram of the first chip in FIG. 1;
FIG. 4 is a schematic diagram of a second chip shown in FIG. 1;
fig. 5 to 9 are process flow diagrams of a method for manufacturing a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention.
In the figure: 1. the light amplification chip comprises a bottom heat sink, a top heat sink 2, a light amplification chip 3, a first chip 31, a second chip 32, an active region 4, a buffer region 5, a blocking region 6, a bottom cavity mirror 7, a top cavity mirror 8 and a substrate 9.
Detailed Description
The core of the invention is to provide a vertical cavity semiconductor optical amplifier. In the prior art, a vertical cavity semiconductor optical amplifier is only composed of an optical amplification chip, that is, only one active region is usually arranged between a top cavity mirror and a bottom cavity mirror of a resonant cavity in the vertical cavity semiconductor optical amplifier. In order to increase the length of the resonant cavity, an optical amplification chip with a thicker thickness needs to be prepared, but in the growth process, the thicker the thickness is, the more defects are accumulated; meanwhile, due to the limitation of the growth process, the length of the resonant cavity cannot be effectively increased, so that the optical power density in the resonant cavity is high, and the optical power safety threshold of the straight-cavity semiconductor optical amplifier is low.
The invention provides a vertical cavity semiconductor optical amplifier, which comprises a top heat sink, a bottom heat sink and at least two optical amplification chips; the top heat sink and the bottom heat sink are oppositely arranged along the thickness direction, the light amplification chip is positioned between the top heat sink and the bottom heat sink, and at least two light amplification chips are stacked along the thickness direction to be fixedly connected; the light amplification chip comprises an active area, the light amplification chip in contact with the bottom heat sink is a first chip, and the first chip further comprises a bottom cavity mirror positioned on one side, facing the bottom heat sink, of the active area in the first chip; the light amplification chip in contact with the top heat sink is a second chip, and the second chip further comprises a top cavity mirror located on one side, facing the top heat sink, of the active area in the second chip.
Because the length of the resonant cavity between the top cavity mirror and the bottom cavity mirror is determined by the thicknesses of the plurality of optical amplification chips, the thickness of each structure in each corresponding optical amplification chip can be lower, and thus, the defects of each optical amplification chip can be ensured to be less when the optical amplification chip is grown and prepared; meanwhile, the length of the resonant cavity between the top cavity mirror and the bottom cavity mirror is determined by the thicknesses of the multiple optical amplification chips and is not interfered by a growth process, so that the length of the resonant cavity can be longer, the optical power density in the resonant cavity can be effectively reduced when light oscillates in the resonant cavity, and under the condition that a material damage threshold is preset, an optical power safety threshold in the cavity is increased, and the vertical cavity semiconductor optical amplifier has a higher optical power safety threshold.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, fig. 1 is a schematic structural diagram of a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention; FIG. 2 is a schematic structural diagram of the light amplification chip in FIG. 1; FIG. 3 is a schematic structural diagram of the first chip in FIG. 1; fig. 4 is a schematic structural diagram of the second chip in fig. 1.
Referring to fig. 1, in the embodiment of the present invention, an optical amplifier includes a top heat sink 2, a bottom heat sink 1, and at least two optical amplification chips 3; the top heat sink 2 and the bottom heat sink 1 are oppositely arranged along the thickness direction, the optical amplification chip 3 is positioned between the top heat sink 2 and the bottom heat sink 1, and at least two optical amplification chips 3 are stacked along the thickness direction to be fixedly connected; the light amplification chip 3 comprises an active area 4, a buffer area 5 positioned on one side of the active area 4 facing the bottom heat sink 1, and a blocking area 6 positioned on one side of the active area 4 facing the top heat sink 2; between any two adjacent light amplification chips 3, the blocking area 6 of the light amplification chip 3 facing one side of the bottom heat sink 1 is in contact with the buffer area 5 of the light amplification chip 3 facing one side of the top heat sink 2 to be fixedly connected; the light amplification chip 3 in contact with the bottom heat sink 1 is a first chip 31, and the first chip 31 further comprises a bottom cavity mirror 7 positioned on one side of the active region 4 in the first chip 31, which faces the bottom heat sink 1; the light amplification chip 3 in contact with the top heat sink 2 is a second chip 32, and the second chip 32 further comprises a top cavity mirror 8 located on one side of the active region 4 facing the top heat sink 2 in the second chip 32.
The top heat sink 2 and the bottom heat sink 1 are both used for heat dissipation of the optical amplification chip 3, and the top heat sink 2 and the bottom heat sink 1 can lead waste heat generated during operation of the optical amplification chip 3 out of the optical amplification chip 3, so as to ensure that the optical amplifier operates in a proper temperature range. In the embodiment of the present invention, the top heat sink 2 and the bottom heat sink 1 need to be oppositely disposed in the thickness direction, and the optical amplifier described below may be stacked in the thickness direction between the top heat sink 2 and the bottom heat sink 1. At this time, the vertical cavity semiconductor optical amplifier provided by the embodiment of the invention is of a sandwich-like structure as a whole, only one optical amplification chip 3 is in contact with the bottom heat sink 1, and only one optical amplification chip 3 is in contact with the top heat sink 2. The detailed structure of the top heat sink 2 and the bottom heat sink 1 will be described in detail in the following embodiments of the invention, and will not be described herein.
Referring to fig. 2, in the embodiment of the present invention, any one of the optical amplification chips 3 is located between the top heat sink 2 and the bottom heat sink 1, and each of the optical amplification chips 3 includes an active region 4, a buffer region 5 located on a side of the active region 4 facing the bottom heat sink 1, and a blocking region 6 located on a side of the active region 4 facing the top heat sink 2. The active region 4 is configured to provide optical gain for external signal light, both externally input pump light and signal light are transmitted to the active region 4, and the signal light can extract energy of the pump light in the active region 4 to achieve optical gain for the signal light. The specific structure of the active region 4 may be a quantum well structure, and the specific structure and specific material of the active region 4 may refer to the prior art, which is not described herein again.
A buffer region 5 and a blocking region 6 are respectively grown on two opposite sides of the active region 4, and the buffer region 5 and the blocking region 6 are used for protecting the active region 4, so that the active region 4 is not easily damaged. The blocking region 6 is also mainly used as a cut-off region for the substrate removal process to ensure that the active region 4 is protected from physical and chemical damages and the active region 4 is prevented from being oxidized in the substrate removal process, and details about the substrate removal process will be described in detail in the following embodiments of the invention and will not be described herein again. At the same time, the blocking region 6 also provides a connection interface between the optical amplifier chip 3 and the rest of the optical amplifier chip 3.
The buffer 5 is also used to provide a connection interface with other components to realize the fixed connection of the optical amplifier chip 3. In the embodiment of the invention, between any two adjacent light amplification chips 3, the blocking area 6 of the light amplification chip 3 facing to the bottom heat sink 1 side is in contact with the buffer area 5 of the light amplification chip 3 facing to the top heat sink 2 side for fixed connection. In order to reduce material defects introduced between adjacent optical amplifier chips 3 in the manufacturing process and ensure high quality of the optical amplifier, the lattices of the buffer region 5 and the barrier region 6 between two adjacent optical amplifier chips 3 are proposed to be matched with each other so as to reduce defects at the interface between the buffer region 5 and the barrier region 6. The degree of matching between the lattices is not particularly limited, and may be determined as appropriate. The adhesion between the amplifier chips 3 is best thermally conductive when the lattice of the buffer region 5 and the lattice of the barrier region 6 are closely matched to achieve atomic force bonding. It should be noted that the blocking region 6 mainly plays a role in protection in the embodiment of the present invention, and protects the active region 4 from being damaged in the substrate removal process; while the buffer region 5 is mainly used to reduce dislocations generated at the connection interface. The specific structure and specific material of the buffer region 5 and the blocking region 6 can be set according to the actual situation, and are not limited herein.
Referring to fig. 3 and 4, in the embodiment of the present invention, a plurality of light amplification chips 3 are stacked in the thickness direction between the bottom heat sink 1 and the top heat sink 2, and the blocking region 6 of the light amplification chip 3 facing the bottom heat sink 1 side between the adjacent light amplification chips 3 and the buffer region 5 of the light amplification chip 3 facing the top heat sink 2 side are bonded to each other to be fixedly connected, and the light amplification chip 3 in contact with the bottom heat sink 1 is the first chip 31 in the embodiment of the present invention, the light amplification chip 3 in contact with the top heat sink 2 is the second chip 32 in the embodiment of the present invention, and the light amplification chip 3 between the first chip 31 and the second chip 32 is generally referred to as an intermediate chip in the embodiment of the present invention. The first chip 31 is fixedly connected to the bottom heat sink 1, and the second chip 32 is fixedly connected to the top heat sink 2. The first chip 31 further includes a bottom cavity mirror 7 located on a side of the active region 4 facing the bottom heat sink 1 in the first chip 31, and the second chip 32 further includes a top cavity mirror 8 located on a side of the active region 4 facing the top heat sink 2 in the second chip 32, and a gain cavity is formed in the optical amplifier by the bottom cavity mirror 7, the top cavity mirror 8 and the active regions 4 therebetween, and signal light input from the outside will oscillate and amplify in the gain cavity, wherein the active regions 4 are used for providing optical gain to the signal light.
Specifically, the bottom cavity mirror 7 is generally located on the surface of the first chip 31 on the side of the active region 4 facing the bottom heat sink 1, while the buffer region 5 of the first chip 31 is located on the surface of the bottom cavity mirror 7 on the side facing the bottom heat sink 1, and the bottom heat sink 1 is fixedly connected with the buffer region 5 of the first chip 31. At this time, the buffer region 5 of the first chip 31 also functions to protect the bottom cavity mirror 7. Since the above-mentioned bottom heat sink 1 is usually fixedly connected to the buffer area 5 of the first chip 31, when the bottom heat sink 1 is directly bonded to the buffer area 5 of the first chip 31, the lattice of the buffer area 5 of the first chip 31 is preferably matched to the lattice of the bottom heat sink 1. The degree of matching between the lattices is not particularly limited, and may be determined as appropriate. The adhesive force between the first chip 31 and the bottom heat sink 1 is preferably the highest in thermal conductivity, as the lattice of the buffer region 5 of the first chip 31 and the lattice of the bottom heat sink 1 are closely matched to enable atomic force bonding.
The top cavity mirror 8 is generally located on the surface of the active region 4 of the second chip 32 facing the top heat sink 2, the blocking region 6 of the second chip 32 is located on the surface of the top cavity mirror 8 facing the top heat sink 2, and the top heat sink 2 is fixedly connected with the blocking region 6 of the second chip 32. At this time, the barrier region 6 of the second chip 32 also functions to protect the dome mirror 8. Since the top heat sink 2 is usually fixedly connected to the barrier region 6 of the second chip 32, when the top cavity mirror 8 is directly bonded to the barrier region 6 of the second chip 32, the lattice of the barrier region 6 of the second chip 32 needs to match the lattice of the top heat sink 2. The degree of matching between the lattices is not particularly limited, and may be determined as appropriate. The adhesion between second chip 32 and top heat sink 2 is best at the highest thermal conductivity when the lattice of barrier region 6 of second chip 32 and the lattice of top heat sink 2 are closely matched to enable atomic force bonding.
It should be noted that, in the vertical cavity semiconductor optical amplifier in the embodiment of the present invention, the first chip 31 includes the buffer region 5, the bottom cavity mirror 7, the active region 4, and the blocking region 6; the second chip 32 comprises a buffer region 5, an active region 4, a top cavity mirror 8 and a blocking region 6; the intermediate chip comprises a buffer region 5, an active region 4 and a barrier region 6.
In the embodiment of the present invention, the bottom cavity mirror 7 and the top cavity mirror 8 are both bragg reflectors, that is, the structure of the bottom cavity mirror 7 and the structure of the top cavity mirror 8 are both bragg reflectors. For the specific structure of the bragg reflector, reference may be made to the prior art, and further description thereof is omitted here. The bragg reflector is used as the bottom cavity mirror 7 and the top cavity mirror 8 in the embodiment of the invention, so that the bottom cavity mirror 7 and the top cavity mirror 8 have high reflectivity to light, and the bottom cavity mirror 7 is conveniently integrated in the first chip 31, and the top cavity mirror 8 is conveniently integrated in the second chip 32.
The vertical cavity semiconductor optical amplifier provided by the embodiment of the invention comprises a top heat sink 2, a bottom heat sink 1 and at least two optical amplification chips 3; the top heat sink 2 and the bottom heat sink 1 are oppositely arranged along the thickness direction, the light amplification chip 3 is positioned between the top heat sink 2 and the bottom heat sink 1, and at least two light amplification chips 3 are stacked along the thickness direction to be fixedly connected; the optical amplification chip 3 comprises an active region 4, the optical amplification chip 3 in contact with the bottom heat sink 1 is a first chip 31, and the first chip 31 further comprises a bottom cavity mirror 7 positioned on one side of the active region 4 of the first chip 31, which faces the bottom heat sink 1; the light amplification chip 3 in contact with the top heat sink 2 is a second chip 32, and the second chip 32 further includes a top cavity mirror 8 located on the side of the active region 4 facing the top heat sink 2 in the second chip 32.
Because the length of the resonant cavity between the top cavity mirror 8 and the bottom cavity mirror 7 is determined by the thickness of the plurality of optical amplification chips 3, the thickness of each structure in each corresponding optical amplification chip 3 can be lower, thereby ensuring that the defects of each optical amplification chip 3 are less when the optical amplification chips 3 are grown and prepared; meanwhile, the length of the resonant cavity between the top cavity mirror 8 and the bottom cavity mirror 7 is determined by the thicknesses of the multiple optical amplification chips 3 and is not interfered by a growth process, so that the length of the resonant cavity can be longer, the optical power density in the resonant cavity can be effectively reduced when light oscillates in the resonant cavity, and under the condition that a material damage threshold is preset, an optical power safety threshold in the cavity is increased, so that the vertical cavity semiconductor optical amplifier has a higher optical power safety threshold.
The detailed structure of a vertical cavity semiconductor optical amplifier provided by the present invention will be described in detail in the following embodiments of the present invention.
The present invention is different from the above-described embodiments, and the present invention further specifically limits the structure of the vertical cavity semiconductor optical amplifier on the basis of the above-described embodiments. The rest of the contents are already described in detail in the above embodiments of the present invention, and are not described herein again.
In the embodiment of the present invention, the material of the bottom heatsink 1 may be a non-metallic material, and the bottom heatsink 1 and the first chip 31 are bonded to each other to be fixedly connected. When external pump light is irradiated to the active region 4 specifically by a back-illuminated or transmissive pumping manner, the bottom heatsink 1 generally needs to have a certain light transmittance, the material of the bottom heatsink 1 generally selects a high-thermal-conductivity non-metallic material such as diamond or aluminum nitride, and the bottom heatsink 1 and the first chip 31 are fixedly connected by a material bonding process. For details of the material bonding process, reference may be made to the prior art, and further description is not repeated herein.
In the embodiment of the present invention, the material of the bottom heat sink 1 may also be a metal material, and the bottom heat sink 1 and the first chip 31 are welded to each other to be fixedly connected. When the external pump light is irradiated to the active region 4 in a reflective pumping manner, the bottom heat sink 1 is usually made of high thermal conductive metal material such as tungsten copper, oxygen-free copper, etc. to increase the heat dissipation of the bottom heat sink 1, and the bottom heat sink 1 and the first chip 31 are fixedly connected by a welding process. For details of the welding process, reference may be made to the prior art, and further description is not repeated herein.
In the embodiment of the present invention, the material of the top heatsink 2 may be a non-metallic material, and the top heatsink 2 and the second chip 32 are bonded to each other to be fixedly connected. In order to facilitate the injection of the pump light and the signal light, the top heatsink 2 generally needs to have a certain light transmittance, the material of the top heatsink 2 generally selects a high thermal conductivity non-metallic material such as diamond, and the top heatsink 2 and the second chip 32 are fixedly connected by using a material bonding process. For details of the material bonding process, reference may be made to the prior art, and further description is not repeated herein.
Preferably, in the embodiment of the present invention, any one of the active regions 4 of the optical amplifier chip 3 corresponds to the same gain optical wavelength; that is, in the whole optical amplifier, each active region 4 performs optical gain on the signal light with the same wavelength. Compared with the prior art in which only a single active region 4 is arranged, the optical amplifier provided by the embodiment of the invention has a plurality of active regions 4, so that a higher gain level and a higher saturation output optical power for single-wavelength signal light can be realized.
Preferably, in the embodiment of the present invention, the wavelengths of the gain light corresponding to any one of the active regions 4 of the optical amplifier chip 3 are different; that is, the respective active regions 4 in the entire optical amplifier perform optical gain on the signal light with different wavelengths, and the entire optical amplifier may perform optical gain on the signal light with multiple wavelengths, that is, the entire optical amplifier may have a very wide gain spectrum bandwidth.
It should be noted that, in the embodiment of the present invention, the two cases may be set in a mixed manner, that is, one portion of the active region 4 is set to perform optical gain on the same optical wavelength, and the other portion of the active region 4 is set to perform optical gain on different optical wavelengths, so that the optical amplifier may have a higher gain level, a higher saturation output optical power, and a wider gain spectrum bandwidth at the same time, and the optical amplifier may have a wider application value.
According to the vertical cavity semiconductor optical amplifier provided by the embodiment of the invention, when any active region 4 of the optical amplification chip 3 corresponds to the same gain wavelength, higher gain level and higher saturation output optical power of single-wavelength signal light can be realized; when the wavelengths of the gain light corresponding to any one of the active regions 4 of the optical amplifier chip 3 are different, the whole optical amplifier can have a very wide gain spectrum bandwidth.
The invention also provides a vertical cavity semiconductor optical amplification system, which comprises a signal light source, a pumping light source and the vertical cavity semiconductor optical amplifier provided by any embodiment of the invention, wherein the signal light generated by the signal light source and the pumping light generated by the pumping light source are irradiated to the active region 4 in the vertical cavity semiconductor optical amplifier. For the rest of the structure of the vertical cavity semiconductor optical amplifying system, reference may be made to the prior art, and further description thereof is omitted here.
The vertical cavity semiconductor optical amplifier provided by the embodiment of the invention has a higher optical power safety threshold, so that the vertical cavity semiconductor optical amplification system provided by the embodiment of the invention also has a higher optical power safety threshold, and the reliability of the vertical cavity semiconductor optical amplification system is effectively improved.
In the following, a method for manufacturing a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention is described, and the following manufacturing method and the structure of the vertical cavity semiconductor optical amplifier described above may be referred to correspondingly.
Referring to fig. 5 to 9, fig. 5 to 9 are process flow charts of a method for manufacturing a vertical cavity semiconductor optical amplifier according to an embodiment of the present invention.
Referring to fig. 5, in an embodiment of the present invention, a method for manufacturing a vertical cavity semiconductor optical amplifier includes:
s101: and fixedly connecting a first chip in the light amplification chips on the bottom heat sink surface.
Referring to fig. 6, in the embodiment of the present invention, the light amplification chip 3 includes an active region 4, a buffer region 5 located on a side of the active region 4 facing the bottom heat sink 1, a blocking region 6 located on a side of the active region 4 facing away from the bottom heat sink 1, and a substrate 9 located on a surface of the blocking region 6 facing away from the bottom heat sink 1; the first chip 31 further comprises a bottom cavity mirror 7 located on the side of the active region 4 of the first chip 31 facing the bottom heat sink 1.
The detailed structures of the optical amplifying chip 3, the first chip 31 and the bottom heat sink 1 have been described in detail in the above embodiments of the present invention, and are not described herein again. The detailed connection relationship between the bottom heat sink 1 and the first chip 31 is also described in detail in the above embodiments of the present invention, and will not be described herein again. In the embodiment of the present invention, the light amplification chip 3 further includes a bottom, that is, the blocking region 6, the active region 4 and the buffer region 5 are all sequentially grown on the bottom surface. Specifically, the blocking region 6 is disposed on the surface of the substrate 9, the active region 4 is disposed on a side of the blocking region 6 facing away from the substrate, and the buffer region 5 is disposed on a side of the active region 4 facing away from the substrate. For the first chip 31, the bottom cavity mirror 7 is located on the side of the active region 4 facing away from the bottom, and the bottom cavity mirror 7 is usually located between the buffer region 5 and the active region 4; i.e. the surface of the substrate 9 of the first chip 31, is typically provided with a barrier region 6, an active region 4, a bottom mirror 7 and a buffer region 5 in that order.
In this step, the first chip 31 is fixedly connected to the bottom heat sink 1. When the bottom heatsink 1 is made of a non-metal material, the bottom heatsink 1 and the first chip 31, and generally the buffer area 5 of the first chip 31, are bonded to each other through a material bonding process to be fixedly connected; when the bottom heat sink 1 is made of a metal material, the bottom heat sink 1 and the buffer area 5 of the first chip 31 are generally soldered to each other by a soldering process to be fixedly connected. Of course, depending on the kind of the material of the bottom heat sink 1, the bottom heat sink 1 and the first chip 31 may be fixedly connected by other processes, and the specific connection process is not particularly limited in this step.
S102: the substrate is removed.
Referring to fig. 7, in this step, the substrate 9 of the first chip 31 is typically removed by a substrate removal process, which cuts off to the barrier region 6 of the first chip 31, i.e. the barrier region 6 is a cut-off region of the substrate removal process. After this step, the exposed surface of the blocking region 6 is typically cleaned for subsequent bonding of the light amplification chip 3 and the top heat sink 2.
S103: and sequentially stacking and arranging the light amplification chips on the surface of the first chip back to the bottom heat sink along the thickness direction of the light amplification chips, and removing the substrate of the light amplification chips which are fixedly connected at present after any one light amplification chip is arranged.
Referring to fig. 8, in the embodiment of the present invention, between any two adjacent light amplification chips 3, the blocking area 6 of the light amplification chip 3 facing to the bottom heat sink 1 side is in contact with the buffer area 5 of the light amplification chip 3 facing away from the bottom heat sink 1 side for fixed connection; the light amplification chip 3 which is farthest away from the bottom heat sink 1 in the light amplification chip 3 is a second chip 32, and the second chip 32 further comprises a top cavity mirror 8 which is positioned at one side of the active area 4 in the second chip 32, which faces away from the bottom heat sink 1.
The detailed connection relationship between the optical amplifier chips 3 has been described in detail in the above embodiments of the present invention, and will not be described herein again. In this step, the optical amplification chips 3 are sequentially bonded on the side of the first chip 31 facing away from the bottom heat sink 1 to realize the stacked arrangement of the optical amplification chips 3 in the thickness direction. Specifically, when any optical amplifier chip 3 is bonded, the buffer region 5 of the optical amplifier chip 3 is bonded to the blocking region 6 of the previous optical amplifier chip 3, and after any optical amplifier chip 3 is bonded, the substrate 9 of the currently bonded optical amplifier chip 3 is removed by a substrate removal process.
The last optical amplifier chip 3 bonded in sequence along the thickness direction is the second chip 32, and the detailed structure of the second chip 32 has been described in detail in the above embodiments of the present invention, and is not described herein again. The top cavity mirror 8 is usually located between the active region 4 and the blocking region 6 in the second chip 32, that is, the blocking region 6, the top cavity mirror 8, the active region 4 and the buffer region 5 are sequentially arranged on the surface of the substrate 9 of the second chip 32.
In the embodiment of the invention, the thickness of the optical amplification chip 3 can be reduced after the substrate 9 is removed, which is beneficial to the high-efficiency pump light input and the oscillation amplification process of signal light; meanwhile, the whole thickness of the vertical cavity semiconductor optical amplifier is controlled after the chip substrate 9 is removed, so that the high heat conductivity of the optical amplifier in the vertical direction is favorably realized, the bottom heat sink 1 and the top heat sink 2 are convenient for leading the waste heat generated when the active area 4 works out of the optical amplification chip 3, and the optical amplifier is ensured to work at a proper temperature.
S104: and arranging a top heat sink on the surface of one side of the second chip, which is back to the bottom heat sink, so as to manufacture the vertical cavity semiconductor optical amplifier.
Referring to fig. 9, the detailed structure of the top heatsink 2 has been described in detail in the above embodiments of the present invention, and will not be described herein again. In this step, since the top heatsink 2 is usually a non-metallic material, the top heatsink 2 is usually bonded to the second chip 32, usually the barrier region 6 of the second chip 32, by a material bonding process to form a fixed connection. Of course, depending on the kind of the material of the top heat sink 2, the top heat sink 2 and the second chip 32 may be fixedly connected by other processes, and the specific connection process is not particularly limited in this step.
According to the preparation method of the vertical cavity semiconductor optical amplifier provided by the embodiment of the invention, the thickness of the optical amplification chip 3 can be reduced after the substrate 9 is removed, and the high-efficiency pump light input and signal light oscillation amplification process is facilitated; meanwhile, the whole thickness of the vertical cavity semiconductor optical amplifier is controlled after the chip substrate 9 is removed, so that the high heat conductivity of the optical amplifier in the vertical direction is favorably realized, the bottom heat sink 1 and the top heat sink 2 are convenient for leading the waste heat generated when the active area 4 works out of the optical amplification chip 3, and the optical amplifier is ensured to work at a proper temperature.
In the prepared vertical cavity semiconductor optical amplifier, because the length of the resonant cavity between the top cavity mirror 8 and the bottom cavity mirror 7 is determined by the thicknesses of the plurality of optical amplification chips 3, the thickness of each structure in each corresponding optical amplification chip 3 can be lower, so that the defects of each optical amplification chip 3 can be ensured to be less when the optical amplification chips 3 are grown and prepared; meanwhile, the length of the resonant cavity between the top cavity mirror 8 and the bottom cavity mirror 7 is determined by the thicknesses of the multiple optical amplification chips 3 and is not interfered by a growth process, so that the length of the resonant cavity can be longer, the optical power density in the resonant cavity can be effectively reduced when light oscillates in the resonant cavity, and under the condition that a material damage threshold is preset, an optical power safety threshold in the cavity is increased, so that the vertical cavity semiconductor optical amplifier has a higher optical power safety threshold.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in Random Access Memory (RAM), memory, Read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The vertical cavity semiconductor optical amplifier, the vertical cavity semiconductor optical amplification system and the preparation method of the vertical cavity semiconductor optical amplifier provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A vertical cavity semiconductor optical amplifier is characterized by comprising a top heat sink, a bottom heat sink and at least two optical amplification chips;
the top heat sink and the bottom heat sink are oppositely arranged along the thickness direction, the light amplification chip is positioned between the top heat sink and the bottom heat sink, and at least two light amplification chips are stacked along the thickness direction to be fixedly connected;
the light amplification chip comprises an active region, a buffer region and a blocking region, wherein the buffer region is positioned on one side, facing the bottom heat sink, of the active region, and the blocking region is positioned on one side, facing the top heat sink, of the active region; between any two adjacent light amplification chips, the blocking area of the light amplification chip facing to one side of the bottom heat sink is contacted with the buffer area of the light amplification chip facing to one side of the top heat sink so as to be fixedly connected;
the light amplification chip in contact with the bottom heat sink is a first chip, and the first chip further comprises a bottom cavity mirror positioned on one side, facing the bottom heat sink, of an active area in the first chip; the light amplification chip in contact with the top heat sink is a second chip, and the second chip further comprises a top cavity mirror positioned on one side, facing the top heat sink, of an active area in the second chip;
the blocking region is a cut-off region of the substrate removal process.
2. The vertical cavity semiconductor optical amplifier of claim 1, wherein the bottom cavity mirror is located in the first chip with an active region facing the bottom heat sink side surface, the buffer region of the first chip is located in the bottom cavity mirror facing the bottom heat sink side surface, and the bottom heat sink is fixedly connected with the buffer region of the first chip; the top cavity mirror is positioned in the second chip, the active area faces to the top heat sink side surface, the blocking area of the second chip is positioned in the top cavity mirror faces to the top heat sink side surface, and the top heat sink is fixedly connected with the blocking area of the second chip.
3. A vertical cavity semiconductor optical amplifier according to claim 2 wherein the bottom cavity mirror and the top cavity mirror are bragg mirrors.
4. The vertical cavity semiconductor optical amplifier of claim 1, wherein the bottom heatsink is made of a non-metallic material, and the bottom heatsink and the first chip are bonded to each other to be fixedly connected.
5. The vertical cavity semiconductor optical amplifier of claim 1, wherein the bottom heat sink is made of a metal material, and the bottom heat sink and the first chip are welded to each other to be fixedly connected.
6. The vertical cavity semiconductor optical amplifier of claim 1, wherein the top heatsink is made of a non-metallic material, and the top heatsink and the second chip are bonded to each other to be fixedly connected.
7. The vertical cavity semiconductor optical amplifier of any one of claims 1 to 6, wherein any one of the active regions of the optical amplifier chip corresponds to a same gain optical wavelength.
8. The vertical cavity semiconductor optical amplifier of any one of claims 1 to 6, wherein the wavelengths of the gain light corresponding to any one of the active regions of the optical amplifier chips are different.
9. A vertical cavity semiconductor optical amplification system comprising a signal light source, a pump light source and a vertical cavity semiconductor optical amplifier as claimed in any one of claims 1 to 8; and the signal light generated by the signal light source and the pump light generated by the pump light source irradiate the active region in the vertical cavity semiconductor optical amplifier.
10. A method for preparing a vertical cavity semiconductor optical amplifier is characterized by comprising the following steps:
fixedly connecting a first chip in the light amplification chip on the bottom heat sink surface; the light amplification chip comprises an active region, a buffer region, a blocking region and a substrate, wherein the buffer region is positioned on one side, facing the bottom heat sink, of the active region, the blocking region is positioned on one side, facing away from the bottom heat sink, of the active region, and the substrate is positioned on one side surface, facing away from the bottom heat sink, of the blocking region; the first chip also comprises a bottom cavity mirror positioned on one side of the active area in the first chip facing the bottom heat sink; the blocking area is a cut-off area of a substrate removing process;
removing the substrate;
sequentially stacking and arranging the optical amplification chips on the surface of the first chip, which is opposite to the bottom heat sink, along the thickness direction of the optical amplification chips, and removing the substrate of the currently fixedly connected optical amplification chip after arranging any one optical amplification chip; between any two adjacent light amplification chips, the blocking area of the light amplification chip facing to one side of the bottom heat sink is contacted with the buffer area of the light amplification chip back to one side of the bottom heat sink so as to be fixedly connected; the light amplification chip which is farthest away from the bottom heat sink in the light amplification chips is a second chip, and the second chip further comprises a top cavity mirror which is positioned on one side, back to the bottom heat sink, of an active area in the second chip;
and arranging a top heat sink on the surface of one side of the second chip, which is back to the bottom heat sink, so as to manufacture the vertical cavity semiconductor optical amplifier.
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Application publication date: 20190920 Assignee: Jiangsu Changguang Spacetime Optoelectronics Technology Co.,Ltd. Assignor: Changchun Zhongke Changguang Space-time Photoelectric Technology Co.,Ltd. Contract record no.: X2024220000008 Denomination of invention: A vertical cavity semiconductor optical amplifier, optical amplification system, and preparation method Granted publication date: 20200929 License type: Exclusive License Record date: 20240822 |