CN110265868B - Broadband chaotic semiconductor laser chip with tunable wavelength - Google Patents
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- CN110265868B CN110265868B CN201910373323.8A CN201910373323A CN110265868B CN 110265868 B CN110265868 B CN 110265868B CN 201910373323 A CN201910373323 A CN 201910373323A CN 110265868 B CN110265868 B CN 110265868B
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
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Abstract
The invention discloses a wavelength tunable broadband chaotic semiconductor laser chip, which comprises a left DBR laser (A), a passive optical waveguide (B) and a right DBR laser (C); the right end of the left DBR laser (A) is connected with the left side of a passive optical waveguide (B), and the right side of the passive optical waveguide (B) is connected with the left side of a right DBR laser (C); wherein, the left DBR laser (A) and the right DBR laser (C) are both of three-section structures; the left DBR laser (A) is sequentially provided with a phase region, a gain region and a grating region from left to right, and the right DBR laser (C) is sequentially provided with a grating region, a gain region and a phase region from left to right; the grating area is grown with grating area electrodes, the phase area is grown with phase area electrodes, the gain area is grown with gain area electrodes, and the grating area is a distributed Bragg reflection grating. The chip structure of the invention has small volume, good stability, low cost and strong practicability.
Description
Technical Field
The invention relates to the field of integrated chaotic lasers, in particular to a broadband chaotic laser chip with tunable wavelength.
Background
Due to the characteristics of initial value sensitivity, long-term unpredictability, noise-like and the like, the chaotic laser has important application in the fields of ultra-wideband signal generators, high-speed random number generation, optical fiber sensing, optical fiber fault detection, laser radars, secret optical communication and the like.
Optical chaotic secure communication has attracted considerable attention since the first demonstration of chaotic synchronization by PECORA and CARROL in 1990. The optical chaotic secret communication system adopts a noise-like chaotic signal as a chaotic carrier at a transmitting end to load a required transmission signal, and can realize the recovery of the transmission signal at a receiving end based on a chaotic filtering effect and a chaotic synchronization mechanism. The communication capacity is a key technology for realizing the practicability of the chaotic secret optical communication. At present, in the communication field, a multi-channel transmission mode such as wavelength division multiplexing is adopted to increase the system capacity. In practical application, the wavelength division multiplexing optical chaos secret system expects that the central wavelength of the chaos carrier is continuously tunable in a large range. The center wavelengths of the commonly used Distributed Feedback Bragg (DFB) laser and Vertical Cavity Surface Emitting (VCSEL) laser can only be thermally tuned, and the tunable range is small, which is difficult to meet the requirements of the communication system. The chaotic laser signal with tunable central wavelength also has important application in optical network breakpoint detection and optical fiber sensing monitoring. The chaotic signal can be used as an ideal radar and ranging signal due to the characteristics of wide band, good correlation and the like. The chaotic OTDR taking the chaotic laser as the detection signal can solve the contradiction that the measurement distance and the spatial resolution cannot be considered at the same time, and further, in order to solve the problems of multiple branches, dense nodes and the like, a tunable chaotic signal source can be used for replacing the traditional single-path pulse signal, so that the position of a fault point can be accurately positioned while the multi-path detection is realized.
Xiaopiqiong et al propose to use fiber bragg grating as the external cavity of the weak resonant cavity fabry-perot laser to generate a broadband chaotic signal with tunable central wavelength, but the device is composed of a plurality of independent devices, and the tunable range is only about 10nm (broadband chaotic signal generating device with tunable central wavelength, ZL 201720578585.4); yuan-national-coma et al have proposed a tunable optical chaotic signal generating apparatus (tunable optical chaotic signal generating apparatus, ZL 201320587737.9) based on an annular semiconductor laser, which can adjust the central wavelength of a chaotic signal by adjusting a DBR laser; wangbang et al have proposed a tunable chaotic signal generating device based on FP laser and Bragg grating (Wangna, Wangbang, Zhangjiang, using tunable chaotic Fabry-Perot laser to implement breakpoint detection [ J ]. Photonic newspaper, 2012, 41(11) ] of wavelength division multiplexing passive optical network. The tunable chaotic signal generating devices provide more choices for the application of chaotic laser in various fields.
Disclosure of Invention
The invention provides a broadband chaotic semiconductor laser chip with tunable wavelength, aiming at solving the problems of low communication capacity, limited bandwidth, low integration level and the like of the conventional chaotic semiconductor laser, wherein the semiconductor laser chip has tunable central wavelength and comprises the following tuning processes: the center wavelength of the laser is controlled by adjusting the current on the metal electrode of the DBR (distributed Bragg reflection) laser, and the output chaotic signal is tuned. The innovation points are that the center wavelength of the output chaotic signal is tunable, the structure is simple, and the integration is strong.
The invention is realized by adopting the following technical scheme,
a wavelength tunable broadband chaotic semiconductor laser chip comprises a left DBR laser, a passive optical waveguide and a right DBR laser; the right end of the left DBR laser is connected with the left side of the passive optical waveguide, and the right side of the passive optical waveguide is connected with the left side of the right DBR laser.
The left DBR laser and the right DBR laser are of a three-section structure and comprise a grating area, a phase area and a gain area, grating area electrodes grow on the grating area, phase area electrodes grow on the phase area, and gain area electrodes grow on the gain area. Therefore, the wavelength tunable broadband chaotic semiconductor laser chip is a seven-segment monolithic integrated laser chip, and the specific structure is as follows from left to right: phase area, gain area, grating area, passive optical waveguide area, grating area, gain area, phase area.
The central wavelength frequency difference between the left DBR laser and the right DBR laser is 10 GHz-15 GHz, and the output power deviation of the left DBR laser and the right DBR laser is lower than 70%.
The left DBR laser and the right DBR laser generate chaotic optical signals in a mutual injection and optical feedback mode.
The implementation mode of the broadband chaotic semiconductor laser chip with tunable wavelength comprises the chaotic signal generation and the chaotic signal center wavelength tuning process. The generation process of the chaotic signal is as follows: the output laser signal of the left DBR laser is injected into the right DBR laser through the passive optical waveguide; and the output laser signal of the right DBR laser is injected into the left DBR laser through the passive optical waveguide. Simultaneously, the grating of left DBR laser also can carry out feedback disturbance to the output signal of right DBR laser, and the grating of right DBR laser carries out feedback disturbance to the output signal of left DBR laser, and four ways signal intercoupling produces the chaotic signal of broadband. The tuning process of the central wavelength of the chaotic signal comprises the following steps: the center wavelength of the output laser of the two lasers is controlled by adjusting the bias current applied to the metal electrode of the grating region of the left DBR laser and the bias current applied to the metal electrode of the grating region of the right DBR laser, and the center wavelength of the chaotic signal is controlled by the output light of the left DBR laser and the output light of the right DBR laser through mutual disturbance. The center wavelength of the chaotic signal is different from the center wavelength of the left DBR laser or the center wavelength of the right DBR laser. Or, the output signal of any DBR laser is adjusted, the detuning amount of the two lasers is changed along with the adjustment, and the center wavelength of the output chaotic signal is changed due to mutual disturbance of the two laser signals, so that the aim of tuning the chaotic signal is fulfilled.
The invention has the following beneficial effects:
1. the chaotic laser chip with the tunable central wavelength provided by the invention has the advantages of simple structure and high integration level.
2. The invention adopts a mode of mutual injection and optical feedback of two three-section DBR lasers to generate chaotic signals, the output wavelength range of the DBR lasers can cover a complete C wave band or L wave band, the DBR lasers have high working speed, high output power and high reliability, the central wavelengths of the two lasers are controlled by adjusting the working current of the DBR lasers, the tuning range is about 20nm, the central wavelength of the output chaotic signals is further tuned, the detuning quantity between the two lasers is accurately and widely regulated, and the central wavelength of the output chaotic signals is continuously adjustable in a wide range.
3. The chip structure of the invention has small volume, good stability, low cost, strong practicability and good popularization and application value.
Drawings
Fig. 1 shows a schematic structural view of the present invention.
In fig. 1: a-left DBR laser, B-passive optical waveguide, C-right DBR laser.
Fig. 2 shows a schematic structural diagram of a specific embodiment of a broadband chaotic semiconductor laser chip with tunable wavelength.
In FIG. 2, 1-left DBR laser phase section electrode, 2-left DBR laser gain section electrode, 3-left DBR laser grating section electrode, 4-right DBR laser grating section electrode, 5-right DBR laser gain section electrode, 6-right DBR laser phase section electrode.
Detailed Description
The following detailed description of specific embodiments of the invention refers to the accompanying drawings.
A wavelength tunable broadband chaotic semiconductor laser chip comprises a left DBR laser A, a passive optical waveguide B and a right DBR laser C, as shown in figure 1; the left end of the left DBR laser A is connected with the left side of the passive optical waveguide B, and the right side of the passive optical waveguide B is connected with the left side of the right DBR laser C. The left DBR laser and the right DBR laser are mutually injected to provide external disturbance for the opposite laser, and chaotic signals are generated. The laser wavelength output by the left DBR laser and the laser wavelength output by the right DBR laser can be changed by adjusting the bias current applied to the metal electrodes of the left DBR laser and the right DBR laser, and further the tunable central wavelength of the chaotic signal is realized.
As shown in fig. 2, the left DBR laser a and the right DBR laser C are both of a three-section structure, the left DBR laser a sequentially includes a phase region, a gain region, and a grating region from left to right, and the grating region is a distributed bragg reflection grating; the right DBR laser C is sequentially provided with a grating area, a gain area and a phase area from left to right, and the grating area is a distributed Bragg reflection grating. The grating area is grown with grating area electrodes, the phase area is grown with phase area electrodes, the gain area is grown with gain area electrodes, and the grating area is a distributed Bragg reflection grating. The passive optical waveguide B is a strip, and has a function of mainly laterally limiting the propagation of light and guiding the light.
The tuning mode is that the center wavelength of the laser output by the two lasers is controlled by adjusting the bias current applied to the left DBR laser grating area electrode 3 and the right DBR laser grating area electrode 4, a new optical frequency component is generated after mutual injection disturbance, and the center wavelength of the chaotic signal is changed. Alternatively, the center wavelength of the laser output from the DBR laser can be adjusted by adjusting the bias current of the phase section electrode (1 or 6), and the center wavelength of the laser output from the DBR laser can also be adjusted by adjusting the bias current of the gain section electrode (2 or 5).
During implementation, the left DBR laser A and the right DBR laser C are identical in structure, grow on the same substrate, and are integrally manufactured by adopting a semiconductor process, so that the stability of a chip can be enhanced. The left DBR laser A and the right DBR laser C provide output light and injection light for the whole chip, and the left DBR laser A and the right DBR laser C generate chaotic light signals in a mutual injection and light feedback mode. A metal electrode grows on the phase region of the DBR laser, and an output optical signal can be adjusted by adjusting the current of the phase region electrode; and a metal electrode is grown on the gain region of the DBR laser, and an output optical signal can be adjusted by adjusting the electrode current of the gain region. The tuning mode is that the central wavelength and the intensity of laser output by the two lasers are controlled by adjusting the current on the metal electrodes of the left DBR laser and the right DBR laser, and new optical frequency components can be generated after mutual injection disturbance, so that the central wavelength and the intensity of chaotic signals are changed. The frequency difference of the central wavelengths of the left DBR laser A and the right DBR laser C is 10 GHz-15 GHz, and the deviation of the output powers of the left DBR laser A and the right DBR laser C is lower than 70%. The parameter mismatch can effectively inhibit the locking synchronization effect generated when the left DBR laser A and the right DBR laser C are injected into each other, and the two lasers have certain frequency detuning and can enhance the bandwidth.
During specific work, the implementation mode of the broadband chaotic semiconductor laser chip with tunable wavelength comprises the chaotic signal generation and the chaotic signal center wavelength tuning process. The generation process of the chaotic signal is as follows: the output laser signal of the left DBR laser A is injected into the right DBR laser C through the passive optical waveguide B; the output laser signal of the right DBR laser C is injected into the left DBR laser a through the passive optical waveguide B. Meanwhile, the grating of the left DBR laser can also disturb the output signal of the right DBR laser, the grating of the right DBR laser disturbs the output signal of the left DBR laser, and four paths of signals are coupled with each other to generate a broadband chaotic signal. The tuning process of the central wavelength of the chaotic signal comprises the following steps: the center wavelength of output light of the left DBR laser A or the right DBR laser C is adjusted, the detuning amount of the two lasers is changed accordingly, and the center wavelength of the output chaotic signal is changed due to mutual disturbance of the two laser signals, so that the purpose of tuning the chaotic signal is achieved.
The above embodiments are merely exemplary to illustrate the present invention, and the specific details of the embodiments are only for illustrating the present invention and do not represent all technical solutions under the conception of the present invention, and any simple changes, equivalent substitutions or modifications which are based on the present invention to solve substantially the same technical problems or achieve substantially the same technical effects are all within the scope of the present invention.
Claims (1)
1. A wavelength tunable broadband chaotic semiconductor laser chip is characterized in that: the laser comprises a left DBR laser (A), a passive optical waveguide (B) and a right DBR laser (C); the right end of the left DBR laser (A) is connected with the left side of a passive optical waveguide (B), and the right side of the passive optical waveguide (B) is connected with the left side of a right DBR laser (C);
wherein, the left DBR laser (A) and the right DBR laser (C) are both of three-section structures; the left DBR laser (A) is sequentially provided with a phase region, a gain region and a grating region from left to right, and the right DBR laser (C) is sequentially provided with a grating region, a gain region and a phase region from left to right; a grating area electrode grows on the grating area, a phase area electrode grows on the phase area, a gain area electrode grows on the gain area, and the grating area is a distributed Bragg reflection grating;
the difference between the central wavelength frequency of the left DBR laser (A) and the central wavelength frequency of the right DBR laser (C) is 10 GHz-15 GHz, and the output power deviation of the left DBR laser (A) and the right DBR laser (C) is lower than 70%;
the left DBR laser (A) and the right DBR laser (C) generate chaotic optical signals in a mutual injection and optical feedback mode;
and the left DBR laser (A) and the right DBR laser (C) are grown on the same substrate and integrally manufactured.
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| CN111147144B (en) * | 2019-12-06 | 2020-12-22 | 太原理工大学 | Chaotic light secret communication transceiver module of large key space |
| CN111129948B (en) * | 2019-12-06 | 2021-10-08 | 太原理工大学 | Broadband chaotic laser chip based on weak gain coupling DFB laser |
| CN111162454B (en) * | 2020-01-02 | 2021-03-12 | 中国科学院半导体研究所 | Broadband tuning system and tuning method |
| CN112928599B (en) * | 2021-02-07 | 2022-03-22 | 南京大学 | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof |
| CN113300218B (en) * | 2021-05-22 | 2022-10-14 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN114400501B (en) * | 2021-12-02 | 2022-12-09 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
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| CN104953468A (en) * | 2014-03-25 | 2015-09-30 | 中国科学院半导体研究所 | Four-segment amplification feedback laser structure for chaotic light emission |
| CN104158085B (en) * | 2014-08-30 | 2017-04-12 | 太原理工大学 | No-time-delay flat-frequency-spectrum broadband photon integrated chaos semiconductor laser |
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