CN110265868A - The broadband chaos semiconductor laser chip of tunable wave length - Google Patents
The broadband chaos semiconductor laser chip of tunable wave length Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3503—Structural association of optical elements, e.g. lenses, with the non-linear optical device
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Abstract
The invention discloses a kind of broadband chaos semiconductor laser chips of tunable wave length, including left DBR laser (A), passive optical waveguide (B) and right DBR laser (C)；On the left of left DBR laser (A) the right end connected with passive optical waveguide (B), connected on the left of right DBR laser (C) on the right side of the passive optical waveguide (B)；Wherein, left DBR laser (A) and right DBR laser (C) are three stage structure；The left DBR laser (A) is followed successively by phase region, gain region, grating region from left to right, and the right DBR laser (C) is followed successively by grating region, gain region, phase region from left to right；Growth has grating region electrode on grating region, and growth has phase region electrode on phase region, and growth has gain region electrode on gain region, and grating region is distributed Blatt reflective grating.Chip structure of the present invention is small in size, stability is good, at low cost, practical.
Description
Technical field
The present invention relates to integrated chaos laser field, the broadband chaos laser cores of specifically a kind of tunable wave length
Piece.
Background technique
Chaotic laser light is sent out due to characteristics such as its initial value sensitivity, long-term unpredictability and noise likes in ultra-broadband signal
There is important answer in the fields such as raw device, the generation of high speed random number, Fibre Optical Sensor, fiber failure detection, laser radar, security photo-communication
With.
From PECORA and CARROL since nineteen ninety confirms Chaotic Synchronous for the first time, optical chaos secret communication has been caused
The extensive concern of people.Optical chaos secret signalling is loaded using the chaotic signal of noise like as transmitting terminal chaotic carrier
Required transmission signal, and transmission signaling protein14-3-3 can be realized by being based on chaos pass filtering effect and Chaotic Synchronous mechanism in receiving end.
Message capacity is that practical key technology is realized in chaotic secret optic communication.Multi-channel transmission is mostly used such as in the communications field at present
The mode of wavelength-division multiplex increases power system capacity.In practical applications, wavelength division multiplexed light chaotic secret system wishes chaotic carrier
Central wavelength is a wide range of continuously adjustable.Common distributed Feedback Prague (DFB) laser and vertical-cavity surface-emitting
(VCSEL) central wavelength of laser can only carry out thermal tuning, and adjustable extent is smaller, it is difficult to meet the requirement of communication system.In
The chaotic laser light signal of heart tunable wave length also has important application in optical-fiber network breaking point detection and optical fiber sensing monitoring.Chaos
Since its broadband, correlation be good etc., characteristics can be used as ideal radar and distance measuring signal to signal.Believe using chaotic laser light as detection
Number chaos OTDR can solve measurement distance and the contradiction that cannot take into account of spatial resolution, it is further, more in order to solve branch,
The problems such as node is close can replace traditional single channel pulse signal with tunable chaos signal source, can while realizing multi-way detecting
To be accurately positioned the position of fault point.
Xia Guangqiong et al. proposes using fiber bragg grating as the exocoel of weak resonant cavity Fabry-Bo Luo laser,
The tunable Chaotic Wideband Signal of central wavelength is generated, but the device is made of multiple individual devices, tunable range
Only 10nm or so (the Chaotic Wideband Signal generating device that central wavelength is tunable, ZL201720578585.4)；Yuan Guohui etc.
People proposes a kind of tunable optical chaotic signal generating device (tunable optical chaotic signal hair based on annular semiconductor laser
Generating apparatus, ZL201320587737.9), which can adjust the central wavelength of chaotic signal by adjusting DBR laser；King
Peace side et al. proposes the tunable chaotic signal generating device based on FP laser and Bragg grating, and (Wang Na, Wang Anbang open
Breaking point detection [J] light of Wave division multiplexing passive optical network is realized in bright river using tunable chaos Fabry-Perot laser
Sub- journal, 2012,41 (11)).These are tunable, and application of the chaotic signal generating device for chaotic laser light in every field provides
More selections.
Summary of the invention
In order to solve, low existing chaos semiconductor laser message capacity, Bandwidth-Constrained, integrated level be not high to ask the present invention
Topic, provides a kind of broadband chaos semiconductor laser chip of tunable wave length, which is middle cardiac wave
Length is tunable, tunes process are as follows: passes through and adjusts DBR(distributed Blatt reflective) current control on laser metal electrode swashs
The central wavelength of light device, and then the chaotic signal of tuning operation.Innovative point is that the chaotic signal central wavelength exported is tunable,
Structure is simple, and integration is strong.
The present invention adopts the following technical scheme that realization,
A kind of broadband chaos semiconductor laser chip of tunable wave length, including left DBR laser, passive optical waveguide and the right side
DBR laser；Right DBR is connected on the left of the left DBR laser right end connected with passive optical waveguide, on the right side of the passive optical waveguide to swash
On the left of light device.
Wherein, left DBR laser and right DBR laser are three stage structure, including grating region, phase region and gain
Area, growth has grating region electrode on grating region, and growth has phase region electrode on phase region, and growth has gain region electric on gain region
Pole.So the broadband chaos semiconductor laser chip of above-mentioned tunable wave length is seven segmentation Monolithic Integrated Laser chips, tool
Body structure is from left to right are as follows: phase region, gain region, grating region, passive optical waveguide area, grating region, gain region, phase region.
The central wavelength difference on the frequency of the left DBR laser and right DBR laser is 10GHz ~ 15GHz, the output of the two
Power deviation is lower than 70%.
The left DBR laser and right DBR laser generate chaos optical signal by way of mutually injecting plus light is fed back.
The broadband chaos semiconductor laser chip implementation of tunable wave length of the present invention includes chaotic signal
Generation and chaotic signal central wavelength tuning process.The generation process of chaotic signal are as follows: the output laser of left DBR laser
Signal is injected in right DBR laser by passive optical waveguide；The output laser signal of right DBR laser is infused by passive optical waveguide
Enter in left DBR laser.Meanwhile the grating of left DBR laser also can the output signal to right DBR laser carry out feedback disturb
Dynamic, the grating of right DBR laser carries out feedback disturbance to the output signal of left DBR laser, and four road signals intercouple, and generates
Chaotic Wideband Signal.Chaotic signal center wavelength tuning process are as follows: by adjusting added by the metal electrode of left DBR laser grating region
The middle cardiac wave of the control two-laser output laser of bias current added by bias current and right DBR laser grating region metal electrode
Long, the output light of left and right DBR laser is through the central wavelength of mutually disturbance control chaotic signal.The central wavelength of chaotic signal
The central wavelength of central wavelength or right DBR laser different from left DBR laser.Alternatively, adjusting any one DBR laser
Output signal, the mismatching angle of two-laser changes correspondingly, since two-way laser signal mutually disturbs, in the chaotic signal of output
Cardiac wave length changes, and achievees the purpose that tune chaotic signal.
The invention has the following beneficial effects:
1, the tunable chaos laser chip of central wavelength provided by the invention, structure is simple, and integrated level is high.
2, the present invention generates chaotic signal, DBR in such a way that the DBR laser of two three-stage mutually injects plus light is fed back
Laser output wavelength range can cover complete C-band or L-band, have high operating rate, high-output power and height
Reliability, the operating current by adjusting DBR laser control the central wavelength of two-laser, tuning range in 20nm or so,
And then the central wavelength of the chaotic signal of tuning operation, accurately and on a large scale regulate and control the mismatching angle between two-laser, so that
The chaotic signal central wavelength of output is continuously adjusted on a large scale.
3, chip structure of the present invention is small in size, stability is good, at low cost, practical, has and promotes well
Application value.
Detailed description of the invention
Fig. 1 shows structural schematic diagrams of the invention.
In Fig. 1: the left DBR laser of A-, B- passive optical waveguide, the right DBR laser of C-.
Fig. 2 indicates the specific embodiment structural schematic diagram of the broadband chaos semiconductor laser chip of tunable wave length.
In Fig. 2, the left DBR laser phase region electrode of 1-, the left DBR laser gain region electrode of 2-, the left DBR laser light of 3-
Grid region electrode, the right DBR laser grating region electrode of 4-, the right DBR laser gain region electrode of 5-, the right DBR laser phase region of 6-
Electrode.
Specific embodiment
Specific embodiments of the present invention are described in detail with reference to the accompanying drawing.
A kind of broadband chaos semiconductor laser chip of tunable wave length, as shown in Figure 1, include left DBR laser A,
Passive optical waveguide B and right DBR laser C；On the left of left DBR laser A right end connected with passive optical waveguide B, on the right side of passive optical waveguide B
It connects on the left of right DBR laser C.The laser that left and right DBR laser is mutually injected to opposite provides external disturbance, generates chaos
Signal.Adjusting bias current added by left and right DBR laser metal electrode can be changed left and right DBR laser Output of laser wavelength,
And then realize that chaotic signal central wavelength is tunable.
As shown in Fig. 2, left DBR laser A and right DBR laser C are three stage structure, left DBR laser A is past from a left side
The right side is followed successively by phase region, gain region, grating region, and grating region is distributed Blatt reflective grating；Right DBR laser C is from left to right
It is followed successively by grating region, gain region, phase region, grating region is distributed Blatt reflective grating.Growth has grating region electric on grating region
Pole, growth has phase region electrode on phase region, and growth has gain region electrode on gain region, and grating region is distributed Blatt reflective light
Grid.Passive optical waveguide B is strip, and effect is mainly the propagation of laterally limiting light, is guided to light.
Tuning manner is by adjusting added by left DBR laser grating region electrode 3 and right DBR laser grating region electrode 4
The central wavelength of bias current control two-laser output laser can generate new optical frequency ingredient after mutually injecting disturbance, mix
The central wavelength of ignorant signal changes.Alternatively, DBR laser can be adjusted by adjusting the bias current of phase region electrode (1 or 6)
Device exports laser center wavelength, can also be swashed by adjusting gain region electrode (2 or 5) bias current and adjusting DBR laser and export
The central wavelength of light.
When implementation, left DBR laser A is identical as right DBR laser C-structure, grows on the same substrate, using semiconductor
Technique carries out integral manufacturing, can enhance the stability of chip.Left DBR laser A and right DBR laser C provides for entire chip
Output light and injection light, left DBR laser A and right DBR laser C generate chaos light letter by way of mutually injecting plus light is fed back
Number.Growth has metal electrode on DBR laser phase region, can be believed by adjusting the current regulation output light of phase region electrode
Number；Growth has metal electrode on DBR laser gain region, can also adjust output optical signal by adjusting gain region electrode current.
Tuning manner is to export to swash by the current control two-laser adjusted on left DBR laser and right DBR laser metal electrode
The central wavelength and intensity of light can generate new optical frequency ingredient after mutually injecting disturbance, the central wavelength of chaotic signal and strong
Degree changes correspondingly.Wherein, the central wavelength difference on the frequency of left DBR laser A and right DBR laser C is 10GHz ~ 15GHz, the two
Output power deviation be lower than 70%.When parameter mismatch can effectively inhibit left DBR laser A and right DBR laser C mutually to inject
The locking synchronization effect of generation, there are certain frequency detunings can enhance bandwidth for two-laser.
When specific works, the broadband chaos semiconductor laser chip implementation of tunable wave length includes chaotic signal
Generate the tuning process with chaotic signal central wavelength.The generation process of chaotic signal are as follows: the output laser of left DBR laser A
Signal is injected in right DBR laser C by passive optical waveguide B；The output laser signal of right DBR laser C passes through passive light wave
B is led to inject in left DBR laser A.Meanwhile the grating of left DBR laser can also disturb the output signal of right DBR laser
Dynamic, the grating of right DBR laser disturbs the output signal of left DBR laser, and four road signals intercouple, and generates broadband
Chaotic signal.Chaotic signal center wavelength tuning process are as follows: adjust the output light of left DBR laser A or right DBR laser C
Central wavelength, the mismatching angle of two-laser changes correspondingly, since two-way laser signal mutually disturbs, in the chaotic signal of output
Cardiac wave length changes, and achievees the purpose that tune chaotic signal.
Embodiments above only does illustrative explanation to the present invention, and the case study on implementation detail is merely to explanation
The present invention does not represent whole technical solutions under present inventive concept, any that essentially identical technology is solved based on the present invention
Problem, or realize essentially identical technical effect, made ground simple change, equivalent replacement or modification etc. belong to this hair
In bright protection scope.
Claims (2)
1. a kind of broadband chaos semiconductor laser chip of tunable wave length, it is characterised in that: including left DBR laser (A),
Passive optical waveguide (B) and right DBR laser (C)；On the left of left DBR laser (A) the right end connected with passive optical waveguide (B), institute
It states and is connected on the left of right DBR laser (C) on the right side of passive optical waveguide (B)；
Wherein, left DBR laser (A) and right DBR laser (C) are three stage structure；The left DBR laser (A) is from a left side
Turn right and be followed successively by phase region, gain region, grating region, the right DBR laser (C) be followed successively by from left to right grating region, gain region,
Phase region；Growth has grating region electrode on grating region, and growth has phase region electrode on phase region, and growth has gain region on gain region
Electrode, grating region are distributed Blatt reflective grating；
The central wavelength difference on the frequency of the left DBR laser (A) and right DBR laser (C) are 10GHz ~ 15GHz, the two it is defeated
Power deviation is lower than 70% out；
The left DBR laser (A) and right DBR laser (C) generate chaos optical signal by way of mutually injecting plus light is fed back.
2. the broadband chaos semiconductor laser chip of tunable wave length according to claim 1, it is characterised in that: left
DBR laser (A) and right DBR laser (C) are grown on the same substrate, integral manufacturing.
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Cited By (6)
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| CN111129948A (en) * | 2019-12-06 | 2020-05-08 | 太原理工大学 | Broadband chaotic laser chip based on weak gain coupling DFB laser |
| CN111147144A (en) * | 2019-12-06 | 2020-05-12 | 太原理工大学 | Chaotic light secret communication transceiver module of large key space |
| CN112928599A (en) * | 2021-02-07 | 2021-06-08 | 南京大学 | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof |
| CN113300218A (en) * | 2021-05-22 | 2021-08-24 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| US20210281044A1 (en) * | 2020-01-02 | 2021-09-09 | Institute Of Semiconductors, Chinese Academy Of Sciences | Broadband tuning system and method |
| CN114400501A (en) * | 2021-12-02 | 2022-04-26 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
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| CN111129948A (en) * | 2019-12-06 | 2020-05-08 | 太原理工大学 | Broadband chaotic laser chip based on weak gain coupling DFB laser |
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| CN112928599A (en) * | 2021-02-07 | 2021-06-08 | 南京大学 | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof |
| CN113300218A (en) * | 2021-05-22 | 2021-08-24 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN113300218B (en) * | 2021-05-22 | 2022-10-14 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN114400501A (en) * | 2021-12-02 | 2022-04-26 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
| CN114400501B (en) * | 2021-12-02 | 2022-12-09 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
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