CN110265868A - Broadband chaotic semiconductor laser chip with tunable wavelength - Google Patents
Broadband chaotic semiconductor laser chip with tunable wavelength Download PDFInfo
- Publication number
- CN110265868A CN110265868A CN201910373323.8A CN201910373323A CN110265868A CN 110265868 A CN110265868 A CN 110265868A CN 201910373323 A CN201910373323 A CN 201910373323A CN 110265868 A CN110265868 A CN 110265868A
- Authority
- CN
- China
- Prior art keywords
- dbr laser
- laser
- area
- grating
- dbr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000000739 chaotic effect Effects 0.000 title claims description 63
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000779745 Backhousia myrtifolia Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000253 optical time-domain reflectometry Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3503—Structural association of optical elements, e.g. lenses, with the non-linear optical device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
技术领域technical field
本发明涉及集成混沌激光器领域，具体是一种波长可调谐的宽带混沌激光器芯片。The invention relates to the field of integrated chaotic lasers, in particular to a broadband chaotic laser chip with tunable wavelength.
背景技术Background technique
混沌激光由于其初值敏感性、长期不可预测性与类噪声等特性，在超宽带信号发生器、高速随机数产生、光纤传感、光纤故障检测、激光雷达、保密光通信等领域有重要应用。Due to its initial value sensitivity, long-term unpredictability, and noise-like characteristics, chaotic lasers have important applications in ultra-wideband signal generators, high-speed random number generation, optical fiber sensing, optical fiber fault detection, laser radar, and secure optical communications. .
自PECORA和CARROL于1990年首次证实混沌同步以来，光混沌保密通信已经引起了人们的广泛关注。光混沌保密通信系统采用类噪声的混沌信号作为发射端混沌载波来加载所需的传输信号，而在接收端基于混沌滤波效应和混沌同步机理可实现传输信号的恢复。通信容量是混沌保密光通信实现实用化的关键技术。目前在通信领域多采用多信道传输如波分复用的方式增加系统容量。在实际应用中，波分复用光混沌保密系统希望混沌载波的中心波长是大范围连续可调谐的。常用的分布式反馈布拉格（DFB）激光器和垂直腔面发射（VCSEL）激光器的中心波长只能进行热调谐，可调范围较小，难以满足通信系统的要求。中心波长可调谐的混沌激光信号在光网络断点检测与光纤传感监测中也有重要的应用。混沌信号由于其宽带、相关性好等特性可作为理想的雷达和测距信号。以混沌激光作为探测信号的混沌OTDR可解决测量距离和空间分辨率不能兼顾的矛盾，进一步的，为了解决支路多，节点密等问题，可用可调谐混沌信号源代替传统的单路脉冲信号，实现多路检测的同时可以精确定位故障点的位置。Since the first demonstration of chaos synchronization by PECORA and CARROL in 1990, optical chaos secure communication has attracted widespread attention. The optical chaos secure communication system uses the noise-like chaotic signal as the chaotic carrier at the transmitting end to load the required transmission signal, and the recovery of the transmission signal can be realized at the receiving end based on the chaotic filtering effect and the chaotic synchronization mechanism. Communication capacity is the key technology for the practical application of chaotic secure optical communication. At present, in the field of communication, multi-channel transmission such as wavelength division multiplexing is mostly used to increase system capacity. In practical application, WDM optical chaotic security system hopes that the center wavelength of chaotic carrier wave can be continuously tuned in a wide range. The central wavelength of commonly used distributed feedback Bragg (DFB) lasers and vertical cavity surface emitting (VCSEL) lasers can only be thermally tuned, and the adjustable range is small, which is difficult to meet the requirements of communication systems. The chaotic laser signal with tunable center wavelength also has important applications in optical network breakpoint detection and optical fiber sensor monitoring. The chaotic signal can be used as an ideal radar and ranging signal due to its characteristics of wide band and good correlation. The chaotic OTDR using chaotic laser as the detection signal can solve the contradiction between measurement distance and spatial resolution. Further, in order to solve the problems of many branches and dense nodes, the traditional single-channel pulse signal can be replaced by a tunable chaotic signal source. While realizing multi-channel detection, the location of the fault point can be precisely located.
夏光琼等人提出利用光纤布拉格光栅作为弱谐振腔法布里-玻罗激光器的外腔，来产生中心波长可调谐的宽带混沌信号，但是该装置是由多个独立器件构成，可调谐范围只有10nm左右（中心波长可调谐的宽带混沌信号发生装置，ZL201720578585.4）；袁国慧等人提出了一种基于环形半导体激光器的可调谐光混沌信号发生装置（可调谐光混沌信号发生装置，ZL201320587737.9），该装置可通过调节DBR激光器来调节混沌信号的中心波长；王安帮等人提出了基于FP激光器与布拉格光栅的可调谐混沌信号发生装置（王娜，王安帮，张明江，利用可调谐的混沌Fabry-Perot激光器实现波分复用无源光网络的断点检测[J]. 光子学报，2012，41(11).）。这些可调谐混沌信号发生装置为混沌激光在各个领域的应用提供了更多的选择。Xia Guangqiong and others proposed to use fiber Bragg grating as the external cavity of the weak cavity Fabry-Perot laser to generate a broadband chaotic signal with tunable center wavelength, but the device is composed of multiple independent devices, and the tunable range is only 10nm Left and right (broadband chaotic signal generator with tunable center wavelength, ZL201720578585.4); Yuan Guohui and others proposed a tunable optical chaotic signal generator based on ring semiconductor laser (tunable optical chaotic signal generator, ZL201320587737.9) , the device can adjust the central wavelength of the chaotic signal by adjusting the DBR laser; Wang Anbang et al. proposed a tunable chaotic signal generator based on FP lasers and Bragg gratings (Wang Na, Wang Anbang, Zhang Mingjiang, using tunable chaotic Fabry- Perot laser realizes breakpoint detection of wavelength division multiplexing passive optical network [J]. Acta Photonica Sinica, 2012, 41(11).). These tunable chaotic signal generators provide more options for the application of chaotic lasers in various fields.
发明内容Contents of the invention
本发明为了解决现有混沌半导体激光器通信容量低、带宽受限、集成度不高等问题，提供了一种波长可调谐的宽带混沌半导体激光器芯片，该半导体激光器芯片是中心波长可调谐的，调谐过程为：通过调节DBR（分布布拉格反射）激光器金属电极上的电流控制激光器的中心波长，进而调谐输出的混沌信号。创新点在于输出的混沌信号中心波长可调谐，结构简单，集成性强。In order to solve the problems of low communication capacity, limited bandwidth and low integration level of existing chaotic semiconductor lasers, the present invention provides a broadband chaotic semiconductor laser chip with tunable wavelength. It is to control the central wavelength of the laser by adjusting the current on the metal electrode of the DBR (distributed Bragg reflection) laser, and then tune the output chaotic signal. The innovation point is that the central wavelength of the output chaotic signal can be tuned, the structure is simple, and the integration is strong.
本发明是采用如下技术方案实现的，The present invention is realized by adopting the following technical solutions,
一种波长可调谐的宽带混沌半导体激光器芯片，包括左DBR激光器、无源光波导和右DBR激光器；所述左DBR激光器右端连接无源光波导左侧，所述无源光波导右侧连接右DBR激光器左侧。A broadband chaotic semiconductor laser chip with tunable wavelength, comprising a left DBR laser, a passive optical waveguide and a right DBR laser; the right end of the left DBR laser is connected to the left side of the passive optical waveguide, and the right side of the passive optical waveguide is connected to the right DBR laser left.
其中，左DBR激光器和右DBR激光器均为三段式结构，包括光栅区、相位区和增益区，光栅区上生长有光栅区电极，相位区上生长有相位区电极，增益区上生长有增益区电极。所以，上述波长可调谐的宽带混沌半导体激光器芯片为七段式单片集成激光器芯片，具体结构从左到右为：相位区、增益区、光栅区、无源光波导区、光栅区、增益区、相位区。Among them, both the left DBR laser and the right DBR laser have a three-stage structure, including a grating area, a phase area, and a gain area. The grating area electrode is grown on the grating area, the phase area electrode is grown on the phase area, and the gain area is grown on the gain area. area electrodes. Therefore, the above wavelength tunable broadband chaotic semiconductor laser chip is a seven-segment monolithic integrated laser chip, and the specific structure is from left to right: phase area, gain area, grating area, passive optical waveguide area, grating area, gain area , Phase area.
所述左DBR激光器与右DBR激光器的中心波长频率差为10GHz~15GHz，二者的输出功率偏差低于70％。The center wavelength frequency difference between the left DBR laser and the right DBR laser is 10GHz-15GHz, and the output power deviation between the two is less than 70%.
所述左DBR激光器与右DBR激光器通过互注入加光反馈的方式产生混沌光信号。The left DBR laser and the right DBR laser generate chaotic optical signals through mutual injection and optical feedback.
本发明所述的波长可调谐的宽带混沌半导体激光器芯片实现方式包括混沌信号的产生与混沌信号中心波长的调谐过程。混沌信号的产生过程为：左DBR激光器的输出激光信号通过无源光波导注入右DBR激光器中；右DBR激光器的输出激光信号通过无源光波导注入左DBR激光器中。同时，左DBR激光器的光栅也会对右DBR激光器的输出信号进行反馈扰动，右DBR激光器的光栅对左DBR激光器的输出信号进行反馈扰动，四路信号相互耦合，产生宽带混沌信号。混沌信号中心波长调谐过程为：通过调节左DBR激光器光栅区金属电极所加偏置电流与右DBR激光器光栅区金属电极所加偏置电流控制两激光器输出激光的中心波长，左、右DBR激光器的输出光经相互扰动控制混沌信号的中心波长。混沌信号的中心波长不同于左DBR激光器的中心波长或右DBR激光器的中心波长。或者，调节任意一个DBR激光器的输出信号，两激光器的失谐量随之改变，由于两路激光信号相互扰动，输出的混沌信号中心波长发生改变，达到调谐混沌信号的目的。The implementation of the wavelength-tunable broadband chaotic semiconductor laser chip of the present invention includes the generation of chaotic signals and the tuning process of the central wavelength of the chaotic signals. The chaotic signal generation process is as follows: the output laser signal of the left DBR laser is injected into the right DBR laser through the passive optical waveguide; the output laser signal of the right DBR laser is injected into the left DBR laser through the passive optical waveguide. At the same time, the grating of the left DBR laser will also feedback and disturb the output signal of the right DBR laser, and the grating of the right DBR laser will feedback and disturb the output signal of the left DBR laser. The four signals are coupled with each other to generate a broadband chaotic signal. The center wavelength tuning process of the chaotic signal is as follows: by adjusting the bias current applied to the metal electrode in the grating area of the left DBR laser and the bias current applied to the metal electrode in the grating area of the right DBR laser to control the center wavelength of the output laser of the two lasers, the left and right DBR lasers The central wavelength of the chaotic signal is controlled by the mutual disturbance of the output light. The center wavelength of the chaotic signal is different from the center wavelength of the left DBR laser or the center wavelength of the right DBR laser. Or, adjust the output signal of any DBR laser, and the detuning amount of the two lasers will change accordingly. Since the two laser signals interfere with each other, the center wavelength of the output chaotic signal will change, so as to achieve the purpose of tuning the chaotic signal.
本发明具有如下有益效果：The present invention has following beneficial effect:
1、本发明提供的中心波长可调谐的混沌激光器芯片，结构简单，集成度高。1. The chaotic laser chip with tunable center wavelength provided by the present invention has simple structure and high integration.
2、本发明采用两个三段式的DBR激光器互注入加光反馈的方式产生混沌信号，DBR激光器输出波长范围能够覆盖完整的C波段或者L波段，具有高工作速率，高输出功率和高可靠性，通过调节DBR激光器的工作电流控制两激光器的中心波长，调谐范围在20nm左右，进而调谐输出的混沌信号的中心波长，精确且大范围的调控两激光器之间的失谐量，使得输出的混沌信号中心波长大范围连续可调。2. The present invention uses two three-stage DBR lasers to inject each other and add optical feedback to generate chaotic signals. The output wavelength range of the DBR laser can cover the complete C-band or L-band, and has high working speed, high output power and high reliability. The central wavelength of the two lasers is controlled by adjusting the working current of the DBR laser, and the tuning range is about 20nm, and then the central wavelength of the output chaotic signal is tuned, and the detuning amount between the two lasers is precisely and widely adjusted, so that the output The central wavelength of the chaotic signal is continuously adjustable in a wide range.
3、本发明所述的芯片结构体积小、稳定性好、成本低，实用性强，具有很好的推广应用价值。3. The chip structure of the present invention is small in size, good in stability, low in cost, strong in practicability, and has good popularization and application value.
附图说明Description of drawings
图1表示本发明的结构示意图。Fig. 1 shows the structural representation of the present invention.
图1中：A-左DBR激光器，B-无源光波导，C-右DBR激光器。In Figure 1: A-left DBR laser, B-passive optical waveguide, C-right DBR laser.
图2表示波长可调谐的宽带混沌半导体激光器芯片的具体实施例结构示意图。Fig. 2 shows a schematic structural diagram of a specific embodiment of a broadband chaotic semiconductor laser chip with tunable wavelength.
图2中，1-左DBR激光器相位区电极，2-左DBR激光器增益区电极，3-左DBR激光器光栅区电极，4-右DBR激光器光栅区电极，5-右DBR激光器增益区电极，6-右DBR激光器相位区电极。In Fig. 2, 1-left DBR laser phase region electrode, 2-left DBR laser gain region electrode, 3-left DBR laser grating region electrode, 4-right DBR laser grating region electrode, 5-right DBR laser gain region electrode, 6 - Right DBR laser phase zone electrode.
具体实施方式Detailed ways
下面结合附图对本发明的具体实施例进行详细说明。Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
一种波长可调谐的宽带混沌半导体激光器芯片，如图1所示，包括左DBR激光器A、无源光波导B和右DBR激光器C；左DBR激光器A右端连接无源光波导B左侧，无源光波导B右侧连接右DBR激光器C左侧。左、右DBR激光器互注入为对面的激光器提供外部扰动，产生混沌信号。调节左、右DBR激光器金属电极所加偏置电流可改变左、右DBR激光器输出激光波长，进而实现混沌信号中心波长可调谐。A wavelength-tunable broadband chaotic semiconductor laser chip, as shown in Figure 1, includes a left DBR laser A, a passive optical waveguide B, and a right DBR laser C; the right end of the left DBR laser A is connected to the left side of the passive optical waveguide B, without The right side of the source optical waveguide B is connected to the left side of the right DBR laser C. The mutual injection of the left and right DBR lasers provides external disturbances for the opposite lasers to generate chaotic signals. Adjusting the bias current applied to the metal electrodes of the left and right DBR lasers can change the output laser wavelengths of the left and right DBR lasers, thereby realizing the tunable central wavelength of the chaotic signal.
如图2所示，左DBR激光器A和右DBR激光器C均为三段式结构，左DBR激光器A从左往右依次为相位区、增益区、光栅区，光栅区为分布布拉格反射光栅；右DBR激光器C从左往右依次为光栅区、增益区、相位区，光栅区为分布布拉格反射光栅。光栅区上生长有光栅区电极，相位区上生长有相位区电极，增益区上生长有增益区电极，光栅区为分布布拉格反射光栅。无源光波导B为条状，其作用主要是侧向限制光的传播，对光进行引导。As shown in Figure 2, the left DBR laser A and the right DBR laser C both have a three-segment structure, and the left DBR laser A consists of a phase area, a gain area, and a grating area from left to right, and the grating area is a distributed Bragg reflection grating; The DBR laser C consists of a grating area, a gain area, and a phase area from left to right, and the grating area is a distributed Bragg reflection grating. A grating area electrode is grown on the grating area, a phase area electrode is grown on the phase area, and a gain area electrode is grown on the gain area, and the grating area is a distributed Bragg reflection grating. The passive optical waveguide B is strip-shaped, and its main function is to limit the propagation of light laterally and guide the light.
调谐方式为通过调节左DBR激光器光栅区电极3与右DBR激光器光栅区电极4所加偏置电流控制两激光器输出激光的中心波长，经过互注入扰动后，会产生新的光频成分，混沌信号的中心波长改变。或者，可以通过调节相位区电极（1或者6）的偏置电流调节DBR激光器输出激光中心波长，也可通过调节增益区电极（2或者5）偏置电流调节DBR激光器输出激光的中心波长。The tuning method is to control the central wavelength of the output laser light of the two lasers by adjusting the bias current applied to the electrode 3 of the grating area of the left DBR laser and the electrode 4 of the grating area of the right DBR laser. After mutual injection disturbance, new optical frequency components and chaotic signals will be generated The center wavelength of the change. Alternatively, the central wavelength of the DBR laser output laser can be adjusted by adjusting the bias current of the phase zone electrode (1 or 6), or the central wavelength of the DBR laser output laser can be adjusted by adjusting the bias current of the gain zone electrode (2 or 5).
实施时，左DBR激光器A与右DBR激光器C结构相同，生长在同一衬底上，采用半导体工艺进行整体制作，可增强芯片的稳定性。左DBR激光器A与右DBR激光器C为整个芯片提供输出光和注入光，左DBR激光器A与右DBR激光器C通过互注入加光反馈的方式产生混沌光信号。DBR激光器相位区上生长有金属电极，可以通过调节相位区电极的电流调节输出光信号；DBR激光器增益区上生长有金属电极，也可通过调节增益区电极电流调节输出光信号。调谐方式为通过调节左DBR激光器与右DBR激光器金属电极上的电流控制两激光器输出激光的中心波长和强度，经过互注入扰动后，会产生新的光频成分，混沌信号的中心波长与强度随之改变。其中，左DBR激光器A与右DBR激光器C的中心波长频率差为10GHz~15GHz，二者的输出功率偏差低于70％。参数失配可以有效抑制左DBR激光器A与右DBR激光器C互注入时发生的锁定同步效应，两激光器存在一定的频率失谐可增强带宽。During implementation, the left DBR laser A and the right DBR laser C have the same structure, are grown on the same substrate, and are fabricated as a whole using semiconductor technology, which can enhance the stability of the chip. The left DBR laser A and the right DBR laser C provide output light and injection light for the entire chip, and the left DBR laser A and the right DBR laser C generate chaotic optical signals through mutual injection and optical feedback. Metal electrodes are grown on the phase region of the DBR laser, and the output optical signal can be adjusted by adjusting the current of the electrode in the phase region; metal electrodes are grown on the gain region of the DBR laser, and the output optical signal can also be adjusted by adjusting the electrode current in the gain region. The tuning method is to control the central wavelength and intensity of the output lasers of the two lasers by adjusting the current on the metal electrodes of the left DBR laser and the right DBR laser. change. Among them, the center wavelength frequency difference between the left DBR laser A and the right DBR laser C is 10GHz~15GHz, and the output power deviation between the two is less than 70%. The parameter mismatch can effectively suppress the lock-in synchronization effect that occurs when the left DBR laser A and the right DBR laser C inject each other, and the frequency mismatch between the two lasers can enhance the bandwidth.
具体工作时，波长可调谐的宽带混沌半导体激光器芯片实现方式包括混沌信号的产生与混沌信号中心波长的调谐过程。混沌信号的产生过程为：左DBR激光器A的输出激光信号通过无源光波导B注入右DBR激光器C中；右DBR激光器C的输出激光信号通过无源光波导B注入左DBR激光器A中。同时，左DBR激光器的光栅也会对右DBR激光器的输出信号进行扰动，右DBR激光器的光栅对左DBR激光器的输出信号进行扰动，四路信号相互耦合，产生宽带混沌信号。混沌信号中心波长调谐过程为：调节左DBR激光器A或者右DBR激光器C的输出光的中心波长，两激光器的失谐量随之改变，由于两路激光信号相互扰动，输出的混沌信号中心波长发生改变，达到调谐混沌信号的目的。When working specifically, the implementation of the wavelength-tunable broadband chaotic semiconductor laser chip includes the generation of chaotic signals and the tuning process of the central wavelength of the chaotic signals. The chaotic signal generation process is as follows: the output laser signal of the left DBR laser A is injected into the right DBR laser C through the passive optical waveguide B; the output laser signal of the right DBR laser C is injected into the left DBR laser A through the passive optical waveguide B. At the same time, the grating of the left DBR laser will also disturb the output signal of the right DBR laser, and the grating of the right DBR laser will disturb the output signal of the left DBR laser. The four signals are coupled with each other to generate a broadband chaotic signal. The tuning process of the center wavelength of the chaotic signal is: adjust the center wavelength of the output light of the left DBR laser A or the right DBR laser C, and the detuning amount of the two lasers will change accordingly. Due to the mutual disturbance of the two laser signals, the center wavelength of the output chaotic signal will change. Change to achieve the purpose of tuning the chaotic signal.
以上具体实施例仅对本发明做示例性的说明，该实施案例具体细节仅是为了说明本发明，并不代表本发明构思下全部技术方案，任何以本发明为基础解决基本相同的技术问题，或实现基本相同的技术效果，所作出地简单变化、等同替换或者修饰等，均属于本发明的保护范围内。The above specific embodiments only illustrate the present invention. The specific details of the implementation case are only for illustrating the present invention, and do not represent all technical solutions under the present invention. To achieve basically the same technical effect, simple changes, equivalent replacements or modifications, etc., all fall within the protection scope of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910373323.8A CN110265868B (en) | 2019-05-07 | 2019-05-07 | Broadband chaotic semiconductor laser chip with tunable wavelength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910373323.8A CN110265868B (en) | 2019-05-07 | 2019-05-07 | Broadband chaotic semiconductor laser chip with tunable wavelength |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110265868A true CN110265868A (en) | 2019-09-20 |
| CN110265868B CN110265868B (en) | 2021-01-01 |
Family
ID=67914231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910373323.8A Active CN110265868B (en) | 2019-05-07 | 2019-05-07 | Broadband chaotic semiconductor laser chip with tunable wavelength |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110265868B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129948A (en) * | 2019-12-06 | 2020-05-08 | 太原理工大学 | Broadband chaotic laser chip based on weakly gain-coupled DFB laser |
| CN111147144A (en) * | 2019-12-06 | 2020-05-12 | 太原理工大学 | Chaotic optical secure communication transceiver module with large key space |
| CN112928599A (en) * | 2021-02-07 | 2021-06-08 | 南京大学 | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof |
| CN113300218A (en) * | 2021-05-22 | 2021-08-24 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| US20210281044A1 (en) * | 2020-01-02 | 2021-09-09 | Institute Of Semiconductors, Chinese Academy Of Sciences | Broadband tuning system and method |
| CN114400501A (en) * | 2021-12-02 | 2022-04-26 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882127A (en) * | 2012-09-19 | 2013-01-16 | 大连理工大学 | Photoinjection-type chaotic photonic integration device and preparation method thereof |
| CN104158085A (en) * | 2014-08-30 | 2014-11-19 | 太原理工大学 | No-time-delay flat-frequency-spectrum broadband photon integrated chaos semiconductor laser |
| CN104953468A (en) * | 2014-03-25 | 2015-09-30 | 中国科学院半导体研究所 | Four-segment amplification feedback laser structure for chaotic light emission |
| CN107749562A (en) * | 2017-11-06 | 2018-03-02 | 山东中芯光电科技有限公司 | Optical module and control method based on reaction type radio-frequency modulations DBR tunable lasers |
| CN107749564A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Height scattering doped optical waveguide feedback produces the Monolithic Integrated Laser chip of chaos light |
| CN107809059A (en) * | 2017-11-16 | 2018-03-16 | 太原理工大学 | InP-base single-chip integration chaos semiconductor laser chip based on random distribution Bragg reflection grating |
| CN108923251A (en) * | 2018-08-01 | 2018-11-30 | 太原理工大学 | A kind of real random code photon integrated chip |
-
2019
- 2019-05-07 CN CN201910373323.8A patent/CN110265868B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882127A (en) * | 2012-09-19 | 2013-01-16 | 大连理工大学 | Photoinjection-type chaotic photonic integration device and preparation method thereof |
| CN104953468A (en) * | 2014-03-25 | 2015-09-30 | 中国科学院半导体研究所 | Four-segment amplification feedback laser structure for chaotic light emission |
| CN104158085A (en) * | 2014-08-30 | 2014-11-19 | 太原理工大学 | No-time-delay flat-frequency-spectrum broadband photon integrated chaos semiconductor laser |
| CN107749562A (en) * | 2017-11-06 | 2018-03-02 | 山东中芯光电科技有限公司 | Optical module and control method based on reaction type radio-frequency modulations DBR tunable lasers |
| CN107749564A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Height scattering doped optical waveguide feedback produces the Monolithic Integrated Laser chip of chaos light |
| CN107809059A (en) * | 2017-11-16 | 2018-03-16 | 太原理工大学 | InP-base single-chip integration chaos semiconductor laser chip based on random distribution Bragg reflection grating |
| CN108923251A (en) * | 2018-08-01 | 2018-11-30 | 太原理工大学 | A kind of real random code photon integrated chip |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129948A (en) * | 2019-12-06 | 2020-05-08 | 太原理工大学 | Broadband chaotic laser chip based on weakly gain-coupled DFB laser |
| CN111147144A (en) * | 2019-12-06 | 2020-05-12 | 太原理工大学 | Chaotic optical secure communication transceiver module with large key space |
| CN111129948B (en) * | 2019-12-06 | 2021-10-08 | 太原理工大学 | Broadband chaotic laser chip based on weakly gain-coupled DFB laser |
| US20210281044A1 (en) * | 2020-01-02 | 2021-09-09 | Institute Of Semiconductors, Chinese Academy Of Sciences | Broadband tuning system and method |
| US11876347B2 (en) * | 2020-01-02 | 2024-01-16 | Institute Of Semiconductors, Chinese Academy Of Sciences | Broadband tuning system and method |
| CN112928599A (en) * | 2021-02-07 | 2021-06-08 | 南京大学 | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof |
| CN113300218A (en) * | 2021-05-22 | 2021-08-24 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN113300218B (en) * | 2021-05-22 | 2022-10-14 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN114400501A (en) * | 2021-12-02 | 2022-04-26 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
| CN114400501B (en) * | 2021-12-02 | 2022-12-09 | 太原理工大学 | Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110265868B (en) | 2021-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110265868A (en) | Broadband chaotic semiconductor laser chip with tunable wavelength | |
| JP3262331B2 (en) | Terminal for frequency division optical communication system | |
| Ito et al. | Picosecond optical pulse generation from an rf modulated AlGaAs dh diode laser | |
| EP1493212B1 (en) | Atomic clock based on an opto-electronic oscillator | |
| US8078063B2 (en) | Monolithic power monitor and wavelength detector | |
| EP2756565B1 (en) | Wavelength tunable comb source | |
| CN101873172B (en) | Millimeter wave generating device based on optic-fiber ring resonator and method thereof | |
| Johnson et al. | Fully stabilized electroabsorption-modulated tunable DBR laser transmitter for long-haul optical communications | |
| CN107086904A (en) | Broadband Chaotic Signal Generator with Tunable Center Wavelength | |
| Zucker et al. | Quantum well interferometric modulator monolithically integrated with 1.55 μm tunable distributed Bragg reflector laser | |
| CN206993129U (en) | Broadband Chaotic Signal Generator with Tunable Center Wavelength | |
| Chai et al. | Wavelength-tunable monolithically integrated chaotic semiconductor laser | |
| Tucker et al. | 10 GHz active mode-locking of a 1.3 μm ridge-waveguide laser in an optical-fibre cavity | |
| CN107565381A (en) | Distributed feedback type semiconductor laser device and integreted phontonics transmitting chip module | |
| CN113055098B (en) | Frequency domain multiplexing propaganda type single photon source of optical communication waveband | |
| Yasaka et al. | Repeated wavelength conversion of 10 Gb/s signals and converted signal gating using wavelength-tunable semiconductor lasers | |
| JP3799062B2 (en) | Optical communication apparatus and system | |
| GB2516679A (en) | Optical source | |
| Stoltz et al. | Low threshold-current, wide tuning-range, butt-joint DBR laser grown with four MOVPE steps | |
| US20020196503A1 (en) | Method and system for dispersion control of electromagnetic signals in communication networks | |
| Dixon et al. | Lightwave device technology | |
| Chen et al. | Concurrent multi-channel transmission of a dwdm silicon photonic transmitter based on a comb laser and microring modulators | |
| Wassin et al. | Application of VCSELs in next-generation telescope array networks such as the Square Kilometre array | |
| Lee et al. | 16-channel tunable VCSEL array with 50-GHz channel spacing for TWDM-PON ONUs | |
| Guo et al. | Experimental demonstration of subnano-second wavelength switching in V-coupled-cavity semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |