CN110262184A - A kind of SRAF method improving aperture layer edge pattern process window - Google Patents
A kind of SRAF method improving aperture layer edge pattern process window Download PDFInfo
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- CN110262184A CN110262184A CN201910529974.1A CN201910529974A CN110262184A CN 110262184 A CN110262184 A CN 110262184A CN 201910529974 A CN201910529974 A CN 201910529974A CN 110262184 A CN110262184 A CN 110262184A
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- secondary graphics
- edge pattern
- sraf
- aperture layer
- process window
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a kind of SRAF method for improving aperture layer edge pattern process window, includes at least: providing edge pattern；In the secondary graphics that the top of the edge pattern, lower section addition level are put；The secondary graphics of vertical display are added in the outside of the edge pattern simultaneously；Oblique upper, obliquely downward on the outside of the edge pattern are separately added into secondary graphics.Process window at poroid graphic edge is smaller, the present invention is fitted with PW model and compares different SRAF sizes and position, is obtained reasonable SRAF addition, can be effectively improved the contrast of edge hole pattern, publishing figure to later period OPC has directive significance, to improve the technique production quality of aperture layer.
Description
Technical field
The present invention relates to semiconductor optical Approximate revision fields, more particularly to a kind of raising aperture layer edge pattern process window
The SRAF method of mouth.
Background technique
Secondary graphics (Sub-Resolution Assist Feature) are usually used in improving the contrast of photoetching process
(contrast), the depth of field (DOF, depth of focus) and technique redundancy (tolerance) of figure.Particularly, poroid
Figure has compared with small process window (such as figure one), the application of SRAF be pole it is necessary to.It is being fitted poroid figure light distribution
When (Aerial intensity cutline), it has been found that the image contrast of edge is lower.Therefore, it is suitable how to be added
SRAF it is most important for the overall performance of aperture layer.
As shown in Figure 1a, Fig. 1 a is shown as the SRAF addition of edge pattern in the prior art, and wherein square hole is domain, item
Shape is SRAF.Fig. 1 b is shown as the cutline result for four, the edge square hole that PW models fitting obtains.It can be seen that existing skill
The art of SRAF addition in to(for) aperture layer edge pattern will appear that degree of fitting is high and the phenomenon that causes edge pattern contrast low.
It is, therefore, desirable to provide a kind of new SRAF method solves the above problems.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of raising aperture layer edge pattern works
The SRAF method of skill window is not high for solving to will appear degree of fitting for the SRAF addition of aperture layer edge pattern in the prior art
And the problem for causing edge pattern contrast low.
In order to achieve the above objects and other related objects, the present invention, which provides, a kind of improves aperture layer edge pattern process window
SRAF method improves the SRAF method of aperture layer edge pattern process window, which is characterized in that the method includes at least following step
It is rapid: Step 1: providing edge pattern；Step 2: the auxiliary figure put in the top of the edge pattern, lower section addition level
Shape；The secondary graphics of vertical display are added in the outside of the edge pattern simultaneously；Step 3: oblique on the outside of the edge pattern
Top, obliquely downward are separately added into secondary graphics.
Preferably, edge pattern described in step 1 is the edge pattern of through-hole in aperture layer.
Preferably, the shape of the edge pattern is square.
Preferably, the edge pattern in step 1 is isolation pattern.
Preferably, the secondary graphics that addition level is put above and below the isolation pattern include the first auxiliary figure
Shape and the second secondary graphics except first secondary graphics；Add respectively on the left side of the isolation pattern and the right simultaneously
The secondary graphics for entering vertical display include the first secondary graphics and the second secondary graphics except first secondary graphics.
Preferably, the shape of first secondary graphics and second secondary graphics is all bar shaped, and described first
The length of secondary graphics is less than the length of second secondary graphics.
Preferably, include in the secondary graphics that oblique upper, obliquely downward that the edge pattern is isolation pattern are separately added into
The third auxiliary figure that the shape is bar shaped is separately added into the upper left side of the isolation pattern, lower left, upper right side and lower right
Shape and the second secondary graphics except the third secondary graphics, and the position pendulum of second, third secondary graphics
It puts respectively with the isolation pattern in 45 degree.
Preferably, the shape is that the length of the third secondary graphics of bar shaped is less than the second auxiliary that the shape is bar shaped
The length of figure.
Preferably, the edge pattern is the edge pattern in the via hole image of one dimensional arrangement.
Preferably, be separately added into above and below the edge pattern the horizontal secondary graphics put include it is parallel and
It is projected on the bar shaped secondary graphics of the via hole image of the one dimensional arrangement and is located at another except the bar shaped secondary graphics
Bar shaped secondary graphics.
It preferably, include the first secondary graphics and position in the secondary graphics that vertical display is added in the outside of the edge pattern
The second secondary graphics except first secondary graphics.
Preferably, it is separately added into oblique upper, the obliquely downward of the edge pattern of the via hole image of the one dimensional arrangement
Secondary graphics include shape be bar shaped third secondary graphics and the second secondary graphics except the third secondary graphics,
And the position of second, third secondary graphics is put respectively with the edge pattern in 45 degree.
Preferably, the shape is that the length of the third secondary graphics of bar shaped is less than the second auxiliary that the shape is bar shaped
The length of figure.
Preferably, the method is used for rule-based insertion technology.
As described above, the SRAF method of raising aperture layer edge pattern process window of the invention, has the advantages that
Process window at poroid graphic edge is smaller, and the present invention is fitted with PW model and compares different SRAF sizes and position, obtains
Reasonable SRAF addition, can effectively improve the contrast of edge hole pattern, and publishing figure to later period OPC has directive significance,
To improve the technique production quality of aperture layer.
Detailed description of the invention
Fig. 1 a is shown as the SRAF addition of edge pattern in the prior art；
Fig. 1 b is shown as the cutline result for four, the edge square hole that PW models fitting obtains；
Fig. 2 is shown as the flow diagram of the SRAF method of raising aperture layer edge pattern process window of the invention；
Fig. 3 is shown as the SRAF addition schematic diagram that edge pattern in the present invention is isolation pattern；
Fig. 4 a is the cutline result that two sbar are added in isolation pattern；
Fig. 4 b is the cutline result after extension sbar length on the basis of sbar in fig.4；
Fig. 4 c is the cutline that second set of SRAF is added on the basis of sbar on four angles of isolation pattern in fig. 4b
As a result；
Fig. 4 d is shown as the cutline result of SRAF addition when edge pattern of the invention is isolation pattern；
Fig. 5 is shown as the SRAF addition schematic diagram of the edge pattern in the via hole image of one dimensional arrangement of the invention；
Fig. 6 a is shown as not using edge pattern in the via hole image of one dimensional arrangement before the SRAF addition invented
Cutline result；
Fig. 6 b is shown as the cutline result of edge pattern SRAF addition in the via hole image of one dimensional arrangement of the invention.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 2 to Fig. 6 b.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Fig. 2, the process that Fig. 2 is shown as the SRAF method of raising aperture layer edge pattern process window of the invention is shown
It is intended to, the present invention provides a kind of SRAF method for improving aperture layer edge pattern process window, and the method includes at least following step
It is rapid:
Step 1: providing edge pattern；Heretofore described edge pattern is the edge pattern of through-hole in aperture layer.It is described
The figure of through-hole is presented in aperture layer with the arrangement mode that domain requires, and the position of the edge pattern is in arranged through-hole figure
The marginal position of shape, that is to say, that close on at least side of the edge pattern without other layout patterns.
And in the present embodiment further, the shape of the edge pattern is square.That is, the edge pattern
Shape on domain is square.And in the present embodiment preferably, the edge pattern in step 1 is isolation pattern.Such as
Shown in Fig. 3, Fig. 3 is shown as the SRAF addition that edge pattern in the present invention is isolation pattern.With reference to Fig. 3, the edge pattern 01
Shape be square, that is to say, that close on the surrounding of the edge pattern without other layout patterns.
Step 2: the secondary graphics put in the top of the edge pattern, lower section addition level；Simultaneously in the edge graph
The secondary graphics of vertical display are added in the outside of shape；In the present embodiment, it is added above and below the isolation pattern horizontal
The secondary graphics put include the first secondary graphics and the second secondary graphics except first secondary graphics.Such as Fig. 3
Shown, the position above and below the edge pattern (isolation pattern 01) is separately added into secondary graphics, wherein closing on this
Secondary graphics above and below isolation pattern 01 are the first secondary graphics 001, in the top of first secondary graphics 001
With lower section be the second secondary graphics 002, that is to say, that second secondary graphics 002 be located at first secondary graphics 001 it
Outside.The secondary graphics for being separately added into vertical display in the present embodiment on the left side of the isolation pattern 01 and the right include the first auxiliary
Figure and the second secondary graphics except first secondary graphics.As shown in Figure 3, that is to say, that close on described isolated
The left side of figure and the right have been separately added into the first secondary graphics 001, described in 01 left side of isolation pattern and the right
The second secondary graphics 002 are separately added into except first secondary graphics 001, that is to say, that on 01 left side of isolation pattern and the right side
The outside of first secondary graphics 001 of side vertical display joined second secondary graphics 002 of vertical display.
Further, the shape of first secondary graphics and second secondary graphics is all bar shaped, and described
The length of one secondary graphics is less than the length of second secondary graphics.As shown in figure 3, in the present embodiment, in the isolated figure
First secondary graphics being separately added into above and below shape are put in level, which is bar shaped, therefore
Bar pattern the first secondary graphics of bar shaped 001 that level is put respectively above and below the isolation pattern and the isolated figure
Shape is equidistant, and the edge for being located at the first secondary graphics above and below the isolation pattern is mutually aligned.
It is assisted in the present embodiment in the bar shaped first that the left side of the isolation pattern 01 and the right are separately added into vertical display
Figure and the distance between the second secondary graphics of bar shaped except the first bar shaped secondary graphics and the isolation pattern phase
Deng, and the two edge, to it, the length of the first bar shaped secondary graphics of the vertical display is assisted less than the bar shaped second
The length of figure.
As seen from Figure 3, no matter the first secondary graphics of horizontal the first secondary graphics or vertical display put,
Length is less than the length of second secondary graphics.
Step 3: the oblique upper, obliquely downward on the outside of the edge pattern are separately added into secondary graphics.In the present embodiment
The edge pattern is that the secondary graphics that oblique upper, the obliquely downward of isolation pattern are separately added into include in the upper left of the isolation pattern
Side, lower left, upper right side and lower right be separately added into the shape be bar shaped third secondary graphics and be located at the third it is auxiliary
Help the second secondary graphics except figure, and the position of second, third secondary graphics put respectively with the isolated figure
Shape is in 45 degree.Further, the shape be the third secondary graphics of bar shaped length be less than the shape be the second of bar shaped
The length of secondary graphics.As shown in figure 3, the upper left of the isolation pattern 01 that shape is square, lower-left, upper right, bottom right
Third secondary graphics 003 have been separately added on four angles, joined the second secondary graphics except the third secondary graphics 003
002, that is to say, that surrounds the isolation pattern 01 has the first secondary graphics 001 and third secondary graphics 003, this is first auxiliary
It helps figure and third secondary graphics to constitute the first lap for surrounding the isolation pattern 01, and surrounds the second of most isolation patterns
Enclosing (in the periphery of the first lap) is made of second secondary graphics.
With reference to Fig. 4 d, Fig. 4 d is shown as the cutline result of SRAF addition when edge pattern of the invention is isolation pattern.
The contrast for increasing pattern during OPC forms target pattern and scattering strip usually on mask plate
(scattering bar, sbar) is exposing wherein the sbar is the surrounding's figure for generating optical approach effect to target pattern
It after light and is not formed on the wafer, the sbar for example selects various strips, box etc..With reference to Fig. 4 a to Fig. 4 c, Fig. 4 a
The cutline result of two sbar is added for isolation pattern；After Fig. 4 b is extends sbar length on the basis of sbar in fig.4
Cutline result；Fig. 4 c is to be added second set of SRAF's on the basis of sbar on four angles of isolation pattern in fig. 4b
Cutline result；It is rear, it is apparent that edge pattern by comparing the cutline of Fig. 4 a to Fig. 4 c and Fig. 4 d
Process window gets a promotion.
Further, the SRAF method of the raising aperture layer edge pattern process window of the invention is inserted for rule-based
Enter technology.
Embodiment two
As shown in Fig. 2, the process that Fig. 2 is shown as the SRAF method of raising aperture layer edge pattern process window of the invention is shown
It is intended to, the present invention provides a kind of SRAF method for improving aperture layer edge pattern process window, and the method includes at least following step
It is rapid:
Step 1: providing edge pattern；Heretofore described edge pattern is the edge pattern of through-hole in aperture layer.
The figure of through-hole is presented in the aperture layer with the arrangement mode that domain requires, and the position of the edge pattern is in institute
The marginal position of the via hole image of arrangement, that is to say, that close on at least side of the edge pattern without other layout patterns.
And in the present embodiment further, the shape of the edge pattern is square.That is, the edge pattern
Shape on domain is square.That is, shape of the edge pattern on domain is square.The edge graph
Shape is the edge pattern in the via hole image of one dimensional arrangement.
Step 2: the secondary graphics put in the top of the edge pattern, lower section addition level；Simultaneously in the edge graph
The secondary graphics of vertical display are added in the outside of shape；As shown in figure 5, Fig. 5 is shown as the via hole image of one dimensional arrangement of the invention
In edge pattern SRAF addition schematic diagram；That is, the edge pattern is in several transversely arranged via hole images
In marginal position.The present invention preferably, is separately added into the horizontal secondary graphics put above and below the edge pattern
Bar shaped secondary graphics including via hole image that is parallel and being projected on the one dimensional arrangement and it is located at the bar shaped secondary graphics
Except another bar shaped secondary graphics.That is, as shown in figure 5, above and below the one-dimensional via hole image respectively
The state that the bar shaped secondary graphics of addition presentation level is parallel to each other, two bar shaped secondary graphics and institute above and below this
It is in parallel for stating putting for the via hole image of one dimensional arrangement, and two bar shaped secondary graphics up and down are projected on the one-dimensional row
The via hole image of column, that is to say, that the head and the tail of two bar shaped secondary graphics and edge pattern in the one-dimensional via hole image
Outboard alignment.And it is additionally provided with above the bar shaped secondary graphics of the top of the via hole image of the one dimensional arrangement another
Secondary graphics, also are provided with another below the bar shaped secondary graphics of the lower section of the via hole image of the one dimensional arrangement
Secondary graphics.Therefore, with reference to Fig. 5, it is auxiliary that two bar shapeds are respectively provided with above and below the via hole image of the one dimensional arrangement
Help figure.The present invention further, as shown in figure 5, the edge pattern outside be added vertical display secondary graphics packet
Include the first secondary graphics and the second secondary graphics except first secondary graphics.And first, second auxiliary
The shape of figure is bar shaped, and the length of second secondary graphics is greater than the length for first secondary graphics that shape is bar shaped
Degree.
Step 3: the oblique upper, obliquely downward on the outside of the edge pattern are separately added into secondary graphics.Further,
In Fig. 5, in the secondary graphics that oblique upper, the obliquely downward of the edge pattern of the via hole image of the one dimensional arrangement are separately added into
Including the third secondary graphics that shape is bar shaped and the second secondary graphics except the third secondary graphics, and described the
Two, the position of third secondary graphics is put respectively with the edge pattern in 45 degree.As shown in Figure 5, the shape is the of bar shaped
The length of three secondary graphics is less than the length for the second secondary graphics that the shape is bar shaped.
With reference to Fig. 6 b and Fig. 6 b, wherein Fig. 6 a is shown as not using the through-hole of one dimensional arrangement before the SRAF addition invented
The cutline result of edge pattern in figure；Fig. 6 b is shown as edge pattern in the via hole image of one dimensional arrangement of the invention
The cutline result of SRAF addition.By the comparison of two width figures, it is apparent that the process window of edge pattern gets a promotion.
Further, the SRAF method of the raising aperture layer edge pattern process window of the invention is inserted for rule-based
Enter technology.
In conclusion the process window in the present invention at poroid graphic edge is smaller, present invention PW model fitting pair
Than different SRAF sizes and position, obtains reasonable SRAF addition, the contrast of edge hole pattern can be effectively improved, to the later period
OPC, which publishes figure, has directive significance, to improve the technique production quality of aperture layer.So the present invention effectively overcome it is existing
Various shortcoming in technology and have high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (15)
1. a kind of SRAF method for improving aperture layer edge pattern process window, which is characterized in that the method includes at least following
Step:
Step 1: providing edge pattern；
Step 2: the secondary graphics put in the top of the edge pattern, lower section addition level；Simultaneously in the edge pattern
The secondary graphics of outside addition vertical display；
Step 3: the oblique upper, obliquely downward on the outside of the edge pattern are separately added into secondary graphics.
2. the SRAF method according to claim 1 for improving aperture layer edge pattern process window, it is characterised in that: step 1
Described in edge pattern be aperture layer in through-hole edge pattern.
3. the SRAF method according to claim 2 for improving aperture layer edge pattern process window, it is characterised in that: the side
The shape of edge figure is square.
4. the SRAF method according to claim 3 for improving aperture layer edge pattern process window, it is characterised in that: step 1
In the edge pattern be isolation pattern.
5. the SRAF method according to claim 4 for improving aperture layer edge pattern process window, it is characterised in that: described
The secondary graphics that addition level is put above and below isolation pattern include the first secondary graphics and assist positioned at described first
The second secondary graphics except figure；The secondary graphics of vertical display are separately added on the left side of the isolation pattern and the right simultaneously
The second secondary graphics including the first secondary graphics and except first secondary graphics.
6. the SRAF method according to claim 5 for improving aperture layer edge pattern process window, it is characterised in that: described the
The shape of one secondary graphics and second secondary graphics is all bar shaped, and the length of first secondary graphics is less than described
The length of second secondary graphics.
7. the SRAF method according to claim 6 for improving aperture layer edge pattern process window, it is characterised in that: described
Edge pattern be the secondary graphics that are separately added into of oblique upper, obliquely downward of isolation pattern include the isolation pattern upper left side,
Lower left, upper right side and lower right are separately added into the third secondary graphics that the shape is bar shaped and are located at the third auxiliary figure
The second secondary graphics except shape, and the position of second, third secondary graphics puts and is in the isolation pattern respectively
45 degree.
8. the SRAF method according to claim 7 for improving aperture layer edge pattern process window, it is characterised in that: the shape
Shape is the length that the length of the third secondary graphics of bar shaped is less than the second secondary graphics that the shape is bar shaped.
9. the SRAF method according to claim 3 for improving aperture layer edge pattern process window, it is characterised in that: the side
Edge figure is the edge pattern in the via hole image of one dimensional arrangement.
10. the SRAF method according to claim 9 for improving aperture layer edge pattern process window, it is characterised in that: in institute
Stating and being separately added into the horizontal secondary graphics put above and below edge pattern includes in parallel and being projected on the one dimensional arrangement
Via hole image bar shaped secondary graphics and another bar shaped secondary graphics for being located at except the bar shaped secondary graphics.
11. the SRAF method according to claim 10 for improving aperture layer edge pattern process window, it is characterised in that: in institute
The outside for stating edge pattern is added the secondary graphics of vertical display including the first secondary graphics and is located at first secondary graphics
Except the second secondary graphics.
12. the SRAF method according to claim 11 for improving aperture layer edge pattern process window, it is characterised in that: described
The shape of first, second secondary graphics is bar shaped, and it is the described of bar shaped that the length of second secondary graphics, which is greater than shape,
The length of first secondary graphics.
13. the SRAF method according to claim 12 for improving aperture layer edge pattern process window, it is characterised in that: in institute
Stating the secondary graphics that oblique upper, the obliquely downward of the edge pattern of the via hole image of one dimensional arrangement are separately added into includes that shape is
The third secondary graphics of bar shaped and the second secondary graphics except the third secondary graphics, and described second, third is auxiliary
The position of figure is helped to put respectively with the edge pattern in 45 degree.
14. the SRAF method according to claim 13 for improving aperture layer edge pattern process window, it is characterised in that: described
Shape is the length that the length of the third secondary graphics of bar shaped is less than the second secondary graphics that the shape is bar shaped.
15. the SRAF method according to claim 1 for improving aperture layer edge pattern process window, it is characterised in that: described
Method is used for rule-based insertion technology.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104898367A (en) * | 2015-05-15 | 2015-09-09 | 上海集成电路研发中心有限公司 | Optical proximity correction method for improving through-hole process window |
| CN107065430A (en) * | 2017-03-10 | 2017-08-18 | 上海集成电路研发中心有限公司 | A kind of rule-based Sub-resolution assist features adding method |
| US20180341740A1 (en) * | 2017-05-24 | 2018-11-29 | Synopsys, Inc. | Rule Based Assist Feature Placement Using Skeletons |
-
2019
- 2019-06-19 CN CN201910529974.1A patent/CN110262184A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104898367A (en) * | 2015-05-15 | 2015-09-09 | 上海集成电路研发中心有限公司 | Optical proximity correction method for improving through-hole process window |
| CN107065430A (en) * | 2017-03-10 | 2017-08-18 | 上海集成电路研发中心有限公司 | A kind of rule-based Sub-resolution assist features adding method |
| US20180341740A1 (en) * | 2017-05-24 | 2018-11-29 | Synopsys, Inc. | Rule Based Assist Feature Placement Using Skeletons |
| CN108957944A (en) * | 2017-05-24 | 2018-12-07 | 辛奥普希斯股份有限公司 | It is placed using the rule-based supplemental characteristic of skeleton |
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Application publication date: 20190920 |